| Ident. | Authors (with country if any) | Title |
|---|
| 000254 |
| Ferromagnetism in Cr doped In2O3 |
| 000808 |
| Influence of buffer layer thickness and epilayer's growth temperature on crystalline quality of InAs0.6P0.4/InP grown by LP-MOCVD |
| 000B66 |
| Enhancement in light extraction efficiency from GaN based LEDs with nanopores ITO p-contact grown on patterned sapphire substrate |
| 000C01 |
| Effect of epilayer's growth temperature on crystalline quality of In As0.6P0.4/InP grown by two-step growth method |
| 000F05 |
| Effect of buffer thickness on properties of In0.8Ga0.2As/InP with two-step growth technique |
| 001083 |
| Nitrogen Incorporation Characteristics of 4H-SiC Epitaxial Layer |
| 001577 |
| Optimization of active region for 1.3-μm GaInAsP compressive-strain multiple-quantum-well ridge waveguide laser diodes |
| 001588 |
| Narrow stripe selective growth of oxide-free InGaAlAs/InGaAlAs MQWs by ultra-low pressure MOVPE |
| 001621 |
| Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties |
| 001703 |
| Thermal annealing of InN films grown by metal-organic chemical vapor deposition |
| 001928 |
| The influence of Si-doping to the characteristics of AlGaInP/GaInP multiple quantum wells |
| 001A34 |
| Crack-free InAlGaN quaternary alloy films grown on Si(1 1 1) substrate by metalorganic chemical vapor deposition |
| 001B43 |
| Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method |
| 001B46 |
| Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0 0 0 1) sapphire substrate |
| 001C05 |
| Field-aided collection in GaInP2 top solar cells |
| 001C18 |
| Effects of TMIn flow rate of barrier layer on the optical and structural properties of InxGa1-xN/InyGa1-yN multiple quantum wells |
| 001D37 |
| Statistical investigation on morphology development of gallium nitride in initial growth stage |
| 001D44 |
| Photoluminescence of InAs self-organized quantum dots on (001)InP substrate with GaAs interlayer |
| 001D57 |
| Low temperature photoluminescence of InAs self-organized quantum dots on (001) InP substrate with GaAs interlayer |
| 001F32 |
| Indium doping effect on GaN in the initial growth stage |
| 002095 |
| In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE |
| 002119 |
| Effect of thin GaAs tensile-strained layer on InAs quantum dots on InP (001) substrate grown by LP-MOVPE |
| 002350 |
| The study of single mode 650nm AlGaInP quantum well laser diodes for DVD |
| 002388 |
| Investigation of 980nm GaInAs/GaAs/GaInP QW high power lasers |
| 002397 |
| High-power BA Al-free InGaAsP/GaAs SCH SQW lasers |
| 002401 |
| High brightness AlGaInP Orange light emitting diodes |
| 002611 |
| Investigation of strain-compensated InGaAs(P)/InGaAs(P)/InP multiple quantum well structures grown by LP-MOVPE |
| 002871 |
| High-performance undoped InP/n-In0.53Ga0.47As MSM photodetectors grown by LP-MOVPE |
