| Ident. | Authors (with country if any) | Title |
|---|
| 000016 |
| Novel aminoalkyl-functionalized blue-, green- and red-emitting polyfluorenes |
| 000026 |
| ITO@Cu2S Tunnel Junction Nanowire Arrays as Efficient Counter Electrode for Quantum-Dot-Sensitized Solar Cells |
| 000161 |
| Optical and structural studies of dual wavelength InGaN/GaN tunnel-injection light emitting diodes grown by metalorganic chemical vapor deposition |
| 000168 |
| Near-infrared luminescence enhancing by co-doping Bi3+ in YVO4:Nd3+ |
| 000264 |
| Enhanced Ce3+ photoluminescence by Li+ co-doping in CaO phosphor and its use in blue-pumped white LEDs |
| 000271 |
| Efficient quantum dot light-emitting diodes with solution-processable molybdenum oxide as the anode buffer layer |
| 000276 |
| Effects of Sb-doping on the grain growth of Cu(In, Ga)Se2 thin films fabricated by means of single-target sputtering |
| 000304 |
| Continuous-Flow MOVPE of Ga-Polar GaN Column Arrays and Core-Shell LED Structures |
| 000320 |
| Band Edge Modulation and Light Emission in InGaN Nanowires Due to the Surface State and Microscopic Indium Distribution |
| 000338 |
| A new europium(III)-β-diketonate complex based on diphenylethyne as red phosphors applied in LED |
| 000444 |
| Photoluminescence characterization of a novel red-emitting phosphor In2(MoO4)3:Eu3+ for white light emitting diodes |
| 000659 |
| Top Transmission Grating GaN LED Simulations for Light Extraction Improvement |
| 000745 |
| Polarized GaN-based light-emitting diode with an embedded metallic/dielectric subwavelength grating |
| 000822 |
| Improving p-type contact characteristics by Ni-assisted annealing and effects on surface morphologic evolution of InGaN LED films grown on Si ( 1 1 1 ) |
| 000A10 |
| Synthesis, crystal structure, photo- and electro-luminescence of 3-(4-(anthracen-10-yl)phenyl)-7-(N,N'-diethylamino)coumarin |
| 000A73 |
| Photo/electroluminescence properties of an europium (III) complex doped in 4,4'-N, N'-dicarbazole-biphenyl matrix |
| 000B23 |
| Indium tin oxide thin films for silicon-based electro-luminescence devices prepared by electron beam evaporation method |
| 000D79 |
| Photo-and electro-luminescent properties of 5,10,15,20-tetra-p-tolyl-21H,23H-porphine doped poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene] films |
| 000F21 |
| Diarylmethylene-bridged 4,4'-(bis(9-carbazolyl))biphenyl: morphological stable host material for highly efficient electrophosphorescence |
| 000F24 |
| Design and epitaxy of structural III-nitrides |
| 000F67 |
| A new kind of peripheral carbazole substituted ruthenium(II) complexes for electrochemical deposition organic light-emitting diodes |
| 001074 |
| Organic light-emitting devices with fullerene\aluminum composite anode |
| 001097 |
| Micro-cylinder mode in photonic quasicrystal observed by near-field optical microscopy |
| 001109 |
| Iridium complexes embedded into and end-capped onto phosphorescent polymers : optimizing PLED performance and structure-property relationships |
| 001152 |
| Europium β-diketonates for red-emitting electroluminescent devices |
| 001165 |
| Electroluminescence from ZnO nanowires with a p-ZnO film/n-ZnO nanowire homojunction |
| 001234 |
| A terbium (III) complex with triphenylamine-functionalized ligand for organic electroluminescent device |
| 001262 |
| The origins of double emission peaks in electroluminescence spectrum from InGaN/GaN MQW LED |
| 001264 |
| The influence of internal electric fields on the transition energy of InGaN/GaN quantum well |
| 001394 |
| Green electroluminescence from ZnO/n-InP heterostructure fabricated by metalorganic chemical vapour deposition |
| 001468 |
| Comparative study on the synthesis, photoluminescence and application in InGaN-based light-emitting diodes of TGA:Ce3+ phosphors |
| 001473 |
| Charge tunneling and cross recombination at organic heterojunction under electric fields |
| 001476 |
| Cathodoluminescence study of InGaN/GaN quantum-well LED structures grown on a Si substrate |
| 001499 |
| White organic electroluminescent device with photovoltaic performances |
| 001515 |
| The surface properties of treated ITO substrates effect on the performance of OLEDs |
| 001525 |
| Synthesis, characterization, photophysics and electroluminescence based on a series of pyran-containing emitters |
| 001547 |
| Structural and optical properties of violet InGaN/AlInGaN light-emitting diodes grown by MOCVD |
| 001718 |
| Synthesis and electroluminescence properties of europium (III) complexes with new second ligands |
| 001769 |
| Organic electroluminescent derivatives containing dibenzothiophene and diarylamine segments |
| 001782 |
| Luminescence properties of multi-layer InGaN quantum dots grown on C- and R-plane sapphire substrates |
| 001787 |
| Investigation into the effect of LiF at the organic interface on electroluminescence |
| 001814 |
| Growth and characterization of InGaN blue LED structure on Si(111) by MOCVD |
| 001876 |
| Luminescence efficiency of InGaN multiple-quantum-well ultraviolet light-emitting diodes |
| 001889 |
| Study of AlGaInP multiquantum-well/double heterostructure light-emitting diodes with In-added GaP window layer regrown by antimony-based liquid phase epitaxy |
| 001890 |
| InGaN/AlGaN near-ultraviolet multiple quantum well light-emitting diodes with p-InGaN tunneling contact layer |
| 001893 |
| Characterization of Large-Area AlGaInP/Mirror/Si Light-Emitting Diodes Fabricated by Wafer Bonding |
| 001896 |
| On the origin of spin loss in GaMnN/InGaN light-emitting diodes |
| 001901 |
| InGaN/GaN Light Emitting Diodes with a Lateral Current Blocking Structure |
| 001903 |
| Mapping of multiple-quantum-well layers and structure of V defects in InGaN/GaN diodes |
| 001906 |
| High-power AlGaInP light-emitting diodes with metal substrates fabricated by wafer bonding |
| 001941 |
| Surface modification of indium-tin-oxide anode by oxygen plasma for organic electroluminescent devices |
| 001946 |
| Study of stimulated emission from InGaN/GaN multiple quantum well structures |
| 001A65 |
| Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n-GaN layers |
| 001A77 |
| The Comparisons between GaP Window Layers of Double-Heterojunction Light-Emitting Diodes using Various Dopants and Source Melts Regrown by Indium-Addition Liquid Phase Epitaxy |
| 001A80 |
| Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths |
| 001A87 |
| AlGaInP Light Emitting Diode with a Modulation-Doped Superlattice |
| 001A88 |
| Thermal property of tunnel-regenerated multiactive-region light-emitting diodes |
| 001B00 |
| Effect of current spreading on luminescence improvement in selectively oxidized AlGaInP light-emitting diodes |
| 001B03 |
| High-Indium-Content InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes |
| 001B11 |
| Comparison of p-Side Down and p-Side Up GaN Light-Emitting Diodes Fabricated by Laser Lift-Off |
| 001C54 |
| Pure red electroluminescence from a host material of binuclear gallium complex |
| 001C63 |
| Enhanced hole injections in organic light-emitting devices by depositing nickel oxide on indium tin oxide anode |
| 001C65 |
| Anode modification of polyfluorene-based polymer light-emitting devices |
| 001C84 |
| High-density plasma-induced etch damage of wafer-bonded AlGaInP/mirror/Si light-emitting diodes |
| 001C89 |
| White electroluminescence from hydrogenated amorphous-SiNx thin films |
| 001C91 |
| High-efficiency white organic light-emitting devices with dual doped structure |
| 001D10 |
| Enhanced performance of organic light-emitting devices by atmospheric plasma treatment of indium tin oxide surfaces |
| 001E26 |
| Tunnel-regenerated multiple-active-region light-emitting diodes with high efficiency |
| 001E31 |
| Photoluminescence and Electroluminescence Characteristics of New Disubstituted Polyacetylenes |
| 001E46 |
| Temperature dependence of the radiative recombination zone in InGaN/GaN multiple quantum well light-emitting diodes |
| 001E56 |
| Temperature-dependent electroluminescence in poly [2-methoxy-5(2′-ethylhexyloxy)-p-phenylenevinylene] light-emitting diode |
| 001E57 |
| Nanoscale surface electrical properties of indium-tin-oxide films for organic light emitting diodes investigated by conducting atomic force microscopy |
| 001E63 |
| Microtwin formation mechanism in GaP/AlGaInP/GaAs double heterostructure light-emitting diodes |
| 001E99 |
| Study on the interaction between Ag and tris(8-hydroxyquinoline) aluminum using x-ray photoelectron spectroscopy |
| 001F60 |
| Dynamic SIMS characterization of interface structure of Ag/Alq3/NPB/ITO model devices |
| 001F91 |
| Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells |
| 002004 |
| Dipyrazolopyridine derivatives as bright blue electroluminescent materials |
| 002011 |
| Phosphorus Vacancy as a Deep Level in AlInP Layers |
| 002020 |
| Modification of the hole injection barrier in organic light-emitting devices studied by ultraviolet photoelectron spectroscopy |
| 002034 |
| Wide angle distributed Bragg reflectors for 590 nm amber AlGaInP light-emitting diodes |
| 002073 |
| Real-time observation of temperature rise and thermal breakdown processes in organic LEDs using an IR imaging and analysis system |
| 002158 |
| AlGaInP light-emitting diodes with mirror substrates fabricated by wafer bonding |
| 002180 |
| AlGaInP/AuBe/glass light-emitting diodes fabricated by wafer bonding technology |
| 002317 |
| 650 nm AlGaInP/GaInP compressively strained multi-quantum well light emitting diodes |
| 002645 |
| Importance of poly(N-vinylcarbazole) dopant to poly(3-octylthiophene) electroluminescence |
| 002689 |
| Liquid-phase epitaxial growth and characterization of InGaAsP layers grown on GaAsP substrates for application to orange light-emitting diodes |
| 002745 |
| Window layer for current spreading in AlGaInP light-emitting diode |
