| Ident. | Authors (with country if any) | Title |
|---|
| 000008 |
| Surface state and optical property of sulfur passivated InP |
| 000016 |
| Novel aminoalkyl-functionalized blue-, green- and red-emitting polyfluorenes |
| 000020 |
| Interface layer control and optimization of InAs/GaSb type-II superlattices grown by molecular beam epitaxy |
| 000030 |
| Fabricating highly efficient Cu(In,Ga)Se2 solar cells at low glass-substrate temperature by active gallium grading control |
| 000062 |
| Tuning emission property of CdS nanowires via indium doping |
| 000069 |
| Tilt generation and phase separation in metamorphic GaInP buffers grown on GaAs substrates by metal-organic chemical vapor deposition |
| 000075 |
| The investigation of GaInP solar cell grown by all-solid MBE |
| 000089 |
| Synthesis and relative optical properties of Eu3+/Tb3+-activated Li3InB2O6 |
| 000101 |
| Study of Ultraviolet Emission Enhancement in AlxInyGa1-x-yN Quaternary Alloy Film |
| 000104 |
| Structural and optical properties of the Cu2ZnSnSe4 thin films grown by nano-ink coating and selenization : Solar Energy Generation and Energy Storage |
| 000113 |
| Single InAs Quantum Dot Grown at the Junction of Branched Gold-Free GaAs Nanowire |
| 000119 |
| Resolving exciton diffusion in InGaAs quantum wells using micro-photoluminescence mapping with a lateral excitation |
| 000123 |
| Radiative recombination of carriers in the GaxIn1-xP/GaAs double-junction tandem solar cells |
| 000148 |
| Photoluminescence study of the defect-induced recombination in Cu(In,Ga)Se2 solar cell |
| 000149 |
| Photoluminescence properties of porous InP filled with ferroelectric polymers |
| 000160 |
| Optical properties of InN films grown by pressurized-reactor metalorganic vapor phase epitaxy |
| 000161 |
| Optical and structural studies of dual wavelength InGaN/GaN tunnel-injection light emitting diodes grown by metalorganic chemical vapor deposition |
| 000168 |
| Near-infrared luminescence enhancing by co-doping Bi3+ in YVO4:Nd3+ |
| 000177 |
| Microwave assisted co-precipitation synthesis and photoluminescence characterization of spherical Sr2P2O7:Ce3+, Tb3+ phosphors |
| 000182 |
| Magnetron sputtered transparent conductive zinc-oxide stabilized amorphous indium oxide thin films on polyethylene terephthalate substrates at ambient temperature |
| 000187 |
| Less contribution of nonradiative recombination in ZnO nails compared with rods |
| 000218 |
| In(OH)3 and In2O3 nanorice and microflowers: morphology transformation and optical properties |
| 000225 |
| Improved Quantum Efficiency in Semipolar (1101) InGaN/GaN Quantum Wells Grown on GaN Prepared by Lateral Epitaxial Overgrowth |
| 000227 |
| Impact of double-cap procedure on the characteristics of InAs/InGaAsP/ InP quantum dots grown by metal-organic chemical vapor deposition |
| 000242 |
| Growth of metamorphic InGaP layers on GaAs substrates |
| 000243 |
| Growth of InAs quantum dots on Si-based GaAs nanowires by controlling the surface adatom diffusion |
| 000245 |
| Green-white-yellow tunable luminescence from Dy3+-Tb3+-Eu3+ doped transparent glass ceramics containing GdSr2F7 nanocrystals |
| 000255 |
| Facile synthesis of ZnS-CdIn2S4-alloyed nanocrystals with tunable band gap and its photocatalytic activity |
| 000264 |
| Enhanced Ce3+ photoluminescence by Li+ co-doping in CaO phosphor and its use in blue-pumped white LEDs |
| 000274 |
| Effects of growth temperature and buffer scheme on characteristics of InP-based metamorphic InGaAs photodetectors |
| 000289 |
| Effect of Eu doping concentration on the morphologies and optical properties of ZnO film prepared by ultrasonic spray pyrolysis |
| 000306 |
| Construction of Functional Macromolecules with Well-Defined Structures by Indium-Catalyzed Three-Component Polycoupling of Alkynes, Aldehydes, and Amines |
| 000324 |
| Analysis of Nonradiative Carrier Recombination Processes in InN Films by Mid-infrared Spectroscopy |
| 000336 |
| A novel dimesitylboron-substituted indolo[3,2-b]carbazole derivative: Synthesis, electrochemical, photoluminescent and electroluminescent properties |
| 000345 |
| A Chiral Tetrahedral Framework with Tetrahedral Guests for Catalysis and Photoluminescence |
| 000349 |
| (110)-Oriented ZIF-8 Thin Films on ITO with Controllable Thickness |
| 000351 |
| Wurtzite to zincblende transition of InN films on (011) SrTiO3 by decreasing trimethylindium flows |
| 000363 |
| Three-Dimensional Pillared-Layer 3d-4f Heterometallic Coordination Polymers With or Without Halides |
| 000364 |
| Three novel indium MOFs derived from dicarboxylate ligands: Syntheses, structures and photoluminescent properties |
| 000367 |
| The saturation density property of (B)InAs/GaAs quantum dots grown by metal-organic chemical vapor deposition |
| 000370 |
| The field emission of indium-doped ZnO films fabricated by room temperature DC magnetron sputtering |
| 000377 |
| Temperature-dependent photoluminescence of CuInS2 quantum dots |
| 000379 |
| Temperature dependent empirical pseudopotential theory for self-assembled quantum dots |
| 000392 |
| Synthesis and memory performance of a conjugated polymer with an integrated fluorene, carbazole and oxadiazole backbone |
| 000394 |
| Synthesis and Characterization of Electrophosphorescent Jacketed Conjugated Polymers |
| 000395 |
| Syntheses, structure and properties of three-dimensional pillared-layer Ag(I)-Ln(III) heterometallic coordination polymers based on mixed isonicotinate and hemimellitate ligands |
| 000406 |
| Spectroscopic characteristics of 1.54 μm emission in Er/Yb:LiNbO3 crystals tridoped with In3+ ions |
| 000411 |
| Sn-doped polyhedral In2O3 particles: Synthesis, characterization, and origins of luminous emission in wide visible range |
| 000423 |
| Self-Assembled InGaAs Quantum Dot Clusters with Controlled Spatial and Spectral Properties |
| 000432 |
| Push-Pull Archetype of Reduced Graphene Oxide Functionalized with Polyfluorene for Nonvolatile Rewritable Memory |
| 000444 |
| Photoluminescence characterization of a novel red-emitting phosphor In2(MoO4)3:Eu3+ for white light emitting diodes |
| 000485 |
| Interfacial Charge Carrier Dynamics of the Three-Component In2O3-TiO2-Pt Heterojunction System |
| 000518 |
| Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth |
| 000525 |
| Formation Mechanism and Optical Properties of InAs Quantum Dots on the Surface of GaAs Nanowires |
| 000531 |
| Ferromagnetism induced by oxygen-vacancy complex in (Mn, in) codoped ZnO |
| 000540 |
| Experimental Studies on Blinking Behavior of Single InP/ZnS Quantum Dots: Effects of Synthetic Conditions and UV Irradiation |
| 000543 |
| Enhancement of light-emission efficiency of ultraviolet InGaN/GaN multiple quantum well light emitting diode with InGaN underlying layer |
| 000551 |
| Electrodeposition of high aspect ratio LaPO4 and LaPO4:Ln3+ (Ln3+ = Ce3+, Tb3+) nanostructures |
| 000560 |
| Electrical, spectral and optical performance of yellow-green and amber micro-pixelated InGaN light-emitting diodes |
| 000567 |
| Effects of p-type doping on the optical properties of InAs/GaAs quantum dots |
| 000598 |
| Controlled synthesis of luminescent CuInS2 nanocrystals and their optical properties |
| 000631 |
| Ag/ZnO flower heterostructures as a visible-light driven photocatalyst via surface plasmon resonance |
| 000679 |
| The effect of PCBM doping on the electroluminescent performance of organic light-emitting diodes |
| 000700 |
| Syntheses, Characterization, and Properties of Three-Dimensional Pillared Frameworks with Entanglement |
| 000708 |
| Structural and optical properties of Ga2O3:In films deposited on MgO (1 0 0) substrates by MOCVD |
| 000710 |
| Strain accumulation in InAs/InxGai1-xAs quantum dots |
| 000711 |
| Strain accumulation in InAs/InxGa1-xAs quantum dots |
| 000718 |
| Shallow-Deep InGaN Multiple-Quantum-Well System for Dual-Wavelength Emission Grown on Semipolar (1122) Facet GaN |
| 000720 |
| Self-assembled InAs/GaAs quantum dot molecules with InxGa1- xAs strain-reducing layer |
| 000722 |
| Room temperature magnetic properties of ZnO nanostructured films |
| 000729 |
| Raman scattering and Rutherford backscattering studies on InN films grown by plasma-assisted molecular beam epitaxy |
| 000746 |
| Pluronic P123 assisted synthesis of hollow InSn/In2O3 hybrid nanoparticles by solution dispersion |
| 000764 |
| Optical spectroscopy of lanthanides doped in wide band-gap semiconductor nanocrystals |
| 000765 |
| Optical spectroscopy of lanthanides doped in wide band-gap semiconductor nanocrystals |
| 000773 |
| Novel pulsed electron deposition route to ZnO nanowire arrays |
| 000784 |
| Material Properties of MOCVD Grown AlGaN Layers Influenced by Indium-Incorporation |
| 000785 |
| MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers |
| 000797 |
| Large-scale fabrication of CdS nanorod arrays on transparent conductive substrates from aqueous solutions |
| 000806 |
| Influence of the TEGa flow on the optical and structural properties of InGaN/GaN multiple quantum wells grown by MOCVD |
| 000808 |
| Influence of buffer layer thickness and epilayer's growth temperature on crystalline quality of InAs0.6P0.4/InP grown by LP-MOCVD |
| 000810 |
| Influence of Alkali Metal Cation (Li(I), Na(I), K(I)) on the Construction of Chiral and Achiral Heterometallic Coordination Polymers |
| 000814 |
| InGaAsP photonic crystal slot nanobeam waveguides for refractive index sensing |
| 000823 |
| Improvement of structural and luminescence properties in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers |
| 000829 |
| Highly Transparent and Conductive Zn0.86Cd0.11In0.03O Thin Film Prepared by Pulsed Laser Deposition |
| 000844 |
| Growth and optical properties of tetrapod-like indium-doped ZnO nanorods with a layer-structured surface |
| 000847 |
| Gold nanoparticles modified ZnO nanorods with improved photocatalytic activity |
| 000849 |
| Gallium-doped indium oxide nanoleaves: Structural characterization, growth mechanism and optical properties |
| 000865 |
| Exciton states and optical transitions in InGaN/GaN quantum dot nanowire heterostructures: Strong built-in electric field and dielectric mismatch effects |
| 000866 |
| Epitaxial Growth of High Quality Nonpolar InN Films on LiGaO2 Substrates |
| 000868 |
| Enhanced optical properties of InAs/GaAs quantum dots grown by radio-frequency hydrogen plasma-assisted molecular beam epitaxy |
| 000870 |
| Enhanced electrocatalytic activity of a polyoxometalates-based film decorated by gold nanoparticles |
| 000873 |
| Electroplex emission at PVK/Bphen interface for application in white organic light-emitting diodes |
| 000879 |
| Electrodeposition and characterization of CaF2 and rare earth doped CaF2 films |
| 000885 |
| Electrochemically-tuned luminescence of a [Ru(bpy)2(tatp)]2+-sensitized TiO2 anode and its applications to photo-stimulated guanine/H2O2 fuel cells |
| 000887 |
| Electrochemical fabrication and potential-enhanced luminescence of [Ru(bpy)2tatp]2+ incorporating DNA-stabilized single-wall carbon nanotubes on an indium tin oxide electrode |
| 000906 |
| Effect of built-in electric field in photovoltaic InAs quantum dot embedded GaAs solar cell |
| 000908 |
| Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy |
| 000935 |
| Comparison between two types of photonic-crystal cavities for single-photon emitters |
| 000950 |
| An electrochemiluminescence sensor for determination of durabolin based on CdTe QD films by layer-by-layer self-assembly |
| 000953 |
| An Efficient Electroluminescence Copolymer Based on Vinyl-Linked Donor-Acceptor System |
| 000981 |
| Uniform In2S3 octahedron-built microspheres: Bioinspired synthesis and optical properties |
| 000995 |
| The influence of indium surfactant on the electrical properties of GaN epilayers grown by metal-organic chemical vapour deposition |
| 000A05 |
| Temperature dependent photoluminescence of an In(Ga)As/GaAs quantum dot system with different areal density |
| 000A06 |
| Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well |
| 000A10 |
| Synthesis, crystal structure, photo- and electro-luminescence of 3-(4-(anthracen-10-yl)phenyl)-7-(N,N'-diethylamino)coumarin |
| 000A12 |
| Synthesis, Crystal Structure, and Photoluminescence of a Series of Zinc(II) Coordination Polymers with 1,4-Di(1H imidazol-4-yl)benzene and Varied Carboxylate Ligands |
| 000A14 |
| Synthesis of indium tin oxide nanotubes using 2-methoxyethanol as solvent via simple template method |
| 000A18 |
| Synthesis and optical properties of N-In codoped ZnO nanobelts |
| 000A21 |
| Synthesis and Properties of Partially Conjugated Hyperbranched Light-Emitting Polymers |
| 000A22 |
| Synthesis and Characterization of Green to Orange Electroluminescent Copolymers Derived from Fluorene and 2,3-Dimethylnaphthalopyrazine |
| 000A41 |
| Solution-processed white organic light-emitting diode based on a single-emitting small molecule |
| 000A51 |
| SELF-ASSEMBLING OF INAS QUANTUM DOTS ON GAAS(001) IN MOLECULAR BEAM EPITAXY |
| 000A52 |
| Room temperature Er3+ 1.54 μm electroluminescence from Si-rich erbium silicate deposited by magnetron sputtering |
| 000A55 |
| Recent advances and challenges for successfu p-type control of InN films with Mg acceptor doping by molecular beam epitaxy |
| 000A69 |
| Photoluminescence investigation of InAs quantum dots in quantum well with different strain reducing layer |
| 000A73 |
| Photo/electroluminescence properties of an europium (III) complex doped in 4,4'-N, N'-dicarbazole-biphenyl matrix |
| 000A74 |
| Performance study of InAs/GaAs quantum dot covered by graded InxGa1-xAs layer |
| 000A79 |
| Optical property analysis of CZT:In single crystals after annealing by a two-step method |
| 000A86 |
| New promising phosphors Ba3InB9O18 activated by Eu3+/Tb3+ |
| 000B16 |
| Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density |
| 000B18 |
| Infrared luminescence of Tm3+-doped chalcohalide glasses in GeS2-In2S3-CsBr system |
| 000B24 |
| InN layers grown by MOCVD on SrTi03 substrates |
| 000B33 |
| Hydrogen effects on crystallinity, photoluminescence, and magnetization of indium tin oxide thin films sputter-deposited on glass substrate without heat treatment |
| 000B38 |
| High Brightness GaN Light Emitting Diodes with Different Barrier Widths in Quantum Wells for General Lighting Application |
| 000B41 |
| Growth of pattern-free InN micropyramids by metalorganic chemical vapor deposition |
| 000B51 |
| Facile synthesis of SnO2 nanograss array films by hydrothermal method |
| 000B78 |
| Electrodeposition and optical properties of highly oriented γ-CuI thin films |
| 000B99 |
| Effect of methanol treatment on performance of phosphorescent dye doped polymer light-emitting diodes |
| 000C01 |
| Effect of epilayer's growth temperature on crystalline quality of In As0.6P0.4/InP grown by two-step growth method |
| 000C04 |
| Effect of Different Solvents on the Performance of Organic Light-Emitting Device Based on Red-Fluorescent ACY Dye by Spin Coating Method |
| 000C08 |
| Different growth mechanisms of bimodal InAs/GaAs QDs |
| 000C17 |
| Correlation between the 3.31-eV emission and the doping level in indium-doped ZnO nanostructures |
| 000C21 |
| Characterization of optoelectronic properties of the ZnO nanorod array using surface photovoltage technique |
| 000C25 |
| Blue-shift photoluminescence from porous InAlAs |
| 000C34 |
| Abnormal temperature dependent photoluminescence of self-assembled InAs/GaAs surface quantum dots with high areal density |
| 000C47 |
| A New Dithienylbenzotriazole-Based Poly(2,7-carbazole) for Efficient Photovoltaics |
| 000C48 |
| A Fluorene-Oxadiazole Copolymer for White Light-Emitting Electrochemical Cells |
| 000C52 |
| 1.3 μm InAs/GaAs quantum dots with broad emission spectra |
| 000C58 |
| White light emission from Tm3+/Dy3+ co-doped oxyfluoride germanate glasses under UV light excitation |
| 000C59 |
| White Organic Light-Emitting Diodes Based on a Novel Starburst Fluorene Derivative |
| 000C68 |
| Two highly connected POM-based hybrids varying from 2D to 3D: The use of the isomeric ligands |
| 000C73 |
| Ti02 nanoparticles incorporated with CuInS2 clusters: preparation and photocatalytic activity for degradation of 4-nitrophenol |
| 000C76 |
| Thermal treatment of indium-doped Cd1-xZnxTe single crystals |
| 000C80 |
| The synthesis of Sn-doped ZnO nanowires on ITO substrate and their optical properties |
| 000C82 |
| The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers |
| 000C94 |
| The Al-doping contents dependence of the crystal growth and energy band structure in Al:ZnO thin films |
| 000C97 |
| Synthesis, thermal, photoluminescent, and electroluminescent properties of a novel quaternary Eu(III) complex containing a carbazole hole-transporting functional group |
| 000D01 |
| Synthesis, characterization and high-efficiency blue electroluminescence based on coumarin derivatives of 7-diethylamino-coumarin-3-carboxamide |
| 000D02 |
| Synthesis of In/InP core-shell nanospheres and their transformation into InP hollow nanospheres |
| 000D04 |
| Synthesis of In-doped Ga2O3 zigzag-shaped nanowires and optical properties |
| 000D11 |
| Synthesis and characterization of In2S3 nanoparticles |
| 000D12 |
| Synthesis and White Electroluminescent Properties of Multicomponent Copolymers Containing Polyfluorene, Oligo(phenylenevinylene), and Porphyrin Derivatives |
| 000D72 |
| Photoluminescence investigation of ZnO:P nanoneedle arrays on InP substrate by pulsed laser deposition |
| 000D79 |
| Photo-and electro-luminescent properties of 5,10,15,20-tetra-p-tolyl-21H,23H-porphine doped poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene] films |
| 000D82 |
| PHOTOLUMINESCENCE FROM RARE EARTH IONS DOPED NANOCRYSTALS |
| 000D84 |
| Optimization of AlInGaAs/InGaAs/InAs strain compensated triangular quantum wells grown by gas source molecular beam epitaxy for laser applications in 2.1-2.4 μm range |
| 000D85 |
| Optical properties studies in InGaN/GaN multiple-quantum well |
| 000E22 |
| Influence of hole transporter doping on electroluminescent property of novel fluorene molecular material |
| 000E25 |
| Influence of Mn doping on the microstructure and optical properties of CdS |
| 000E34 |
| InGaN nanorod arrays grown by molecular beam epitaxy : Growth mechanism structural and optical properties |
| 000E52 |
| Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method |
| 000E96 |
| Electrical and Photoresponse Properties of an Intramolecular p-n Homojunction in Single Phosphorus-Doped ZnO Nanowires |
| 000F01 |
| Effects of Cr-doping on the optical and magnetic properties in ZnO nanoparticles prepared by sol-gel method |
| 000F06 |
| Effect of annealing temperature on the structure and optical properties of In-doped ZnO thin films |
| 000F12 |
| Direct observation of single InAs/GaAs quantum dot spectrum without mesa or mask |
| 000F21 |
| Diarylmethylene-bridged 4,4'-(bis(9-carbazolyl))biphenyl: morphological stable host material for highly efficient electrophosphorescence |
| 000F33 |
| Crystal Structure of In2O3(ZnO)m Superlattice Wires and Their Photoluminescence Properties |
| 000F37 |
| Conductivity enhancement by slight indium doping in ZnO nanowires for optoelectronic applications |
| 000F38 |
| Color-tunable organic light-emitting diodes based on exciplex emission |
| 000F40 |
| Characteristics of photoluminescence and Raman spectra of InP doped silica fiber |
| 000F50 |
| Aqueous synthesis of mercaptopropionic acid capped Mn2+-doped ZnSe quantum dots |
| 000F52 |
| Anomalous coarsening of self-assembled InAs quantum dots on vicinal GaAs (100) substrates |
| 000F53 |
| Annealing behaviors of long-wavelength InAs/GaAs quantum dots with different growth procedures by metalorganic chemical vapor deposition |
| 000F63 |
| A sextuple hydrogen bonding molecular duplex bearing 1,8-naphthalimide moieties and polymer light-emitting diode based on it |
| 000F85 |
| Urea-based hydrothermal growth, optical and photocatalytic properties of single-crystalline In(OH)3 nanocubes |
| 000F86 |
| Ultrathin β-In2S3 Nanobelts : Shape-Controlled Synthesis and Optical and Photocatalytic Properties |
| 001006 |
| The characterization and properties of InN grown by MOCVD |
| 001009 |
| Temperature dependence of surface quantum dots grown under frequent growth interruption |
| 001010 |
| Temperature dependence of PL spectrum in researching InGaAs/GaAs single quantum well |
| 001014 |
| Synthesis of MDMO-PPV capped PbS quantum dots and their application to solar cells |
| 001015 |
| Synthesis and optical properties of ZnO nanowires with a modulated structure |
| 001016 |
| Synthesis and near-infrared luminescent properties of some ruthenium complexes |
| 001017 |
| Synthesis and luminescent properties of Sr4Al14O25:Eu2+ blue-green emitting phosphor for white light-emitting diodes (LEDs) |
| 001031 |
| Structural and photoluminescence properties of single-crystalline In2O3 films grown by metal organic vapor deposition |
| 001032 |
| Structural and photoluminescence properties of single crystalline SnO2:In films deposited on α-Al2O3 (0001) by MOCVD |
| 001036 |
| Spectroscopy of long wavelength coupled quantum dots |
| 001037 |
| Solution-processable highly efficient yellow-and red-emitting phosphorescent organic light emitting devices from a small molecule bipolar host and iridium complexes |
| 001058 |
| Preparation and characterization of copper indium selenide powders and films |
| 001061 |
| Polarization dependence of absorption in strongly vertically coupled InAs/GaAs quantum dots for two-color far-infrared photodetector |
| 001064 |
| Photoluminescence and electroluminescence of a tripodal compound containing 7-diethylamino-coumarin moiety |
| 001076 |
| Optimizing the GaAs capping layer growth of 1.3 μm InAs/GaAs quantum dots by a combined two-temperature and annealing process at low temperatures |
| 001077 |
| Optical waveguide properties of single indium oxide nanofibers |
| 001078 |
| Optical transitions of InAs/In0.36Ga0.64As/GaAs(311B) surface quantum dots clearly identified by the piezoreflectance technique |
| 001079 |
| Optical properties of InAs/In0.15Ga0.85As quantum dots-in-a-well studied by piezomodulated reflectance spectroscopy |
| 001094 |
| Mn-including InAs quantum dots fabricated by Mn implantation |
| 001103 |
| Linear polarization in the emission spectra of multiexciton states in InAs/GaAs self-assembled quantum dots |
| 001109 |
| Iridium complexes embedded into and end-capped onto phosphorescent polymers : optimizing PLED performance and structure-property relationships |
| 001120 |
| In Situ Growth of Self-Assembled and Single In2O3 Nanosheets on the Surface of Indium Grains |
| 001135 |
| Hierarchical chlorine-doped rutile TiO2 spherical clusters of nanorods : Large-scale synthesis and high photocatalytic activity |
| 001137 |
| Growth and characterization of highly oriented CuBr thin films through room temperature electrochemical route |
| 001151 |
| Evolution in shapes of a series of (111)-based In2O3 particles |
| 001157 |
| Enhanced electroluminescence of Eu3+ by Tb3+ in complexes Tb1- xEux(TTA)3Dipy |
| 001159 |
| Emission dynamics of InAs self-assembled quantum dots with different cap layer structures |
| 001164 |
| Electron dynamics in modulation p-doped InGaAs/GaAs quantum dots |
| 001166 |
| Electroluminescence and Photovoltaic Properties of Poly(p-phenylene vinylene) Derivatives with Dendritic Pendants |
| 001180 |
| Effects of accumulated strain on the surface and optical properties of stacked 1.3 μm InAs/GaAs quantum dot structures |
| 001183 |
| Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111) |
| 001187 |
| Effect of buffer growth temperature on crystalline quality and optical property of In0.82Ga0.18As/InP grown by LP-MOCVD |
| 001205 |
| Covalent integration of luminescent Eu (III) complex onto composite conductors or semiconducting substrates by grafting with organosilane |
| 001207 |
| Compositional and temperature dependence of the energy band gap of CuxInySe2 epitaxial layers |
| 001208 |
| Competitive growth of In2O3 nanorods with rectangular cross sections |
| 001214 |
| Characterization of a-plane InN film grown on r-plane sapphire by MOCVD |
| 001219 |
| Blue-violet luminescence double peak of In-doped films prepared by radio frequency sputtering |
| 001240 |
| A facile and efficient method for rapid detection of trace nitroaromatics in aqueous solution† |
| 001242 |
| A Stable Red Emission in Polymer Light-Emitting Diodes based on Phenothiazine Derivative |
| 001244 |
| A Host Crystal for the Rare-Earth Ion Dopants : Synthesis of Pure and Ln-Doped Urchinlike BiPO4 Structure and Its Photoluminescence |
| 001247 |
| 1.54 μm Near-infrared photoluminescent and electroluminescent properties of a new Erbium (III) organic complex |
| 001253 |
| Ultraviolet electroluminescence from organic light-emitting diode with cerium(III)-crown ether complex |
| 001260 |
| The state filling effect in p-doped InGaAs/GaAs quantum dots |
| 001261 |
| The photoluminescent and electroluminescent properties of a new Europium complex |
| 001263 |
| The influence of the coating metals with various work function on the photoluminescence of a GaN-based blue LED wafer |
| 001277 |
| Temperature-dependent photoluminescence of undoped, N-doped and N-in codoped ZnO thin films |
| 001279 |
| Synthesis, structure and fluorescence properties of a highly stable indium(III)-2,5-pyridinedicarboxylate coordination polymer |
| 001283 |
| Synthesis and characterization of white-light-emitting polyfluorenes containing orange phosphorescent moieties in the side chain |
| 001285 |
| Synthesis and characterization of new 3-alkylthiophene copolymer that exhibit orange-red photoluminescence and electroluminescence |
| 001287 |
| Syntheses, crystal structures and photoluminescence properties of three novel organically bonded indium selenates or selenites |
| 001302 |
| Structural and electrical properties of p-type ZnO films prepared by Ultrasonic Spray Pyrolysis |
| 001306 |
| SnO2/In2O3 one-dimensional nano-core-shell structures : Synthesis, characterization and photoluminescence properties |
| 001315 |
| Rapid photoluminescence quenching in GaInNAs quantum wells at low temperature |
| 001319 |
| Properties of indium-doped ZnO films prepared in an oxygen-rich plasma |
| 001329 |
| Photoluminescence study of AlGaInP/GaInP quantum well intermixing induced by zinc impurity diffusion |
| 001330 |
| Photoluminescence of InP nanocrystals embedded in silica gel-glasses as a function of temperature, and excitation power |
| 001331 |
| Photoluminescence dynamics and structural investigation of InGaN/GaN multiple quantum well light emitting diodes grown by metalorganic chemical vapor deposition |
| 001337 |
| Optical, structural, and magnetic properties of p-type InMnP: Zn implanted with the Mn (1 and 10 at.%) |
| 001338 |
| Novel light-emitting electrophosphorescent copolymers based on carbazole with an Ir complex on the backbone |
| 001341 |
| New synthesis of single-crystalline InVO4 nanorods using an ionic liquid |
| 001342 |
| New polyphenylene-and polyphenylenevinylene-based copolymers containing triarylpyrazoline units in the main chains |
| 001351 |
| Multiple confined-state transitions within surface quantum dots by a piezomodulation reflectance study |
| 001353 |
| Morphological control of Cu2O micro-nanostructure film by electrodeposition |
| 001360 |
| MBE growth of very short period InAs/GaSb type-II superlattices on (0 0 1)GaAs substrates |
| 001361 |
| Luminescent supramolecular polymers : Cd2+-directed polymerization and properties |
| 001374 |
| Improving the performance of phosphorescent polymer light-emitting diodes using morphology-stable carbazole-based iridium complexes |
| 001387 |
| High bright blue organic light-emitting diodes based on a novel silole derivative |
| 001393 |
| Green light-emitting polyfluorenes with improved color purity incorporated with 4,7 -diphenyl -2,1,3 -benzothiadiazole moieties |
| 001394 |
| Green electroluminescence from ZnO/n-InP heterostructure fabricated by metalorganic chemical vapour deposition |
| 001396 |
| Fluorene-based copolymers for color-stable blue light-emitting diodes |
| 001397 |
| Fabrication of ultra-low density and long-wavelength emission InAs quantum dots |
| 001400 |
| Fabrication of InGaAlAs MQW buried heterostructure lasers by narrow stripe selective MOVPE |
| 001410 |
| Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction |
| 001414 |
| Energy transfer and heat-treatment effect of photoluminescence in Eu3+ -doped TbPO4 nanowires |
| 001425 |
| Electrochemical/chemical synthesis of highly-oriented single-crystal ZnO nanotube arrays on transparent conductive substrates |
| 001436 |
| Efficient organic electroluminescent devices based on an organosamarium complex |
| 001442 |
| Effect of size non-uniformity on photoluminescence from ensembles of InAs quantum dots embedded in GaAs |
| 001447 |
| Effect of electron-hole spatial correlation on spin relaxation dynamics in InAs submonolayer |
| 001468 |
| Comparative study on the synthesis, photoluminescence and application in InGaN-based light-emitting diodes of TGA:Ce3+ phosphors |
| 001471 |
| Color stable white organic light-emitting diode based on a novel triazine derivative |
| 001473 |
| Charge tunneling and cross recombination at organic heterojunction under electric fields |
| 001477 |
| Catalyst-free synthesis of vertically aligned screw-shape InZnO nanorods array |
| 001484 |
| Anomalous photoluminescence of InAs quantum dots implanted by Mn ions |
| 001502 |
| Two peaks observed in the electroluminescence spectra of Alq3-based OLEDS |
| 001507 |
| Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots |
| 001518 |
| The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 μm wavelength GaInNAs/GaAs quantum well with high indium content |
| 001522 |
| Temperature dependence of surface quantum dots grown under frequent growth interruption |
| 001523 |
| Temperature dependence of interband transition energy in InGaAsN strain-compensated quantum-well and ridge-waveguide lasers fabricated with pulsed anodic oxidation |
| 001524 |
| Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots |
| 001525 |
| Synthesis, characterization, photophysics and electroluminescence based on a series of pyran-containing emitters |
| 001533 |
| Synthesis and characterization of novel red-emitting alternating copolymers based on fluorene and diketopyrrolopyrrole derivatives |
| 001537 |
| Surface and optical properties of AlGaInP films grown on GaAs by metalorganic chemical vapor deposition |
| 001539 |
| Study of nucleation positions of InAs islands on stripe-patterned GaAs (100) substrate |
| 001547 |
| Structural and optical properties of violet InGaN/AlInGaN light-emitting diodes grown by MOCVD |
| 001554 |
| Shape-controlled synthesis of ternary chalcogenide ZnIn2S4 and CuIn(S,Se)2 nano-/microstructures via facile solution route |
| 001569 |
| Piezomodulated reflectance study of self-assembled InAs quantum dots-in-a-well |
| 001570 |
| Photoluminescence of ZnO thin films on Si substrate with and without ITO buffer layer |
| 001571 |
| Photoluminescence characteristics of low indium composition InGaN thin films grown on sapphire by metalorganic chemical vapor deposition |
| 001572 |
| Photoluminescence and electroluminescence of 3-methyl-8-dimethylaminophenazine |
| 001575 |
| Phenylene vinylene-based electroluminescent polymers with electron transport block in the main chain |
| 001576 |
| Orange and red emitting OLEDs based on phenothiazine polymers |
| 001577 |
| Optimization of active region for 1.3-μm GaInAsP compressive-strain multiple-quantum-well ridge waveguide laser diodes |
| 001579 |
| Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness |
| 001580 |
| Optical properties of InN films grown by molecular beam epitaxy at different conditions |
| 001581 |
| Optical properties of InGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy |
| 001582 |
| Optical and local current studies on InAs/GaAs quantum dots |
| 001583 |
| Optical and electrical properties of indium-doped Cd0.9Zn0.1Te crystal |
| 001588 |
| Narrow stripe selective growth of oxide-free InGaAlAs/InGaAlAs MQWs by ultra-low pressure MOVPE |
| 001594 |
| MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting |
| 001595 |
| Low temperature step-graded InAlAs/GaAs metamorphic buffer layers grown by molecular beam epitaxy |
| 001603 |
| Influence of dislocation stress field on distribution of quantum dots |
| 001609 |
| InGaP/GaAs heterojunction bipolar transistor grown by solid-source molecular beam epitaxy with a GaP decomposition source |
| 001610 |
| Improved quality of InGaN/GaN multiple quantum wells by a strain relief layer |
| 001614 |
| High-quality multiple quantum wells selectively grown with tapered masks by ultra-low-pressure MOCVD |
| 001615 |
| High-performance EML grown on taper-masked pattern substrates by ultra-low-pressure MOCVD |
| 001616 |
| High-efficiency, electrophosphorescent polymers with porphyrin-platinum complexes in the conjugated backbone : Synthesis and device performance |
| 001621 |
| Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties |
| 001623 |
| Growth and characterization of InAs layers obtained by liquid phase epitaxy from Bi solvents |
| 001645 |
| Electron g factors and optical properties of InAs quantum ellipsoids |
| 001658 |
| Effect of GaAs(1 0 0) 2° surface misorientation on the formation and optical properties of MOCVD grown InAs quantum dots |
| 001673 |
| Critical point transitions of wurtzite indium nitride |
| 001681 |
| Catalytic growth of In2O3 nanobelts by vapor transport |
| 001683 |
| Bright and colour stable white polymer light-emitting diodes |
| 001684 |
| Band gap blue shift of InGaAs/InP multiple quantum wells by different dielectric film coating and annealing |
| 001687 |
| Anomalous temperature dependence of photoluminescence peak energy in InAs/InAlAs/InP quantum dots |
| 001705 |
| The structural and optical properties of Cu2O films electrodeposited on different substrates |
| 001709 |
| The effect of the AlxGa1-xN/AIN buffer layer on the properties of GaN/Si(111) film grown by NH3-MBE |
| 001711 |
| The effect of a combined InAlAs and GaAs strained buffer layer on the structure and optical property of InAs quantum dots |
| 001713 |
| The effect of In content on high-density InxGa1-xAs quantum dots |
| 001716 |
| Synthesis and properties of new orange red light-emitting hyperbranched and linear polymers derived from 3,5-dicyano-2,4,6-tristyrylpyridine |
| 001717 |
| Synthesis and properties of new luminescent poly(arylenevinylene) copolymers containing spirobifluorene |
| 001719 |
| Synthesis and characterization of novel phenyl-substituted poly(p-phenylene vinylene) derivatives |
| 001720 |
| Synthesis and characterization of blue-light-emitting alternating copolymers of 9,9-dihexylfluorene and 9-arylcarbazole |
| 001723 |
| Syntheses and electroluminescence properties of conjugated poly(p-phenylene vinylene) derivatives bearing dendritic pendants |
| 001730 |
| Study of quasi-monodisperse In2O3 nanocrystals : Synthesis and optical determination |
| 001735 |
| Structural and optical properties of InAs/GaAs quantum dots emitting at 1.5μm |
| 001737 |
| Sol-gel synthesis of luminescent Inp nanocrystals embedded in silica glasses |
| 001738 |
| Sol-gel synthesis and photoluminescence of III-V semiconductor InAs nanocrystals embedded in silica glasses |
| 001740 |
| Size-controllable growth of Single crystal In(OH)3 and In2O3 nanocubes |
| 001743 |
| Self-assembly of a novel β-In2S3 nanostructure exhibiting strong quantum confinement effects |
| 001747 |
| Room temperature 1.25 μm emission from high indium content InxGa1-xAs/GaAs quantum wells grown by molecular beam epitaxy |
| 001748 |
| Raman and photoluminescence studies on nanocrystalline ZnO grown on GaInPAs substrates |
| 001761 |
| Photoluminescence pressure coefficients of InAs/GaAs quantum dots |
| 001770 |
| Optical properties of digital-alloy In0.49(Ga1-zAlz)0.51P/GaAs and InGaP/In0.49(Ga1-zAlz)0.51P multi-quantum wells grown by molecular-beam epitaxy |
| 001776 |
| Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 μm (InyGa1-yAs/GaAs1-xSbx)/GaAs bilayer quantum wells |
| 001782 |
| Luminescence properties of multi-layer InGaN quantum dots grown on C- and R-plane sapphire substrates |
| 001785 |
| Large-area In2O3 ordered pore arrays and their photoluminescence properties |
| 001786 |
| Investigation on the performances of multi-quantum barriers in a single quantum well solar cell : Photovoltaic materials and phenoma |
| 001787 |
| Investigation into the effect of LiF at the organic interface on electroluminescence |
| 001790 |
| Influence of the low temperature buffer layer on InP epitaxial growth on GaAs substrates |
| 001791 |
| Influence of rapid thermal annealing on InAs/InAlAs/InP quantum wires with different InAs deposited thickness |
| 001807 |
| High-temperature electron-hole liquid and dynamics of Fermi excitons in a In0.65Al0.35As/Al0.4Ga0.6As quantum dot array |
| 001813 |
| Growth and characterization of InN on sapphire substrate by RF-MBE |
| 001815 |
| GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures |
| 001829 |
| Effects of in doping on the properties of CdZnTe single crystals |
| 001830 |
| Effects of In surfactant on the crystalline and photoluminescence properties of GaN nanowires |
| 001832 |
| Effect of layer thickness of immiscible alloy In0.52Al0.48As on the morphology of InAs nanostructure grown on In0.52Al0.48As/InP (001) |
| 001833 |
| Effect of electric fields on photoluminescence of 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran |
| 001839 |
| Decay mechanisms of passive matrix organic light-emitting diode display |
| 001843 |
| Construction and photoluminescence of In2O3 nanotube array by CVD-template method |
| 001844 |
| Conjugated fluorene and silole copolymers : Synthesis, characterization, electronic transition, light emission, photovoltaic cell, and field effect hole mobility |
| 001848 |
| Characteristics of oxide-free InGaAlAs layers grown by narrow stripe selective MOVPE |
| 001851 |
| Blue organic electroluminescent device with tetra(β-naphthyl)silane as hole blocking materials |
| 001853 |
| Annealing effect on optical properties of ZnO films fabricated by cathodic electrodeposition |
| 001869 |
| 980 nm high power strained quantum well lasers array fabricated by MBE |
| 001873 |
| Improvements of InGaN/GaN quantum-well interfaces and radiative efficiency with InN interfacial layers |
| 001874 |
| Controlled carbon nanotube sheathing on ultrafine InP nanowires |
| 001878 |
| 20 meV-deep donor level in InN film of 0.76 eV band gap grown by plasma-assisted nitrogen source |
| 001884 |
| Cluster size and composition variations in yellow and red light-emitting InGaN thin films upon thermal annealing |
| 001885 |
| Indium-assisted synthesis on GaN nanotubes |
| 001886 |
| Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature |
| 001888 |
| Study of lateral-carrier transport in InAs quantum-dot heterostructures by optical spectroscopy |
| 001896 |
| On the origin of spin loss in GaMnN/InGaN light-emitting diodes |
| 001898 |
| Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions |
| 001904 |
| Interpretation of anomalous temperature dependence of anti-Stokes photoluminescence at GaInP2/GaAs interface |
| 001908 |
| Tunable and white light-emitting diodes of monolayer fluorinated benzoxazole graft copolymers |
| 001910 |
| Mechanism of enhanced luminescence in InxAlyGa1-x-yN quaternary epilayers |
| 001914 |
| Observation of spontaneous ordering in the optoelectronic material GaInNP |
| 001917 |
| Ultra-High-Density InGaN Quantum Dots Grown by Metalorganic Chemical Vapor Deposition |
| 001919 |
| Polarized luminescence and absorption of highly oriented, fully conjugated, heterocyclic aromatic rigid-rod polymer poly-p-phenylenebenzobisoxazole |
| 001923 |
| Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy |
| 001938 |
| Synthesis and characterization of naphthyl-substituted poly(P-phenylenevinylene)s with few structural defects for polymer light-emitting diodes |
| 001942 |
| Study on the perfection of in situ P-injection synthesis LEC-InP single crystals |
| 001944 |
| Study of the photoexcited carrier dynamics in InP:Fe using time-resolved reflection and photoluminescence spectra |
| 001946 |
| Study of stimulated emission from InGaN/GaN multiple quantum well structures |
| 001947 |
| Study of photoluminescence and absorption in phase-separation InGaN films |
| 001951 |
| Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows |
| 001952 |
| Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition |
| 001955 |
| Soluble, saturated-red-light-emitting poly(p-phenylenevinylene) containing triphenylamine units and cyano groups |
| 001970 |
| Photoluminescence study of InGaN/GaN quantum dots grown on passivated GaN surface |
| 001971 |
| Photoluminescence from InGaN/GaN MQWs on sapphire and membranes fabricated by laser lift-off |
| 001975 |
| Optical property of self-assembled InAs quantum dots in Al0.5Ga0.5As barriers grown by molecular beam epitaxy |
| 001976 |
| Optical properties of highly disordered InGaP by solid-source molecular beam epitaxy with a GaP decomposition source |
| 001977 |
| Optical characteristics of InAs quantum dots capped with short period GaAs/InAs superlattices and InGaAs combination layers |
| 001980 |
| New series of highly phenyl-substituted polyfluorene derivatives for polymer light-emitting diodes |
| 001983 |
| Mode Characteristics of Semiconductor Equilateral Triangle Microcavities With Side Length of 5-20 μm |
| 001992 |
| Influence of threading dislocations on the properties of InGaN-based multiple quantum wells |
| 001996 |
| Indium mole fraction effect on the structural and optical properties of quaternary AlInGaN epilayers |
| 001998 |
| InAs nanostructure grown with different growth rate in InAlAs matrix on InP (001) substrate |
| 001A04 |
| High-quality poly[2-methoxy-5-(2'-ethylhexyloxy)-p-phenylenevinylene] synthesized by a solid-liquid two-phase reaction: Characterizations and electroluminescence properties |
| 001A09 |
| Growth of In doped CdZnTe by vertical Bridgman method and the effect of In on the crystal properties |
| 001A23 |
| Effects of indium doping on the properties of AlAs/GaAs quantum wells and inverted AlGaAs/GaAs two-dimensional electron gas |
| 001A25 |
| Effects of TMIn flow on the interface and optical properties of InGaN/GaN mutiple quantum wells |
| 001A26 |
| Effect of trimethylgallium flow on the structural and optical properties of InGaN/GaN multiple quantum wells |
| 001A27 |
| Effect of the InAlAs and InGaAs combination strain-reducing layer on 1.3 μm emission self-assembled InAs/GaAs quantum dots |
| 001A34 |
| Crack-free InAlGaN quaternary alloy films grown on Si(1 1 1) substrate by metalorganic chemical vapor deposition |
| 001A37 |
| Characterization of InAs quantum dots on lattice-matched InAlGaAs/InP superlattice structures |
| 001A58 |
| Enhancement of room-temperature photoluminescence in InAs quantum dots |
| 001A60 |
| Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31 |
| 001A67 |
| Ordering effects on optical transitions in GaxIn1-xP/(Al0.66Ga0.34)yIn1-yP quantum wells studied by photoluminescence and reflectivity spectroscopy |
| 001A70 |
| Silicon Doping Induced Increment of Quantum Dot Density |
| 001A74 |
| Piezoelectric, electro-optical, and photoelastic effects in InxGa1-xN/GaN multiple quantum wells |
| 001A80 |
| Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths |
| 001A81 |
| Highly strained 1.24-μm InGaAs/GaAs quantum-well lasers |
| 001A84 |
| Transport characteristics of InAs/GaAs quantum-dot infrared photodetectors |
| 001A85 |
| Room-temperature ultraviolet-emitting In2O3 nanowires |
| 001A90 |
| Surface band-bending effects on the optical properties of indium gallium nitride multiple quantum wells |
| 001A92 |
| Quantum-well-width dependencies of postgrowth thermal annealing effects of InGaN/GaN quantum wells |
| 001A93 |
| Temperature dependence of photoreflectance in InAs/GaAs quantum dots |
| 001B03 |
| High-Indium-Content InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes |
| 001B05 |
| Persistent photoconductivity in InxAlyGa1-x-yN quaternary alloys |
| 001B08 |
| Strong green luminescence in quaternary InAlGaN thin films |
| 001B09 |
| Tunneling through InAs quantum dots in AlGaAs/GaAs double barrier resonant tunneling diodes with InGaAs quantum well emitters |
| 001B12 |
| Converse piezoelectric effect and photoelastic effect in InGaN/GaN multiple quantum wells |
| 001B13 |
| Mode splitting in photoluminescence spectra of a quantum-dot-embedded microcavity |
| 001B29 |
| The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing |
| 001B45 |
| Structure and optical properties of upper In(Ga)As quantum dots on a different seed layer with a thin GaAs spacer layer |
| 001B46 |
| Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0 0 0 1) sapphire substrate |
| 001B51 |
| Role of different cap layers tuning the wavelength of self-assembled InAs/GaAs quantum dots |
| 001B53 |
| Raman spectroscopic studies of InAs epilayers grown on the GaAs (001) substrates |
| 001B68 |
| Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells |
| 001B73 |
| Narrow blue light-emitting diodes based on a copolymer consisting of fluorene and quinoline units |
| 001B82 |
| MOCVD growth of strain-compensated multi-quantum wells light emitting diode |
| 001B83 |
| Luminescence of In2S3 nanocrystallites embedded in sol-gel silica xerogel |
| 001B84 |
| Localized exciton dynamics in AlInGaN alloy |
| 001B86 |
| Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells |
| 001B89 |
| InGaN/GaN MQW high brightness LED grown by MOCVD |
| 001B90 |
| In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate |
| 001B91 |
| In0.25Ga0.75As films growth on the thin GaAs/AlAs buffer layer on the GaAs(0 0 1) substrate |
| 001B98 |
| Growth temperature effect on the optical and material properties of AlxInxGa1-x-yN epilayers grown by MOCVD |
| 001B99 |
| Growth of nanoscale InGaN self-assembled quantum dots |
| 001C03 |
| GalnNAs: Growth and characterization |
| 001C07 |
| Fabrication and photoluminescence characteristics of single crystalline In2O3 nanowires |
| 001C12 |
| Epitaxial growth of high-quality ZnSSe on ZnSSe/In/glass substrate |
| 001C13 |
| Electronic structure of vertically stacked InAs self-assembled quantum dots by deep level transient spectroscopy |
| 001C17 |
| Effects of ammonia flow at growth temperature ramping process on optical properties of InGaN/GaN multiple quantum wells |
| 001C18 |
| Effects of TMIn flow rate of barrier layer on the optical and structural properties of InxGa1-xN/InyGa1-yN multiple quantum wells |
| 001C23 |
| Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots |
| 001C24 |
| Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs (001) substrate |
| 001C25 |
| Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs |
| 001C29 |
| Deep level transient spectroscopy of vertically stacked InAs/Al0.5Ga0.5As self-assembled quantum dots |
| 001C35 |
| Capacitance-voltage spectroscopy of In0.5Ga0.5As self-assembled quantum dots in double quantum wells under selective photo-excitation |
| 001C46 |
| Abnormal temperature dependence of photoluminescence from self-assembled InAs quantum dots covered by an InAlAs/InGaAs combination layer |
| 001C50 |
| A novel method to realize InGaN self-assembled quantum dots by metalorganic chemical vapor deposition |
| 001C51 |
| A novel emitting polymer with bipolar carrier transporting abilities |
| 001C58 |
| Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures |
| 001C61 |
| Strong Screening Effect of Photo-Generated Carriers on Piezoelectric Field in In0.13Ga0.87N/In0.03Ga0.97N Quantum Wells |
| 001C73 |
| Wavelength of Emission from InGaAsN Quantum Wells as a Function of Composition of the Quaternary Compound |
| 001C74 |
| Photoreflectance and photoluminescence spectroscopy of the lattice-matched InGaAs/InAlAs single quantum well |
| 001C78 |
| Effect of InGaP Barrier Thickness on the Performance of 1.3-μm InAsP/InP/InGaP Strain-Compensated Multiple-Quantum-Well Laser Diodes |
| 001C79 |
| Multiple-component photoluminescence decay caused by carrier transport in InGaN/GaN multiple quantum wells with indium aggregation structures |
| 001C81 |
| Photoluminescence study of hydrogen passivation in InAs1-xNx/InGaAs single-quantum well on InP |
| 001C82 |
| Thickness-dependent renormalization of strain effects on self-organized InAs quantum dots grown on GaAs |
| 001C89 |
| White electroluminescence from hydrogenated amorphous-SiNx thin films |
| 001C90 |
| Piezoelectric effect on Al0.35-δInδGa0.65N/GaN heterostructures |
| 001C92 |
| Quasiregular quantum-dot-like structure formation with postgrowth thermal annealing of InGaN/GaN quantum wells |
| 001C97 |
| Mechanism of enhanced luminescence in InxAlyGa1-x-yN quaternary alloys |
| 001D00 |
| Effect of composition inhomogeneity on the photoluminescence of InGaN/GaN multiple quantum wells upon thermal annealing |
| 001D05 |
| Characteristics of δ-doped InP heterostructures using In0.34Al0.66As0.85Sb0.15 Schottky layer |
| 001D13 |
| Tuning of exciton-photon coupling in a planar semiconductor microcavity by applying hydrostatic pressure |
| 001D19 |
| The mechanism of blueshift in excitation-intensity-dependent photoluminescence spectrum of nitride multiple quantum wells |
| 001D22 |
| The effects of concomitant In and N incorporation on the photoluminescence of GaInNAs |
| 001D25 |
| Synthesis of oxygen-free nanosized InN by pulse discharge |
| 001D28 |
| Synthesis and photoluminescence of single-crystalline In2O3 nanowires |
| 001D34 |
| Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer |
| 001D36 |
| Strain relaxation of InP film directly grown on GaAs patterned compliant substrate |
| 001D44 |
| Photoluminescence of InAs self-organized quantum dots on (001)InP substrate with GaAs interlayer |
| 001D45 |
| Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour |
| 001D56 |
| Luminescence of Cu2+ and In3+ co-activated ZnS nanoparticles |
| 001D57 |
| Low temperature photoluminescence of InAs self-organized quantum dots on (001) InP substrate with GaAs interlayer |
| 001D61 |
| Influence of strain on annealing effects of In(Ga)As quantum dots |
| 001D62 |
| Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots |
| 001D63 |
| InAsyP1-y/InP quantum wells grown by solid source molecular beam epitaxy using As2 and As4 |
| 001D71 |
| Green electroluminescent device with a terbium β-diketonate complex as emissive center |
| 001D77 |
| Excitonic photoluminescence properties of nanocrystalline GaSb and Ga0.62In0.38Sb embedded in silica films |
| 001D84 |
| Effect on the optical properties and surface morphology of cubic GaN grown by metalorganic chemical vapor deposition using isoelectronic indium surfactant doping |
| 001D85 |
| Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots |
| 001D88 |
| Dependence of optical properties on the structure of multi-layer self-organized InAs quantum dots emitting near 1.3 μm |
| 001D97 |
| Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers |
| 001E00 |
| An organic electroluminescent device made from a gadolinium complex |
| 001E03 |
| A novel terbium (III) beta-diketonate complex as thin film for optical device application |
| 001E05 |
| A novel line-order of InAs quantum dots on GaAs |
| 001E06 |
| A novel in situ oxidization-sulfidation growth route via self-purification process to β-In2S3 dendrites |
| 001E07 |
| A novel approach for the evaluation of band gap energy in semiconductors |
| 001E10 |
| A new method to fabricate InGaN quantum dots by metalorganic chemical vapor deposition |
| 001E13 |
| Temperature-dependent contactless electroreflectance and photoluminescence study of GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures |
| 001E14 |
| Optical properties of as-grown and annealed InAs(N)/InGaAsP strained multiple quantum wells |
| 001E17 |
| Comparison of InAs/GaAs Quantum Dot Infrared Photodetector and GaAs/(AlGa)As Superlattice Infrared Photodetector |
| 001E22 |
| Effects of In and Ga interdiffusion on the optical gain of InGaN/GaN quantum well |
| 001E26 |
| Tunnel-regenerated multiple-active-region light-emitting diodes with high efficiency |
| 001E28 |
| Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys |
| 001E31 |
| Photoluminescence and Electroluminescence Characteristics of New Disubstituted Polyacetylenes |
| 001E32 |
| Influence of Barrier Growth Temperature on the Properties of InGaN/GaN Quantum Well |
| 001E36 |
| Enhanced luminance of ZnGa2O4 phosphor by In2O3 doping |
| 001E38 |
| Thermal redistribution of photocarriers between bimodal quantum dots |
| 001E42 |
| Random telegraph noise in the photoluminescence of individual GaxIn1-xAs quantum dots in GaAs |
| 001E49 |
| Effect of thermal annealing on high indium content InGaN/GaN single quantum well structures |
| 001E52 |
| Comparison of optical transitions in InGaN quantum well structures and microdisks |
| 001E56 |
| Temperature-dependent electroluminescence in poly [2-methoxy-5(2′-ethylhexyloxy)-p-phenylenevinylene] light-emitting diode |
| 001E64 |
| Coherent optical control of acoustic phonon oscillations in InGaN/GaN multiple quantum wells |
| 001E68 |
| Phosphorus-Species-Induced Band-Gap Anomaly in InGaP Grown by Solid-Source Molecular-Beam Epitaxy |
| 001E71 |
| Persistent photoconductivity in InGaN/GaN multiquantum wells |
| 001E72 |
| Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells |
| 001E78 |
| Growth of InAsN/InGaAs(P) quantum wells on InP by gas source molecular beam epitaxy |
| 001E79 |
| Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure |
| 001E83 |
| The photoluminescence characteristics of ZnS nanocrystal doped with M3+(M = In, Ga, Al) |
| 001E84 |
| The keys to get high transconductance of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs devices |
| 001E92 |
| Synthesis and characterization of new poly(cyanoterephthalylidene)s for light-emitting diodes |
| 001F02 |
| Structural anisotropy and optical properties of InxGa1-xAs quantum dots on GaAs(001) |
| 001F09 |
| Quasi RT-CW operation of InGaAs/InGaAsP strained quantum well lasers |
| 001F14 |
| Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer |
| 001F20 |
| Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures |
| 001F21 |
| Optical properties of InGaAs quantum dots formed on InAlAs wetting layer |
| 001F23 |
| Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0≤x≤0.3) layer |
| 001F34 |
| InAs self-assembled quantum dots on GaAs/InP by low-pressure metal-organic chemical vapour deposition |
| 001F41 |
| High-quality metamorphic HEMT grown on GaAs substrates by MBE |
| 001F47 |
| Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy |
| 001F50 |
| Experimental investigation of photoluminescence dynamics of cavity polaritons under nonresonant excitation |
| 001F59 |
| Effect of InxGa1-xAs (0≤x≤0.4) capping layer on self-assembled 1.3 μm wavelength InAs/GaAs quantum islands |
| 001F67 |
| Catalytic growth of semiconducting In2O3 nanofibers |
| 001F73 |
| Analysis of room temperature PL spectra of InAs/GaAs/InP and InAs/InP self-assembled QDs : A five-band study |
| 001F85 |
| Influence of dual incorporation of In and N on the luminescence of GaInNAs/GaAs single quantum wells |
| 001F95 |
| Mechanism for photoluminescence in an InyAs1-yN/InxGa1-xAs single quantum well |
| 001F97 |
| X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices |
| 002000 |
| Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots |
| 002001 |
| Influence of InxGa1-xAs (0≤x≤0.3) Cap Layer on Structural and Optical Properties of Self-assembled InAs/GaAs Quantum Dots |
| 002005 |
| Anomalous Phosphorus Cracker Temperature-Dependent Photoluminescence Spectra of InGaP Grown by Solid Source Molecular Beam Epitaxy |
| 002009 |
| Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells |
| 002010 |
| Mechanism of luminescence in InGaN/GaN multiple quantum wells |
| 002012 |
| Magneto-Photoluminescence Study of InGaAs/GaAs Quantum Wells and Quantum Dots Grown on (111)B GaAs Substrate |
| 002013 |
| Tuning of conduction intersublevel absorption wavelengths in (In,Ga)As/GaAs quantum-dot nanostructures |
| 002016 |
| Time-resolved photoluminescence study of isoelectronic In-doped GaN films grown by metalorganic vapor-phase epitaxy |
| 002018 |
| 1.54 μm infrared photoluminescence and electroluminescence from an erbium organic compound |
| 002019 |
| Ga0.5In0.5P Barrier Layer for Wet Oxidation of AlAs |
| 002025 |
| Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures |
| 002035 |
| Experimental determination of local Strain effect on InAs/GaAs self-organized quantum dots |
| 002037 |
| Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing |
| 002038 |
| Strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures by x-ray diffraction and photoluminescence |
| 002048 |
| Two-dimensional ordering of self-assembled InAs quantum dots grown on (3 1 1)B InP substrate |
| 002053 |
| The structural and photoluminescence properties of self-organized quantum dots in InAs/In0.53 Ga0.47 As multilayer on InP substrate |
| 002056 |
| The effect of functional group substitution on the photoluminescence and electroluminescence of pyrazoline derivatives |
| 002057 |
| Temperature dependence of the optical properties of InAs/GaAs self-organized quantum dots with bimodal size distribution |
| 002058 |
| Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots |
| 002059 |
| Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers |
| 002062 |
| Study of AlGaAsSb/InGaAsSb strained quantum well grown by molecular beam epitaxy on GaSb(100) |
| 002063 |
| Structural and optical characterization of InAs nanostructures grown on (001) and high index InP substrates |
| 002064 |
| Strong temperature dependence of photoluminescence properties in visible InAlAs quantum dots |
| 002067 |
| Self-ordering of quasi-quantum wire in InAlAs/AlGaAs multilayer nanostructure and its optical anisotropy |
| 002070 |
| Room temperature 1.55 μm emission from InAs quantum dots grown on (001)InP substrate by molecular beam epitaxy |
| 002075 |
| Pressure behaviour of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots with multi-modal distribution in size |
| 002081 |
| Photoluminescence in Si and Be directly doped self-organized InAs/GaAs quantum dots |
| 002088 |
| Monochromatic-red-light emission of novel copolymers containing carbazole units and europium-acrylate complexes |
| 002095 |
| In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE |
| 002103 |
| Growth and characterization of high-quality GaInAs/AlInAs triple wells |
| 002104 |
| Gas source molecular beam epitaxy of InP-based microstructures : material growth, characterization and device applications |
| 002109 |
| Electronic characteristics of InAs/GaAs self-assembled quantum dots by deep level transient spectroscopy |
| 002115 |
| Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice |
| 002116 |
| Effects of interdiffusion on the luminescence of InAs/GaAs quantum dots covered by InGaAs overgrowth layer |
| 002119 |
| Effect of thin GaAs tensile-strained layer on InAs quantum dots on InP (001) substrate grown by LP-MOVPE |
| 002121 |
| Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes |
| 002122 |
| Effect of rapid thermal annealing on InGaAs/GaAs quantum wells |
| 002125 |
| Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots |
| 002137 |
| Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy |
| 002146 |
| 1.35 μm photoluminescence from In0.5Ga0.5As/GaAs islands grown by molecular beam epitaxy via cycled (InAs)1/(GaAs)1 monolayer deposition |
| 002161 |
| Strain effect on the band structure of InAs/GaAs quantum dots |
| 002162 |
| Influence of growth temperature of InAsP/InP strained multiple quantum wells grown by metalorganic chemical vapor deposition |
| 002170 |
| Growth and postgrowth rapid thermal annealing of InAsN/InGaAs single quantum well on InP grown by gas source molecular beam epitaxy |
| 002172 |
| Organometallic vapor phase epitaxy growth and optical characteristics of almost 1.2 μm GaInNAs three-quantum-well laser diodes |
| 002179 |
| Measurement of AlInAsSb/GaInAsSb heterojunction band offset by photoluminescence spectroscopy |
| 002185 |
| Room-temperature photoreflectance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles |
| 002187 |
| High conduction-band offset of AlInAsSb/InGaAs multiple quantum wells grown by metalorganic vapor phase epitaxy |
| 002194 |
| The optical and electrical studies of hydrogen passivation in GaInP/GaAs heterostructures |
| 002200 |
| Determination of the valence-band offset for GaInAsSb/InP heterostructure |
| 002205 |
| Structure and photoluminescence of InGaAs self-assembled quantum dots grown on InP(001) |
| 002206 |
| Room-temperature operation of In0.5Ga0.5As as quantum dot lasers grown on misoriented GaAs substrates by molecular beam epitaxy |
| 002207 |
| Reduction of spontaneous surface segregation in (InP)2/(GaP)2 quantum wells grown on tilted substrates |
| 002208 |
| Photoluminescence study of high-quality InGaAs/GaAs quantum dots on (111)B GaAs substrates |
| 002209 |
| Photoluminescence characteristics of self-assembled In0.5Ga0.5As quantum dots on vicinal GaAs substrates |
| 002210 |
| Excitation density and temperature dependent photoluminescence of InGaAs self-assembled quantum dots |
| 002211 |
| Wavelength tuning in GaAs/AlGaAs quantum wells by InAs submonolayer insertion |
| 002214 |
| Uniformity enhancement of the self-organized InAs quantum dots |
| 002216 |
| Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(3 1 1)B surfaces |
| 002227 |
| Synthesis and structure of indium oxide nanoparticles dispersed within pores of mesoporous silica |
| 002228 |
| Substrate surface atomic structure influence on the growth of InAlAs quantum dots |
| 002232 |
| Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures |
| 002233 |
| Structural and optical characterization of InAs nanostructures grown on high-index InP substrates |
| 002234 |
| Structural and optical characteristics of self-organized InAs quantum dots grown on GaAs (3 1 1)A substrates |
| 002237 |
| Solvothermal synthesis of nanocrystalline III-V semiconductors |
| 002238 |
| Size quantization effects in InAs self-assembled islands on InP(0 0 1) at the onset of 2D-to-3D transition |
| 002239 |
| Si doping effect on self-organized InAs/GaAs quantum dots |
| 002240 |
| Self-organization of wire-like InAs nanostructures on InP |
| 002241 |
| Self-organization of the InGaAs/GaAs quantum dots superlattice |
| 002242 |
| Self-assembled InAs and In0.9Al0.1As quantum dots on (0 0 1)InP substrates grown by molecular beam epitaxy (MBE) |
| 002244 |
| Reddish organic light electroluminescent device with DPP emitting layer |
| 002247 |
| Properties of a new pyrazoline derivative and its application in electroluminescence |
| 002253 |
| Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001) : Special issue papers on quantum dots |
| 002262 |
| Liquid phase epitaxial growth of AlGaInPAs on GaAs substrates |
| 002264 |
| Langmuir-Blodgett films and electroluminescent devices of amphiphilic 8-hydroxyquinoline cadmium |
| 002274 |
| Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(100) and high index substrates by molecular beam epitaxy |
| 002283 |
| Effect of growth interruption on the optical properties of InAs/GaAs quantum dots |
| 002306 |
| InGaAs/GaAs quantum dots on (111)B GaAs substrates |
| 002308 |
| Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition |
| 002311 |
| Reactive ion etching for AlGalnP/GaInP laser structures |
| 002313 |
| Photoluminescence investigation of GaInP/GaAs multiple quantum wells grown on (001) and (311) B GaAs surfaces by gas source molecular beam epitaxy |
| 002325 |
| Ordered InAs quantum dots in InAlAs matrix on (001) InP substrates grown by molecular beam epitaxy |
| 002334 |
| Self-organized InAs/GaAs quantum dots grown by gas source molecular beam epitaxy |
| 002336 |
| Studies of two-subband occupied electron gas in modulation-doped In0.52Al0.48As/In0.53Ga0.47As single quantum well by far-infrared modulated photoluminescence |
| 002337 |
| Ordering reduction in In0.5Ga0.5P grown by solid source molecular beam epitaxy |
| 002339 |
| Alterable temperature-dependent wavelength shifts in (InP)2/(GaP)2 quantum wells |
| 002342 |
| Effect of interface roughness and well width on differential reflection dynamics in InGaAs/InP quantum wells |
| 002349 |
| Thermal activation and thermal transfer of localized excitons in InAs self-organized quantum dots |
| 002351 |
| The self-organized In0-25Ga0-75As quantum dots grown by migration enhanced epitaxy |
| 002353 |
| The importance of low-temperature deposition of organic emitting layer on electroluminescent device performance |
| 002361 |
| Pressure behaviour of photoluminescence from InAs submonolayer in GaAs matrix |
| 002365 |
| Photoluminescence study of InGaAs/InAlAs single and multiple quantum wells |
| 002366 |
| Photoluminescence study of InxGa1-xAs/InyAl1-yAs one-side-modulation-doped asymmetric step quantum wells |
| 002367 |
| Photoluminescence of InAs self-organized quantum dots formation on InP substrate by MOCVD |
| 002368 |
| Photoluminescence from InAs quantum dots on GaAs(100) |
| 002369 |
| Photoexcited carrier diffusion dependence of differential reflection dynamics in InAsxP1-x/InP (x ≤ 0.35) strained-multiple-quantum wells |
| 002372 |
| Optical properties and resonant modes in GaN/AlGaN and InGaN/GaN multiple quantum well microdisk cavities |
| 002378 |
| Novel In0.49Ga0.51P./(In)GaAs/GaAs p-type modulation doped heterostructure grown by gas source molecular beam epitaxy |
| 002379 |
| New method for the growth of highly uniform quantum dots |
| 002380 |
| Multi-sheets In0.25Ga0.75As quantum dots grown by migration-enhanced epitaxy |
| 002385 |
| Liquid phase epitaxy growth of AlxGayIn1-x-yPzAs1-z/GaAs with direct band gap up to 2.0 eV |
| 002391 |
| InAs quantum dots in InAlAs matrix on (0 0 1)InP substrates grown by molecular beam epitaxy |
| 002393 |
| Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux |
| 002406 |
| Growth and doping characteristics of InGaN films grown by low pressure MOCVD |
| 002411 |
| Electroluminescence from triplet metal-ligand charge-transfer excited state of transition metal complexes |
| 002414 |
| Effects of growth interruption on self-assembled InAs/GaAs islands |
| 002424 |
| Annealing behavior of InAs/GaAs quantum dot structures |
| 002436 |
| The third subband population in modulation-doped InGaAs/InAlAs heterostructures |
| 002439 |
| Temperature dependence of photoluminescence spectra in InAs/GaAs quantum dot superlattices with large thicknesses |
| 002440 |
| Synthesis, structure, and optical properties of nanometer-sized In2O3 capped by anionic surfactant |
| 002441 |
| Molecular beam epitaxy growth of Iny2Al1-y2As/In0.73Ga0.27As/Iny1Al1-y1As/ InP P-HEMTs with enhancement conductivity using an intentional nonlattice-matched buffer layer |
| 002444 |
| Characterization of photoluminescence intensity and efficiency of free excitons in semiconductor quantum well structures |
| 002450 |
| Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperature |
| 002456 |
| The calculation and the photoluminescence characterization of energy levels in a strained GaAs/In0.2Ga0.8As/GaAs quantum well heterostructure for the application of light-emitting real-space transfer devices |
| 002462 |
| Gas source molecular beam epitaxy growth of high quality InGaAsP for 0.98 μm Al-free InGaAs/InGaAsP/InGaP laser diodes |
| 002464 |
| Comment on High-efficiency energy up-conversion at GaAs-GaInP2 interfaces [Appl. Phys. Lett. 67, 2813 (1995)] |
| 002470 |
| Photoluminescence of undoped bulk InP grown by the liquid-encapsulated vertical Bridgman technique |
| 002489 |
| Study on EL emission region of polymer thin film in PPV LED |
| 002490 |
| Study of GSMBE growth and characteristics of high-quality strained In0.63Ga0.37As/InP quantum wells |
| 002501 |
| MBE growth and characterization of high-quality GaInAsSb/AlGaAsSb strained multiple quantum well structures |
| 002502 |
| Low temperature photoluminescence properties of InGaN films grown on (0 1 1 2) Al203 and (0 0 0 1) Al203 substrates by low pressure movpe |
| 002506 |
| Investigation of dislocations and traps in MBE grown p-InGaAs/GaAs heterostructures |
| 002513 |
| GSMBE growth and characterization of InxGa1-xAs/InP strained-layer MQWs in a P-i-N Configuration |
| 002515 |
| Energy transfer process from polymer to rare earth complexes |
| 002528 |
| Bright blue electroluminescent devices utilizing poly(N-vinylcarbazole) doped with fluorescent dye |
| 002575 |
| Low-temperature photoluminescence of sulfur- and magnesium-doped InGaP epilayers grown by liquid-phase epitaxy |
| 002577 |
| Elimination of orientation domains and antiphase domains in the epitaxial films with chalcopyrite structure |
| 002579 |
| Compositional disordering of InGaAs/GaAs heterostructures by low-temperature-grown GaAs layers |
| 002581 |
| Photoluminescence studies of InAs/InGaAs/AlAs strained single quantum well structures |
| 002588 |
| The effect of III-V ratio at the substrate surface on the quality of InP grown by GSMBE |
| 002596 |
| Plasma polymerization for the deposition of an electroluminescent polymer layer |
| 002597 |
| Photoluminescence studies of CuInSe2 |
| 002598 |
| Photoluminescence enhancement of (NH4)2Sx passivated InP surface by rapid thermal annealing |
| 002602 |
| Optical properties of quaternary GaInAsSb/AlGaAsSb strained quantum wells |
| 002605 |
| Normal incident infrared absorption from InGaAs/GaAs quantum dot superlattice |
| 002617 |
| GSMBE growth and PL investigation of lattice-matched InGaAs/InP quantum wells |
| 002622 |
| Characterization of deep centers in AlGaAs/InGaAs/GaAs pseudomorphic HEMT structures grown the molecular beam epitaxy and hydrogen treatment |
| 002629 |
| Optical investigation of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells |
| 002633 |
| Critical layer thickness in metal organic chemical vapor deposition grown InGaAs/GaAs strained quantum wells |
| 002637 |
| Photoluminescence studies of single submonolayer InAs structures grown on GaAs (001) matrix |
| 002639 |
| Photoluminescence of ordered Ga0.5In0.5P grown by metalorganic vapor phase epitaxy |
| 002640 |
| Dependence of electron effective mass on alloy composition of InAlGaAs lattice matched to InP studied by optically detected cyclotron resonance |
| 002643 |
| Photoluminescence of three phonon replicas of the bound exciton in undoped InGaP prepared by liquid phase epitaxy |
| 002651 |
| Observation of excitonic polariton and broadening of room-temperature exciton in strained InGaAs/GaAs quantum wells |
| 002661 |
| Cyclotron-resonance studies in relaxed InxGa1-xAs (0≤x≤1) epilayers |
| 002670 |
| Luminescence of low-temperature GaAs in a GaAs/In0.2Ga0.8As multiple quantum well structure |
| 002686 |
| Photoluminescence study of highly mismatched In0.53Ga0.47As epilayers grown on InP-coated GaAs substrates |
| 002689 |
| Liquid-phase epitaxial growth and characterization of InGaAsP layers grown on GaAsP substrates for application to orange light-emitting diodes |
| 002695 |
| The near infrared photoluminescence of epitaxial Ga0.5In0.5P |
| 002704 |
| Photoluminescence studies of modulation-doped In0.60Ga0.40As/In0.52Al0.48As strained multiple quantum wells |
| 002711 |
| Influence of doped poly(N-vinylcarbazole) on poly(3-octylthiophene) electroluminescence |
| 002718 |
| Growth of GaxIn1-xAs1-ySby alloys by metalorganic chemical vapor deposition |
| 002726 |
| Critical layer thickness in MOCVD grown InGaAs-GaAs strained quantum wells |
| 002739 |
| Selective epitaxial growth of GaInP by low-pressure metal-organic chemical-vapor deposition using ethyldimethylindium as In source |
| 002752 |
| Influence of cap layer thickness on optical quality in In0.2Ga0.8As/GaAs single quantum wells |
| 002759 |
| The band gap of ''perfectly disordered'' Ga0.52In0.48P |
| 002762 |
| Mobility enhancement in double δ-doped GaAs/InxGa1-xAs/GaAs pseudomorphic structures by grading the heterointerfaces |
| 002765 |
| Photoluminescence studies of interstitial Zn in InP due to rapid thermal annealing |
| 002782 |
| The Fermi-edge singularity in CdTe/Cd1-xMnxTe:In multiple quantum wells |
| 002786 |
| Spectroscopic studies of the interaction of C60 and C70 films with metal substrates |
| 002787 |
| Pressure dependence of photoluminescence in InxGa1-xAs/AlyGai1-yAs strained quantum wells with different widths |
| 002789 |
| Optical studies of strained InGaAs/GaAs single quantum wells |
| 002796 |
| Influence of the cap layer thickness on photoluminescence properties in strained INGaAs/GaAs single quantum wells |
| 002797 |
| High-quality InGaP and InGaP/InAlP multiple quantum well grown by gas-source molecular beam epitaxy |
| 002811 |
| Very high purity InP layer grown by liquid-phase epitaxy using erbium gettering |
| 002815 |
| Temperature dependence of deep-level photoluminescence in Ga0.5In0.5P epilayers grown by metal-organic chemical vapour deposition |
| 002830 |
| Investigation of erbium doping of InGaAsP layers grown by liquid-phase epitaxy |
| 002838 |
| Correlation between deep-level photoluminescence and ordered structure in Ga0.5In0.5OP epilayers |
| 002849 |
| The effects of growth pressure and substrate temperature upon InxGa1-xSb epilayer quality grown by MOCVD |
| 002851 |
| Temperature modulated photoluminescence in semiconductor quantum wells |
| 002858 |
| Photoluminescence study of rapid thermal annealing from nitrogen-implanted In0.32Ga0.68P |
| 002859 |
| Photoluminescence studies of InxGa1-xAs/GaAs strained quantum wells under hydrostatic pressure |
| 002863 |
| Metalorganic chemical vapor deposition growth of Ga0.5In0.5P ordered alloys by phosphine modulation |
| 002877 |
| Effect of substrate misorientation on the optical properties and hole concentration of Ga0.5In0.5P and (Al0.5Ga0.5)0.5In0.5P grown by low pressure metalorganic vapor phase epitaxy |
| 002879 |
| Effect of oxygen concentration on the photoluminescence spectrum on CDiN2O4 films |
| 002884 |
| Deep levels in GalnP2 grown by metal-organic chemical vapour deposition |
| 002889 |
| A study of resonant Raman scattering in GaInAs/AlInAs multiple quantum wells |
| 002895 |
| Tellurium and zinc doping in In0.32Ga0.68P layers grown by liquid-phase epitaxy |
| 002907 |
| Influences of alloy disorder and interface roughness on optical spectra of InGaAs/GaAs strained-layer quantum wells |
| 002920 |
| Pressure dependence of photoluminescence in Inx Ga1-xAs/GaAs strained quantum wells |
| 002922 |
| Photoluminescence study of Si+- and Si+ + P+-implanted InP |
| 002923 |
| Photoluminescence excitation spectroscopy of InxGa1-xAs/GaAs strained-layer coupled double quantum wells |
| 002928 |
| Influence of indium doping on AIGaAs layers grown by molecular beam epitaxy |
| 002944 |
| Photoluminescence of the residual shallow acceptor in InxGa1-xAs grown on GaAs(001) by molecular beam epitaxy |
| 002947 |
| Improved activation in Si+ and P+ dually implanted InP |
