| Ident. | Authors (with country if any) | Title |
|---|
| 000073 |
| Theoretical analysis of the inter-diffusion coefficients in the AlGaInP material quantum well intermixing |
| 000600 |
| Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD) |
| 000729 |
| Raman scattering and Rutherford backscattering studies on InN films grown by plasma-assisted molecular beam epitaxy |
| 001442 |
| Effect of size non-uniformity on photoluminescence from ensembles of InAs quantum dots embedded in GaAs |
| 001484 |
| Anomalous photoluminescence of InAs quantum dots implanted by Mn ions |
| 001923 |
| Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy |
| 001A11 |
| First-principles study of indium on silicon (1 0 0): the structure, defects and interdiffusion |
| 001D61 |
| Influence of strain on annealing effects of In(Ga)As quantum dots |
| 001D88 |
| Dependence of optical properties on the structure of multi-layer self-organized InAs quantum dots emitting near 1.3 μm |
| 002116 |
| Effects of interdiffusion on the luminescence of InAs/GaAs quantum dots covered by InGaAs overgrowth layer |
| 002121 |
| Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes |
| 002126 |
| Die bonding with Au/In isothermal solidification technique |
| 002261 |
| Measurement of diffusivity in molten films by a masking film method |
| 002882 |
| Deposition of YBa2Cu3O7-x films on Si with conductive indium oxide as a buffer layer |
| 002883 |
| Depositing In2O3 films as conductive buffer layers for high temperature YBa2Cu3O7-x superconducting thin films on silicon |
