| Ident. | Authors (with country if any) | Title |
|---|
| 000012 |
| Strain induced composition profile in InGaN/GaN core-shell nanowires |
| 000063 |
| Tunable Surface Electron Spin Splitting with Electric Double-Layer Transistors Based on InN |
| 000077 |
| The electronic and optical properties of InGaN-based solar cells alloys: First-principles investigations via mBJLDA approach |
| 000112 |
| Single intermediate-band solar cells of InGaN/InN quantum dot supracrystals |
| 000130 |
| Pressure based first-principles study of the electronic, elastic, optic and phonon properties of zincblende InN |
| 000158 |
| Performance Enhancement of Blue InGaN Light-Emitting Diodes With InGaN Barriers and Dip-Shaped Last Barrier |
| 000160 |
| Optical properties of InN films grown by pressurized-reactor metalorganic vapor phase epitaxy |
| 000161 |
| Optical and structural studies of dual wavelength InGaN/GaN tunnel-injection light emitting diodes grown by metalorganic chemical vapor deposition |
| 000185 |
| Low-temperature growth of InxGa1-xN films by radio-frequency magnetron sputtering |
| 000190 |
| Junction-Temperature Determination in InGaN Light-Emitting Diodes Using Reverse Current Method |
| 000195 |
| Investigation of blue InGaN light-emitting diodes with p-AlGaN/InGaN superlattice interlayer |
| 000222 |
| Improved photovoltaic performance of InGaN/GaN solar cells with optimized transparent current spreading layers |
| 000225 |
| Improved Quantum Efficiency in Semipolar (1101) InGaN/GaN Quantum Wells Grown on GaN Prepared by Lateral Epitaxial Overgrowth |
| 000257 |
| Fabrication of nanorod InGaN/GaN multiple quantum wells with self-assembled Ni nano-island masks |
| 000263 |
| Enhanced output power of (indium) gallium nitride light emitting diodes by a transparent current spreading-film composed of a disordered network of indium tin oxide nanorods |
| 000264 |
| Enhanced Ce3+ photoluminescence by Li+ co-doping in CaO phosphor and its use in blue-pumped white LEDs |
| 000294 |
| Determining Junction Temperature in InGaN Light-Emitting Diodes Using Low Forward Currents |
| 000304 |
| Continuous-Flow MOVPE of Ga-Polar GaN Column Arrays and Core-Shell LED Structures |
| 000324 |
| Analysis of Nonradiative Carrier Recombination Processes in InN Films by Mid-infrared Spectroscopy |
| 000338 |
| A new europium(III)-β-diketonate complex based on diphenylethyne as red phosphors applied in LED |
| 000351 |
| Wurtzite to zincblende transition of InN films on (011) SrTiO3 by decreasing trimethylindium flows |
| 000360 |
| Triple-period partial misfit dislocations at the InN/GaN (0001) interface: A new dislocation core structure for III-N materials |
| 000366 |
| The structural, elastic and thermodynamical properties of zinc-blend structure InN from first principles |
| 000381 |
| Tailoring the in-plane epitaxial relationship of InN films on (1 11)SrTiO3 substrates by substrate pretreatment |
| 000454 |
| Ordered versus random nucleation of InN islands grown by molecular beam epitaxy |
| 000481 |
| Lattice vibrations and optical properties of wurtzite InN in the reststrahlen region |
| 000494 |
| InN doped with Zn: Bulk and surface investigation from first principles |
| 000500 |
| Improving Light Output of Vertical-Stand-Type InGaN Light-Emitting Diodes Grown on a Free-Standing GaN Substrate With Self-Assembled Conical Arrays |
| 000518 |
| Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth |
| 000530 |
| Finite barrier width effects on exciton states and optical properties in wurtzite InGaN/GaN quantum well |
| 000560 |
| Electrical, spectral and optical performance of yellow-green and amber micro-pixelated InGaN light-emitting diodes |
| 000581 |
| Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition |
| 000605 |
| Chemical vapor deposition growth of InN nanostructures: Morphology regulation and field emission properties |
| 000623 |
| Analysis of Interface Scattering in AlGaN/GaN/InGaN/GaN Double-Heterojunction High-Electron-Mobility Transistors |
| 000656 |
| Ultrafast hot carrier dynamics in InN epitaxial films |
| 000664 |
| Theoretical study on critical thicknesses of InGaN grown on (0 0 0 1) GaN |
| 000712 |
| Stable structure and effects of oxygen on InN (1 0 1 0) and (1 1 2 0) surfaces |
| 000718 |
| Shallow-Deep InGaN Multiple-Quantum-Well System for Dual-Wavelength Emission Grown on Semipolar (1122) Facet GaN |
| 000729 |
| Raman scattering and Rutherford backscattering studies on InN films grown by plasma-assisted molecular beam epitaxy |
| 000736 |
| Preserving the half-metallicity at the surfaces of rocksalt CaN and SrN and the interfaces of CaN/InN and SrN/GaP: a density functional study |
| 000740 |
| Preparation and properties of Ni/InGaN/GaN Schottky barrier photovoltaic cells |
| 000745 |
| Polarized GaN-based light-emitting diode with an embedded metallic/dielectric subwavelength grating |
| 000785 |
| MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers |
| 000806 |
| Influence of the TEGa flow on the optical and structural properties of InGaN/GaN multiple quantum wells grown by MOCVD |
| 000822 |
| Improving p-type contact characteristics by Ni-assisted annealing and effects on surface morphologic evolution of InGaN LED films grown on Si ( 1 1 1 ) |
| 000823 |
| Improvement of structural and luminescence properties in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers |
| 000824 |
| Improvement of structural and electrical properties of Cu2O films with InN epilayers |
| 000827 |
| Hot-electron induced degradations in GaN-based LEDs fabricated on nanoscale epitaxial lateral overgrown layers |
| 000866 |
| Epitaxial Growth of High Quality Nonpolar InN Films on LiGaO2 Substrates |
| 000896 |
| Efficiency droop behavior of GaN-based light emitting diodes under reverse-current and high-temperature stress |
| 000905 |
| Effect of contact spreading layer on photovoltaic response of InGaN-based solar cells |
| 000919 |
| Development of free-standing InGaN LED devices on Al2O3/Si substrate by wet etching |
| 000922 |
| Dependence of the Property of InGaN p-i-n Solar Cells on the Light Concentration and Temperature |
| 000940 |
| Behavioural investigation of InN nanodots by surface topographies and phase images |
| 000987 |
| Thermal stable La2Ti2O7:Eu3+ phosphors for blue-chip white LEDs with high color rendering index |
| 000A36 |
| Structure and optical properties of InN and InAlN films grown by rf magnetron sputtering |
| 000A55 |
| Recent advances and challenges for successfu p-type control of InN films with Mg acceptor doping by molecular beam epitaxy |
| 000A56 |
| Rapid growth and characterization of InN nanocolumns on InGaN buffer layers at a low ratio of N/In |
| 000A68 |
| Photovoltaic Effects of InGaN/GaN Double Heterojunctions With p-GaN Nanorod Arrays |
| 000A93 |
| Magnetoresistance in a nominally undoped InGaN thin film |
| 000B24 |
| InN layers grown by MOCVD on SrTi03 substrates |
| 000B36 |
| High-pressure structural and electronic properties of InN |
| 000B38 |
| High Brightness GaN Light Emitting Diodes with Different Barrier Widths in Quantum Wells for General Lighting Application |
| 000B41 |
| Growth of pattern-free InN micropyramids by metalorganic chemical vapor deposition |
| 000B43 |
| Free-standing GaN-based LEDs with ALD-Al2O3/Si substrate removed by wet etching |
| 000B48 |
| First-principles study of Sr adsorption on InN (0001) |
| 000B55 |
| Fabrication of blue and green non-polar InGaN/GaN multiple quantum well light-emitting diodes on LiAIO2(100) substrates |
| 000B66 |
| Enhancement in light extraction efficiency from GaN based LEDs with nanopores ITO p-contact grown on patterned sapphire substrate |
| 000C23 |
| Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer |
| 000C37 |
| A study of indium incorporation in In-rich InGaN grown by MOVPE |
| 000C62 |
| Well-Aligned Zn-Doped InN Nanorods Grown by Metal-Organic Chemical Vapor Deposition and the Dopant Distribution |
| 000C81 |
| The properties of direct current sputtering deposited InN thin films under different gas flow rates |
| 000C83 |
| The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD |
| 000D17 |
| Suppression of indium droplet formation by adding CC14 during metalorganic chemical vapor deposition growth of InN films |
| 000D55 |
| Prospective important semiconducting nanotubes: synthesis, properties and applications |
| 000D85 |
| Optical properties studies in InGaN/GaN multiple-quantum well |
| 000E16 |
| Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition |
| 000E24 |
| Influence of a p-InGaN/GaN short-period superlattice on the performance of GaN-based light-emitting diodes |
| 000E34 |
| InGaN nanorod arrays grown by molecular beam epitaxy : Growth mechanism structural and optical properties |
| 000E59 |
| First-principles study of Mg incorporation at wurtzite InN (0 0 01 ) and (0001) surfaces |
| 000E60 |
| First-principles calculations on structure and elasticity of wurtzite-type indium nitride under pressure |
| 000E67 |
| Favourable photovoltaic effects in InGaN pin homojunction solar cell |
| 000F17 |
| Direct current magnetron sputtering deposition of InN thin films |
| 000F24 |
| Design and epitaxy of structural III-nitrides |
| 000F48 |
| Band Engineering in Strained GaN/ultrathin InN/GaN Quantum Wells |
| 000F82 |
| Weak Localization in Indium Nitride Films |
| 000F96 |
| Theoretical design and performance of InxGa1-xN two-junction solar cells |
| 001003 |
| The effect of electrical properties for InGaN and InN by high-energy particle irradiation |
| 001011 |
| Synthesis, optical and transport properties of single-crystal N-deficient InN nanowires |
| 001017 |
| Synthesis and luminescent properties of Sr4Al14O25:Eu2+ blue-green emitting phosphor for white light-emitting diodes (LEDs) |
| 001065 |
| Photoelectric characteristics of metal/InGaN/GaN heterojunction structure |
| 001067 |
| Phase transition, and elastic and thermodynamic properties of InN derived from first-principles and the quasi-harmonic Debye model |
| 001110 |
| Investigation on the structural origin of n-type conductivity in InN films |
| 001122 |
| Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching |
| 001126 |
| Hydrogenic impurity states in zinc-blende InGaN quantum dot |
| 001136 |
| Growth and characterization of the InN film ammonification technique |
| 001163 |
| Electron-phonon interaction effects on the surface states in wurtzite nitride semiconductors |
| 001174 |
| Electrical properties of InGaN grown by molecular beam epitaxy |
| 001214 |
| Characterization of a-plane InN film grown on r-plane sapphire by MOCVD |
| 001216 |
| Cathodoluminescence study of GaN-based film structures |
| 001217 |
| Built-in electric field effect on the linear and nonlinear intersubband optical absorptions in InGaN strained single quantum wells |
| 001218 |
| Built-in electric field effect on the hydrogenic donor impurity in wurtzite InGaN quantum dot |
| 001274 |
| The characteristics of GaN-based blue LED on Si substrate |
| 001296 |
| Study of polarization field in GaN-based blue LEDs on Si and sapphire substrate by electroluminescence |
| 001308 |
| Simulation of In0.65Ga0.35 N single-junction solar cell |
| 001326 |
| Photovoltaic effects in InGaN structures with p-n junctions |
| 001362 |
| Luminescence degradation of InGaN/GaN violet LEDs |
| 001409 |
| Enhanced output of flip-chip light-emitting diodes with a sidewall reflector |
| 001510 |
| Thermal kinetic analysis of InN by TG-MS combined with PulseTA |
| 001511 |
| Thermal behavior of nitrided TiO2/In2O3 by TG-DSC-MS combined with PulseTA |
| 001512 |
| Theoretical study of phase separation in wurtzite InGaN |
| 001553 |
| Simulation of InGaN/GaN multiple quantum well light-emitting diodes with quantum dot model for electrical and optical effects |
| 001561 |
| Quadratic electro-optic effects and electro-absorption process in InGaN/GaN cylinder quantum dots |
| 001758 |
| Polarization dependent characteristics of a resonant cavity enhanced photodetector |
| 001997 |
| InGaN/GaN multi-quantum dot light-emitting diodes |
| 001B89 |
| InGaN/GaN MQW high brightness LED grown by MOCVD |
| 001D73 |
| Fabrication of high-brightness blue InGaN/GaN MQW LEDs |
