Serveur d'exploration sur l'Indium

Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.

Performance And NotZHONG ZHI YOU

List of bibliographic references

Number of relevant bibliographic references: 60.
Ident.Authors (with country if any)Title
000029 Fabrication of In2O3@In2S3 core-shell nanocubes for enhanced photoelectrochemical performance
000072 Theoretical simulations of InGaN/Si mechanically stacked two-junction solar cell
000145 Plastic dye-sensitized solar cells with enhanced performance prepared from a printable TiO2 paste
000215 InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit
000488 Influences of the thickness of self-assembled graphene multilayer films on the supercapacitive performance
000549 Enhanced brightness of organic light-emitting diodes based on Mg:Ag cathode using alkali metal chlorides as an electron injection layer
000665 Theoretical study on InxGa1-xN/GaN quantum dots solar cell
000674 The enhanced performance of organic light-emitting diodes by using PCBM as the anode modification layer
000789 Low temperature preparation of a high performance Pt/SWCNT counter electrode for flexible dye-sensitized solar cells
000977 Which is better as a buffer layer for organic light-emitting devices, CsF or LiF?
000A62 Preparation of ZnIn2S4/fluoropolymer fiber composites and its photocatalytic H2 evolution from splitting of water using Xe lamp irradiation
000A97 Low-temperature fabrication of flexible TiO2 electrode for dye-sensitized solar cells
000B54 Fabrication of high performance Pt counter electrodes on conductive plastic substrate for flexible dye-sensitized solar cells
000B61 Evaluating 0.53 eV GaInAsSb thermophotovoltaic diode based on an analytical absorption model
000C02 Effect of an Ultra-thin Molybdenum Trioxide Layer and Illumination Intensity on the Performance of Organic Photovoltaic Devices
000C77 Theoretical study on InxGa1-xN/S hetero-junction solar cells
000C92 The application of SnS nanoparticles to bulk heterojunction solar cells
000D35 Stability of TCO Window Layers for Thin-Film CIGS Solar Cells upon Damp Heat Exposures - Part II
000D63 Preparation and electrochemical properties of indium- and sulfur-doped LiMnO2 with orthorhombic structure as cathode materials
000E30 Indium as an ideal functional dopant for a proton-conducting solid oxide fuel cell
000E39 Hybrid inverted organic photovoltaic cells based on nanoporous TiO2 films and organic small molecules
000E72 Fabrication of organic photovoltaic cells with double-layer ZnO structure
000E97 Effects of substrate temperature on the structural and electrical properties of Cu(In,Ga)Se2 thin films
000F80 White electrophosphorescent devices based on tricolour emissive layers
000F96 Theoretical design and performance of InxGa1-xN two-junction solar cells
001104 Layer-by-layer self-assembly of manganese oxide nanosheets/polyethylenimine multilayer films as electrodes for supercapacitors
001149 Fabrication and electrochemical characterization of cobalt-based layered double hydroxide nanosheet thin-film electrodes
001200 Degradation behaviors of electrical properties of GaInP/GaAs/Ge solar cells under <200 keV proton irradiation
001261 The photoluminescent and electroluminescent properties of a new Europium complex
001270 The effect of C60 doping on the electroluminescent performance of organic light-emitting devices
001308 Simulation of In0.65Ga0.35 N single-junction solar cell
001327 Photophysics and morphology investigation based on perylenetetracarboxylate/polymer photovoltaic devices
001362 Luminescence degradation of InGaN/GaN violet LEDs
001407 Enhanced photoelectrocatalytic performance of Zn-doped WO3 photocatalysts for nitrite ions degradation under visible light
001408 Enhanced performance by inserting ultrathin SiO2 layer in organic light-emitting devices
001422 Electroluminescent devices based on rare-earth complex TbY(p-MBA)6(phen)2
001525 Synthesis, characterization, photophysics and electroluminescence based on a series of pyran-containing emitters
001565 Polythiophene/fullerene bulk heterojunction solar cell fabricated via electrochemical co-deposition
001586 Novel fluorine-containing X-branched oligophenylenes : structure-hole blocking property relationships
001625 Formation and performances of porous InVO4 films
001630 Fabrication of Cu(In,Ga)Se2 thin films solar cell by selenization process with Se vapor
001649 Efficient and stable single-dopant white OLEDs based on 9,10-bis (2-naphthyl) anthracene
001652 Effects of resistivity of a p-Si chip on the light-emitting efficiency of a top-emission organic light-emitting diode with the p-Si chip as the anode
001660 Double-source approach to In2S3 single crystallites and their electrochemical properties
001664 Dipole mode photonic crystal point defect laser on InGaAsP/InP
001710 The effect of hydrothermal growth temperature on preparation and photoelectrochemical performance of ZnO nanorod array films
001769 Organic electroluminescent derivatives containing dibenzothiophene and diarylamine segments
001786 Investigation on the performances of multi-quantum barriers in a single quantum well solar cell : Photovoltaic materials and phenoma
001787 Investigation into the effect of LiF at the organic interface on electroluminescence
001796 Indium tin oxide surface treatments for improvement of organic light-emitting diode performance
001801 Improved performance of OLEDs with ITO surface treatments
001860 A simple and rapid method for preparing indium nanoparticles from bulk indium via ultrasound irradiation
001974 Optimization of InGaAsP-InP tensile strained multiple quantum-well structures emitting at 1.34 μm
001982 Modification of the electrodes of organic light-emitting devices using the SnO2 ultrathin layer
001C05 Field-aided collection in GaInP2 top solar cells
001D33 Study of P-on-N GaINP2/GaAs tandem cells
002532 Application of annular centrifugal contactor on separating indium from iron
002673 Performance enhancement in a metal-insulator-semiconductor-like pseudomorphic transistor by utilizing an n--GaAs/n+-In0.2Ga0.8As two-layer structure
002688 A new InP-based heterojunction bipolar transistor utilizing an In0.53Al0.22Ga0.25As base
002845 n-AlGaAs/InGaAs/n-GaAs double-modulation doped pseudomorphic HMET with MIS structure

Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024