| Ident. | Authors (with country if any) | Title |
|---|
| 000030 |
| Fabricating highly efficient Cu(In,Ga)Se2 solar cells at low glass-substrate temperature by active gallium grading control |
| 000140 |
| Preferred orientation of Cu(In,Ga)Se2 thin film deposited on stainless steel substrate |
| 000148 |
| Photoluminescence study of the defect-induced recombination in Cu(In,Ga)Se2 solar cell |
| 000188 |
| Large energy band-gap tuning of 980 nm InGaAs/InGaAsP quantum well structure via quantum well intermixing |
| 000280 |
| Effect of sulfurization in hydrogen sulfide on the properties of Cu(In,Ga)Se2 thin-film absorbers |
| 000342 |
| A mixed-conducting BaPr0.8In0.2O3-δ cathode for proton-conducting solid oxide fuel cells |
| 000348 |
| 13.6%-efficient Cu(In,Ga)Se2 solar cell with absorber fabricated by RF sputtering of (In,Ga)2Se3 and CuSe targets |
| 000403 |
| Structural, optical and electrical properties of low-temperature deposition Cu(InxGa1-x)Se2 thin films |
| 000519 |
| Growth of Zn doped Cu(In,Ga)Se2 thin films by RF sputtering for solar cell applications |
| 000535 |
| Fabrication of Cu(In,Ga)Se2 thin films by ion beam sputtering deposition from a quaternary target at different substrate temperatures |
| 000579 |
| Effect of Si, In and Ge doping on high ionic conductivity of Li7La3Zr2O12 |
| 000588 |
| Determining factor of MoSe2 formation in Cu(In,Ga)Se2 solar Cells |
| 000859 |
| Fabrication of Cu(In, Ga)Se2 thin films by sputtering from a single quaternary chalcogenide target |
| 000863 |
| Extrinsic Base Surface Passivation in Terahertz GaAsSb/InP DHBTs Using InGaAsP Ledge Structures |
| 000B02 |
| Light-splitting photovoltaic system utilizing two dual-junction solar cells |
| 000B59 |
| Experimental and simulation analysis of the dye sensitized solar cell/Cu(In,Ga)Se2 solar cell tandem structure |
| 000F31 |
| Cyclic voltammetry study of electrodeposition of Cu(In,Ga)Se2 thin films |
| 001022 |
| Superluminescent Diode Monolithically Integrated with Novel Y-Branch by Bundle Integrated Waveguide for Fiber Optic Gyroscope |
| 001689 |
| Analysis and optimization of an InGaAsP/InP waveguide variable optical attenuator |
| 001698 |
| Visible light sensitive photocatalysts In1-xMxTaO4 (M = 3d transition-metal) and their activity controlling factors |
| 001704 |
| Theoretical analysis of the bandgap for the intermixed Gainp/AlgaInP quantum wells |
| 001758 |
| Polarization dependent characteristics of a resonant cavity enhanced photodetector |
| 001798 |
| InGaAs/InGaAsP microavity laser with directional output waveguide |
| 001806 |
| High-volume production of 650nm GaInP/AlGaInP laser diodes |
| 001835 |
| Dual wavelength 650-780nm laser diodes |
| 001850 |
| Calculation of valence subband structures for strained GaInP/AlGaInP quantum wells without axial approximation |
| 001945 |
| Study of the long-wavelength optic phonons in AlGaInP and AlGaInAs |
| 001988 |
| MOVPE growth and fabrication of 1.3 μm high power InGaAsP-InP polarization-insensitive superluminescent diodes with complex strained quantum wells |
| 001A06 |
| High power polarization-insensitive 1.3 μm InGaAsP-InP quantum-well superluminescent emission diodes grown by MOVPE |
| 001A14 |
| Fabrication and complete characterization of polarization insensitive 1310 nm InGaAsP-InP quantum-well semiconductor optical amplifiers |
| 001A31 |
| Design of a resonant-cavity-enhanced GaInAsSb/GaSb photodetector |
| 001A41 |
| Calculation of the R0A product in n+-n-p and p+-p-n GaAnAsSb infrared detectors |
| 001B22 |
| Wavelength sensing by dual photodetectors |
| 001B30 |
| The effects of (NH4)2S passivation treatments on the dark current-voltage characteristics of InGaAsSb PIN detectors |
| 001B44 |
| Structure change near the magnetic-transition temperature in the perovskite compound Ba(In0.5Sb0.5)03 |
| 001C42 |
| Analysis of the detectivity for triple-layer heterojunction GaSb/GaInAsSb infrared detectors |
| 001C53 |
| 1.55 μm AlGaInAs/InP polarization-insensitive optical amplifier with tensile strained wells grown by MOCVD |
| 001F13 |
| Photonic-sensitive InAlGaAs/InP negative-differential-resistance heterojunction bipolar transistor |
| 001F25 |
| Mid-infrared GaInAsSb photodetector grown by solid source molecular beam epitaxy |
| 002087 |
| Native oxided AlAs current blocking layer for AlGaInP high brightness light emitting diodes |
| 002147 |
| 1.3 μm integrated superluminescent light source |
| 002395 |
| Hydrothermal synthesis and characterization of perovskite-type Ba2SbMO6 (M = In, Y, Nd) oxides |
| 002401 |
| High brightness AlGaInP Orange light emitting diodes |
| 002418 |
| Coupled AlxGa1-xAs-AlAs distributed Bragg reflectors for high brightness AlGaInP light emitting diodes |
| 002419 |
| Coprecipitating synthesis and impedance study of CaZr1-xInxO3-δ |
| 002434 |
| 1.55 μm InGaAsP/InP partially gain-coupled distributed feedback laser / electroabsorption modulator integrated device for trunk line communication |
| 002509 |
| Hydrothermal synthesis and characterization of BaZr1-xMxO3-α (M = Al, Ga, In, x < 0.20) series oxides |
| 002698 |
| Small signal circuit model of single-mode laser diode for simulation of nonlinear distortion |
| 002707 |
| Molecular beam epitaxial growth, characterization and performance of high-detectivity GaInAsSb/GaSb PIN detectors operating at 2.0 to 2.6 μm |
| 002719 |
| GaInAsSb/GaSb infrared photodetectors prepared by MOCVD |
| 002777 |
| b and its temperature dependence are the important criteria of the reliability of semiconductor lasers |
| 002785 |
| Study of pulse compression from 1.5 μm distributed feedback lasers by a Gires-Tournois interferometer |
| 002798 |
| High temperature and low threshold current operation of strained AlGaInP/Ga0.4In0.6P multi-quantum well laser diodes emitting at 676nm |
| 002805 |
| An improved approach and experimental results of a low-frequency noise measurement technique used for reliability estimation of diode lasers |
