Ident. | Authors (with country if any) | Title |
---|
000125 |
| Pulsed laser deposition and characterization of epitaxial CuInS2 thin films on c-plane sapphire substrates |
000740 |
| Preparation and properties of Ni/InGaN/GaN Schottky barrier photovoltaic cells |
000785 |
| MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers |
000B41 |
| Growth of pattern-free InN micropyramids by metalorganic chemical vapor deposition |
001006 |
| The characterization and properties of InN grown by MOCVD |
001300 |
| Structural characterization of InN films grown on different buffer layers by metalorganic chemical vapor deposition |
001392 |
| Growth and characterization of In doped Cd0.8Mn0.2Te single crystal |
001609 |
| InGaP/GaAs heterojunction bipolar transistor grown by solid-source molecular beam epitaxy with a GaP decomposition source |
001790 |
| Influence of the low temperature buffer layer on InP epitaxial growth on GaAs substrates |
001814 |
| Growth and characterization of InGaN blue LED structure on Si(111) by MOCVD |
002062 |
| Study of AlGaAsSb/InGaAsSb strained quantum well grown by molecular beam epitaxy on GaSb(100) |
002728 |
| Characterization of InxGa1-xAs/InP epilayers by X-ray double crystal rocking curve peak profile analysis |
002880 |
| Effect of graded layer on the X-ray double-crystal diffraction rocking curve |
002932 |
| Double-crystal X-ray rocking-curve peak splitting due to interference in triple-layer epitaxic structures |