| Ident. | Authors (with country if any) | Title |
|---|
| 000259 |
| Fabrication and characteristics of BaTi0.85Sn0.15O3 thin films on tin doped indium oxide/glass substrate |
| 000900 |
| Effects of Mn substitution on ferro- and piezoelectric properties of Bi0.86SM0.14FeO3 thin films |
| 000E99 |
| Effects of annealing process and Mn substitution on structure and ferroelectric properties of BiFeO3 films |
| 001025 |
| Study on the Ce substitution effects of BiFeO3 films on ITO/glass substrates |
| 001156 |
| Enhanced multiferroic properties of (110)-oriented BiFeO3film deposited on Bi3.5Nd0.5Ti3O12-buffered indium tin oxide/Si substrate |
| 001231 |
| Abnormal rectifying behavior of In/SrTiO3 /SrTiO3:Nb capacitor |
| 001294 |
| Study of the electric properties of BiFe1- xZrxO3+δ films prepared by the sol-gel process |
| 001368 |
| Key issues associated with low threshold current density for InP-based quantum cascade lasers |
| 001438 |
| Effects of substitution of Ti for Fe in BiFeO3 films prepared by sol-gel process |
| 001829 |
| Effects of in doping on the properties of CdZnTe single crystals |
| 001A65 |
| Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n-GaN layers |
| 001C83 |
| Study of InGaP/GaAs/InGaAs high-barrier gate and heterostructure-channel field-effect transistors |
| 001E24 |
| Optimum Treatment for Improvement of Indium-Halo Structure for Sub-0.1 μm n-Type Metal-Oxide-Semiconductor Field-Effect Transistor |
| 001E41 |
| Improved n+-GaAs/p+-In0.49Ga0.51P/n-GaAs camel-like gate structure for high-breakdown, low-leakage, and high-temperature applications |
| 001E73 |
| The Effects of Super-Steep-Retrograde Indium Channel Profile on Deep Submicron n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor |
| 001F93 |
| Study of current leakage in InAs p-i-n photodetectors |
| 002156 |
| Low-leakage current and high-breakdown voltage GaAs-based heterostructure field-effect transistor with In0.5(Al0.66Ga0.34)0.5P Schottky layer |
| 002324 |
| Suppression of electron and hole leakage in 1.3 μm AlGaInAs/InP quantum well lasers using multiquantum barrier |
| 002463 |
| Optical characterization of real-space hot-electron transfer in a strained GaAs/In0.2Ga0.8As/GaAs quantum well heterostructure |
