Ident. | Authors (with country if any) | Title |
---|
000041 |
| Amorphous indium tin oxide films deposited on flexible substrates by facing target sputtering at room temperature |
000096 |
| Surface roughness induced electron mobility degradation in InAs nanowires |
000108 |
| Solution-processed indium gallium zinc oxide thin-film transistors with infrared irradiation annealing |
000176 |
| MoO3-Au composite interfacial layer for high efficiency and air-stable organic solar cells |
000184 |
| Low-temperature solution-processed ZnO nanocrystalline interfacial layer with antireflective effect for efficient inverted polymer solar cells |
000193 |
| Investigation of copper indium gallium selenide material growth by selenization of metallic precursors |
000263 |
| Enhanced output power of (indium) gallium nitride light emitting diodes by a transparent current spreading-film composed of a disordered network of indium tin oxide nanorods |
000285 |
| Effect of annealing temperature on surface morphology and work function of ZnO nanorod arrays |
000308 |
| Compositionally undulating step-graded InAsyP1-y buffer layer growth by metal-organic chemical vapor deposition |
000313 |
| Chemical vapor phase polymerization deposition of layer-ordered conducting polymer nanostructure for hole injection layer |
000483 |
| Investigation on growth of In2S3 thin films by chemical bath deposition |
000518 |
| Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth |
000535 |
| Fabrication of Cu(In,Ga)Se2 thin films by ion beam sputtering deposition from a quaternary target at different substrate temperatures |
000553 |
| Electrodeposition of Platinum on Plastic Substrates as Counter Electrodes for Flexible Dye-Sensitized Solar Cells |
000573 |
| Effects of AlN interlayer on the transport properties of nearly lattice-matched InAIN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition |
000576 |
| Effect of growth temperature on surface morphology and structure of InAs/GaSb superlattices grown by metalorganic chemical vapor deposition |
000710 |
| Strain accumulation in InAs/InxGai1-xAs quantum dots |
000785 |
| MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers |
000808 |
| Influence of buffer layer thickness and epilayer's growth temperature on crystalline quality of InAs0.6P0.4/InP grown by LP-MOCVD |
000837 |
| High quality InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition |
000902 |
| Effects of Annealing on Structural and Electrical Properties of CulnSe2 Thin Films Prepared by Hybrid Sputtering/Evaporation Processes |
000909 |
| Effect of acetic acid on ZnO:In transparent conductive oxide prepared by ultrasonic spray pyrolysis |
000930 |
| Copper doped nickel oxide transparent p-type conductive thin films deposited by pulsed plasma deposition |
000956 |
| Air-annealing effects on SiO2/ITO coating |
000957 |
| Advanced light trapping materials: Double layer ZnO:B based transparent conductive oxide |
000A60 |
| Properties of Photoelectricity of WOx-doped ITO thin Films |
000B21 |
| Influence of annealing temperature on field emission from tetrapod-shaped ZnO-whisker films obtained by screen printing |
000B37 |
| High-performance ZnO thin film transistors with sputtering SiO2/Ta2O5/SiO2 multilayer gate dielectric |
000B41 |
| Growth of pattern-free InN micropyramids by metalorganic chemical vapor deposition |
000B96 |
| Effect of triethanolamine and sodium dodecyl sulfate on the formation of CuInSe2 thin films by electrodeposition |
000D15 |
| Surface morphology modelling for the resistivity analysis of low temperature sputtered indium tin oxide thin films on polymer substrates |
000D23 |
| Study on Charge Carrier Recombination Zone with Ultrathin Rubrene Layer as Probe |
000D24 |
| Study of the morphological change of amorphous ITO films after temperature-humidity treatment |
000D27 |
| Structure and optical properties of ZnO:V thin films with different doping concentrations |
000D55 |
| Prospective important semiconducting nanotubes: synthesis, properties and applications |
000E37 |
| ITO glass polishing using carbon dioxide snow jet technique for organic light-emitting diodes |
000E63 |
| Finite element analysis of conical, dome and truncated InAs quantum dots with consideration of surface effects |
000F62 |
| A study of two-step growth and properties of In0.82Ga0.18As on InP |
001009 |
| Temperature dependence of surface quantum dots grown under frequent growth interruption |
001052 |
| Properties of Au/Pt/Ti contact to p-InP by rapid thermal processing |
001083 |
| Nitrogen Incorporation Characteristics of 4H-SiC Epitaxial Layer |
001139 |
| Giant magnetoresistance in Fe/In multilayers and its anomalous temperature dependence |
001183 |
| Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111) |
001205 |
| Covalent integration of luminescent Eu (III) complex onto composite conductors or semiconducting substrates by grafting with organosilane |
001290 |
| Surface morphology of highly mismatched insb films grown on GaAs substrates by molecular beam epitaxy |
001293 |
| Study on ITO/Ag/ITO multilayer film as the electrode of organic light-emitting diodes |
001320 |
| Properties of DC magnetron sputtered indium-tin oxide films with the assistance of tiny H2O vapor at low temperature |
001440 |
| Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD |
001449 |
| Effect of K-doping on the dielectric and tunable properties of Ba0.6Sr0.4TiO3 thin films prepared by RF magnetron sputtering |
001522 |
| Temperature dependence of surface quantum dots grown under frequent growth interruption |
001539 |
| Study of nucleation positions of InAs islands on stripe-patterned GaAs (100) substrate |
001555 |
| Separated AlxIn1-xN quantum dots grown by plasma-reactive co-sputtering |
001558 |
| Refractive indices of textured indium tin oxide and zinc oxide thin films |
001595 |
| Low temperature step-graded InAlAs/GaAs metamorphic buffer layers grown by molecular beam epitaxy |
001655 |
| Effect of temperature on selenization process of metallic Cu-In alloy precursors |
001816 |
| Field-emission properties of diamond-like-carbon and nitrogen-doped diamond-like-carbon films prepared by electrochemical deposition |
001848 |
| Characteristics of oxide-free InGaAlAs layers grown by narrow stripe selective MOVPE |
001872 |
| Investigations on V-defects in quaternary AlInGaN epilayers |
001A12 |
| Femtosecond laser-induced crystallization in amorphous Sb-rich AgInSbTe films |