| Ident. | Authors (with country if any) | Title |
|---|
| 000308 |
| Compositionally undulating step-graded InAsyP1-y buffer layer growth by metal-organic chemical vapor deposition |
| 001872 |
| Investigations on V-defects in quaternary AlInGaN epilayers |
| 001873 |
| Improvements of InGaN/GaN quantum-well interfaces and radiative efficiency with InN interfacial layers |
| 001876 |
| Luminescence efficiency of InGaN multiple-quantum-well ultraviolet light-emitting diodes |
| 001879 |
| Ultrafast valence intersubband hole relaxation in InGaN multiple-quantum-well laser diodes |
| 001884 |
| Cluster size and composition variations in yellow and red light-emitting InGaN thin films upon thermal annealing |
| 001885 |
| Indium-assisted synthesis on GaN nanotubes |
| 001889 |
| Study of AlGaInP multiquantum-well/double heterostructure light-emitting diodes with In-added GaP window layer regrown by antimony-based liquid phase epitaxy |
| 001890 |
| InGaN/AlGaN near-ultraviolet multiple quantum well light-emitting diodes with p-InGaN tunneling contact layer |
| 001891 |
| Growth of InGaN self-assembled quantum dots and their application to photodiodes |
| 001893 |
| Characterization of Large-Area AlGaInP/Mirror/Si Light-Emitting Diodes Fabricated by Wafer Bonding |
| 001896 |
| On the origin of spin loss in GaMnN/InGaN light-emitting diodes |
| 001897 |
| Observation of coherent interfacial optical phonons in GaInP/GaAs/GaInP single quantum wells |
| 001898 |
| Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions |
| 001900 |
| InGaN/GaN Multi-Quantum Well Metal-Insulator Semiconductor Photodetectors with Photo-CVD SiO2 Layers |
| 001901 |
| InGaN/GaN Light Emitting Diodes with a Lateral Current Blocking Structure |
| 001903 |
| Mapping of multiple-quantum-well layers and structure of V defects in InGaN/GaN diodes |
| 001904 |
| Interpretation of anomalous temperature dependence of anti-Stokes photoluminescence at GaInP2/GaAs interface |
| 001905 |
| Landau level structures and semimetal-semiconductor transition in strained InAs/GaSb quantum wells |
| 001906 |
| High-power AlGaInP light-emitting diodes with metal substrates fabricated by wafer bonding |
| 001907 |
| Dynamical conductance through InAs/GaSb/InAs and InAs/AlSb/GaSb/AlSb/InAs structures |
| 001910 |
| Mechanism of enhanced luminescence in InxAlyGa1-x-yN quaternary epilayers |
| 001911 |
| Study of InGaP/InGaAs double delta-doped channel heterostructure field-effect transistors |
| 001914 |
| Observation of spontaneous ordering in the optoelectronic material GaInNP |
| 001915 |
| Comment on Piezoelectric effect on Al0.35-δInδGa0.65N/GaN heterostructures [Appl. Phys. Lett. 80, 2684 (2002)] |
| 001916 |
| Electroreflectance study on the polarization field in InGaN/AlInGaN multiple quantum wells |
| 001917 |
| Ultra-High-Density InGaN Quantum Dots Grown by Metalorganic Chemical Vapor Deposition |
| 001A55 |
| Electronic properties of GaAs/GayIn1-yNxAs1-y-xSby superlattices |
| 001A60 |
| Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31 |
| 001A62 |
| Investigation of InGaP/GaAs heterojunction bipolar transistor with doping graded base |
| 001A63 |
| Comparative hydrogen sensing performances of Pd- and Pt-InGaP metal-oxide-semiconductor Schottky diodes |
| 001A65 |
| Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n-GaN layers |
| 001A66 |
| Scaling of three-dimensional InN islands grown on GaN(0001) by molecular-beam epitaxy |
| 001A67 |
| Ordering effects on optical transitions in GaxIn1-xP/(Al0.66Ga0.34)yIn1-yP quantum wells studied by photoluminescence and reflectivity spectroscopy |
| 001A69 |
| Improving the Performance of AlGaInP Laser Diode by Oxide Annealing |
| 001A72 |
| Properties of Cu/Au Schottky contacts on InGaP layer |
| 001A74 |
| Piezoelectric, electro-optical, and photoelastic effects in InxGa1-xN/GaN multiple quantum wells |
| 001A80 |
| Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths |
| 001A87 |
| AlGaInP Light Emitting Diode with a Modulation-Doped Superlattice |
| 001A90 |
| Surface band-bending effects on the optical properties of indium gallium nitride multiple quantum wells |
| 001A92 |
| Quantum-well-width dependencies of postgrowth thermal annealing effects of InGaN/GaN quantum wells |
| 001B00 |
| Effect of current spreading on luminescence improvement in selectively oxidized AlGaInP light-emitting diodes |
| 001B01 |
| Depletion- and enhancement-mode In0.49Ga0.51P/InGaAs/AlGaAs high-electron-mobility transistors with high-breakdown voltage |
| 001B05 |
| Persistent photoconductivity in InxAlyGa1-x-yN quaternary alloys |
| 001B07 |
| Spectral analysis of high-harmonic coherent acoustic phonons in piezoelectric semiconductor multiple quantum wells |
| 001B08 |
| Strong green luminescence in quaternary InAlGaN thin films |
| 001B11 |
| Comparison of p-Side Down and p-Side Up GaN Light-Emitting Diodes Fabricated by Laser Lift-Off |
| 001B12 |
| Converse piezoelectric effect and photoelastic effect in InGaN/GaN multiple quantum wells |
| 001B14 |
| Formation and structure of inverted hexagonal pyramid defects in multiple quantum wells InGaN/GaN |
| 001B15 |
| Atomic-scale strain field and In atom distribution in multiple quantum wells InGaN/GaN |
| 001C57 |
| Localized and quantum-well state excitons in AlInGaN laser-diode structure |
| 001C58 |
| Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures |
| 001C61 |
| Strong Screening Effect of Photo-Generated Carriers on Piezoelectric Field in In0.13Ga0.87N/In0.03Ga0.97N Quantum Wells |
| 001C66 |
| Strain-induced semimetal-semiconductor transition in InAs/GaSb broken-gap quantum wells |
| 001C75 |
| Ordering parameter and band-offset determination for ordered GaxIn1-xP/(Al0.66Ga0.34)yIn1-yP quantum wells |
| 001C76 |
| Microstructure evolution and failure mechanism for Cu/Au Schottky contacts to InGaP layer |
| 001C78 |
| Effect of InGaP Barrier Thickness on the Performance of 1.3-μm InAsP/InP/InGaP Strain-Compensated Multiple-Quantum-Well Laser Diodes |
| 001C79 |
| Multiple-component photoluminescence decay caused by carrier transport in InGaN/GaN multiple quantum wells with indium aggregation structures |
| 001C83 |
| Study of InGaP/GaAs/InGaAs high-barrier gate and heterostructure-channel field-effect transistors |
| 001C84 |
| High-density plasma-induced etch damage of wafer-bonded AlGaInP/mirror/Si light-emitting diodes |
| 001C87 |
| 1.3 μm InAsP multiquantum well laser diodes with the n-type modulation-doped InAsP/InP/InGaP active region |
| 001C90 |
| Piezoelectric effect on Al0.35-δInδGa0.65N/GaN heterostructures |
| 001C92 |
| Quasiregular quantum-dot-like structure formation with postgrowth thermal annealing of InGaN/GaN quantum wells |
| 001C96 |
| Real index-guided InGaAlP red lasers with buried tunnel junctions |
| 001C97 |
| Mechanism of enhanced luminescence in InxAlyGa1-x-yN quaternary alloys |
| 001C99 |
| Sulphur passivation of the InGaAsSb/GaSb photodiodes |
| 001D00 |
| Effect of composition inhomogeneity on the photoluminescence of InGaN/GaN multiple quantum wells upon thermal annealing |
| 001D01 |
| Ohmic contacts to p-type GaN mediated by polarization fields in thin InxGa1-xN capping layers |
| 001D04 |
| Investigation of the thermal degradation mechanism for Cu/Au Schottky contacts to the InGaP layer |
| 001D11 |
| Direct measurement of piezoelectric field in In0.23Ga0.77N/GaN multiple quantum wells by electrotransmission spectroscopy |
| 001E14 |
| Optical properties of as-grown and annealed InAs(N)/InGaAsP strained multiple quantum wells |
| 001E16 |
| Hybridization of electron, light-hole, and heavy-hole states in InAs/GaSb quantum wells |
| 001E18 |
| Deep Hole Traps Created by Gamma-Ray Irradiation of GaInP |
| 001E22 |
| Effects of In and Ga interdiffusion on the optical gain of InGaN/GaN quantum well |
| 001E23 |
| Polarized-photoreflectance characterization of an InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor structure |
| 001E26 |
| Tunnel-regenerated multiple-active-region light-emitting diodes with high efficiency |
| 001E27 |
| Low-resistance and high-transparency Ni/indium tin oxide ohmic contacts to p-type GaN |
| 001E28 |
| Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys |
| 001E32 |
| Influence of Barrier Growth Temperature on the Properties of InGaN/GaN Quantum Well |
| 001E33 |
| Gamma-Ray Induced Deep Electron Traps in GaInP |
| 001E35 |
| Surface analysis of (NH4)2Sx-treated InGaN using x-ray photoelectron spectroscopy |
| 001E36 |
| Enhanced luminance of ZnGa2O4 phosphor by In2O3 doping |
| 001E41 |
| Improved n+-GaAs/p+-In0.49Ga0.51P/n-GaAs camel-like gate structure for high-breakdown, low-leakage, and high-temperature applications |
| 001E46 |
| Temperature dependence of the radiative recombination zone in InGaN/GaN multiple quantum well light-emitting diodes |
| 001E48 |
| Investigation of indium tin oxide/zinc oxide multilayer ohmic contacts to n-type GaN isotype conjunction |
| 001E49 |
| Effect of thermal annealing on high indium content InGaN/GaN single quantum well structures |
| 001E51 |
| Band-Gap Bowing Parameter of the InxGa1-xN Derived From Theoretical Simulation |
| 001E52 |
| Comparison of optical transitions in InGaN quantum well structures and microdisks |
| 001E54 |
| GaN and InGaN Metal-Semiconductor-Metal Photodetectors with Different Schottky Contact Metals |
| 001E62 |
| Threshold characteristics of 1.55-μm InGaAs/InGaAsP strain-compensated quantum well lasers with zero net strain |
| 001E63 |
| Microtwin formation mechanism in GaP/AlGaInP/GaAs double heterostructure light-emitting diodes |
| 001E64 |
| Coherent optical control of acoustic phonon oscillations in InGaN/GaN multiple quantum wells |
| 001E68 |
| Phosphorus-Species-Induced Band-Gap Anomaly in InGaP Grown by Solid-Source Molecular-Beam Epitaxy |
| 001E69 |
| Piezoelectric-field-enhanced lateral ambipolar diffusion coefficient in InGaN/GaN multiple quantum wells |
| 001E70 |
| Characteristics of monolithically integrated two-wavelength laser diodes with aluminum-free active layers |
| 001E71 |
| Persistent photoconductivity in InGaN/GaN multiquantum wells |
| 001E72 |
| Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells |
| 001F85 |
| Influence of dual incorporation of In and N on the luminescence of GaInNAs/GaAs single quantum wells |
| 001F86 |
| Stimulated-emission spectra of high-indium-content InGaN/GaN multiple-quantum-well structures |
| 001F91 |
| Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells |
| 001F94 |
| Investigation of mesa-sidewall effects on direct current and radio frequency characteristics of Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In0.49P pseudomorphic high electron mobility transistors |
| 002001 |
| Influence of InxGa1-xAs (0≤x≤0.3) Cap Layer on Structural and Optical Properties of Self-assembled InAs/GaAs Quantum Dots |
| 002003 |
| Electron saturation velocity of GaInP deduced in a GaInP/GaAs/GaInP double heterojunction bipolar transistor |
| 002005 |
| Anomalous Phosphorus Cracker Temperature-Dependent Photoluminescence Spectra of InGaP Grown by Solid Source Molecular Beam Epitaxy |
| 002007 |
| Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy |
| 002008 |
| Photoelectrochemical etching of InxGa1-xN |
| 002009 |
| Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells |
| 002010 |
| Mechanism of luminescence in InGaN/GaN multiple quantum wells |
| 002016 |
| Time-resolved photoluminescence study of isoelectronic In-doped GaN films grown by metalorganic vapor-phase epitaxy |
| 002019 |
| Ga0.5In0.5P Barrier Layer for Wet Oxidation of AlAs |
| 002021 |
| Passivation mechanism analysis of sulfur-passivated InGaP surfaces using x-ray photoelectron spectroscopy |
| 002031 |
| Characteristics of InGaP/GaAs delta-doped heterojunction bipolar transistor |
| 002032 |
| Accurate determination of quasi-Fermi-level separation of semiconductor lasers |
| 002033 |
| Accurate determination of quasi-Fermi-level separation of semiconductor lasers |
| 002034 |
| Wide angle distributed Bragg reflectors for 590 nm amber AlGaInP light-emitting diodes |
| 002036 |
| Electrical characterization of isoelectronic In-doping effects in GaN films grown by metalorganic vapor phase epitaxy |
| 002040 |
| Stimulated emission study of InGaN/GaN multiple quantum well structures |
| 002041 |
| Coherent Acoustic Phonon Oscillations in Semiconductor Multiple Quantum Wells with Piezoelectric Fields |
| 002043 |
| Abnormal temperature dependence of band-gap energies observed in (InAs)/(GaAs) and (InP)/(GaP) superlattices with strong lateral composition modulation |
| 002062 |
| Study of AlGaAsSb/InGaAsSb strained quantum well grown by molecular beam epitaxy on GaSb(100) |
| 002149 |
| GaInAsSb/InP heterojunction band offset: Measurement by absorption spectroscopy |
| 002156 |
| Low-leakage current and high-breakdown voltage GaAs-based heterostructure field-effect transistor with In0.5(Al0.66Ga0.34)0.5P Schottky layer |
| 002158 |
| AlGaInP light-emitting diodes with mirror substrates fabricated by wafer bonding |
| 002159 |
| Persistent photoconductivity in InGaP/GaAs heterostructures |
| 002167 |
| Positive and negative persistent photoconductivities in semimetallic AlxGa1-xSb/InAs quantum wells |
| 002168 |
| A high-temperature thermodynamic model for metalorganic vapor phase epitaxial growth of InGaN |
| 002169 |
| High breakdown voltage symmetric double δ-doped In0.49Ga0.51P/In0.25Ga0.75As/GaAs high electron mobility transistor |
| 002171 |
| Large coherent acoustic-phonon oscillation observed in InGaN/GaN multiple-quantum wells |
| 002179 |
| Measurement of AlInAsSb/GaInAsSb heterojunction band offset by photoluminescence spectroscopy |
| 002180 |
| AlGaInP/AuBe/glass light-emitting diodes fabricated by wafer bonding technology |
| 002190 |
| Optical characterization of visible multiquantum-well semiconductor lasers by collection/excitation modes of scanning near-field optical microscopy |
| 002191 |
| Effect of threading dislocations on electron transport in In0.24Ga0.76N/GaN multiple quantum wells |
| 002192 |
| Application of selective removal of mesa sidewalls for high-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic transistors |
| 002193 |
| Application of a new airbridge-gate structure for high-performance Ga0.51In0.49P/In0.15Ga0.85As/GaAs pseudomorphic field-effect transistors |
| 002194 |
| The optical and electrical studies of hydrogen passivation in GaInP/GaAs heterostructures |
| 002197 |
| Ga0.51In0.49P/InxGa1-xAs/GaAs lattice-matched and strained doped-channel field-effect transistors grown by gas source molecular beam epitaxy |
| 002198 |
| Piezoelectric effects in the optical properties of strained InGaN quantum wells |
| 002203 |
| Persistent photoconductivity in semimetallic AlxGa1-xSb/InAs quantum wells |
| 002207 |
| Reduction of spontaneous surface segregation in (InP)2/(GaP)2 quantum wells grown on tilted substrates |
| 002293 |
| The reduction and enhancement of spontaneous ordering in (InP)2/(GaP)2 quantum wells grown by solid source molecular beam epitaxy |
| 002303 |
| Saturation spectroscopy and electronic-state lifetimes in a magnetic field in InAs/AlxGa1-xSb single quantum wells |
| 002305 |
| Application of δ-doped wide-gap collector structure for high-breakdown and low-offset voltage transistors |
| 002308 |
| Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition |
| 002311 |
| Reactive ion etching for AlGalnP/GaInP laser structures |
| 002312 |
| Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN |
| 002313 |
| Photoluminescence investigation of GaInP/GaAs multiple quantum wells grown on (001) and (311) B GaAs surfaces by gas source molecular beam epitaxy |
| 002316 |
| An elucidation of solid incorporation of InGaN grown by metalorganic vapor phase epitaxy |
| 002317 |
| 650 nm AlGaInP/GaInP compressively strained multi-quantum well light emitting diodes |
| 002318 |
| 0.66 μm InGaP/InGaAlP single quantum well microdisk lasers |
| 002323 |
| Electrical characteristics of heterostructure-emitter bipolar transistors using spacer layers |
| 002324 |
| Suppression of electron and hole leakage in 1.3 μm AlGaInAs/InP quantum well lasers using multiquantum barrier |
| 002332 |
| Optical modes within III-nitride multiple quantum well microdisk cavities |
| 002337 |
| Ordering reduction in In0.5Ga0.5P grown by solid source molecular beam epitaxy |
| 002339 |
| Alterable temperature-dependent wavelength shifts in (InP)2/(GaP)2 quantum wells |
| 002438 |
| kp finite-difference method: Band structures and cyclotron resonances of AlxGa1-xSb/InAs quantum wells |
| 002442 |
| A novel waveguide structure to reduce beam divergence and threshold current in GaInP/AlGaInP visible quantum-well lasers |
| 002449 |
| Bistable GaAs-InGaP triangular-barrier optoelectronic switch |
| 002450 |
| Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperature |
| 002455 |
| Optical and structural characterization of InAs/GaSb superlattices |
| 002457 |
| Effect of well thickness on the two-dimensional electron-hole system in AlxGa1-xSb/InAs quantum wells |
