| Ident. | Authors (with country if any) | Title |
|---|
| 000020 |
| Interface layer control and optimization of InAs/GaSb type-II superlattices grown by molecular beam epitaxy |
| 000217 |
| InAs/GaSb type-II superlattice mid-wavelength infrared focal plane array detectors grown by molecular beam epitaxy |
| 000379 |
| Temperature dependent empirical pseudopotential theory for self-assembled quantum dots |
| 000528 |
| First-principle study of the electronic and optical properties of BInGaAs quaternary alloy lattice-matched to GaAs |
| 000623 |
| Analysis of Interface Scattering in AlGaN/GaN/InGaN/GaN Double-Heterojunction High-Electron-Mobility Transistors |
| 000808 |
| Influence of buffer layer thickness and epilayer's growth temperature on crystalline quality of InAs0.6P0.4/InP grown by LP-MOCVD |
| 000824 |
| Improvement of structural and electrical properties of Cu2O films with InN epilayers |
| 000843 |
| Growth mechanism of vertical compositional inhomogeneities in AlInN films |
| 000B02 |
| Light-splitting photovoltaic system utilizing two dual-junction solar cells |
| 000D34 |
| Strain effect in determining the geometric shape of self-assembled quantum dot |
| 001186 |
| Effect of buffer layer thickness and epilayer growth temperature on crystalline quality of InAs0.9Sb0.1 grown by MOCVD |
| 001258 |
| The use of electron backscatter diffraction to measure the elastic strain fields in a misfit dislocation-free InGaAsP/InP heterostructure |
| 001266 |
| The growth of high-Al-content InAlGaN quaternary alloys by RF-MBE |
| 001520 |
| The effects of a stress field and chemical diffusion on electronic behaviour in InAs/GaAs quantum dots |
| 001609 |
| InGaP/GaAs heterojunction bipolar transistor grown by solid-source molecular beam epitaxy with a GaP decomposition source |
| 001850 |
| Calculation of valence subband structures for strained GaInP/AlGaInP quantum wells without axial approximation |
| 001B47 |
| Strain relaxation of InAs epilayer on GaAs under In-rich conditions |
| 001B95 |
| High-performance enhancement-mode pseudomorphic InGaP/InGaAs/GaAs HEMT structures by gas source molecular beam epitaxy |
| 001C33 |
| Correlation of structural and optical investigation of InGaAs/InAlAs quantum cascade laser |
| 001D36 |
| Strain relaxation of InP film directly grown on GaAs patterned compliant substrate |
| 001D42 |
| Quasi-thermodynamic analysis of MOVPE growth of GaxAlyIn1-x-yN |
| 002063 |
| Structural and optical characterization of InAs nanostructures grown on (001) and high index InP substrates |
| 002072 |
| Relaxation mechanism of GaP/InGaAlP/GaAs heterostructure |
| 002221 |
| The effect of strain on the miscibility gap in Ga-In-Sb ternary alloy |
| 002229 |
| Study of overgrowth heterostructure InSb/GaAs by scanning electron acoustic microscopy |
| 002262 |
| Liquid phase epitaxial growth of AlGaInPAs on GaAs substrates |
| 002384 |
| Liquid-phase epitaxial growth of InAsPSb/InAs heterostructure |
| 002390 |
| Influence of the elastic energy due to lattice mismatch on phase equilibria in the epitaxy of As-Ga-In layers |
| 002599 |
| Parametric study on lattice-matched and pseudomorphic InGaAs/InAlAs/InP modulation-doped heterostructures grown by GSMBE |
| 002617 |
| GSMBE growth and PL investigation of lattice-matched InGaAs/InP quantum wells |
| 002717 |
| Growth of GaAs-InP heteromaterials and corresponding strain determination |
| 002870 |
| High-resolution DLTS and its application to lattice-mismatch-induced deep levels in InGaP |
| 002877 |
| Effect of substrate misorientation on the optical properties and hole concentration of Ga0.5In0.5P and (Al0.5Ga0.5)0.5In0.5P grown by low pressure metalorganic vapor phase epitaxy |
| 002934 |
| Calculations of optical constants for GaxIn1-xPyAs1-y alloys lattice-matched to InP |
| 002957 |
| Axial channeling studies of heteroepitaxial In0.25Ga0.75As on GaAs |
