| Ident. | Authors (with country if any) | Title |
|---|
| 000020 |
| Interface layer control and optimization of InAs/GaSb type-II superlattices grown by molecular beam epitaxy |
| 000069 |
| Tilt generation and phase separation in metamorphic GaInP buffers grown on GaAs substrates by metal-organic chemical vapor deposition |
| 000075 |
| The investigation of GaInP solar cell grown by all-solid MBE |
| 000078 |
| The effects of injector doping densities on lasing properties of InP-based quantum cascade lasers at 4.3 μm |
| 000096 |
| Surface roughness induced electron mobility degradation in InAs nanowires |
| 000101 |
| Study of Ultraviolet Emission Enhancement in AlxInyGa1-x-yN Quaternary Alloy Film |
| 000113 |
| Single InAs Quantum Dot Grown at the Junction of Branched Gold-Free GaAs Nanowire |
| 000124 |
| Quantized Conductance and Its Correlation to the Supercurrent in a Nanowire Connected to Superconductors |
| 000147 |
| Physical Mechanism of Surface Roughening of the Radial Ge-Core/Si-Shell Nanowire Heterostructure and Thermodynamic Prediction of Surface Stability of the InAs-Core/GaAs-Shell Nanowire Structure |
| 000149 |
| Photoluminescence properties of porous InP filled with ferroelectric polymers |
| 000156 |
| Phase Separation Induced by Au Catalysts in Ternary InGaAs Nanowires |
| 000161 |
| Optical and structural studies of dual wavelength InGaN/GaN tunnel-injection light emitting diodes grown by metalorganic chemical vapor deposition |
| 000162 |
| Optical Far-Field Method with Subwavelength Accuracy for the Determination of Nanostructure Dimensions in Large-Area Samples |
| 000165 |
| Obvious improvement of light extraction obtained by anodic aluminum oxide coverage on GaN surface |
| 000209 |
| Influence of GaAs(0 01 ) pregrowth surface morphology and reconstruction on the growth of InGaAs layers |
| 000213 |
| InP/InGaAs/InP DHBT structures with high carbon-doped base grown by gas source molecular beam epitaxy |
| 000214 |
| InP nanowires synthesized via solvothermal process with CTAB assisted |
| 000217 |
| InAs/GaSb type-II superlattice mid-wavelength infrared focal plane array detectors grown by molecular beam epitaxy |
| 000222 |
| Improved photovoltaic performance of InGaN/GaN solar cells with optimized transparent current spreading layers |
| 000227 |
| Impact of double-cap procedure on the characteristics of InAs/InGaAsP/ InP quantum dots grown by metal-organic chemical vapor deposition |
| 000242 |
| Growth of metamorphic InGaP layers on GaAs substrates |
| 000243 |
| Growth of InAs quantum dots on Si-based GaAs nanowires by controlling the surface adatom diffusion |
| 000244 |
| Growth and large-scale assembly of InAs/InP core/shell nanowire: effect of shell thickness on electrical characteristics |
| 000273 |
| Efficiency droop improvement for InGaN-based light-emitting diodes with gradually increased In-composition across the active region |
| 000274 |
| Effects of growth temperature and buffer scheme on characteristics of InP-based metamorphic InGaAs photodetectors |
| 000291 |
| Dynamic Process of Phase Transition from Wurtzite to Zinc Blende Structure in InAs Nanowires |
| 000304 |
| Continuous-Flow MOVPE of Ga-Polar GaN Column Arrays and Core-Shell LED Structures |
| 000363 |
| Three-Dimensional Pillared-Layer 3d-4f Heterometallic Coordination Polymers With or Without Halides |
| 000367 |
| The saturation density property of (B)InAs/GaAs quantum dots grown by metal-organic chemical vapor deposition |
| 000395 |
| Syntheses, structure and properties of three-dimensional pillared-layer Ag(I)-Ln(III) heterometallic coordination polymers based on mixed isonicotinate and hemimellitate ligands |
| 000396 |
| Supercurrent and Multiple Andreev Reflections in an InSb Nanowire Josephson Junction |
| 000423 |
| Self-Assembled InGaAs Quantum Dot Clusters with Controlled Spatial and Spectral Properties |
| 000429 |
| Quantum Size Effects on the Chemical Sensing Performance of Two-Dimensional Semiconductors |
| 000442 |
| Piezo-Phototronic Effect on Electroluminescence Properties of p-Type GaN Thin Films |
| 000457 |
| One-Dimensional Quantum Confinement Effect Modulated Thermoelectric Properties in InAs Nanowires |
| 000463 |
| Morphology and shape dependent characteristics of InAs/InP(100) quantum dot laser grown by gas source molecular beam epitaxy |
| 000491 |
| Influence of strain on built-in dipole moment in asymmetric InxGa1-xAs quantum dot molecules |
| 000513 |
| High Critical-Current Superconductor-InAs Nanowire-Superconductor Junctions |
| 000515 |
| Heteroepitaxial Growth of GaSb Nanotrees with an Ultra-Low Reflectivity in a Broad Spectral Range |
| 000518 |
| Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth |
| 000525 |
| Formation Mechanism and Optical Properties of InAs Quantum Dots on the Surface of GaAs Nanowires |
| 000540 |
| Experimental Studies on Blinking Behavior of Single InP/ZnS Quantum Dots: Effects of Synthetic Conditions and UV Irradiation |
| 000572 |
| Effects of Excess Sb on Thermoelectric Properties of Barium and Indium Double-Filled Iron-Based p-Type Skutterudite Materials |
| 000573 |
| Effects of AlN interlayer on the transport properties of nearly lattice-matched InAIN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition |
| 000576 |
| Effect of growth temperature on surface morphology and structure of InAs/GaSb superlattices grown by metalorganic chemical vapor deposition |
| 000580 |
| Effect of Molecular Passivation on the Doping of InAs Nanowires |
| 000600 |
| Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD) |
| 000603 |
| Colorful InAs Nanowire Arrays: From Strong to Weak Absorption with Geometrical Tuning |
| 000609 |
| Calculation of critical size of coherent InAs quantum dot on GaAs substrate |
| 000620 |
| Anomalous Zero-Bias Conductance Peak in a Nb-InSb Nanowire-Nb Hybrid Device |
| 000623 |
| Analysis of Interface Scattering in AlGaN/GaN/InGaN/GaN Double-Heterojunction High-Electron-Mobility Transistors |
| 000641 |
| A Novel Clinically Translatable Fluorescent Nanoparticle for Targeted Molecular Imaging of Tumors in Living Subjects |
| 000657 |
| Tuning of electron g factors by electric fields in asymmetric InAs quantum dot molecules |
| 000659 |
| Top Transmission Grating GaN LED Simulations for Light Extraction Improvement |
| 000664 |
| Theoretical study on critical thicknesses of InGaN grown on (0 0 0 1) GaN |
| 000683 |
| Tetragonal distortion of InAsPSb film grown on InAs substrate studied by Rutherford backscattering/channeling and synchrotron X-ray diffraction |
| 000703 |
| Study of molecular-beam epitaxy growth on patterned GaAs ( 1 0 0) substrates by masked indium ion implantation |
| 000718 |
| Shallow-Deep InGaN Multiple-Quantum-Well System for Dual-Wavelength Emission Grown on Semipolar (1122) Facet GaN |
| 000720 |
| Self-assembled InAs/GaAs quantum dot molecules with InxGa1- xAs strain-reducing layer |
| 000730 |
| Quantum dot lasers grown by gas source molecular-beam epitaxy |
| 000745 |
| Polarized GaN-based light-emitting diode with an embedded metallic/dielectric subwavelength grating |
| 000761 |
| Optimization of Microlenses for InSb Infrared Focal-Plane Arrays |
| 000763 |
| Optically induced current oscillation in a modulation-doped field-effect transistor embedded with InAs quantum dots |
| 000768 |
| Optical bistability in GaInAsP/InP coupled-circular resonator microlasers |
| 000785 |
| MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers |
| 000806 |
| Influence of the TEGa flow on the optical and structural properties of InGaN/GaN multiple quantum wells grown by MOCVD |
| 000810 |
| Influence of Alkali Metal Cation (Li(I), Na(I), K(I)) on the Construction of Chiral and Achiral Heterometallic Coordination Polymers |
| 000811 |
| InP/InGaAs/InP DHBT structures with graded composition base grown by gas source molecular beam epitaxy |
| 000812 |
| InP-based deep-ridge NPN transistor laser |
| 000813 |
| InP Lateral Overgrowth Technology for Silicon Photonics |
| 000815 |
| InGaAs/GaAs saturable absorber for diode-pumped passively Q-switched mode-locking of Tm,Ho:YVO4 laser |
| 000823 |
| Improvement of structural and luminescence properties in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers |
| 000830 |
| High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD |
| 000833 |
| High-Temperature Thermoelectric Properties of Co4Sb12-Based Skutterudites with Multiple Filler Atoms: Ce0.1InxYbyCo4Sb12 |
| 000837 |
| High quality InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition |
| 000842 |
| Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition |
| 000850 |
| GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy |
| 000852 |
| First-principles study of InAs, InxGa1-xSb nanotubes and InAs/InxGa1-xSb nanotube superlattices |
| 000906 |
| Effect of built-in electric field in photovoltaic InAs quantum dot embedded GaAs solar cell |
| 000908 |
| Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy |
| 000935 |
| Comparison between two types of photonic-crystal cavities for single-photon emitters |
| 000948 |
| An investigation on IXxGa1-xN/GaN multiple quantum well solar cells |
| 000959 |
| A unified calculation of the optical spectral band positions and electron paramagnetic resonance spectral data for Yb3+ in InP semiconductor |
| 000972 |
| 100 Gb/s RZ-OOK transmission through 212 km deployed SSMF using monolithically integrated ETDM receiver module |
| 000991 |
| The refractive nonlinearities of InAs/GaAs quantum dots above-bandgap energy |
| 000A00 |
| The effect of an electric field on the nonlinear response of InAs/GaAs quantum dots |
| 000A03 |
| The Application of ALD Process on Special Fiber |
| 000A05 |
| Temperature dependent photoluminescence of an In(Ga)As/GaAs quantum dot system with different areal density |
| 000A08 |
| Temperature dependence of hole spin relaxation in ultrathin InAs monolayers |
| 000A40 |
| Spectral response variation of exponential-doping transmission-mode GaAs photocathodes in the preparation process |
| 000A48 |
| Selective etching of InP in NaF solution |
| 000A50 |
| Scanning capacitance microscopy characterization on diffused p-n junctions of InGaAs/InP infrared detectors |
| 000A51 |
| SELF-ASSEMBLING OF INAS QUANTUM DOTS ON GAAS(001) IN MOLECULAR BEAM EPITAXY |
| 000A56 |
| Rapid growth and characterization of InN nanocolumns on InGaN buffer layers at a low ratio of N/In |
| 000A69 |
| Photoluminescence investigation of InAs quantum dots in quantum well with different strain reducing layer |
| 000A74 |
| Performance study of InAs/GaAs quantum dot covered by graded InxGa1-xAs layer |
| 000A80 |
| Optical bistability in InP/InAlGaAs multi-quantum-well semiconductor ring lasers |
| 000A84 |
| Observation of spin-dependent quantum jumps via quantum dot resonance fluorescence |
| 000A94 |
| Magneto-optical absorption by InAs/GaSb-based type II and broken-gap quantum well |
| 000B00 |
| Long rectangle resonator 1550 nm AlGaInAs/InP lasers |
| 000B03 |
| Ligand-Directed Assembly of Asymmetric 1,3,5-Triazine Ligands Containing Pyridyl and Hydroxyl Groups |
| 000B12 |
| Investigation on multiple-port microcylinder lasers based on coupled modes |
| 000B16 |
| Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density |
| 000B26 |
| InAs/GaAs quantum dot lasers grown by gas-source molecular-beam epitaxy |
| 000B32 |
| Hydrogenic impurity states in zinc-blende symmetric InGaN/GaN multiple quantum dots |
| 000B60 |
| Evaluation of the In concentration of an InxGa1-xSb alloy layer in cross-sectional HRTEM images of III-V semiconductor superlattices |
| 000C01 |
| Effect of epilayer's growth temperature on crystalline quality of In As0.6P0.4/InP grown by two-step growth method |
| 000C08 |
| Different growth mechanisms of bimodal InAs/GaAs QDs |
| 000C23 |
| Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer |
| 000C28 |
| Analysis on the high luminous flux white light from GaN-based laser diode |
| 000C32 |
| An InP based wide gain spectrum asymmetric quantum wells for large scale optoelectronic monolithic integration |
| 000C34 |
| Abnormal temperature dependent photoluminescence of self-assembled InAs/GaAs surface quantum dots with high areal density |
| 000C68 |
| Two highly connected POM-based hybrids varying from 2D to 3D: The use of the isomeric ligands |
| 000C79 |
| Theoretical study of InGaAsP-InP active microring |
| 000D42 |
| Simulation of a 1550 nm InGaAsP-InP transistor laser |
| 000D44 |
| Room temperature continuous-wave electrically-injected InGaAsP triangle and square microlasers |
| 000D55 |
| Prospective important semiconducting nanotubes: synthesis, properties and applications |
| 000D69 |
| Polarization of emission from self-assembled quantum dots and its application to the optical characterization of structure |
| 000D81 |
| Performance of gas source MBE-grown wavelength-extended InGaAs photodetectors with different buffer structures |
| 000D84 |
| Optimization of AlInGaAs/InGaAs/InAs strain compensated triangular quantum wells grown by gas source molecular beam epitaxy for laser applications in 2.1-2.4 μm range |
| 000D86 |
| Optical properties of amorphous III-V compound semiconductors from first principles study |
| 000D88 |
| Optical bistability in InP/GaInAsP equilateral- triangle-resonator microlasers |
| 000D94 |
| Nonlinearities of PIN Photodiodes and PSPICE simulation |
| 000D95 |
| Noncontact evaluation of nondoped InP wafers by terahertz time-domain spectroscopy : TERAHERTZ WAVE PHOTONICS |
| 000E08 |
| Metamorphic InGaAs telecom lasers on GaAs |
| 000E32 |
| InP nanowires with various morphologies formed by Au-assisted metal-organic chemical vapor deposition |
| 000E36 |
| Improved light extraction of GaN-based light-emitting diodes with surface-patterned ITO |
| 000E38 |
| Hydrothermal Syntheses and Structural Diversity of Cobalt Complexes with 2,2'-Bibenzimidazole Ligand by Temperature Tuning Strategy |
| 000E48 |
| Growth of InAs/GaSb type-II superlattices by gas-source molecular-beam epitaxy |
| 000E64 |
| Finite Element Analysis of the InP Nano Inner Cladding Fiber |
| 000E65 |
| Fiber-coupled near-infrared single-photon spectrum analyzer based on a InGaAs/InP avalanche photodiode single-photon detector |
| 000E87 |
| Electronic structure of quantum dots in (111) direction |
| 000F24 |
| Design and epitaxy of structural III-nitrides |
| 000F26 |
| Design and Fabrication of Multichannel Tunable Photodetector Array |
| 000F30 |
| Dark current simulation of InP/In0.53Ga0.47As/InP p-i-n photodiode |
| 000F44 |
| Calculation of phase diagrams in AlxIn1-xAs/InP, AsxSb1-xAl/InP and AIxIn1-xSb/InSb nano-film systems |
| 000F45 |
| Calculation of Exciton Energy in InAs/InP Self-assembled Semiconductor Quantum Wires |
| 000F48 |
| Band Engineering in Strained GaN/ultrathin InN/GaN Quantum Wells |
| 000F53 |
| Annealing behaviors of long-wavelength InAs/GaAs quantum dots with different growth procedures by metalorganic chemical vapor deposition |
| 000F58 |
| Alloy phase separation in InAs/InAlAs/InP nanostructure superlattices studied by finite element calculation |
| 000F59 |
| Advanced InP Technology for High Performance 40 Gb/s (RZ-) DQPSK Transponder |
| 000F65 |
| A ridge width varied two-section index-coupled DFB self-pulsation laser with a wide continuously tunable frequency range |
| 000F76 |
| 3D pillar-layered coordination polymers based on 4d-4f heterometallic assembly |
| 000F88 |
| Ultracompact directional couplers realized in InP by utilizing feature size dépendent etching |
| 000F99 |
| The impact of imperfect symmetry on band edge modes of a two-dimensional photonic crystal with square lattice |
| 001006 |
| The characterization and properties of InN grown by MOCVD |
| 001013 |
| Synthesis of high quality p-type Zn3P2 nanowires and their application in MISFETs |
| 001022 |
| Superluminescent Diode Monolithically Integrated with Novel Y-Branch by Bundle Integrated Waveguide for Fiber Optic Gyroscope |
| 001035 |
| Strain Engineered Quantum Dots for Long Wavelength Emission |
| 001038 |
| Single Dipole Mode Photonic Crystal Laser on InGaAsP/InP QW Waveguide Slab |
| 001040 |
| Simulation of multimode interference couplers with deep rib structure and tunable power splitting ratio |
| 001043 |
| Self-pulsation in a two-section DFB laser with a varied ridge width |
| 001047 |
| SBS slow light using a novel optical fibre doped with nano-particles |
| 001052 |
| Properties of Au/Pt/Ti contact to p-InP by rapid thermal processing |
| 001076 |
| Optimizing the GaAs capping layer growth of 1.3 μm InAs/GaAs quantum dots by a combined two-temperature and annealing process at low temperatures |
| 001081 |
| Numerical simulation of liquid-encapsulant float zone growth of indium phosphide crystals in zero gravity |
| 001087 |
| Narrow line-width resonant cavity enhanced photodetectors operating at 1.55 μm |
| 001093 |
| Mode behavior in triangle and square microcavities |
| 001097 |
| Micro-cylinder mode in photonic quasicrystal observed by near-field optical microscopy |
| 001101 |
| Low-temperature CVD synthesis route to GaN nanowires on silicon substrate |
| 001133 |
| High Uniformity InGaAs Linear Mesa-type SWIR Focal Plane Arrays |
| 001168 |
| Electrochemical reduction synthesis of In-Sb nanoropes and terraced micropyramids |
| 001190 |
| Dispersion of the nano-lnP Doped Fiber |
| 001191 |
| Directional emission InP/GaInAsP square-resonator microlasers |
| 001198 |
| Design and Fabrication of 2×2 InP/InGaAsP Optical Switch |
| 001214 |
| Characterization of a-plane InN film grown on r-plane sapphire by MOCVD |
| 001225 |
| Analysis on the frequency band of ultra-wide-band electromagnetic radiation from photoconductive semiconductor switches |
| 001226 |
| Analysis and Simulation of Process Parameters for Epitaxy of InP-based Compound Semiconductor Materials |
| 001246 |
| 256×1 Element Linear InGaAs Short Wavelength near-Infrared Detector Arrays |
| 001250 |
| Weak antilocalization and beating pattern in an InGaAs/InAlAs quantum well |
| 001252 |
| Unselective regrowth buried heterostructure long-wavelength superluminescent diode realized with MOVPE |
| 001262 |
| The origins of double emission peaks in electroluminescence spectrum from InGaN/GaN MQW LED |
| 001264 |
| The influence of internal electric fields on the transition energy of InGaN/GaN quantum well |
| 001265 |
| The high mobility InN film grown by MOCVD with GaN buffer layer |
| 001266 |
| The growth of high-Al-content InAlGaN quaternary alloys by RF-MBE |
| 001267 |
| The growth and field electron emission of InGaN nanowires |
| 001300 |
| Structural characterization of InN films grown on different buffer layers by metalorganic chemical vapor deposition |
| 001301 |
| Structural and optical properties of wurtzite InN grown on Si(111) |
| 001315 |
| Rapid photoluminescence quenching in GaInNAs quantum wells at low temperature |
| 001318 |
| Pseudospin in Si δ-doped InAlAs/InGaAs/InAlAs single quantum well |
| 001329 |
| Photoluminescence study of AlGaInP/GaInP quantum well intermixing induced by zinc impurity diffusion |
| 001330 |
| Photoluminescence of InP nanocrystals embedded in silica gel-glasses as a function of temperature, and excitation power |
| 001350 |
| Multiplication Characteristics of InP/InGaAs Avalanche Photodiodes with Thick Multiplication and Charge Layers |
| 001358 |
| Metamorphic growth of 1.25-1.29 μm InGaAs quantum well lasers on GaAs by molecular beam epitaxy |
| 001359 |
| Metamorphic InGaAs quantum wells for light emission at 1.3-1.6 μm |
| 001363 |
| Long-wavelength VCSELs for optical networks and trace-gas monitoring |
| 001368 |
| Key issues associated with low threshold current density for InP-based quantum cascade lasers |
| 001370 |
| Initial stages of the cubic-InN growth with the technique of the pre-deposition of indium |
| 001382 |
| Hole Rashba effect and g-factor in InP1 nanowires |
| 001385 |
| High-power InGaAs VCSEL's single devices and 2-D arrays |
| 001388 |
| Heavily carbon-doped p-type InGaAs grown by gas source molecular beam epitaxy for application to heterojunction bipolar transistors |
| 001394 |
| Green electroluminescence from ZnO/n-InP heterostructure fabricated by metalorganic chemical vapour deposition |
| 001395 |
| Gated-mode integrated Single photon detector for telecom wavelengths |
| 001397 |
| Fabrication of ultra-low density and long-wavelength emission InAs quantum dots |
| 001401 |
| Fabrication and optical property of single-crystalline InSb nanowire arrays |
| 001402 |
| Fabrication and characteristics of silica optical fiber doped with InP nano-semiconductor material |
| 001404 |
| Experimental and numerical study on AlGaInAs/AlGaAs distributed feedback lasers with GaInP gratings |
| 001405 |
| Equilateral-triangle-resonator injection lasers with directional emission |
| 001420 |
| Electronic band structures and transport properties of wurtzite indium nitride grown by metalorganic vapor phase epitaxy |
| 001440 |
| Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD |
| 001442 |
| Effect of size non-uniformity on photoluminescence from ensembles of InAs quantum dots embedded in GaAs |
| 001444 |
| Effect of inter-level relaxation and cavity length on double-state lasing performance of quantum dot lasers |
| 001457 |
| Design and Fabrication of a Novel Monothically Integrated Dual-Wavelength Tunable Photodetector |
| 001458 |
| Design and Fabrication of High-Performance InGaAsP/InP Electroabsorption Modulator |
| 001464 |
| Controlled growth of nanostructured III-nitride films via a reactive magnetron sputtering method |
| 001476 |
| Cathodoluminescence study of InGaN/GaN quantum-well LED structures grown on a Si substrate |
| 001479 |
| Buffer influence on AlSb/InAs/AlSb quantum wells |
| 001494 |
| A Novel Optical Fibre Doped with the Nano-material as InP |
| 001500 |
| Wavelength-selective photodetectors operating at long wavelength |
| 001501 |
| Two-dimensional electron gas densities in AlGaN/AlN/GaN heterostructures |
| 001507 |
| Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots |
| 001510 |
| Thermal kinetic analysis of InN by TG-MS combined with PulseTA |
| 001512 |
| Theoretical study of phase separation in wurtzite InGaN |
| 001514 |
| The uniformity of InGaAs in InP/InGaAs/InP by microwave photoconductivity decay (μ-PCD) carrier lifetime measurement |
| 001518 |
| The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 μm wavelength GaInNAs/GaAs quantum well with high indium content |
| 001522 |
| Temperature dependence of surface quantum dots grown under frequent growth interruption |
| 001523 |
| Temperature dependence of interband transition energy in InGaAsN strain-compensated quantum-well and ridge-waveguide lasers fabricated with pulsed anodic oxidation |
| 001537 |
| Surface and optical properties of AlGaInP films grown on GaAs by metalorganic chemical vapor deposition |
| 001547 |
| Structural and optical properties of violet InGaN/AlInGaN light-emitting diodes grown by MOCVD |
| 001549 |
| Spin-splitting enhanced by many-body effects in a two-dimensional electron gas in the presence of the Rashba spin-orbit interaction |
| 001553 |
| Simulation of InGaN/GaN multiple quantum well light-emitting diodes with quantum dot model for electrical and optical effects |
| 001555 |
| Separated AlxIn1-xN quantum dots grown by plasma-reactive co-sputtering |
| 001557 |
| Role of deep traps in carrier generation and transport in differently doped InP wafers |
| 001559 |
| Recent advances in photonic integrated circuits |
| 001569 |
| Piezomodulated reflectance study of self-assembled InAs quantum dots-in-a-well |
| 001571 |
| Photoluminescence characteristics of low indium composition InGaN thin films grown on sapphire by metalorganic chemical vapor deposition |
| 001579 |
| Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness |
| 001580 |
| Optical properties of InN films grown by molecular beam epitaxy at different conditions |
| 001581 |
| Optical properties of InGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy |
| 001582 |
| Optical and local current studies on InAs/GaAs quantum dots |
| 001588 |
| Narrow stripe selective growth of oxide-free InGaAlAs/InGaAlAs MQWs by ultra-low pressure MOVPE |
| 001589 |
| Narrow stripe selective growth of InGaAlAs waveguides used for buried heterostructure lasers |
| 001590 |
| Multiplication characteristics of InP/InGaAs avalanche photodiodes with a thicker charge layer |
| 001591 |
| Monolithic integration of electroabsorption modulator and DFB laser for 10-Gb/s transmission |
| 001595 |
| Low temperature step-graded InAlAs/GaAs metamorphic buffer layers grown by molecular beam epitaxy |
| 001596 |
| Long wavelength integrated optical demultiplexing and receiving device based on one-mirror-inclined three-mirror cavity structure |
| 001609 |
| InGaP/GaAs heterojunction bipolar transistor grown by solid-source molecular beam epitaxy with a GaP decomposition source |
| 001610 |
| Improved quality of InGaN/GaN multiple quantum wells by a strain relief layer |
| 001614 |
| High-quality multiple quantum wells selectively grown with tapered masks by ultra-low-pressure MOCVD |
| 001615 |
| High-performance EML grown on taper-masked pattern substrates by ultra-low-pressure MOCVD |
| 001618 |
| High performance of gated-mode single-photon detector at 1.55 μm |
| 001621 |
| Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties |
| 001636 |
| Evolution of mosaic structure in InN grown by metalorganic chemical vapor deposition |
| 001644 |
| Electron irradiation-induced defects in InP pre-annealed at high temperature |
| 001648 |
| Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy |
| 001662 |
| Direct wafer bonding technology employing vacuum-cavity pre-bonding |
| 001664 |
| Dipole mode photonic crystal point defect laser on InGaAsP/InP |
| 001674 |
| Crack control in GaN grown on silicon (111) using in doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition |
| 001684 |
| Band gap blue shift of InGaAs/InP multiple quantum wells by different dielectric film coating and annealing |
| 001689 |
| Analysis and optimization of an InGaAsP/InP waveguide variable optical attenuator |
| 001695 |
| 10Gbps zero-chirp compact transmitter with InP MQW mach-zehnder modulator |
| 001711 |
| The effect of a combined InAlAs and GaAs strained buffer layer on the structure and optical property of InAs quantum dots |
| 001722 |
| Synthesis and characterization InP and Ga2O3 nanowires |
| 001726 |
| Surface morphology of GaInP buffer layers and its impact on the lateral distribution of self-organized InP islands |
| 001734 |
| Structural and optical properties of InAs/In0.52Al0.48As self-assembled quantum wires on InP(001) |
| 001735 |
| Structural and optical properties of InAs/GaAs quantum dots emitting at 1.5μm |
| 001738 |
| Sol-gel synthesis and photoluminescence of III-V semiconductor InAs nanocrystals embedded in silica glasses |
| 001739 |
| Sol-gel synthesis and optical properties of size controlled Indium Arsenide nanocrystals embedded in silica glasses |
| 001779 |
| Magnetron sputtering growth of InAs0.3Sb0.7 films on (100) GaAs substrates : Strong effect of growth conditions on film structure |
| 001783 |
| Low-temperature growth of InN by MOCVD and its characterization |
| 001813 |
| Growth and characterization of InN on sapphire substrate by RF-MBE |
| 001819 |
| Exciton states and their entanglement in coupled quantum dots |
| 001831 |
| Effect of the low-temperature buffer thickness on quality of insb grown on GaAs substrate by molecular beam epitaxy |
| 001832 |
| Effect of layer thickness of immiscible alloy In0.52Al0.48As on the morphology of InAs nanostructure grown on In0.52Al0.48As/InP (001) |
| 001842 |
| Continuous-wave operation quantum cascade lasers at 7.95 μm |
| 001849 |
| Changing planar thin film growth into self-assembled island formation by adjusting experimental conditions |
| 001872 |
| Investigations on V-defects in quaternary AlInGaN epilayers |
| 001873 |
| Improvements of InGaN/GaN quantum-well interfaces and radiative efficiency with InN interfacial layers |
| 001874 |
| Controlled carbon nanotube sheathing on ultrafine InP nanowires |
| 001876 |
| Luminescence efficiency of InGaN multiple-quantum-well ultraviolet light-emitting diodes |
| 001878 |
| 20 meV-deep donor level in InN film of 0.76 eV band gap grown by plasma-assisted nitrogen source |
| 001879 |
| Ultrafast valence intersubband hole relaxation in InGaN multiple-quantum-well laser diodes |
| 001885 |
| Indium-assisted synthesis on GaN nanotubes |
| 001886 |
| Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature |
| 001887 |
| Double-transconductance-plateau characteristics in InGaAs/GaAs real-space transfer high-electron-mobility transistor |
| 001888 |
| Study of lateral-carrier transport in InAs quantum-dot heterostructures by optical spectroscopy |
| 001889 |
| Study of AlGaInP multiquantum-well/double heterostructure light-emitting diodes with In-added GaP window layer regrown by antimony-based liquid phase epitaxy |
| 001890 |
| InGaN/AlGaN near-ultraviolet multiple quantum well light-emitting diodes with p-InGaN tunneling contact layer |
| 001891 |
| Growth of InGaN self-assembled quantum dots and their application to photodiodes |
| 001894 |
| Deep-ultraviolet emission from an InGaAs semiconductor laser |
| 001896 |
| On the origin of spin loss in GaMnN/InGaN light-emitting diodes |
| 001897 |
| Observation of coherent interfacial optical phonons in GaInP/GaAs/GaInP single quantum wells |
| 001898 |
| Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions |
| 001903 |
| Mapping of multiple-quantum-well layers and structure of V defects in InGaN/GaN diodes |
| 001904 |
| Interpretation of anomalous temperature dependence of anti-Stokes photoluminescence at GaInP2/GaAs interface |
| 001905 |
| Landau level structures and semimetal-semiconductor transition in strained InAs/GaSb quantum wells |
| 001906 |
| High-power AlGaInP light-emitting diodes with metal substrates fabricated by wafer bonding |
| 001907 |
| Dynamical conductance through InAs/GaSb/InAs and InAs/AlSb/GaSb/AlSb/InAs structures |
| 001909 |
| Synthesis of InN/InP core/sheath nanowires |
| 001910 |
| Mechanism of enhanced luminescence in InxAlyGa1-x-yN quaternary epilayers |
| 001911 |
| Study of InGaP/InGaAs double delta-doped channel heterostructure field-effect transistors |
| 001914 |
| Observation of spontaneous ordering in the optoelectronic material GaInNP |
| 001915 |
| Comment on Piezoelectric effect on Al0.35-δInδGa0.65N/GaN heterostructures [Appl. Phys. Lett. 80, 2684 (2002)] |
| 001916 |
| Electroreflectance study on the polarization field in InGaN/AlInGaN multiple quantum wells |
| 001922 |
| Transport properties of InAs epilayers grown on GaAs substrates by using the prelayer technique |
| 001923 |
| Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy |
| 001942 |
| Study on the perfection of in situ P-injection synthesis LEC-InP single crystals |
| 001946 |
| Study of stimulated emission from InGaN/GaN multiple quantum well structures |
| 001951 |
| Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows |
| 001952 |
| Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition |
| 001953 |
| Steady-state and small signal analysis of terahertz ballistic tunnel transit-time oscillator |
| 001970 |
| Photoluminescence study of InGaN/GaN quantum dots grown on passivated GaN surface |
| 001973 |
| Ordering growth of InAs quantum dots on ultra-thin InGaAs strained layer |
| 001975 |
| Optical property of self-assembled InAs quantum dots in Al0.5Ga0.5As barriers grown by molecular beam epitaxy |
| 001976 |
| Optical properties of highly disordered InGaP by solid-source molecular beam epitaxy with a GaP decomposition source |
| 001984 |
| Micro-raman study of hexagonal InN thin films grown by reactive sputtering on GaAs |
| 001987 |
| MOVPE growth of grade-strained bulk InGaAs/InP for broad-band optoelectronic device applications |
| 001992 |
| Influence of threading dislocations on the properties of InGaN-based multiple quantum wells |
| 001997 |
| InGaN/GaN multi-quantum dot light-emitting diodes |
| 001A08 |
| Growth of heavily Zn-doped InGaAs at low temperature by LP-MOCVD |
| 001A14 |
| Fabrication and complete characterization of polarization insensitive 1310 nm InGaAsP-InP quantum-well semiconductor optical amplifiers |
| 001A24 |
| Effects of V/III ratio on InGaAs and InP grown at low temperature by LP-MOCVD |
| 001A25 |
| Effects of TMIn flow on the interface and optical properties of InGaN/GaN mutiple quantum wells |
| 001A26 |
| Effect of trimethylgallium flow on the structural and optical properties of InGaN/GaN multiple quantum wells |
| 001A37 |
| Characterization of InAs quantum dots on lattice-matched InAlGaAs/InP superlattice structures |
| 001A42 |
| Annealing ambient controlled deep defect formation in InP |
| 001A45 |
| An approach to determine the chemical composition in InGaN/GaN multiple quantum wells |
| 001A52 |
| Breakdown characteristics of InP/InGaAs composite-collector double heterojunction bipolar transistor |
| 001A54 |
| InN island shape and its dependence on growth condition of molecular-beam epitaxy |
| 001A55 |
| Electronic properties of GaAs/GayIn1-yNxAs1-y-xSby superlattices |
| 001A56 |
| Comparison of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes with/without GaInAsP and AIGaInAs Graded-Composition Layers |
| 001A58 |
| Enhancement of room-temperature photoluminescence in InAs quantum dots |
| 001A59 |
| Electron-beam-induced current and cathodoluminescence characterization of InGaAs strain-balanced multiquantum well photovoltaic cells |
| 001A61 |
| Magnetic properties of parabolic quantum dots in the presence of the spin-orbit interaction |
| 001A62 |
| Investigation of InGaP/GaAs heterojunction bipolar transistor with doping graded base |
| 001A63 |
| Comparative hydrogen sensing performances of Pd- and Pt-InGaP metal-oxide-semiconductor Schottky diodes |
| 001A64 |
| Response to Comment on AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy [Appl. Phys. Lett. 83, 3626 (2003)] |
| 001A65 |
| Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n-GaN layers |
| 001A66 |
| Scaling of three-dimensional InN islands grown on GaN(0001) by molecular-beam epitaxy |
| 001A67 |
| Ordering effects on optical transitions in GaxIn1-xP/(Al0.66Ga0.34)yIn1-yP quantum wells studied by photoluminescence and reflectivity spectroscopy |
| 001A69 |
| Improving the Performance of AlGaInP Laser Diode by Oxide Annealing |
| 001A70 |
| Silicon Doping Induced Increment of Quantum Dot Density |
| 001A71 |
| Multiple negative differential resistance of InP/InGaAs superlattice-emitter resonant-tunneling bipolar transistor at room temperature |
| 001A72 |
| Properties of Cu/Au Schottky contacts on InGaP layer |
| 001A74 |
| Piezoelectric, electro-optical, and photoelastic effects in InxGa1-xN/GaN multiple quantum wells |
| 001A76 |
| Absorption of surface acoustic waves by a two-dimensional electron gas in the presence of spin-orbit interaction |
| 001A77 |
| The Comparisons between GaP Window Layers of Double-Heterojunction Light-Emitting Diodes using Various Dopants and Source Melts Regrown by Indium-Addition Liquid Phase Epitaxy |
| 001A79 |
| Large electric-field induced electron drift velocity observed in an InxGa1-xAs-based p-i-n semiconductor nanostructure at T=300 K |
| 001A80 |
| Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths |
| 001A81 |
| Highly strained 1.24-μm InGaAs/GaAs quantum-well lasers |
| 001A84 |
| Transport characteristics of InAs/GaAs quantum-dot infrared photodetectors |
| 001A87 |
| AlGaInP Light Emitting Diode with a Modulation-Doped Superlattice |
| 001A88 |
| Thermal property of tunnel-regenerated multiactive-region light-emitting diodes |
| 001A89 |
| Effect of InGaAs capping layer on the properties of InAs/InGaAs quantum dots and lasers |
| 001A90 |
| Surface band-bending effects on the optical properties of indium gallium nitride multiple quantum wells |
| 001A91 |
| Very Low Threshold Current Operation of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes |
| 001A93 |
| Temperature dependence of photoreflectance in InAs/GaAs quantum dots |
| 001A94 |
| Observation of self-organized superlattice in AlGaInAsSb pentanary alloys |
| 001A97 |
| Enhanced spontaneous emission from InAs/GaAs self-organized quantum dots in a GaAs photonic-crystal-based microcavity |
| 001A99 |
| Characteristics of a field-effect transistor with stacked InAs quantum dots |
| 001B00 |
| Effect of current spreading on luminescence improvement in selectively oxidized AlGaInP light-emitting diodes |
| 001B01 |
| Depletion- and enhancement-mode In0.49Ga0.51P/InGaAs/AlGaAs high-electron-mobility transistors with high-breakdown voltage |
| 001B03 |
| High-Indium-Content InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes |
| 001B04 |
| GaN Metal-Semiconductor-Metal Visible-Blind Photodetectors with Transparent Indium-Tin-Oxide Contact Electrodes |
| 001B05 |
| Persistent photoconductivity in InxAlyGa1-x-yN quaternary alloys |
| 001B06 |
| In0.6Ga0.4As/GaAs quantum-dot infrared photodetector with operating temperature up to 260 K |
| 001B07 |
| Spectral analysis of high-harmonic coherent acoustic phonons in piezoelectric semiconductor multiple quantum wells |
| 001B09 |
| Tunneling through InAs quantum dots in AlGaAs/GaAs double barrier resonant tunneling diodes with InGaAs quantum well emitters |
| 001B10 |
| Differential surface photovoltage spectroscopy characterization of a 1.3 μm InGaAlAs/InP vertical-cavity surface-emitting laser structure |
| 001B11 |
| Comparison of p-Side Down and p-Side Up GaN Light-Emitting Diodes Fabricated by Laser Lift-Off |
| 001B12 |
| Converse piezoelectric effect and photoelastic effect in InGaN/GaN multiple quantum wells |
| 001B13 |
| Mode splitting in photoluminescence spectra of a quantum-dot-embedded microcavity |
| 001B14 |
| Formation and structure of inverted hexagonal pyramid defects in multiple quantum wells InGaN/GaN |
| 001B15 |
| Atomic-scale strain field and In atom distribution in multiple quantum wells InGaN/GaN |
| 001B17 |
| Forbidden transitions and the effective masses of electrons and holes in In1-xGaxAs/InP quantum wells with compressive strain |
| 001B18 |
| Study on dc characteristics of an interesting InP/InGaAs tunneling-emitter bipolar transistor with double heterostructures |
| 001B23 |
| Void formation and failure in InGaN/AlGaN double heterostructures |
| 001B27 |
| Thermodynamic analysis on MOVPE growth of Ga1-xInxP semiconductor |
| 001B29 |
| The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing |
| 001B45 |
| Structure and optical properties of upper In(Ga)As quantum dots on a different seed layer with a thin GaAs spacer layer |
| 001B46 |
| Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0 0 0 1) sapphire substrate |
| 001B47 |
| Strain relaxation of InAs epilayer on GaAs under In-rich conditions |
| 001B53 |
| Raman spectroscopic studies of InAs epilayers grown on the GaAs (001) substrates |
| 001B55 |
| Preparation of ultrafine InN powder by the nitridation of In2O3 or In(OH)3 and its thermal stability |
| 001B58 |
| Preliminary insight into the formation process of InP and GaP nanocrystals |
| 001B77 |
| Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances |
| 001B80 |
| Manipulation of spin dephasing in InAs quantum wires |
| 001B84 |
| Localized exciton dynamics in AlInGaN alloy |
| 001B86 |
| Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells |
| 001B90 |
| In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate |
| 001B91 |
| In0.25Ga0.75As films growth on the thin GaAs/AlAs buffer layer on the GaAs(0 0 1) substrate |
| 001B98 |
| Growth temperature effect on the optical and material properties of AlxInxGa1-x-yN epilayers grown by MOCVD |
| 001B99 |
| Growth of nanoscale InGaN self-assembled quantum dots |
| 001C03 |
| GalnNAs: Growth and characterization |
| 001C13 |
| Electronic structure of vertically stacked InAs self-assembled quantum dots by deep level transient spectroscopy |
| 001C14 |
| Electronic properties of III-V semiconductor heterostructures |
| 001C18 |
| Effects of TMIn flow rate of barrier layer on the optical and structural properties of InxGa1-xN/InyGa1-yN multiple quantum wells |
| 001C23 |
| Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots |
| 001C24 |
| Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs (001) substrate |
| 001C29 |
| Deep level transient spectroscopy of vertically stacked InAs/Al0.5Ga0.5As self-assembled quantum dots |
| 001C33 |
| Correlation of structural and optical investigation of InGaAs/InAlAs quantum cascade laser |
| 001C35 |
| Capacitance-voltage spectroscopy of In0.5Ga0.5As self-assembled quantum dots in double quantum wells under selective photo-excitation |
| 001C46 |
| Abnormal temperature dependence of photoluminescence from self-assembled InAs quantum dots covered by an InAlAs/InGaAs combination layer |
| 001C50 |
| A novel method to realize InGaN self-assembled quantum dots by metalorganic chemical vapor deposition |
| 001C55 |
| Hole emission processes in InAs/GaAs self-assembled quantum dots |
| 001C56 |
| Growth of High-Quality Epitaxial InN Film with High-Speed Reactant Gas by Organometallic Vapor-Phase Epitaxy |
| 001C57 |
| Localized and quantum-well state excitons in AlInGaN laser-diode structure |
| 001C60 |
| Self-assembled GaAs antiwires in In0.53Ga0.47As matrix on (100) InP substrates |
| 001C61 |
| Strong Screening Effect of Photo-Generated Carriers on Piezoelectric Field in In0.13Ga0.87N/In0.03Ga0.97N Quantum Wells |
| 001C62 |
| Metallic wafer bonding for the fabrication of long-wavelength vertical-cavity surface-emitting lasers |
| 001C64 |
| Band-Gap Bowing Parameter of the AlxIn1-xN Derived from Theoretical Simulation |
| 001C66 |
| Strain-induced semimetal-semiconductor transition in InAs/GaSb broken-gap quantum wells |
| 001C68 |
| Degree of ordering in Al0.5In0.5P by Raman scattering |
| 001C69 |
| Deep levels in semi-insulating InP obtained by annealing under iron phosphide ambiance |
| 001C70 |
| Polaron model in self-assembled InAs/GaAs quantum dots- A perturbative approach |
| 001C74 |
| Photoreflectance and photoluminescence spectroscopy of the lattice-matched InGaAs/InAlAs single quantum well |
| 001C75 |
| Ordering parameter and band-offset determination for ordered GaxIn1-xP/(Al0.66Ga0.34)yIn1-yP quantum wells |
| 001C76 |
| Microstructure evolution and failure mechanism for Cu/Au Schottky contacts to InGaP layer |
| 001C78 |
| Effect of InGaP Barrier Thickness on the Performance of 1.3-μm InAsP/InP/InGaP Strain-Compensated Multiple-Quantum-Well Laser Diodes |
| 001C80 |
| Integral and fractional charge filling in a InAs/GaAs quantum dot p-i-n diode by capacitance-voltage measurement |
| 001C81 |
| Photoluminescence study of hydrogen passivation in InAs1-xNx/InGaAs single-quantum well on InP |
| 001C82 |
| Thickness-dependent renormalization of strain effects on self-organized InAs quantum dots grown on GaAs |
| 001C83 |
| Study of InGaP/GaAs/InGaAs high-barrier gate and heterostructure-channel field-effect transistors |
| 001C84 |
| High-density plasma-induced etch damage of wafer-bonded AlGaInP/mirror/Si light-emitting diodes |
| 001C85 |
| Growth and coalescence evolution of InAs on GaAs by molecular beam epitaxy |
| 001C86 |
| Extended radio frequency nonlinear model for power prediction of AlGaAs/InGaAs pseudomorphic high electron mobility transistors |
| 001C87 |
| 1.3 μm InAsP multiquantum well laser diodes with the n-type modulation-doped InAsP/InP/InGaP active region |
| 001C88 |
| Zero-field spin splitting in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates using Shubnikov-de Haas measurements |
| 001C90 |
| Piezoelectric effect on Al0.35-δInδGa0.65N/GaN heterostructures |
| 001C93 |
| Few-electron filling effect in laterally coupled spherical InAs/GaAs quantum-dot system |
| 001C94 |
| Scanning electron filling modulation reflectance of charged InGaAs self-assembled quantum dot |
| 001C96 |
| Real index-guided InGaAlP red lasers with buried tunnel junctions |
| 001C97 |
| Mechanism of enhanced luminescence in InxAlyGa1-x-yN quaternary alloys |
| 001C99 |
| Sulphur passivation of the InGaAsSb/GaSb photodiodes |
| 001D00 |
| Effect of composition inhomogeneity on the photoluminescence of InGaN/GaN multiple quantum wells upon thermal annealing |
| 001D01 |
| Ohmic contacts to p-type GaN mediated by polarization fields in thin InxGa1-xN capping layers |
| 001D02 |
| Nitrogen-induced enhancement of the electron effective mass in InNxAs1-x |
| 001D04 |
| Investigation of the thermal degradation mechanism for Cu/Au Schottky contacts to the InGaP layer |
| 001D05 |
| Characteristics of δ-doped InP heterostructures using In0.34Al0.66As0.85Sb0.15 Schottky layer |
| 001D07 |
| InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular-beam epitaxy |
| 001D08 |
| Low-Voltage-Operation High-Power-Density AlGaAs/InGaAs Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistor for Personal Handy-Phone Handset Application |
| 001D09 |
| Selective growth of single InAs quantum dots using strain engineering |
| 001D11 |
| Direct measurement of piezoelectric field in In0.23Ga0.77N/GaN multiple quantum wells by electrotransmission spectroscopy |
| 001D12 |
| Vapor-solid growth route to single-crystalline indium nitride nanowires |
| 001D18 |
| The structure and current-voltage characteristics of multi-sheet InGaN quantum dots grown by a new multi-step method |
| 001D22 |
| The effects of concomitant In and N incorporation on the photoluminescence of GaInNAs |
| 001D25 |
| Synthesis of oxygen-free nanosized InN by pulse discharge |
| 001D34 |
| Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer |
| 001D36 |
| Strain relaxation of InP film directly grown on GaAs patterned compliant substrate |
| 001D37 |
| Statistical investigation on morphology development of gallium nitride in initial growth stage |
| 001D42 |
| Quasi-thermodynamic analysis of MOVPE growth of GaxAlyIn1-x-yN |
| 001D43 |
| Preparation of InN nanocrystals by solvo-thermal method |
| 001D44 |
| Photoluminescence of InAs self-organized quantum dots on (001)InP substrate with GaAs interlayer |
| 001D57 |
| Low temperature photoluminescence of InAs self-organized quantum dots on (001) InP substrate with GaAs interlayer |
| 001D61 |
| Influence of strain on annealing effects of In(Ga)As quantum dots |
| 001D63 |
| InAsyP1-y/InP quantum wells grown by solid source molecular beam epitaxy using As2 and As4 |
| 001D64 |
| Improved purity of long-wavelength InAsSb epilayers grown by melt epitaxy in fused silica boats |
| 001D70 |
| Growth and optical properties of nanocrystalline Ga0.81In0.19Sb embedded in silica film |
| 001D80 |
| Estimation of InN phase inclusion in InGaN films grown by MOVPE |
| 001D84 |
| Effect on the optical properties and surface morphology of cubic GaN grown by metalorganic chemical vapor deposition using isoelectronic indium surfactant doping |
| 001D85 |
| Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots |
| 001D87 |
| Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry |
| 001D88 |
| Dependence of optical properties on the structure of multi-layer self-organized InAs quantum dots emitting near 1.3 μm |
| 001E05 |
| A novel line-order of InAs quantum dots on GaAs |
| 001E10 |
| A new method to fabricate InGaN quantum dots by metalorganic chemical vapor deposition |
| 001E13 |
| Temperature-dependent contactless electroreflectance and photoluminescence study of GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures |
| 001E14 |
| Optical properties of as-grown and annealed InAs(N)/InGaAsP strained multiple quantum wells |
| 001E15 |
| InAs/GaAs single-electron quantum dot qubit |
| 001E16 |
| Hybridization of electron, light-hole, and heavy-hole states in InAs/GaSb quantum wells |
| 001E17 |
| Comparison of InAs/GaAs Quantum Dot Infrared Photodetector and GaAs/(AlGa)As Superlattice Infrared Photodetector |
| 001E18 |
| Deep Hole Traps Created by Gamma-Ray Irradiation of GaInP |
| 001E19 |
| Correlation of Photoreflectance Spectra with Performance of GaInP/GaAs Heterojunction Bipolar Transistors |
| 001E20 |
| Comparison of InGaP/InGaAs/GaAs and InGaP/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistors |
| 001E22 |
| Effects of In and Ga interdiffusion on the optical gain of InGaN/GaN quantum well |
| 001E23 |
| Polarized-photoreflectance characterization of an InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor structure |
| 001E26 |
| Tunnel-regenerated multiple-active-region light-emitting diodes with high efficiency |
| 001E27 |
| Low-resistance and high-transparency Ni/indium tin oxide ohmic contacts to p-type GaN |
| 001E28 |
| Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys |
| 001E29 |
| Subband electron properties of highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates |
| 001E30 |
| Charging of embedded InAs self-assembled quantum dots by space-charge techniques |
| 001E32 |
| Influence of Barrier Growth Temperature on the Properties of InGaN/GaN Quantum Well |
| 001E35 |
| Surface analysis of (NH4)2Sx-treated InGaN using x-ray photoelectron spectroscopy |
| 001E37 |
| Longitudinal optic phonon-plasmon coupling in δ-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates |
| 001E38 |
| Thermal redistribution of photocarriers between bimodal quantum dots |
| 001E41 |
| Improved n+-GaAs/p+-In0.49Ga0.51P/n-GaAs camel-like gate structure for high-breakdown, low-leakage, and high-temperature applications |
| 001E42 |
| Random telegraph noise in the photoluminescence of individual GaxIn1-xAs quantum dots in GaAs |
| 001E43 |
| High-Power 1.5 μm InGaAsP/InP Strained Quantum Wells Integrated Superluminescent Light Source with Tilted Structure |
| 001E44 |
| Direct-Gap Reduction and Valence-Band Splitting of Ordered Indirect-Gap AlInP2 Studied by Polarized Piezoreflectance |
| 001E45 |
| Etching trenches to effectively create electron quantum wires for single-electron-transistor applications |
| 001E46 |
| Temperature dependence of the radiative recombination zone in InGaN/GaN multiple quantum well light-emitting diodes |
| 001E48 |
| Investigation of indium tin oxide/zinc oxide multilayer ohmic contacts to n-type GaN isotype conjunction |
| 001E49 |
| Effect of thermal annealing on high indium content InGaN/GaN single quantum well structures |
| 001E52 |
| Comparison of optical transitions in InGaN quantum well structures and microdisks |
| 001E53 |
| High-performance InAs/GaAs quantum-dot infrared photodetectors with a single-sided Al0.3Ga0.7As blocking layer |
| 001E55 |
| Near-room-temperature operation of an InAs/GaAs quantum-dot infrared photodetector |
| 001E58 |
| Evolution of island-pit surface morphologies of InAs epilayers grown on GaAs (001) substrates |
| 001E60 |
| Quantum-confined Stark shift in electroreflectance of InAs/InxGa1-xAs self-assembled quantum dots |
| 001E62 |
| Threshold characteristics of 1.55-μm InGaAs/InGaAsP strain-compensated quantum well lasers with zero net strain |
| 001E64 |
| Coherent optical control of acoustic phonon oscillations in InGaN/GaN multiple quantum wells |
| 001E65 |
| Temperature invariant lasing and gain spectra in self-assembled GaInAs quantum wire Fabry-Perot lasers |
| 001E68 |
| Phosphorus-Species-Induced Band-Gap Anomaly in InGaP Grown by Solid-Source Molecular-Beam Epitaxy |
| 001E69 |
| Piezoelectric-field-enhanced lateral ambipolar diffusion coefficient in InGaN/GaN multiple quantum wells |
| 001E70 |
| Characteristics of monolithically integrated two-wavelength laser diodes with aluminum-free active layers |
| 001E71 |
| Persistent photoconductivity in InGaN/GaN multiquantum wells |
| 001E72 |
| Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells |
| 001E78 |
| Growth of InAsN/InGaAs(P) quantum wells on InP by gas source molecular beam epitaxy |
| 001E96 |
| Surface corrugation of In0.15Ga0.85As layers grown on (5 5 3) b-oriented GaAs substrates by molecular beam epitaxy |
| 001E98 |
| Studying the mechanism of ordered growth of InAs quantum dots on GaAs/InP |
| 001F01 |
| Studies on incorporation of As2 and As4 in III-V compound semiconductors with two group V elements grown by molecular beam epitaxy |
| 001F02 |
| Structural anisotropy and optical properties of InxGa1-xAs quantum dots on GaAs(001) |
| 001F03 |
| Structural and optical characterization of nanocrystals of the InAs-InP system embedded in amorphous SiO2 thin films |
| 001F06 |
| Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer |
| 001F07 |
| Self-assembled quantum dots, wires and quantum-dot lasers |
| 001F10 |
| Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy |
| 001F22 |
| Multiple quantum wells and laser structures containing InAs quantum dots grown by molecular-beam epitaxy |
| 001F27 |
| MBE grown 2.0 μm InGaAsSb/AlGaAsSb MQW ridge waveguide laser diodes |
| 001F31 |
| Influence of growth conditions on self-assembled InAs nanostructures grown on (001)InP substrate by molecular beam epitaxy |
| 001F32 |
| Indium doping effect on GaN in the initial growth stage |
| 001F39 |
| Hydrogen neutralization effect in bulk N-type LEC InP materials |
| 001F47 |
| Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy |
| 001F59 |
| Effect of InxGa1-xAs (0≤x≤0.4) capping layer on self-assembled 1.3 μm wavelength InAs/GaAs quantum islands |
| 001F85 |
| Influence of dual incorporation of In and N on the luminescence of GaInNAs/GaAs single quantum wells |
| 001F88 |
| Electron distribution and level occupation in an ensemble of InxGa1-xAs/GaAs self-assembled quantum dots |
| 001F92 |
| Carrier distribution and relaxation-induced defects of InAs/GaAs quantum dots |
| 001F93 |
| Study of current leakage in InAs p-i-n photodetectors |
| 001F94 |
| Investigation of mesa-sidewall effects on direct current and radio frequency characteristics of Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In0.49P pseudomorphic high electron mobility transistors |
| 001F95 |
| Mechanism for photoluminescence in an InyAs1-yN/InxGa1-xAs single quantum well |
| 001F96 |
| High-Temperature Breakdown Characteristics of δ-Doped In0.49Ga0.51P/GaAs/In0.25Ga0.75As/AlGaAs High Electron Mobility Transistor |
| 001F97 |
| X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices |
| 001F99 |
| Detection of terahertz radiation from longitudinal optical phonon-plasmon coupling modes in InSb film using an ultrabroadband photoconductive antenna |
| 002000 |
| Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots |
| 002002 |
| Ellipsometric Study of the Optical Properties of InGaAsN Layers |
| 002003 |
| Electron saturation velocity of GaInP deduced in a GaInP/GaAs/GaInP double heterojunction bipolar transistor |
| 002005 |
| Anomalous Phosphorus Cracker Temperature-Dependent Photoluminescence Spectra of InGaP Grown by Solid Source Molecular Beam Epitaxy |
| 002006 |
| Room temperature polarized photoreflectance characterization of GaAlAs/InGaAs/GaAs high electron mobility transistor structures including the influence of strain relaxation |
| 002007 |
| Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy |
| 002008 |
| Photoelectrochemical etching of InxGa1-xN |
| 002009 |
| Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells |
| 002010 |
| Mechanism of luminescence in InGaN/GaN multiple quantum wells |
| 002011 |
| Phosphorus Vacancy as a Deep Level in AlInP Layers |
| 002013 |
| Tuning of conduction intersublevel absorption wavelengths in (In,Ga)As/GaAs quantum-dot nanostructures |
| 002014 |
| Effect of growth temperature on the electric properties of In0.12Ga0.88As/GaAs p-i-n multiple-quantum-well diodes |
| 002016 |
| Time-resolved photoluminescence study of isoelectronic In-doped GaN films grown by metalorganic vapor-phase epitaxy |
| 002017 |
| In0.34Al0.66As0.85Sb0.15/δ(n+)-InP heterostructure field-effect transistors |
| 002019 |
| Ga0.5In0.5P Barrier Layer for Wet Oxidation of AlAs |
| 002021 |
| Passivation mechanism analysis of sulfur-passivated InGaP surfaces using x-ray photoelectron spectroscopy |
| 002025 |
| Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures |
| 002026 |
| Strain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wire |
| 002027 |
| Spin splitting in pseudomorphic InxGa1-xAs/InyAl1-yAs graded heterostructures |
| 002028 |
| Electron transport in the AlGaAs/InGaAs double-heterostructure pseudomorphic high-electron-mobility transistor |
| 002031 |
| Characteristics of InGaP/GaAs delta-doped heterojunction bipolar transistor |
| 002032 |
| Accurate determination of quasi-Fermi-level separation of semiconductor lasers |
| 002033 |
| Accurate determination of quasi-Fermi-level separation of semiconductor lasers |
| 002034 |
| Wide angle distributed Bragg reflectors for 590 nm amber AlGaInP light-emitting diodes |
| 002035 |
| Experimental determination of local Strain effect on InAs/GaAs self-organized quantum dots |
| 002036 |
| Electrical characterization of isoelectronic In-doping effects in GaN films grown by metalorganic vapor phase epitaxy |
| 002037 |
| Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing |
| 002038 |
| Strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures by x-ray diffraction and photoluminescence |
| 002039 |
| Carrier depletion by defects levels in relaxed In0.2Ga0.8As/GaAs quantum-well Schottky diodes |
| 002043 |
| Abnormal temperature dependence of band-gap energies observed in (InAs)/(GaAs) and (InP)/(GaP) superlattices with strong lateral composition modulation |
| 002047 |
| Two-step method to grow InAs epilayer on GaAs substrate using a new prelayer |
| 002067 |
| Self-ordering of quasi-quantum wire in InAlAs/AlGaAs multilayer nanostructure and its optical anisotropy |
| 002068 |
| Self-assembled InAs quantum wires on InP(001) |
| 002070 |
| Room temperature 1.55 μm emission from InAs quantum dots grown on (001)InP substrate by molecular beam epitaxy |
| 002095 |
| In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE |
| 002115 |
| Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice |
| 002125 |
| Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots |
| 002139 |
| An investigation of the optical spectra and EPR parameters of vanadium in III-V semiconductors (GaAs, GaP, InP) |
| 002149 |
| GaInAsSb/InP heterojunction band offset: Measurement by absorption spectroscopy |
| 002150 |
| Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/InxGa1-xAs/GaAs pseudomorphic transistors |
| 002151 |
| Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/InxGa1-xAs/GaAs pseudomorphic transistors |
| 002152 |
| Barrier height enhancement of Ni/n-type InP Schottky contact using a thin praseodymium interlayer |
| 002153 |
| Barrier height enhancement of Ni/n-type InP Schottky contact using a thin praseodymium interlayer |
| 002154 |
| Barrier height enhancement of Ag/n-GaAs and Ag/n-InP Schottky diodes prepared by P2S5/(NH4)2Sx and HF treatments |
| 002155 |
| High-speed and high-power 1.3 μm InGaAsP/InP selective proton-bombarded buried crescent lasers with optical field attenuation regions |
| 002156 |
| Low-leakage current and high-breakdown voltage GaAs-based heterostructure field-effect transistor with In0.5(Al0.66Ga0.34)0.5P Schottky layer |
| 002157 |
| Positive and negative persistent photoconductivity in a two-side-doped In0.53Ga0.47As/In0.52Al0.48As quantum well |
| 002158 |
| AlGaInP light-emitting diodes with mirror substrates fabricated by wafer bonding |
| 002159 |
| Persistent photoconductivity in InGaP/GaAs heterostructures |
| 002160 |
| Arsenic clusters on the surface of vertically aligned InAs islands on GaAs substrate by annealing |
| 002161 |
| Strain effect on the band structure of InAs/GaAs quantum dots |
| 002162 |
| Influence of growth temperature of InAsP/InP strained multiple quantum wells grown by metalorganic chemical vapor deposition |
| 002163 |
| Application of an AlGaAs/GaAs/InGaAs heterostructure emitter for a resonant-tunneling transistor |
| 002164 |
| Observation of carrier depletion and emission effects on capacitance dispersion in relaxed In0.2Ga0.8As/GaAs quantum wells |
| 002165 |
| Band gap state formation in InP (110) induced by 10 and 100 eV argon ion bombardment |
| 002167 |
| Positive and negative persistent photoconductivities in semimetallic AlxGa1-xSb/InAs quantum wells |
| 002168 |
| A high-temperature thermodynamic model for metalorganic vapor phase epitaxial growth of InGaN |
| 002169 |
| High breakdown voltage symmetric double δ-doped In0.49Ga0.51P/In0.25Ga0.75As/GaAs high electron mobility transistor |
| 002170 |
| Growth and postgrowth rapid thermal annealing of InAsN/InGaAs single quantum well on InP grown by gas source molecular beam epitaxy |
| 002171 |
| Large coherent acoustic-phonon oscillation observed in InGaN/GaN multiple-quantum wells |
| 002172 |
| Organometallic vapor phase epitaxy growth and optical characteristics of almost 1.2 μm GaInNAs three-quantum-well laser diodes |
| 002173 |
| Observation of abnormal capacitance-frequency behavior in In0.12Ga0.88As/GaAs p-i-n superlattice grown at low temperature |
| 002175 |
| Determination of surface state density for GaAs and InAlAs by room temperature photoreflectance |
| 002177 |
| Applications of an In0.53Ga0.25Al0.22As/InP continuous-conduction-band structure for ultralow current operation transistors |
| 002178 |
| Electron-filling modulation reflectance in charged self-assembled InxGa1-xAs quantum dots |
| 002179 |
| Measurement of AlInAsSb/GaInAsSb heterojunction band offset by photoluminescence spectroscopy |
| 002180 |
| AlGaInP/AuBe/glass light-emitting diodes fabricated by wafer bonding technology |
| 002181 |
| Observation of the impulse-like negative-differential resistance of superlatticed resonant-tunneling transistor |
| 002182 |
| Superlatticed negative differential-resistance heterojunction bipolar transistor |
| 002183 |
| Mg-related deep levels in AlInP |
| 002184 |
| Light-induced negative differential resistance in planar InP/InGaAs/InP double-heterojunction p-i-n photodiode |
| 002185 |
| Room-temperature photoreflectance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles |
| 002186 |
| 1/f noise measurements on indium antimonide metal-oxide-semiconductor field-effect transistors |
| 002187 |
| High conduction-band offset of AlInAsSb/InGaAs multiple quantum wells grown by metalorganic vapor phase epitaxy |
| 002190 |
| Optical characterization of visible multiquantum-well semiconductor lasers by collection/excitation modes of scanning near-field optical microscopy |
| 002191 |
| Effect of threading dislocations on electron transport in In0.24Ga0.76N/GaN multiple quantum wells |
| 002192 |
| Application of selective removal of mesa sidewalls for high-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic transistors |
| 002193 |
| Application of a new airbridge-gate structure for high-performance Ga0.51In0.49P/In0.15Ga0.85As/GaAs pseudomorphic field-effect transistors |
| 002194 |
| The optical and electrical studies of hydrogen passivation in GaInP/GaAs heterostructures |
| 002195 |
| Transition of carrier distribution from a strained to relaxed state in InGaAs/GaAs quantum well |
| 002196 |
| Growth and characterization of high-quality InAs0.86Sb0.05P0.09 alloy by liquid-phase epitaxy |
| 002197 |
| Ga0.51In0.49P/InxGa1-xAs/GaAs lattice-matched and strained doped-channel field-effect transistors grown by gas source molecular beam epitaxy |
| 002198 |
| Piezoelectric effects in the optical properties of strained InGaN quantum wells |
| 002200 |
| Determination of the valence-band offset for GaInAsSb/InP heterostructure |
| 002203 |
| Persistent photoconductivity in semimetallic AlxGa1-xSb/InAs quantum wells |
| 002204 |
| Majority- and minority-carrier traps in Te-doped AlInP |
| 002205 |
| Structure and photoluminescence of InGaAs self-assembled quantum dots grown on InP(001) |
| 002207 |
| Reduction of spontaneous surface segregation in (InP)2/(GaP)2 quantum wells grown on tilted substrates |
| 002214 |
| Uniformity enhancement of the self-organized InAs quantum dots |
| 002215 |
| Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(3 1 1)B surfaces |
| 002219 |
| Theoretical studies of the g factor of V3+ in III-V semiconductors |
| 002221 |
| The effect of strain on the miscibility gap in Ga-In-Sb ternary alloy |
| 002228 |
| Substrate surface atomic structure influence on the growth of InAlAs quantum dots |
| 002232 |
| Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures |
| 002233 |
| Structural and optical characterization of InAs nanostructures grown on high-index InP substrates |
| 002235 |
| Structural and infrared absorption properties of self-organized InGaAs/GaAs quantum dots multilayers : Special issue papers on quantum dots |
| 002239 |
| Si doping effect on self-organized InAs/GaAs quantum dots |
| 002240 |
| Self-organization of wire-like InAs nanostructures on InP |
| 002241 |
| Self-organization of the InGaAs/GaAs quantum dots superlattice |
| 002245 |
| RHEED characterization of InAs/GaAs grown by MBE |
| 002253 |
| Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001) : Special issue papers on quantum dots |
| 002260 |
| Nanosecond laser annealing of zinc-doped indium phosphide |
| 002274 |
| Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(100) and high index substrates by molecular beam epitaxy |
| 002289 |
| A safe low temperature route to InAs nanofibers |
| 002291 |
| A low-temperature route to InP nanocrystals |
| 002293 |
| The reduction and enhancement of spontaneous ordering in (InP)2/(GaP)2 quantum wells grown by solid source molecular beam epitaxy |
| 002294 |
| Facet-coating effects on the 1.3-μm strained multiple-quantum-well AlGaInAs/InP laser diodes |
| 002295 |
| Raman scattering of InAs1-x-ySbxPy quaternary alloys |
| 002296 |
| Positron-lifetime study of compensation defects in undoped semi-insulating InP |
| 002297 |
| Raman and x-ray studies of InN films grown by metalorganic vapor phase epitaxy |
| 002298 |
| Photoconductivity in self-organized InAs quantum dots |
| 002299 |
| BCl3/Ar reactive ion etching for gate recessing of GaInP/InGaAs/GaAs pseudomorphic high electron mobility transistors |
| 002301 |
| Thermal properties of InAs0.86Sb0.05P0.09 homostructure diodes |
| 002303 |
| Saturation spectroscopy and electronic-state lifetimes in a magnetic field in InAs/AlxGa1-xSb single quantum wells |
| 002304 |
| P-terminated InP(100) surface studied using a first-principles energy-minimization approach |
| 002305 |
| Application of δ-doped wide-gap collector structure for high-breakdown and low-offset voltage transistors |
| 002308 |
| Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition |
| 002309 |
| Photoreflectance spectroscopy of strained-layer (111)B InGaAs/GaAs quantum well diodes |
| 002310 |
| Erratum: Strain dependence of hole mass and optical anisotropy in (110) quantum wells [J. Appl. Phys. 82, 5711 (1997)] |
| 002311 |
| Reactive ion etching for AlGalnP/GaInP laser structures |
| 002312 |
| Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN |
| 002313 |
| Photoluminescence investigation of GaInP/GaAs multiple quantum wells grown on (001) and (311) B GaAs surfaces by gas source molecular beam epitaxy |
| 002314 |
| BCl3/Ar plasma-induced surface damage in GaInP/InGaAs/GaInP quantum-well high-electron-mobility transistors |
| 002315 |
| High resolution x-ray diffraction study of Bragg peak width in strained InGaAs/InAlAs/InP heterostructures |
| 002316 |
| An elucidation of solid incorporation of InGaN grown by metalorganic vapor phase epitaxy |
| 002317 |
| 650 nm AlGaInP/GaInP compressively strained multi-quantum well light emitting diodes |
| 002318 |
| 0.66 μm InGaP/InGaAlP single quantum well microdisk lasers |
| 002319 |
| Theoretical analysis of the Auger mechanism in a GaInAsSb infrared photovoltaic detector |
| 002320 |
| Stability improvement of selective oxidation during the fabrication of InGaAs/GaAs vertical cavity surface emitting laser |
| 002321 |
| High-temperature and low-threshold-current operation of 1.5 μm AlGaInAs/InP strain-compensated multiple quantum well laser diodes |
| 002322 |
| High-magnetic-field effects on the terahertz mobility of hot electrons in n-type InSb |
| 002323 |
| Electrical characteristics of heterostructure-emitter bipolar transistors using spacer layers |
| 002324 |
| Suppression of electron and hole leakage in 1.3 μm AlGaInAs/InP quantum well lasers using multiquantum barrier |
| 002325 |
| Ordered InAs quantum dots in InAlAs matrix on (001) InP substrates grown by molecular beam epitaxy |
| 002326 |
| Formation of PIn defect in annealed liquid-encapsulated Czochralski InP |
| 002329 |
| Differential reflection dynamics in InAsxP1-x/InP (x≤0.35) strained-multiple-quantum wells |
| 002330 |
| The directionality of quantum confinement on strain-induced quantum-wire lasers |
| 002331 |
| Analysis of Fermi level pinning and surface state distribution in InAlAs heterostructures |
| 002332 |
| Optical modes within III-nitride multiple quantum well microdisk cavities |
| 002333 |
| Magnetospectroscopy of high-purity InP grown by gas source molecular beam epitaxy |
| 002334 |
| Self-organized InAs/GaAs quantum dots grown by gas source molecular beam epitaxy |
| 002335 |
| Characterization of piezoelectric (111)B InGaAs/GaAs p-i-n quantum well structures using photoreflectance spectroscopy |
| 002336 |
| Studies of two-subband occupied electron gas in modulation-doped In0.52Al0.48As/In0.53Ga0.47As single quantum well by far-infrared modulated photoluminescence |
| 002337 |
| Ordering reduction in In0.5Ga0.5P grown by solid source molecular beam epitaxy |
| 002338 |
| Conduction-band offset in a pseudomorphic GaAs/In0.2Ga0.8As quantum well determined by capacitance-voltage profiling and deep-level transient spectroscopy techniques |
| 002339 |
| Alterable temperature-dependent wavelength shifts in (InP)2/(GaP)2 quantum wells |
| 002341 |
| Alignment of misfit dislocations in the In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As/InP heterostructure |
| 002342 |
| Effect of interface roughness and well width on differential reflection dynamics in InGaAs/InP quantum wells |
| 002343 |
| Thermal annealing of Pd/InAlAs Schottky contacts for transistor buried-gate technologies |
| 002344 |
| Reactive ion etching of CHF3+BCl3 for ternary InxAl1-xAs and InxGa1-xAs (x=0.18, 0.3, 0.52) compounds using various In contents |
| 002345 |
| Vacancies and impurities in InP studied using positron lifetime and an improved Doppler-broadening spectrometer |
| 002351 |
| The self-organized In0-25Ga0-75As quantum dots grown by migration enhanced epitaxy |
| 002357 |
| Spontaneously ordered InAs self-assembled quantum dots grown on GaAs/InP substrate |
| 002404 |
| Growth and transport properties of InAs thin films on GaAs |
| 002413 |
| Effects of growth temperature on highly mismatched InAs grown on GaAs substrates by MBE |
| 002414 |
| Effects of growth interruption on self-assembled InAs/GaAs islands |
| 002436 |
| The third subband population in modulation-doped InGaAs/InAlAs heterostructures |
| 002437 |
| Strain dependence of hole mass and optical anisotropy in (110) quantum wells |
| 002438 |
| kp finite-difference method: Band structures and cyclotron resonances of AlxGa1-xSb/InAs quantum wells |
| 002439 |
| Temperature dependence of photoluminescence spectra in InAs/GaAs quantum dot superlattices with large thicknesses |
| 002441 |
| Molecular beam epitaxy growth of Iny2Al1-y2As/In0.73Ga0.27As/Iny1Al1-y1As/ InP P-HEMTs with enhancement conductivity using an intentional nonlattice-matched buffer layer |
| 002442 |
| A novel waveguide structure to reduce beam divergence and threshold current in GaInP/AlGaInP visible quantum-well lasers |
| 002443 |
| Enhanced real-space transfer in δ-doped GaAs/In0.1Ga0.9As/In0.25Ga0.75As two-step channel heterojunctions |
| 002444 |
| Characterization of photoluminescence intensity and efficiency of free excitons in semiconductor quantum well structures |
| 002445 |
| Built-in electric field and surface Fermi level in InP surface-intrinsic n+ structures by modulation spectroscopy |
| 002446 |
| Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix |
| 002448 |
| Negative differential resistance in InGaAs/AlAsSb/InGaAs single-barrier heterostructure |
| 002449 |
| Bistable GaAs-InGaP triangular-barrier optoelectronic switch |
| 002450 |
| Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperature |
| 002451 |
| Normal incident long-wavelength quantum well infrared photodetectors using electron intersubband transitions |
| 002453 |
| Defects in metamorphic InxAl1-xAs (x<0.4) epilayers grown on GaAs substrates |
| 002454 |
| Intraband optical absorption in semiconductor coupled quantum dots |
| 002455 |
| Optical and structural characterization of InAs/GaSb superlattices |
| 002456 |
| The calculation and the photoluminescence characterization of energy levels in a strained GaAs/In0.2Ga0.8As/GaAs quantum well heterostructure for the application of light-emitting real-space transfer devices |
| 002458 |
| Characteristics of InxGa1-xAs/GaAs pseudomorphic modulation doped field effect transistor |
| 002459 |
| Ultraviolet (340-390 nm), room temperature, photoluminescence from InAs nanocrystals embedded in SiO2 matrix |
| 002460 |
| The enhancement of InGaAs Schottky barrier height by the addition of Pr2O3 and In2O3 in the liquid phase epitaxy |
| 002461 |
| Self-formed InGaAs/GaAs quantum dot superlattice and direct observation on strain distribution in the capped superlattice |
| 002462 |
| Gas source molecular beam epitaxy growth of high quality InGaAsP for 0.98 μm Al-free InGaAs/InGaAsP/InGaP laser diodes |
| 002463 |
| Optical characterization of real-space hot-electron transfer in a strained GaAs/In0.2Ga0.8As/GaAs quantum well heterostructure |
| 002464 |
| Comment on High-efficiency energy up-conversion at GaAs-GaInP2 interfaces [Appl. Phys. Lett. 67, 2813 (1995)] |
| 002465 |
| New aspects of K promoted nitridation of the InP(100) surface |
| 002466 |
| InAs room temperature infrared photoconductive detectors grown by molecular-beam epitaxy |
| 002467 |
| Controllable drain cut-in voltage with strong negative differential resistance in GaAs/InGaAs real-space transfer heterostructure |
| 002468 |
| Multiple subband population in delta-doped AlAsSb/InGaAs heterostructures |
| 002469 |
| Magneto-transport properties of semiconductors from flatband magnetocapacitance spectroscopy |
| 002470 |
| Photoluminescence of undoped bulk InP grown by the liquid-encapsulated vertical Bridgman technique |
| 002471 |
| Origins of 1/f noise in indium antimonide photodiodes |
| 002472 |
| Temperature dependence of quantized states in an In0.86Ga0.14As0.3P0.7/InP quantum well heterostructure |
| 002490 |
| Study of GSMBE growth and characteristics of high-quality strained In0.63Ga0.37As/InP quantum wells |
| 002492 |
| Structural study of GaSb, InSb melts with XAFS technique |
| 002495 |
| Scanning tunneling microscopy of III-V compound semiconductor (001) surfaces |
| 002501 |
| MBE growth and characterization of high-quality GaInAsSb/AlGaAsSb strained multiple quantum well structures |
| 002513 |
| GSMBE growth and characterization of InxGa1-xAs/InP strained-layer MQWs in a P-i-N Configuration |
| 002614 |
| Identification of vacancy-type defects in as-grown InP by positron annihilation rate distribution measurements |
| 002615 |
| Identification of vacancy-type defects in As-grown InP by positron annihilation rate distribution measurements |
| 002618 |
| Exciton line broadening and intersubband absorption in quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells |
| 002701 |
| Room-temperature excitons in strained InGaAs/GaAs quantum wells |
| 002703 |
| Photomodulated transmission spectroscopy of InxGa1-xAs/GaAs MQWs under hydrostatic pressure |
| 002717 |
| Growth of GaAs-InP heteromaterials and corresponding strain determination |
| 002726 |
| Critical layer thickness in MOCVD grown InGaAs-GaAs strained quantum wells |
| 002733 |
| A resonant Raman study on phonons in GaInAs/AlInAs multiple quantum wells |
