| Ident. | Authors (with country if any) | Title |
|---|
| 000F47 |
| Bright and color-saturated quantum dot light-emitting diodes, new star for next generation displays and solid state lighting |
| 001346 |
| Near infrared light-emitting diodes based on composites of near infrared dye, CdSe/CdS quantum dots and polymer |
| 001891 |
| Growth of InGaN self-assembled quantum dots and their application to photodiodes |
| 001917 |
| Ultra-High-Density InGaN Quantum Dots Grown by Metalorganic Chemical Vapor Deposition |
| 001A58 |
| Enhancement of room-temperature photoluminescence in InAs quantum dots |
| 001A61 |
| Magnetic properties of parabolic quantum dots in the presence of the spin-orbit interaction |
| 001A70 |
| Silicon Doping Induced Increment of Quantum Dot Density |
| 001A84 |
| Transport characteristics of InAs/GaAs quantum-dot infrared photodetectors |
| 001A89 |
| Effect of InGaAs capping layer on the properties of InAs/InGaAs quantum dots and lasers |
| 001A93 |
| Temperature dependence of photoreflectance in InAs/GaAs quantum dots |
| 001A97 |
| Enhanced spontaneous emission from InAs/GaAs self-organized quantum dots in a GaAs photonic-crystal-based microcavity |
| 001A99 |
| Characteristics of a field-effect transistor with stacked InAs quantum dots |
| 001B06 |
| In0.6Ga0.4As/GaAs quantum-dot infrared photodetector with operating temperature up to 260 K |
| 001B09 |
| Tunneling through InAs quantum dots in AlGaAs/GaAs double barrier resonant tunneling diodes with InGaAs quantum well emitters |
| 001B13 |
| Mode splitting in photoluminescence spectra of a quantum-dot-embedded microcavity |
| 001C55 |
| Hole emission processes in InAs/GaAs self-assembled quantum dots |
| 001C70 |
| Polaron model in self-assembled InAs/GaAs quantum dots- A perturbative approach |
| 001C80 |
| Integral and fractional charge filling in a InAs/GaAs quantum dot p-i-n diode by capacitance-voltage measurement |
| 001C92 |
| Quasiregular quantum-dot-like structure formation with postgrowth thermal annealing of InGaN/GaN quantum wells |
| 001C93 |
| Few-electron filling effect in laterally coupled spherical InAs/GaAs quantum-dot system |
| 001C94 |
| Scanning electron filling modulation reflectance of charged InGaAs self-assembled quantum dot |
| 001D07 |
| InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular-beam epitaxy |
| 001D09 |
| Selective growth of single InAs quantum dots using strain engineering |
| 001E15 |
| InAs/GaAs single-electron quantum dot qubit |
| 001E17 |
| Comparison of InAs/GaAs Quantum Dot Infrared Photodetector and GaAs/(AlGa)As Superlattice Infrared Photodetector |
| 001E30 |
| Charging of embedded InAs self-assembled quantum dots by space-charge techniques |
| 001E38 |
| Thermal redistribution of photocarriers between bimodal quantum dots |
| 001E42 |
| Random telegraph noise in the photoluminescence of individual GaxIn1-xAs quantum dots in GaAs |
| 001E53 |
| High-performance InAs/GaAs quantum-dot infrared photodetectors with a single-sided Al0.3Ga0.7As blocking layer |
| 001E55 |
| Near-room-temperature operation of an InAs/GaAs quantum-dot infrared photodetector |
| 001E60 |
| Quantum-confined Stark shift in electroreflectance of InAs/InxGa1-xAs self-assembled quantum dots |
| 001F88 |
| Electron distribution and level occupation in an ensemble of InxGa1-xAs/GaAs self-assembled quantum dots |
| 001F92 |
| Carrier distribution and relaxation-induced defects of InAs/GaAs quantum dots |
| 001F97 |
| X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices |
| 002000 |
| Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots |
| 002001 |
| Influence of InxGa1-xAs (0≤x≤0.3) Cap Layer on Structural and Optical Properties of Self-assembled InAs/GaAs Quantum Dots |
| 002009 |
| Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells |
| 002012 |
| Magneto-Photoluminescence Study of InGaAs/GaAs Quantum Wells and Quantum Dots Grown on (111)B GaAs Substrate |
| 002013 |
| Tuning of conduction intersublevel absorption wavelengths in (In,Ga)As/GaAs quantum-dot nanostructures |
| 002025 |
| Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures |
| 002035 |
| Experimental determination of local Strain effect on InAs/GaAs self-organized quantum dots |
| 002037 |
| Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing |
| 002161 |
| Strain effect on the band structure of InAs/GaAs quantum dots |
| 002178 |
| Electron-filling modulation reflectance in charged self-assembled InxGa1-xAs quantum dots |
| 002205 |
| Structure and photoluminescence of InGaAs self-assembled quantum dots grown on InP(001) |
| 002208 |
| Photoluminescence study of high-quality InGaAs/GaAs quantum dots on (111)B GaAs substrates |
| 002298 |
| Photoconductivity in self-organized InAs quantum dots |
| 002306 |
| InGaAs/GaAs quantum dots on (111)B GaAs substrates |
| 002325 |
| Ordered InAs quantum dots in InAlAs matrix on (001) InP substrates grown by molecular beam epitaxy |
| 002334 |
| Self-organized InAs/GaAs quantum dots grown by gas source molecular beam epitaxy |
| 002439 |
| Temperature dependence of photoluminescence spectra in InAs/GaAs quantum dot superlattices with large thicknesses |
| 002440 |
| Synthesis, structure, and optical properties of nanometer-sized In2O3 capped by anionic surfactant |
| 002454 |
| Intraband optical absorption in semiconductor coupled quantum dots |
| 002461 |
| Self-formed InGaAs/GaAs quantum dot superlattice and direct observation on strain distribution in the capped superlattice |
| 002605 |
| Normal incident infrared absorption from InGaAs/GaAs quantum dot superlattice |
