| Ident. | Authors (with country if any) | Title |
|---|
| 000080 |
| The effect of secondary electrons on emission |
| 000325 |
| An optimized In-CuGa metallic precursors for chalcopyrite thin films |
| 000336 |
| A novel dimesitylboron-substituted indolo[3,2-b]carbazole derivative: Synthesis, electrochemical, photoluminescent and electroluminescent properties |
| 000506 |
| Highly flexible transparent and conductive ZnS/Ag/ZnS multilayer films prepared by ion beam assisted deposition |
| 000555 |
| Electrochromic Poly(DNTD)/WO3 Nanocomposite Films via Electorpolymerization |
| 000726 |
| Red electroluminescence of diamond thin films |
| 000745 |
| Polarized GaN-based light-emitting diode with an embedded metallic/dielectric subwavelength grating |
| 000770 |
| Optical and electrical properties of zinc oxide/indium/zinc oxide multilayer structures |
| 000771 |
| One-step synthesis and stabilization of gold nanoparticles and multilayer film assembly |
| 000946 |
| Analysis and research on the thermal stress of detector affected by packaging accuracy |
| 000957 |
| Advanced light trapping materials: Double layer ZnO:B based transparent conductive oxide |
| 000A07 |
| Temperature dependence of magnetoresistance in Co/ITO multilayers |
| 000A73 |
| Photo/electroluminescence properties of an europium (III) complex doped in 4,4'-N, N'-dicarbazole-biphenyl matrix |
| 000D79 |
| Photo-and electro-luminescent properties of 5,10,15,20-tetra-p-tolyl-21H,23H-porphine doped poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene] films |
| 000E01 |
| Multicolor electrochromic ultrathin films based on neutral red and polyoxometalate |
| 000E47 |
| Growth of One-Dimensional Hierarchical Multilayered Indium Nanostructures |
| 000E55 |
| Giant magnetoresistance of Co/ITO multilayers |
| 001099 |
| Magnetic property and magnetoresistance in Fe/ITO multilayers |
| 001139 |
| Giant magnetoresistance in Fe/In multilayers and its anomalous temperature dependence |
| 001213 |
| Characterization of multilayered HgCdTe for MW/LW two-color application |
| 001349 |
| Nanocomposite multilayer films containing Dawson-type polyoxometalate and cationic phthalocyanine : Fabrication, characterization and bifunctional electrocatalytic properties |
| 001480 |
| Bright-yellow molecular organic light-emitting diodes based on two novel silole derivatives |
| 001782 |
| Luminescence properties of multi-layer InGaN quantum dots grown on C- and R-plane sapphire substrates |
| 001815 |
| GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures |
| 001821 |
| Enhancement of electroplex emission by using multi-layer device structure |
| 001922 |
| Transport properties of InAs epilayers grown on GaAs substrates by using the prelayer technique |
| 001952 |
| Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition |
| 001A19 |
| Electrochromic ultra-thin films based on cerium polyoxometalate |
| 001B23 |
| Void formation and failure in InGaN/AlGaN double heterostructures |
| 001B43 |
| Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method |
| 001B45 |
| Structure and optical properties of upper In(Ga)As quantum dots on a different seed layer with a thin GaAs spacer layer |
| 001B71 |
| Ohmic contact and interfacial reaction of Ti/Al/Pt/Au metallic multi-layers on n-AlxGa1-xN/GaN heterostructures |
| 001C18 |
| Effects of TMIn flow rate of barrier layer on the optical and structural properties of InxGa1-xN/InyGa1-yN multiple quantum wells |
| 001D18 |
| The structure and current-voltage characteristics of multi-sheet InGaN quantum dots grown by a new multi-step method |
| 001D34 |
| Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer |
| 001D63 |
| InAsyP1-y/InP quantum wells grown by solid source molecular beam epitaxy using As2 and As4 |
| 001D85 |
| Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots |
| 001D88 |
| Dependence of optical properties on the structure of multi-layer self-organized InAs quantum dots emitting near 1.3 μm |
| 001E40 |
| Phases of the Initialized AgInSbTe Phase Change Optical Recording Films |
| 001F10 |
| Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy |
| 001F22 |
| Multiple quantum wells and laser structures containing InAs quantum dots grown by molecular-beam epitaxy |
| 001F27 |
| MBE grown 2.0 μm InGaAsSb/AlGaAsSb MQW ridge waveguide laser diodes |
| 001F75 |
| Alternate heteroepitaxial growth of chloroindium phthalocyanine and chloroaluminum phthalocyanine ultrathin multilayered structure and its xerographic and optical properties |
| 002053 |
| The structural and photoluminescence properties of self-organized quantum dots in InAs/In0.53 Ga0.47 As multilayer on InP substrate |
| 002067 |
| Self-ordering of quasi-quantum wire in InAlAs/AlGaAs multilayer nanostructure and its optical anisotropy |
| 002068 |
| Self-assembled InAs quantum wires on InP(001) |
| 002072 |
| Relaxation mechanism of GaP/InGaAlP/GaAs heterostructure |
| 002115 |
| Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice |
| 002125 |
| Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots |
| 002214 |
| Uniformity enhancement of the self-organized InAs quantum dots |
| 002235 |
| Structural and infrared absorption properties of self-organized InGaAs/GaAs quantum dots multilayers : Special issue papers on quantum dots |
| 002241 |
| Self-organization of the InGaAs/GaAs quantum dots superlattice |
| 002274 |
| Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(100) and high index substrates by molecular beam epitaxy |
| 002380 |
| Multi-sheets In0.25Ga0.75As quantum dots grown by migration-enhanced epitaxy |
| 002490 |
| Study of GSMBE growth and characteristics of high-quality strained In0.63Ga0.37As/InP quantum wells |
| 002501 |
| MBE growth and characterization of high-quality GaInAsSb/AlGaAsSb strained multiple quantum well structures |
| 002508 |
| Initial interface reaction in indium/amorphous selenium multilayer thin films |
| 002513 |
| GSMBE growth and characterization of InxGa1-xAs/InP strained-layer MQWs in a P-i-N Configuration |
| 002518 |
| Electroluminescence from ITO/SiO2/Ta2O5/Al multiple-layer structure excited by hot electrons |
| 002573 |
| Transient photovoltaic properties in Al/tin-phthalocyanine/indium-tin-oxide sandwich cell |
| 002599 |
| Parametric study on lattice-matched and pseudomorphic InGaAs/InAlAs/InP modulation-doped heterostructures grown by GSMBE |
| 002797 |
| High-quality InGaP and InGaP/InAlP multiple quantum well grown by gas-source molecular beam epitaxy |
