| Ident. | Authors (with country if any) | Title |
|---|
| 000078 |
| The effects of injector doping densities on lasing properties of InP-based quantum cascade lasers at 4.3 μm |
| 000113 |
| Single InAs Quantum Dot Grown at the Junction of Branched Gold-Free GaAs Nanowire |
| 000119 |
| Resolving exciton diffusion in InGaAs quantum wells using micro-photoluminescence mapping with a lateral excitation |
| 000120 |
| Reducing self-compensating Mn interstitials in (Ga, Mn)As via nanostructure engineering |
| 000147 |
| Physical Mechanism of Surface Roughening of the Radial Ge-Core/Si-Shell Nanowire Heterostructure and Thermodynamic Prediction of Surface Stability of the InAs-Core/GaAs-Shell Nanowire Structure |
| 000156 |
| Phase Separation Induced by Au Catalysts in Ternary InGaAs Nanowires |
| 000188 |
| Large energy band-gap tuning of 980 nm InGaAs/InGaAsP quantum well structure via quantum well intermixing |
| 000209 |
| Influence of GaAs(0 01 ) pregrowth surface morphology and reconstruction on the growth of InGaAs layers |
| 000213 |
| InP/InGaAs/InP DHBT structures with high carbon-doped base grown by gas source molecular beam epitaxy |
| 000235 |
| Highly Responsive Ultrathin GaS Nanosheet Photodetectors on Rigid and Flexible Substrates |
| 000236 |
| High-speed direct modulation unidirectional emission microring lasers |
| 000242 |
| Growth of metamorphic InGaP layers on GaAs substrates |
| 000274 |
| Effects of growth temperature and buffer scheme on characteristics of InP-based metamorphic InGaAs photodetectors |
| 000352 |
| Wetting layers effect on InAs/GaAs quantum dots |
| 000367 |
| The saturation density property of (B)InAs/GaAs quantum dots grown by metal-organic chemical vapor deposition |
| 000379 |
| Temperature dependent empirical pseudopotential theory for self-assembled quantum dots |
| 000423 |
| Self-Assembled InGaAs Quantum Dot Clusters with Controlled Spatial and Spectral Properties |
| 000525 |
| Formation Mechanism and Optical Properties of InAs Quantum Dots on the Surface of GaAs Nanowires |
| 000541 |
| Experimental Investigation of Border Trap Generation in InGaAs nMOSFETs With Al2O3 Gate Dielectric Under PBTI Stress |
| 000567 |
| Effects of p-type doping on the optical properties of InAs/GaAs quantum dots |
| 000609 |
| Calculation of critical size of coherent InAs quantum dot on GaAs substrate |
| 000657 |
| Tuning of electron g factors by electric fields in asymmetric InAs quantum dot molecules |
| 000682 |
| The I-V characteristics of InAs/GaAs quantum dot laser |
| 000703 |
| Study of molecular-beam epitaxy growth on patterned GaAs ( 1 0 0) substrates by masked indium ion implantation |
| 000730 |
| Quantum dot lasers grown by gas source molecular-beam epitaxy |
| 000758 |
| Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy |
| 000763 |
| Optically induced current oscillation in a modulation-doped field-effect transistor embedded with InAs quantum dots |
| 000805 |
| Influence of thermal annealing duration of buffer layer on the crystalline quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD |
| 000811 |
| InP/InGaAs/InP DHBT structures with graded composition base grown by gas source molecular beam epitaxy |
| 000842 |
| Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition |
| 000850 |
| GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy |
| 000863 |
| Extrinsic Base Surface Passivation in Terahertz GaAsSb/InP DHBTs Using InGaAsP Ledge Structures |
| 000868 |
| Enhanced optical properties of InAs/GaAs quantum dots grown by radio-frequency hydrogen plasma-assisted molecular beam epitaxy |
| 000906 |
| Effect of built-in electric field in photovoltaic InAs quantum dot embedded GaAs solar cell |
| 000908 |
| Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy |
| 000A05 |
| Temperature dependent photoluminescence of an In(Ga)As/GaAs quantum dot system with different areal density |
| 000A39 |
| Strained InGaAs/GaAs Quantum-Well Laser Emitting at 1054 nm |
| 000A74 |
| Performance study of InAs/GaAs quantum dot covered by graded InxGa1-xAs layer |
| 000A84 |
| Observation of spin-dependent quantum jumps via quantum dot resonance fluorescence |
| 000B02 |
| Light-splitting photovoltaic system utilizing two dual-junction solar cells |
| 000B16 |
| Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density |
| 000B17 |
| Integration of GaAs /In0.1Ga0.9As/AlAs resonance tunneling heterostructures into micro-electro-mechanical systems for sensor applications |
| 000B26 |
| InAs/GaAs quantum dot lasers grown by gas-source molecular-beam epitaxy |
| 000B29 |
| Impedance spectroscopy characterization of proton-irradiated GaInP/GaAs/Ge triple-junction solar cells |
| 000C08 |
| Different growth mechanisms of bimodal InAs/GaAs QDs |
| 000C34 |
| Abnormal temperature dependent photoluminescence of self-assembled InAs/GaAs surface quantum dots with high areal density |
| 000C52 |
| 1.3 μm InAs/GaAs quantum dots with broad emission spectra |
| 000C87 |
| The effects of indium segregation on the valence band structure and optical gain of GaInAs/GaAs quantum wells |
| 000D69 |
| Polarization of emission from self-assembled quantum dots and its application to the optical characterization of structure |
| 000D81 |
| Performance of gas source MBE-grown wavelength-extended InGaAs photodetectors with different buffer structures |
| 000D84 |
| Optimization of AlInGaAs/InGaAs/InAs strain compensated triangular quantum wells grown by gas source molecular beam epitaxy for laser applications in 2.1-2.4 μm range |
| 000D86 |
| Optical properties of amorphous III-V compound semiconductors from first principles study |
| 000E52 |
| Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method |
| 000E87 |
| Electronic structure of quantum dots in (111) direction |
| 000E90 |
| Electron and hole effective masses in self-assembled quantum dots |
| 000F12 |
| Direct observation of single InAs/GaAs quantum dot spectrum without mesa or mask |
| 000F52 |
| Anomalous coarsening of self-assembled InAs quantum dots on vicinal GaAs (100) substrates |
| 000F53 |
| Annealing behaviors of long-wavelength InAs/GaAs quantum dots with different growth procedures by metalorganic chemical vapor deposition |
| 001005 |
| The defect density of a SiNx /In0.53Ga0.47As interface passivated using (NH4)2Sx |
| 001034 |
| Strain relaxation and surface morphology of high indium content InAlAs metamorphic buffers with reverse step |
| 001061 |
| Polarization dependence of absorption in strongly vertically coupled InAs/GaAs quantum dots for two-color far-infrared photodetector |
| 001062 |
| Piezoresistivity in GaAs/InxGa1-xAs/AlAs superlattice structures |
| 001076 |
| Optimizing the GaAs capping layer growth of 1.3 μm InAs/GaAs quantum dots by a combined two-temperature and annealing process at low temperatures |
| 001078 |
| Optical transitions of InAs/In0.36Ga0.64As/GaAs(311B) surface quantum dots clearly identified by the piezoreflectance technique |
| 001103 |
| Linear polarization in the emission spectra of multiexciton states in InAs/GaAs self-assembled quantum dots |
| 001107 |
| Landé g factors in elongated InAs/GaAs self-assembled quantum dots |
| 001125 |
| Hydrostatic pressure effects on impurity states in InAs/GaAs quantum dot |
| 001159 |
| Emission dynamics of InAs self-assembled quantum dots with different cap layer structures |
| 001164 |
| Electron dynamics in modulation p-doped InGaAs/GaAs quantum dots |
| 001180 |
| Effects of accumulated strain on the surface and optical properties of stacked 1.3 μm InAs/GaAs quantum dot structures |
| 001186 |
| Effect of buffer layer thickness and epilayer growth temperature on crystalline quality of InAs0.9Sb0.1 grown by MOCVD |
| 001192 |
| Direct observation of coherent spin transfer processes in an InGaAs/GaAs quantum well via two-color time-resolved Kerr rotation measurements |
| 001200 |
| Degradation behaviors of electrical properties of GaInP/GaAs/Ge solar cells under <200 keV proton irradiation |
| 001250 |
| Weak antilocalization and beating pattern in an InGaAs/InAlAs quantum well |
| 001252 |
| Unselective regrowth buried heterostructure long-wavelength superluminescent diode realized with MOVPE |
| 001254 |
| Ultrafast all-optical polarization switching based on "virtual excitation" of InGaAs(P) MQWs |
| 001260 |
| The state filling effect in p-doped InGaAs/GaAs quantum dots |
| 001315 |
| Rapid photoluminescence quenching in GaInNAs quantum wells at low temperature |
| 001318 |
| Pseudospin in Si δ-doped InAlAs/InGaAs/InAlAs single quantum well |
| 001328 |
| Photon emitting, absorption and reconstruction of photons |
| 001335 |
| Optimization of superlattice thermoelectric materials and microcoolers |
| 001351 |
| Multiple confined-state transitions within surface quantum dots by a piezomodulation reflectance study |
| 001358 |
| Metamorphic growth of 1.25-1.29 μm InGaAs quantum well lasers on GaAs by molecular beam epitaxy |
| 001359 |
| Metamorphic InGaAs quantum wells for light emission at 1.3-1.6 μm |
| 001385 |
| High-power InGaAs VCSEL's single devices and 2-D arrays |
| 001388 |
| Heavily carbon-doped p-type InGaAs grown by gas source molecular beam epitaxy for application to heterojunction bipolar transistors |
| 001397 |
| Fabrication of ultra-low density and long-wavelength emission InAs quantum dots |
| 001400 |
| Fabrication of InGaAlAs MQW buried heterostructure lasers by narrow stripe selective MOVPE |
| 001403 |
| Eye-safe compact scanning LIDAR technology |
| 001404 |
| Experimental and numerical study on AlGaInAs/AlGaAs distributed feedback lasers with GaInP gratings |
| 001405 |
| Equilateral-triangle-resonator injection lasers with directional emission |
| 001442 |
| Effect of size non-uniformity on photoluminescence from ensembles of InAs quantum dots embedded in GaAs |
| 001444 |
| Effect of inter-level relaxation and cavity length on double-state lasing performance of quantum dot lasers |
| 001447 |
| Effect of electron-hole spatial correlation on spin relaxation dynamics in InAs submonolayer |
| 001488 |
| A portable interrogation system based on the linear InGaAs photodiode array and volume phase grating |
| 001495 |
| 1.3 μm gain coupled DFB laser with InGaAlAs MQW grown on absorptive InGaAsP corrugation |
| 001514 |
| The uniformity of InGaAs in InP/InGaAs/InP by microwave photoconductivity decay (μ-PCD) carrier lifetime measurement |
| 001518 |
| The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 μm wavelength GaInNAs/GaAs quantum well with high indium content |
| 001520 |
| The effects of a stress field and chemical diffusion on electronic behaviour in InAs/GaAs quantum dots |
| 001522 |
| Temperature dependence of surface quantum dots grown under frequent growth interruption |
| 001523 |
| Temperature dependence of interband transition energy in InGaAsN strain-compensated quantum-well and ridge-waveguide lasers fabricated with pulsed anodic oxidation |
| 001524 |
| Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots |
| 001539 |
| Study of nucleation positions of InAs islands on stripe-patterned GaAs (100) substrate |
| 001549 |
| Spin-splitting enhanced by many-body effects in a two-dimensional electron gas in the presence of the Rashba spin-orbit interaction |
| 001550 |
| Spectral properties and energy transfer of Yb,Er: GdVO4 crystal |
| 001569 |
| Piezomodulated reflectance study of self-assembled InAs quantum dots-in-a-well |
| 001581 |
| Optical properties of InGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy |
| 001582 |
| Optical and local current studies on InAs/GaAs quantum dots |
| 001588 |
| Narrow stripe selective growth of oxide-free InGaAlAs/InGaAlAs MQWs by ultra-low pressure MOVPE |
| 001589 |
| Narrow stripe selective growth of InGaAlAs waveguides used for buried heterostructure lasers |
| 001590 |
| Multiplication characteristics of InP/InGaAs avalanche photodiodes with a thicker charge layer |
| 001591 |
| Monolithic integration of electroabsorption modulator and DFB laser for 10-Gb/s transmission |
| 001594 |
| MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting |
| 001595 |
| Low temperature step-graded InAlAs/GaAs metamorphic buffer layers grown by molecular beam epitaxy |
| 001603 |
| Influence of dislocation stress field on distribution of quantum dots |
| 001609 |
| InGaP/GaAs heterojunction bipolar transistor grown by solid-source molecular beam epitaxy with a GaP decomposition source |
| 001614 |
| High-quality multiple quantum wells selectively grown with tapered masks by ultra-low-pressure MOCVD |
| 001615 |
| High-performance EML grown on taper-masked pattern substrates by ultra-low-pressure MOCVD |
| 001618 |
| High performance of gated-mode single-photon detector at 1.55 μm |
| 001633 |
| Experimental study of NRZ format wavelength conversion using electroabsorption modulator |
| 001638 |
| Energetics of the growth mode transition in InAs/GaAs(001) small quantum dot formation : A first-principles study |
| 001648 |
| Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy |
| 001658 |
| Effect of GaAs(1 0 0) 2° surface misorientation on the formation and optical properties of MOCVD grown InAs quantum dots |
| 001662 |
| Direct wafer bonding technology employing vacuum-cavity pre-bonding |
| 001684 |
| Band gap blue shift of InGaAs/InP multiple quantum wells by different dielectric film coating and annealing |
| 001689 |
| Analysis and optimization of an InGaAsP/InP waveguide variable optical attenuator |
| 001693 |
| A 1.5 μm n-type InGaAsP/InGaAsP modulation-doped multiple quantum well DFB laser by MOCVD |
| 001701 |
| Time-dependent transport properties in quantum well with thin inserted layer |
| 001713 |
| The effect of In content on high-density InxGa1-xAs quantum dots |
| 001745 |
| Screening length and quantum and transport mobilities of a heterojunction in the presence of the Rashba effect |
| 001747 |
| Room temperature 1.25 μm emission from high indium content InxGa1-xAs/GaAs quantum wells grown by molecular beam epitaxy |
| 001758 |
| Polarization dependent characteristics of a resonant cavity enhanced photodetector |
| 001761 |
| Photoluminescence pressure coefficients of InAs/GaAs quantum dots |
| 001770 |
| Optical properties of digital-alloy In0.49(Ga1-zAlz)0.51P/GaAs and InGaP/In0.49(Ga1-zAlz)0.51P multi-quantum wells grown by molecular-beam epitaxy |
| 001776 |
| Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 μm (InyGa1-yAs/GaAs1-xSbx)/GaAs bilayer quantum wells |
| 001784 |
| Low threshold distribution feedback quantum cascade lasers at 7.6μm grown by gas source molecular beam epitaxy |
| 001798 |
| InGaAs/InGaAsP microavity laser with directional output waveguide |
| 001799 |
| InAs/GaAs quantum-dot superluminescent diodes with 110 nm bandwidth |
| 001802 |
| Improved analytical method for determination of small-signal equivalent-circuit model parameters for InP/InGaAs HBTs |
| 001807 |
| High-temperature electron-hole liquid and dynamics of Fermi excitons in a In0.65Al0.35As/Al0.4Ga0.6As quantum dot array |
| 001809 |
| High power output and temperature characteristics of 1.06μm diode array module |
| 001815 |
| GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures |
| 001819 |
| Exciton states and their entanglement in coupled quantum dots |
| 001835 |
| Dual wavelength 650-780nm laser diodes |
| 001842 |
| Continuous-wave operation quantum cascade lasers at 7.95 μm |
| 001845 |
| Comparative study of InAs quantum dots grown on different GaAs substrates by MOCVD |
| 001846 |
| Comments on: Microwave noise modeling for InP-InGaAs HBTs. Authors' reply |
| 001848 |
| Characteristics of oxide-free InGaAlAs layers grown by narrow stripe selective MOVPE |
| 001849 |
| Changing planar thin film growth into self-assembled island formation by adjusting experimental conditions |
| 001852 |
| Applications of ICP in optoelectronic device fabrication |
| 001856 |
| An experimental investigation of Zn diffusion into InP and InGaAs |
| 001863 |
| A novel method for positioning of InAs islands on GaAs (110) |
| 001869 |
| 980 nm high power strained quantum well lasers array fabricated by MBE |
| 001870 |
| 980 nm QCW high power semiconductor lasers array |
| 001881 |
| Electroluminescent Studies of Emission Characteristics of InGaAsN/GaAs Injection Lasers in a Wide Temperature Range |
| 001887 |
| Double-transconductance-plateau characteristics in InGaAs/GaAs real-space transfer high-electron-mobility transistor |
| 001888 |
| Study of lateral-carrier transport in InAs quantum-dot heterostructures by optical spectroscopy |
| 001894 |
| Deep-ultraviolet emission from an InGaAs semiconductor laser |
| 001897 |
| Observation of coherent interfacial optical phonons in GaInP/GaAs/GaInP single quantum wells |
| 001899 |
| Reduction in Turn-on Voltage in GaInNAs and InGaAs-Based Double-Heterojunction Bipolar Transistors |
| 001904 |
| Interpretation of anomalous temperature dependence of anti-Stokes photoluminescence at GaInP2/GaAs interface |
| 001912 |
| Phonon-Assisted Auger Recombination Processes in InGaAs/GaAs Single-Quantum-Well Lasers |
| 001922 |
| Transport properties of InAs epilayers grown on GaAs substrates by using the prelayer technique |
| 001923 |
| Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy |
| 001953 |
| Steady-state and small signal analysis of terahertz ballistic tunnel transit-time oscillator |
| 001962 |
| Resonant spin Hall conductance in two-dimensional electron systems with a Rashba interaction in a perpendicular magnetic field |
| 001963 |
| Relatively large electric-field induced electron drift velocity observed in an InxGa1-xAs-based p-i-n semiconductor nanostructure |
| 001973 |
| Ordering growth of InAs quantum dots on ultra-thin InGaAs strained layer |
| 001974 |
| Optimization of InGaAsP-InP tensile strained multiple quantum-well structures emitting at 1.34 μm |
| 001977 |
| Optical characteristics of InAs quantum dots capped with short period GaAs/InAs superlattices and InGaAs combination layers |
| 001985 |
| Metamorphosis of InP self-organized islands and the two-dimensional distribution modified by mismatched GaInP buffer layers |
| 001987 |
| MOVPE growth of grade-strained bulk InGaAs/InP for broad-band optoelectronic device applications |
| 001A06 |
| High power polarization-insensitive 1.3 μm InGaAsP-InP quantum-well superluminescent emission diodes grown by MOVPE |
| 001A08 |
| Growth of heavily Zn-doped InGaAs at low temperature by LP-MOCVD |
| 001A23 |
| Effects of indium doping on the properties of AlAs/GaAs quantum wells and inverted AlGaAs/GaAs two-dimensional electron gas |
| 001A24 |
| Effects of V/III ratio on InGaAs and InP grown at low temperature by LP-MOCVD |
| 001A27 |
| Effect of the InAlAs and InGaAs combination strain-reducing layer on 1.3 μm emission self-assembled InAs/GaAs quantum dots |
| 001A31 |
| Design of a resonant-cavity-enhanced GaInAsSb/GaSb photodetector |
| 001A37 |
| Characterization of InAs quantum dots on lattice-matched InAlGaAs/InP superlattice structures |
| 001A49 |
| A high power InGaAs/GaAsP vertical-cavity surface-emitting laser and its temperature characteristics |
| 001A52 |
| Breakdown characteristics of InP/InGaAs composite-collector double heterojunction bipolar transistor |
| 001A55 |
| Electronic properties of GaAs/GayIn1-yNxAs1-y-xSby superlattices |
| 001A56 |
| Comparison of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes with/without GaInAsP and AIGaInAs Graded-Composition Layers |
| 001A58 |
| Enhancement of room-temperature photoluminescence in InAs quantum dots |
| 001A59 |
| Electron-beam-induced current and cathodoluminescence characterization of InGaAs strain-balanced multiquantum well photovoltaic cells |
| 001A62 |
| Investigation of InGaP/GaAs heterojunction bipolar transistor with doping graded base |
| 001A71 |
| Multiple negative differential resistance of InP/InGaAs superlattice-emitter resonant-tunneling bipolar transistor at room temperature |
| 001A76 |
| Absorption of surface acoustic waves by a two-dimensional electron gas in the presence of spin-orbit interaction |
| 001A79 |
| Large electric-field induced electron drift velocity observed in an InxGa1-xAs-based p-i-n semiconductor nanostructure at T=300 K |
| 001A81 |
| Highly strained 1.24-μm InGaAs/GaAs quantum-well lasers |
| 001A84 |
| Transport characteristics of InAs/GaAs quantum-dot infrared photodetectors |
| 001A89 |
| Effect of InGaAs capping layer on the properties of InAs/InGaAs quantum dots and lasers |
| 001A91 |
| Very Low Threshold Current Operation of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes |
| 001A93 |
| Temperature dependence of photoreflectance in InAs/GaAs quantum dots |
| 001A94 |
| Observation of self-organized superlattice in AlGaInAsSb pentanary alloys |
| 001A97 |
| Enhanced spontaneous emission from InAs/GaAs self-organized quantum dots in a GaAs photonic-crystal-based microcavity |
| 001B01 |
| Depletion- and enhancement-mode In0.49Ga0.51P/InGaAs/AlGaAs high-electron-mobility transistors with high-breakdown voltage |
| 001B06 |
| In0.6Ga0.4As/GaAs quantum-dot infrared photodetector with operating temperature up to 260 K |
| 001B09 |
| Tunneling through InAs quantum dots in AlGaAs/GaAs double barrier resonant tunneling diodes with InGaAs quantum well emitters |
| 001B10 |
| Differential surface photovoltage spectroscopy characterization of a 1.3 μm InGaAlAs/InP vertical-cavity surface-emitting laser structure |
| 001B13 |
| Mode splitting in photoluminescence spectra of a quantum-dot-embedded microcavity |
| 001B17 |
| Forbidden transitions and the effective masses of electrons and holes in In1-xGaxAs/InP quantum wells with compressive strain |
| 001B18 |
| Study on dc characteristics of an interesting InP/InGaAs tunneling-emitter bipolar transistor with double heterostructures |
| 001B29 |
| The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing |
| 001B30 |
| The effects of (NH4)2S passivation treatments on the dark current-voltage characteristics of InGaAsSb PIN detectors |
| 001B32 |
| TDHF-SOS treatments on linear and nonlinear optical properties of III-V semiconductor clusters (Ga3As3, Ga3Sb3, In3P3, In3As3, In3Sb3) |
| 001B45 |
| Structure and optical properties of upper In(Ga)As quantum dots on a different seed layer with a thin GaAs spacer layer |
| 001B47 |
| Strain relaxation of InAs epilayer on GaAs under In-rich conditions |
| 001B51 |
| Role of different cap layers tuning the wavelength of self-assembled InAs/GaAs quantum dots |
| 001B68 |
| Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells |
| 001B69 |
| Optical gain of InGaAsSb/AlGaAsSb type-I long wavelength quantum-well lasers |
| 001B82 |
| MOCVD growth of strain-compensated multi-quantum wells light emitting diode |
| 001B90 |
| In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate |
| 001B91 |
| In0.25Ga0.75As films growth on the thin GaAs/AlAs buffer layer on the GaAs(0 0 1) substrate |
| 001B95 |
| High-performance enhancement-mode pseudomorphic InGaP/InGaAs/GaAs HEMT structures by gas source molecular beam epitaxy |
| 001B97 |
| High performances of InP/InGaAs heterojunction bipolar transistors with a δ-doped sheet between two spacer layers |
| 001C03 |
| GalnNAs: Growth and characterization |
| 001C14 |
| Electronic properties of III-V semiconductor heterostructures |
| 001C23 |
| Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots |
| 001C24 |
| Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs (001) substrate |
| 001C29 |
| Deep level transient spectroscopy of vertically stacked InAs/Al0.5Ga0.5As self-assembled quantum dots |
| 001C30 |
| Cyclotron resonance of polarons in ternary mixed crystals |
| 001C33 |
| Correlation of structural and optical investigation of InGaAs/InAlAs quantum cascade laser |
| 001C35 |
| Capacitance-voltage spectroscopy of In0.5Ga0.5As self-assembled quantum dots in double quantum wells under selective photo-excitation |
| 001C42 |
| Analysis of the detectivity for triple-layer heterojunction GaSb/GaInAsSb infrared detectors |
| 001C46 |
| Abnormal temperature dependence of photoluminescence from self-assembled InAs quantum dots covered by an InAlAs/InGaAs combination layer |
| 001C48 |
| A simple model for optimization design of high performance In1-x-yGayAlxAs strained MQW DFB lasers |
| 001C55 |
| Hole emission processes in InAs/GaAs self-assembled quantum dots |
| 001C60 |
| Self-assembled GaAs antiwires in In0.53Ga0.47As matrix on (100) InP substrates |
| 001C62 |
| Metallic wafer bonding for the fabrication of long-wavelength vertical-cavity surface-emitting lasers |
| 001C70 |
| Polaron model in self-assembled InAs/GaAs quantum dots- A perturbative approach |
| 001C73 |
| Wavelength of Emission from InGaAsN Quantum Wells as a Function of Composition of the Quaternary Compound |
| 001C74 |
| Photoreflectance and photoluminescence spectroscopy of the lattice-matched InGaAs/InAlAs single quantum well |
| 001C80 |
| Integral and fractional charge filling in a InAs/GaAs quantum dot p-i-n diode by capacitance-voltage measurement |
| 001C81 |
| Photoluminescence study of hydrogen passivation in InAs1-xNx/InGaAs single-quantum well on InP |
| 001C83 |
| Study of InGaP/GaAs/InGaAs high-barrier gate and heterostructure-channel field-effect transistors |
| 001C86 |
| Extended radio frequency nonlinear model for power prediction of AlGaAs/InGaAs pseudomorphic high electron mobility transistors |
| 001C88 |
| Zero-field spin splitting in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates using Shubnikov-de Haas measurements |
| 001C93 |
| Few-electron filling effect in laterally coupled spherical InAs/GaAs quantum-dot system |
| 001C94 |
| Scanning electron filling modulation reflectance of charged InGaAs self-assembled quantum dot |
| 001C96 |
| Real index-guided InGaAlP red lasers with buried tunnel junctions |
| 001C99 |
| Sulphur passivation of the InGaAsSb/GaSb photodiodes |
| 001D07 |
| InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular-beam epitaxy |
| 001D08 |
| Low-Voltage-Operation High-Power-Density AlGaAs/InGaAs Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistor for Personal Handy-Phone Handset Application |
| 001D13 |
| Tuning of exciton-photon coupling in a planar semiconductor microcavity by applying hydrostatic pressure |
| 001D20 |
| The low-frequency electrical noise as reliability estimation for high power semiconductor lasers |
| 001D33 |
| Study of P-on-N GaINP2/GaAs tandem cells |
| 001D34 |
| Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer |
| 001D36 |
| Strain relaxation of InP film directly grown on GaAs patterned compliant substrate |
| 001D41 |
| Raman study of InAs quantum dots on GaAs/InP grown by low pressure metal-organic chemical vapor deposition |
| 001D44 |
| Photoluminescence of InAs self-organized quantum dots on (001)InP substrate with GaAs interlayer |
| 001D57 |
| Low temperature photoluminescence of InAs self-organized quantum dots on (001) InP substrate with GaAs interlayer |
| 001D61 |
| Influence of strain on annealing effects of In(Ga)As quantum dots |
| 001D62 |
| Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots |
| 001D68 |
| Growth-dependent phonon characteristics in InN thin films |
| 001D72 |
| Formation and charge control of a quantum dot by etched trenches and multiple gates |
| 001D85 |
| Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots |
| 001D87 |
| Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry |
| 001D88 |
| Dependence of optical properties on the structure of multi-layer self-organized InAs quantum dots emitting near 1.3 μm |
| 001E13 |
| Temperature-dependent contactless electroreflectance and photoluminescence study of GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures |
| 001E14 |
| Optical properties of as-grown and annealed InAs(N)/InGaAsP strained multiple quantum wells |
| 001E15 |
| InAs/GaAs single-electron quantum dot qubit |
| 001E17 |
| Comparison of InAs/GaAs Quantum Dot Infrared Photodetector and GaAs/(AlGa)As Superlattice Infrared Photodetector |
| 001E19 |
| Correlation of Photoreflectance Spectra with Performance of GaInP/GaAs Heterojunction Bipolar Transistors |
| 001E20 |
| Comparison of InGaP/InGaAs/GaAs and InGaP/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistors |
| 001E21 |
| Phonon-induced photoconductive response in doped semiconductors |
| 001E23 |
| Polarized-photoreflectance characterization of an InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor structure |
| 001E29 |
| Subband electron properties of highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates |
| 001E37 |
| Longitudinal optic phonon-plasmon coupling in δ-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates |
| 001E38 |
| Thermal redistribution of photocarriers between bimodal quantum dots |
| 001E41 |
| Improved n+-GaAs/p+-In0.49Ga0.51P/n-GaAs camel-like gate structure for high-breakdown, low-leakage, and high-temperature applications |
| 001E42 |
| Random telegraph noise in the photoluminescence of individual GaxIn1-xAs quantum dots in GaAs |
| 001E43 |
| High-Power 1.5 μm InGaAsP/InP Strained Quantum Wells Integrated Superluminescent Light Source with Tilted Structure |
| 001E45 |
| Etching trenches to effectively create electron quantum wires for single-electron-transistor applications |
| 001E53 |
| High-performance InAs/GaAs quantum-dot infrared photodetectors with a single-sided Al0.3Ga0.7As blocking layer |
| 001E55 |
| Near-room-temperature operation of an InAs/GaAs quantum-dot infrared photodetector |
| 001E58 |
| Evolution of island-pit surface morphologies of InAs epilayers grown on GaAs (001) substrates |
| 001E60 |
| Quantum-confined Stark shift in electroreflectance of InAs/InxGa1-xAs self-assembled quantum dots |
| 001E62 |
| Threshold characteristics of 1.55-μm InGaAs/InGaAsP strain-compensated quantum well lasers with zero net strain |
| 001E63 |
| Microtwin formation mechanism in GaP/AlGaInP/GaAs double heterostructure light-emitting diodes |
| 001E65 |
| Temperature invariant lasing and gain spectra in self-assembled GaInAs quantum wire Fabry-Perot lasers |
| 001E70 |
| Characteristics of monolithically integrated two-wavelength laser diodes with aluminum-free active layers |
| 001E78 |
| Growth of InAsN/InGaAs(P) quantum wells on InP by gas source molecular beam epitaxy |
| 001E79 |
| Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure |
| 001E87 |
| Temperature and injection current dependencies of 2 μm InGaAsSb/AlGaAsSb multiple quantum-well ridge-waveguide lasers |
| 001E96 |
| Surface corrugation of In0.15Ga0.85As layers grown on (5 5 3) b-oriented GaAs substrates by molecular beam epitaxy |
| 001F02 |
| Structural anisotropy and optical properties of InxGa1-xAs quantum dots on GaAs(001) |
| 001F07 |
| Self-assembled quantum dots, wires and quantum-dot lasers |
| 001F08 |
| Resonant tunneling through energy states of InAs quantum dots in GaAs metal-semiconductor diode structures |
| 001F09 |
| Quasi RT-CW operation of InGaAs/InGaAsP strained quantum well lasers |
| 001F10 |
| Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy |
| 001F14 |
| Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer |
| 001F20 |
| Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures |
| 001F21 |
| Optical properties of InGaAs quantum dots formed on InAlAs wetting layer |
| 001F22 |
| Multiple quantum wells and laser structures containing InAs quantum dots grown by molecular-beam epitaxy |
| 001F23 |
| Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0≤x≤0.3) layer |
| 001F25 |
| Mid-infrared GaInAsSb photodetector grown by solid source molecular beam epitaxy |
| 001F27 |
| MBE grown 2.0 μm InGaAsSb/AlGaAsSb MQW ridge waveguide laser diodes |
| 001F33 |
| InGaAs/InGaAsP microdisk lasers grown by GSMBE |
| 001F34 |
| InAs self-assembled quantum dots on GaAs/InP by low-pressure metal-organic chemical vapour deposition |
| 001F37 |
| Hysteresis in current transport in a GaAs diode containing self-assembled InAs quantum dots |
| 001F41 |
| High-quality metamorphic HEMT grown on GaAs substrates by MBE |
| 001F42 |
| High-power, low-beam-divergence 980 nm laser arrays with nonabsorbing facets |
| 001F44 |
| Gsmbe growth of InGaP/(In)GaAs modulation-doped heterostructures and their applications to HEMT and HHMT |
| 001F47 |
| Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy |
| 001F48 |
| GSMBE growth of InP-based MSM/HEMT OEIC structures |
| 001F50 |
| Experimental investigation of photoluminescence dynamics of cavity polaritons under nonresonant excitation |
| 001F59 |
| Effect of InxGa1-xAs (0≤x≤0.4) capping layer on self-assembled 1.3 μm wavelength InAs/GaAs quantum islands |
| 001F61 |
| Detection of efficient carrier capture in ultrathin InAs/GaAs layers using a degenerate pump-probe technique |
| 001F62 |
| Design of the active structure of high-performance 1.55-μm In1-x-yGayAlxAs strained MQW lasers |
| 001F64 |
| Damage profiles and damage annealing behavior in Al0.168Ga0.348In0.484P/GaAs implanted with 200 keV Zn+ ions |
| 001F66 |
| Characteristics of strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE |
| 001F68 |
| Band-structure and optical gain for InAsp/In(GaAs)P MQW laser structures |
| 001F69 |
| Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers |
| 001F72 |
| Analysis of semiconductor microlasers with an equilateral triangle resonator by rate equations |
| 001F73 |
| Analysis of room temperature PL spectra of InAs/GaAs/InP and InAs/InP self-assembled QDs : A five-band study |
| 001F85 |
| Influence of dual incorporation of In and N on the luminescence of GaInNAs/GaAs single quantum wells |
| 001F88 |
| Electron distribution and level occupation in an ensemble of InxGa1-xAs/GaAs self-assembled quantum dots |
| 001F89 |
| Theoretical Analysis of Polarization Insensitive InGaAsP Multiple-Quantum-Wells Eletroabsorption Modulators with Negative Chirp |
| 001F92 |
| Carrier distribution and relaxation-induced defects of InAs/GaAs quantum dots |
| 001F94 |
| Investigation of mesa-sidewall effects on direct current and radio frequency characteristics of Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In0.49P pseudomorphic high electron mobility transistors |
| 001F95 |
| Mechanism for photoluminescence in an InyAs1-yN/InxGa1-xAs single quantum well |
| 001F96 |
| High-Temperature Breakdown Characteristics of δ-Doped In0.49Ga0.51P/GaAs/In0.25Ga0.75As/AlGaAs High Electron Mobility Transistor |
| 001F97 |
| X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices |
| 001F99 |
| Detection of terahertz radiation from longitudinal optical phonon-plasmon coupling modes in InSb film using an ultrabroadband photoconductive antenna |
| 002000 |
| Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots |
| 002002 |
| Ellipsometric Study of the Optical Properties of InGaAsN Layers |
| 002006 |
| Room temperature polarized photoreflectance characterization of GaAlAs/InGaAs/GaAs high electron mobility transistor structures including the influence of strain relaxation |
| 002007 |
| Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy |
| 002012 |
| Magneto-Photoluminescence Study of InGaAs/GaAs Quantum Wells and Quantum Dots Grown on (111)B GaAs Substrate |
| 002013 |
| Tuning of conduction intersublevel absorption wavelengths in (In,Ga)As/GaAs quantum-dot nanostructures |
| 002014 |
| Effect of growth temperature on the electric properties of In0.12Ga0.88As/GaAs p-i-n multiple-quantum-well diodes |
| 002025 |
| Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures |
| 002026 |
| Strain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wire |
| 002027 |
| Spin splitting in pseudomorphic InxGa1-xAs/InyAl1-yAs graded heterostructures |
| 002028 |
| Electron transport in the AlGaAs/InGaAs double-heterostructure pseudomorphic high-electron-mobility transistor |
| 002029 |
| Voltage and frequency dependence of differential capacitance in relaxed In0.2Ga0.8As/GaAs schottky diodes |
| 002035 |
| Experimental determination of local Strain effect on InAs/GaAs self-organized quantum dots |
| 002038 |
| Strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures by x-ray diffraction and photoluminescence |
| 002039 |
| Carrier depletion by defects levels in relaxed In0.2Ga0.8As/GaAs quantum-well Schottky diodes |
| 002043 |
| Abnormal temperature dependence of band-gap energies observed in (InAs)/(GaAs) and (InP)/(GaP) superlattices with strong lateral composition modulation |
| 002052 |
| Time-resolved measurement of surface band bending of cleaved GaAs(110) and InP(110) by high resolution XPS |
| 002053 |
| The structural and photoluminescence properties of self-organized quantum dots in InAs/In0.53 Ga0.47 As multilayer on InP substrate |
| 002057 |
| Temperature dependence of the optical properties of InAs/GaAs self-organized quantum dots with bimodal size distribution |
| 002058 |
| Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots |
| 002059 |
| Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers |
| 002065 |
| Strain-compensated quantum cascade lasers operating at room temperature |
| 002067 |
| Self-ordering of quasi-quantum wire in InAlAs/AlGaAs multilayer nanostructure and its optical anisotropy |
| 002068 |
| Self-assembled InAs quantum wires on InP(001) |
| 002070 |
| Room temperature 1.55 μm emission from InAs quantum dots grown on (001)InP substrate by molecular beam epitaxy |
| 002075 |
| Pressure behaviour of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots with multi-modal distribution in size |
| 002081 |
| Photoluminescence in Si and Be directly doped self-organized InAs/GaAs quantum dots |
| 002083 |
| Photoelectrochemical behavior of a novel composite In0.15Ga0.85As/GaAs ]GaAs/Al0.3Ga0.7As multiple quantum well electrode |
| 002094 |
| InGaAsP/GaAs SCH SQW laser arrays grown by LPE |
| 002098 |
| High-performance strain-compensated InGaAs/InAlAs quantum cascade lasers |
| 002100 |
| High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers |
| 002103 |
| Growth and characterization of high-quality GaInAs/AlInAs triple wells |
| 002104 |
| Gas source molecular beam epitaxy of InP-based microstructures : material growth, characterization and device applications |
| 002109 |
| Electronic characteristics of InAs/GaAs self-assembled quantum dots by deep level transient spectroscopy |
| 002115 |
| Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice |
| 002116 |
| Effects of interdiffusion on the luminescence of InAs/GaAs quantum dots covered by InGaAs overgrowth layer |
| 002119 |
| Effect of thin GaAs tensile-strained layer on InAs quantum dots on InP (001) substrate grown by LP-MOVPE |
| 002121 |
| Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes |
| 002122 |
| Effect of rapid thermal annealing on InGaAs/GaAs quantum wells |
| 002125 |
| Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots |
| 002135 |
| Carrier capture into InAs/GaAs quantum dots detected by a simple degenerate pump-probe technique |
| 002137 |
| Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy |
| 002139 |
| An investigation of the optical spectra and EPR parameters of vanadium in III-V semiconductors (GaAs, GaP, InP) |
| 002146 |
| 1.35 μm photoluminescence from In0.5Ga0.5As/GaAs islands grown by molecular beam epitaxy via cycled (InAs)1/(GaAs)1 monolayer deposition |
| 002147 |
| 1.3 μm integrated superluminescent light source |
| 002149 |
| GaInAsSb/InP heterojunction band offset: Measurement by absorption spectroscopy |
| 002154 |
| Barrier height enhancement of Ag/n-GaAs and Ag/n-InP Schottky diodes prepared by P2S5/(NH4)2Sx and HF treatments |
| 002155 |
| High-speed and high-power 1.3 μm InGaAsP/InP selective proton-bombarded buried crescent lasers with optical field attenuation regions |
| 002156 |
| Low-leakage current and high-breakdown voltage GaAs-based heterostructure field-effect transistor with In0.5(Al0.66Ga0.34)0.5P Schottky layer |
| 002157 |
| Positive and negative persistent photoconductivity in a two-side-doped In0.53Ga0.47As/In0.52Al0.48As quantum well |
| 002159 |
| Persistent photoconductivity in InGaP/GaAs heterostructures |
| 002161 |
| Strain effect on the band structure of InAs/GaAs quantum dots |
| 002163 |
| Application of an AlGaAs/GaAs/InGaAs heterostructure emitter for a resonant-tunneling transistor |
| 002164 |
| Observation of carrier depletion and emission effects on capacitance dispersion in relaxed In0.2Ga0.8As/GaAs quantum wells |
| 002169 |
| High breakdown voltage symmetric double δ-doped In0.49Ga0.51P/In0.25Ga0.75As/GaAs high electron mobility transistor |
| 002170 |
| Growth and postgrowth rapid thermal annealing of InAsN/InGaAs single quantum well on InP grown by gas source molecular beam epitaxy |
| 002172 |
| Organometallic vapor phase epitaxy growth and optical characteristics of almost 1.2 μm GaInNAs three-quantum-well laser diodes |
| 002173 |
| Observation of abnormal capacitance-frequency behavior in In0.12Ga0.88As/GaAs p-i-n superlattice grown at low temperature |
| 002175 |
| Determination of surface state density for GaAs and InAlAs by room temperature photoreflectance |
| 002178 |
| Electron-filling modulation reflectance in charged self-assembled InxGa1-xAs quantum dots |
| 002179 |
| Measurement of AlInAsSb/GaInAsSb heterojunction band offset by photoluminescence spectroscopy |
| 002184 |
| Light-induced negative differential resistance in planar InP/InGaAs/InP double-heterojunction p-i-n photodiode |
| 002185 |
| Room-temperature photoreflectance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles |
| 002187 |
| High conduction-band offset of AlInAsSb/InGaAs multiple quantum wells grown by metalorganic vapor phase epitaxy |
| 002192 |
| Application of selective removal of mesa sidewalls for high-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic transistors |
| 002193 |
| Application of a new airbridge-gate structure for high-performance Ga0.51In0.49P/In0.15Ga0.85As/GaAs pseudomorphic field-effect transistors |
| 002194 |
| The optical and electrical studies of hydrogen passivation in GaInP/GaAs heterostructures |
| 002195 |
| Transition of carrier distribution from a strained to relaxed state in InGaAs/GaAs quantum well |
| 002197 |
| Ga0.51In0.49P/InxGa1-xAs/GaAs lattice-matched and strained doped-channel field-effect transistors grown by gas source molecular beam epitaxy |
| 002200 |
| Determination of the valence-band offset for GaInAsSb/InP heterostructure |
| 002205 |
| Structure and photoluminescence of InGaAs self-assembled quantum dots grown on InP(001) |
| 002206 |
| Room-temperature operation of In0.5Ga0.5As as quantum dot lasers grown on misoriented GaAs substrates by molecular beam epitaxy |
| 002208 |
| Photoluminescence study of high-quality InGaAs/GaAs quantum dots on (111)B GaAs substrates |
| 002209 |
| Photoluminescence characteristics of self-assembled In0.5Ga0.5As quantum dots on vicinal GaAs substrates |
| 002210 |
| Excitation density and temperature dependent photoluminescence of InGaAs self-assembled quantum dots |
| 002211 |
| Wavelength tuning in GaAs/AlGaAs quantum wells by InAs submonolayer insertion |
| 002213 |
| Using the tensile stress field to control quantum dot arrangements |
| 002214 |
| Uniformity enhancement of the self-organized InAs quantum dots |
| 002215 |
| Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(3 1 1)B surfaces |
| 002216 |
| Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(3 1 1)B surfaces |
| 002219 |
| Theoretical studies of the g factor of V3+ in III-V semiconductors |
| 002224 |
| The analysis of the performance for P-p-n and N-n-p hetero- and homojunction GaSb/Ga0.8In0.2As0.19Sb0.81 photodetectors |
| 002228 |
| Substrate surface atomic structure influence on the growth of InAlAs quantum dots |
| 002229 |
| Study of overgrowth heterostructure InSb/GaAs by scanning electron acoustic microscopy |
| 002232 |
| Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures |
| 002235 |
| Structural and infrared absorption properties of self-organized InGaAs/GaAs quantum dots multilayers : Special issue papers on quantum dots |
| 002239 |
| Si doping effect on self-organized InAs/GaAs quantum dots |
| 002241 |
| Self-organization of the InGaAs/GaAs quantum dots superlattice |
| 002246 |
| Quantum-dot superluminescent diode : A proposal for an ultra-wide output spectrum |
| 002251 |
| Photovoltaic spectroscopy studies of strained InGaAs/GaAs quantum wells |
| 002253 |
| Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001) : Special issue papers on quantum dots |
| 002268 |
| In composition dependence of lateral ordering in InGaAs quantum dots grown on (311)B GaAs substrates |
| 002271 |
| High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by metal-organic chemical vapor deposition |
| 002272 |
| GSMBE grown infrared quantum cascade laser structures |
| 002274 |
| Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(100) and high index substrates by molecular beam epitaxy |
| 002283 |
| Effect of growth interruption on the optical properties of InAs/GaAs quantum dots |
| 002294 |
| Facet-coating effects on the 1.3-μm strained multiple-quantum-well AlGaInAs/InP laser diodes |
| 002299 |
| BCl3/Ar reactive ion etching for gate recessing of GaInP/InGaAs/GaAs pseudomorphic high electron mobility transistors |
| 002306 |
| InGaAs/GaAs quantum dots on (111)B GaAs substrates |
| 002309 |
| Photoreflectance spectroscopy of strained-layer (111)B InGaAs/GaAs quantum well diodes |
| 002310 |
| Erratum: Strain dependence of hole mass and optical anisotropy in (110) quantum wells [J. Appl. Phys. 82, 5711 (1997)] |
| 002313 |
| Photoluminescence investigation of GaInP/GaAs multiple quantum wells grown on (001) and (311) B GaAs surfaces by gas source molecular beam epitaxy |
| 002314 |
| BCl3/Ar plasma-induced surface damage in GaInP/InGaAs/GaInP quantum-well high-electron-mobility transistors |
| 002315 |
| High resolution x-ray diffraction study of Bragg peak width in strained InGaAs/InAlAs/InP heterostructures |
| 002319 |
| Theoretical analysis of the Auger mechanism in a GaInAsSb infrared photovoltaic detector |
| 002320 |
| Stability improvement of selective oxidation during the fabrication of InGaAs/GaAs vertical cavity surface emitting laser |
| 002321 |
| High-temperature and low-threshold-current operation of 1.5 μm AlGaInAs/InP strain-compensated multiple quantum well laser diodes |
| 002323 |
| Electrical characteristics of heterostructure-emitter bipolar transistors using spacer layers |
| 002324 |
| Suppression of electron and hole leakage in 1.3 μm AlGaInAs/InP quantum well lasers using multiquantum barrier |
| 002330 |
| The directionality of quantum confinement on strain-induced quantum-wire lasers |
| 002334 |
| Self-organized InAs/GaAs quantum dots grown by gas source molecular beam epitaxy |
| 002335 |
| Characterization of piezoelectric (111)B InGaAs/GaAs p-i-n quantum well structures using photoreflectance spectroscopy |
| 002336 |
| Studies of two-subband occupied electron gas in modulation-doped In0.52Al0.48As/In0.53Ga0.47As single quantum well by far-infrared modulated photoluminescence |
| 002338 |
| Conduction-band offset in a pseudomorphic GaAs/In0.2Ga0.8As quantum well determined by capacitance-voltage profiling and deep-level transient spectroscopy techniques |
| 002341 |
| Alignment of misfit dislocations in the In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As/InP heterostructure |
| 002342 |
| Effect of interface roughness and well width on differential reflection dynamics in InGaAs/InP quantum wells |
| 002344 |
| Reactive ion etching of CHF3+BCl3 for ternary InxAl1-xAs and InxGa1-xAs (x=0.18, 0.3, 0.52) compounds using various In contents |
| 002347 |
| Threshold reduction in strained-layer InGaAs/GaAs quantum well lasers by liquid phase epitaxy regrowth |
| 002349 |
| Thermal activation and thermal transfer of localized excitons in InAs self-organized quantum dots |
| 002351 |
| The self-organized In0-25Ga0-75As quantum dots grown by migration enhanced epitaxy |
| 002361 |
| Pressure behaviour of photoluminescence from InAs submonolayer in GaAs matrix |
| 002362 |
| Preparation and optical properties of a SiO2 film containing In0.2Ga0.8As nanocrystals by radio-frequency magnetron co-sputtering |
| 002365 |
| Photoluminescence study of InGaAs/InAlAs single and multiple quantum wells |
| 002366 |
| Photoluminescence study of InxGa1-xAs/InyAl1-yAs one-side-modulation-doped asymmetric step quantum wells |
| 002368 |
| Photoluminescence from InAs quantum dots on GaAs(100) |
| 002374 |
| Optical anisotropy of InAs submonolayer quantum wells in a (311)GaAs matrix |
| 002378 |
| Novel In0.49Ga0.51P./(In)GaAs/GaAs p-type modulation doped heterostructure grown by gas source molecular beam epitaxy |
| 002380 |
| Multi-sheets In0.25Ga0.75As quantum dots grown by migration-enhanced epitaxy |
| 002410 |
| Evidence of multimodal patterns of self-organized quantum dots |
| 002420 |
| Characteristic analysis of absorptive multiple-quantum-well optical waveguides |
| 002424 |
| Annealing behavior of InAs/GaAs quantum dot structures |
| 002425 |
| Analysis of the R0A product and detectivity in a GaInAsSb infrared photovoltaic detector |
| 002426 |
| Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy |
| 002427 |
| Analysis and optimization of 1.55 μm InGaAs/InGaAsP strained multiple quantum well lasers |
| 002429 |
| Alignment of threading dislocations in the In0.3Ga0.7As/GaAs superlattice |
| 002436 |
| The third subband population in modulation-doped InGaAs/InAlAs heterostructures |
| 002437 |
| Strain dependence of hole mass and optical anisotropy in (110) quantum wells |
| 002439 |
| Temperature dependence of photoluminescence spectra in InAs/GaAs quantum dot superlattices with large thicknesses |
| 002441 |
| Molecular beam epitaxy growth of Iny2Al1-y2As/In0.73Ga0.27As/Iny1Al1-y1As/ InP P-HEMTs with enhancement conductivity using an intentional nonlattice-matched buffer layer |
| 002443 |
| Enhanced real-space transfer in δ-doped GaAs/In0.1Ga0.9As/In0.25Ga0.75As two-step channel heterojunctions |
| 002444 |
| Characterization of photoluminescence intensity and efficiency of free excitons in semiconductor quantum well structures |
| 002446 |
| Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix |
| 002448 |
| Negative differential resistance in InGaAs/AlAsSb/InGaAs single-barrier heterostructure |
| 002449 |
| Bistable GaAs-InGaP triangular-barrier optoelectronic switch |
| 002451 |
| Normal incident long-wavelength quantum well infrared photodetectors using electron intersubband transitions |
| 002452 |
| Long wavelength (1.3 μm) vertical-cavity surface-emitting lasers with a wafer-bonded mirror and an oxygen-implanted confinement region |
| 002454 |
| Intraband optical absorption in semiconductor coupled quantum dots |
| 002456 |
| The calculation and the photoluminescence characterization of energy levels in a strained GaAs/In0.2Ga0.8As/GaAs quantum well heterostructure for the application of light-emitting real-space transfer devices |
| 002458 |
| Characteristics of InxGa1-xAs/GaAs pseudomorphic modulation doped field effect transistor |
| 002460 |
| The enhancement of InGaAs Schottky barrier height by the addition of Pr2O3 and In2O3 in the liquid phase epitaxy |
| 002461 |
| Self-formed InGaAs/GaAs quantum dot superlattice and direct observation on strain distribution in the capped superlattice |
| 002462 |
| Gas source molecular beam epitaxy growth of high quality InGaAsP for 0.98 μm Al-free InGaAs/InGaAsP/InGaP laser diodes |
| 002463 |
| Optical characterization of real-space hot-electron transfer in a strained GaAs/In0.2Ga0.8As/GaAs quantum well heterostructure |
| 002464 |
| Comment on High-efficiency energy up-conversion at GaAs-GaInP2 interfaces [Appl. Phys. Lett. 67, 2813 (1995)] |
| 002467 |
| Controllable drain cut-in voltage with strong negative differential resistance in GaAs/InGaAs real-space transfer heterostructure |
| 002468 |
| Multiple subband population in delta-doped AlAsSb/InGaAs heterostructures |
| 002472 |
| Temperature dependence of quantized states in an In0.86Ga0.14As0.3P0.7/InP quantum well heterostructure |
| 002475 |
| Wafer direct bonding of compound semiconductors and silicon at room temperature by the surface activated bonding method |
| 002480 |
| The electronic structure of AlyGaxIn1-x-yAs alloys and related heterojunctions |
| 002486 |
| Study on valence offsets at InxGa1-xAs/InxAl1-xAs heterojunction |
| 002490 |
| Study of GSMBE growth and characteristics of high-quality strained In0.63Ga0.37As/InP quantum wells |
| 002495 |
| Scanning tunneling microscopy of III-V compound semiconductor (001) surfaces |
| 002501 |
| MBE growth and characterization of high-quality GaInAsSb/AlGaAsSb strained multiple quantum well structures |
| 002506 |
| Investigation of dislocations and traps in MBE grown p-InGaAs/GaAs heterostructures |
| 002510 |
| Growth of high-quality relaxed In0.3Ga0.7As/GaAs superlattices |
| 002513 |
| GSMBE growth and characterization of InxGa1-xAs/InP strained-layer MQWs in a P-i-N Configuration |
| 002531 |
| Asymmetric stark shifts of exciton in InAs/GaAs pyramidal quantum dots |
| 002533 |
| Analysis of coupling effect on valence band structures of strained multiple quantum wells |
| 002538 |
| 1.55 μm laser diodes with leaky waveguide structure |
| 002558 |
| Photoinduced electron coupling in δ-doped GaAs/In0.18Ga0.82As quantum wells |
| 002574 |
| Observation of double cyclotron resonance in modulation-δ-doped In0.52Al0.48As/In0.53Ga0.47As heterostructure by optical detection |
| 002576 |
| A proposal for determination of band offset at a semiconductor heterojunction |
| 002579 |
| Compositional disordering of InGaAs/GaAs heterostructures by low-temperature-grown GaAs layers |
| 002581 |
| Photoluminescence studies of InAs/InGaAs/AlAs strained single quantum well structures |
| 002587 |
| The effect of nonparabolicity on electron transport in semiconductor thin films |
| 002589 |
| Study of GaInAsSb epilayer by scanning electron acoustic microscopy |
| 002593 |
| Scanning electron acoustic microscopy of semiconductor materials |
| 002599 |
| Parametric study on lattice-matched and pseudomorphic InGaAs/InAlAs/InP modulation-doped heterostructures grown by GSMBE |
| 002602 |
| Optical properties of quaternary GaInAsSb/AlGaAsSb strained quantum wells |
| 002607 |
| Monte Carlo simulation of exciton states in spatially separated electron-hole system |
| 002611 |
| Investigation of strain-compensated InGaAs(P)/InGaAs(P)/InP multiple quantum well structures grown by LP-MOVPE |
| 002617 |
| GSMBE growth and PL investigation of lattice-matched InGaAs/InP quantum wells |
| 002618 |
| Exciton line broadening and intersubband absorption in quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells |
| 002622 |
| Characterization of deep centers in AlGaAs/InGaAs/GaAs pseudomorphic HEMT structures grown the molecular beam epitaxy and hydrogen treatment |
| 002626 |
| A new structure of in-based ohmic contacts to n-type GaAs |
| 002628 |
| Raman scattering from longitudinal-optical phonon-plasmon-coupled mode in carbon-doped p-type InGaAs |
| 002629 |
| Optical investigation of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells |
| 002631 |
| Persistent-photoconductivity effect in δ-doped Al0.48In0.52As/Ga0.47In0.53As heterostructures |
| 002632 |
| Photoluminescence of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells |
| 002633 |
| Critical layer thickness in metal organic chemical vapor deposition grown InGaAs/GaAs strained quantum wells |
| 002634 |
| Strong blueshift of the excitonic transition in the InGaAs/InP/InAsP antisymmetric coupled quantum wells |
| 002636 |
| Nonlinear polarization switching in a semiconductor single quantum well optical amplifier |
| 002637 |
| Photoluminescence studies of single submonolayer InAs structures grown on GaAs (001) matrix |
| 002638 |
| Photoreflectance temperature dependence of graded InAlAs/InGaAs heterojunction bipolar transistor layers |
| 002640 |
| Dependence of electron effective mass on alloy composition of InAlGaAs lattice matched to InP studied by optically detected cyclotron resonance |
| 002642 |
| Strong Stark effect of the intersubband transitions in the three coupled quantum wells: Application to voltage-tunable midinfrared photodetectors |
| 002644 |
| Observation of spin-splitting crossing between subbands in the optically detected cyclotron-resonance spectra of In0.53Ga0.47As/In0.52Al0.48As heterojunctions |
| 002646 |
| Breaking up of misfit dislocations in GaAs/In0.3Ga0.7As/GaAs heterostructure |
| 002647 |
| A high-current-gain, high-speed P-n-p AlGaAs/InGaAs/GaAs collector-up heterojunction bipolar transistor |
| 002648 |
| Observation of quantum confined Stark effect in InxGa1-xAs/GaAs single-quantum well by photoreflectance spectroscopy |
| 002649 |
| Observation of the anomalous current-voltage characteristics of GaAs/n+-InGaAs/GaAs doped-channel structure |
| 002651 |
| Observation of excitonic polariton and broadening of room-temperature exciton in strained InGaAs/GaAs quantum wells |
| 002652 |
| Study of the optical properties of In0.52(AlxGa1-x)0.48As by variable angle spectroscopic ellipsometry |
| 002653 |
| Interfacial reactions of Ni-In and Ni/In/Ni ohmic contacts to n-GaAs |
| 002658 |
| The wavelength shift in GaInAsSb photodiode structures |
| 002659 |
| Study on symmetry forbidden transitions in an InxGa1-xAs/GaAs single quantum well by temperature dependence |
| 002660 |
| Photoreflectance study on the two-dimensional electron gas of InAlAs/InGaAs heterojunction bipolar transistor grown by molecular beam epitaxy |
| 002661 |
| Cyclotron-resonance studies in relaxed InxGa1-xAs (0≤x≤1) epilayers |
| 002663 |
| Characteristics of a δ -doped GaAs/InGaAs p-channel heterostructure field-effect transistor |
| 002664 |
| Photoreflectance characterization of graded InAlAs/InGaAs heterojunction bipolar transistor layers |
| 002666 |
| Study of InAlAs/InGaAs heterojunction bipolar transistor layers by optically detected cyclotron resonance |
| 002667 |
| Molecular beam epitaxy regrowth using a thin In layer for surface passivation |
| 002668 |
| Spectroscopic studies of the effects of two-dimensional electron gas on interband transitions |
| 002670 |
| Luminescence of low-temperature GaAs in a GaAs/In0.2Ga0.8As multiple quantum well structure |
| 002671 |
| Photomodulated reflectance spectra of In0.2Ga0.8As/GaAs single quantum wells |
| 002672 |
| Very large Stark shift in three-coupled-quantum wells and their application to tunable far-infrared photodetectors |
| 002673 |
| Performance enhancement in a metal-insulator-semiconductor-like pseudomorphic transistor by utilizing an n--GaAs/n+-In0.2Ga0.8As two-layer structure |
| 002674 |
| Characteristics of a GaAs-InGaAs quantum-well resonant-tunneling switch |
| 002679 |
| Characteristics of δ -doped InGaAs/GaAs pseudomorphic double-quantum-well high electron mobility transistors |
| 002680 |
| Investigation of the epitaxial growth of InxGa1-xAs on GaAs(001) and extension of two-dimensional-three-dimensional growth mode transition |
| 002682 |
| Schottky barrier heights of InxAl1-xAs (0≤x≤0.35) epilayers on GaAs |
| 002684 |
| Very strong negative differential resistance real-space transfer transistor using a multiple δ-doping GaAs/InGaAs pseudomorphic heterostructure |
| 002685 |
| Second subband population in δ-doped Al0.48In0.52As/Ga0.47In0.53As heterostructures |
| 002686 |
| Photoluminescence study of highly mismatched In0.53Ga0.47As epilayers grown on InP-coated GaAs substrates |
| 002689 |
| Liquid-phase epitaxial growth and characterization of InGaAsP layers grown on GaAsP substrates for application to orange light-emitting diodes |
| 002690 |
| Electric-field dependence of optical absorption properties in coupled quantum wells and their application to 1.3 μm optical modulator |
| 002692 |
| Valence-band offset at InxGa1-xAs/GaAs heterojunctions under different strain conditions |
| 002696 |
| Subpicosecond dynamics spectra in InGaAs/GaAs strained-layer and strained quantum well |
| 002701 |
| Room-temperature excitons in strained InGaAs/GaAs quantum wells |
| 002703 |
| Photomodulated transmission spectroscopy of InxGa1-xAs/GaAs MQWs under hydrostatic pressure |
| 002704 |
| Photoluminescence studies of modulation-doped In0.60Ga0.40As/In0.52Al0.48As strained multiple quantum wells |
| 002714 |
| Hot electron high-frequency mobility in wide- and narrow-gap semiconductors |
| 002716 |
| Growth of GaInAsSb alloys by metalorganic chemical vapor deposition |
| 002717 |
| Growth of GaAs-InP heteromaterials and corresponding strain determination |
| 002718 |
| Growth of GaxIn1-xAs1-ySby alloys by metalorganic chemical vapor deposition |
| 002720 |
| Femtosecond modulated reflectance investigation of In0.5Ga0.5P and In0.5Ga0.5P0.99As0.01 lattice-matched to GaAs (100) substrate |
| 002721 |
| Exciton line broadening in strained InGaAs/GaAs single quantum wells |
| 002725 |
| Decrease of dislocations in GaAs by isoelectronic doping of liquid phase epitaxial layers |
| 002726 |
| Critical layer thickness in MOCVD grown InGaAs-GaAs strained quantum wells |
| 002728 |
| Characterization of InxGa1-xAs/InP epilayers by X-ray double crystal rocking curve peak profile analysis |
| 002731 |
| An InGaAs-GaAs strained layer single quantum-well ring laser with a reactive ion-etched tetragonal cavity |
| 002733 |
| A resonant Raman study on phonons in GaInAs/AlInAs multiple quantum wells |
| 002738 |
| Absorption spectroscopy studies of strained InGaAs/GaAs single-quantum wells |
| 002743 |
| Hot-electron cooling and hot-phonon generation with collision broadening |
| 002746 |
| Flat band current-voltage-temperature method for band-discontinuity determination and its application to strained InxGa1-xAs/In0.52Al0.48As heterostructures |
| 002747 |
| Enhancement of the Stark effect in AlInAs/GaInAs coupled quantum wells and their application to tunable midinfrared photodetectors |
| 002750 |
| Molecular-beam epitaxial growth of InxAl1-xAs on GaAs |
| 002751 |
| Enhancement of electron transfer and negative differential resistance in GaAs-based real-space transfer devices by using strained InGaAs channel layers |
| 002752 |
| Influence of cap layer thickness on optical quality in In0.2Ga0.8As/GaAs single quantum wells |
| 002753 |
| X-ray analysis of strain relaxation in strained-layer superlattices |
| 002754 |
| Triply resonant enhancement of third-order nonlinear optical susceptibility in compositionally asymmetric coupled quantum wells |
| 002755 |
| Raman-line-shape study of InxGa1-xAs on InP and GaAs substrates |
| 002757 |
| Calculation of bond lengths in an In1-xGaxAs1-yPy quaternary-alloy semiconductor |
| 002761 |
| The geometry of misfit dislocations with respect to the strained interface in [001] In0.1Ga0.9As/GaAs single heterostructures |
| 002762 |
| Mobility enhancement in double δ-doped GaAs/InxGa1-xAs/GaAs pseudomorphic structures by grading the heterointerfaces |
| 002763 |
| GaAs-InGaAs quantum-well resonant-tunneling switching device grown by molecular beam epitaxy |
| 002764 |
| Two-dimensional arsenic precipitation by In delta doping during low temperature molecular beam epitaxy growth of GaAs or AlGaAs |
| 002766 |
| Valence-band offsets and band tailoring in compound strained-layer superlattices |
| 002767 |
| Photoreflectance characterization of an InAlAs/InGaAs heterostructure bipolar transistor |
| 002769 |
| Strong accumulation of As precipitates in low temperature InGaAs quantum wells grown by molecular beam epitaxy |
| 002770 |
| The effect of the InAs layer thickness on the peak current density and subband properties of the GaSb/InAs/GaSb/AlSb/InAs structures |
| 002771 |
| Dislocation generation mechanisms of InxGa1-xAs (0≤x≤1) epilayers grown on (100) InP substrates by molecular beam epitaxy |
| 002772 |
| Secondary-ion mass spectrometry analysis in pseudomorphic GaAs/InGaAs/GaAs heterostructures utilizing a δ-doping superlattice |
| 002773 |
| Influences of δ -doping time and spacer thickness on the mobility and two-dimensional electron gas concentration in δ -doped GaAs/InGaAs/GaAs pseudomorphic heterostructures |
| 002774 |
| Deposition of gallium oxide and indium oxide on GaAs for in situ process use by alternating supply of TEGa, TMIn, and H2O2 as surge pulses |
| 002775 |
| Comparing reactive ion etching of III-V compounds in Cl2/BCl3/Ar and CCl2F2/BCl3/Ar discharges |
| 002781 |
| The Hall factor of hot-electron transport in non-parabolic Kane bands |
| 002789 |
| Optical studies of strained InGaAs/GaAs single quantum wells |
| 002791 |
| Observation of laser oscillation without population inversion in InGaAsP microdisk lasers |
| 002794 |
| Low temperature electrical transportation behavior of In0.5Ga0.5P |
| 002808 |
| X-ray characterization of strain relaxation in InGaAs/GaAs strained-layer superlattices |
| 002810 |
| Wannier-Stark localization in InGaAs/GaAs superlattices and its application to electro-optical devices |
| 002813 |
| Transmission coefficient in symmetrical double-well potential structures |
| 002820 |
| Structure of InxGa1-xAs/GaAs strained-layer superlattices |
| 002822 |
| Quantitative analysis of InxGa1-xAs by Auger electron spectroscopy |
| 002837 |
| Determination of wavelength dependence of the reflectivity at AR coated diode facets |
| 002860 |
| Oxygen in InxGa1-xAsyP1-y Grown on GaAs |
