| Ident. | Authors (with country if any) | Title |
|---|
| 000913 |
| Ease of control and switching between ordered free-standing arrays of ZnO nanotubes and nanorods on conductive transparent substrates |
| 000D26 |
| Structure and photovoltaic characteristics of CuInSe2 thin films prepared by pulse-reverse electrodeposition and selenization process |
| 000E21 |
| Investigation of microstructuring CuInGaSe2 thin films with ultrashort laser pulses |
| 001B60 |
| Piezoelectric coefficient of InN thin films prepared by magnetron sputtering |
| 001B74 |
| Nanocrystal size control by bath temperature in electrodeposited CdSe thin films |
| 001B88 |
| Influence of the preparation conditions on the properties of CuInS2 films deposited by one-stage RF reactive sputtering |
| 001B94 |
| Hydrothermal synthesis and characterization of AgInSe2 nanorods |
| 001B98 |
| Growth temperature effect on the optical and material properties of AlxInxGa1-x-yN epilayers grown by MOCVD |
| 001B99 |
| Growth of nanoscale InGaN self-assembled quantum dots |
| 001C18 |
| Effects of TMIn flow rate of barrier layer on the optical and structural properties of InxGa1-xN/InyGa1-yN multiple quantum wells |
| 001D38 |
| Self-assembled large-scale and cylindrical CuInSe2 quantum dots on indium tin oxide films |
| 001D42 |
| Quasi-thermodynamic analysis of MOVPE growth of GaxAlyIn1-x-yN |
| 001E98 |
| Studying the mechanism of ordered growth of InAs quantum dots on GaAs/InP |
| 001F10 |
| Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy |
| 001F31 |
| Influence of growth conditions on self-assembled InAs nanostructures grown on (001)InP substrate by molecular beam epitaxy |
| 001F58 |
| Effect of pH on the electrochemical deposition of cadmium selenide nanocrystal films |
| 002047 |
| Two-step method to grow InAs epilayer on GaAs substrate using a new prelayer |
| 002214 |
| Uniformity enhancement of the self-organized InAs quantum dots |
| 002245 |
| RHEED characterization of InAs/GaAs grown by MBE |
| 002414 |
| Effects of growth interruption on self-assembled InAs/GaAs islands |
| 002501 |
| MBE growth and characterization of high-quality GaInAsSb/AlGaAsSb strained multiple quantum well structures |
| 002588 |
| The effect of III-V ratio at the substrate surface on the quality of InP grown by GSMBE |
| 002601 |
| Optimization of the deposition process parameters for preparation of In2O3 films by reactive evaporation of indium metal |
| 002709 |
| Metalorganic chemical vapor deposition of GaxIn1-xSb ternary alloys |
| 002716 |
| Growth of GaInAsSb alloys by metalorganic chemical vapor deposition |
| 002827 |
| Molecular beam epitaxy growth of InAs-AlSb-GaSb interband tunneling diodes |
