| Ident. | Authors (with country if any) | Title |
|---|
| 000073 |
| Theoretical analysis of the inter-diffusion coefficients in the AlGaInP material quantum well intermixing |
| 000227 |
| Impact of double-cap procedure on the characteristics of InAs/InGaAsP/ InP quantum dots grown by metal-organic chemical vapor deposition |
| 000320 |
| Band Edge Modulation and Light Emission in InGaN Nanowires Due to the Surface State and Microscopic Indium Distribution |
| 000682 |
| The I-V characteristics of InAs/GaAs quantum dot laser |
| 000831 |
| High-power 1.25 μm InAs QD VECSEL based on resonant periodic gain structure |
| 000850 |
| GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy |
| 000B15 |
| Intracavity Second Harmonic Generation Characteristics of Semiconductor Disk Laser |
| 000C28 |
| Analysis on the high luminous flux white light from GaN-based laser diode |
| 000C46 |
| A Novel Gas Sensor Used for C2H2 Trace Detection in Power Transformer |
| 000C60 |
| White Light Emission from Ultraviolet Laser Diode |
| 000C61 |
| White Light Emission from Fiber Pigtailed Laser Module |
| 000D42 |
| Simulation of a 1550 nm InGaAsP-InP transistor laser |
| 000D88 |
| Optical bistability in InP/GaInAsP equilateral- triangle-resonator microlasers |
| 000F19 |
| Diffusion interaction between magnesium and zinc in 650 nm laser diodes wafer |
| 001076 |
| Optimizing the GaAs capping layer growth of 1.3 μm InAs/GaAs quantum dots by a combined two-temperature and annealing process at low temperatures |
| 001128 |
| Highly stable white light from ultraviolet laser diode |
| 001134 |
| High Power 1064nm Laser Diode Array and Measuring Chip Temperature Based on Emitting Spectra |
| 001191 |
| Directional emission InP/GaInAsP square-resonator microlasers |
| 001329 |
| Photoluminescence study of AlGaInP/GaInP quantum well intermixing induced by zinc impurity diffusion |
| 001358 |
| Metamorphic growth of 1.25-1.29 μm InGaAs quantum well lasers on GaAs by molecular beam epitaxy |
| 001363 |
| Long-wavelength VCSELs for optical networks and trace-gas monitoring |
| 001365 |
| Length dependence of polarization in spontaneous edge emissions from InGaN/AlGaN MQWs laser diodes |
| 001405 |
| Equilateral-triangle-resonator injection lasers with directional emission |
| 001550 |
| Spectral properties and energy transfer of Yb,Er: GdVO4 crystal |
| 001577 |
| Optimization of active region for 1.3-μm GaInAsP compressive-strain multiple-quantum-well ridge waveguide laser diodes |
| 001809 |
| High power output and temperature characteristics of 1.06μm diode array module |
| 001870 |
| 980 nm QCW high power semiconductor lasers array |
| 001979 |
| Nonlinearity in power-current characteristics of narrow-pulse-driven AlGaInP laser diodes |
| 001A30 |
| Determination of the effective refractive index spectrum of a quantum-well semiconductor laser diode from the measured modal gain spectrum |
| 001C14 |
| Electronic properties of III-V semiconductor heterostructures |
| 001D85 |
| Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots |
| 001E87 |
| Temperature and injection current dependencies of 2 μm InGaAsSb/AlGaAsSb multiple quantum-well ridge-waveguide lasers |
| 001F07 |
| Self-assembled quantum dots, wires and quantum-dot lasers |
| 001F09 |
| Quasi RT-CW operation of InGaAs/InGaAsP strained quantum well lasers |
| 001F22 |
| Multiple quantum wells and laser structures containing InAs quantum dots grown by molecular-beam epitaxy |
| 001F33 |
| InGaAs/InGaAsP microdisk lasers grown by GSMBE |
| 001F42 |
| High-power, low-beam-divergence 980 nm laser arrays with nonabsorbing facets |
| 001F59 |
| Effect of InxGa1-xAs (0≤x≤0.4) capping layer on self-assembled 1.3 μm wavelength InAs/GaAs quantum islands |
| 001F63 |
| Demonstrations for optical beam qualities of quantum well lasers |
| 001F66 |
| Characteristics of strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE |
| 002094 |
| InGaAsP/GaAs SCH SQW laser arrays grown by LPE |
| 002121 |
| Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes |
| 002501 |
| MBE growth and characterization of high-quality GaInAsSb/AlGaAsSb strained multiple quantum well structures |
| 002609 |
| Iron-doped semi-insulating InP grown by chloride VPE with nitrogen mixed with hydrogen as carrier gas |
| 002837 |
| Determination of wavelength dependence of the reflectivity at AR coated diode facets |
