| Ident. | Authors (with country if any) | Title |
|---|
| 000831 |
| High-power 1.25 μm InAs QD VECSEL based on resonant periodic gain structure |
| 000E77 |
| Fabrication and Characterization of 1.3-μm InAs Quantum-Dot VCSELs and Monolithic VCSEL Arrays |
| 001363 |
| Long-wavelength VCSELs for optical networks and trace-gas monitoring |
| 001385 |
| High-power InGaAs VCSEL's single devices and 2-D arrays |
| 001871 |
| 1.55-μm InGaAs/InGaAlAs MQW vertical-cavity surface-emitting lasers with InGaAlAs/InP distributed Bragg reflectors |
| 001A49 |
| A high power InGaAs/GaAsP vertical-cavity surface-emitting laser and its temperature characteristics |
| 001B10 |
| Differential surface photovoltage spectroscopy characterization of a 1.3 μm InGaAlAs/InP vertical-cavity surface-emitting laser structure |
| 001C62 |
| Metallic wafer bonding for the fabrication of long-wavelength vertical-cavity surface-emitting lasers |
| 002243 |
| Room temperature continuous wave visible vertical cavity surface emitting laser |
| 002320 |
| Stability improvement of selective oxidation during the fabrication of InGaAs/GaAs vertical cavity surface emitting laser |
| 002452 |
| Long wavelength (1.3 μm) vertical-cavity surface-emitting lasers with a wafer-bonded mirror and an oxygen-implanted confinement region |
