Ident. | Authors (with country if any) | Title |
---|
000069 |
| Tilt generation and phase separation in metamorphic GaInP buffers grown on GaAs substrates by metal-organic chemical vapor deposition |
000242 |
| Growth of metamorphic InGaP layers on GaAs substrates |
000287 |
| Effect of O2 Flow Rate During Channel Layer Deposition on Negative Gate Bias Stress-Induced Vth Shift of a-IGZO TFTs |
000442 |
| Piezo-Phototronic Effect on Electroluminescence Properties of p-Type GaN Thin Films |
000541 |
| Experimental Investigation of Border Trap Generation in InGaAs nMOSFETs With Al2O3 Gate Dielectric Under PBTI Stress |
000664 |
| Theoretical study on critical thicknesses of InGaN grown on (0 0 0 1) GaN |
000F44 |
| Calculation of phase diagrams in AlxIn1-xAs/InP, AsxSb1-xAl/InP and AIxIn1-xSb/InSb nano-film systems |
000F62 |
| A study of two-step growth and properties of In0.82Ga0.18As on InP |
001463 |
| Crystal-originated particles in germanium-doped Czochralski silicon crystal |
001569 |
| Piezomodulated reflectance study of self-assembled InAs quantum dots-in-a-well |
001610 |
| Improved quality of InGaN/GaN multiple quantum wells by a strain relief layer |
001687 |
| Anomalous temperature dependence of photoluminescence peak energy in InAs/InAlAs/InP quantum dots |
001726 |
| Surface morphology of GaInP buffer layers and its impact on the lateral distribution of self-organized InP islands |
001987 |
| MOVPE growth of grade-strained bulk InGaAs/InP for broad-band optoelectronic device applications |
001C66 |
| Strain-induced semimetal-semiconductor transition in InAs/GaSb broken-gap quantum wells |
001D48 |
| Optical properties of nanocrystalline Ga1-xInxSb/SiO2 films |
002001 |
| Influence of InxGa1-xAs (0≤x≤0.3) Cap Layer on Structural and Optical Properties of Self-assembled InAs/GaAs Quantum Dots |
002041 |
| Coherent Acoustic Phonon Oscillations in Semiconductor Multiple Quantum Wells with Piezoelectric Fields |