| Ident. | Authors (with country if any) | Title |
|---|
| 000025 |
| Improved efficiency of indium-tin-oxide-free flexible organic light-emitting devices |
| 000048 |
| a-IGZO TFTs With Inductively Coupled Plasma Chemical Vapor Deposited SiOx Gate Dielectric |
| 000073 |
| Theoretical analysis of the inter-diffusion coefficients in the AlGaInP material quantum well intermixing |
| 000139 |
| Preparation and characterization of bowl-like porous ZnO film by electrodeposition using two-dimensional photonic crystal template |
| 000174 |
| Morphology and properties of ZnO nanostructures by electrochemical deposition: effect of the substrate treatment : ZnO and Related Materials |
| 000225 |
| Improved Quantum Efficiency in Semipolar (1101) InGaN/GaN Quantum Wells Grown on GaN Prepared by Lateral Epitaxial Overgrowth |
| 000282 |
| Effect of sputtering power and annealing temperature on the properties of indium tin oxide thin films prepared from radio frequency sputtering using powder target |
| 000287 |
| Effect of O2 Flow Rate During Channel Layer Deposition on Negative Gate Bias Stress-Induced Vth Shift of a-IGZO TFTs |
| 000296 |
| Dependence of the optoelectronic properties of selenium-hyperdoped silicon on the annealing temperature |
| 000362 |
| Transparent In-Plane-Gate Junctionless Oxide-Based TFTs Directly Written by Laser Scribing |
| 000378 |
| Temperature dependent lasing characteristics of InAs/InP(100) quantum dot laser |
| 000436 |
| Preparation of Sn-Ag-In Solder Bumps by Electroplating of Sn-Ag and Indium in Sequence and the Effect of Indium Addition on Microstructure and Shear Strength |
| 000718 |
| Shallow-Deep InGaN Multiple-Quantum-Well System for Dual-Wavelength Emission Grown on Semipolar (1122) Facet GaN |
| 000758 |
| Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy |
| 000784 |
| Material Properties of MOCVD Grown AlGaN Layers Influenced by Indium-Incorporation |
| 000788 |
| Low-Voltage Electric-Double-Layer TFTs on SiO2-Covered Paper Substrates |
| 000804 |
| Influences of channel metallic composition on indium zinc oxide thin-film transistor performance |
| 000838 |
| High power GaN-based LEDs with nano-structured Ga-doped ZnO (GZO) transparent conductive layer (TCL) |
| 000919 |
| Development of free-standing InGaN LED devices on Al2O3/Si substrate by wet etching |
| 000952 |
| An Indium-Free Transparent Resistive Switching Random Access Memory |
| 000B20 |
| Influence of oxygen flow rate on microstructural, electrical and optical properties of indium tin tantalum oxide films |
| 000B38 |
| High Brightness GaN Light Emitting Diodes with Different Barrier Widths in Quantum Wells for General Lighting Application |
| 000B43 |
| Free-standing GaN-based LEDs with ALD-Al2O3/Si substrate removed by wet etching |
| 000C03 |
| Effect of ZnO buffer layer on AZO film properties and photovoltaic applications |
| 000C31 |
| An improvement on short-wavelength photoresponse for a heterostructure HgCdTe two-color infrared detector |
| 000C33 |
| Adjustment of the selenium amount during ion beam sputtering deposition of CIS thin films |
| 000E24 |
| Influence of a p-InGaN/GaN short-period superlattice on the performance of GaN-based light-emitting diodes |
| 000E71 |
| Fabrication of polypyrrole micropatterns through microchannel-confined electropolymerization and their electrical conductivities |
| 000E81 |
| Enhanced electroluminescence of silicon-rich silicon nitride light-emitting devices by NH3 plasma and annealing treatment |
| 000F62 |
| A study of two-step growth and properties of In0.82Ga0.18As on InP |
| 000F73 |
| A Study on the Cl2/C2H4/Ar Plasma Etching of ITO Using Inductively Coupled Plasma |
| 001010 |
| Temperature dependence of PL spectrum in researching InGaAs/GaAs single quantum well |
| 001115 |
| Inductively coupled plasma etching of In1-x-yAlxGayAs in BCl3/Cl2/Ar |
| 001122 |
| Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching |
| 001154 |
| Enhancement of the light output of GaN-based light-emitting diodes using surface-textured indium-tin-oxide transparent ohmic contacts |
| 001179 |
| Effects of indium ion implantation on the total dose hardness of fully depleted SOI NMOSFET |
| 001331 |
| Photoluminescence dynamics and structural investigation of InGaN/GaN multiple quantum well light emitting diodes grown by metalorganic chemical vapor deposition |
| 001410 |
| Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction |
| 001462 |
| Current-induced phase partitioning in eutectic indium-tin Pb-Free solder interconnect |
| 001798 |
| InGaAs/InGaAsP microavity laser with directional output waveguide |
| 001808 |
| High-performance InP-based resonant cavity enhanced photodetector based on InP/air-gap Bragg reflectors |
| 001869 |
| 980 nm high power strained quantum well lasers array fabricated by MBE |
| 001B82 |
| MOCVD growth of strain-compensated multi-quantum wells light emitting diode |
| 001B89 |
| InGaN/GaN MQW high brightness LED grown by MOCVD |
| 001B95 |
| High-performance enhancement-mode pseudomorphic InGaP/InGaAs/GaAs HEMT structures by gas source molecular beam epitaxy |
| 001C39 |
| Blue and white organic electroluminescent devices based on 9,10-bis(2'-naphthyl)anthracene |
| 001D46 |
| Phase matching pseudo-resonant tunable InP-based MOEMS |
| 001D73 |
| Fabrication of high-brightness blue InGaN/GaN MQW LEDs |
| 001E95 |
| Surface micromachining techniques in InP based micro-opto-electro-mechanical system |
| 001F00 |
| Study of indium tin oxide thin film for separative extended gate ISFET |
| 001F22 |
| Multiple quantum wells and laser structures containing InAs quantum dots grown by molecular-beam epitaxy |
| 001F25 |
| Mid-infrared GaInAsSb photodetector grown by solid source molecular beam epitaxy |
| 001F27 |
| MBE grown 2.0 μm InGaAsSb/AlGaAsSb MQW ridge waveguide laser diodes |
| 001F41 |
| High-quality metamorphic HEMT grown on GaAs substrates by MBE |
| 001F44 |
| Gsmbe growth of InGaP/(In)GaAs modulation-doped heterostructures and their applications to HEMT and HHMT |
| 001F48 |
| GSMBE growth of InP-based MSM/HEMT OEIC structures |
| 002126 |
| Die bonding with Au/In isothermal solidification technique |
| 002379 |
| New method for the growth of highly uniform quantum dots |
| 002407 |
| Growth and characterization of InGaAs/InAlAs/InP high-electron-mobility transistor structures towards high channel conductivity |
| 002503 |
| Lapping technique of InP single crystal wafer |
| 002511 |
| Grid-pattern aligned InAs self-assembled quantum dots grown on InP substrate |
| 002512 |
| GaAs-InP heteroepitaxy and GaAs-InP MESFET fabrication by MOVPE |
| 002719 |
| GaInAsSb/GaSb infrared photodetectors prepared by MOCVD |
| 002833 |
| Hydrogenated amorphous silicon carbide double graded-gap p-i-n thin-film light-emitting diodes |
| 002953 |
| Properties of laser-induced thermochemical etching of InP |
| 002963 |
| Study and fabrication of superconducting multilayer tunnel junctions |
| 002964 |
| Open tube Zn diffusion using In/Zn sources and its application in quasi-planar InP/InGaAsP HBT's |
| 002966 |
| Nd-YAG laser alloying of ohmic contacts on P-InP |
