Ident. | Authors (with country if any) | Title |
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000029 |
| Fabrication of In2O3@In2S3 core-shell nanocubes for enhanced photoelectrochemical performance |
000072 |
| Theoretical simulations of InGaN/Si mechanically stacked two-junction solar cell |
000145 |
| Plastic dye-sensitized solar cells with enhanced performance prepared from a printable TiO2 paste |
000215 |
| InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit |
000488 |
| Influences of the thickness of self-assembled graphene multilayer films on the supercapacitive performance |
000549 |
| Enhanced brightness of organic light-emitting diodes based on Mg:Ag cathode using alkali metal chlorides as an electron injection layer |
000665 |
| Theoretical study on InxGa1-xN/GaN quantum dots solar cell |
000674 |
| The enhanced performance of organic light-emitting diodes by using PCBM as the anode modification layer |
000789 |
| Low temperature preparation of a high performance Pt/SWCNT counter electrode for flexible dye-sensitized solar cells |
000977 |
| Which is better as a buffer layer for organic light-emitting devices, CsF or LiF? |
000A62 |
| Preparation of ZnIn2S4/fluoropolymer fiber composites and its photocatalytic H2 evolution from splitting of water using Xe lamp irradiation |
000A97 |
| Low-temperature fabrication of flexible TiO2 electrode for dye-sensitized solar cells |
000B54 |
| Fabrication of high performance Pt counter electrodes on conductive plastic substrate for flexible dye-sensitized solar cells |
000B61 |
| Evaluating 0.53 eV GaInAsSb thermophotovoltaic diode based on an analytical absorption model |
000C02 |
| Effect of an Ultra-thin Molybdenum Trioxide Layer and Illumination Intensity on the Performance of Organic Photovoltaic Devices |
000C77 |
| Theoretical study on InxGa1-xN/S hetero-junction solar cells |
000C92 |
| The application of SnS nanoparticles to bulk heterojunction solar cells |
000D35 |
| Stability of TCO Window Layers for Thin-Film CIGS Solar Cells upon Damp Heat Exposures - Part II |
000D63 |
| Preparation and electrochemical properties of indium- and sulfur-doped LiMnO2 with orthorhombic structure as cathode materials |
000E30 |
| Indium as an ideal functional dopant for a proton-conducting solid oxide fuel cell |
000E39 |
| Hybrid inverted organic photovoltaic cells based on nanoporous TiO2 films and organic small molecules |
000E72 |
| Fabrication of organic photovoltaic cells with double-layer ZnO structure |
000E97 |
| Effects of substrate temperature on the structural and electrical properties of Cu(In,Ga)Se2 thin films |
000F80 |
| White electrophosphorescent devices based on tricolour emissive layers |
000F96 |
| Theoretical design and performance of InxGa1-xN two-junction solar cells |
001104 |
| Layer-by-layer self-assembly of manganese oxide nanosheets/polyethylenimine multilayer films as electrodes for supercapacitors |
001149 |
| Fabrication and electrochemical characterization of cobalt-based layered double hydroxide nanosheet thin-film electrodes |
001200 |
| Degradation behaviors of electrical properties of GaInP/GaAs/Ge solar cells under <200 keV proton irradiation |
001261 |
| The photoluminescent and electroluminescent properties of a new Europium complex |
001270 |
| The effect of C60 doping on the electroluminescent performance of organic light-emitting devices |
001308 |
| Simulation of In0.65Ga0.35 N single-junction solar cell |
001327 |
| Photophysics and morphology investigation based on perylenetetracarboxylate/polymer photovoltaic devices |
001362 |
| Luminescence degradation of InGaN/GaN violet LEDs |
001407 |
| Enhanced photoelectrocatalytic performance of Zn-doped WO3 photocatalysts for nitrite ions degradation under visible light |
001408 |
| Enhanced performance by inserting ultrathin SiO2 layer in organic light-emitting devices |
001422 |
| Electroluminescent devices based on rare-earth complex TbY(p-MBA)6(phen)2 |
001525 |
| Synthesis, characterization, photophysics and electroluminescence based on a series of pyran-containing emitters |
001565 |
| Polythiophene/fullerene bulk heterojunction solar cell fabricated via electrochemical co-deposition |
001586 |
| Novel fluorine-containing X-branched oligophenylenes : structure-hole blocking property relationships |
001625 |
| Formation and performances of porous InVO4 films |
001630 |
| Fabrication of Cu(In,Ga)Se2 thin films solar cell by selenization process with Se vapor |
001649 |
| Efficient and stable single-dopant white OLEDs based on 9,10-bis (2-naphthyl) anthracene |
001652 |
| Effects of resistivity of a p-Si chip on the light-emitting efficiency of a top-emission organic light-emitting diode with the p-Si chip as the anode |
001660 |
| Double-source approach to In2S3 single crystallites and their electrochemical properties |
001664 |
| Dipole mode photonic crystal point defect laser on InGaAsP/InP |
001710 |
| The effect of hydrothermal growth temperature on preparation and photoelectrochemical performance of ZnO nanorod array films |
001769 |
| Organic electroluminescent derivatives containing dibenzothiophene and diarylamine segments |
001786 |
| Investigation on the performances of multi-quantum barriers in a single quantum well solar cell : Photovoltaic materials and phenoma |
001787 |
| Investigation into the effect of LiF at the organic interface on electroluminescence |
001796 |
| Indium tin oxide surface treatments for improvement of organic light-emitting diode performance |
001801 |
| Improved performance of OLEDs with ITO surface treatments |
001860 |
| A simple and rapid method for preparing indium nanoparticles from bulk indium via ultrasound irradiation |
001974 |
| Optimization of InGaAsP-InP tensile strained multiple quantum-well structures emitting at 1.34 μm |
001982 |
| Modification of the electrodes of organic light-emitting devices using the SnO2 ultrathin layer |
001C05 |
| Field-aided collection in GaInP2 top solar cells |
001D33 |
| Study of P-on-N GaINP2/GaAs tandem cells |
002532 |
| Application of annular centrifugal contactor on separating indium from iron |
002673 |
| Performance enhancement in a metal-insulator-semiconductor-like pseudomorphic transistor by utilizing an n--GaAs/n+-In0.2Ga0.8As two-layer structure |
002688 |
| A new InP-based heterojunction bipolar transistor utilizing an In0.53Al0.22Ga0.25As base |
002845 |
| n-AlGaAs/InGaAs/n-GaAs double-modulation doped pseudomorphic HMET with MIS structure |