| Ident. | Authors (with country if any) | Title |
|---|
| 000193 |
| Investigation of copper indium gallium selenide material growth by selenization of metallic precursors |
| 000308 |
| Compositionally undulating step-graded InAsyP1-y buffer layer growth by metal-organic chemical vapor deposition |
| 000345 |
| A Chiral Tetrahedral Framework with Tetrahedral Guests for Catalysis and Photoluminescence |
| 000573 |
| Effects of AlN interlayer on the transport properties of nearly lattice-matched InAIN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition |
| 000717 |
| Shape and crystal phase controlled synthesis of InSe nanocrystals via a simple and facile way |
| 000837 |
| High quality InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition |
| 000B27 |
| In2O3 nanorod arrays grown at grain-boundary triple junctions of Cu-Sn alloy substrate |
| 000D67 |
| Precise growth control and characterization of strained AlInAs and GaInAs for quantum cascade lasers by GSMBE |
| 000D97 |
| New indium selenite-oxalate and indium oxalate with two-and three-dimensional structures |
| 001124 |
| Hydrothermal Synthesis and Crystal Structure of Polar and Nonpolar Compounds in Indium Iodate Family |
| 001265 |
| The high mobility InN film grown by MOCVD with GaN buffer layer |
| 001420 |
| Electronic band structures and transport properties of wurtzite indium nitride grown by metalorganic vapor phase epitaxy |
| 001872 |
| Investigations on V-defects in quaternary AlInGaN epilayers |
| 001873 |
| Improvements of InGaN/GaN quantum-well interfaces and radiative efficiency with InN interfacial layers |
| 001874 |
| Controlled carbon nanotube sheathing on ultrafine InP nanowires |
| 001876 |
| Luminescence efficiency of InGaN multiple-quantum-well ultraviolet light-emitting diodes |
| 001878 |
| 20 meV-deep donor level in InN film of 0.76 eV band gap grown by plasma-assisted nitrogen source |
| 001879 |
| Ultrafast valence intersubband hole relaxation in InGaN multiple-quantum-well laser diodes |
| 001881 |
| Electroluminescent Studies of Emission Characteristics of InGaAsN/GaAs Injection Lasers in a Wide Temperature Range |
| 001883 |
| Effect of dye concentration on the charge carrier transport in molecularly doped organic light-emitting diodes |
| 001884 |
| Cluster size and composition variations in yellow and red light-emitting InGaN thin films upon thermal annealing |
| 001886 |
| Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature |
| 001887 |
| Double-transconductance-plateau characteristics in InGaAs/GaAs real-space transfer high-electron-mobility transistor |
| 001888 |
| Study of lateral-carrier transport in InAs quantum-dot heterostructures by optical spectroscopy |
| 001889 |
| Study of AlGaInP multiquantum-well/double heterostructure light-emitting diodes with In-added GaP window layer regrown by antimony-based liquid phase epitaxy |
| 001890 |
| InGaN/AlGaN near-ultraviolet multiple quantum well light-emitting diodes with p-InGaN tunneling contact layer |
| 001891 |
| Growth of InGaN self-assembled quantum dots and their application to photodiodes |
| 001893 |
| Characterization of Large-Area AlGaInP/Mirror/Si Light-Emitting Diodes Fabricated by Wafer Bonding |
| 001894 |
| Deep-ultraviolet emission from an InGaAs semiconductor laser |
| 001895 |
| Electron blocking and hole injection: The role of N,N′-Bis(naphthalen-1-y)-N,N′-bis(phenyl)benzidine in organic light-emitting devices |
| 001896 |
| On the origin of spin loss in GaMnN/InGaN light-emitting diodes |
| 001897 |
| Observation of coherent interfacial optical phonons in GaInP/GaAs/GaInP single quantum wells |
| 001898 |
| Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions |
| 001899 |
| Reduction in Turn-on Voltage in GaInNAs and InGaAs-Based Double-Heterojunction Bipolar Transistors |
| 001900 |
| InGaN/GaN Multi-Quantum Well Metal-Insulator Semiconductor Photodetectors with Photo-CVD SiO2 Layers |
| 001901 |
| InGaN/GaN Light Emitting Diodes with a Lateral Current Blocking Structure |
| 001902 |
| CuPc/C60 Solar Cells-Influence of the Indium Tin Oxide Substrate and Device Architecture on the Solar Cell Performance |
| 001903 |
| Mapping of multiple-quantum-well layers and structure of V defects in InGaN/GaN diodes |
| 001904 |
| Interpretation of anomalous temperature dependence of anti-Stokes photoluminescence at GaInP2/GaAs interface |
| 001905 |
| Landau level structures and semimetal-semiconductor transition in strained InAs/GaSb quantum wells |
| 001906 |
| High-power AlGaInP light-emitting diodes with metal substrates fabricated by wafer bonding |
| 001907 |
| Dynamical conductance through InAs/GaSb/InAs and InAs/AlSb/GaSb/AlSb/InAs structures |
| 001909 |
| Synthesis of InN/InP core/sheath nanowires |
| 001910 |
| Mechanism of enhanced luminescence in InxAlyGa1-x-yN quaternary epilayers |
| 001911 |
| Study of InGaP/InGaAs double delta-doped channel heterostructure field-effect transistors |
| 001912 |
| Phonon-Assisted Auger Recombination Processes in InGaAs/GaAs Single-Quantum-Well Lasers |
| 001913 |
| Electrical Properties of Melt-Epitaxy-Grown InAs0.04Sb0.96 Layers with Cutoff Wavelength of 12 μm |
| 001914 |
| Observation of spontaneous ordering in the optoelectronic material GaInNP |
| 001915 |
| Comment on Piezoelectric effect on Al0.35-δInδGa0.65N/GaN heterostructures [Appl. Phys. Lett. 80, 2684 (2002)] |
| 001916 |
| Electroreflectance study on the polarization field in InGaN/AlInGaN multiple quantum wells |
| 001917 |
| Ultra-High-Density InGaN Quantum Dots Grown by Metalorganic Chemical Vapor Deposition |
| 001918 |
| One-polymer active pixel |
| 001929 |
| The first indium-organic two-dimensional layer network with rhombus grids |
| 001939 |
| Synthesis and Characterization of Single-Crystalline In2O 3 Nanocrystals via Solution Dispersion |
| 001A51 |
| 1.57-μm InP-based resonant-cavity-enhanced photodetector with InP/AIR-gap Bragg reflectors |
| 001A52 |
| Breakdown characteristics of InP/InGaAs composite-collector double heterojunction bipolar transistor |
| 001A54 |
| InN island shape and its dependence on growth condition of molecular-beam epitaxy |
| 001A55 |
| Electronic properties of GaAs/GayIn1-yNxAs1-y-xSby superlattices |
| 001A56 |
| Comparison of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes with/without GaInAsP and AIGaInAs Graded-Composition Layers |
| 001A57 |
| Interband Impact Ionization and Nonlinear Absorption of Terahertz Radiation in Semiconductor Heterostructures |
| 001A58 |
| Enhancement of room-temperature photoluminescence in InAs quantum dots |
| 001A59 |
| Electron-beam-induced current and cathodoluminescence characterization of InGaAs strain-balanced multiquantum well photovoltaic cells |
| 001A60 |
| Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31 |
| 001A61 |
| Magnetic properties of parabolic quantum dots in the presence of the spin-orbit interaction |
| 001A62 |
| Investigation of InGaP/GaAs heterojunction bipolar transistor with doping graded base |
| 001A63 |
| Comparative hydrogen sensing performances of Pd- and Pt-InGaP metal-oxide-semiconductor Schottky diodes |
| 001A64 |
| Response to Comment on AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy [Appl. Phys. Lett. 83, 3626 (2003)] |
| 001A65 |
| Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n-GaN layers |
| 001A66 |
| Scaling of three-dimensional InN islands grown on GaN(0001) by molecular-beam epitaxy |
| 001A67 |
| Ordering effects on optical transitions in GaxIn1-xP/(Al0.66Ga0.34)yIn1-yP quantum wells studied by photoluminescence and reflectivity spectroscopy |
| 001A68 |
| Optical properties of p-type In-doped SrTiO3 thin films |
| 001A69 |
| Improving the Performance of AlGaInP Laser Diode by Oxide Annealing |
| 001A71 |
| Multiple negative differential resistance of InP/InGaAs superlattice-emitter resonant-tunneling bipolar transistor at room temperature |
| 001A72 |
| Properties of Cu/Au Schottky contacts on InGaP layer |
| 001A74 |
| Piezoelectric, electro-optical, and photoelastic effects in InxGa1-xN/GaN multiple quantum wells |
| 001A76 |
| Absorption of surface acoustic waves by a two-dimensional electron gas in the presence of spin-orbit interaction |
| 001A78 |
| Capacitance Characteristics in InN Thin Films Grown by Reactive Sputtering on GaAs |
| 001A79 |
| Large electric-field induced electron drift velocity observed in an InxGa1-xAs-based p-i-n semiconductor nanostructure at T=300 K |
| 001A80 |
| Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths |
| 001A81 |
| Highly strained 1.24-μm InGaAs/GaAs quantum-well lasers |
| 001A84 |
| Transport characteristics of InAs/GaAs quantum-dot infrared photodetectors |
| 001A85 |
| Room-temperature ultraviolet-emitting In2O3 nanowires |
| 001A87 |
| AlGaInP Light Emitting Diode with a Modulation-Doped Superlattice |
| 001A88 |
| Thermal property of tunnel-regenerated multiactive-region light-emitting diodes |
| 001A89 |
| Effect of InGaAs capping layer on the properties of InAs/InGaAs quantum dots and lasers |
| 001A90 |
| Surface band-bending effects on the optical properties of indium gallium nitride multiple quantum wells |
| 001A91 |
| Very Low Threshold Current Operation of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes |
| 001A92 |
| Quantum-well-width dependencies of postgrowth thermal annealing effects of InGaN/GaN quantum wells |
| 001A93 |
| Temperature dependence of photoreflectance in InAs/GaAs quantum dots |
| 001A94 |
| Observation of self-organized superlattice in AlGaInAsSb pentanary alloys |
| 001A96 |
| Optical Degradation of Indium Tin Oxide Thin Films Induced by Hydrogen-Related Room Temperature Reduction |
| 001A97 |
| Enhanced spontaneous emission from InAs/GaAs self-organized quantum dots in a GaAs photonic-crystal-based microcavity |
| 001A99 |
| Characteristics of a field-effect transistor with stacked InAs quantum dots |
| 001B00 |
| Effect of current spreading on luminescence improvement in selectively oxidized AlGaInP light-emitting diodes |
| 001B01 |
| Depletion- and enhancement-mode In0.49Ga0.51P/InGaAs/AlGaAs high-electron-mobility transistors with high-breakdown voltage |
| 001B05 |
| Persistent photoconductivity in InxAlyGa1-x-yN quaternary alloys |
| 001B06 |
| In0.6Ga0.4As/GaAs quantum-dot infrared photodetector with operating temperature up to 260 K |
| 001B07 |
| Spectral analysis of high-harmonic coherent acoustic phonons in piezoelectric semiconductor multiple quantum wells |
| 001B08 |
| Strong green luminescence in quaternary InAlGaN thin films |
| 001B09 |
| Tunneling through InAs quantum dots in AlGaAs/GaAs double barrier resonant tunneling diodes with InGaAs quantum well emitters |
| 001B10 |
| Differential surface photovoltage spectroscopy characterization of a 1.3 μm InGaAlAs/InP vertical-cavity surface-emitting laser structure |
| 001B11 |
| Comparison of p-Side Down and p-Side Up GaN Light-Emitting Diodes Fabricated by Laser Lift-Off |
| 001B12 |
| Converse piezoelectric effect and photoelastic effect in InGaN/GaN multiple quantum wells |
| 001B13 |
| Mode splitting in photoluminescence spectra of a quantum-dot-embedded microcavity |
| 001B14 |
| Formation and structure of inverted hexagonal pyramid defects in multiple quantum wells InGaN/GaN |
| 001B15 |
| Atomic-scale strain field and In atom distribution in multiple quantum wells InGaN/GaN |
| 001B17 |
| Forbidden transitions and the effective masses of electrons and holes in In1-xGaxAs/InP quantum wells with compressive strain |
| 001B18 |
| Study on dc characteristics of an interesting InP/InGaAs tunneling-emitter bipolar transistor with double heterostructures |
| 001B19 |
| Kinetics of picosecond laser pulse induced charge separation and proton transfer in bacteriorhodopsin |
| 001B28 |
| The gas sensing characteristics of ITO thin film prepared by sol-gel method |
| 001B64 |
| Photo-induced Orientation of a Film of Ladderlike Polysiloxane Bearing Dual Photoreactive Side Groups |
| 001B79 |
| Metastable hexagonal In2O3 nanofibers templated from InOOH nanofibers under ambient pressure |
| 001C55 |
| Hole emission processes in InAs/GaAs self-assembled quantum dots |
| 001C56 |
| Growth of High-Quality Epitaxial InN Film with High-Speed Reactant Gas by Organometallic Vapor-Phase Epitaxy |
| 001C57 |
| Localized and quantum-well state excitons in AlInGaN laser-diode structure |
| 001C58 |
| Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures |
| 001C60 |
| Self-assembled GaAs antiwires in In0.53Ga0.47As matrix on (100) InP substrates |
| 001C61 |
| Strong Screening Effect of Photo-Generated Carriers on Piezoelectric Field in In0.13Ga0.87N/In0.03Ga0.97N Quantum Wells |
| 001C62 |
| Metallic wafer bonding for the fabrication of long-wavelength vertical-cavity surface-emitting lasers |
| 001C63 |
| Enhanced hole injections in organic light-emitting devices by depositing nickel oxide on indium tin oxide anode |
| 001C64 |
| Band-Gap Bowing Parameter of the AlxIn1-xN Derived from Theoretical Simulation |
| 001C66 |
| Strain-induced semimetal-semiconductor transition in InAs/GaSb broken-gap quantum wells |
| 001C68 |
| Degree of ordering in Al0.5In0.5P by Raman scattering |
| 001C69 |
| Deep levels in semi-insulating InP obtained by annealing under iron phosphide ambiance |
| 001C70 |
| Polaron model in self-assembled InAs/GaAs quantum dots- A perturbative approach |
| 001C73 |
| Wavelength of Emission from InGaAsN Quantum Wells as a Function of Composition of the Quaternary Compound |
| 001C74 |
| Photoreflectance and photoluminescence spectroscopy of the lattice-matched InGaAs/InAlAs single quantum well |
| 001C75 |
| Ordering parameter and band-offset determination for ordered GaxIn1-xP/(Al0.66Ga0.34)yIn1-yP quantum wells |
| 001C76 |
| Microstructure evolution and failure mechanism for Cu/Au Schottky contacts to InGaP layer |
| 001C77 |
| Investigation of transparent and conductive undoped Zn2In2O5-x films deposited on n-type GaN layers |
| 001C78 |
| Effect of InGaP Barrier Thickness on the Performance of 1.3-μm InAsP/InP/InGaP Strain-Compensated Multiple-Quantum-Well Laser Diodes |
| 001C79 |
| Multiple-component photoluminescence decay caused by carrier transport in InGaN/GaN multiple quantum wells with indium aggregation structures |
| 001C80 |
| Integral and fractional charge filling in a InAs/GaAs quantum dot p-i-n diode by capacitance-voltage measurement |
| 001C81 |
| Photoluminescence study of hydrogen passivation in InAs1-xNx/InGaAs single-quantum well on InP |
| 001C82 |
| Thickness-dependent renormalization of strain effects on self-organized InAs quantum dots grown on GaAs |
| 001C83 |
| Study of InGaP/GaAs/InGaAs high-barrier gate and heterostructure-channel field-effect transistors |
| 001C84 |
| High-density plasma-induced etch damage of wafer-bonded AlGaInP/mirror/Si light-emitting diodes |
| 001C85 |
| Growth and coalescence evolution of InAs on GaAs by molecular beam epitaxy |
| 001C86 |
| Extended radio frequency nonlinear model for power prediction of AlGaAs/InGaAs pseudomorphic high electron mobility transistors |
| 001C87 |
| 1.3 μm InAsP multiquantum well laser diodes with the n-type modulation-doped InAsP/InP/InGaP active region |
| 001C88 |
| Zero-field spin splitting in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates using Shubnikov-de Haas measurements |
| 001C90 |
| Piezoelectric effect on Al0.35-δInδGa0.65N/GaN heterostructures |
| 001C92 |
| Quasiregular quantum-dot-like structure formation with postgrowth thermal annealing of InGaN/GaN quantum wells |
| 001C93 |
| Few-electron filling effect in laterally coupled spherical InAs/GaAs quantum-dot system |
| 001C94 |
| Scanning electron filling modulation reflectance of charged InGaAs self-assembled quantum dot |
| 001C95 |
| Fe-Diffusion-Induced Defects in InP Annealed in Iron Phosphide Ambient |
| 001C96 |
| Real index-guided InGaAlP red lasers with buried tunnel junctions |
| 001C97 |
| Mechanism of enhanced luminescence in InxAlyGa1-x-yN quaternary alloys |
| 001C99 |
| Sulphur passivation of the InGaAsSb/GaSb photodiodes |
| 001D00 |
| Effect of composition inhomogeneity on the photoluminescence of InGaN/GaN multiple quantum wells upon thermal annealing |
| 001D01 |
| Ohmic contacts to p-type GaN mediated by polarization fields in thin InxGa1-xN capping layers |
| 001D02 |
| Nitrogen-induced enhancement of the electron effective mass in InNxAs1-x |
| 001D04 |
| Investigation of the thermal degradation mechanism for Cu/Au Schottky contacts to the InGaP layer |
| 001D05 |
| Characteristics of δ-doped InP heterostructures using In0.34Al0.66As0.85Sb0.15 Schottky layer |
| 001D07 |
| InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular-beam epitaxy |
| 001D08 |
| Low-Voltage-Operation High-Power-Density AlGaAs/InGaAs Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistor for Personal Handy-Phone Handset Application |
| 001D09 |
| Selective growth of single InAs quantum dots using strain engineering |
| 001D10 |
| Enhanced performance of organic light-emitting devices by atmospheric plasma treatment of indium tin oxide surfaces |
| 001D11 |
| Direct measurement of piezoelectric field in In0.23Ga0.77N/GaN multiple quantum wells by electrotransmission spectroscopy |
| 001E13 |
| Temperature-dependent contactless electroreflectance and photoluminescence study of GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures |
| 001E14 |
| Optical properties of as-grown and annealed InAs(N)/InGaAsP strained multiple quantum wells |
| 001E15 |
| InAs/GaAs single-electron quantum dot qubit |
| 001E16 |
| Hybridization of electron, light-hole, and heavy-hole states in InAs/GaSb quantum wells |
| 001E17 |
| Comparison of InAs/GaAs Quantum Dot Infrared Photodetector and GaAs/(AlGa)As Superlattice Infrared Photodetector |
| 001E18 |
| Deep Hole Traps Created by Gamma-Ray Irradiation of GaInP |
| 001E19 |
| Correlation of Photoreflectance Spectra with Performance of GaInP/GaAs Heterojunction Bipolar Transistors |
| 001E20 |
| Comparison of InGaP/InGaAs/GaAs and InGaP/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistors |
| 001E21 |
| Phonon-induced photoconductive response in doped semiconductors |
| 001E22 |
| Effects of In and Ga interdiffusion on the optical gain of InGaN/GaN quantum well |
| 001E23 |
| Polarized-photoreflectance characterization of an InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor structure |
| 001E26 |
| Tunnel-regenerated multiple-active-region light-emitting diodes with high efficiency |
| 001E27 |
| Low-resistance and high-transparency Ni/indium tin oxide ohmic contacts to p-type GaN |
| 001E28 |
| Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys |
| 001E29 |
| Subband electron properties of highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates |
| 001E30 |
| Charging of embedded InAs self-assembled quantum dots by space-charge techniques |
| 001E32 |
| Influence of Barrier Growth Temperature on the Properties of InGaN/GaN Quantum Well |
| 001E33 |
| Gamma-Ray Induced Deep Electron Traps in GaInP |
| 001E34 |
| Vibrational and photoemission study of the interface between phenyl diamine and indium tin oxide |
| 001E35 |
| Surface analysis of (NH4)2Sx-treated InGaN using x-ray photoelectron spectroscopy |
| 001E36 |
| Enhanced luminance of ZnGa2O4 phosphor by In2O3 doping |
| 001E37 |
| Longitudinal optic phonon-plasmon coupling in δ-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates |
| 001E38 |
| Thermal redistribution of photocarriers between bimodal quantum dots |
| 001E39 |
| Thermal-Treatment Induced Deep Electron Traps in AlInP |
| 001E41 |
| Improved n+-GaAs/p+-In0.49Ga0.51P/n-GaAs camel-like gate structure for high-breakdown, low-leakage, and high-temperature applications |
| 001E42 |
| Random telegraph noise in the photoluminescence of individual GaxIn1-xAs quantum dots in GaAs |
| 001E43 |
| High-Power 1.5 μm InGaAsP/InP Strained Quantum Wells Integrated Superluminescent Light Source with Tilted Structure |
| 001E44 |
| Direct-Gap Reduction and Valence-Band Splitting of Ordered Indirect-Gap AlInP2 Studied by Polarized Piezoreflectance |
| 001E45 |
| Etching trenches to effectively create electron quantum wires for single-electron-transistor applications |
| 001E46 |
| Temperature dependence of the radiative recombination zone in InGaN/GaN multiple quantum well light-emitting diodes |
| 001E48 |
| Investigation of indium tin oxide/zinc oxide multilayer ohmic contacts to n-type GaN isotype conjunction |
| 001E49 |
| Effect of thermal annealing on high indium content InGaN/GaN single quantum well structures |
| 001E51 |
| Band-Gap Bowing Parameter of the InxGa1-xN Derived From Theoretical Simulation |
| 001E52 |
| Comparison of optical transitions in InGaN quantum well structures and microdisks |
| 001E53 |
| High-performance InAs/GaAs quantum-dot infrared photodetectors with a single-sided Al0.3Ga0.7As blocking layer |
| 001E54 |
| GaN and InGaN Metal-Semiconductor-Metal Photodetectors with Different Schottky Contact Metals |
| 001E55 |
| Near-room-temperature operation of an InAs/GaAs quantum-dot infrared photodetector |
| 001E57 |
| Nanoscale surface electrical properties of indium-tin-oxide films for organic light emitting diodes investigated by conducting atomic force microscopy |
| 001E58 |
| Evolution of island-pit surface morphologies of InAs epilayers grown on GaAs (001) substrates |
| 001E59 |
| Electroluminescence at silicon band gap energy from mechanically pressed indium-tin-oxide/Si contact |
| 001E60 |
| Quantum-confined Stark shift in electroreflectance of InAs/InxGa1-xAs self-assembled quantum dots |
| 001E62 |
| Threshold characteristics of 1.55-μm InGaAs/InGaAsP strain-compensated quantum well lasers with zero net strain |
| 001E63 |
| Microtwin formation mechanism in GaP/AlGaInP/GaAs double heterostructure light-emitting diodes |
| 001E64 |
| Coherent optical control of acoustic phonon oscillations in InGaN/GaN multiple quantum wells |
| 001E65 |
| Temperature invariant lasing and gain spectra in self-assembled GaInAs quantum wire Fabry-Perot lasers |
| 001E67 |
| Surface Passivation Using P2S5/(NH4)2Sx and Hydrogen Fluoride Solutions on Ag/n-InAs and Ag/n-InSb Schottky Diodes |
| 001E68 |
| Phosphorus-Species-Induced Band-Gap Anomaly in InGaP Grown by Solid-Source Molecular-Beam Epitaxy |
| 001E69 |
| Piezoelectric-field-enhanced lateral ambipolar diffusion coefficient in InGaN/GaN multiple quantum wells |
| 001E70 |
| Characteristics of monolithically integrated two-wavelength laser diodes with aluminum-free active layers |
| 001E71 |
| Persistent photoconductivity in InGaN/GaN multiquantum wells |
| 001E72 |
| Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells |
| 001E74 |
| Temperature Dependence of Gate Current and Breakdown Behaviors in an n+-GaAs/p+-InGaP/n--GaAs High-Barrier Gate Field-Effect Transistor |
| 001E75 |
| An Improved In0.34Al0.66As0.85Sb0.15/InP Heterostructure Utilizing Coupled δ-Doping InP Channel |
| 001E76 |
| Visible and band edge electroluminescence from indium tin oxide/SiO2/Si metal-oxide-semiconductor structures |
| 001E78 |
| Growth of InAsN/InGaAs(P) quantum wells on InP by gas source molecular beam epitaxy |
| 001F85 |
| Influence of dual incorporation of In and N on the luminescence of GaInNAs/GaAs single quantum wells |
| 001F86 |
| Stimulated-emission spectra of high-indium-content InGaN/GaN multiple-quantum-well structures |
| 001F88 |
| Electron distribution and level occupation in an ensemble of InxGa1-xAs/GaAs self-assembled quantum dots |
| 001F89 |
| Theoretical Analysis of Polarization Insensitive InGaAsP Multiple-Quantum-Wells Eletroabsorption Modulators with Negative Chirp |
| 001F91 |
| Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells |
| 001F92 |
| Carrier distribution and relaxation-induced defects of InAs/GaAs quantum dots |
| 001F93 |
| Study of current leakage in InAs p-i-n photodetectors |
| 001F94 |
| Investigation of mesa-sidewall effects on direct current and radio frequency characteristics of Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In0.49P pseudomorphic high electron mobility transistors |
| 001F95 |
| Mechanism for photoluminescence in an InyAs1-yN/InxGa1-xAs single quantum well |
| 001F96 |
| High-Temperature Breakdown Characteristics of δ-Doped In0.49Ga0.51P/GaAs/In0.25Ga0.75As/AlGaAs High Electron Mobility Transistor |
| 001F97 |
| X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices |
| 001F98 |
| InP (110) by Time-resolved XPS |
| 001F99 |
| Detection of terahertz radiation from longitudinal optical phonon-plasmon coupling modes in InSb film using an ultrabroadband photoconductive antenna |
| 002000 |
| Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots |
| 002001 |
| Influence of InxGa1-xAs (0≤x≤0.3) Cap Layer on Structural and Optical Properties of Self-assembled InAs/GaAs Quantum Dots |
| 002002 |
| Ellipsometric Study of the Optical Properties of InGaAsN Layers |
| 002003 |
| Electron saturation velocity of GaInP deduced in a GaInP/GaAs/GaInP double heterojunction bipolar transistor |
| 002005 |
| Anomalous Phosphorus Cracker Temperature-Dependent Photoluminescence Spectra of InGaP Grown by Solid Source Molecular Beam Epitaxy |
| 002006 |
| Room temperature polarized photoreflectance characterization of GaAlAs/InGaAs/GaAs high electron mobility transistor structures including the influence of strain relaxation |
| 002007 |
| Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy |
| 002008 |
| Photoelectrochemical etching of InxGa1-xN |
| 002009 |
| Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells |
| 002010 |
| Mechanism of luminescence in InGaN/GaN multiple quantum wells |
| 002011 |
| Phosphorus Vacancy as a Deep Level in AlInP Layers |
| 002012 |
| Magneto-Photoluminescence Study of InGaAs/GaAs Quantum Wells and Quantum Dots Grown on (111)B GaAs Substrate |
| 002013 |
| Tuning of conduction intersublevel absorption wavelengths in (In,Ga)As/GaAs quantum-dot nanostructures |
| 002014 |
| Effect of growth temperature on the electric properties of In0.12Ga0.88As/GaAs p-i-n multiple-quantum-well diodes |
| 002017 |
| In0.34Al0.66As0.85Sb0.15/δ(n+)-InP heterostructure field-effect transistors |
| 002019 |
| Ga0.5In0.5P Barrier Layer for Wet Oxidation of AlAs |
| 002021 |
| Passivation mechanism analysis of sulfur-passivated InGaP surfaces using x-ray photoelectron spectroscopy |
| 002024 |
| Erasing Mechanisms of Ag-In-Sb-Te Compact Disk (CD)-Rewritable |
| 002025 |
| Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures |
| 002026 |
| Strain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wire |
| 002027 |
| Spin splitting in pseudomorphic InxGa1-xAs/InyAl1-yAs graded heterostructures |
| 002028 |
| Electron transport in the AlGaAs/InGaAs double-heterostructure pseudomorphic high-electron-mobility transistor |
| 002029 |
| Voltage and frequency dependence of differential capacitance in relaxed In0.2Ga0.8As/GaAs schottky diodes |
| 002031 |
| Characteristics of InGaP/GaAs delta-doped heterojunction bipolar transistor |
| 002032 |
| Accurate determination of quasi-Fermi-level separation of semiconductor lasers |
| 002033 |
| Accurate determination of quasi-Fermi-level separation of semiconductor lasers |
| 002034 |
| Wide angle distributed Bragg reflectors for 590 nm amber AlGaInP light-emitting diodes |
| 002035 |
| Experimental determination of local Strain effect on InAs/GaAs self-organized quantum dots |
| 002037 |
| Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing |
| 002038 |
| Strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures by x-ray diffraction and photoluminescence |
| 002039 |
| Carrier depletion by defects levels in relaxed In0.2Ga0.8As/GaAs quantum-well Schottky diodes |
| 002040 |
| Stimulated emission study of InGaN/GaN multiple quantum well structures |
| 002041 |
| Coherent Acoustic Phonon Oscillations in Semiconductor Multiple Quantum Wells with Piezoelectric Fields |
| 002043 |
| Abnormal temperature dependence of band-gap energies observed in (InAs)/(GaAs) and (InP)/(GaP) superlattices with strong lateral composition modulation |
| 002062 |
| Study of AlGaAsSb/InGaAsSb strained quantum well grown by molecular beam epitaxy on GaSb(100) |
| 002086 |
| Optical and recording properties of short wavelength optical storage materials |
| 002149 |
| GaInAsSb/InP heterojunction band offset: Measurement by absorption spectroscopy |
| 002150 |
| Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/InxGa1-xAs/GaAs pseudomorphic transistors |
| 002151 |
| Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/InxGa1-xAs/GaAs pseudomorphic transistors |
| 002152 |
| Barrier height enhancement of Ni/n-type InP Schottky contact using a thin praseodymium interlayer |
| 002153 |
| Barrier height enhancement of Ni/n-type InP Schottky contact using a thin praseodymium interlayer |
| 002154 |
| Barrier height enhancement of Ag/n-GaAs and Ag/n-InP Schottky diodes prepared by P2S5/(NH4)2Sx and HF treatments |
| 002155 |
| High-speed and high-power 1.3 μm InGaAsP/InP selective proton-bombarded buried crescent lasers with optical field attenuation regions |
| 002156 |
| Low-leakage current and high-breakdown voltage GaAs-based heterostructure field-effect transistor with In0.5(Al0.66Ga0.34)0.5P Schottky layer |
| 002157 |
| Positive and negative persistent photoconductivity in a two-side-doped In0.53Ga0.47As/In0.52Al0.48As quantum well |
| 002158 |
| AlGaInP light-emitting diodes with mirror substrates fabricated by wafer bonding |
| 002159 |
| Persistent photoconductivity in InGaP/GaAs heterostructures |
| 002160 |
| Arsenic clusters on the surface of vertically aligned InAs islands on GaAs substrate by annealing |
| 002161 |
| Strain effect on the band structure of InAs/GaAs quantum dots |
| 002162 |
| Influence of growth temperature of InAsP/InP strained multiple quantum wells grown by metalorganic chemical vapor deposition |
| 002163 |
| Application of an AlGaAs/GaAs/InGaAs heterostructure emitter for a resonant-tunneling transistor |
| 002164 |
| Observation of carrier depletion and emission effects on capacitance dispersion in relaxed In0.2Ga0.8As/GaAs quantum wells |
| 002165 |
| Band gap state formation in InP (110) induced by 10 and 100 eV argon ion bombardment |
| 002166 |
| Investigation of low-temperature deposition of silicon dioxide on indium phosphide by liquid phase deposition |
| 002167 |
| Positive and negative persistent photoconductivities in semimetallic AlxGa1-xSb/InAs quantum wells |
| 002168 |
| A high-temperature thermodynamic model for metalorganic vapor phase epitaxial growth of InGaN |
| 002169 |
| High breakdown voltage symmetric double δ-doped In0.49Ga0.51P/In0.25Ga0.75As/GaAs high electron mobility transistor |
| 002170 |
| Growth and postgrowth rapid thermal annealing of InAsN/InGaAs single quantum well on InP grown by gas source molecular beam epitaxy |
| 002171 |
| Large coherent acoustic-phonon oscillation observed in InGaN/GaN multiple-quantum wells |
| 002172 |
| Organometallic vapor phase epitaxy growth and optical characteristics of almost 1.2 μm GaInNAs three-quantum-well laser diodes |
| 002173 |
| Observation of abnormal capacitance-frequency behavior in In0.12Ga0.88As/GaAs p-i-n superlattice grown at low temperature |
| 002174 |
| A dopant-related defect in Te-doped AlInP |
| 002175 |
| Determination of surface state density for GaAs and InAlAs by room temperature photoreflectance |
| 002176 |
| Characterization of treated indium-tin-oxide surfaces used in electroluminescent devices |
| 002177 |
| Applications of an In0.53Ga0.25Al0.22As/InP continuous-conduction-band structure for ultralow current operation transistors |
| 002178 |
| Electron-filling modulation reflectance in charged self-assembled InxGa1-xAs quantum dots |
| 002179 |
| Measurement of AlInAsSb/GaInAsSb heterojunction band offset by photoluminescence spectroscopy |
| 002180 |
| AlGaInP/AuBe/glass light-emitting diodes fabricated by wafer bonding technology |
| 002181 |
| Observation of the impulse-like negative-differential resistance of superlatticed resonant-tunneling transistor |
| 002182 |
| Superlatticed negative differential-resistance heterojunction bipolar transistor |
| 002183 |
| Mg-related deep levels in AlInP |
| 002184 |
| Light-induced negative differential resistance in planar InP/InGaAs/InP double-heterojunction p-i-n photodiode |
| 002185 |
| Room-temperature photoreflectance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles |
| 002186 |
| 1/f noise measurements on indium antimonide metal-oxide-semiconductor field-effect transistors |
| 002187 |
| High conduction-band offset of AlInAsSb/InGaAs multiple quantum wells grown by metalorganic vapor phase epitaxy |
| 002190 |
| Optical characterization of visible multiquantum-well semiconductor lasers by collection/excitation modes of scanning near-field optical microscopy |
| 002191 |
| Effect of threading dislocations on electron transport in In0.24Ga0.76N/GaN multiple quantum wells |
| 002192 |
| Application of selective removal of mesa sidewalls for high-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic transistors |
| 002193 |
| Application of a new airbridge-gate structure for high-performance Ga0.51In0.49P/In0.15Ga0.85As/GaAs pseudomorphic field-effect transistors |
| 002194 |
| The optical and electrical studies of hydrogen passivation in GaInP/GaAs heterostructures |
| 002195 |
| Transition of carrier distribution from a strained to relaxed state in InGaAs/GaAs quantum well |
| 002196 |
| Growth and characterization of high-quality InAs0.86Sb0.05P0.09 alloy by liquid-phase epitaxy |
| 002197 |
| Ga0.51In0.49P/InxGa1-xAs/GaAs lattice-matched and strained doped-channel field-effect transistors grown by gas source molecular beam epitaxy |
| 002198 |
| Piezoelectric effects in the optical properties of strained InGaN quantum wells |
| 002200 |
| Determination of the valence-band offset for GaInAsSb/InP heterostructure |
| 002201 |
| Influence of sapphire nitridation on properties of indium nitride prepared by metalorganic vapor phase epitaxy |
| 002203 |
| Persistent photoconductivity in semimetallic AlxGa1-xSb/InAs quantum wells |
| 002204 |
| Majority- and minority-carrier traps in Te-doped AlInP |
| 002205 |
| Structure and photoluminescence of InGaAs self-assembled quantum dots grown on InP(001) |
| 002206 |
| Room-temperature operation of In0.5Ga0.5As as quantum dot lasers grown on misoriented GaAs substrates by molecular beam epitaxy |
| 002207 |
| Reduction of spontaneous surface segregation in (InP)2/(GaP)2 quantum wells grown on tilted substrates |
| 002208 |
| Photoluminescence study of high-quality InGaAs/GaAs quantum dots on (111)B GaAs substrates |
| 002209 |
| Photoluminescence characteristics of self-assembled In0.5Ga0.5As quantum dots on vicinal GaAs substrates |
| 002210 |
| Excitation density and temperature dependent photoluminescence of InGaAs self-assembled quantum dots |
| 002293 |
| The reduction and enhancement of spontaneous ordering in (InP)2/(GaP)2 quantum wells grown by solid source molecular beam epitaxy |
| 002294 |
| Facet-coating effects on the 1.3-μm strained multiple-quantum-well AlGaInAs/InP laser diodes |
| 002295 |
| Raman scattering of InAs1-x-ySbxPy quaternary alloys |
| 002296 |
| Positron-lifetime study of compensation defects in undoped semi-insulating InP |
| 002297 |
| Raman and x-ray studies of InN films grown by metalorganic vapor phase epitaxy |
| 002298 |
| Photoconductivity in self-organized InAs quantum dots |
| 002299 |
| BCl3/Ar reactive ion etching for gate recessing of GaInP/InGaAs/GaAs pseudomorphic high electron mobility transistors |
| 002301 |
| Thermal properties of InAs0.86Sb0.05P0.09 homostructure diodes |
| 002302 |
| Optical and electrical properties of Sn-doped indium oxide films deposited on polyester by reactive evaporation |
| 002303 |
| Saturation spectroscopy and electronic-state lifetimes in a magnetic field in InAs/AlxGa1-xSb single quantum wells |
| 002304 |
| P-terminated InP(100) surface studied using a first-principles energy-minimization approach |
| 002305 |
| Application of δ-doped wide-gap collector structure for high-breakdown and low-offset voltage transistors |
| 002306 |
| InGaAs/GaAs quantum dots on (111)B GaAs substrates |
| 002307 |
| Raman and X-ray studies of InN films grown at different temperatures by metalorganic vapor phase epitaxy |
| 002309 |
| Photoreflectance spectroscopy of strained-layer (111)B InGaAs/GaAs quantum well diodes |
| 002310 |
| Erratum: Strain dependence of hole mass and optical anisotropy in (110) quantum wells [J. Appl. Phys. 82, 5711 (1997)] |
| 002311 |
| Reactive ion etching for AlGalnP/GaInP laser structures |
| 002312 |
| Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN |
| 002313 |
| Photoluminescence investigation of GaInP/GaAs multiple quantum wells grown on (001) and (311) B GaAs surfaces by gas source molecular beam epitaxy |
| 002314 |
| BCl3/Ar plasma-induced surface damage in GaInP/InGaAs/GaInP quantum-well high-electron-mobility transistors |
| 002315 |
| High resolution x-ray diffraction study of Bragg peak width in strained InGaAs/InAlAs/InP heterostructures |
| 002316 |
| An elucidation of solid incorporation of InGaN grown by metalorganic vapor phase epitaxy |
| 002317 |
| 650 nm AlGaInP/GaInP compressively strained multi-quantum well light emitting diodes |
| 002318 |
| 0.66 μm InGaP/InGaAlP single quantum well microdisk lasers |
| 002319 |
| Theoretical analysis of the Auger mechanism in a GaInAsSb infrared photovoltaic detector |
| 002320 |
| Stability improvement of selective oxidation during the fabrication of InGaAs/GaAs vertical cavity surface emitting laser |
| 002321 |
| High-temperature and low-threshold-current operation of 1.5 μm AlGaInAs/InP strain-compensated multiple quantum well laser diodes |
| 002322 |
| High-magnetic-field effects on the terahertz mobility of hot electrons in n-type InSb |
| 002323 |
| Electrical characteristics of heterostructure-emitter bipolar transistors using spacer layers |
| 002324 |
| Suppression of electron and hole leakage in 1.3 μm AlGaInAs/InP quantum well lasers using multiquantum barrier |
| 002325 |
| Ordered InAs quantum dots in InAlAs matrix on (001) InP substrates grown by molecular beam epitaxy |
| 002326 |
| Formation of PIn defect in annealed liquid-encapsulated Czochralski InP |
| 002329 |
| Differential reflection dynamics in InAsxP1-x/InP (x≤0.35) strained-multiple-quantum wells |
| 002330 |
| The directionality of quantum confinement on strain-induced quantum-wire lasers |
| 002331 |
| Analysis of Fermi level pinning and surface state distribution in InAlAs heterostructures |
| 002332 |
| Optical modes within III-nitride multiple quantum well microdisk cavities |
| 002333 |
| Magnetospectroscopy of high-purity InP grown by gas source molecular beam epitaxy |
| 002334 |
| Self-organized InAs/GaAs quantum dots grown by gas source molecular beam epitaxy |
| 002335 |
| Characterization of piezoelectric (111)B InGaAs/GaAs p-i-n quantum well structures using photoreflectance spectroscopy |
| 002336 |
| Studies of two-subband occupied electron gas in modulation-doped In0.52Al0.48As/In0.53Ga0.47As single quantum well by far-infrared modulated photoluminescence |
| 002337 |
| Ordering reduction in In0.5Ga0.5P grown by solid source molecular beam epitaxy |
| 002338 |
| Conduction-band offset in a pseudomorphic GaAs/In0.2Ga0.8As quantum well determined by capacitance-voltage profiling and deep-level transient spectroscopy techniques |
| 002339 |
| Alterable temperature-dependent wavelength shifts in (InP)2/(GaP)2 quantum wells |
| 002341 |
| Alignment of misfit dislocations in the In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As/InP heterostructure |
| 002342 |
| Effect of interface roughness and well width on differential reflection dynamics in InGaAs/InP quantum wells |
| 002343 |
| Thermal annealing of Pd/InAlAs Schottky contacts for transistor buried-gate technologies |
| 002344 |
| Reactive ion etching of CHF3+BCl3 for ternary InxAl1-xAs and InxGa1-xAs (x=0.18, 0.3, 0.52) compounds using various In contents |
| 002415 |
| Effect of oxygen concentration and annealing treatment on the optical properties of the transparent conductive CdIn2O4 thin films |
| 002436 |
| The third subband population in modulation-doped InGaAs/InAlAs heterostructures |
| 002437 |
| Strain dependence of hole mass and optical anisotropy in (110) quantum wells |
| 002438 |
| kp finite-difference method: Band structures and cyclotron resonances of AlxGa1-xSb/InAs quantum wells |
| 002439 |
| Temperature dependence of photoluminescence spectra in InAs/GaAs quantum dot superlattices with large thicknesses |
| 002440 |
| Synthesis, structure, and optical properties of nanometer-sized In2O3 capped by anionic surfactant |
| 002442 |
| A novel waveguide structure to reduce beam divergence and threshold current in GaInP/AlGaInP visible quantum-well lasers |
| 002443 |
| Enhanced real-space transfer in δ-doped GaAs/In0.1Ga0.9As/In0.25Ga0.75As two-step channel heterojunctions |
| 002444 |
| Characterization of photoluminescence intensity and efficiency of free excitons in semiconductor quantum well structures |
| 002445 |
| Built-in electric field and surface Fermi level in InP surface-intrinsic n+ structures by modulation spectroscopy |
| 002448 |
| Negative differential resistance in InGaAs/AlAsSb/InGaAs single-barrier heterostructure |
| 002449 |
| Bistable GaAs-InGaP triangular-barrier optoelectronic switch |
| 002450 |
| Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperature |
| 002451 |
| Normal incident long-wavelength quantum well infrared photodetectors using electron intersubband transitions |
| 002452 |
| Long wavelength (1.3 μm) vertical-cavity surface-emitting lasers with a wafer-bonded mirror and an oxygen-implanted confinement region |
| 002453 |
| Defects in metamorphic InxAl1-xAs (x<0.4) epilayers grown on GaAs substrates |
| 002454 |
| Intraband optical absorption in semiconductor coupled quantum dots |
| 002455 |
| Optical and structural characterization of InAs/GaSb superlattices |
| 002456 |
| The calculation and the photoluminescence characterization of energy levels in a strained GaAs/In0.2Ga0.8As/GaAs quantum well heterostructure for the application of light-emitting real-space transfer devices |
| 002457 |
| Effect of well thickness on the two-dimensional electron-hole system in AlxGa1-xSb/InAs quantum wells |
| 002458 |
| Characteristics of InxGa1-xAs/GaAs pseudomorphic modulation doped field effect transistor |
| 002459 |
| Ultraviolet (340-390 nm), room temperature, photoluminescence from InAs nanocrystals embedded in SiO2 matrix |
| 002460 |
| The enhancement of InGaAs Schottky barrier height by the addition of Pr2O3 and In2O3 in the liquid phase epitaxy |
| 002461 |
| Self-formed InGaAs/GaAs quantum dot superlattice and direct observation on strain distribution in the capped superlattice |
| 002462 |
| Gas source molecular beam epitaxy growth of high quality InGaAsP for 0.98 μm Al-free InGaAs/InGaAsP/InGaP laser diodes |
| 002463 |
| Optical characterization of real-space hot-electron transfer in a strained GaAs/In0.2Ga0.8As/GaAs quantum well heterostructure |
| 002464 |
| Comment on High-efficiency energy up-conversion at GaAs-GaInP2 interfaces [Appl. Phys. Lett. 67, 2813 (1995)] |
| 002465 |
| New aspects of K promoted nitridation of the InP(100) surface |
| 002466 |
| InAs room temperature infrared photoconductive detectors grown by molecular-beam epitaxy |
| 002467 |
| Controllable drain cut-in voltage with strong negative differential resistance in GaAs/InGaAs real-space transfer heterostructure |
| 002468 |
| Multiple subband population in delta-doped AlAsSb/InGaAs heterostructures |
| 002469 |
| Magneto-transport properties of semiconductors from flatband magnetocapacitance spectroscopy |
| 002470 |
| Photoluminescence of undoped bulk InP grown by the liquid-encapsulated vertical Bridgman technique |
| 002471 |
| Origins of 1/f noise in indium antimonide photodiodes |
| 002472 |
| Temperature dependence of quantized states in an In0.86Ga0.14As0.3P0.7/InP quantum well heterostructure |
| 002498 |
| Optical limiting properties of In2O3 nanoparticles under cw laser illumination |
| 002573 |
| Transient photovoltaic properties in Al/tin-phthalocyanine/indium-tin-oxide sandwich cell |
| 002842 |
| A new one-dimensional compound : synthesis and structure of InNb3(Se2)6 |
