| Ident. | Authors (with country if any) | Title |
|---|
| 001916 |
| Electroreflectance study on the polarization field in InGaN/AlInGaN multiple quantum wells |
| 001A55 |
| Electronic properties of GaAs/GayIn1-yNxAs1-y-xSby superlattices |
| 001A71 |
| Multiple negative differential resistance of InP/InGaAs superlattice-emitter resonant-tunneling bipolar transistor at room temperature |
| 001A87 |
| AlGaInP Light Emitting Diode with a Modulation-Doped Superlattice |
| 001A90 |
| Surface band-bending effects on the optical properties of indium gallium nitride multiple quantum wells |
| 001A94 |
| Observation of self-organized superlattice in AlGaInAsSb pentanary alloys |
| 001D08 |
| Low-Voltage-Operation High-Power-Density AlGaAs/InGaAs Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistor for Personal Handy-Phone Handset Application |
| 001E17 |
| Comparison of InAs/GaAs Quantum Dot Infrared Photodetector and GaAs/(AlGa)As Superlattice Infrared Photodetector |
| 001E48 |
| Investigation of indium tin oxide/zinc oxide multilayer ohmic contacts to n-type GaN isotype conjunction |
| 001F97 |
| X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices |
| 002010 |
| Mechanism of luminescence in InGaN/GaN multiple quantum wells |
| 002043 |
| Abnormal temperature dependence of band-gap energies observed in (InAs)/(GaAs) and (InP)/(GaP) superlattices with strong lateral composition modulation |
| 002149 |
| GaInAsSb/InP heterojunction band offset: Measurement by absorption spectroscopy |
| 002181 |
| Observation of the impulse-like negative-differential resistance of superlatticed resonant-tunneling transistor |
| 002182 |
| Superlatticed negative differential-resistance heterojunction bipolar transistor |
| 002207 |
| Reduction of spontaneous surface segregation in (InP)2/(GaP)2 quantum wells grown on tilted substrates |
| 002293 |
| The reduction and enhancement of spontaneous ordering in (InP)2/(GaP)2 quantum wells grown by solid source molecular beam epitaxy |
| 002332 |
| Optical modes within III-nitride multiple quantum well microdisk cavities |
| 002439 |
| Temperature dependence of photoluminescence spectra in InAs/GaAs quantum dot superlattices with large thicknesses |
| 002455 |
| Optical and structural characterization of InAs/GaSb superlattices |
| 002461 |
| Self-formed InGaAs/GaAs quantum dot superlattice and direct observation on strain distribution in the capped superlattice |
| 002605 |
| Normal incident infrared absorption from InGaAs/GaAs quantum dot superlattice |
| 002613 |
| Improved performance of InAlAs-InGaAs-InP MSM photodetectors with graded superlattice structure grown by gas source MBE |
