| Ident. | Authors (with country if any) | Title |
|---|
| 000079 |
| The effect of thermal annealing of Mo film on the CuInSe2 layer texture and device performance |
| 000081 |
| The effect of oxygen ion beam bombardment on the properties of tin indium oxide/polyethylene terephthalate complex |
| 000135 |
| Preparation and properties of KCl-doped Cu2O thin film by electrodeposition |
| 000185 |
| Low-temperature growth of InxGa1-xN films by radio-frequency magnetron sputtering |
| 000193 |
| Investigation of copper indium gallium selenide material growth by selenization of metallic precursors |
| 000194 |
| Investigation of chalcopyrite film growth: an evolution of thin film morphology and structure during selenization |
| 000209 |
| Influence of GaAs(0 01 ) pregrowth surface morphology and reconstruction on the growth of InGaAs layers |
| 000267 |
| Electrochemical growth and characterization of CdTe nanorod arrays |
| 000381 |
| Tailoring the in-plane epitaxial relationship of InN films on (1 11)SrTiO3 substrates by substrate pretreatment |
| 000454 |
| Ordered versus random nucleation of InN islands grown by molecular beam epitaxy |
| 000506 |
| Highly flexible transparent and conductive ZnS/Ag/ZnS multilayer films prepared by ion beam assisted deposition |
| 000552 |
| Electrodeposition of Sb2Se3 on indium-doped tin oxides substrate: Nucleation and growth |
| 000605 |
| Chemical vapor deposition growth of InN nanostructures: Morphology regulation and field emission properties |
| 000695 |
| Synthesis and photoelectric characterization of semiconductor CdSe microrod array by a simple electrochemical synthesis method |
| 000757 |
| Orthogonal optimization for room temperature magnetron sputtering of ZnO:Al films for all-solid electrochromic devices |
| 000771 |
| One-step synthesis and stabilization of gold nanoparticles and multilayer film assembly |
| 000805 |
| Influence of thermal annealing duration of buffer layer on the crystalline quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD |
| 000860 |
| Fabrication and lithium electrochemistry of InSe thin film |
| 000871 |
| Enhanced electrical stability of flexible indium tin oxide films prepared on stripe Si02 buffer layer-coated polymer substrates by magnetron sputtering |
| 000878 |
| Electrodeposition of zinc oxide/tetrasulfonated copper phthalocyanine hybrid thin film for dye-sensitized solar cell application |
| 000881 |
| Electrochromic properties of WO3 thin film onto gold nanoparticles modified indium tin oxide electrodes |
| 000890 |
| Electrical properties of vacuum-annealed titanium-doped indium oxide films |
| 000901 |
| Effects of Cu/In ratio of electrodeposited precursor on post-sulfurization process in fabricating quaternary CuIn(S,Se)2 thin films |
| 000903 |
| Effect of the heat treatment on the infrared emissivity of indium tin oxide (ITO) films |
| 000915 |
| Domain structure and optical property of epitaxial indium oxide film deposited on MgO(100) substrate |
| 000A81 |
| Optical and electrical properties of In-doped CdO thin films fabricated by pulse laser deposition |
| 000B96 |
| Effect of triethanolamine and sodium dodecyl sulfate on the formation of CuInSe2 thin films by electrodeposition |
| 000C20 |
| Characterization of single-crystalline In2O3 films deposited on Y-stabilized ZrO2 (100) substrates by MOCVD |
| 000C37 |
| A study of indium incorporation in In-rich InGaN grown by MOVPE |
| 000C71 |
| Transparent conducting Sn-doped Ga1.4In0.6O3 films prepared on α-Al2O3 (0 0 0 1) by MOCVD |
| 000D30 |
| Structural and optical properties of Ga2(1-x)In2xO3 films prepared on α-Al2O3 (0 0 01 ) bv MOCVD |
| 000D53 |
| Quantum rings formed in InAs QDs annealing process |
| 000D59 |
| Preparation of Bi2S3 thin films with a nanoleaf structure by electrodeposition method |
| 000D72 |
| Photoluminescence investigation of ZnO:P nanoneedle arrays on InP substrate by pulsed laser deposition |
| 000E50 |
| Growth and field emission properties of globe-like diamond microcrystalline-aggregate |
| 000E53 |
| Growth and characterization of CuInSe2 thin films prepared by successive ionic layer adsorption and reaction method with different deposition temperatures |
| 000E57 |
| Formation of p-type ZnMgO thin films by In-N codoping method |
| 000F17 |
| Direct current magnetron sputtering deposition of InN thin films |
| 000F95 |
| Thickness dependence of structural, electrical and optical properties of indium tin oxide (ITO) films deposited on PET substrates |
| 001029 |
| Structure and electrical properties of CdIn2O4 thin films prepared by DC reactive magnetron sputtering |
| 001034 |
| Strain relaxation and surface morphology of high indium content InAlAs metamorphic buffers with reverse step |
| 001255 |
| Two-step growth of ZnO films with high conductivity and high roughness |
| 001546 |
| Structural properties of CuInSe2 films prepared by selenization of metallic precursors on MoNx film substrates |
| 001658 |
| Effect of GaAs(1 0 0) 2° surface misorientation on the formation and optical properties of MOCVD grown InAs quantum dots |
| 001790 |
| Influence of the low temperature buffer layer on InP epitaxial growth on GaAs substrates |
| 001795 |
| Indium tin oxide thin films by bias magnetron rf sputtering for heterojunction solar cells application |
| 001A21 |
| Electrochemistry and electrogenerated chemiluminescence of SiO2 nanoparticles/ tris(2,2'-bipyridyl)ruthenium(II) multilayer films on indium tin oxide electrodes |
| 002491 |
| Study of Cr overlayer on InP(100) by synchrotron radiation photoemission |
| 002769 |
| Strong accumulation of As precipitates in low temperature InGaAs quantum wells grown by molecular beam epitaxy |
| 002771 |
| Dislocation generation mechanisms of InxGa1-xAs (0≤x≤1) epilayers grown on (100) InP substrates by molecular beam epitaxy |
