Ident. | Authors (with country if any) | Title |
---|
000020 |
| Interface layer control and optimization of InAs/GaSb type-II superlattices grown by molecular beam epitaxy |
000023 |
| Influence of Pre-trimethylindium flow treatment on blue light emitting diode |
000037 |
| Controllable synthesis of plasmonic ZnO/Au core/shell nanocable arrays on ITO glass |
000069 |
| Tilt generation and phase separation in metamorphic GaInP buffers grown on GaAs substrates by metal-organic chemical vapor deposition |
000075 |
| The investigation of GaInP solar cell grown by all-solid MBE |
000099 |
| Study on the growth mechanism of tin-doped indium oxide films deposited by direct current pulse magnetron sputtering |
000109 |
| Solution-processed efficient CdTe nanocrystal/CBD-CdS hetero-junction solar cells with ZnO interlayer |
000116 |
| Seed-mediated direct growth of CdSe nanoclusters on substrates |
000125 |
| Pulsed laser deposition and characterization of epitaxial CuInS2 thin films on c-plane sapphire substrates |
000147 |
| Physical Mechanism of Surface Roughening of the Radial Ge-Core/Si-Shell Nanowire Heterostructure and Thermodynamic Prediction of Surface Stability of the InAs-Core/GaAs-Shell Nanowire Structure |
000156 |
| Phase Separation Induced by Au Catalysts in Ternary InGaAs Nanowires |
000160 |
| Optical properties of InN films grown by pressurized-reactor metalorganic vapor phase epitaxy |
000161 |
| Optical and structural studies of dual wavelength InGaN/GaN tunnel-injection light emitting diodes grown by metalorganic chemical vapor deposition |
000166 |
| Observation, morphology evolution and elimination of Te inclusions in CdZnTe:In single crystals |
000193 |
| Investigation of copper indium gallium selenide material growth by selenization of metallic precursors |
000201 |
| Insight into the mechanism of Sb promoted Cu(In,Ga)Se2 formation |
000217 |
| InAs/GaSb type-II superlattice mid-wavelength infrared focal plane array detectors grown by molecular beam epitaxy |
000218 |
| In(OH)3 and In2O3 nanorice and microflowers: morphology transformation and optical properties |
000227 |
| Impact of double-cap procedure on the characteristics of InAs/InGaAsP/ InP quantum dots grown by metal-organic chemical vapor deposition |
000242 |
| Growth of metamorphic InGaP layers on GaAs substrates |
000243 |
| Growth of InAs quantum dots on Si-based GaAs nanowires by controlling the surface adatom diffusion |
000244 |
| Growth and large-scale assembly of InAs/InP core/shell nanowire: effect of shell thickness on electrical characteristics |
000256 |
| Facile preparation of continuous indium metal-organic framework thin films on indium tin oxide glass |
000268 |
| Electrochemical Seed-Mediated Growth of Surface-Enhanced Raman Scattering Active Au(111)-Like Nanoparticles on Indium Tin Oxide Electrodes |
000274 |
| Effects of growth temperature and buffer scheme on characteristics of InP-based metamorphic InGaAs photodetectors |
000303 |
| Controllable preparation of WO3 nanorod arrays by hydrothermal method |
000304 |
| Continuous-Flow MOVPE of Ga-Polar GaN Column Arrays and Core-Shell LED Structures |
000308 |
| Compositionally undulating step-graded InAsyP1-y buffer layer growth by metal-organic chemical vapor deposition |
000367 |
| The saturation density property of (B)InAs/GaAs quantum dots grown by metal-organic chemical vapor deposition |
000388 |
| Synthesis of CuInSe2 monodisperse nanoparticles and the nanorings shape evolution via a green solution reaction route |
000477 |
| Low temperature growth of nanoblade In2O3 thin films by plasma enhanced chemical vapor deposition: Morphology control and lithium storage properties |
000483 |
| Investigation on growth of In2S3 thin films by chemical bath deposition |
000487 |
| Integrated ZnO nanotube arrays as efficient dye-sensitized solar cells |
000503 |
| Hydrothermal synthesis of Cu2S nanocrystalline thin film on indium tin oxide substrate: Morphology, optical and electrical properties |
000515 |
| Heteroepitaxial Growth of GaSb Nanotrees with an Ultra-Low Reflectivity in a Broad Spectral Range |
000517 |
| Growth of large-grain Ag-In-Yb icosahedral quasicrystals and approximant crystals |
000518 |
| Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth |
000576 |
| Effect of growth temperature on surface morphology and structure of InAs/GaSb superlattices grown by metalorganic chemical vapor deposition |
000600 |
| Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD) |
000644 |
| 3D hierarchical ZnIn2S4: The preparation and photocatalytic properties on water splitting |
000664 |
| Theoretical study on critical thicknesses of InGaN grown on (0 0 0 1) GaN |
000675 |
| The effect ofTb doped PbTiO3 inducing layer on texture and tunable property of sol-gel derived Pb0.4Sr0.6TiO3 thin films grown on ITO/glass substrate |
000703 |
| Study of molecular-beam epitaxy growth on patterned GaAs ( 1 0 0) substrates by masked indium ion implantation |
000710 |
| Strain accumulation in InAs/InxGai1-xAs quantum dots |
000711 |
| Strain accumulation in InAs/InxGa1-xAs quantum dots |
000718 |
| Shallow-Deep InGaN Multiple-Quantum-Well System for Dual-Wavelength Emission Grown on Semipolar (1122) Facet GaN |
000739 |
| Preparation of Cu(In,Ga)Se2 thin films by pulse electrodeposition |
000752 |
| Performance of polymer/ZnO hybrid photovoltaic devices determined by reaction time for oriented ZnO nanorod growth |
000773 |
| Novel pulsed electron deposition route to ZnO nanowire arrays |
000774 |
| Novel In2O3 nanostructures fabricated by controlling the kinetics factor for field emission display |
000785 |
| MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers |
000806 |
| Influence of the TEGa flow on the optical and structural properties of InGaN/GaN multiple quantum wells grown by MOCVD |
000823 |
| Improvement of structural and luminescence properties in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers |
000837 |
| High quality InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition |
000841 |
| Growth of oriented polycrystalline α-HgI2 films by ultrasonic-wave-assisted physical vapor deposition |
000842 |
| Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition |
000843 |
| Growth mechanism of vertical compositional inhomogeneities in AlInN films |
000844 |
| Growth and optical properties of tetrapod-like indium-doped ZnO nanorods with a layer-structured surface |
000845 |
| Growth and domain structures of novel piezoelectric crystals Pb(In1/2Nb1/2) O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 |
000846 |
| Growth and characterization of AgGa1-xInxSe2 crystals with high indium contents |
000849 |
| Gallium-doped indium oxide nanoleaves: Structural characterization, growth mechanism and optical properties |
000850 |
| GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy |
000866 |
| Epitaxial Growth of High Quality Nonpolar InN Films on LiGaO2 Substrates |
000913 |
| Ease of control and switching between ordered free-standing arrays of ZnO nanotubes and nanorods on conductive transparent substrates |
000917 |
| Direct synthesis of indium nanoparticles and their application to prepare CuInS2 thin films and solar cells |
000945 |
| Annealing effects of In2O3 thin films on electrical properties and application in thin film transistors |
000A34 |
| Studies on the PEG-Assisted Hydrothermal Synthesis and Growth Mechanism of ZnO Microrod and Mesoporous Microsphere Arrays on the Substrate |
000A36 |
| Structure and optical properties of InN and InAlN films grown by rf magnetron sputtering |
000A56 |
| Rapid growth and characterization of InN nanocolumns on InGaN buffer layers at a low ratio of N/In |
000A74 |
| Performance study of InAs/GaAs quantum dot covered by graded InxGa1-xAs layer |
000B24 |
| InN layers grown by MOCVD on SrTi03 substrates |
000B27 |
| In2O3 nanorod arrays grown at grain-boundary triple junctions of Cu-Sn alloy substrate |
000B38 |
| High Brightness GaN Light Emitting Diodes with Different Barrier Widths in Quantum Wells for General Lighting Application |
000B51 |
| Facile synthesis of SnO2 nanograss array films by hydrothermal method |
000B78 |
| Electrodeposition and optical properties of highly oriented γ-CuI thin films |
000C01 |
| Effect of epilayer's growth temperature on crystalline quality of In As0.6P0.4/InP grown by two-step growth method |
000C08 |
| Different growth mechanisms of bimodal InAs/GaAs QDs |
000C67 |
| Two-step growth of a hierarchical ZnO nanostructure by aqueous thermal decomposition in a neutral solution and its photovoltaic property |
000C80 |
| The synthesis of Sn-doped ZnO nanowires on ITO substrate and their optical properties |
000C81 |
| The properties of direct current sputtering deposited InN thin films under different gas flow rates |
000C83 |
| The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD |
000D14 |
| Syntheses, crystal and electronic structures of two new lead indium phosphates: Pb2In4P6O23 and Pb2InP3O11 |
000D16 |
| Surface characterization of Ag-ITO cermet films prepared by a new sol-gel method |
000D40 |
| Small angle X-ray scattering studies on structural evolution during calcination of sol-gel ITO nano-powders |
000D67 |
| Precise growth control and characterization of strained AlInAs and GaInAs for quantum cascade lasers by GSMBE |
000D76 |
| Photochemical growth of cadmium-rich CdS nanotubes at the air-water interface and their use in photocatalysis |
000D81 |
| Performance of gas source MBE-grown wavelength-extended InGaAs photodetectors with different buffer structures |
000D84 |
| Optimization of AlInGaAs/InGaAs/InAs strain compensated triangular quantum wells grown by gas source molecular beam epitaxy for laser applications in 2.1-2.4 μm range |
000D93 |
| Novel in situ resistance measurement for the investigation of CIGS growth in a selenization process |
000E17 |
| Ir(ppy)3 phosphorescent microrods and nanowires : promising micro-phosphors |
000E34 |
| InGaN nanorod arrays grown by molecular beam epitaxy : Growth mechanism structural and optical properties |
000E47 |
| Growth of One-Dimensional Hierarchical Multilayered Indium Nanostructures |
000E48 |
| Growth of InAs/GaSb type-II superlattices by gas-source molecular-beam epitaxy |
000E51 |
| Growth and characterization of ZnIn2Se4 buffer layer on CuInSe2 thin films |
000E52 |
| Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method |
000E53 |
| Growth and characterization of CuInSe2 thin films prepared by successive ionic layer adsorption and reaction method with different deposition temperatures |
000F01 |
| Effects of Cr-doping on the optical and magnetic properties in ZnO nanoparticles prepared by sol-gel method |
000F04 |
| Effect of gas composition on the growth and electrical properties of boron-doped diamond films |
000F53 |
| Annealing behaviors of long-wavelength InAs/GaAs quantum dots with different growth procedures by metalorganic chemical vapor deposition |
000F86 |
| Ultrathin β-In2S3 Nanobelts : Shape-Controlled Synthesis and Optical and Photocatalytic Properties |
001068 |
| Phase Stabilization and Phonon Properties of Single Crystalline Rhombohedral Indium Oxide |
001076 |
| Optimizing the GaAs capping layer growth of 1.3 μm InAs/GaAs quantum dots by a combined two-temperature and annealing process at low temperatures |
001080 |
| One-Step Aqueous Solvothermal Synthesis of In2O3Nanocrystals |
001106 |
| Large-Scale Synthesis of In2O3 Nanocubes Under Nondynamic Equilibrium Model |
001112 |
| Influence of mechanical agitation on ZnSe electrodeposition in H2SeO3-ZnSO4 aqueous solution |
001120 |
| In Situ Growth of Self-Assembled and Single In2O3 Nanosheets on the Surface of Indium Grains |
001208 |
| Competitive growth of In2O3 nanorods with rectangular cross sections |
001214 |
| Characterization of a-plane InN film grown on r-plane sapphire by MOCVD |
001255 |
| Two-step growth of ZnO films with high conductivity and high roughness |
001267 |
| The growth and field electron emission of InGaN nanowires |
001348 |
| Nanostructured single-crystalline twin disks of zinc oxide |
001349 |
| Nanocomposite multilayer films containing Dawson-type polyoxometalate and cationic phthalocyanine : Fabrication, characterization and bifunctional electrocatalytic properties |
001353 |
| Morphological control of Cu2O micro-nanostructure film by electrodeposition |
001358 |
| Metamorphic growth of 1.25-1.29 μm InGaAs quantum well lasers on GaAs by molecular beam epitaxy |
001359 |
| Metamorphic InGaAs quantum wells for light emission at 1.3-1.6 μm |
001373 |
| In2O3 nanotowers: Controlled synthesis and mechanism analysis |
001388 |
| Heavily carbon-doped p-type InGaAs grown by gas source molecular beam epitaxy for application to heterojunction bipolar transistors |
001390 |
| Growth and characterization of nonlinear optical crystal Lu0.66La0.95Sc2.39 (BO3 )4 |
001392 |
| Growth and characterization of In doped Cd0.8Mn0.2Te single crystal |
001440 |
| Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD |
001464 |
| Controlled growth of nanostructured III-nitride films via a reactive magnetron sputtering method |
001478 |
| Butt-coupled MOVPE growth for high-performance electro-absorption modulator integrated with a DFB laser |
001527 |
| Synthesis and structures of morphology-controlled ZnO nano- and microcrystals |
001547 |
| Structural and optical properties of violet InGaN/AlInGaN light-emitting diodes grown by MOCVD |
001548 |
| Spontaneous growth of indium nanostructures |
001554 |
| Shape-controlled synthesis of ternary chalcogenide ZnIn2S4 and CuIn(S,Se)2 nano-/microstructures via facile solution route |
001580 |
| Optical properties of InN films grown by molecular beam epitaxy at different conditions |
001608 |
| Indium oxide nanostructures : Semiconductor nanowires |
001631 |
| Fabrication and photoelectrochemical properties of porous ZnWO4 film |
001638 |
| Energetics of the growth mode transition in InAs/GaAs(001) small quantum dot formation : A first-principles study |
001641 |
| Electropolymerization of 3-methylthiophene in the presence of a small amount of bithiophene and its usage as hole transport layer in organic light emitting diodes |
001654 |
| Effect of thermal cycling on the growth of intermetallic compounds at the Sn-Zn-Bi-In-P lead-free solder/Cu interface |
001655 |
| Effect of temperature on selenization process of metallic Cu-In alloy precursors |
001681 |
| Catalytic growth of In2O3 nanobelts by vapor transport |
001688 |
| Anisotropic growth of In(OH)3 nanocubes to nanorods and nanosheets via a solution-based seed method |
001709 |
| The effect of the AlxGa1-xN/AIN buffer layer on the properties of GaN/Si(111) film grown by NH3-MBE |
001710 |
| The effect of hydrothermal growth temperature on preparation and photoelectrochemical performance of ZnO nanorod array films |
001721 |
| Synthesis and characterization of In2O3/SnO2 hetero-junction beaded nanowires |
001728 |
| Study on the thermal stability of InN by in-situ laser reflectance system |
001734 |
| Structural and optical properties of InAs/In0.52Al0.48As self-assembled quantum wires on InP(001) |
001770 |
| Optical properties of digital-alloy In0.49(Ga1-zAlz)0.51P/GaAs and InGaP/In0.49(Ga1-zAlz)0.51P multi-quantum wells grown by molecular-beam epitaxy |
001779 |
| Magnetron sputtering growth of InAs0.3Sb0.7 films on (100) GaAs substrates : Strong effect of growth conditions on film structure |
001791 |
| Influence of rapid thermal annealing on InAs/InAlAs/InP quantum wires with different InAs deposited thickness |
001800 |
| In situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy |
001811 |
| Growth mechanisms of CuSCN films electrodeposited on ITO in EDTA-chelated copper(II) and KSCN aqueous solution |
001814 |
| Growth and characterization of InGaN blue LED structure on Si(111) by MOCVD |
001815 |
| GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures |
001830 |
| Effects of In surfactant on the crystalline and photoluminescence properties of GaN nanowires |
001841 |
| Controlled synthesis of In2O3 octahedrons and nanowires |
001845 |
| Comparative study of InAs quantum dots grown on different GaAs substrates by MOCVD |
001863 |
| A novel method for positioning of InAs islands on GaAs (110) |
001930 |
| The fabrication of self-aligned InAs nanostructures on GaAs(331)A substrates |
001934 |
| Synthesis of tin-doped indium oxide nanowires by self-catalytic VLS growth |
001995 |
| Indium phosphide crystal growth from phosphorus-rich melt |
001A00 |
| Hydrothermal synthesis of single crystalline In(OH)3 nanorods and their characterization |
001A07 |
| Growth of nanostructures on composition-modulated InAlAs surfaces |
001B45 |
| Structure and optical properties of upper In(Ga)As quantum dots on a different seed layer with a thin GaAs spacer layer |
001C01 |
| Growing and welding branched-structure semiconducting In2O3 nanowires |
001D12 |
| Vapor-solid growth route to single-crystalline indium nitride nanowires |
001D26 |
| Synthesis of oxygen-deficient indium-tin-oxide (ITO) nanofibers |
001D28 |
| Synthesis and photoluminescence of single-crystalline In2O3 nanowires |
001D37 |
| Statistical investigation on morphology development of gallium nitride in initial growth stage |
001D58 |
| Large-scale synthesis of In2O3 nanowires |
001E06 |
| A novel in situ oxidization-sulfidation growth route via self-purification process to β-In2S3 dendrites |
001E89 |
| Synthesis and characterization of ternary CuInS2 nanorods via a hydrothermal route |
001E98 |
| Studying the mechanism of ordered growth of InAs quantum dots on GaAs/InP |
001F26 |
| Melting, superheating and freezing behaviour of indium interpreted using a nucleation-and-growth model |
001F32 |
| Indium doping effect on GaN in the initial growth stage |
002125 |
| Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots |
002215 |
| Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(3 1 1)B surfaces |
002241 |
| Self-organization of the InGaAs/GaAs quantum dots superlattice |
002245 |
| RHEED characterization of InAs/GaAs grown by MBE |
002283 |
| Effect of growth interruption on the optical properties of InAs/GaAs quantum dots |
002351 |
| The self-organized In0-25Ga0-75As quantum dots grown by migration enhanced epitaxy |
002357 |
| Spontaneously ordered InAs self-assembled quantum dots grown on GaAs/InP substrate |
002391 |
| InAs quantum dots in InAlAs matrix on (0 0 1)InP substrates grown by molecular beam epitaxy |
002414 |
| Effects of growth interruption on self-assembled InAs/GaAs islands |
002694 |
| Twinning in LEC-grown InP crystal |
002882 |
| Deposition of YBa2Cu3O7-x films on Si with conductive indium oxide as a buffer layer |