| Ident. | Authors (with country if any) | Title |
|---|
| 000168 |
| Near-infrared luminescence enhancing by co-doping Bi3+ in YVO4:Nd3+ |
| 000207 |
| Influence of In3+ ions concentration on the defect structure and light-induced scattering of Ce:Mn:LiNbO3 crystals |
| 000299 |
| Crystal structures of two novel borate compounds MgInBO4 and MgIn7/8B7/8O29/8 |
| 000311 |
| Colloidal CZTS nanoparticles and films: Preparation and characterization |
| 000324 |
| Analysis of Nonradiative Carrier Recombination Processes in InN Films by Mid-infrared Spectroscopy |
| 000331 |
| A series of novel gallium and indium borates constructed from [B5O8(OH)2]3- clusters and metal complex linkers |
| 000338 |
| A new europium(III)-β-diketonate complex based on diphenylethyne as red phosphors applied in LED |
| 000358 |
| Two-colour mid-infrared absorption in InAs/GaSb type II and broken-gap quantum wells under gated electric field |
| 000397 |
| Subsolidus phase relations in CaO-In2O3-B2O3 system and crystal structure of CaInBO4 |
| 000441 |
| Plasma frequency and dielectric function dependence on doping and temperature for p-type indium phosphide epitaxial films |
| 000509 |
| High-Performance UV-Visible-NIR Broad Spectral Photodetectors Based on One-Dimensional In2Te3 Nanostructures |
| 000621 |
| Annealing of indium-doped CdMnTe single crystals under Cd vapors |
| 000641 |
| A Novel Clinically Translatable Fluorescent Nanoparticle for Targeted Molecular Imaging of Tumors in Living Subjects |
| 000846 |
| Growth and characterization of AgGa1-xInxSe2 crystals with high indium contents |
| 000A79 |
| Optical property analysis of CZT:In single crystals after annealing by a two-step method |
| 000D65 |
| Preparation and characterization of high contrast electrophoretic display suspension containing charged black-and-white nanoparticles |
| 000D97 |
| New indium selenite-oxalate and indium oxalate with two-and three-dimensional structures |
| 000E61 |
| First principles study on the properties of p-type conducting In:SnO2 |
| 000F29 |
| Defect structure and optical damage resistance of In:Fe:Cu:LiNbO3 crystals |
| 000F89 |
| Two-colour infrared absorption in InAs/GaSb-based type II and broken-gap quantum well systems |
| 000F94 |
| Third-order nonlinearities in GeSe2-In2Se3-CsI glasses for telecommunications applications |
| 001092 |
| Modified LPE technique growth and properties of long wavelength InAs0.05Sb0.95 thick film |
| 001116 |
| Indium tin oxide thin films prepared by ion beam assisted deposition technique at different ion beam currents |
| 001157 |
| Enhanced electroluminescence of Eu3+ by Tb3+ in complexes Tb1- xEux(TTA)3Dipy |
| 001182 |
| Effect of the oxygen flow on the properties of ITO thin films deposited by ion beam assisted deposition (IBAD) |
| 001237 |
| A novel sonochemical synthesis and nanostructured assembly of polyvinylpyrrolidone-capped CdS colloidal nanoparticles |
| 001248 |
| (2,2'-bipy)[In2(OH)2(H2O)](SO4)2 : The first indium sulfate with a layer structure |
| 001256 |
| Two-colour mid-infrared absorption in an InAs/GaSb-based type II and broken-gap quantum well |
| 001310 |
| Shape-controlled synthesis and optical characterization of chalcopyrite CuInS2 micro structures |
| 001392 |
| Growth and characterization of In doped Cd0.8Mn0.2Te single crystal |
| 001459 |
| Deposited indium-tin-oxide (ITO) transparent conductive films by reactive low-voltage ion plating (RLVIP) technique |
| 001475 |
| Characteristics of ITO films fabricated on glass substrates by high intensity pulsed ion beam method |
| 001552 |
| Single-crystal growth of mercury indium telluride (MIT) by vertical Bridgman method (VB) |
| 001560 |
| Raman scattering studies of the Ge-In sulfide glasses |
| 001580 |
| Optical properties of InN films grown by molecular beam epitaxy at different conditions |
| 001583 |
| Optical and electrical properties of indium-doped Cd0.9Zn0.1Te crystal |
| 001623 |
| Growth and characterization of InAs layers obtained by liquid phase epitaxy from Bi solvents |
| 001670 |
| Defect structure and optical damage resistance of In:Mg:Fe:LiNbO3 crystals with various Li/Nb ratios |
| 001708 |
| The electrical and optical properties of molybdenum-doped indium oxide films grown at room temperature from metallic target |
| 001767 |
| Origin of the blueshift in the infrared absorbance of intersubband transitions in AlxGa1-x N/GaN multiple quantum wells |
| 001812 |
| Growth and photorefractive properties of In:Fe:LiNbO3 crystals with various [Li]/[Nb] ratios |
| 001829 |
| Effects of in doping on the properties of CdZnTe single crystals |
| 001886 |
| Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature |
| 001929 |
| The first indium-organic two-dimensional layer network with rhombus grids |
| 001964 |
| Pure red organic electroluminescent devices using a novel europium(III) complex as emitting layer |
| 001990 |
| Lattice vibrational properties of InN thin films |
| 001A01 |
| Hydrothermal synthesis and characterization of two new three-dimensional fluoroindium phosphates In4(PO4)4(H2O)4F2.C6H14N2 and In8(P04)8(H2O)8F4. (C5H14N2)2 |
| 001A09 |
| Growth of In doped CdZnTe by vertical Bridgman method and the effect of In on the crystal properties |
| 001A16 |
| Experimental studies of lattice dynamical properties in indium nitride |
| 001A38 |
| Characteristics of doped indium in Cd0.9Zn0.1Te grown by the Bridgman method |
| 001A70 |
| Silicon Doping Induced Increment of Quantum Dot Density |
| 001B02 |
| Structural Design of a Passive Matrix (PM) Color Organic Light-Emitting Device |
| 001B10 |
| Differential surface photovoltage spectroscopy characterization of a 1.3 μm InGaAlAs/InP vertical-cavity surface-emitting laser structure |
| 001B63 |
| Photo-refractive properties of Mg:In:Fe:LiNbO3 crystal |
| 001C00 |
| Growth and optical properties of In:Nd:LiNbO3 crystals |
| 001C70 |
| Polaron model in self-assembled InAs/GaAs quantum dots- A perturbative approach |
| 001C77 |
| Investigation of transparent and conductive undoped Zn2In2O5-x films deposited on n-type GaN layers |
| 001C95 |
| Fe-Diffusion-Induced Defects in InP Annealed in Iron Phosphide Ambient |
| 001D02 |
| Nitrogen-induced enhancement of the electron effective mass in InNxAs1-x |
| 001D68 |
| Growth-dependent phonon characteristics in InN thin films |
| 001D70 |
| Growth and optical properties of nanocrystalline Ga0.81In0.19Sb embedded in silica film |
| 001E56 |
| Temperature-dependent electroluminescence in poly [2-methoxy-5(2′-ethylhexyloxy)-p-phenylenevinylene] light-emitting diode |
| 001F03 |
| Structural and optical characterization of nanocrystals of the InAs-InP system embedded in amorphous SiO2 thin films |
| 001F04 |
| Structural and electrochemical characterization of open-structured' ITO films |
| 001F39 |
| Hydrogen neutralization effect in bulk N-type LEC InP materials |
| 001F79 |
| A new transparent conductive thin film In2O3:Mo |
| 001F81 |
| A mild solvothermal route to chalcopyrite quaternary semiconductor CuIn(SexS1-x)2 nanocrystallites |
| 002013 |
| Tuning of conduction intersublevel absorption wavelengths in (In,Ga)As/GaAs quantum-dot nanostructures |
| 002084 |
| Photoconductive properties of ClAlPcCl and ClInPc composite thin film prepared by physical vapor deposition approach |
| 002129 |
| Czochralski growth and optical spectral properties of GInGG : Cr3+ single crystal |
| 002149 |
| GaInAsSb/InP heterojunction band offset: Measurement by absorption spectroscopy |
| 002161 |
| Strain effect on the band structure of InAs/GaAs quantum dots |
| 002206 |
| Room-temperature operation of In0.5Ga0.5As as quantum dot lasers grown on misoriented GaAs substrates by molecular beam epitaxy |
| 002208 |
| Photoluminescence study of high-quality InGaAs/GaAs quantum dots on (111)B GaAs substrates |
| 002209 |
| Photoluminescence characteristics of self-assembled In0.5Ga0.5As quantum dots on vicinal GaAs substrates |
| 002210 |
| Excitation density and temperature dependent photoluminescence of InGaAs self-assembled quantum dots |
| 002296 |
| Positron-lifetime study of compensation defects in undoped semi-insulating InP |
| 002302 |
| Optical and electrical properties of Sn-doped indium oxide films deposited on polyester by reactive evaporation |
| 002321 |
| High-temperature and low-threshold-current operation of 1.5 μm AlGaInAs/InP strain-compensated multiple quantum well laser diodes |
| 002326 |
| Formation of PIn defect in annealed liquid-encapsulated Czochralski InP |
| 002375 |
| Optical absorption spectra of coupled quantum wires InAsxP1-x/InP |
| 002394 |
| Hydrothermal synthesis of SrZrO3-α, [Sr1-xZrxO3-α] (M = Al, Ga, In, x ≤ 0.20) series oxides |
| 002455 |
| Optical and structural characterization of InAs/GaSb superlattices |
| 002618 |
| Exciton line broadening and intersubband absorption in quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells |
| 002658 |
| The wavelength shift in GaInAsSb photodiode structures |
| 002681 |
| Infrared reflection spectra of CdIn2O4 films |
| 002690 |
| Electric-field dependence of optical absorption properties in coupled quantum wells and their application to 1.3 μm optical modulator |
| 002701 |
| Room-temperature excitons in strained InGaAs/GaAs quantum wells |
| 002703 |
| Photomodulated transmission spectroscopy of InxGa1-xAs/GaAs MQWs under hydrostatic pressure |
| 002721 |
| Exciton line broadening in strained InGaAs/GaAs single quantum wells |
| 002740 |
| Study of indium antimonide metal-oxide-semiconductor structure prepared by direct photochemical-vapor deposition |
| 002789 |
| Optical studies of strained InGaAs/GaAs single quantum wells |
| 002793 |
| Metal vapor synthesis of air-sensitive transition metal fullerides : evidence of IR spectra |
| 002795 |
| Influence of the substitution of Y by In on the structure and magnetic property of Y2Cu2O5 |
