| Ident. | Authors (with country if any) | Title |
|---|
| 000059 |
| Two dimensional electron gas mobility limited by scattering of quantum dots with indium composition transition region in quantum wells |
| 000073 |
| Theoretical analysis of the inter-diffusion coefficients in the AlGaInP material quantum well intermixing |
| 000119 |
| Resolving exciton diffusion in InGaAs quantum wells using micro-photoluminescence mapping with a lateral excitation |
| 000242 |
| Growth of metamorphic InGaP layers on GaAs substrates |
| 000358 |
| Two-colour mid-infrared absorption in InAs/GaSb type II and broken-gap quantum wells under gated electric field |
| 000446 |
| Phonon and electron-hole plasma effects on binding energies of excitons in wurtzite GaN/InxGa1-xN quantum wells |
| 000520 |
| Growth and characterization of InGaN nanodots hybrid with InGaN/GaN quantum wells |
| 000530 |
| Finite barrier width effects on exciton states and optical properties in wurtzite InGaN/GaN quantum well |
| 000619 |
| Anomalous spin-orbit coupling in high-density two-dimensional electron gas confined in InGaAs/InAlAs quantum well |
| 000650 |
| Voltage-controlled spin precession in InAs quantum wells |
| 000744 |
| Polaronic Effect on the Electron Energy Spectrum in a Wurtzite InxGa1-xN/GaN Quantum Well |
| 000823 |
| Improvement of structural and luminescence properties in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers |
| 000A69 |
| Photoluminescence investigation of InAs quantum dots in quantum well with different strain reducing layer |
| 000A80 |
| Optical bistability in InP/InAlGaAs multi-quantum-well semiconductor ring lasers |
| 000A94 |
| Magneto-optical absorption by InAs/GaSb-based type II and broken-gap quantum well |
| 000B06 |
| Large blue shift of the absorption edge in modified potential InGaAs/InAIAs coupled quantum wells |
| 000B17 |
| Integration of GaAs /In0.1Ga0.9As/AlAs resonance tunneling heterostructures into micro-electro-mechanical systems for sensor applications |
| 000B42 |
| Gate-controlled electron-electron interactions in an In0.53Ga0.47As/InP quantum well structure |
| 000B86 |
| Electro-optical effects in strain-compensated InGaAs/InAlAs coupled quantum wells with modified potential |
| 000C32 |
| An InP based wide gain spectrum asymmetric quantum wells for large scale optoelectronic monolithic integration |
| 000C87 |
| The effects of indium segregation on the valence band structure and optical gain of GaInAs/GaAs quantum wells |
| 000D22 |
| Study on Polarization Dependency of InAs Quantum Dot Coupled InGaAsP Quantum Well SOA |
| 000D33 |
| Strain effect on polarized optical properties of c-plane GaN and m-plane GaN |
| 000D82 |
| PHOTOLUMINESCENCE FROM RARE EARTH IONS DOPED NANOCRYSTALS |
| 000D84 |
| Optimization of AlInGaAs/InGaAs/InAs strain compensated triangular quantum wells grown by gas source molecular beam epitaxy for laser applications in 2.1-2.4 μm range |
| 000E40 |
| Highly efficient four-wave mixing via intersubband transitions in InGaAs/AlAs coupled double quantum well structures |
| 000E52 |
| Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method |
| 000F18 |
| Diode-pumped passively mode-locked Nd:LuVO4 laser with LT-In0.25Ga0.75As saturable absorber |
| 000F24 |
| Design and epitaxy of structural III-nitrides |
| 000F48 |
| Band Engineering in Strained GaN/ultrathin InN/GaN Quantum Wells |
| 000F89 |
| Two-colour infrared absorption in InAs/GaSb-based type II and broken-gap quantum well systems |
| 001010 |
| Temperature dependence of PL spectrum in researching InGaAs/GaAs single quantum well |
| 001079 |
| Optical properties of InAs/In0.15Ga0.85As quantum dots-in-a-well studied by piezomodulated reflectance spectroscopy |
| 001134 |
| High Power 1064nm Laser Diode Array and Measuring Chip Temperature Based on Emitting Spectra |
| 001150 |
| Exciton states in wurtzite InGaN/GaN quantum wells : Strong built-in electric field and interface optical-phonon effects |
| 001160 |
| Electronic subband structure of InAs/GaSb-based type II and broken-gap quantum well systems |
| 001192 |
| Direct observation of coherent spin transfer processes in an InGaAs/GaAs quantum well via two-color time-resolved Kerr rotation measurements |
| 001235 |
| A strained InGaAs/InAlAs coupled quantum well with polarization-independent large positive electro-refractive index change |
| 001250 |
| Weak antilocalization and beating pattern in an InGaAs/InAlAs quantum well |
| 001256 |
| Two-colour mid-infrared absorption in an InAs/GaSb-based type II and broken-gap quantum well |
| 001291 |
| Sub-terahertz photoconduction induced by interlayer transition in an InAs/GaSb-based type II and broken-gap quantum well system |
| 001304 |
| Spin-orbit splitting-dependent quadratic electro-optic effect in InGaN/GaN quantum wells |
| 001315 |
| Rapid photoluminescence quenching in GaInNAs quantum wells at low temperature |
| 001318 |
| Pseudospin in Si δ-doped InAlAs/InGaAs/InAlAs single quantum well |
| 001329 |
| Photoluminescence study of AlGaInP/GaInP quantum well intermixing induced by zinc impurity diffusion |
| 001359 |
| Metamorphic InGaAs quantum wells for light emission at 1.3-1.6 μm |
| 001458 |
| Design and Fabrication of High-Performance InGaAsP/InP Electroabsorption Modulator |
| 001476 |
| Cathodoluminescence study of InGaN/GaN quantum-well LED structures grown on a Si substrate |
| 001479 |
| Buffer influence on AlSb/InAs/AlSb quantum wells |
| 001513 |
| Theoretical study of improved two-dimensional electron gas density in AlGaN/GaN/AlGaN double heterostructure |
| 001569 |
| Piezomodulated reflectance study of self-assembled InAs quantum dots-in-a-well |
| 001615 |
| High-performance EML grown on taper-masked pattern substrates by ultra-low-pressure MOCVD |
| 001634 |
| Exciton states of vertically stacked self-assembled InAs quantum disks in an axial magnetic field |
| 001642 |
| Electronic structure of InSb quantum ellipsoids in an external magnetic field |
| 001645 |
| Electron g factors and optical properties of InAs quantum ellipsoids |
| 001701 |
| Time-dependent transport properties in quantum well with thin inserted layer |
| 001749 |
| Quantum and transport scattering times in modulation-doped AlxGa1-xN/GaN single quantum wells |
| 001760 |
| Piezoelectric field-dependent optical nonlinearities induced by interband transition in InGaN/GaN quantum well |
| 001766 |
| Parameter-dependent resonant third-order susceptibility contributed by inter-band transitions in InxGa1-xN/GaN quantum wells |
| 001767 |
| Origin of the blueshift in the infrared absorbance of intersubband transitions in AlxGa1-x N/GaN multiple quantum wells |
| 001770 |
| Optical properties of digital-alloy In0.49(Ga1-zAlz)0.51P/GaAs and InGaP/In0.49(Ga1-zAlz)0.51P multi-quantum wells grown by molecular-beam epitaxy |
| 001776 |
| Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 μm (InyGa1-yAs/GaAs1-xSbx)/GaAs bilayer quantum wells |
| 001822 |
| Electronic structure of self-assembled InAs quantum discs in a magnetic field with varying orientation and two-electron quantum-disc qubits |
| 001880 |
| Anisotropic Metal-Insulator Transition in Epitaxial Thin Films |
| 001928 |
| The influence of Si-doping to the characteristics of AlGaInP/GaInP multiple quantum wells |
| 001965 |
| Propagating optical-phonon modes and their electron-phonon interactions in wurtzite GaN/AlxGa1-xN quantum wells |
| 001A16 |
| Experimental studies of lattice dynamical properties in indium nitride |
| 001A23 |
| Effects of indium doping on the properties of AlAs/GaAs quantum wells and inverted AlGaAs/GaAs two-dimensional electron gas |
| 001A30 |
| Determination of the effective refractive index spectrum of a quantum-well semiconductor laser diode from the measured modal gain spectrum |
| 001A50 |
| 1310 nm AlGaInAs-InP polarization insensitive multiple quantum well optical amplifier |
| 001B52 |
| Rashba-effect-induced spin dephasing in n-type InAs quantum wells |
| 001B68 |
| Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells |
| 001C03 |
| GalnNAs: Growth and characterization |
| 001D13 |
| Tuning of exciton-photon coupling in a planar semiconductor microcavity by applying hydrostatic pressure |
| 001D22 |
| The effects of concomitant In and N incorporation on the photoluminescence of GaInNAs |
| 001D65 |
| Impact of polarization on quasi-two-dimensional exciton and barrier-width dependence of the exciton associated transition in wurtzite III-V nitride quantum wells |
| 001D87 |
| Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry |
| 001F10 |
| Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy |
| 001F20 |
| Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures |
| 001F47 |
| Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy |
| 001F50 |
| Experimental investigation of photoluminescence dynamics of cavity polaritons under nonresonant excitation |
| 002059 |
| Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers |
| 002062 |
| Study of AlGaAsSb/InGaAsSb strained quantum well grown by molecular beam epitaxy on GaSb(100) |
| 002094 |
| InGaAsP/GaAs SCH SQW laser arrays grown by LPE |
| 002121 |
| Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes |
| 002138 |
| Anisotropic radiation pattern from InGaAlP quantum well mesa-like microdisks |
| 002211 |
| Wavelength tuning in GaAs/AlGaAs quantum wells by InAs submonolayer insertion |
| 002241 |
| Self-organization of the InGaAs/GaAs quantum dots superlattice |
| 002251 |
| Photovoltaic spectroscopy studies of strained InGaAs/GaAs quantum wells |
| 002350 |
| The study of single mode 650nm AlGaInP quantum well laser diodes for DVD |
| 002365 |
| Photoluminescence study of InGaAs/InAlAs single and multiple quantum wells |
| 002366 |
| Photoluminescence study of InxGa1-xAs/InyAl1-yAs one-side-modulation-doped asymmetric step quantum wells |
| 002368 |
| Photoluminescence from InAs quantum dots on GaAs(100) |
| 002369 |
| Photoexcited carrier diffusion dependence of differential reflection dynamics in InAsxP1-x/InP (x ≤ 0.35) strained-multiple-quantum wells |
| 002374 |
| Optical anisotropy of InAs submonolayer quantum wells in a (311)GaAs matrix |
| 002376 |
| Operating characteristics of InGaAsP/GaAs SCH SQW high power lasers by LPE |
| 002388 |
| Investigation of 980nm GaInAs/GaAs/GaInP QW high power lasers |
| 002398 |
| High temperature operation of 650nm AlGaInP quantum well laser diodes grown by LP-MOCVD |
| 002433 |
| 808nm Al-free InGaAsP/GaAs SCH SQW lasers fabricated by LPE |
| 002574 |
| Observation of double cyclotron resonance in modulation-δ-doped In0.52Al0.48As/In0.53Ga0.47As heterostructure by optical detection |
| 002581 |
| Photoluminescence studies of InAs/InGaAs/AlAs strained single quantum well structures |
| 002602 |
| Optical properties of quaternary GaInAsSb/AlGaAsSb strained quantum wells |
| 002604 |
| Observation of excitonic polaritons in quaternary GaInAsSb/AlGaAsSb multiple quantum wells |
| 002607 |
| Monte Carlo simulation of exciton states in spatially separated electron-hole system |
| 002609 |
| Iron-doped semi-insulating InP grown by chloride VPE with nitrogen mixed with hydrogen as carrier gas |
| 002617 |
| GSMBE growth and PL investigation of lattice-matched InGaAs/InP quantum wells |
| 002618 |
| Exciton line broadening and intersubband absorption in quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells |
| 002629 |
| Optical investigation of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells |
| 002632 |
| Photoluminescence of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells |
| 002633 |
| Critical layer thickness in metal organic chemical vapor deposition grown InGaAs/GaAs strained quantum wells |
| 002634 |
| Strong blueshift of the excitonic transition in the InGaAs/InP/InAsP antisymmetric coupled quantum wells |
| 002636 |
| Nonlinear polarization switching in a semiconductor single quantum well optical amplifier |
| 002642 |
| Strong Stark effect of the intersubband transitions in the three coupled quantum wells: Application to voltage-tunable midinfrared photodetectors |
| 002648 |
| Observation of quantum confined Stark effect in InxGa1-xAs/GaAs single-quantum well by photoreflectance spectroscopy |
| 002651 |
| Observation of excitonic polariton and broadening of room-temperature exciton in strained InGaAs/GaAs quantum wells |
| 002659 |
| Study on symmetry forbidden transitions in an InxGa1-xAs/GaAs single quantum well by temperature dependence |
| 002663 |
| Characteristics of a δ -doped GaAs/InGaAs p-channel heterostructure field-effect transistor |
| 002666 |
| Study of InAlAs/InGaAs heterojunction bipolar transistor layers by optically detected cyclotron resonance |
| 002668 |
| Spectroscopic studies of the effects of two-dimensional electron gas on interband transitions |
| 002670 |
| Luminescence of low-temperature GaAs in a GaAs/In0.2Ga0.8As multiple quantum well structure |
| 002671 |
| Photomodulated reflectance spectra of In0.2Ga0.8As/GaAs single quantum wells |
| 002672 |
| Very large Stark shift in three-coupled-quantum wells and their application to tunable far-infrared photodetectors |
| 002673 |
| Performance enhancement in a metal-insulator-semiconductor-like pseudomorphic transistor by utilizing an n--GaAs/n+-In0.2Ga0.8As two-layer structure |
| 002674 |
| Characteristics of a GaAs-InGaAs quantum-well resonant-tunneling switch |
| 002679 |
| Characteristics of δ -doped InGaAs/GaAs pseudomorphic double-quantum-well high electron mobility transistors |
| 002685 |
| Second subband population in δ-doped Al0.48In0.52As/Ga0.47In0.53As heterostructures |
| 002690 |
| Electric-field dependence of optical absorption properties in coupled quantum wells and their application to 1.3 μm optical modulator |
| 002696 |
| Subpicosecond dynamics spectra in InGaAs/GaAs strained-layer and strained quantum well |
| 002701 |
| Room-temperature excitons in strained InGaAs/GaAs quantum wells |
| 002703 |
| Photomodulated transmission spectroscopy of InxGa1-xAs/GaAs MQWs under hydrostatic pressure |
| 002704 |
| Photoluminescence studies of modulation-doped In0.60Ga0.40As/In0.52Al0.48As strained multiple quantum wells |
| 002721 |
| Exciton line broadening in strained InGaAs/GaAs single quantum wells |
| 002726 |
| Critical layer thickness in MOCVD grown InGaAs-GaAs strained quantum wells |
| 002733 |
| A resonant Raman study on phonons in GaInAs/AlInAs multiple quantum wells |
| 002737 |
| Tunneling current due to incident electrons derived from the valence bands in AlSb-InAs-AlSb double-barrier structures |
| 002738 |
| Absorption spectroscopy studies of strained InGaAs/GaAs single-quantum wells |
| 002742 |
| Proposal of interband tunneling structures with strained layers |
| 002747 |
| Enhancement of the Stark effect in AlInAs/GaInAs coupled quantum wells and their application to tunable midinfrared photodetectors |
| 002748 |
| Observation of a negative persistent photoconductivity effect in In0.25Ga0.75Sb/InAs quantum wells |
| 002749 |
| Electronic properties of AlxGa1-xSb/InAs quantum wells |
| 002752 |
| Influence of cap layer thickness on optical quality in In0.2Ga0.8As/GaAs single quantum wells |
| 002754 |
| Triply resonant enhancement of third-order nonlinear optical susceptibility in compositionally asymmetric coupled quantum wells |
| 002756 |
| Negative persistent photoeffect on cyclotron resonance in InAs/Al0.5Ga0.5Sb quantum wells |
| 002762 |
| Mobility enhancement in double δ-doped GaAs/InxGa1-xAs/GaAs pseudomorphic structures by grading the heterointerfaces |
| 002763 |
| GaAs-InGaAs quantum-well resonant-tunneling switching device grown by molecular beam epitaxy |
| 002767 |
| Photoreflectance characterization of an InAlAs/InGaAs heterostructure bipolar transistor |
| 002769 |
| Strong accumulation of As precipitates in low temperature InGaAs quantum wells grown by molecular beam epitaxy |
| 002782 |
| The Fermi-edge singularity in CdTe/Cd1-xMnxTe:In multiple quantum wells |
| 002787 |
| Pressure dependence of photoluminescence in InxGa1-xAs/AlyGai1-yAs strained quantum wells with different widths |
| 002789 |
| Optical studies of strained InGaAs/GaAs single quantum wells |
| 002791 |
| Observation of laser oscillation without population inversion in InGaAsP microdisk lasers |
| 002801 |
| Effective interaction of electrons in quantum wells |
