| Ident. | Authors (with country if any) | Title |
|---|
| 000122 |
| Rational Design of Sub-Parts per Million Specific Gas Sensors Array Based on Metal Nanoparticles Decorated Nanowire Enhancement-Mode Transistors |
| 001513 |
| Theoretical study of improved two-dimensional electron gas density in AlGaN/GaN/AlGaN double heterostructure |
| 001911 |
| Study of InGaP/InGaAs double delta-doped channel heterostructure field-effect transistors |
| 001D03 |
| ZnMgSSe Metal-Semiconductor-Metal Visible-Blind Photodetectors with Transparent Indium-Tin-Oxide Contact Electrodes |
| 001E74 |
| Temperature Dependence of Gate Current and Breakdown Behaviors in an n+-GaAs/p+-InGaP/n--GaAs High-Barrier Gate Field-Effect Transistor |
| 001E75 |
| An Improved In0.34Al0.66As0.85Sb0.15/InP Heterostructure Utilizing Coupled δ-Doping InP Channel |
| 002017 |
| In0.34Al0.66As0.85Sb0.15/δ(n+)-InP heterostructure field-effect transistors |
| 002663 |
| Characteristics of a δ -doped GaAs/InGaAs p-channel heterostructure field-effect transistor |
| 002667 |
| Molecular beam epitaxy regrowth using a thin In layer for surface passivation |
| 002751 |
| Enhancement of electron transfer and negative differential resistance in GaAs-based real-space transfer devices by using strained InGaAs channel layers |
