| Ident. | Authors (with country if any) | Title |
|---|
| 000020 |
| Interface layer control and optimization of InAs/GaSb type-II superlattices grown by molecular beam epitaxy |
| 000075 |
| The investigation of GaInP solar cell grown by all-solid MBE |
| 000078 |
| The effects of injector doping densities on lasing properties of InP-based quantum cascade lasers at 4.3 μm |
| 000209 |
| Influence of GaAs(0 01 ) pregrowth surface morphology and reconstruction on the growth of InGaAs layers |
| 000213 |
| InP/InGaAs/InP DHBT structures with high carbon-doped base grown by gas source molecular beam epitaxy |
| 000217 |
| InAs/GaSb type-II superlattice mid-wavelength infrared focal plane array detectors grown by molecular beam epitaxy |
| 000242 |
| Growth of metamorphic InGaP layers on GaAs substrates |
| 000269 |
| Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy |
| 000274 |
| Effects of growth temperature and buffer scheme on characteristics of InP-based metamorphic InGaAs photodetectors |
| 000423 |
| Self-Assembled InGaAs Quantum Dot Clusters with Controlled Spatial and Spectral Properties |
| 000454 |
| Ordered versus random nucleation of InN islands grown by molecular beam epitaxy |
| 000463 |
| Morphology and shape dependent characteristics of InAs/InP(100) quantum dot laser grown by gas source molecular beam epitaxy |
| 000652 |
| Unusual resistive switching induced by voltage in La0.7Sr0.3MnO3 thin films |
| 000703 |
| Study of molecular-beam epitaxy growth on patterned GaAs ( 1 0 0) substrates by masked indium ion implantation |
| 000710 |
| Strain accumulation in InAs/InxGai1-xAs quantum dots |
| 000711 |
| Strain accumulation in InAs/InxGa1-xAs quantum dots |
| 000729 |
| Raman scattering and Rutherford backscattering studies on InN films grown by plasma-assisted molecular beam epitaxy |
| 000730 |
| Quantum dot lasers grown by gas source molecular-beam epitaxy |
| 000758 |
| Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy |
| 000811 |
| InP/InGaAs/InP DHBT structures with graded composition base grown by gas source molecular beam epitaxy |
| 000850 |
| GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy |
| 000868 |
| Enhanced optical properties of InAs/GaAs quantum dots grown by radio-frequency hydrogen plasma-assisted molecular beam epitaxy |
| 000908 |
| Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy |
| 000991 |
| The refractive nonlinearities of InAs/GaAs quantum dots above-bandgap energy |
| 000998 |
| The effects of growth parameters on the RF-MBE growth of dilute InNSb films |
| 000A51 |
| SELF-ASSEMBLING OF INAS QUANTUM DOTS ON GAAS(001) IN MOLECULAR BEAM EPITAXY |
| 000A55 |
| Recent advances and challenges for successfu p-type control of InN films with Mg acceptor doping by molecular beam epitaxy |
| 000A56 |
| Rapid growth and characterization of InN nanocolumns on InGaN buffer layers at a low ratio of N/In |
| 000B26 |
| InAs/GaAs quantum dot lasers grown by gas-source molecular-beam epitaxy |
| 000B60 |
| Evaluation of the In concentration of an InxGa1-xSb alloy layer in cross-sectional HRTEM images of III-V semiconductor superlattices |
| 000B75 |
| Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films |
| 000C12 |
| Design for new structure InAs/InxGa1-xSb superlattice two-color-short and long wavelength infrared photodetector |
| 000C31 |
| An improvement on short-wavelength photoresponse for a heterostructure HgCdTe two-color infrared detector |
| 000D39 |
| Solid source MBE growth of quantum cascade lasers |
| 000D45 |
| Room Temperature Ferromagnetism in Cobalt-Doped LiNbO3 Single Crystalline Films |
| 000D53 |
| Quantum rings formed in InAs QDs annealing process |
| 000D67 |
| Precise growth control and characterization of strained AlInAs and GaInAs for quantum cascade lasers by GSMBE |
| 000D81 |
| Performance of gas source MBE-grown wavelength-extended InGaAs photodetectors with different buffer structures |
| 000D84 |
| Optimization of AlInGaAs/InGaAs/InAs strain compensated triangular quantum wells grown by gas source molecular beam epitaxy for laser applications in 2.1-2.4 μm range |
| 000E08 |
| Metamorphic InGaAs telecom lasers on GaAs |
| 000E34 |
| InGaN nanorod arrays grown by molecular beam epitaxy : Growth mechanism structural and optical properties |
| 000E48 |
| Growth of InAs/GaSb type-II superlattices by gas-source molecular-beam epitaxy |
| 000E52 |
| Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method |
| 000F07 |
| Effect of annealing on electrical properties of InAsSb films grown on GaAs substrates by molecular beam epitaxy |
| 000F58 |
| Alloy phase separation in InAs/InAlAs/InP nanostructure superlattices studied by finite element calculation |
| 001009 |
| Temperature dependence of surface quantum dots grown under frequent growth interruption |
| 001010 |
| Temperature dependence of PL spectrum in researching InGaAs/GaAs single quantum well |
| 001034 |
| Strain relaxation and surface morphology of high indium content InAlAs metamorphic buffers with reverse step |
| 001070 |
| Performance Analysis of 256 Element Linear 2.4μm InGaAs Photovoltaic Detector Arrays |
| 001078 |
| Optical transitions of InAs/In0.36Ga0.64As/GaAs(311B) surface quantum dots clearly identified by the piezoreflectance technique |
| 001079 |
| Optical properties of InAs/In0.15Ga0.85As quantum dots-in-a-well studied by piezomodulated reflectance spectroscopy |
| 001174 |
| Electrical properties of InGaN grown by molecular beam epitaxy |
| 001213 |
| Characterization of multilayered HgCdTe for MW/LW two-color application |
| 001266 |
| The growth of high-Al-content InAlGaN quaternary alloys by RF-MBE |
| 001290 |
| Surface morphology of highly mismatched insb films grown on GaAs substrates by molecular beam epitaxy |
| 001356 |
| Microscopic origin of electrical compensation in arsenic-doped HgCdTe by molecular beam epitaxy : Density functional study |
| 001358 |
| Metamorphic growth of 1.25-1.29 μm InGaAs quantum well lasers on GaAs by molecular beam epitaxy |
| 001360 |
| MBE growth of very short period InAs/GaSb type-II superlattices on (0 0 1)GaAs substrates |
| 001368 |
| Key issues associated with low threshold current density for InP-based quantum cascade lasers |
| 001388 |
| Heavily carbon-doped p-type InGaAs grown by gas source molecular beam epitaxy for application to heterojunction bipolar transistors |
| 001397 |
| Fabrication of ultra-low density and long-wavelength emission InAs quantum dots |
| 001479 |
| Buffer influence on AlSb/InAs/AlSb quantum wells |
| 001507 |
| Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots |
| 001514 |
| The uniformity of InGaAs in InP/InGaAs/InP by microwave photoconductivity decay (μ-PCD) carrier lifetime measurement |
| 001518 |
| The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 μm wavelength GaInNAs/GaAs quantum well with high indium content |
| 001522 |
| Temperature dependence of surface quantum dots grown under frequent growth interruption |
| 001539 |
| Study of nucleation positions of InAs islands on stripe-patterned GaAs (100) substrate |
| 001579 |
| Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness |
| 001580 |
| Optical properties of InN films grown by molecular beam epitaxy at different conditions |
| 001581 |
| Optical properties of InGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy |
| 001582 |
| Optical and local current studies on InAs/GaAs quantum dots |
| 001594 |
| MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting |
| 001598 |
| Kinetic Monte Carlo simulation of spatially ordered growth of quantum dots on patterned substrate |
| 001603 |
| Influence of dislocation stress field on distribution of quantum dots |
| 001622 |
| Growth of In2O3 single-crystalline film on sapphire (0001) substrate by molecular beam epitaxy |
| 001624 |
| Gas source MBE grown wavelength extended 2.2 and 2.5 μm InGaAs PIN photodetectors |
| 001648 |
| Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy |
| 001684 |
| Band gap blue shift of InGaAs/InP multiple quantum wells by different dielectric film coating and annealing |
| 001709 |
| The effect of the AlxGa1-xN/AIN buffer layer on the properties of GaN/Si(111) film grown by NH3-MBE |
| 001711 |
| The effect of a combined InAlAs and GaAs strained buffer layer on the structure and optical property of InAs quantum dots |
| 001713 |
| The effect of In content on high-density InxGa1-xAs quantum dots |
| 001734 |
| Structural and optical properties of InAs/In0.52Al0.48As self-assembled quantum wires on InP(001) |
| 001735 |
| Structural and optical properties of InAs/GaAs quantum dots emitting at 1.5μm |
| 001747 |
| Room temperature 1.25 μm emission from high indium content InxGa1-xAs/GaAs quantum wells grown by molecular beam epitaxy |
| 001770 |
| Optical properties of digital-alloy In0.49(Ga1-zAlz)0.51P/GaAs and InGaP/In0.49(Ga1-zAlz)0.51P multi-quantum wells grown by molecular-beam epitaxy |
| 001776 |
| Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 μm (InyGa1-yAs/GaAs1-xSbx)/GaAs bilayer quantum wells |
| 001784 |
| Low threshold distribution feedback quantum cascade lasers at 7.6μm grown by gas source molecular beam epitaxy |
| 001800 |
| In situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy |
| 001810 |
| Heat management of MBE-grown antimonide lasers |
| 001813 |
| Growth and characterization of InN on sapphire substrate by RF-MBE |
| 001832 |
| Effect of layer thickness of immiscible alloy In0.52Al0.48As on the morphology of InAs nanostructure grown on In0.52Al0.48As/InP (001) |
| 001842 |
| Continuous-wave operation quantum cascade lasers at 7.95 μm |
| 001849 |
| Changing planar thin film growth into self-assembled island formation by adjusting experimental conditions |
| 001863 |
| A novel method for positioning of InAs islands on GaAs (110) |
| 001869 |
| 980 nm high power strained quantum well lasers array fabricated by MBE |
| 001870 |
| 980 nm QCW high power semiconductor lasers array |
| 001871 |
| 1.55-μm InGaAs/InGaAlAs MQW vertical-cavity surface-emitting lasers with InGaAlAs/InP distributed Bragg reflectors |
| 001878 |
| 20 meV-deep donor level in InN film of 0.76 eV band gap grown by plasma-assisted nitrogen source |
| 001886 |
| Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature |
| 001896 |
| On the origin of spin loss in GaMnN/InGaN light-emitting diodes |
| 001914 |
| Observation of spontaneous ordering in the optoelectronic material GaInNP |
| 001923 |
| Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy |
| 001930 |
| The fabrication of self-aligned InAs nanostructures on GaAs(331)A substrates |
| 001961 |
| Rhombus-like stripe BA InGaAs-AlGaAs-GaAs lasers |
| 001973 |
| Ordering growth of InAs quantum dots on ultra-thin InGaAs strained layer |
| 001975 |
| Optical property of self-assembled InAs quantum dots in Al0.5Ga0.5As barriers grown by molecular beam epitaxy |
| 001977 |
| Optical characteristics of InAs quantum dots capped with short period GaAs/InAs superlattices and InGaAs combination layers |
| 001998 |
| InAs nanostructure grown with different growth rate in InAlAs matrix on InP (001) substrate |
| 001A07 |
| Growth of nanostructures on composition-modulated InAlAs surfaces |
| 001A27 |
| Effect of the InAlAs and InGaAs combination strain-reducing layer on 1.3 μm emission self-assembled InAs/GaAs quantum dots |
| 001A37 |
| Characterization of InAs quantum dots on lattice-matched InAlGaAs/InP superlattice structures |
| 001A54 |
| InN island shape and its dependence on growth condition of molecular-beam epitaxy |
| 001A70 |
| Silicon Doping Induced Increment of Quantum Dot Density |
| 001B29 |
| The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing |
| 001B45 |
| Structure and optical properties of upper In(Ga)As quantum dots on a different seed layer with a thin GaAs spacer layer |
| 001B67 |
| Opto-electronic properties of MBE-grown ZnSSe thin films on ITO substrates |
| 001B90 |
| In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate |
| 001C03 |
| GalnNAs: Growth and characterization |
| 001C23 |
| Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots |
| 001C33 |
| Correlation of structural and optical investigation of InGaAs/InAlAs quantum cascade laser |
| 001C60 |
| Self-assembled GaAs antiwires in In0.53Ga0.47As matrix on (100) InP substrates |
| 001C85 |
| Growth and coalescence evolution of InAs on GaAs by molecular beam epitaxy |
| 001D03 |
| ZnMgSSe Metal-Semiconductor-Metal Visible-Blind Photodetectors with Transparent Indium-Tin-Oxide Contact Electrodes |
| 001D07 |
| InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular-beam epitaxy |
| 001D08 |
| Low-Voltage-Operation High-Power-Density AlGaAs/InGaAs Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistor for Personal Handy-Phone Handset Application |
| 001D22 |
| The effects of concomitant In and N incorporation on the photoluminescence of GaInNAs |
| 001D36 |
| Strain relaxation of InP film directly grown on GaAs patterned compliant substrate |
| 001D61 |
| Influence of strain on annealing effects of In(Ga)As quantum dots |
| 001D63 |
| InAsyP1-y/InP quantum wells grown by solid source molecular beam epitaxy using As2 and As4 |
| 001D85 |
| Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots |
| 001D88 |
| Dependence of optical properties on the structure of multi-layer self-organized InAs quantum dots emitting near 1.3 μm |
| 001E05 |
| A novel line-order of InAs quantum dots on GaAs |
| 001E58 |
| Evolution of island-pit surface morphologies of InAs epilayers grown on GaAs (001) substrates |
| 001E65 |
| Temperature invariant lasing and gain spectra in self-assembled GaInAs quantum wire Fabry-Perot lasers |
| 001E68 |
| Phosphorus-Species-Induced Band-Gap Anomaly in InGaP Grown by Solid-Source Molecular-Beam Epitaxy |
| 001E84 |
| The keys to get high transconductance of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs devices |
| 001E87 |
| Temperature and injection current dependencies of 2 μm InGaAsSb/AlGaAsSb multiple quantum-well ridge-waveguide lasers |
| 001E96 |
| Surface corrugation of In0.15Ga0.85As layers grown on (5 5 3) b-oriented GaAs substrates by molecular beam epitaxy |
| 001F01 |
| Studies on incorporation of As2 and As4 in III-V compound semiconductors with two group V elements grown by molecular beam epitaxy |
| 001F02 |
| Structural anisotropy and optical properties of InxGa1-xAs quantum dots on GaAs(001) |
| 001F06 |
| Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer |
| 001F07 |
| Self-assembled quantum dots, wires and quantum-dot lasers |
| 001F09 |
| Quasi RT-CW operation of InGaAs/InGaAsP strained quantum well lasers |
| 001F10 |
| Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy |
| 001F14 |
| Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer |
| 001F22 |
| Multiple quantum wells and laser structures containing InAs quantum dots grown by molecular-beam epitaxy |
| 001F25 |
| Mid-infrared GaInAsSb photodetector grown by solid source molecular beam epitaxy |
| 001F27 |
| MBE grown 2.0 μm InGaAsSb/AlGaAsSb MQW ridge waveguide laser diodes |
| 001F31 |
| Influence of growth conditions on self-assembled InAs nanostructures grown on (001)InP substrate by molecular beam epitaxy |
| 001F33 |
| InGaAs/InGaAsP microdisk lasers grown by GSMBE |
| 001F41 |
| High-quality metamorphic HEMT grown on GaAs substrates by MBE |
| 001F47 |
| Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy |
| 001F59 |
| Effect of InxGa1-xAs (0≤x≤0.4) capping layer on self-assembled 1.3 μm wavelength InAs/GaAs quantum islands |
| 001F66 |
| Characteristics of strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE |
| 002001 |
| Influence of InxGa1-xAs (0≤x≤0.3) Cap Layer on Structural and Optical Properties of Self-assembled InAs/GaAs Quantum Dots |
| 002005 |
| Anomalous Phosphorus Cracker Temperature-Dependent Photoluminescence Spectra of InGaP Grown by Solid Source Molecular Beam Epitaxy |
| 002007 |
| Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy |
| 002048 |
| Two-dimensional ordering of self-assembled InAs quantum dots grown on (3 1 1)B InP substrate |
| 002053 |
| The structural and photoluminescence properties of self-organized quantum dots in InAs/In0.53 Ga0.47 As multilayer on InP substrate |
| 002055 |
| The effect of substrate orientation on the morphology of InAs nanostructures on (0 0 1) and (1 1 n)A/B (n = 1-5) InP substrates |
| 002058 |
| Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots |
| 002059 |
| Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers |
| 002062 |
| Study of AlGaAsSb/InGaAsSb strained quantum well grown by molecular beam epitaxy on GaSb(100) |
| 002063 |
| Structural and optical characterization of InAs nanostructures grown on (001) and high index InP substrates |
| 002065 |
| Strain-compensated quantum cascade lasers operating at room temperature |
| 002067 |
| Self-ordering of quasi-quantum wire in InAlAs/AlGaAs multilayer nanostructure and its optical anisotropy |
| 002068 |
| Self-assembled InAs quantum wires on InP(001) |
| 002070 |
| Room temperature 1.55 μm emission from InAs quantum dots grown on (001)InP substrate by molecular beam epitaxy |
| 002093 |
| InP-based enhancement-mode pseudomorphic HEMT with strained In0.45Al0.55As barrier and In0.75Ga0.25As channel layers |
| 002115 |
| Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice |
| 002121 |
| Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes |
| 002122 |
| Effect of rapid thermal annealing on InGaAs/GaAs quantum wells |
| 002125 |
| Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots |
| 002132 |
| Characteristics of semi-conductor laser diode with nonlinearly tapered waveguide |
| 002137 |
| Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy |
| 002146 |
| 1.35 μm photoluminescence from In0.5Ga0.5As/GaAs islands grown by molecular beam epitaxy via cycled (InAs)1/(GaAs)1 monolayer deposition |
| 002173 |
| Observation of abnormal capacitance-frequency behavior in In0.12Ga0.88As/GaAs p-i-n superlattice grown at low temperature |
| 002205 |
| Structure and photoluminescence of InGaAs self-assembled quantum dots grown on InP(001) |
| 002206 |
| Room-temperature operation of In0.5Ga0.5As as quantum dot lasers grown on misoriented GaAs substrates by molecular beam epitaxy |
| 002207 |
| Reduction of spontaneous surface segregation in (InP)2/(GaP)2 quantum wells grown on tilted substrates |
| 002208 |
| Photoluminescence study of high-quality InGaAs/GaAs quantum dots on (111)B GaAs substrates |
| 002209 |
| Photoluminescence characteristics of self-assembled In0.5Ga0.5As quantum dots on vicinal GaAs substrates |
| 002210 |
| Excitation density and temperature dependent photoluminescence of InGaAs self-assembled quantum dots |
| 002214 |
| Uniformity enhancement of the self-organized InAs quantum dots |
| 002215 |
| Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(3 1 1)B surfaces |
| 002216 |
| Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(3 1 1)B surfaces |
| 002228 |
| Substrate surface atomic structure influence on the growth of InAlAs quantum dots |
| 002232 |
| Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures |
| 002233 |
| Structural and optical characterization of InAs nanostructures grown on high-index InP substrates |
| 002234 |
| Structural and optical characteristics of self-organized InAs quantum dots grown on GaAs (3 1 1)A substrates |
| 002238 |
| Size quantization effects in InAs self-assembled islands on InP(0 0 1) at the onset of 2D-to-3D transition |
| 002240 |
| Self-organization of wire-like InAs nanostructures on InP |
| 002241 |
| Self-organization of the InGaAs/GaAs quantum dots superlattice |
| 002242 |
| Self-assembled InAs and In0.9Al0.1As quantum dots on (0 0 1)InP substrates grown by molecular beam epitaxy (MBE) |
| 002265 |
| Indium composition dependence of size uniformity of InGaAs quantum dots on (311)B GaAs grown by means of molecular beam epitaxy |
| 002267 |
| InAs/In0.52Al0.48As quantum wire structure with the specific layer-ordering orientation on InP(0 0 1) |
| 002268 |
| In composition dependence of lateral ordering in InGaAs quantum dots grown on (311)B GaAs substrates |
| 002272 |
| GSMBE grown infrared quantum cascade laser structures |
| 002274 |
| Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(100) and high index substrates by molecular beam epitaxy |
| 002283 |
| Effect of growth interruption on the optical properties of InAs/GaAs quantum dots |
| 002293 |
| The reduction and enhancement of spontaneous ordering in (InP)2/(GaP)2 quantum wells grown by solid source molecular beam epitaxy |
| 002306 |
| InGaAs/GaAs quantum dots on (111)B GaAs substrates |
| 002325 |
| Ordered InAs quantum dots in InAlAs matrix on (001) InP substrates grown by molecular beam epitaxy |
| 002332 |
| Optical modes within III-nitride multiple quantum well microdisk cavities |
| 002337 |
| Ordering reduction in In0.5Ga0.5P grown by solid source molecular beam epitaxy |
| 002351 |
| The self-organized In0-25Ga0-75As quantum dots grown by migration enhanced epitaxy |
| 002368 |
| Photoluminescence from InAs quantum dots on GaAs(100) |
| 002391 |
| InAs quantum dots in InAlAs matrix on (0 0 1)InP substrates grown by molecular beam epitaxy |
| 002393 |
| Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux |
| 002404 |
| Growth and transport properties of InAs thin films on GaAs |
| 002413 |
| Effects of growth temperature on highly mismatched InAs grown on GaAs substrates by MBE |
| 002414 |
| Effects of growth interruption on self-assembled InAs/GaAs islands |
| 002426 |
| Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy |
| 002441 |
| Molecular beam epitaxy growth of Iny2Al1-y2As/In0.73Ga0.27As/Iny1Al1-y1As/ InP P-HEMTs with enhancement conductivity using an intentional nonlattice-matched buffer layer |
| 002461 |
| Self-formed InGaAs/GaAs quantum dot superlattice and direct observation on strain distribution in the capped superlattice |
| 002466 |
| InAs room temperature infrared photoconductive detectors grown by molecular-beam epitaxy |
| 002506 |
| Investigation of dislocations and traps in MBE grown p-InGaAs/GaAs heterostructures |
| 002510 |
| Growth of high-quality relaxed In0.3Ga0.7As/GaAs superlattices |
| 002526 |
| Characteristics of InAs epilayers for Hall effect devices grown on GaAs substrates by MBE |
| 002577 |
| Elimination of orientation domains and antiphase domains in the epitaxial films with chalcopyrite structure |
| 002579 |
| Compositional disordering of InGaAs/GaAs heterostructures by low-temperature-grown GaAs layers |
| 002581 |
| Photoluminescence studies of InAs/InGaAs/AlAs strained single quantum well structures |
| 002588 |
| The effect of III-V ratio at the substrate surface on the quality of InP grown by GSMBE |
| 002599 |
| Parametric study on lattice-matched and pseudomorphic InGaAs/InAlAs/InP modulation-doped heterostructures grown by GSMBE |
| 002613 |
| Improved performance of InAlAs-InGaAs-InP MSM photodetectors with graded superlattice structure grown by gas source MBE |
| 002617 |
| GSMBE growth and PL investigation of lattice-matched InGaAs/InP quantum wells |
| 002628 |
| Raman scattering from longitudinal-optical phonon-plasmon-coupled mode in carbon-doped p-type InGaAs |
| 002629 |
| Optical investigation of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells |
| 002632 |
| Photoluminescence of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells |
| 002633 |
| Critical layer thickness in metal organic chemical vapor deposition grown InGaAs/GaAs strained quantum wells |
| 002638 |
| Photoreflectance temperature dependence of graded InAlAs/InGaAs heterojunction bipolar transistor layers |
| 002658 |
| The wavelength shift in GaInAsSb photodiode structures |
| 002660 |
| Photoreflectance study on the two-dimensional electron gas of InAlAs/InGaAs heterojunction bipolar transistor grown by molecular beam epitaxy |
| 002664 |
| Photoreflectance characterization of graded InAlAs/InGaAs heterojunction bipolar transistor layers |
| 002667 |
| Molecular beam epitaxy regrowth using a thin In layer for surface passivation |
| 002668 |
| Spectroscopic studies of the effects of two-dimensional electron gas on interband transitions |
| 002670 |
| Luminescence of low-temperature GaAs in a GaAs/In0.2Ga0.8As multiple quantum well structure |
| 002680 |
| Investigation of the epitaxial growth of InxGa1-xAs on GaAs(001) and extension of two-dimensional-three-dimensional growth mode transition |
| 002682 |
| Schottky barrier heights of InxAl1-xAs (0≤x≤0.35) epilayers on GaAs |
| 002699 |
| SiGe/Si bifurcation optical active switch based on plasma dispersion effect |
| 002750 |
| Molecular-beam epitaxial growth of InxAl1-xAs on GaAs |
| 002752 |
| Influence of cap layer thickness on optical quality in In0.2Ga0.8As/GaAs single quantum wells |
| 002759 |
| The band gap of ''perfectly disordered'' Ga0.52In0.48P |
| 002760 |
| Photoreflectance study of surface Fermi level in molecular beam epitaxial grown InAlAs heterostructures |
| 002764 |
| Two-dimensional arsenic precipitation by In delta doping during low temperature molecular beam epitaxy growth of GaAs or AlGaAs |
| 002767 |
| Photoreflectance characterization of an InAlAs/InGaAs heterostructure bipolar transistor |
| 002769 |
| Strong accumulation of As precipitates in low temperature InGaAs quantum wells grown by molecular beam epitaxy |
| 002771 |
| Dislocation generation mechanisms of InxGa1-xAs (0≤x≤1) epilayers grown on (100) InP substrates by molecular beam epitaxy |
| 002774 |
| Deposition of gallium oxide and indium oxide on GaAs for in situ process use by alternating supply of TEGa, TMIn, and H2O2 as surge pulses |
| 002797 |
| High-quality InGaP and InGaP/InAlP multiple quantum well grown by gas-source molecular beam epitaxy |
