| Ident. | Authors (with country if any) | Title |
|---|
| 000308 |
| Compositionally undulating step-graded InAsyP1-y buffer layer growth by metal-organic chemical vapor deposition |
| 000664 |
| Theoretical study on critical thicknesses of InGaN grown on (0 0 0 1) GaN |
| 000A68 |
| Photovoltaic Effects of InGaN/GaN Double Heterojunctions With p-GaN Nanorod Arrays |
| 000B11 |
| Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties |
| 000C23 |
| Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer |
| 000C82 |
| The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers |
| 000D34 |
| Strain effect in determining the geometric shape of self-assembled quantum dot |
| 000F34 |
| Critical lateral dimension for a nanoscale-patterned heterostructure using the finite element method |
| 001264 |
| The influence of internal electric fields on the transition energy of InGaN/GaN quantum well |
| 001484 |
| Anomalous photoluminescence of InAs quantum dots implanted by Mn ions |
| 001974 |
| Optimization of InGaAsP-InP tensile strained multiple quantum-well structures emitting at 1.34 μm |
| 001A34 |
| Crack-free InAlGaN quaternary alloy films grown on Si(1 1 1) substrate by metalorganic chemical vapor deposition |
| 001D36 |
| Strain relaxation of InP film directly grown on GaAs patterned compliant substrate |
| 001E49 |
| Effect of thermal annealing on high indium content InGaN/GaN single quantum well structures |
| 002038 |
| Strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures by x-ray diffraction and photoluminescence |
| 002047 |
| Two-step method to grow InAs epilayer on GaAs substrate using a new prelayer |
| 002072 |
| Relaxation mechanism of GaP/InGaAlP/GaAs heterostructure |
| 002125 |
| Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots |
| 002137 |
| Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy |
| 002195 |
| Transition of carrier distribution from a strained to relaxed state in InGaAs/GaAs quantum well |
| 002197 |
| Ga0.51In0.49P/InxGa1-xAs/GaAs lattice-matched and strained doped-channel field-effect transistors grown by gas source molecular beam epitaxy |
| 002221 |
| The effect of strain on the miscibility gap in Ga-In-Sb ternary alloy |
| 002346 |
| Triclinic deformation and anisotropic strain relaxation of an InAs film on a GaAs(0 0 1) substrate measured by a series of symmetric double crystal X-ray diffraction |
| 002580 |
| Chemisorption of group-III metals on the (111) surface of group-IV semiconductors: In/Ge(111) |
| 002671 |
| Photomodulated reflectance spectra of In0.2Ga0.8As/GaAs single quantum wells |
| 002680 |
| Investigation of the epitaxial growth of InxGa1-xAs on GaAs(001) and extension of two-dimensional-three-dimensional growth mode transition |
| 002738 |
| Absorption spectroscopy studies of strained InGaAs/GaAs single-quantum wells |
| 002808 |
| X-ray characterization of strain relaxation in InGaAs/GaAs strained-layer superlattices |
