| Ident. | Authors (with country if any) | Title |
|---|
| 000073 |
| Theoretical analysis of the inter-diffusion coefficients in the AlGaInP material quantum well intermixing |
| 000425 |
| Selective etching characteristics of the AgInSbTe phase-change film in laser thermal lithography |
| 000759 |
| Optothermal tuning of liquid crystal infiltrated InGaAsP photonic crystal nanocavities |
| 000768 |
| Optical bistability in GaInAsP/InP coupled-circular resonator microlasers |
| 000814 |
| InGaAsP photonic crystal slot nanobeam waveguides for refractive index sensing |
| 000901 |
| Effects of Cu/In ratio of electrodeposited precursor on post-sulfurization process in fabricating quaternary CuIn(S,Se)2 thin films |
| 000A58 |
| Quantum dot multi-wavelength comb lasers with Si ring resonator |
| 000B15 |
| Intracavity Second Harmonic Generation Characteristics of Semiconductor Disk Laser |
| 000C32 |
| An InP based wide gain spectrum asymmetric quantum wells for large scale optoelectronic monolithic integration |
| 000C78 |
| Theoretical study of ultrafast index dynamics in semiconductor optical amplifiers |
| 000C79 |
| Theoretical study of InGaAsP-InP active microring |
| 000D22 |
| Study on Polarization Dependency of InAs Quantum Dot Coupled InGaAsP Quantum Well SOA |
| 000D42 |
| Simulation of a 1550 nm InGaAsP-InP transistor laser |
| 000D44 |
| Room temperature continuous-wave electrically-injected InGaAsP triangle and square microlasers |
| 000D88 |
| Optical bistability in InP/GaInAsP equilateral- triangle-resonator microlasers |
| 000F65 |
| A ridge width varied two-section index-coupled DFB self-pulsation laser with a wide continuously tunable frequency range |
| 001038 |
| Single Dipole Mode Photonic Crystal Laser on InGaAsP/InP QW Waveguide Slab |
| 001040 |
| Simulation of multimode interference couplers with deep rib structure and tunable power splitting ratio |
| 001043 |
| Self-pulsation in a two-section DFB laser with a varied ridge width |
| 001093 |
| Mode behavior in triangle and square microcavities |
| 001191 |
| Directional emission InP/GaInAsP square-resonator microlasers |
| 001198 |
| Design and Fabrication of 2×2 InP/InGaAsP Optical Switch |
| 001238 |
| A novel butt-joint scheme for the preparation of electro-absorptive lasers |
| 001245 |
| 40 Gb/s InGaAlAs EML Module Based on Identical Epitaxial Layer Integration Scheme |
| 001254 |
| Ultrafast all-optical polarization switching based on "virtual excitation" of InGaAs(P) MQWs |
| 001355 |
| Modification of the organic/La0.7Sr0.3MnO3 interface by in situ gas treatment |
| 001400 |
| Fabrication of InGaAlAs MQW buried heterostructure lasers by narrow stripe selective MOVPE |
| 001405 |
| Equilateral-triangle-resonator injection lasers with directional emission |
| 001456 |
| Design and performance of monolithic integrated electro-absorption modulated distributed feedback laser |
| 001458 |
| Design and Fabrication of High-Performance InGaAsP/InP Electroabsorption Modulator |
| 001495 |
| 1.3 μm gain coupled DFB laser with InGaAlAs MQW grown on absorptive InGaAsP corrugation |
| 001518 |
| The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 μm wavelength GaInNAs/GaAs quantum well with high indium content |
| 001537 |
| Surface and optical properties of AlGaInP films grown on GaAs by metalorganic chemical vapor deposition |
| 001577 |
| Optimization of active region for 1.3-μm GaInAsP compressive-strain multiple-quantum-well ridge waveguide laser diodes |
| 001589 |
| Narrow stripe selective growth of InGaAlAs waveguides used for buried heterostructure lasers |
| 001591 |
| Monolithic integration of electroabsorption modulator and DFB laser for 10-Gb/s transmission |
| 001614 |
| High-quality multiple quantum wells selectively grown with tapered masks by ultra-low-pressure MOCVD |
| 001633 |
| Experimental study of NRZ format wavelength conversion using electroabsorption modulator |
| 001664 |
| Dipole mode photonic crystal point defect laser on InGaAsP/InP |
| 001672 |
| Crystal structures of alkali-metal indium (III) phosphates of [M3In(PO4)2]N (M = K, n = 10; M = Rb, n = 2) compounds, and band structures and chemical bond properties of [Rb3In(PO4)2]2 crystal |
| 001693 |
| A 1.5 μm n-type InGaAsP/InGaAsP modulation-doped multiple quantum well DFB laser by MOCVD |
| 001794 |
| Influence of Si3N4 and ZnS films on transmittance of InAsSb/InAsPSb heterostructures |
| 001810 |
| Heat management of MBE-grown antimonide lasers |
| 001817 |
| Femtosecond laser pulse irradiation of Sb-rich AgInSbTe films: Scanning electron microscopy and atomic force microscopy investigations |
| 001871 |
| 1.55-μm InGaAs/InGaAlAs MQW vertical-cavity surface-emitting lasers with InGaAlAs/InP distributed Bragg reflectors |
| 001943 |
| Study on the effects of well number on temperature characteristics in 1.3-μm InGaAsP-InP quantum-well lasers |
| 001951 |
| Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows |
| 001974 |
| Optimization of InGaAsP-InP tensile strained multiple quantum-well structures emitting at 1.34 μm |
| 001979 |
| Nonlinearity in power-current characteristics of narrow-pulse-driven AlGaInP laser diodes |
| 001996 |
| Indium mole fraction effect on the structural and optical properties of quaternary AlInGaN epilayers |
| 001A12 |
| Femtosecond laser-induced crystallization in amorphous Sb-rich AgInSbTe films |
| 001A34 |
| Crack-free InAlGaN quaternary alloy films grown on Si(1 1 1) substrate by metalorganic chemical vapor deposition |
| 001A37 |
| Characterization of InAs quantum dots on lattice-matched InAlGaAs/InP superlattice structures |
| 001A50 |
| 1310 nm AlGaInAs-InP polarization insensitive multiple quantum well optical amplifier |
| 001B39 |
| Study on the surface of AlGaInP |
| 001B69 |
| Optical gain of InGaAsSb/AlGaAsSb type-I long wavelength quantum-well lasers |
| 001B84 |
| Localized exciton dynamics in AlInGaN alloy |
| 001B92 |
| Improved performance of 1.3 μm InGaAsP-InP lasers with an AlInAs electron stopper layer |
| 001C03 |
| GalnNAs: Growth and characterization |
| 001C25 |
| Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs |
| 001C45 |
| Accurate interband-energy measurements from Ellipsometric spectra |
| 001C48 |
| A simple model for optimization design of high performance In1-x-yGayAlxAs strained MQW DFB lasers |
| 001D20 |
| The low-frequency electrical noise as reliability estimation for high power semiconductor lasers |
| 001D99 |
| Analysis of the Al content in semiconductor materials by null ellipsometric spectrometry |
| 001E82 |
| The vertical beam quality of GaInP/AlGaInP strained multiple quantum well laser |
| 001E87 |
| Temperature and injection current dependencies of 2 μm InGaAsSb/AlGaAsSb multiple quantum-well ridge-waveguide lasers |
| 001F09 |
| Quasi RT-CW operation of InGaAs/InGaAsP strained quantum well lasers |
| 001F20 |
| Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures |
| 001F33 |
| InGaAs/InGaAsP microdisk lasers grown by GSMBE |
| 001F62 |
| Design of the active structure of high-performance 1.55-μm In1-x-yGayAlxAs strained MQW lasers |
| 001F63 |
| Demonstrations for optical beam qualities of quantum well lasers |
| 001F64 |
| Damage profiles and damage annealing behavior in Al0.168Ga0.348In0.484P/GaAs implanted with 200 keV Zn+ ions |
| 001F66 |
| Characteristics of strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE |
| 001F68 |
| Band-structure and optical gain for InAsp/In(GaAs)P MQW laser structures |
| 001F69 |
| Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers |
| 001F72 |
| Analysis of semiconductor microlasers with an equilateral triangle resonator by rate equations |
| 001F74 |
| An effective way to detect the secondary phase in Sr-doped LaInO3 |
| 002062 |
| Study of AlGaAsSb/InGaAsSb strained quantum well grown by molecular beam epitaxy on GaSb(100) |
| 002094 |
| InGaAsP/GaAs SCH SQW laser arrays grown by LPE |
| 002100 |
| High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers |
| 002138 |
| Anisotropic radiation pattern from InGaAlP quantum well mesa-like microdisks |
| 002224 |
| The analysis of the performance for P-p-n and N-n-p hetero- and homojunction GaSb/Ga0.8In0.2As0.19Sb0.81 photodetectors |
| 002243 |
| Room temperature continuous wave visible vertical cavity surface emitting laser |
| 002271 |
| High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by metal-organic chemical vapor deposition |
| 002348 |
| Thermal properties of high-power InGaAsP/InP stripe-geometry laser diode : calculation and analyses |
| 002350 |
| The study of single mode 650nm AlGaInP quantum well laser diodes for DVD |
| 002358 |
| Single-lobe operation of BA InGaAsP/GaAs SCH SQW lasers |
| 002376 |
| Operating characteristics of InGaAsP/GaAs SCH SQW high power lasers by LPE |
| 002381 |
| Microcavity effect and InGaAs/InGaAsP MQW microdisk laser |
| 002384 |
| Liquid-phase epitaxial growth of InAsPSb/InAs heterostructure |
| 002386 |
| Linewidth in microdisk laser |
| 002397 |
| High-power BA Al-free InGaAsP/GaAs SCH SQW lasers |
| 002398 |
| High temperature operation of 650nm AlGaInP quantum well laser diodes grown by LP-MOCVD |
| 002400 |
| High performance 1.55μm InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method |
| 002408 |
| Growth and characterization of InAs-rich GaInAsSb alloys on GaSb substrates by MOCVD |
| 002425 |
| Analysis of the R0A product and detectivity in a GaInAsSb infrared photovoltaic detector |
| 002427 |
| Analysis and optimization of 1.55 μm InGaAs/InGaAsP strained multiple quantum well lasers |
| 002433 |
| 808nm Al-free InGaAsP/GaAs SCH SQW lasers fabricated by LPE |
| 002435 |
| 1.3μm InGaAsP/InP strained layer multi-quantum-well complex-coupled distributed feedback laser |
| 002480 |
| The electronic structure of AlyGaxIn1-x-yAs alloys and related heterojunctions |
| 002501 |
| MBE growth and characterization of high-quality GaInAsSb/AlGaAsSb strained multiple quantum well structures |
| 002505 |
| Isotropic growth islands of Ga0.16In0.84As0.80Sb0.20 epilayer grown by metalorganic chemical vapour deposition |
| 002533 |
| Analysis of coupling effect on valence band structures of strained multiple quantum wells |
| 002602 |
| Optical properties of quaternary GaInAsSb/AlGaAsSb strained quantum wells |
| 002611 |
| Investigation of strain-compensated InGaAs(P)/InGaAs(P)/InP multiple quantum well structures grown by LP-MOVPE |
| 002618 |
| Exciton line broadening and intersubband absorption in quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells |
| 002689 |
| Liquid-phase epitaxial growth and characterization of InGaAsP layers grown on GaAsP substrates for application to orange light-emitting diodes |
| 002700 |
| Scaling characteristics of AC magnetic susceptibility in the high-temperature superconductors with granular structure |
| 002716 |
| Growth of GaInAsSb alloys by metalorganic chemical vapor deposition |
| 002718 |
| Growth of GaxIn1-xAs1-ySby alloys by metalorganic chemical vapor deposition |
| 002720 |
| Femtosecond modulated reflectance investigation of In0.5Ga0.5P and In0.5Ga0.5P0.99As0.01 lattice-matched to GaAs (100) substrate |
| 002724 |
| Effect of V/III ratio on the electrical and optical properties of Si-doped AlGaInP grown by metalorganic chemical vapor deposition |
| 002775 |
| Comparing reactive ion etching of III-V compounds in Cl2/BCl3/Ar and CCl2F2/BCl3/Ar discharges |
| 002791 |
| Observation of laser oscillation without population inversion in InGaAsP microdisk lasers |
| 002795 |
| Influence of the substitution of Y by In on the structure and magnetic property of Y2Cu2O5 |
| 002812 |
| Twin formation due to irradiation of energetic electron beam in high-temperature superconductors in In- and Sb-doped YBCO |
| 002813 |
| Transmission coefficient in symmetrical double-well potential structures |
| 002826 |
| Optical properties and chemical durability of lead-indium-aluminum phosphate glass |
| 002837 |
| Determination of wavelength dependence of the reflectivity at AR coated diode facets |
| 002860 |
| Oxygen in InxGa1-xAsyP1-y Grown on GaAs |
