| Ident. | Authors (with country if any) | Title |
|---|
| 000008 |
| Surface state and optical property of sulfur passivated InP |
| 000060 |
| Tuning intersubband absorption in a shallow InAs/InP quantum wire via a transverse tilted magnetic field |
| 000069 |
| Tilt generation and phase separation in metamorphic GaInP buffers grown on GaAs substrates by metal-organic chemical vapor deposition |
| 000073 |
| Theoretical analysis of the inter-diffusion coefficients in the AlGaInP material quantum well intermixing |
| 000075 |
| The investigation of GaInP solar cell grown by all-solid MBE |
| 000078 |
| The effects of injector doping densities on lasing properties of InP-based quantum cascade lasers at 4.3 μm |
| 000123 |
| Radiative recombination of carriers in the GaxIn1-xP/GaAs double-junction tandem solar cells |
| 000149 |
| Photoluminescence properties of porous InP filled with ferroelectric polymers |
| 000162 |
| Optical Far-Field Method with Subwavelength Accuracy for the Determination of Nanostructure Dimensions in Large-Area Samples |
| 000188 |
| Large energy band-gap tuning of 980 nm InGaAs/InGaAsP quantum well structure via quantum well intermixing |
| 000213 |
| InP/InGaAs/InP DHBT structures with high carbon-doped base grown by gas source molecular beam epitaxy |
| 000214 |
| InP nanowires synthesized via solvothermal process with CTAB assisted |
| 000215 |
| InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit |
| 000216 |
| InGaAs/GaAsP/GaInP quantum well lasers with window structure fabricated by impurity free vacancy disordering |
| 000227 |
| Impact of double-cap procedure on the characteristics of InAs/InGaAsP/ InP quantum dots grown by metal-organic chemical vapor deposition |
| 000228 |
| Impact Ionization in Absorption, Grading, Charge, and Multiplication Layers of InP/InGaAs SAGCM APDs With a Thick Charge Layer |
| 000236 |
| High-speed direct modulation unidirectional emission microring lasers |
| 000326 |
| An improved model for InP/InGaAs double heterojunction bipolar transistors |
| 000368 |
| The model parameter extraction and simulation for the effects of gamma irradiation on the DC characteristics of InGaP/GaAs single heterojunction bipolar transistors |
| 000371 |
| The experimental investigation on dark current for InGaAs-InP avalanche photodiodes |
| 000378 |
| Temperature dependent lasing characteristics of InAs/InP(100) quantum dot laser |
| 000428 |
| Quasi-Axial GRIN Lens Implemented in Wedge-Shaped Fiber Coupling With InP-Based PLC |
| 000441 |
| Plasma frequency and dielectric function dependence on doping and temperature for p-type indium phosphide epitaxial films |
| 000548 |
| Enhanced doping efficiency of the remotely p-doped InAs/InP core-shell nanowires: A first principles study |
| 000641 |
| A Novel Clinically Translatable Fluorescent Nanoparticle for Targeted Molecular Imaging of Tumors in Living Subjects |
| 000643 |
| A Combined Model With Electrothermal Coupling and Electromagnetic Simulation for Microwave Multifinger InP-Based DHBTs |
| 000666 |
| Theoretical investigation on the structural, dynamical, and thermodynamic properties of the zinc-blende InX (X=P, As, Sb) |
| 000667 |
| The structure transition from vertical alignment to anti-alignment of InAs/InP quantum dot multilayers |
| 000688 |
| Synthesis, formation mechanism and electric property of hollow InP nanospheres |
| 000792 |
| Long Wavelength Multiple Resonant Cavities RCE Photodetectors on GaAs Substrates |
| 000809 |
| Influence of a Barrier Layer on the Formation of AuBe Ohmic Contact With the p-GaAs Bases of Heterojunction Bipolar Transistors |
| 000811 |
| InP/InGaAs/InP DHBT structures with graded composition base grown by gas source molecular beam epitaxy |
| 000813 |
| InP Lateral Overgrowth Technology for Silicon Photonics |
| 000863 |
| Extrinsic Base Surface Passivation in Terahertz GaAsSb/InP DHBTs Using InGaAsP Ledge Structures |
| 000891 |
| Electrical properties of stacking electrodes for flexible crystalline semiconductor photonic devices |
| 000959 |
| A unified calculation of the optical spectral band positions and electron paramagnetic resonance spectral data for Yb3+ in InP semiconductor |
| 000972 |
| 100 Gb/s RZ-OOK transmission through 212 km deployed SSMF using monolithically integrated ETDM receiver module |
| 000A48 |
| Selective etching of InP in NaF solution |
| 000B02 |
| Light-splitting photovoltaic system utilizing two dual-junction solar cells |
| 000B29 |
| Impedance spectroscopy characterization of proton-irradiated GaInP/GaAs/Ge triple-junction solar cells |
| 000B42 |
| Gate-controlled electron-electron interactions in an In0.53Ga0.47As/InP quantum well structure |
| 000B47 |
| First-principles study of phase transition and thermodynamic properties of InP |
| 000C01 |
| Effect of epilayer's growth temperature on crystalline quality of In As0.6P0.4/InP grown by two-step growth method |
| 000C50 |
| A Composite Transistor to Suppress Kink Phenomenon in HBTs for Broadband Design |
| 000C96 |
| Temperature dependence of terahertz properties for InP |
| 000D02 |
| Synthesis of In/InP core-shell nanospheres and their transformation into InP hollow nanospheres |
| 000D34 |
| Strain effect in determining the geometric shape of self-assembled quantum dot |
| 000D55 |
| Prospective important semiconducting nanotubes: synthesis, properties and applications |
| 000D72 |
| Photoluminescence investigation of ZnO:P nanoneedle arrays on InP substrate by pulsed laser deposition |
| 000E20 |
| Investigation on growth related aspects of catalyst-free InP nanowires grown by metal organic chemical vapor deposition |
| 000E32 |
| InP nanowires with various morphologies formed by Au-assisted metal-organic chemical vapor deposition |
| 000E33 |
| InP as new anode material for lithium ion batteries |
| 000E62 |
| First principles study of electronic and optical properties of zincblende InP |
| 000F35 |
| Core-level shifts of InP(10 0)(2 x 4) surface: Theory and experiment |
| 000F40 |
| Characteristics of photoluminescence and Raman spectra of InP doped silica fiber |
| 000F44 |
| Calculation of phase diagrams in AlxIn1-xAs/InP, AsxSb1-xAl/InP and AIxIn1-xSb/InSb nano-film systems |
| 000F45 |
| Calculation of Exciton Energy in InAs/InP Self-assembled Semiconductor Quantum Wires |
| 000F58 |
| Alloy phase separation in InAs/InAlAs/InP nanostructure superlattices studied by finite element calculation |
| 000F59 |
| Advanced InP Technology for High Performance 40 Gb/s (RZ-) DQPSK Transponder |
| 000F62 |
| A study of two-step growth and properties of In0.82Ga0.18As on InP |
| 001013 |
| Synthesis of high quality p-type Zn3P2 nanowires and their application in MISFETs |
| 001018 |
| Surface-recombination-free InGaAs/InP HBTs and the base contact recombination |
| 001021 |
| Surface and subsurface damages in nanoindentation tests of compound semiconductor InP |
| 001081 |
| Numerical simulation of liquid-encapsulant float zone growth of indium phosphide crystals in zero gravity |
| 001111 |
| Investigation of vacancy defect in InP crystal by positron lifetime measurement |
| 001210 |
| Common-base multi-finger submicron InGaAs/InP double heterojunction bipolar transistor with fmax of 305 GHz |
| 001224 |
| Annihilation of deep level defects in InP through high temperature annealing |
| 001241 |
| A complexant-assisted hydrothermal procedure for growing well-dispersed InP nanocrystals |
| 001258 |
| The use of electron backscatter diffraction to measure the elastic strain fields in a misfit dislocation-free InGaAsP/InP heterostructure |
| 001329 |
| Photoluminescence study of AlGaInP/GaInP quantum well intermixing induced by zinc impurity diffusion |
| 001404 |
| Experimental and numerical study on AlGaInAs/AlGaAs distributed feedback lasers with GaInP gratings |
| 001494 |
| A Novel Optical Fibre Doped with the Nano-material as InP |
| 001500 |
| Wavelength-selective photodetectors operating at long wavelength |
| 001557 |
| Role of deep traps in carrier generation and transport in differently doped InP wafers |
| 001559 |
| Recent advances in photonic integrated circuits |
| 001590 |
| Multiplication characteristics of InP/InGaAs avalanche photodiodes with a thicker charge layer |
| 001596 |
| Long wavelength integrated optical demultiplexing and receiving device based on one-mirror-inclined three-mirror cavity structure |
| 001609 |
| InGaP/GaAs heterojunction bipolar transistor grown by solid-source molecular beam epitaxy with a GaP decomposition source |
| 001618 |
| High performance of gated-mode single-photon detector at 1.55 μm |
| 001644 |
| Electron irradiation-induced defects in InP pre-annealed at high temperature |
| 001662 |
| Direct wafer bonding technology employing vacuum-cavity pre-bonding |
| 001669 |
| Designed formation of the stable adduct InP/CTAB/Clay |
| 001689 |
| Analysis and optimization of an InGaAsP/InP waveguide variable optical attenuator |
| 001695 |
| 10Gbps zero-chirp compact transmitter with InP MQW mach-zehnder modulator |
| 001696 |
| research on zinc diffusion in undoped InP |
| 001704 |
| Theoretical analysis of the bandgap for the intermixed Gainp/AlgaInP quantum wells |
| 001722 |
| Synthesis and characterization InP and Ga2O3 nanowires |
| 001741 |
| Simulation of InP-based monolithically integrated PIN-HEMT front-end optical receiver |
| 001798 |
| InGaAs/InGaAsP microavity laser with directional output waveguide |
| 001802 |
| Improved analytical method for determination of small-signal equivalent-circuit model parameters for InP/InGaAs HBTs |
| 001806 |
| High-volume production of 650nm GaInP/AlGaInP laser diodes |
| 001808 |
| High-performance InP-based resonant cavity enhanced photodetector based on InP/air-gap Bragg reflectors |
| 001835 |
| Dual wavelength 650-780nm laser diodes |
| 001836 |
| Direct extraction of InP HBT noise parameters based on noise-figure measurement system |
| 001846 |
| Comments on: Microwave noise modeling for InP-InGaAs HBTs. Authors' reply |
| 001850 |
| Calculation of valence subband structures for strained GaInP/AlGaInP quantum wells without axial approximation |
| 001852 |
| Applications of ICP in optoelectronic device fabrication |
| 001988 |
| MOVPE growth and fabrication of 1.3 μm high power InGaAsP-InP polarization-insensitive superluminescent diodes with complex strained quantum wells |
| 001A06 |
| High power polarization-insensitive 1.3 μm InGaAsP-InP quantum-well superluminescent emission diodes grown by MOVPE |
| 001A14 |
| Fabrication and complete characterization of polarization insensitive 1310 nm InGaAsP-InP quantum-well semiconductor optical amplifiers |
| 001B95 |
| High-performance enhancement-mode pseudomorphic InGaP/InGaAs/GaAs HEMT structures by gas source molecular beam epitaxy |
| 001B97 |
| High performances of InP/InGaAs heterojunction bipolar transistors with a δ-doped sheet between two spacer layers |
| 001C05 |
| Field-aided collection in GaInP2 top solar cells |
| 001C53 |
| 1.55 μm AlGaInAs/InP polarization-insensitive optical amplifier with tensile strained wells grown by MOCVD |
| 001D33 |
| Study of P-on-N GaINP2/GaAs tandem cells |
| 001D46 |
| Phase matching pseudo-resonant tunable InP-based MOEMS |
| 001E95 |
| Surface micromachining techniques in InP based micro-opto-electro-mechanical system |
| 001F13 |
| Photonic-sensitive InAlGaAs/InP negative-differential-resistance heterojunction bipolar transistor |
| 001F44 |
| Gsmbe growth of InGaP/(In)GaAs modulation-doped heterostructures and their applications to HEMT and HHMT |
| 002087 |
| Native oxided AlAs current blocking layer for AlGaInP high brightness light emitting diodes |
| 002141 |
| An InP-based monolithic integration of 1.55um MQW laser diode and HBT driver circuit |
| 002145 |
| A study on band-gap tailoring for InP based QW structure by ion implantation and plasma enhanced chemical vapor deposition |
| 002147 |
| 1.3 μm integrated superluminescent light source |
