Ident. | Authors (with country if any) | Title |
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000208 |
| Influence of In doping on the structure, stability and electrical conduction behavior of Ba(Ce,Ti)O3 solid solution |
000731 |
| Pyroelectric performances of relaxor-based ferroelectric single crystals and related infrared detectors : Advances in Electronic Materials and Devices in the Far East |
000A37 |
| Structural and physical properties evolution of BaIr1-xMnxO3 solid solutions synthesized by high-pressure sintering |
000D29 |
| Structural defects-mediated room-temperature ferromagnetism in Co-doped SnO2 insulating films |
000F67 |
| A new kind of peripheral carbazole substituted ruthenium(II) complexes for electrochemical deposition organic light-emitting diodes |
001B98 |
| Growth temperature effect on the optical and material properties of AlxInxGa1-x-yN epilayers grown by MOCVD |
001C18 |
| Effects of TMIn flow rate of barrier layer on the optical and structural properties of InxGa1-xN/InyGa1-yN multiple quantum wells |
001C30 |
| Cyclotron resonance of polarons in ternary mixed crystals |
001D42 |
| Quasi-thermodynamic analysis of MOVPE growth of GaxAlyIn1-x-yN |
001D69 |
| Growth behavior and crystal structures of different phases in MnxCd1-xIn2Te4 grown by Bridgman method |
001F01 |
| Studies on incorporation of As2 and As4 in III-V compound semiconductors with two group V elements grown by molecular beam epitaxy |
001F02 |
| Structural anisotropy and optical properties of InxGa1-xAs quantum dots on GaAs(001) |
001F45 |
| Growth of Bi3-2xCa2xFe5-x-yInyVxO12 crystals by top seed solution growth (TSSG) technique |
001F81 |
| A mild solvothermal route to chalcopyrite quaternary semiconductor CuIn(SexS1-x)2 nanocrystallites |
002106 |
| Experimental and numerical investigations on dissolution and recrystallization processes of GaSb/InSb/GaSb under microgravity and terrestrial conditions |
002125 |
| Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots |
002215 |
| Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(3 1 1)B surfaces |
002216 |
| Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(3 1 1)B surfaces |
002248 |
| Preparation and gas-sensing properties of NANO-CdIn2O4 material |
002295 |
| Raman scattering of InAs1-x-ySbxPy quaternary alloys |
002408 |
| Growth and characterization of InAs-rich GaInAsSb alloys on GaSb substrates by MOCVD |
002510 |
| Growth of high-quality relaxed In0.3Ga0.7As/GaAs superlattices |
002583 |
| Volume behavior of α-phase solution of In-Pb-Sn ternary system |
002709 |
| Metalorganic chemical vapor deposition of GaxIn1-xSb ternary alloys |
002718 |
| Growth of GaxIn1-xAs1-ySby alloys by metalorganic chemical vapor deposition |
002725 |
| Decrease of dislocations in GaAs by isoelectronic doping of liquid phase epitaxial layers |
002728 |
| Characterization of InxGa1-xAs/InP epilayers by X-ray double crystal rocking curve peak profile analysis |
002795 |
| Influence of the substitution of Y by In on the structure and magnetic property of Y2Cu2O5 |
002820 |
| Structure of InxGa1-xAs/GaAs strained-layer superlattices |