| Ident. | Authors (with country if any) | Title |
|---|
| 000463 |
| Morphology and shape dependent characteristics of InAs/InP(100) quantum dot laser grown by gas source molecular beam epitaxy |
| 000B26 |
| InAs/GaAs quantum dot lasers grown by gas-source molecular-beam epitaxy |
| 001358 |
| Metamorphic growth of 1.25-1.29 μm InGaAs quantum well lasers on GaAs by molecular beam epitaxy |
| 001523 |
| Temperature dependence of interband transition energy in InGaAsN strain-compensated quantum-well and ridge-waveguide lasers fabricated with pulsed anodic oxidation |
| 001F27 |
| MBE grown 2.0 μm InGaAsSb/AlGaAsSb MQW ridge waveguide laser diodes |
| 002271 |
| High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by metal-organic chemical vapor deposition |
