| Ident. | Authors (with country if any) | Title |
|---|
| 000024 |
| Improved performance of lateral GaN-based light emitting diodes with novel buried CBL structure in ITO film and reflective electrodes |
| 000073 |
| Theoretical analysis of the inter-diffusion coefficients in the AlGaInP material quantum well intermixing |
| 000195 |
| Investigation of blue InGaN light-emitting diodes with p-AlGaN/InGaN superlattice interlayer |
| 000263 |
| Enhanced output power of (indium) gallium nitride light emitting diodes by a transparent current spreading-film composed of a disordered network of indium tin oxide nanorods |
| 000273 |
| Efficiency droop improvement for InGaN-based light-emitting diodes with gradually increased In-composition across the active region |
| 000500 |
| Improving Light Output of Vertical-Stand-Type InGaN Light-Emitting Diodes Grown on a Free-Standing GaN Substrate With Self-Assembled Conical Arrays |
| 000730 |
| Quantum dot lasers grown by gas source molecular-beam epitaxy |
| 000740 |
| Preparation and properties of Ni/InGaN/GaN Schottky barrier photovoltaic cells |
| 000815 |
| InGaAs/GaAs saturable absorber for diode-pumped passively Q-switched mode-locking of Tm,Ho:YVO4 laser |
| 000831 |
| High-power 1.25 μm InAs QD VECSEL based on resonant periodic gain structure |
| 000B15 |
| Intracavity Second Harmonic Generation Characteristics of Semiconductor Disk Laser |
| 000B28 |
| Improved light extraction of GaN-based light-emitting diodes by ITO patterning with optimization design |
| 000B55 |
| Fabrication of blue and green non-polar InGaN/GaN multiple quantum well light-emitting diodes on LiAIO2(100) substrates |
| 000E24 |
| Influence of a p-InGaN/GaN short-period superlattice on the performance of GaN-based light-emitting diodes |
| 000E41 |
| High-Power Passively Q-Switched Mode-Locking Nd:GdVO4 Laser with LT-InGaAs Saturable Absorber |
| 000E43 |
| High efficiency passively Q-switched mode-locking Nd:GdV04 laser with LT-In0.25Ga0.75As saturable absorber |
| 000E75 |
| Fabrication and modulation characteristics of 1.3 μm p-doped InAs quantum dot vertical cavity surface emitting lasers |
| 000E77 |
| Fabrication and Characterization of 1.3-μm InAs Quantum-Dot VCSELs and Monolithic VCSEL Arrays |
| 000F18 |
| Diode-pumped passively mode-locked Nd:LuVO4 laser with LT-In0.25Ga0.75As saturable absorber |
| 000F77 |
| 1.3-μm InAs Quantum Dot Vertical Cavity Surface Emitting Lasers with Planar Electrodes Configuration |
| 001122 |
| Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching |
| 001134 |
| High Power 1064nm Laser Diode Array and Measuring Chip Temperature Based on Emitting Spectra |
| 001154 |
| Enhancement of the light output of GaN-based light-emitting diodes using surface-textured indium-tin-oxide transparent ohmic contacts |
| 001210 |
| Common-base multi-finger submicron InGaAs/InP double heterojunction bipolar transistor with fmax of 305 GHz |
| 001252 |
| Unselective regrowth buried heterostructure long-wavelength superluminescent diode realized with MOVPE |
| 001362 |
| Luminescence degradation of InGaN/GaN violet LEDs |
| 001363 |
| Long-wavelength VCSELs for optical networks and trace-gas monitoring |
| 001376 |
| Improvement in performance of GaN-based light-emitting diodes with indium tin oxide based transparent ohmic contacts |
| 001385 |
| High-power InGaAs VCSEL's single devices and 2-D arrays |
| 001410 |
| Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction |
| 001806 |
| High-volume production of 650nm GaInP/AlGaInP laser diodes |
| 001809 |
| High power output and temperature characteristics of 1.06μm diode array module |
| 001835 |
| Dual wavelength 650-780nm laser diodes |
| 001869 |
| 980 nm high power strained quantum well lasers array fabricated by MBE |
| 001870 |
| 980 nm QCW high power semiconductor lasers array |
| 001988 |
| MOVPE growth and fabrication of 1.3 μm high power InGaAsP-InP polarization-insensitive superluminescent diodes with complex strained quantum wells |
| 001A05 |
| High-power vertical cavity surface emitting laser with good performances |
| 001A49 |
| A high power InGaAs/GaAsP vertical-cavity surface-emitting laser and its temperature characteristics |
| 001D73 |
| Fabrication of high-brightness blue InGaN/GaN MQW LEDs |
| 001E87 |
| Temperature and injection current dependencies of 2 μm InGaAsSb/AlGaAsSb multiple quantum-well ridge-waveguide lasers |
| 001F09 |
| Quasi RT-CW operation of InGaAs/InGaAsP strained quantum well lasers |
| 001F66 |
| Characteristics of strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE |
| 001F72 |
| Analysis of semiconductor microlasers with an equilateral triangle resonator by rate equations |
| 002094 |
| InGaAsP/GaAs SCH SQW laser arrays grown by LPE |
| 002100 |
| High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers |
| 002147 |
| 1.3 μm integrated superluminescent light source |
| 002243 |
| Room temperature continuous wave visible vertical cavity surface emitting laser |
| 002271 |
| High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by metal-organic chemical vapor deposition |
