| Ident. | Authors (with country if any) | Title |
|---|
| 000052 |
| Using Water-Soluble Nickel Acetate as Hole Collection Layer for Stable Polymer Solar Cells |
| 000093 |
| Synthesis and Properties of High-Performance Functional Polyimides Containing Rigid Nonplanar Conjugated Tetraphenylethylene Moieties |
| 000173 |
| Multicolor Electrochromism of Low-Bandgap Copolymers Based on Pyrrole and 3,4-Ethylenedioxythiophene: Fine-Tuning Colors Through Feed Ratio |
| 000199 |
| Interfacial self-assembly of Zn(Fe)-bisterpyridine coordination polymers, their fluorescent and electrochemical properties in Langmuir-Blodgett films |
| 000265 |
| Electrosynthesis and Characterizations of a Multielectrochromic Copolymer Based on Pyrrole and 3,4-Ethylenedioxythiophene |
| 000275 |
| Effects of electrochemically active carbon and indium (III) oxide in negative plates on cycle performance of valve-regulated lead-acid batteries during high-rate partial-state-of-charge operation |
| 000306 |
| Construction of Functional Macromolecules with Well-Defined Structures by Indium-Catalyzed Three-Component Polycoupling of Alkynes, Aldehydes, and Amines |
| 000328 |
| Air-stable inverted ZnO nanorod arrays/polymer hybrid solar cell |
| 000346 |
| 5,6-Bis(tetradecyloxy)-2,1,3-benzoselenadiazole-Based Polymers for Photovoltaic Applications |
| 000371 |
| The experimental investigation on dark current for InGaAs-InP avalanche photodiodes |
| 000392 |
| Synthesis and memory performance of a conjugated polymer with an integrated fluorene, carbazole and oxadiazole backbone |
| 000394 |
| Synthesis and Characterization of Electrophosphorescent Jacketed Conjugated Polymers |
| 000432 |
| Push-Pull Archetype of Reduced Graphene Oxide Functionalized with Polyfluorene for Nonvolatile Rewritable Memory |
| 000526 |
| Fluorene- and Benzimidazole-Based Blue Light-Emitting Copolymers: Synthesis, Photophysical Properties, and PLED Applications |
| 000534 |
| Fabrication of Poly(3,4-ethylenedioxythiophene)-Polysaccharide Composites |
| 000540 |
| Experimental Studies on Blinking Behavior of Single InP/ZnS Quantum Dots: Effects of Synthetic Conditions and UV Irradiation |
| 000550 |
| Electrosynthesises and characterizations of copolymers based on pyrrole and 3,4-ethylenedioxythiophene in aqueous micellar solution |
| 000571 |
| Effects of Thiophene Units on Substituted Benzothiadiazole and Benzodithiophene Copolymers for Photovoltaic Applications |
| 000582 |
| Effect of CsF buffer layer on charge-carrier mobility in organic light-emitting diodes based on a polyfluorene copolymers by admittance spectroscopy |
| 000601 |
| Conductivity switching and memory effect in polymer brushes with carbazole pendant moieties |
| 000618 |
| Application of Single-Crystalline PMN-PT and PIN-PMN-PT in High-Performance Pyroelectric Detectors |
| 000651 |
| Visual Study of Flow Pattern Evolution of Flow Boiling in a Microtube |
| 000720 |
| Self-assembled InAs/GaAs quantum dot molecules with InxGa1- xAs strain-reducing layer |
| 000723 |
| Rewritable and Non-Volatile Memory Effects Based on Polyimides Containing Pendant Carbazole and Triphenylamine Groups |
| 000794 |
| Layer-by-layer assembly of graphene/polyaniline multilayer films and their application for electrochromic devices |
| 000820 |
| In Situ Oxidative Polymerization of Polyaniline Counter Electrode on ITO Conductive Glass Substrate |
| 000830 |
| High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD |
| 000831 |
| High-power 1.25 μm InAs QD VECSEL based on resonant periodic gain structure |
| 000927 |
| Cross-linking conducting polythiophene with yellow-green light-emitting properties and good thermal stability via free radical polymerization and electropolymerization |
| 000953 |
| An Efficient Electroluminescence Copolymer Based on Vinyl-Linked Donor-Acceptor System |
| 000990 |
| Theoretical Study on Hetero-Diels-Alder Reaction of Butadiene with Benzaldehyde Catalyzed by Chiral InIII Complexes |
| 000A19 |
| Synthesis and electrochromic properties of oligothiophene derivatives |
| 000A21 |
| Synthesis and Properties of Partially Conjugated Hyperbranched Light-Emitting Polymers |
| 000A22 |
| Synthesis and Characterization of Green to Orange Electroluminescent Copolymers Derived from Fluorene and 2,3-Dimethylnaphthalopyrazine |
| 000A26 |
| Surface functionalization of polymer nanofibers by ITO sputter coating |
| 000A27 |
| Surface and Interface Investigation of Indium-Tin-Oxide (ITO) Coated Nonwoven Fabrics |
| 000A31 |
| Study of the controllable reactivity of aluminum alloys and their promising application for hydrogen generation |
| 000A41 |
| Solution-processed white organic light-emitting diode based on a single-emitting small molecule |
| 000A80 |
| Optical bistability in InP/InAlGaAs multi-quantum-well semiconductor ring lasers |
| 000A85 |
| Novel chitosan/gold-MPA nanocomposite for sequence-specific oligonucleotide detection |
| 000B13 |
| Investigation of the Electropolymerization of o-Toluidine and p-Phenylenediamine and Their Electrocopolymerization by In Situ Ultraviolet-Visible Spectroelectrochemistry |
| 000B50 |
| Feasibility study of hydrogen production for micro fuel cell from activated Al-In mixture in water |
| 000B99 |
| Effect of methanol treatment on performance of phosphorescent dye doped polymer light-emitting diodes |
| 000C10 |
| Development of indium bumping technology through AZ9260 resist electroplating |
| 000C18 |
| Conducting behaviors of PPy/ITO composites synthesized by polymerization |
| 000C32 |
| An InP based wide gain spectrum asymmetric quantum wells for large scale optoelectronic monolithic integration |
| 000C47 |
| A New Dithienylbenzotriazole-Based Poly(2,7-carbazole) for Efficient Photovoltaics |
| 000C48 |
| A Fluorene-Oxadiazole Copolymer for White Light-Emitting Electrochemical Cells |
| 000C64 |
| Vacuum-Deposited Poly(o-phenylenediamine)/WO3•nH2O Nanocomposite Thin Film for NO2 Gas Sensor |
| 000D12 |
| Synthesis and White Electroluminescent Properties of Multicomponent Copolymers Containing Polyfluorene, Oligo(phenylenevinylene), and Porphyrin Derivatives |
| 000D35 |
| Stability of TCO Window Layers for Thin-Film CIGS Solar Cells upon Damp Heat Exposures - Part II |
| 000D50 |
| Reactive compatibilization of LLDPE/PS blends with a new type of Lewis acid as catalyst |
| 000D94 |
| Nonlinearities of PIN Photodiodes and PSPICE simulation |
| 000E32 |
| InP nanowires with various morphologies formed by Au-assisted metal-organic chemical vapor deposition |
| 000E42 |
| High-Detectivity Polymer Photodetectors with Spectral Response from 300 nm to 1450 nm |
| 000E43 |
| High efficiency passively Q-switched mode-locking Nd:GdV04 laser with LT-In0.25Ga0.75As saturable absorber |
| 000F08 |
| Effect of UV-ozone treatment on ITO and post-annealing on the performance of organic solar cells |
| 000F18 |
| Diode-pumped passively mode-locked Nd:LuVO4 laser with LT-In0.25Ga0.75As saturable absorber |
| 000F25 |
| Design and Fabrication of PIN-PMN-PT Single-Crystal High-Frequency Ultrasound Transducers |
| 000F65 |
| A ridge width varied two-section index-coupled DFB self-pulsation laser with a wide continuously tunable frequency range |
| 001006 |
| The characterization and properties of InN grown by MOCVD |
| 001008 |
| Temperature dependence of the energy bandgap of HgInTe |
| 001010 |
| Temperature dependence of PL spectrum in researching InGaAs/GaAs single quantum well |
| 001014 |
| Synthesis of MDMO-PPV capped PbS quantum dots and their application to solar cells |
| 001021 |
| Surface and subsurface damages in nanoindentation tests of compound semiconductor InP |
| 001027 |
| Study on Applications of Terahertz technology |
| 001038 |
| Single Dipole Mode Photonic Crystal Laser on InGaAsP/InP QW Waveguide Slab |
| 001043 |
| Self-pulsation in a two-section DFB laser with a varied ridge width |
| 001054 |
| Preparation of light color antistatic and anticorrosive waterborne epoxy coating for oil tanks |
| 001070 |
| Performance Analysis of 256 Element Linear 2.4μm InGaAs Photovoltaic Detector Arrays |
| 001083 |
| Nitrogen Incorporation Characteristics of 4H-SiC Epitaxial Layer |
| 001086 |
| Near-infrared photodetectors based on mercury indium telluride single crystals |
| 001112 |
| Influence of mechanical agitation on ZnSe electrodeposition in H2SeO3-ZnSO4 aqueous solution |
| 001133 |
| High Uniformity InGaAs Linear Mesa-type SWIR Focal Plane Arrays |
| 001140 |
| Formation and Properties of the Novel GeSe2-In2Se3-Csl Chalcohalide Glasses |
| 001165 |
| Electroluminescence from ZnO nanowires with a p-ZnO film/n-ZnO nanowire homojunction |
| 001166 |
| Electroluminescence and Photovoltaic Properties of Poly(p-phenylene vinylene) Derivatives with Dendritic Pendants |
| 001190 |
| Dispersion of the nano-lnP Doped Fiber |
| 001213 |
| Characterization of multilayered HgCdTe for MW/LW two-color application |
| 001225 |
| Analysis on the frequency band of ultra-wide-band electromagnetic radiation from photoconductive semiconductor switches |
| 001246 |
| 256×1 Element Linear InGaAs Short Wavelength near-Infrared Detector Arrays |
| 001276 |
| Template synthesis of tin-doped indium oxide (ITO)/polymer and the corresponding carbon composite hollow colloids |
| 001283 |
| Synthesis and characterization of white-light-emitting polyfluorenes containing orange phosphorescent moieties in the side chain |
| 001293 |
| Study on ITO/Ag/ITO multilayer film as the electrode of organic light-emitting diodes |
| 001317 |
| Pure red emission of dye-doped organic molecules from microcavity organic light emitting diode |
| 001324 |
| Preparation and properties of UV-curable polymer/nanosized indium-doped tin oxide (ITO) nanocomposite coatings |
| 001328 |
| Photon emitting, absorption and reconstruction of photons |
| 001341 |
| New synthesis of single-crystalline InVO4 nanorods using an ionic liquid |
| 001342 |
| New polyphenylene-and polyphenylenevinylene-based copolymers containing triarylpyrazoline units in the main chains |
| 001354 |
| Molecular "wiring" glucose oxidase in supramolecular architecture |
| 001361 |
| Luminescent supramolecular polymers : Cd2+-directed polymerization and properties |
| 001363 |
| Long-wavelength VCSELs for optical networks and trace-gas monitoring |
| 001370 |
| Initial stages of the cubic-InN growth with the technique of the pre-deposition of indium |
| 001396 |
| Fluorene-based copolymers for color-stable blue light-emitting diodes |
| 001400 |
| Fabrication of InGaAlAs MQW buried heterostructure lasers by narrow stripe selective MOVPE |
| 001401 |
| Fabrication and optical property of single-crystalline InSb nanowire arrays |
| 001402 |
| Fabrication and characteristics of silica optical fiber doped with InP nano-semiconductor material |
| 001404 |
| Experimental and numerical study on AlGaInAs/AlGaAs distributed feedback lasers with GaInP gratings |
| 001405 |
| Equilateral-triangle-resonator injection lasers with directional emission |
| 001423 |
| Electrodeposition of p-Type CuSCN Thin Films by a New Aqueous Electrolyte With Triethanolamine Chelation |
| 001446 |
| Effect of in ions on photorefractive properties in Fe:In:LiNbO3 crystals |
| 001450 |
| Effect of Co2+, Ni2+, Cu2+, Or Zn2+ on properties of polyaniline nanoparticles |
| 001460 |
| Defect solitons in optically induced one-dimensional photonic lattices in LiNbO3:Fe crystal |
| 001470 |
| Color tunable high efficiency microcavity organic light-emitting diodes |
| 001488 |
| A portable interrogation system based on the linear InGaAs photodiode array and volume phase grating |
| 001494 |
| A Novel Optical Fibre Doped with the Nano-material as InP |
| 001495 |
| 1.3 μm gain coupled DFB laser with InGaAlAs MQW grown on absorptive InGaAsP corrugation |
| 001506 |
| Transparent conductive In2O3:Mo thin films prepared by reactive direct current magnetron sputtering at room temperature |
| 001507 |
| Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots |
| 001515 |
| The surface properties of treated ITO substrates effect on the performance of OLEDs |
| 001516 |
| The superconductivity in boron-doped polycrystalline diamond thick films |
| 001518 |
| The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 μm wavelength GaInNAs/GaAs quantum well with high indium content |
| 001525 |
| Synthesis, characterization, photophysics and electroluminescence based on a series of pyran-containing emitters |
| 001526 |
| Synthesis, characterization, and photocatalytic properties of InVO4 nanoparticles |
| 001527 |
| Synthesis and structures of morphology-controlled ZnO nano- and microcrystals |
| 001529 |
| Synthesis and photoelectrochemical behavior of nanocrystalline CdS film electrodes |
| 001532 |
| Synthesis and characterization of porous single-crystal-like In2O3 nanostructures via a solvothermal-annealing route |
| 001533 |
| Synthesis and characterization of novel red-emitting alternating copolymers based on fluorene and diketopyrrolopyrrole derivatives |
| 001537 |
| Surface and optical properties of AlGaInP films grown on GaAs by metalorganic chemical vapor deposition |
| 001542 |
| Structure, electrical and optical properties of N-In codoped ZnO thin films prepared by ion-beam enhanced deposition method |
| 001544 |
| Structural, textural and photocatalytic properties of quantum-sized In2S3-sensitized Ti-MCM-41 prepared by ion-exchange and sulfidation methods |
| 001547 |
| Structural and optical properties of violet InGaN/AlInGaN light-emitting diodes grown by MOCVD |
| 001552 |
| Single-crystal growth of mercury indium telluride (MIT) by vertical Bridgman method (VB) |
| 001556 |
| Selective separation of In(III), Ga(III), and Zn(II) from dilute solution using solvent-impregnated resin containing Di(2-ethylhexyl) phosphoric acid |
| 001558 |
| Refractive indices of textured indium tin oxide and zinc oxide thin films |
| 001563 |
| Preparation and conductivity of organic- undecatungstochromoindic heteropoly acid hybrid materials |
| 001569 |
| Piezomodulated reflectance study of self-assembled InAs quantum dots-in-a-well |
| 001571 |
| Photoluminescence characteristics of low indium composition InGaN thin films grown on sapphire by metalorganic chemical vapor deposition |
| 001575 |
| Phenylene vinylene-based electroluminescent polymers with electron transport block in the main chain |
| 001577 |
| Optimization of active region for 1.3-μm GaInAsP compressive-strain multiple-quantum-well ridge waveguide laser diodes |
| 001579 |
| Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness |
| 001580 |
| Optical properties of InN films grown by molecular beam epitaxy at different conditions |
| 001583 |
| Optical and electrical properties of indium-doped Cd0.9Zn0.1Te crystal |
| 001586 |
| Novel fluorine-containing X-branched oligophenylenes : structure-hole blocking property relationships |
| 001589 |
| Narrow stripe selective growth of InGaAlAs waveguides used for buried heterostructure lasers |
| 001590 |
| Multiplication characteristics of InP/InGaAs avalanche photodiodes with a thicker charge layer |
| 001591 |
| Monolithic integration of electroabsorption modulator and DFB laser for 10-Gb/s transmission |
| 001592 |
| Modification of electrode surface through electrospinning followed by self-assembly multilayer film of polyoxometalate and its photochromic |
| 001597 |
| Light-induced waveguide arrays in photorefractive crystals |
| 001599 |
| Investigation for the high recording sensitivity with two-center recording in LiNbO3:Fe:Ru crystals |
| 001610 |
| Improved quality of InGaN/GaN multiple quantum wells by a strain relief layer |
| 001614 |
| High-quality multiple quantum wells selectively grown with tapered masks by ultra-low-pressure MOCVD |
| 001616 |
| High-efficiency, electrophosphorescent polymers with porphyrin-platinum complexes in the conjugated backbone : Synthesis and device performance |
| 001620 |
| Heterojunction OLEDs fabricated by Eu ternary complexes with conducting secondary ligands |
| 001621 |
| Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties |
| 001622 |
| Growth of In2O3 single-crystalline film on sapphire (0001) substrate by molecular beam epitaxy |
| 001625 |
| Formation and performances of porous InVO4 films |
| 001628 |
| Ferroelectric properties of BiFeO3 films grown by sol-gel process |
| 001631 |
| Fabrication and photoelectrochemical properties of porous ZnWO4 film |
| 001633 |
| Experimental study of NRZ format wavelength conversion using electroabsorption modulator |
| 001636 |
| Evolution of mosaic structure in InN grown by metalorganic chemical vapor deposition |
| 001640 |
| Electrosynthesis of poly(3,4-ethylenedioxythiophene) microcups in the aqueous solution of LiClO4 and tri(ethylene glycol) |
| 001646 |
| Electrogenerated chemiluminescent behavior of MCLA at an indium-tin-oxide electrode |
| 001648 |
| Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy |
| 001651 |
| Effects of temperature on indium tin oxide particles synthesized by co-precipitation |
| 001654 |
| Effect of thermal cycling on the growth of intermetallic compounds at the Sn-Zn-Bi-In-P lead-free solder/Cu interface |
| 001659 |
| Dual electroluminescence from a single-component light-emitting electrochemical cell, based on water-soluble conjugated polymer |
| 001660 |
| Double-source approach to In2S3 single crystallites and their electrochemical properties |
| 001664 |
| Dipole mode photonic crystal point defect laser on InGaAsP/InP |
| 001669 |
| Designed formation of the stable adduct InP/CTAB/Clay |
| 001670 |
| Defect structure and optical damage resistance of In:Mg:Fe:LiNbO3 crystals with various Li/Nb ratios |
| 001672 |
| Crystal structures of alkali-metal indium (III) phosphates of [M3In(PO4)2]N (M = K, n = 10; M = Rb, n = 2) compounds, and band structures and chemical bond properties of [Rb3In(PO4)2]2 crystal |
| 001674 |
| Crack control in GaN grown on silicon (111) using in doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition |
| 001676 |
| Co-electrodeposition and characterization of Cu (In, Ga)Se2 thin films |
| 001679 |
| Characterization of SnS films prepared by constant-current electro-deposition |
| 001680 |
| Characterization of CuInS2 thin films prepared by ion layer gas reaction method |
| 001681 |
| Catalytic growth of In2O3 nanobelts by vapor transport |
| 001684 |
| Band gap blue shift of InGaAs/InP multiple quantum wells by different dielectric film coating and annealing |
| 001688 |
| Anisotropic growth of In(OH)3 nanocubes to nanorods and nanosheets via a solution-based seed method |
| 001693 |
| A 1.5 μm n-type InGaAsP/InGaAsP modulation-doped multiple quantum well DFB laser by MOCVD |
| 001694 |
| 3-D indium(III)-btc channel frameworks and their ion-exchange properties (btc = 1,3,5-benzenetricarboxylate) |
| 001706 |
| The sinusoidal oscillatory diffraction induced by strong refractive index change in reduced Fe:LiNbO3 crystals |
| 001711 |
| The effect of a combined InAlAs and GaAs strained buffer layer on the structure and optical property of InAs quantum dots |
| 001716 |
| Synthesis and properties of new orange red light-emitting hyperbranched and linear polymers derived from 3,5-dicyano-2,4,6-tristyrylpyridine |
| 001717 |
| Synthesis and properties of new luminescent poly(arylenevinylene) copolymers containing spirobifluorene |
| 001718 |
| Synthesis and electroluminescence properties of europium (III) complexes with new second ligands |
| 001719 |
| Synthesis and characterization of novel phenyl-substituted poly(p-phenylene vinylene) derivatives |
| 001720 |
| Synthesis and characterization of blue-light-emitting alternating copolymers of 9,9-dihexylfluorene and 9-arylcarbazole |
| 001723 |
| Syntheses and electroluminescence properties of conjugated poly(p-phenylene vinylene) derivatives bearing dendritic pendants |
| 001726 |
| Surface morphology of GaInP buffer layers and its impact on the lateral distribution of self-organized InP islands |
| 001729 |
| Study on growth and storage properties of Zn :In:Fe:LinbO3 Crystals |
| 001735 |
| Structural and optical properties of InAs/GaAs quantum dots emitting at 1.5μm |
| 001740 |
| Size-controllable growth of Single crystal In(OH)3 and In2O3 nanocubes |
| 001746 |
| Room temperature deposition of nanocrystalline cadmium peroxide thin film by electrochemical route |
| 001747 |
| Room temperature 1.25 μm emission from high indium content InxGa1-xAs/GaAs quantum wells grown by molecular beam epitaxy |
| 001752 |
| Preparation of monodispersed tin-doped indium oxide powders by hydrothermal method |
| 001754 |
| Preparation and thermoelectric properties of Cd3-xAxTeO6 (A = In, La, and Bi) ceramics |
| 001759 |
| Point-defects-induced band edge displacements and band-gap narrowing in CdIn2O4 thin films |
| 001764 |
| Passive mode locking of diode-end-pumped Nd:GdVO4 laser with an In0.25Ga0.75As output coupler |
| 001772 |
| New method of synthesizing In2O3 nanoparticles for application in volatile organic compounds (VOCs) gas sensors |
| 001776 |
| Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 μm (InyGa1-yAs/GaAs1-xSbx)/GaAs bilayer quantum wells |
| 001779 |
| Magnetron sputtering growth of InAs0.3Sb0.7 films on (100) GaAs substrates : Strong effect of growth conditions on film structure |
| 001780 |
| MOCVD route to In2O3 thin films on SiO2substrates |
| 001783 |
| Low-temperature growth of InN by MOCVD and its characterization |
| 001784 |
| Low threshold distribution feedback quantum cascade lasers at 7.6μm grown by gas source molecular beam epitaxy |
| 001786 |
| Investigation on the performances of multi-quantum barriers in a single quantum well solar cell : Photovoltaic materials and phenoma |
| 001787 |
| Investigation into the effect of LiF at the organic interface on electroluminescence |
| 001801 |
| Improved performance of OLEDs with ITO surface treatments |
| 001802 |
| Improved analytical method for determination of small-signal equivalent-circuit model parameters for InP/InGaAs HBTs |
| 001803 |
| Hydrothermal synthesis of porous FeIn2S4 microspheres and their electrochemical properties |
| 001805 |
| Holographic storage using transmission geometry in Zn:Fe:LiNbO3 crystal |
| 001812 |
| Growth and photorefractive properties of In:Fe:LiNbO3 crystals with various [Li]/[Nb] ratios |
| 001813 |
| Growth and characterization of InN on sapphire substrate by RF-MBE |
| 001818 |
| Fabrication of 2D and 3D ordered porous ZnO films using 3D opal templates by electrodeposition |
| 001824 |
| Electrodeposition of Pt nanoclusters on the surface modified by monolayer poly(amidoamine) dendrimer film |
| 001826 |
| Electrochemical deposition and characterization of wide band semiconductor ZnO thin film |
| 001831 |
| Effect of the low-temperature buffer thickness on quality of insb grown on GaAs substrate by molecular beam epitaxy |
| 001832 |
| Effect of layer thickness of immiscible alloy In0.52Al0.48As on the morphology of InAs nanostructure grown on In0.52Al0.48As/InP (001) |
| 001837 |
| Developing characteristics of thermally fixed holograms in Fe :LiNbO3 |
| 001842 |
| Continuous-wave operation quantum cascade lasers at 7.95 μm |
| 001843 |
| Construction and photoluminescence of In2O3 nanotube array by CVD-template method |
| 001844 |
| Conjugated fluorene and silole copolymers : Synthesis, characterization, electronic transition, light emission, photovoltaic cell, and field effect hole mobility |
| 001849 |
| Changing planar thin film growth into self-assembled island formation by adjusting experimental conditions |
| 001851 |
| Blue organic electroluminescent device with tetra(β-naphthyl)silane as hole blocking materials |
| 001853 |
| Annealing effect on optical properties of ZnO films fabricated by cathodic electrodeposition |
| 001854 |
| An open-framework three-dimensional indium oxalate : [In(OH)(C2O4)(H2O)]3 H2O |
| 001861 |
| A practical method of suppressing photovoltaic noise in Fe : LiNbO3 |
| 001871 |
| 1.55-μm InGaAs/InGaAlAs MQW vertical-cavity surface-emitting lasers with InGaAlAs/InP distributed Bragg reflectors |
| 001872 |
| Investigations on V-defects in quaternary AlInGaN epilayers |
| 001873 |
| Improvements of InGaN/GaN quantum-well interfaces and radiative efficiency with InN interfacial layers |
| 001874 |
| Controlled carbon nanotube sheathing on ultrafine InP nanowires |
| 001875 |
| Chemistry-mediated two-dimensional to three-dimensional transition of In thin films |
| 001876 |
| Luminescence efficiency of InGaN multiple-quantum-well ultraviolet light-emitting diodes |
| 001877 |
| Identifying Au-based Te alloys for optical data storage |
| 001878 |
| 20 meV-deep donor level in InN film of 0.76 eV band gap grown by plasma-assisted nitrogen source |
| 001879 |
| Ultrafast valence intersubband hole relaxation in InGaN multiple-quantum-well laser diodes |
| 001880 |
| Anisotropic Metal-Insulator Transition in Epitaxial Thin Films |
| 001881 |
| Electroluminescent Studies of Emission Characteristics of InGaAsN/GaAs Injection Lasers in a Wide Temperature Range |
| 001882 |
| Conducting fluorocarbon coatings for organic light-emitting diodes |
| 001883 |
| Effect of dye concentration on the charge carrier transport in molecularly doped organic light-emitting diodes |
| 001884 |
| Cluster size and composition variations in yellow and red light-emitting InGaN thin films upon thermal annealing |
| 001885 |
| Indium-assisted synthesis on GaN nanotubes |
| 001886 |
| Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature |
| 001887 |
| Double-transconductance-plateau characteristics in InGaAs/GaAs real-space transfer high-electron-mobility transistor |
| 001888 |
| Study of lateral-carrier transport in InAs quantum-dot heterostructures by optical spectroscopy |
| 001889 |
| Study of AlGaInP multiquantum-well/double heterostructure light-emitting diodes with In-added GaP window layer regrown by antimony-based liquid phase epitaxy |
| 001890 |
| InGaN/AlGaN near-ultraviolet multiple quantum well light-emitting diodes with p-InGaN tunneling contact layer |
| 001891 |
| Growth of InGaN self-assembled quantum dots and their application to photodiodes |
| 001892 |
| DC and Noise Characteristics of 4H-SiC Metal-Semiconductor-Metal Ultraviolet Photodetectors |
| 001893 |
| Characterization of Large-Area AlGaInP/Mirror/Si Light-Emitting Diodes Fabricated by Wafer Bonding |
| 001894 |
| Deep-ultraviolet emission from an InGaAs semiconductor laser |
| 001895 |
| Electron blocking and hole injection: The role of N,N′-Bis(naphthalen-1-y)-N,N′-bis(phenyl)benzidine in organic light-emitting devices |
| 001896 |
| On the origin of spin loss in GaMnN/InGaN light-emitting diodes |
| 001897 |
| Observation of coherent interfacial optical phonons in GaInP/GaAs/GaInP single quantum wells |
| 001898 |
| Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions |
| 001899 |
| Reduction in Turn-on Voltage in GaInNAs and InGaAs-Based Double-Heterojunction Bipolar Transistors |
| 001900 |
| InGaN/GaN Multi-Quantum Well Metal-Insulator Semiconductor Photodetectors with Photo-CVD SiO2 Layers |
| 001901 |
| InGaN/GaN Light Emitting Diodes with a Lateral Current Blocking Structure |
| 001902 |
| CuPc/C60 Solar Cells-Influence of the Indium Tin Oxide Substrate and Device Architecture on the Solar Cell Performance |
| 001903 |
| Mapping of multiple-quantum-well layers and structure of V defects in InGaN/GaN diodes |
| 001904 |
| Interpretation of anomalous temperature dependence of anti-Stokes photoluminescence at GaInP2/GaAs interface |
| 001906 |
| High-power AlGaInP light-emitting diodes with metal substrates fabricated by wafer bonding |
| 001908 |
| Tunable and white light-emitting diodes of monolayer fluorinated benzoxazole graft copolymers |
| 001909 |
| Synthesis of InN/InP core/sheath nanowires |
| 001910 |
| Mechanism of enhanced luminescence in InxAlyGa1-x-yN quaternary epilayers |
| 001911 |
| Study of InGaP/InGaAs double delta-doped channel heterostructure field-effect transistors |
| 001912 |
| Phonon-Assisted Auger Recombination Processes in InGaAs/GaAs Single-Quantum-Well Lasers |
| 001913 |
| Electrical Properties of Melt-Epitaxy-Grown InAs0.04Sb0.96 Layers with Cutoff Wavelength of 12 μm |
| 001914 |
| Observation of spontaneous ordering in the optoelectronic material GaInNP |
| 001915 |
| Comment on Piezoelectric effect on Al0.35-δInδGa0.65N/GaN heterostructures [Appl. Phys. Lett. 80, 2684 (2002)] |
| 001916 |
| Electroreflectance study on the polarization field in InGaN/AlInGaN multiple quantum wells |
| 001917 |
| Ultra-High-Density InGaN Quantum Dots Grown by Metalorganic Chemical Vapor Deposition |
| 001918 |
| One-polymer active pixel |
| 001919 |
| Polarized luminescence and absorption of highly oriented, fully conjugated, heterocyclic aromatic rigid-rod polymer poly-p-phenylenebenzobisoxazole |
| 001920 |
| [Co(en)3][In3(H2PO4)6(HPO4)3].H2O: A new layered indium phosphate templated by cobalt complex |
| 001922 |
| Transport properties of InAs epilayers grown on GaAs substrates by using the prelayer technique |
| 001923 |
| Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy |
| 001924 |
| The synthesis of In, In2O3 nanowires and In2O3 nanoparticles with shape-controlled |
| 001929 |
| The first indium-organic two-dimensional layer network with rhombus grids |
| 001930 |
| The fabrication of self-aligned InAs nanostructures on GaAs(331)A substrates |
| 001932 |
| The 2/1 cubic approximant of the Ag42In42Ca16 icosahedral quasicrystal |
| 001933 |
| Temperature effects on optical properties of InN thin films |
| 001935 |
| Synthesis of metastable hexagonal In2O3 nanocrystals by a precursor-dehydration route under ambient pressure |
| 001937 |
| Synthesis and characterization of poly(1,4-phenylenevinylene) derivatives containing liquid crystalline oxadiazole groups |
| 001938 |
| Synthesis and characterization of naphthyl-substituted poly(P-phenylenevinylene)s with few structural defects for polymer light-emitting diodes |
| 001942 |
| Study on the perfection of in situ P-injection synthesis LEC-InP single crystals |
| 001943 |
| Study on the effects of well number on temperature characteristics in 1.3-μm InGaAsP-InP quantum-well lasers |
| 001946 |
| Study of stimulated emission from InGaN/GaN multiple quantum well structures |
| 001947 |
| Study of photoluminescence and absorption in phase-separation InGaN films |
| 001949 |
| Studies on microstructure bilayer film of ultrasonic dipped cadmium sulfide and d.c. sputtered indium tin oxide |
| 001951 |
| Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows |
| 001952 |
| Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition |
| 001953 |
| Steady-state and small signal analysis of terahertz ballistic tunnel transit-time oscillator |
| 001955 |
| Soluble, saturated-red-light-emitting poly(p-phenylenevinylene) containing triphenylamine units and cyano groups |
| 001956 |
| Sol-gel preparation of poly(ethylene glycol) doped indium tin oxide thin films for sensing applications |
| 001964 |
| Pure red organic electroluminescent devices using a novel europium(III) complex as emitting layer |
| 001967 |
| Polyelectrolyte multilayer as matrix for electrochemical deposition of gold clusters: Toward super-hydrophobic surface |
| 001970 |
| Photoluminescence study of InGaN/GaN quantum dots grown on passivated GaN surface |
| 001972 |
| Organic light-emitting diodes with improved hole-electron balance by using molecular layers of phthalocyanine to modify the anode surface |
| 001973 |
| Ordering growth of InAs quantum dots on ultra-thin InGaAs strained layer |
| 001974 |
| Optimization of InGaAsP-InP tensile strained multiple quantum-well structures emitting at 1.34 μm |
| 001975 |
| Optical property of self-assembled InAs quantum dots in Al0.5Ga0.5As barriers grown by molecular beam epitaxy |
| 001976 |
| Optical properties of highly disordered InGaP by solid-source molecular beam epitaxy with a GaP decomposition source |
| 001980 |
| New series of highly phenyl-substituted polyfluorene derivatives for polymer light-emitting diodes |
| 001982 |
| Modification of the electrodes of organic light-emitting devices using the SnO2 ultrathin layer |
| 001984 |
| Micro-raman study of hexagonal InN thin films grown by reactive sputtering on GaAs |
| 001987 |
| MOVPE growth of grade-strained bulk InGaAs/InP for broad-band optoelectronic device applications |
| 001988 |
| MOVPE growth and fabrication of 1.3 μm high power InGaAsP-InP polarization-insensitive superluminescent diodes with complex strained quantum wells |
| 001992 |
| Influence of threading dislocations on the properties of InGaN-based multiple quantum wells |
| 001993 |
| Influence of post-growth treatment on the holographic storage properties of In:Fe:LiNbO3 |
| 001995 |
| Indium phosphide crystal growth from phosphorus-rich melt |
| 001996 |
| Indium mole fraction effect on the structural and optical properties of quaternary AlInGaN epilayers |
| 001997 |
| InGaN/GaN multi-quantum dot light-emitting diodes |
| 001999 |
| In2O3 nanoparticles synthesized by mechanochemical processing |
| 001A00 |
| Hydrothermal synthesis of single crystalline In(OH)3 nanorods and their characterization |
| 001A01 |
| Hydrothermal synthesis and characterization of two new three-dimensional fluoroindium phosphates In4(PO4)4(H2O)4F2.C6H14N2 and In8(P04)8(H2O)8F4. (C5H14N2)2 |
| 001A04 |
| High-quality poly[2-methoxy-5-(2'-ethylhexyloxy)-p-phenylenevinylene] synthesized by a solid-liquid two-phase reaction: Characterizations and electroluminescence properties |
| 001A08 |
| Growth of heavily Zn-doped InGaAs at low temperature by LP-MOCVD |
| 001A09 |
| Growth of In doped CdZnTe by vertical Bridgman method and the effect of In on the crystal properties |
| 001A10 |
| Growth and optical properties of In:Er:LiNbO3 crystals |
| 001A12 |
| Femtosecond laser-induced crystallization in amorphous Sb-rich AgInSbTe films |
| 001A14 |
| Fabrication and complete characterization of polarization insensitive 1310 nm InGaAsP-InP quantum-well semiconductor optical amplifiers |
| 001A17 |
| Experimental and theoretical studies of the propargyl-allenylindium system |
| 001A20 |
| Electrochromic properties of sulfonic acid ring-substituted polyaniline in aqueous and non-aqueous media |
| 001A23 |
| Effects of indium doping on the properties of AlAs/GaAs quantum wells and inverted AlGaAs/GaAs two-dimensional electron gas |
| 001A24 |
| Effects of V/III ratio on InGaAs and InP grown at low temperature by LP-MOCVD |
| 001A25 |
| Effects of TMIn flow on the interface and optical properties of InGaN/GaN mutiple quantum wells |
| 001A26 |
| Effect of trimethylgallium flow on the structural and optical properties of InGaN/GaN multiple quantum wells |
| 001A31 |
| Design of a resonant-cavity-enhanced GaInAsSb/GaSb photodetector |
| 001A34 |
| Crack-free InAlGaN quaternary alloy films grown on Si(1 1 1) substrate by metalorganic chemical vapor deposition |
| 001A35 |
| Composition dependence of the Raman A1 mode and additional mode in tetragonal Cu-In-Se thin films |
| 001A36 |
| Comparison of the thermo- and electro-optical properties of doped and un-doped MOM based PDLCs |
| 001A37 |
| Characterization of InAs quantum dots on lattice-matched InAlGaAs/InP superlattice structures |
| 001A38 |
| Characteristics of doped indium in Cd0.9Zn0.1Te grown by the Bridgman method |
| 001A39 |
| Characteristics of an InP-InGaAs-InGaAsP HBT |
| 001A40 |
| Catalytic oxidation of nitric oxide and nitrite mediated by water-soluble high-valent iron porphyrins at an ITO electrode |
| 001A41 |
| Calculation of the R0A product in n+-n-p and p+-p-n GaAnAsSb infrared detectors |
| 001A42 |
| Annealing ambient controlled deep defect formation in InP |
| 001A45 |
| An approach to determine the chemical composition in InGaN/GaN multiple quantum wells |
| 001A47 |
| A novel transparent pn+ junction based on indium tin oxides |
| 001A49 |
| A high power InGaAs/GaAsP vertical-cavity surface-emitting laser and its temperature characteristics |
| 001A50 |
| 1310 nm AlGaInAs-InP polarization insensitive multiple quantum well optical amplifier |
| 001A52 |
| Breakdown characteristics of InP/InGaAs composite-collector double heterojunction bipolar transistor |
| 001A53 |
| Top-emitting organic light-emitting devices using surface-modified Ag anode |
| 001A54 |
| InN island shape and its dependence on growth condition of molecular-beam epitaxy |
| 001A56 |
| Comparison of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes with/without GaInAsP and AIGaInAs Graded-Composition Layers |
| 001A58 |
| Enhancement of room-temperature photoluminescence in InAs quantum dots |
| 001A59 |
| Electron-beam-induced current and cathodoluminescence characterization of InGaAs strain-balanced multiquantum well photovoltaic cells |
| 001A60 |
| Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31 |
| 001A61 |
| Magnetic properties of parabolic quantum dots in the presence of the spin-orbit interaction |
| 001A62 |
| Investigation of InGaP/GaAs heterojunction bipolar transistor with doping graded base |
| 001A63 |
| Comparative hydrogen sensing performances of Pd- and Pt-InGaP metal-oxide-semiconductor Schottky diodes |
| 001A64 |
| Response to Comment on AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy [Appl. Phys. Lett. 83, 3626 (2003)] |
| 001A65 |
| Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n-GaN layers |
| 001A66 |
| Scaling of three-dimensional InN islands grown on GaN(0001) by molecular-beam epitaxy |
| 001A67 |
| Ordering effects on optical transitions in GaxIn1-xP/(Al0.66Ga0.34)yIn1-yP quantum wells studied by photoluminescence and reflectivity spectroscopy |
| 001A68 |
| Optical properties of p-type In-doped SrTiO3 thin films |
| 001A69 |
| Improving the Performance of AlGaInP Laser Diode by Oxide Annealing |
| 001A70 |
| Silicon Doping Induced Increment of Quantum Dot Density |
| 001A71 |
| Multiple negative differential resistance of InP/InGaAs superlattice-emitter resonant-tunneling bipolar transistor at room temperature |
| 001A72 |
| Properties of Cu/Au Schottky contacts on InGaP layer |
| 001A73 |
| Emission properties of a dual ion/electron point emitter based on In-Bi alloy |
| 001A74 |
| Piezoelectric, electro-optical, and photoelastic effects in InxGa1-xN/GaN multiple quantum wells |
| 001A75 |
| Aluminum-doped zinc oxide films as transparent conductive electrode for organic light-emitting devices |
| 001A77 |
| The Comparisons between GaP Window Layers of Double-Heterojunction Light-Emitting Diodes using Various Dopants and Source Melts Regrown by Indium-Addition Liquid Phase Epitaxy |
| 001A78 |
| Capacitance Characteristics in InN Thin Films Grown by Reactive Sputtering on GaAs |
| 001A79 |
| Large electric-field induced electron drift velocity observed in an InxGa1-xAs-based p-i-n semiconductor nanostructure at T=300 K |
| 001A80 |
| Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths |
| 001A81 |
| Highly strained 1.24-μm InGaAs/GaAs quantum-well lasers |
| 001A82 |
| Improved performance and stability of organic light-emitting devices with silicon oxy-nitride buffer layer |
| 001A83 |
| Electron transit time and reliable mobility measurements from thick film hydroxyquinoline-based organic light-emitting diode |
| 001A84 |
| Transport characteristics of InAs/GaAs quantum-dot infrared photodetectors |
| 001A85 |
| Room-temperature ultraviolet-emitting In2O3 nanowires |
| 001A86 |
| Bright red-emitting electrophosphorescent device using osmium complex as a triplet emitter |
| 001A87 |
| AlGaInP Light Emitting Diode with a Modulation-Doped Superlattice |
| 001A88 |
| Thermal property of tunnel-regenerated multiactive-region light-emitting diodes |
| 001A89 |
| Effect of InGaAs capping layer on the properties of InAs/InGaAs quantum dots and lasers |
| 001A90 |
| Surface band-bending effects on the optical properties of indium gallium nitride multiple quantum wells |
| 001A91 |
| Very Low Threshold Current Operation of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes |
| 001A92 |
| Quantum-well-width dependencies of postgrowth thermal annealing effects of InGaN/GaN quantum wells |
| 001A93 |
| Temperature dependence of photoreflectance in InAs/GaAs quantum dots |
| 001A94 |
| Observation of self-organized superlattice in AlGaInAsSb pentanary alloys |
| 001A96 |
| Optical Degradation of Indium Tin Oxide Thin Films Induced by Hydrogen-Related Room Temperature Reduction |
| 001A98 |
| Influences of central metal ions on the electroluminescene and transport properties of tris-(8-hydroxyquinoline) metal chelates |
| 001A99 |
| Characteristics of a field-effect transistor with stacked InAs quantum dots |
| 001B00 |
| Effect of current spreading on luminescence improvement in selectively oxidized AlGaInP light-emitting diodes |
| 001B01 |
| Depletion- and enhancement-mode In0.49Ga0.51P/InGaAs/AlGaAs high-electron-mobility transistors with high-breakdown voltage |
| 001B02 |
| Structural Design of a Passive Matrix (PM) Color Organic Light-Emitting Device |
| 001B03 |
| High-Indium-Content InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes |
| 001B04 |
| GaN Metal-Semiconductor-Metal Visible-Blind Photodetectors with Transparent Indium-Tin-Oxide Contact Electrodes |
| 001B05 |
| Persistent photoconductivity in InxAlyGa1-x-yN quaternary alloys |
| 001B06 |
| In0.6Ga0.4As/GaAs quantum-dot infrared photodetector with operating temperature up to 260 K |
| 001B07 |
| Spectral analysis of high-harmonic coherent acoustic phonons in piezoelectric semiconductor multiple quantum wells |
| 001B08 |
| Strong green luminescence in quaternary InAlGaN thin films |
| 001B09 |
| Tunneling through InAs quantum dots in AlGaAs/GaAs double barrier resonant tunneling diodes with InGaAs quantum well emitters |
| 001B10 |
| Differential surface photovoltage spectroscopy characterization of a 1.3 μm InGaAlAs/InP vertical-cavity surface-emitting laser structure |
| 001B11 |
| Comparison of p-Side Down and p-Side Up GaN Light-Emitting Diodes Fabricated by Laser Lift-Off |
| 001B12 |
| Converse piezoelectric effect and photoelastic effect in InGaN/GaN multiple quantum wells |
| 001B13 |
| Mode splitting in photoluminescence spectra of a quantum-dot-embedded microcavity |
| 001B14 |
| Formation and structure of inverted hexagonal pyramid defects in multiple quantum wells InGaN/GaN |
| 001B15 |
| Atomic-scale strain field and In atom distribution in multiple quantum wells InGaN/GaN |
| 001B16 |
| Microstructural Effects of Recording Marks on Erasing in AgInSbTe Phase-Change Optical Disk |
| 001B17 |
| Forbidden transitions and the effective masses of electrons and holes in In1-xGaxAs/InP quantum wells with compressive strain |
| 001B18 |
| Study on dc characteristics of an interesting InP/InGaAs tunneling-emitter bipolar transistor with double heterostructures |
| 001B19 |
| Kinetics of picosecond laser pulse induced charge separation and proton transfer in bacteriorhodopsin |
| 001B22 |
| Wavelength sensing by dual photodetectors |
| 001B23 |
| Void formation and failure in InGaN/AlGaN double heterostructures |
| 001B24 |
| Vibrational analysis of oxygen-plasma treated indium tin oxide |
| 001B25 |
| Thermodynamic modeling of the Au-In-Sn system |
| 001B29 |
| The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing |
| 001B31 |
| The beam properties of high-power InGaAs/AlGaAs quantum well lasers |
| 001B34 |
| Synthesis and characterization of a novel poly(p-phenylenevinylene) derivative containing dibenzothiophene-5,5-dioxide moiety in the main chain with high electron affinity |
| 001B35 |
| Surface melting of polycrystals Pb and In within 1 K below melting temperature |
| 001B37 |
| Subbands transport of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures |
| 001B38 |
| Study on the surface wetting properties of treated indium-tin-oxide anodes for polymer electroluminescent devices |
| 001B40 |
| Studies on room temperature ionic liquid InCl3-EMIC |
| 001B41 |
| Structures of indium oxide nanobelts |
| 001B42 |
| Structure defects and optical damage resistance in doubly doped In:Nd:LiNbO3 crystal waveguide substrates |
| 001B43 |
| Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method |
| 001B44 |
| Structure change near the magnetic-transition temperature in the perovskite compound Ba(In0.5Sb0.5)03 |
| 001B45 |
| Structure and optical properties of upper In(Ga)As quantum dots on a different seed layer with a thin GaAs spacer layer |
| 001B46 |
| Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0 0 0 1) sapphire substrate |
| 001B47 |
| Strain relaxation of InAs epilayer on GaAs under In-rich conditions |
| 001B48 |
| Steps toward industrialization of Cu-III-VI2 thin-film solar cells: a novel full in-line concept |
| 001B49 |
| Solvothermal synthesis of the ternary semiconductor AInS2(A = Na, K) nanocrystal at low temperature |
| 001B50 |
| Site-selective lateral multilayer assembly of bienzyme with polyelectrolyte on ITO electrode based on electric field-induced directly layer-by-layer deposition |
| 001B51 |
| Role of different cap layers tuning the wavelength of self-assembled InAs/GaAs quantum dots |
| 001B53 |
| Raman spectroscopic studies of InAs epilayers grown on the GaAs (001) substrates |
| 001B55 |
| Preparation of ultrafine InN powder by the nitridation of In2O3 or In(OH)3 and its thermal stability |
| 001B56 |
| Preparation and characterization of indium tin oxide films formed by oxygen ion beam assisted deposition |
| 001B57 |
| Preparation and characterization of chloroindium phthalocyanine nanoparticles from complexation-mediated solubilization |
| 001B58 |
| Preliminary insight into the formation process of InP and GaP nanocrystals |
| 001B59 |
| Polyol-mediated synthesis of porous nanocrystalline CuInS2 foam |
| 001B60 |
| Piezoelectric coefficient of InN thin films prepared by magnetron sputtering |
| 001B61 |
| Photoelectrochemical performance of Ag-TiO2/ITO film and photoelectrocatalytic activity towards the oxidation of organic pollutants |
| 001B62 |
| Photocatalytic degradation of methylene blue on CaIn2O4 under visible light irradiation |
| 001B63 |
| Photo-refractive properties of Mg:In:Fe:LiNbO3 crystal |
| 001B68 |
| Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells |
| 001B70 |
| One-step nanocasting synthesis of highly ordered single crystalline indium oxide nanowire arrays from mesostructured frameworks |
| 001B72 |
| Nonvolatile two-color photorefractive holographic recording in In:Ce:Cu :LiNbO3 |
| 001B73 |
| Narrow blue light-emitting diodes based on a copolymer consisting of fluorene and quinoline units |
| 001B74 |
| Nanocrystal size control by bath temperature in electrodeposited CdSe thin films |
| 001B75 |
| Multifunctional organic-inorganic multilayer films of tris(2,2'-bipyridine)ruthenium and decatungstate |
| 001B76 |
| Microstructure and mechanical properties of small amounts of In2O3 reinforced Pb(ZrxTi1-x)O3 ceramics |
| 001B77 |
| Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances |
| 001B81 |
| Magnetic properties and giant magnetoresistance in Fe0.35(In2O3)0.65 granular film |
| 001B83 |
| Luminescence of In2S3 nanocrystallites embedded in sol-gel silica xerogel |
| 001B84 |
| Localized exciton dynamics in AlInGaN alloy |
| 001B86 |
| Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells |
| 001B87 |
| Investigation on photorefractive properties of In:Mn:Fe:LiNbO3 |
| 001B88 |
| Influence of the preparation conditions on the properties of CuInS2 films deposited by one-stage RF reactive sputtering |
| 001B90 |
| In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate |
| 001B92 |
| Improved performance of 1.3 μm InGaAsP-InP lasers with an AlInAs electron stopper layer |
| 001B93 |
| Hydrothermal synthesis and characterization of CuIn2.0Se3.5 nanocrystallites |
| 001B94 |
| Hydrothermal synthesis and characterization of AgInSe2 nanorods |
| 001B96 |
| High sensitivity chlorine gas sensors using CdIn2O4 thick film prepared by co-precipitation method |
| 001B98 |
| Growth temperature effect on the optical and material properties of AlxInxGa1-x-yN epilayers grown by MOCVD |
| 001B99 |
| Growth of nanoscale InGaN self-assembled quantum dots |
| 001C00 |
| Growth and optical properties of In:Nd:LiNbO3 crystals |
| 001C01 |
| Growing and welding branched-structure semiconducting In2O3 nanowires |
| 001C02 |
| Giant magnetoresistance in Fe-In2O3 granular films |
| 001C03 |
| GalnNAs: Growth and characterization |
| 001C06 |
| Fanning scattering in LiNbO3 at 750-850 nm induced by femtosecond laser pulses |
| 001C07 |
| Fabrication and photoluminescence characteristics of single crystalline In2O3 nanowires |
| 001C08 |
| Fabrication and characterization of indium-doped p-type SnO2 thin films |
| 001C11 |
| Experimental and theoretical study on the electronic states and spectra of InBr |
| 001C12 |
| Epitaxial growth of high-quality ZnSSe on ZnSSe/In/glass substrate |
| 001C13 |
| Electronic structure of vertically stacked InAs self-assembled quantum dots by deep level transient spectroscopy |
| 001C15 |
| Electric-field-induced strain and piezoelectric properties of a high Curie temperature Pb(In1/2Nb1/2)O3-PbTiO3single crystal |
| 001C16 |
| Effects of electrode modifications on the performance of polymer light-emitting electrochemical cells |
| 001C17 |
| Effects of ammonia flow at growth temperature ramping process on optical properties of InGaN/GaN multiple quantum wells |
| 001C18 |
| Effects of TMIn flow rate of barrier layer on the optical and structural properties of InxGa1-xN/InyGa1-yN multiple quantum wells |
| 001C20 |
| Effect of surface treatments on Schottky contact on n-AlxGa1-xN/GaN heterostructures |
| 001C21 |
| Effect of magnetic heat-treatment on magnetic properties and microstructure of Nd10Fe84-xB6Inx(x= 0,1) nanocomposite |
| 001C23 |
| Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots |
| 001C24 |
| Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs (001) substrate |
| 001C25 |
| Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs |
| 001C27 |
| Deposition of CuInS2 thin films by RF reactive sputtering with a ZnO:Al buffer layer |
| 001C29 |
| Deep level transient spectroscopy of vertically stacked InAs/Al0.5Ga0.5As self-assembled quantum dots |
| 001C31 |
| Covalently attached self-assembly of Ultrathin films from hydroxy-containing porphyrin and diazoresin |
| 001C32 |
| Correlation of viscosity and structural changes of indium melt |
| 001C33 |
| Correlation of structural and optical investigation of InGaAs/InAlAs quantum cascade laser |
| 001C35 |
| Capacitance-voltage spectroscopy of In0.5Ga0.5As self-assembled quantum dots in double quantum wells under selective photo-excitation |
| 001C37 |
| Blue electroluminescence from a processable derivative of ppv based copolymer with tri(ethylene oxide) sigments [segments] in the backbone |
| 001C38 |
| Blue and white organic light-emitting diodes based on 4,4'-bis(2,2' diphenyl vinyl)-1,1'-biphenyl |
| 001C40 |
| Atomic and electronic structure of (√3 x √3)R 30°: In phase on Cu(111) |
| 001C43 |
| An increase of photorefractive sensitivity in In:LiNbO3 crystal |
| 001C45 |
| Accurate interband-energy measurements from Ellipsometric spectra |
| 001C46 |
| Abnormal temperature dependence of photoluminescence from self-assembled InAs quantum dots covered by an InAlAs/InGaAs combination layer |
| 001C49 |
| A route to Ag-catalyzed growth of the semiconducting In2O3 nanowires |
| 001C50 |
| A novel method to realize InGaN self-assembled quantum dots by metalorganic chemical vapor deposition |
| 001C51 |
| A novel emitting polymer with bipolar carrier transporting abilities |
| 001C53 |
| 1.55 μm AlGaInAs/InP polarization-insensitive optical amplifier with tensile strained wells grown by MOCVD |
| 001C54 |
| Pure red electroluminescence from a host material of binuclear gallium complex |
| 001C55 |
| Hole emission processes in InAs/GaAs self-assembled quantum dots |
| 001C56 |
| Growth of High-Quality Epitaxial InN Film with High-Speed Reactant Gas by Organometallic Vapor-Phase Epitaxy |
| 001C57 |
| Localized and quantum-well state excitons in AlInGaN laser-diode structure |
| 001C58 |
| Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures |
| 001C59 |
| Fabrication and structural analysis of Al, Ga, and In nanocluster crystals |
| 001C60 |
| Self-assembled GaAs antiwires in In0.53Ga0.47As matrix on (100) InP substrates |
| 001C61 |
| Strong Screening Effect of Photo-Generated Carriers on Piezoelectric Field in In0.13Ga0.87N/In0.03Ga0.97N Quantum Wells |
| 001C62 |
| Metallic wafer bonding for the fabrication of long-wavelength vertical-cavity surface-emitting lasers |
| 001C63 |
| Enhanced hole injections in organic light-emitting devices by depositing nickel oxide on indium tin oxide anode |
| 001C65 |
| Anode modification of polyfluorene-based polymer light-emitting devices |
| 001C68 |
| Degree of ordering in Al0.5In0.5P by Raman scattering |
| 001C69 |
| Deep levels in semi-insulating InP obtained by annealing under iron phosphide ambiance |
| 001C71 |
| Experimental and theoretical study of the electronic structures of Ni3Al, Ni3Ga, Ni3In, and NiGa |
| 001C73 |
| Wavelength of Emission from InGaAsN Quantum Wells as a Function of Composition of the Quaternary Compound |
| 001C74 |
| Photoreflectance and photoluminescence spectroscopy of the lattice-matched InGaAs/InAlAs single quantum well |
| 001C75 |
| Ordering parameter and band-offset determination for ordered GaxIn1-xP/(Al0.66Ga0.34)yIn1-yP quantum wells |
| 001C76 |
| Microstructure evolution and failure mechanism for Cu/Au Schottky contacts to InGaP layer |
| 001C77 |
| Investigation of transparent and conductive undoped Zn2In2O5-x films deposited on n-type GaN layers |
| 001C78 |
| Effect of InGaP Barrier Thickness on the Performance of 1.3-μm InAsP/InP/InGaP Strain-Compensated Multiple-Quantum-Well Laser Diodes |
| 001C79 |
| Multiple-component photoluminescence decay caused by carrier transport in InGaN/GaN multiple quantum wells with indium aggregation structures |
| 001C80 |
| Integral and fractional charge filling in a InAs/GaAs quantum dot p-i-n diode by capacitance-voltage measurement |
| 001C81 |
| Photoluminescence study of hydrogen passivation in InAs1-xNx/InGaAs single-quantum well on InP |
| 001C82 |
| Thickness-dependent renormalization of strain effects on self-organized InAs quantum dots grown on GaAs |
| 001C83 |
| Study of InGaP/GaAs/InGaAs high-barrier gate and heterostructure-channel field-effect transistors |
| 001C84 |
| High-density plasma-induced etch damage of wafer-bonded AlGaInP/mirror/Si light-emitting diodes |
| 001C85 |
| Growth and coalescence evolution of InAs on GaAs by molecular beam epitaxy |
| 001C86 |
| Extended radio frequency nonlinear model for power prediction of AlGaAs/InGaAs pseudomorphic high electron mobility transistors |
| 001C87 |
| 1.3 μm InAsP multiquantum well laser diodes with the n-type modulation-doped InAsP/InP/InGaP active region |
| 001C88 |
| Zero-field spin splitting in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates using Shubnikov-de Haas measurements |
| 001C89 |
| White electroluminescence from hydrogenated amorphous-SiNx thin films |
| 001C90 |
| Piezoelectric effect on Al0.35-δInδGa0.65N/GaN heterostructures |
| 001C91 |
| High-efficiency white organic light-emitting devices with dual doped structure |
| 001C92 |
| Quasiregular quantum-dot-like structure formation with postgrowth thermal annealing of InGaN/GaN quantum wells |
| 001C94 |
| Scanning electron filling modulation reflectance of charged InGaAs self-assembled quantum dot |
| 001C95 |
| Fe-Diffusion-Induced Defects in InP Annealed in Iron Phosphide Ambient |
| 001C96 |
| Real index-guided InGaAlP red lasers with buried tunnel junctions |
| 001C97 |
| Mechanism of enhanced luminescence in InxAlyGa1-x-yN quaternary alloys |
| 001C98 |
| Emission properties of a dual ion/electron source based on Au-In alloy |
| 001C99 |
| Sulphur passivation of the InGaAsSb/GaSb photodiodes |
| 001D00 |
| Effect of composition inhomogeneity on the photoluminescence of InGaN/GaN multiple quantum wells upon thermal annealing |
| 001D01 |
| Ohmic contacts to p-type GaN mediated by polarization fields in thin InxGa1-xN capping layers |
| 001D02 |
| Nitrogen-induced enhancement of the electron effective mass in InNxAs1-x |
| 001D03 |
| ZnMgSSe Metal-Semiconductor-Metal Visible-Blind Photodetectors with Transparent Indium-Tin-Oxide Contact Electrodes |
| 001D04 |
| Investigation of the thermal degradation mechanism for Cu/Au Schottky contacts to the InGaP layer |
| 001D05 |
| Characteristics of δ-doped InP heterostructures using In0.34Al0.66As0.85Sb0.15 Schottky layer |
| 001D07 |
| InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular-beam epitaxy |
| 001D08 |
| Low-Voltage-Operation High-Power-Density AlGaAs/InGaAs Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistor for Personal Handy-Phone Handset Application |
| 001D09 |
| Selective growth of single InAs quantum dots using strain engineering |
| 001D10 |
| Enhanced performance of organic light-emitting devices by atmospheric plasma treatment of indium tin oxide surfaces |
| 001D11 |
| Direct measurement of piezoelectric field in In0.23Ga0.77N/GaN multiple quantum wells by electrotransmission spectroscopy |
| 001D12 |
| Vapor-solid growth route to single-crystalline indium nitride nanowires |
| 001D13 |
| Tuning of exciton-photon coupling in a planar semiconductor microcavity by applying hydrostatic pressure |
| 001D17 |
| The structures, electronic states and properties in liquid Ga-Sb and In-Sb systems |
| 001D18 |
| The structure and current-voltage characteristics of multi-sheet InGaN quantum dots grown by a new multi-step method |
| 001D19 |
| The mechanism of blueshift in excitation-intensity-dependent photoluminescence spectrum of nitride multiple quantum wells |
| 001D20 |
| The low-frequency electrical noise as reliability estimation for high power semiconductor lasers |
| 001D22 |
| The effects of concomitant In and N incorporation on the photoluminescence of GaInNAs |
| 001D25 |
| Synthesis of oxygen-free nanosized InN by pulse discharge |
| 001D26 |
| Synthesis of oxygen-deficient indium-tin-oxide (ITO) nanofibers |
| 001D27 |
| Synthesis of novel nitrogen- and sulfur-containing conjugated polymers used as hole-transporting materials for organic light-emitting diodes |
| 001D28 |
| Synthesis and photoluminescence of single-crystalline In2O3 nanowires |
| 001D29 |
| Synthesis and electroluminescence properties of a novel poly(paraphenylene vinylene)-based copolymer with tri(ethylene oxide) segments on the backbone |
| 001D30 |
| Substrate dependence of thermal effect on organic light-emitting films |
| 001D34 |
| Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer |
| 001D35 |
| Structural, optical, and electrical properties of indium tin oxide films with corundum structure fabricated by a sol-gel route based on solvothermal reactions |
| 001D36 |
| Strain relaxation of InP film directly grown on GaAs patterned compliant substrate |
| 001D37 |
| Statistical investigation on morphology development of gallium nitride in initial growth stage |
| 001D38 |
| Self-assembled large-scale and cylindrical CuInSe2 quantum dots on indium tin oxide films |
| 001D39 |
| Research of spatial resolution in external electro-optic probing |
| 001D43 |
| Preparation of InN nanocrystals by solvo-thermal method |
| 001D44 |
| Photoluminescence of InAs self-organized quantum dots on (001)InP substrate with GaAs interlayer |
| 001D48 |
| Optical properties of nanocrystalline Ga1-xInxSb/SiO2 films |
| 001D49 |
| Optical properties of Ag8In14Sb55Te23 phase-change films |
| 001D51 |
| Numerical simulation of macrosegregation of indium phase in rapidly solidified Al-In hypermonotectic sheets |
| 001D52 |
| Novel homogeneous alignment of liquid crystal induced by low-weight photosensitive monomers |
| 001D56 |
| Luminescence of Cu2+ and In3+ co-activated ZnS nanoparticles |
| 001D57 |
| Low temperature photoluminescence of InAs self-organized quantum dots on (001) InP substrate with GaAs interlayer |
| 001D58 |
| Large-scale synthesis of In2O3 nanowires |
| 001D59 |
| Interface magnetic properties of epitaxial Fe-InAs heterostructures |
| 001D61 |
| Influence of strain on annealing effects of In(Ga)As quantum dots |
| 001D62 |
| Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots |
| 001D63 |
| InAsyP1-y/InP quantum wells grown by solid source molecular beam epitaxy using As2 and As4 |
| 001D64 |
| Improved purity of long-wavelength InAsSb epilayers grown by melt epitaxy in fused silica boats |
| 001D66 |
| Hydrothermal synthesis and crystal structure of the first ammonium indium(III) phosphate NH4In(OH)PO4 with spiral chains of InO4(OH)2 |
| 001D67 |
| High-quality indium tin oxide films prepared at room temperature by oxygen ion beam assisted deposition |
| 001D69 |
| Growth behavior and crystal structures of different phases in MnxCd1-xIn2Te4 grown by Bridgman method |
| 001D70 |
| Growth and optical properties of nanocrystalline Ga0.81In0.19Sb embedded in silica film |
| 001D71 |
| Green electroluminescent device with a terbium β-diketonate complex as emissive center |
| 001D74 |
| Fabrication and characterization of InP nanocrystals embedded in SiO2 matrix by RF magnetron co-sputtering |
| 001D75 |
| Fabrication and characterization of In2O3 nanowires |
| 001D76 |
| Experimental proof of cathodoluminescence-like (CL-like) emission for inorganic/organic heterojunction |
| 001D77 |
| Excitonic photoluminescence properties of nanocrystalline GaSb and Ga0.62In0.38Sb embedded in silica films |
| 001D79 |
| Evaluation of carbon films electrodeposited on different substrates from different organic solvents |
| 001D80 |
| Estimation of InN phase inclusion in InGaN films grown by MOVPE |
| 001D81 |
| Enhanced room-temperature geometric magnetoresistance in a modified van der Pauw disk |
| 001D83 |
| Efficient light emitting diodes with Teflon buffer layer |
| 001D84 |
| Effect on the optical properties and surface morphology of cubic GaN grown by metalorganic chemical vapor deposition using isoelectronic indium surfactant doping |
| 001D85 |
| Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots |
| 001D86 |
| Dye-sensitized anatase titanium dioxide nanocrystalline with (001) preferred orientation induced by Langmuir-Blodgett monolayer |
| 001D87 |
| Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry |
| 001D88 |
| Dependence of optical properties on the structure of multi-layer self-organized InAs quantum dots emitting near 1.3 μm |
| 001D89 |
| Crystal structure of sodium indium (monohydrogenmonophosphate-dihydrogenmonoborate-monophosphate), NaIn[BP2O7(OH)3] |
| 001D90 |
| Crystal structure of rubidium indium (monophosphate-hydrogenmonoborate-monophosphate), RbIn][BP2O8(OH)] |
| 001D91 |
| Crystal structure of potassium indium (monophosphate-hydrogenmonoborate-monophosphate), KIn[BP2O8(OH)] |
| 001D92 |
| Crystal structure of dilithium indium (monophosphate-monohydrogen-monophosphate), Li2In[(PO4)(HPO4)] |
| 001D93 |
| Crystal structure of diammonium indium (monophosphate-monohydrogen-monophosphate), (NH4)2In[(PO4)(HPO4)] |
| 001D94 |
| Crystal structure of ammonium indium di(hydrogenmonophosphate), (NH4)In[PO3(OH)]2 |
| 001D95 |
| Crystal structure of ammonium indium (monophosphate-hydrogenmonoborate-monophosphate), (NH4)In[BP2O8(OH)] |
| 001D96 |
| Colloid chemical approach to nanoelectrode ensembles with highly controllable active area fraction |
| 001D97 |
| Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers |
| 001D99 |
| Analysis of the Al content in semiconductor materials by null ellipsometric spectrometry |
| 001E01 |
| A solvent-reduction and surface-modification technique to morphology control of tetragonal In2S3 nanocrystals |
| 001E02 |
| A novel way to enhance electroluminescence performance based on soluble binary and ternary europium 1,1,1-trifluoroacetylacetonate complexes |
| 001E03 |
| A novel terbium (III) beta-diketonate complex as thin film for optical device application |
| 001E05 |
| A novel line-order of InAs quantum dots on GaAs |
| 001E06 |
| A novel in situ oxidization-sulfidation growth route via self-purification process to β-In2S3 dendrites |
| 001E10 |
| A new method to fabricate InGaN quantum dots by metalorganic chemical vapor deposition |
| 001E12 |
| "Scission-template-transportation" route to controllably synthesize CdIn2S4 nanorods |
| 001E13 |
| Temperature-dependent contactless electroreflectance and photoluminescence study of GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures |
| 001E14 |
| Optical properties of as-grown and annealed InAs(N)/InGaAsP strained multiple quantum wells |
| 001E16 |
| Hybridization of electron, light-hole, and heavy-hole states in InAs/GaSb quantum wells |
| 001E17 |
| Comparison of InAs/GaAs Quantum Dot Infrared Photodetector and GaAs/(AlGa)As Superlattice Infrared Photodetector |
| 001E18 |
| Deep Hole Traps Created by Gamma-Ray Irradiation of GaInP |
| 001E19 |
| Correlation of Photoreflectance Spectra with Performance of GaInP/GaAs Heterojunction Bipolar Transistors |
| 001E20 |
| Comparison of InGaP/InGaAs/GaAs and InGaP/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistors |
| 001E21 |
| Phonon-induced photoconductive response in doped semiconductors |
| 001E23 |
| Polarized-photoreflectance characterization of an InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor structure |
| 001E24 |
| Optimum Treatment for Improvement of Indium-Halo Structure for Sub-0.1 μm n-Type Metal-Oxide-Semiconductor Field-Effect Transistor |
| 001E25 |
| Bistable characteristic and current jumps in field electron emission of nanocrystalline diamond films |
| 001E26 |
| Tunnel-regenerated multiple-active-region light-emitting diodes with high efficiency |
| 001E27 |
| Low-resistance and high-transparency Ni/indium tin oxide ohmic contacts to p-type GaN |
| 001E28 |
| Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys |
| 001E29 |
| Subband electron properties of highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates |
| 001E30 |
| Charging of embedded InAs self-assembled quantum dots by space-charge techniques |
| 001E31 |
| Photoluminescence and Electroluminescence Characteristics of New Disubstituted Polyacetylenes |
| 001E32 |
| Influence of Barrier Growth Temperature on the Properties of InGaN/GaN Quantum Well |
| 001E33 |
| Gamma-Ray Induced Deep Electron Traps in GaInP |
| 001E34 |
| Vibrational and photoemission study of the interface between phenyl diamine and indium tin oxide |
| 001E35 |
| Surface analysis of (NH4)2Sx-treated InGaN using x-ray photoelectron spectroscopy |
| 001E36 |
| Enhanced luminance of ZnGa2O4 phosphor by In2O3 doping |
| 001E37 |
| Longitudinal optic phonon-plasmon coupling in δ-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates |
| 001E38 |
| Thermal redistribution of photocarriers between bimodal quantum dots |
| 001E39 |
| Thermal-Treatment Induced Deep Electron Traps in AlInP |
| 001E40 |
| Phases of the Initialized AgInSbTe Phase Change Optical Recording Films |
| 001E41 |
| Improved n+-GaAs/p+-In0.49Ga0.51P/n-GaAs camel-like gate structure for high-breakdown, low-leakage, and high-temperature applications |
| 001E42 |
| Random telegraph noise in the photoluminescence of individual GaxIn1-xAs quantum dots in GaAs |
| 001E43 |
| High-Power 1.5 μm InGaAsP/InP Strained Quantum Wells Integrated Superluminescent Light Source with Tilted Structure |
| 001E44 |
| Direct-Gap Reduction and Valence-Band Splitting of Ordered Indirect-Gap AlInP2 Studied by Polarized Piezoreflectance |
| 001E45 |
| Etching trenches to effectively create electron quantum wires for single-electron-transistor applications |
| 001E46 |
| Temperature dependence of the radiative recombination zone in InGaN/GaN multiple quantum well light-emitting diodes |
| 001E47 |
| Nuclear spectroscopy by means of (p,α) reactions on magic and near magic nuclei: 122Sn(p,α)119In |
| 001E48 |
| Investigation of indium tin oxide/zinc oxide multilayer ohmic contacts to n-type GaN isotype conjunction |
| 001E49 |
| Effect of thermal annealing on high indium content InGaN/GaN single quantum well structures |
| 001E50 |
| Crystallization of Ag-In-Sb-Te Phase-Change Optical Recording Films |
| 001E52 |
| Comparison of optical transitions in InGaN quantum well structures and microdisks |
| 001E53 |
| High-performance InAs/GaAs quantum-dot infrared photodetectors with a single-sided Al0.3Ga0.7As blocking layer |
| 001E54 |
| GaN and InGaN Metal-Semiconductor-Metal Photodetectors with Different Schottky Contact Metals |
| 001E55 |
| Near-room-temperature operation of an InAs/GaAs quantum-dot infrared photodetector |
| 001E56 |
| Temperature-dependent electroluminescence in poly [2-methoxy-5(2′-ethylhexyloxy)-p-phenylenevinylene] light-emitting diode |
| 001E57 |
| Nanoscale surface electrical properties of indium-tin-oxide films for organic light emitting diodes investigated by conducting atomic force microscopy |
| 001E58 |
| Evolution of island-pit surface morphologies of InAs epilayers grown on GaAs (001) substrates |
| 001E59 |
| Electroluminescence at silicon band gap energy from mechanically pressed indium-tin-oxide/Si contact |
| 001E60 |
| Quantum-confined Stark shift in electroreflectance of InAs/InxGa1-xAs self-assembled quantum dots |
| 001E61 |
| Erasing and Jitter Variation Mechanisms of Ag-In-Sb-Te Compact Disk-Rewritable at Double and Quadruple Compact Disk Velocities |
| 001E62 |
| Threshold characteristics of 1.55-μm InGaAs/InGaAsP strain-compensated quantum well lasers with zero net strain |
| 001E63 |
| Microtwin formation mechanism in GaP/AlGaInP/GaAs double heterostructure light-emitting diodes |
| 001E64 |
| Coherent optical control of acoustic phonon oscillations in InGaN/GaN multiple quantum wells |
| 001E65 |
| Temperature invariant lasing and gain spectra in self-assembled GaInAs quantum wire Fabry-Perot lasers |
| 001E66 |
| Thin-Filmed Riboflavin Devices and Their Applications in the Photodegradation of Chlorinated Organics |
| 001E67 |
| Surface Passivation Using P2S5/(NH4)2Sx and Hydrogen Fluoride Solutions on Ag/n-InAs and Ag/n-InSb Schottky Diodes |
| 001E68 |
| Phosphorus-Species-Induced Band-Gap Anomaly in InGaP Grown by Solid-Source Molecular-Beam Epitaxy |
| 001E69 |
| Piezoelectric-field-enhanced lateral ambipolar diffusion coefficient in InGaN/GaN multiple quantum wells |
| 001E70 |
| Characteristics of monolithically integrated two-wavelength laser diodes with aluminum-free active layers |
| 001E71 |
| Persistent photoconductivity in InGaN/GaN multiquantum wells |
| 001E72 |
| Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells |
| 001E73 |
| The Effects of Super-Steep-Retrograde Indium Channel Profile on Deep Submicron n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor |
| 001E74 |
| Temperature Dependence of Gate Current and Breakdown Behaviors in an n+-GaAs/p+-InGaP/n--GaAs High-Barrier Gate Field-Effect Transistor |
| 001E75 |
| An Improved In0.34Al0.66As0.85Sb0.15/InP Heterostructure Utilizing Coupled δ-Doping InP Channel |
| 001E76 |
| Visible and band edge electroluminescence from indium tin oxide/SiO2/Si metal-oxide-semiconductor structures |
| 001E77 |
| Nanoscale optical imaging on an electroluminescent polymer by conducting atomic force microscopy |
| 001E78 |
| Growth of InAsN/InGaAs(P) quantum wells on InP by gas source molecular beam epitaxy |
| 001E83 |
| The photoluminescence characteristics of ZnS nanocrystal doped with M3+(M = In, Ga, Al) |
| 001E86 |
| The Sn-In-Zn system: application of CALPHAD technique to phase diagram mesurement |
| 001E87 |
| Temperature and injection current dependencies of 2 μm InGaAsSb/AlGaAsSb multiple quantum-well ridge-waveguide lasers |
| 001E89 |
| Synthesis and characterization of ternary CuInS2 nanorods via a hydrothermal route |
| 001E90 |
| Synthesis and characterization of poly(3-alkylthiophene)s for light-emitting diodes |
| 001E91 |
| Synthesis and characterization of nonlinear optical side-chain polyimides containing the benzothiazole chromophores |
| 001E92 |
| Synthesis and characterization of new poly(cyanoterephthalylidene)s for light-emitting diodes |
| 001E94 |
| Surface photovoltage spectra and photoelectrochemical properties of semiconductor-sensitized nanostructured TiO2 electrodes |
| 001E96 |
| Surface corrugation of In0.15Ga0.85As layers grown on (5 5 3) b-oriented GaAs substrates by molecular beam epitaxy |
| 001E97 |
| Surface and interface analysis of tris-(8-hydroxyquinoline) aluminum and indium-tin-oxide using atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) |
| 001E98 |
| Studying the mechanism of ordered growth of InAs quantum dots on GaAs/InP |
| 001F00 |
| Study of indium tin oxide thin film for separative extended gate ISFET |
| 001F01 |
| Studies on incorporation of As2 and As4 in III-V compound semiconductors with two group V elements grown by molecular beam epitaxy |
| 001F02 |
| Structural anisotropy and optical properties of InxGa1-xAs quantum dots on GaAs(001) |
| 001F03 |
| Structural and optical characterization of nanocrystals of the InAs-InP system embedded in amorphous SiO2 thin films |
| 001F04 |
| Structural and electrochemical characterization of open-structured' ITO films |
| 001F05 |
| Size dependence of non-linear optical properties of SiO2 thin films containing InP nanocrystals |
| 001F06 |
| Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer |
| 001F07 |
| Self-assembled quantum dots, wires and quantum-dot lasers |
| 001F09 |
| Quasi RT-CW operation of InGaAs/InGaAsP strained quantum well lasers |
| 001F10 |
| Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy |
| 001F12 |
| Preparation and optical properties of InAs0.4P0.6 nanocrystal alloy embedded in SiO2 thin films |
| 001F14 |
| Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer |
| 001F16 |
| Photoelectric conversion properties of bilayer lipid membranes self-assembled on an ITO substrate |
| 001F19 |
| Organic negative-resistance devices using PPV containing electron-transporting groups on the main chain |
| 001F20 |
| Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures |
| 001F21 |
| Optical properties of InGaAs quantum dots formed on InAlAs wetting layer |
| 001F22 |
| Multiple quantum wells and laser structures containing InAs quantum dots grown by molecular-beam epitaxy |
| 001F23 |
| Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0≤x≤0.3) layer |
| 001F26 |
| Melting, superheating and freezing behaviour of indium interpreted using a nucleation-and-growth model |
| 001F27 |
| MBE grown 2.0 μm InGaAsSb/AlGaAsSb MQW ridge waveguide laser diodes |
| 001F29 |
| Internal stress and adhesive strength of reactive magnetron sputtered indium tin oxide films on acrylics |
| 001F31 |
| Influence of growth conditions on self-assembled InAs nanostructures grown on (001)InP substrate by molecular beam epitaxy |
| 001F32 |
| Indium doping effect on GaN in the initial growth stage |
| 001F33 |
| InGaAs/InGaAsP microdisk lasers grown by GSMBE |
| 001F34 |
| InAs self-assembled quantum dots on GaAs/InP by low-pressure metal-organic chemical vapour deposition |
| 001F38 |
| Hydrothermal synthesis and crystal structure of Na2In2[PO3(OH)]4.H2O with a new structure type |
| 001F39 |
| Hydrogen neutralization effect in bulk N-type LEC InP materials |
| 001F42 |
| High-power, low-beam-divergence 980 nm laser arrays with nonabsorbing facets |
| 001F45 |
| Growth of Bi3-2xCa2xFe5-x-yInyVxO12 crystals by top seed solution growth (TSSG) technique |
| 001F47 |
| Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy |
| 001F49 |
| Fabrication and optical absorption of ordered indium oxide nanowire arrays embedded in anodic alumina membranes |
| 001F50 |
| Experimental investigation of photoluminescence dynamics of cavity polaritons under nonresonant excitation |
| 001F51 |
| Enhancement of second harmonic generation and photocurrent generation of a novel stilbazolium dye dimer in Langmuir-Blodgett monolayer films |
| 001F53 |
| Electrolyte electroreflectance spectroscopy studies on the interfacial behavior of the near-surface In0.15Ga0.85As/GaAs quantum well electrode|non-aqueous electrolyte |
| 001F55 |
| Electrochromic properties of polypyrrole composite films in solid polymer electrolyte |
| 001F57 |
| Effects of plasma treatment on the electrical and optical properties of indium tin oxide films fabricated by r.f. reactive sputtering |
| 001F58 |
| Effect of pH on the electrochemical deposition of cadmium selenide nanocrystal films |
| 001F59 |
| Effect of InxGa1-xAs (0≤x≤0.4) capping layer on self-assembled 1.3 μm wavelength InAs/GaAs quantum islands |
| 001F60 |
| Dynamic SIMS characterization of interface structure of Ag/Alq3/NPB/ITO model devices |
| 001F61 |
| Detection of efficient carrier capture in ultrathin InAs/GaAs layers using a degenerate pump-probe technique |
| 001F63 |
| Demonstrations for optical beam qualities of quantum well lasers |
| 001F64 |
| Damage profiles and damage annealing behavior in Al0.168Ga0.348In0.484P/GaAs implanted with 200 keV Zn+ ions |
| 001F65 |
| Coarsening mode and microstructure evolution of Al-In hypermonotectic alloy during rapidly cooling process |
| 001F66 |
| Characteristics of strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE |
| 001F70 |
| Angular-dependent photoemission studies of indium tin oxide surfaces |
| 001F71 |
| Angle dependent X-ray photoemission study on UV-ozone treatments of indium tin oxide |
| 001F73 |
| Analysis of room temperature PL spectra of InAs/GaAs/InP and InAs/InP self-assembled QDs : A five-band study |
| 001F74 |
| An effective way to detect the secondary phase in Sr-doped LaInO3 |
| 001F78 |
| A novel DNA-modified indium tin oxide electrode |
| 001F79 |
| A new transparent conductive thin film In2O3:Mo |
| 001F81 |
| A mild solvothermal route to chalcopyrite quaternary semiconductor CuIn(SexS1-x)2 nanocrystallites |
| 001F82 |
| A comparative study on the electroluminescence properties of some terbium β-diketonate complexes |
| 001F84 |
| Efficient red electroluminescence from devices having multilayers of a europium complex |
| 001F85 |
| Influence of dual incorporation of In and N on the luminescence of GaInNAs/GaAs single quantum wells |
| 001F86 |
| Stimulated-emission spectra of high-indium-content InGaN/GaN multiple-quantum-well structures |
| 001F87 |
| Jitter Raising Mechanisms for Compact Disk (CD)-Rewritable at Quadruple CD Velocity |
| 001F88 |
| Electron distribution and level occupation in an ensemble of InxGa1-xAs/GaAs self-assembled quantum dots |
| 001F90 |
| Red Electroluminescence from an Organic Europium Complex with a Triphenylphosphine Oxide Ligand |
| 001F91 |
| Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells |
| 001F92 |
| Carrier distribution and relaxation-induced defects of InAs/GaAs quantum dots |
| 001F93 |
| Study of current leakage in InAs p-i-n photodetectors |
| 001F94 |
| Investigation of mesa-sidewall effects on direct current and radio frequency characteristics of Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In0.49P pseudomorphic high electron mobility transistors |
| 001F95 |
| Mechanism for photoluminescence in an InyAs1-yN/InxGa1-xAs single quantum well |
| 001F96 |
| High-Temperature Breakdown Characteristics of δ-Doped In0.49Ga0.51P/GaAs/In0.25Ga0.75As/AlGaAs High Electron Mobility Transistor |
| 001F97 |
| X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices |
| 001F98 |
| InP (110) by Time-resolved XPS |
| 001F99 |
| Detection of terahertz radiation from longitudinal optical phonon-plasmon coupling modes in InSb film using an ultrabroadband photoconductive antenna |
| 002000 |
| Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots |
| 002001 |
| Influence of InxGa1-xAs (0≤x≤0.3) Cap Layer on Structural and Optical Properties of Self-assembled InAs/GaAs Quantum Dots |
| 002002 |
| Ellipsometric Study of the Optical Properties of InGaAsN Layers |
| 002003 |
| Electron saturation velocity of GaInP deduced in a GaInP/GaAs/GaInP double heterojunction bipolar transistor |
| 002004 |
| Dipyrazolopyridine derivatives as bright blue electroluminescent materials |
| 002005 |
| Anomalous Phosphorus Cracker Temperature-Dependent Photoluminescence Spectra of InGaP Grown by Solid Source Molecular Beam Epitaxy |
| 002006 |
| Room temperature polarized photoreflectance characterization of GaAlAs/InGaAs/GaAs high electron mobility transistor structures including the influence of strain relaxation |
| 002007 |
| Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy |
| 002008 |
| Photoelectrochemical etching of InxGa1-xN |
| 002009 |
| Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells |
| 002010 |
| Mechanism of luminescence in InGaN/GaN multiple quantum wells |
| 002011 |
| Phosphorus Vacancy as a Deep Level in AlInP Layers |
| 002012 |
| Magneto-Photoluminescence Study of InGaAs/GaAs Quantum Wells and Quantum Dots Grown on (111)B GaAs Substrate |
| 002013 |
| Tuning of conduction intersublevel absorption wavelengths in (In,Ga)As/GaAs quantum-dot nanostructures |
| 002014 |
| Effect of growth temperature on the electric properties of In0.12Ga0.88As/GaAs p-i-n multiple-quantum-well diodes |
| 002016 |
| Time-resolved photoluminescence study of isoelectronic In-doped GaN films grown by metalorganic vapor-phase epitaxy |
| 002017 |
| In0.34Al0.66As0.85Sb0.15/δ(n+)-InP heterostructure field-effect transistors |
| 002018 |
| 1.54 μm infrared photoluminescence and electroluminescence from an erbium organic compound |
| 002019 |
| Ga0.5In0.5P Barrier Layer for Wet Oxidation of AlAs |
| 002020 |
| Modification of the hole injection barrier in organic light-emitting devices studied by ultraviolet photoelectron spectroscopy |
| 002021 |
| Passivation mechanism analysis of sulfur-passivated InGaP surfaces using x-ray photoelectron spectroscopy |
| 002022 |
| Electrical resistivity of molten indium-antimony alloys |
| 002023 |
| Atomic structure of the Si(112)7×1-In surface |
| 002024 |
| Erasing Mechanisms of Ag-In-Sb-Te Compact Disk (CD)-Rewritable |
| 002025 |
| Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures |
| 002026 |
| Strain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wire |
| 002027 |
| Spin splitting in pseudomorphic InxGa1-xAs/InyAl1-yAs graded heterostructures |
| 002028 |
| Electron transport in the AlGaAs/InGaAs double-heterostructure pseudomorphic high-electron-mobility transistor |
| 002029 |
| Voltage and frequency dependence of differential capacitance in relaxed In0.2Ga0.8As/GaAs schottky diodes |
| 002030 |
| Improved time-of-flight technique for measuring carrier mobility in thin films of organic electroluminescent materials |
| 002031 |
| Characteristics of InGaP/GaAs delta-doped heterojunction bipolar transistor |
| 002032 |
| Accurate determination of quasi-Fermi-level separation of semiconductor lasers |
| 002033 |
| Accurate determination of quasi-Fermi-level separation of semiconductor lasers |
| 002034 |
| Wide angle distributed Bragg reflectors for 590 nm amber AlGaInP light-emitting diodes |
| 002035 |
| Experimental determination of local Strain effect on InAs/GaAs self-organized quantum dots |
| 002036 |
| Electrical characterization of isoelectronic In-doping effects in GaN films grown by metalorganic vapor phase epitaxy |
| 002037 |
| Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing |
| 002038 |
| Strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures by x-ray diffraction and photoluminescence |
| 002039 |
| Carrier depletion by defects levels in relaxed In0.2Ga0.8As/GaAs quantum-well Schottky diodes |
| 002040 |
| Stimulated emission study of InGaN/GaN multiple quantum well structures |
| 002041 |
| Coherent Acoustic Phonon Oscillations in Semiconductor Multiple Quantum Wells with Piezoelectric Fields |
| 002042 |
| Frequency response of microwave dielectric Bi2(Zn1/3Nb2/3)2O7 thin films laser deposited on indium-tin oxide coated glass |
| 002043 |
| Abnormal temperature dependence of band-gap energies observed in (InAs)/(GaAs) and (InP)/(GaP) superlattices with strong lateral composition modulation |
| 002044 |
| X-ray photoelectron and Raman spectroscopy of nanocrystalline Ga0.62In0.38Sb-SiO2 composite films |
| 002047 |
| Two-step method to grow InAs epilayer on GaAs substrate using a new prelayer |
| 002048 |
| Two-dimensional ordering of self-assembled InAs quantum dots grown on (3 1 1)B InP substrate |
| 002051 |
| Tunable bandwidth and wavelength liquid crystal optical filter |
| 002052 |
| Time-resolved measurement of surface band bending of cleaved GaAs(110) and InP(110) by high resolution XPS |
| 002053 |
| The structural and photoluminescence properties of self-organized quantum dots in InAs/In0.53 Ga0.47 As multilayer on InP substrate |
| 002054 |
| The photoelectrochemical study of a series of ionically combined bischromophore transition metal complexes in LB films |
| 002055 |
| The effect of substrate orientation on the morphology of InAs nanostructures on (0 0 1) and (1 1 n)A/B (n = 1-5) InP substrates |
| 002056 |
| The effect of functional group substitution on the photoluminescence and electroluminescence of pyrazoline derivatives |
| 002057 |
| Temperature dependence of the optical properties of InAs/GaAs self-organized quantum dots with bimodal size distribution |
| 002058 |
| Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots |
| 002059 |
| Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers |
| 002060 |
| Synchrotron radiation photoelectron spectroscopy study of ITO surface |
| 002061 |
| Surface renewable graphite organosilicate composite electrode containing indium(III) hexacyanoferrate(II/III) |
| 002062 |
| Study of AlGaAsSb/InGaAsSb strained quantum well grown by molecular beam epitaxy on GaSb(100) |
| 002063 |
| Structural and optical characterization of InAs nanostructures grown on (001) and high index InP substrates |
| 002064 |
| Strong temperature dependence of photoluminescence properties in visible InAlAs quantum dots |
| 002065 |
| Strain-compensated quantum cascade lasers operating at room temperature |
| 002066 |
| Sr-doped LaInO3 and its possible application in a single layer SOFC |
| 002067 |
| Self-ordering of quasi-quantum wire in InAlAs/AlGaAs multilayer nanostructure and its optical anisotropy |
| 002068 |
| Self-assembled InAs quantum wires on InP(001) |
| 002069 |
| Second harmonic generation investigation of indium tin oxide thin films |
| 002070 |
| Room temperature 1.55 μm emission from InAs quantum dots grown on (001)InP substrate by molecular beam epitaxy |
| 002072 |
| Relaxation mechanism of GaP/InGaAlP/GaAs heterostructure |
| 002075 |
| Pressure behaviour of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots with multi-modal distribution in size |
| 002076 |
| Preparation and optical properties of SiO2 thin films containing InP nanocrystals |
| 002077 |
| Preparation and characterization of indium films by electroless plating under hydrothermal conditions |
| 002079 |
| Photosensitization of ITO and nanocrystalline TiO2 electrode with a hemicyanine derivative |
| 002080 |
| Photorefractive light-induced scattering in doped lithium niobate crystals |
| 002081 |
| Photoluminescence in Si and Be directly doped self-organized InAs/GaAs quantum dots |
| 002082 |
| Photoelectrochemical response of Langmuir-Blodgett monolayer films containing donor-π-acceptor azomethine dyes |
| 002083 |
| Photoelectrochemical behavior of a novel composite In0.15Ga0.85As/GaAs ]GaAs/Al0.3Ga0.7As multiple quantum well electrode |
| 002085 |
| Organic light-emitting diodes with AZO films as electrodes |
| 002087 |
| Native oxided AlAs current blocking layer for AlGaInP high brightness light emitting diodes |
| 002088 |
| Monochromatic-red-light emission of novel copolymers containing carbazole units and europium-acrylate complexes |
| 002090 |
| Lithiation and electrochromic characteristics of composite Ta2O5-TiO2 films fabricated by ultraviolet reactive laser ablation |
| 002092 |
| Interfacial structure of nano-granular thin films |
| 002094 |
| InGaAsP/GaAs SCH SQW laser arrays grown by LPE |
| 002095 |
| In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE |
| 002096 |
| ITO films deposited on water-cooled flexible substrate by bias RF Magnetron sputtering |
| 002097 |
| Highly ordered nanostructures of single crystalline GaN nanowires in anodic alumina membranes |
| 002098 |
| High-performance strain-compensated InGaAs/InAlAs quantum cascade lasers |
| 002099 |
| High-field magneto-microwave and millimeterwave conductivities in n-InSb in the presence of a quantizing magnetic field |
| 002100 |
| High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers |
| 002101 |
| H-vacancy complex VInH4 abundance and its influences in n-type LEC InP |
| 002102 |
| Growth exploration of compositionally uniform bulk semiconductors under a high magnetic field of 80 000 Gauss |
| 002103 |
| Growth and characterization of high-quality GaInAs/AlInAs triple wells |
| 002104 |
| Gas source molecular beam epitaxy of InP-based microstructures : material growth, characterization and device applications |
| 002106 |
| Experimental and numerical investigations on dissolution and recrystallization processes of GaSb/InSb/GaSb under microgravity and terrestrial conditions |
| 002109 |
| Electronic characteristics of InAs/GaAs self-assembled quantum dots by deep level transient spectroscopy |
| 002110 |
| Electroluminescent property and charge separation state of bis-naphthalimides |
| 002111 |
| Electrodeposition of carbon films from various organic liquids |
| 002112 |
| Electrochromic properties of aqueous sol-gel derived vanadium oxide films with different thickness |
| 002113 |
| Electrical resistivity and absolute thermopower of liquid GaSb and InSb alloys |
| 002114 |
| Elastic strain in InGaN and AlGaN layers |
| 002115 |
| Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice |
| 002116 |
| Effects of interdiffusion on the luminescence of InAs/GaAs quantum dots covered by InGaAs overgrowth layer |
| 002119 |
| Effect of thin GaAs tensile-strained layer on InAs quantum dots on InP (001) substrate grown by LP-MOVPE |
| 002120 |
| Effect of steric hindrance on photoinduced electron transfer of self-assembled monolayers of three isomeric Ru(II)-bipyridine complexes on ITO electrode |
| 002121 |
| Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes |
| 002122 |
| Effect of rapid thermal annealing on InGaAs/GaAs quantum wells |
| 002124 |
| Effect of MCl2 (M = Hg, Zn, Cu) subphase on photoinduced electron transfer in a pyrazinium styryl dye Langmuir-Blodgett film |
| 002125 |
| Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots |
| 002126 |
| Die bonding with Au/In isothermal solidification technique |
| 002129 |
| Czochralski growth and optical spectral properties of GInGG : Cr3+ single crystal |
| 002130 |
| Cross-sectional high-resolution transmission electron microscopy of the microstructure of electrochromic nickel oxide |
| 002131 |
| Comparison study of ITO thin films deposited onto different substrates at room temperature |
| 002133 |
| Catalytic methane sensor using a Ni-CaZr0.9In0.1O3-α Cermet electrode |
| 002134 |
| Carrier mobility distribution in annealed undoped LEC InP material |
| 002135 |
| Carrier capture into InAs/GaAs quantum dots detected by a simple degenerate pump-probe technique |
| 002136 |
| Bias voltage dependence of properties for depositing transparent conducting ITO films on flexible substrate |
| 002137 |
| Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy |
| 002138 |
| Anisotropic radiation pattern from InGaAlP quantum well mesa-like microdisks |
| 002139 |
| An investigation of the optical spectra and EPR parameters of vanadium in III-V semiconductors (GaAs, GaP, InP) |
| 002145 |
| A study on band-gap tailoring for InP based QW structure by ion implantation and plasma enhanced chemical vapor deposition |
| 002146 |
| 1.35 μm photoluminescence from In0.5Ga0.5As/GaAs islands grown by molecular beam epitaxy via cycled (InAs)1/(GaAs)1 monolayer deposition |
| 002147 |
| 1.3 μm integrated superluminescent light source |
| 002148 |
| Electron drift mobility and electroluminescent efficiency of tris(8-hydroxyquinolinolato) aluminum |
| 002149 |
| GaInAsSb/InP heterojunction band offset: Measurement by absorption spectroscopy |
| 002150 |
| Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/InxGa1-xAs/GaAs pseudomorphic transistors |
| 002151 |
| Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/InxGa1-xAs/GaAs pseudomorphic transistors |
| 002152 |
| Barrier height enhancement of Ni/n-type InP Schottky contact using a thin praseodymium interlayer |
| 002153 |
| Barrier height enhancement of Ni/n-type InP Schottky contact using a thin praseodymium interlayer |
| 002154 |
| Barrier height enhancement of Ag/n-GaAs and Ag/n-InP Schottky diodes prepared by P2S5/(NH4)2Sx and HF treatments |
| 002155 |
| High-speed and high-power 1.3 μm InGaAsP/InP selective proton-bombarded buried crescent lasers with optical field attenuation regions |
| 002156 |
| Low-leakage current and high-breakdown voltage GaAs-based heterostructure field-effect transistor with In0.5(Al0.66Ga0.34)0.5P Schottky layer |
| 002157 |
| Positive and negative persistent photoconductivity in a two-side-doped In0.53Ga0.47As/In0.52Al0.48As quantum well |
| 002158 |
| AlGaInP light-emitting diodes with mirror substrates fabricated by wafer bonding |
| 002159 |
| Persistent photoconductivity in InGaP/GaAs heterostructures |
| 002160 |
| Arsenic clusters on the surface of vertically aligned InAs islands on GaAs substrate by annealing |
| 002161 |
| Strain effect on the band structure of InAs/GaAs quantum dots |
| 002162 |
| Influence of growth temperature of InAsP/InP strained multiple quantum wells grown by metalorganic chemical vapor deposition |
| 002163 |
| Application of an AlGaAs/GaAs/InGaAs heterostructure emitter for a resonant-tunneling transistor |
| 002164 |
| Observation of carrier depletion and emission effects on capacitance dispersion in relaxed In0.2Ga0.8As/GaAs quantum wells |
| 002165 |
| Band gap state formation in InP (110) induced by 10 and 100 eV argon ion bombardment |
| 002166 |
| Investigation of low-temperature deposition of silicon dioxide on indium phosphide by liquid phase deposition |
| 002167 |
| Positive and negative persistent photoconductivities in semimetallic AlxGa1-xSb/InAs quantum wells |
| 002169 |
| High breakdown voltage symmetric double δ-doped In0.49Ga0.51P/In0.25Ga0.75As/GaAs high electron mobility transistor |
| 002170 |
| Growth and postgrowth rapid thermal annealing of InAsN/InGaAs single quantum well on InP grown by gas source molecular beam epitaxy |
| 002171 |
| Large coherent acoustic-phonon oscillation observed in InGaN/GaN multiple-quantum wells |
| 002172 |
| Organometallic vapor phase epitaxy growth and optical characteristics of almost 1.2 μm GaInNAs three-quantum-well laser diodes |
| 002173 |
| Observation of abnormal capacitance-frequency behavior in In0.12Ga0.88As/GaAs p-i-n superlattice grown at low temperature |
| 002174 |
| A dopant-related defect in Te-doped AlInP |
| 002175 |
| Determination of surface state density for GaAs and InAlAs by room temperature photoreflectance |
| 002177 |
| Applications of an In0.53Ga0.25Al0.22As/InP continuous-conduction-band structure for ultralow current operation transistors |
| 002178 |
| Electron-filling modulation reflectance in charged self-assembled InxGa1-xAs quantum dots |
| 002179 |
| Measurement of AlInAsSb/GaInAsSb heterojunction band offset by photoluminescence spectroscopy |
| 002180 |
| AlGaInP/AuBe/glass light-emitting diodes fabricated by wafer bonding technology |
| 002181 |
| Observation of the impulse-like negative-differential resistance of superlatticed resonant-tunneling transistor |
| 002182 |
| Superlatticed negative differential-resistance heterojunction bipolar transistor |
| 002183 |
| Mg-related deep levels in AlInP |
| 002184 |
| Light-induced negative differential resistance in planar InP/InGaAs/InP double-heterojunction p-i-n photodiode |
| 002185 |
| Room-temperature photoreflectance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles |
| 002186 |
| 1/f noise measurements on indium antimonide metal-oxide-semiconductor field-effect transistors |
| 002187 |
| High conduction-band offset of AlInAsSb/InGaAs multiple quantum wells grown by metalorganic vapor phase epitaxy |
| 002189 |
| Heteroepitaxy of germanium on Si(103) and stable surfaces of germanium |
| 002190 |
| Optical characterization of visible multiquantum-well semiconductor lasers by collection/excitation modes of scanning near-field optical microscopy |
| 002191 |
| Effect of threading dislocations on electron transport in In0.24Ga0.76N/GaN multiple quantum wells |
| 002192 |
| Application of selective removal of mesa sidewalls for high-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic transistors |
| 002193 |
| Application of a new airbridge-gate structure for high-performance Ga0.51In0.49P/In0.15Ga0.85As/GaAs pseudomorphic field-effect transistors |
| 002194 |
| The optical and electrical studies of hydrogen passivation in GaInP/GaAs heterostructures |
| 002195 |
| Transition of carrier distribution from a strained to relaxed state in InGaAs/GaAs quantum well |
| 002196 |
| Growth and characterization of high-quality InAs0.86Sb0.05P0.09 alloy by liquid-phase epitaxy |
| 002197 |
| Ga0.51In0.49P/InxGa1-xAs/GaAs lattice-matched and strained doped-channel field-effect transistors grown by gas source molecular beam epitaxy |
| 002198 |
| Piezoelectric effects in the optical properties of strained InGaN quantum wells |
| 002199 |
| Bright-blue electroluminescence from a silyl-substituted ter-(phenylene-vinylene) derivative |
| 002200 |
| Determination of the valence-band offset for GaInAsSb/InP heterostructure |
| 002201 |
| Influence of sapphire nitridation on properties of indium nitride prepared by metalorganic vapor phase epitaxy |
| 002202 |
| Enhanced hole injection in a bilayer vacuum-deposited organic light-emitting device using a p-type doped silicon anode |
| 002203 |
| Persistent photoconductivity in semimetallic AlxGa1-xSb/InAs quantum wells |
| 002204 |
| Majority- and minority-carrier traps in Te-doped AlInP |
| 002205 |
| Structure and photoluminescence of InGaAs self-assembled quantum dots grown on InP(001) |
| 002206 |
| Room-temperature operation of In0.5Ga0.5As as quantum dot lasers grown on misoriented GaAs substrates by molecular beam epitaxy |
| 002207 |
| Reduction of spontaneous surface segregation in (InP)2/(GaP)2 quantum wells grown on tilted substrates |
| 002208 |
| Photoluminescence study of high-quality InGaAs/GaAs quantum dots on (111)B GaAs substrates |
| 002209 |
| Photoluminescence characteristics of self-assembled In0.5Ga0.5As quantum dots on vicinal GaAs substrates |
| 002210 |
| Excitation density and temperature dependent photoluminescence of InGaAs self-assembled quantum dots |
| 002211 |
| Wavelength tuning in GaAs/AlGaAs quantum wells by InAs submonolayer insertion |
| 002212 |
| Vacancies and negative ions in as-grown and ion-bombarded p-InP(Zn) observed by positron annihilation |
| 002213 |
| Using the tensile stress field to control quantum dot arrangements |
| 002214 |
| Uniformity enhancement of the self-organized InAs quantum dots |
| 002215 |
| Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(3 1 1)B surfaces |
| 002216 |
| Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(3 1 1)B surfaces |
| 002217 |
| Transparent conducting CeO2-SiO2 thin films |
| 002220 |
| The electrochemical copolymerization of pyrrole and furan in a novel binary solvent system |
| 002223 |
| The catalytic effect of SmInO3 on the gas-sensing properties of CdIn2O4 |
| 002224 |
| The analysis of the performance for P-p-n and N-n-p hetero- and homojunction GaSb/Ga0.8In0.2As0.19Sb0.81 photodetectors |
| 002225 |
| Temperature and time dependence of the density of molten indium antimonide measured by an improved Archimedean method |
| 002227 |
| Synthesis and structure of indium oxide nanoparticles dispersed within pores of mesoporous silica |
| 002228 |
| Substrate surface atomic structure influence on the growth of InAlAs quantum dots |
| 002229 |
| Study of overgrowth heterostructure InSb/GaAs by scanning electron acoustic microscopy |
| 002230 |
| Studies of the photocurrent generation performances from a series of amphiphilic his-chromophore zinc complexes and correlation between photocurrent generation performance and molecular structure |
| 002232 |
| Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures |
| 002233 |
| Structural and optical characterization of InAs nanostructures grown on high-index InP substrates |
| 002234 |
| Structural and optical characteristics of self-organized InAs quantum dots grown on GaAs (3 1 1)A substrates |
| 002235 |
| Structural and infrared absorption properties of self-organized InGaAs/GaAs quantum dots multilayers : Special issue papers on quantum dots |
| 002236 |
| Spectrally-narrow blue light-emitting organic electroluminescent devices utilizing thulium complexes |
| 002238 |
| Size quantization effects in InAs self-assembled islands on InP(0 0 1) at the onset of 2D-to-3D transition |
| 002239 |
| Si doping effect on self-organized InAs/GaAs quantum dots |
| 002240 |
| Self-organization of wire-like InAs nanostructures on InP |
| 002241 |
| Self-organization of the InGaAs/GaAs quantum dots superlattice |
| 002242 |
| Self-assembled InAs and In0.9Al0.1As quantum dots on (0 0 1)InP substrates grown by molecular beam epitaxy (MBE) |
| 002243 |
| Room temperature continuous wave visible vertical cavity surface emitting laser |
| 002245 |
| RHEED characterization of InAs/GaAs grown by MBE |
| 002247 |
| Properties of a new pyrazoline derivative and its application in electroluminescence |
| 002248 |
| Preparation and gas-sensing properties of NANO-CdIn2O4 material |
| 002249 |
| Preparation and characterization of ITO films deposited on polyimide by reactive evaporation at low temperature |
| 002251 |
| Photovoltaic spectroscopy studies of strained InGaAs/GaAs quantum wells |
| 002253 |
| Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001) : Special issue papers on quantum dots |
| 002254 |
| Photoelectrochemical properties of Langmuir-Blodgett films of two squaraine derivatives |
| 002255 |
| Photoelectric conversion property of monolayer films of fullerene tetracarboxylic acid derivatives |
| 002256 |
| Organothermal synthesis and characterization of nanocrystalline β-indium sulfide |
| 002257 |
| Optical properties of CuInSe2 film semiconductor studied with potothermal deflection spectroscopy |
| 002258 |
| Nonlinear optical absorption of InAs nanocrystals embedded in SiO2 thin films |
| 002259 |
| New insight into the origin of twin and grain boundary in InP |
| 002260 |
| Nanosecond laser annealing of zinc-doped indium phosphide |
| 002261 |
| Measurement of diffusivity in molten films by a masking film method |
| 002262 |
| Liquid phase epitaxial growth of AlGaInPAs on GaAs substrates |
| 002263 |
| Lead free solder materials In-Sn-Zn system |
| 002264 |
| Langmuir-Blodgett films and electroluminescent devices of amphiphilic 8-hydroxyquinoline cadmium |
| 002267 |
| InAs/In0.52Al0.48As quantum wire structure with the specific layer-ordering orientation on InP(0 0 1) |
| 002268 |
| In composition dependence of lateral ordering in InGaAs quantum dots grown on (311)B GaAs substrates |
| 002269 |
| Highly efficient photoinduced electron transfer on a benzothiazolium styryl dye Langmuir-Blodgett monolayer modified-ITO electrode |
| 002271 |
| High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by metal-organic chemical vapor deposition |
| 002272 |
| GSMBE grown infrared quantum cascade laser structures |
| 002273 |
| Fatigue-free Pb(Zr0.52Ti0.48)O3 thin films on indium tin oxide coated substrates by a sol-gel process |
| 002274 |
| Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(100) and high index substrates by molecular beam epitaxy |
| 002275 |
| Fabrication and their photoelectric conversion properties of two kinds of self-assembled monolayers and Langmuir-Blodgett film of mono-substituted C60-malonic acid |
| 002276 |
| Fabrication and characterization of heteropolyanion Langmuir-Blodgett films |
| 002278 |
| Electrochemical and photoelectrochemical properties of ITO/α-Fe2O3 nanoparticulate film electrode in Na2SO4 solution |
| 002279 |
| Electrochemical and electrochromic properties of niobium oxide thin films fabricated by pulsed laser deposition |
| 002280 |
| Electroassisted photocatalytic degradation of surfactants using TiO2/RuS2 coupled semiconductor thin film electrode assembly |
| 002281 |
| Efficient white light-emitting organic/polymeric electroluminescent device |
| 002282 |
| Effects of heat treatment on the microstructure of nanophase indium-tin oxide |
| 002283 |
| Effect of growth interruption on the optical properties of InAs/GaAs quantum dots |
| 002288 |
| Blue organic electroluminescence of 1,3,5-triaryl-2-pyrazoline |
| 002289 |
| A safe low temperature route to InAs nanofibers |
| 002290 |
| A novel photo-switched electrochemical behaviour of a charge-transfer complex containing hemicyanine cation and nickel complex anion in a Langmuir-Blodgett film |
| 002291 |
| A low-temperature route to InP nanocrystals |
| 002292 |
| 31P and 27Al MAS NMR investigations of some lead phosphate glasses |
| 002293 |
| The reduction and enhancement of spontaneous ordering in (InP)2/(GaP)2 quantum wells grown by solid source molecular beam epitaxy |
| 002294 |
| Facet-coating effects on the 1.3-μm strained multiple-quantum-well AlGaInAs/InP laser diodes |
| 002295 |
| Raman scattering of InAs1-x-ySbxPy quaternary alloys |
| 002296 |
| Positron-lifetime study of compensation defects in undoped semi-insulating InP |
| 002297 |
| Raman and x-ray studies of InN films grown by metalorganic vapor phase epitaxy |
| 002298 |
| Photoconductivity in self-organized InAs quantum dots |
| 002299 |
| BCl3/Ar reactive ion etching for gate recessing of GaInP/InGaAs/GaAs pseudomorphic high electron mobility transistors |
| 002300 |
| Operation of a single column focused ion/electron beam system based on a dual ion/electron source |
| 002301 |
| Thermal properties of InAs0.86Sb0.05P0.09 homostructure diodes |
| 002302 |
| Optical and electrical properties of Sn-doped indium oxide films deposited on polyester by reactive evaporation |
| 002303 |
| Saturation spectroscopy and electronic-state lifetimes in a magnetic field in InAs/AlxGa1-xSb single quantum wells |
| 002305 |
| Application of δ-doped wide-gap collector structure for high-breakdown and low-offset voltage transistors |
| 002306 |
| InGaAs/GaAs quantum dots on (111)B GaAs substrates |
| 002307 |
| Raman and X-ray studies of InN films grown at different temperatures by metalorganic vapor phase epitaxy |
| 002308 |
| Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition |
| 002309 |
| Photoreflectance spectroscopy of strained-layer (111)B InGaAs/GaAs quantum well diodes |
| 002311 |
| Reactive ion etching for AlGalnP/GaInP laser structures |
| 002312 |
| Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN |
| 002313 |
| Photoluminescence investigation of GaInP/GaAs multiple quantum wells grown on (001) and (311) B GaAs surfaces by gas source molecular beam epitaxy |
| 002314 |
| BCl3/Ar plasma-induced surface damage in GaInP/InGaAs/GaInP quantum-well high-electron-mobility transistors |
| 002315 |
| High resolution x-ray diffraction study of Bragg peak width in strained InGaAs/InAlAs/InP heterostructures |
| 002316 |
| An elucidation of solid incorporation of InGaN grown by metalorganic vapor phase epitaxy |
| 002317 |
| 650 nm AlGaInP/GaInP compressively strained multi-quantum well light emitting diodes |
| 002318 |
| 0.66 μm InGaP/InGaAlP single quantum well microdisk lasers |
| 002320 |
| Stability improvement of selective oxidation during the fabrication of InGaAs/GaAs vertical cavity surface emitting laser |
| 002321 |
| High-temperature and low-threshold-current operation of 1.5 μm AlGaInAs/InP strain-compensated multiple quantum well laser diodes |
| 002323 |
| Electrical characteristics of heterostructure-emitter bipolar transistors using spacer layers |
| 002324 |
| Suppression of electron and hole leakage in 1.3 μm AlGaInAs/InP quantum well lasers using multiquantum barrier |
| 002325 |
| Ordered InAs quantum dots in InAlAs matrix on (001) InP substrates grown by molecular beam epitaxy |
| 002326 |
| Formation of PIn defect in annealed liquid-encapsulated Czochralski InP |
| 002329 |
| Differential reflection dynamics in InAsxP1-x/InP (x≤0.35) strained-multiple-quantum wells |
| 002330 |
| The directionality of quantum confinement on strain-induced quantum-wire lasers |
| 002331 |
| Analysis of Fermi level pinning and surface state distribution in InAlAs heterostructures |
| 002332 |
| Optical modes within III-nitride multiple quantum well microdisk cavities |
| 002333 |
| Magnetospectroscopy of high-purity InP grown by gas source molecular beam epitaxy |
| 002334 |
| Self-organized InAs/GaAs quantum dots grown by gas source molecular beam epitaxy |
| 002335 |
| Characterization of piezoelectric (111)B InGaAs/GaAs p-i-n quantum well structures using photoreflectance spectroscopy |
| 002336 |
| Studies of two-subband occupied electron gas in modulation-doped In0.52Al0.48As/In0.53Ga0.47As single quantum well by far-infrared modulated photoluminescence |
| 002337 |
| Ordering reduction in In0.5Ga0.5P grown by solid source molecular beam epitaxy |
| 002338 |
| Conduction-band offset in a pseudomorphic GaAs/In0.2Ga0.8As quantum well determined by capacitance-voltage profiling and deep-level transient spectroscopy techniques |
| 002339 |
| Alterable temperature-dependent wavelength shifts in (InP)2/(GaP)2 quantum wells |
| 002340 |
| Stable field-induced electron emission from a solidified liquid metal ion source |
| 002341 |
| Alignment of misfit dislocations in the In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As/InP heterostructure |
| 002342 |
| Effect of interface roughness and well width on differential reflection dynamics in InGaAs/InP quantum wells |
| 002343 |
| Thermal annealing of Pd/InAlAs Schottky contacts for transistor buried-gate technologies |
| 002344 |
| Reactive ion etching of CHF3+BCl3 for ternary InxAl1-xAs and InxGa1-xAs (x=0.18, 0.3, 0.52) compounds using various In contents |
| 002345 |
| Vacancies and impurities in InP studied using positron lifetime and an improved Doppler-broadening spectrometer |
| 002346 |
| Triclinic deformation and anisotropic strain relaxation of an InAs film on a GaAs(0 0 1) substrate measured by a series of symmetric double crystal X-ray diffraction |
| 002347 |
| Threshold reduction in strained-layer InGaAs/GaAs quantum well lasers by liquid phase epitaxy regrowth |
| 002349 |
| Thermal activation and thermal transfer of localized excitons in InAs self-organized quantum dots |
| 002351 |
| The self-organized In0-25Ga0-75As quantum dots grown by migration enhanced epitaxy |
| 002353 |
| The importance of low-temperature deposition of organic emitting layer on electroluminescent device performance |
| 002354 |
| The In-Sn-Zn system |
| 002355 |
| Structure and spectroscopic characterization of polycrystalline vanadyl phthalocyanine (VOPc) films fabricated by vacuum deposition |
| 002356 |
| Steady-state photovoltaic and electroreflective spectra in Al/vanadyl phthalocyanine (VOPc, in phase II) /indium-tin-oxide (ITO) sandwich cell |
| 002357 |
| Spontaneously ordered InAs self-assembled quantum dots grown on GaAs/InP substrate |
| 002359 |
| Single-layer heat mirror films and an improved method for evaluation of its optical and radiative properties in infrared |
| 002360 |
| Rapid thermal annealing characteristics of Be implanted into InSb |
| 002361 |
| Pressure behaviour of photoluminescence from InAs submonolayer in GaAs matrix |
| 002362 |
| Preparation and optical properties of a SiO2 film containing In0.2Ga0.8As nanocrystals by radio-frequency magnetron co-sputtering |
| 002363 |
| Preparation and optical absorption of InSb microcrystallites embedded in SiO2 thin films |
| 002364 |
| Preparation and characterization of indium-doped tin dioxide nanocrystalline powders |
| 002365 |
| Photoluminescence study of InGaAs/InAlAs single and multiple quantum wells |
| 002366 |
| Photoluminescence study of InxGa1-xAs/InyAl1-yAs one-side-modulation-doped asymmetric step quantum wells |
| 002367 |
| Photoluminescence of InAs self-organized quantum dots formation on InP substrate by MOCVD |
| 002368 |
| Photoluminescence from InAs quantum dots on GaAs(100) |
| 002369 |
| Photoexcited carrier diffusion dependence of differential reflection dynamics in InAsxP1-x/InP (x ≤ 0.35) strained-multiple-quantum wells |
| 002370 |
| Photoelectrochemistry of Langmuir-Blodgett films of a C60 iminodiacetic acid ester derivative on ITO electrodes |
| 002371 |
| Photoelectric response of ITO electrode sensitized by single-layer C60-aminodicarboxylate derivative C60(C7H13NO4) |
| 002374 |
| Optical anisotropy of InAs submonolayer quantum wells in a (311)GaAs matrix |
| 002378 |
| Novel In0.49Ga0.51P./(In)GaAs/GaAs p-type modulation doped heterostructure grown by gas source molecular beam epitaxy |
| 002380 |
| Multi-sheets In0.25Ga0.75As quantum dots grown by migration-enhanced epitaxy |
| 002382 |
| Melting and freezing behavior of embedded nanoparticles in ball-milled Al-10 wt% M (M = In, Sn, Bi, Cd, Pb) mixtures |
| 002384 |
| Liquid-phase epitaxial growth of InAsPSb/InAs heterostructure |
| 002385 |
| Liquid phase epitaxy growth of AlxGayIn1-x-yPzAs1-z/GaAs with direct band gap up to 2.0 eV |
| 002387 |
| Langmuir-Blodgett films of poly-N-vinylcarbazole prepared by radical polymerization method |
| 002389 |
| Influences of dopants on the electronic structure of SnO2 thin films |
| 002391 |
| InAs quantum dots in InAlAs matrix on (0 0 1)InP substrates grown by molecular beam epitaxy |
| 002393 |
| Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux |
| 002395 |
| Hydrothermal synthesis and characterization of perovskite-type Ba2SbMO6 (M = In, Y, Nd) oxides |
| 002396 |
| Hydrothermal preparation and characterization of nanocrystalline powder of β-indium sulfide |
| 002402 |
| Growth of InAs nanocrystals embedded in SiO2 films by radio-frequency magnetron cosputtering |
| 002404 |
| Growth and transport properties of InAs thin films on GaAs |
| 002406 |
| Growth and doping characteristics of InGaN films grown by low pressure MOCVD |
| 002408 |
| Growth and characterization of InAs-rich GaInAsSb alloys on GaSb substrates by MOCVD |
| 002410 |
| Evidence of multimodal patterns of self-organized quantum dots |
| 002411 |
| Electroluminescence from triplet metal-ligand charge-transfer excited state of transition metal complexes |
| 002412 |
| Electrochemical fabrication of all organic heterojunction for polythiophene and its derivatives |
| 002413 |
| Effects of growth temperature on highly mismatched InAs grown on GaAs substrates by MBE |
| 002414 |
| Effects of growth interruption on self-assembled InAs/GaAs islands |
| 002423 |
| Auger electron spectroscopy of neutralized (NH4)2S-passivated InP(100) surfaces |
| 002424 |
| Annealing behavior of InAs/GaAs quantum dot structures |
| 002426 |
| Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy |
| 002428 |
| All solid-state electrochromic window of Prussian Blue and electrodeposited WO3 film with PMMA gel electrolyte |
| 002429 |
| Alignment of threading dislocations in the In0.3Ga0.7As/GaAs superlattice |
| 002430 |
| A thermodynamic assessment of the In-As-Sb system |
| 002431 |
| A metal-rich fluorinated indium phosphate, 4[NH3(CH2)3NH3]-3[H3O]-[In9(PO4)6(HPO4)2F16]-3H2O, with 14-membered ring channels |
| 002436 |
| The third subband population in modulation-doped InGaAs/InAlAs heterostructures |
| 002439 |
| Temperature dependence of photoluminescence spectra in InAs/GaAs quantum dot superlattices with large thicknesses |
| 002440 |
| Synthesis, structure, and optical properties of nanometer-sized In2O3 capped by anionic surfactant |
| 002441 |
| Molecular beam epitaxy growth of Iny2Al1-y2As/In0.73Ga0.27As/Iny1Al1-y1As/ InP P-HEMTs with enhancement conductivity using an intentional nonlattice-matched buffer layer |
| 002442 |
| A novel waveguide structure to reduce beam divergence and threshold current in GaInP/AlGaInP visible quantum-well lasers |
| 002443 |
| Enhanced real-space transfer in δ-doped GaAs/In0.1Ga0.9As/In0.25Ga0.75As two-step channel heterojunctions |
| 002444 |
| Characterization of photoluminescence intensity and efficiency of free excitons in semiconductor quantum well structures |
| 002445 |
| Built-in electric field and surface Fermi level in InP surface-intrinsic n+ structures by modulation spectroscopy |
| 002446 |
| Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix |
| 002447 |
| Single-layer organic electroluminescent devices by vapor deposition polymerization |
| 002448 |
| Negative differential resistance in InGaAs/AlAsSb/InGaAs single-barrier heterostructure |
| 002449 |
| Bistable GaAs-InGaP triangular-barrier optoelectronic switch |
| 002450 |
| Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperature |
| 002451 |
| Normal incident long-wavelength quantum well infrared photodetectors using electron intersubband transitions |
| 002452 |
| Long wavelength (1.3 μm) vertical-cavity surface-emitting lasers with a wafer-bonded mirror and an oxygen-implanted confinement region |
| 002453 |
| Defects in metamorphic InxAl1-xAs (x<0.4) epilayers grown on GaAs substrates |
| 002455 |
| Optical and structural characterization of InAs/GaSb superlattices |
| 002456 |
| The calculation and the photoluminescence characterization of energy levels in a strained GaAs/In0.2Ga0.8As/GaAs quantum well heterostructure for the application of light-emitting real-space transfer devices |
| 002457 |
| Effect of well thickness on the two-dimensional electron-hole system in AlxGa1-xSb/InAs quantum wells |
| 002458 |
| Characteristics of InxGa1-xAs/GaAs pseudomorphic modulation doped field effect transistor |
| 002459 |
| Ultraviolet (340-390 nm), room temperature, photoluminescence from InAs nanocrystals embedded in SiO2 matrix |
| 002460 |
| The enhancement of InGaAs Schottky barrier height by the addition of Pr2O3 and In2O3 in the liquid phase epitaxy |
| 002461 |
| Self-formed InGaAs/GaAs quantum dot superlattice and direct observation on strain distribution in the capped superlattice |
| 002462 |
| Gas source molecular beam epitaxy growth of high quality InGaAsP for 0.98 μm Al-free InGaAs/InGaAsP/InGaP laser diodes |
| 002463 |
| Optical characterization of real-space hot-electron transfer in a strained GaAs/In0.2Ga0.8As/GaAs quantum well heterostructure |
| 002464 |
| Comment on High-efficiency energy up-conversion at GaAs-GaInP2 interfaces [Appl. Phys. Lett. 67, 2813 (1995)] |
| 002465 |
| New aspects of K promoted nitridation of the InP(100) surface |
| 002466 |
| InAs room temperature infrared photoconductive detectors grown by molecular-beam epitaxy |
| 002467 |
| Controllable drain cut-in voltage with strong negative differential resistance in GaAs/InGaAs real-space transfer heterostructure |
| 002468 |
| Multiple subband population in delta-doped AlAsSb/InGaAs heterostructures |
| 002469 |
| Magneto-transport properties of semiconductors from flatband magnetocapacitance spectroscopy |
| 002470 |
| Photoluminescence of undoped bulk InP grown by the liquid-encapsulated vertical Bridgman technique |
| 002471 |
| Origins of 1/f noise in indium antimonide photodiodes |
| 002472 |
| Temperature dependence of quantized states in an In0.86Ga0.14As0.3P0.7/InP quantum well heterostructure |
| 002473 |
| Epitaxial dependence of the melting behavior of In nanoparticles embedded in Al matrices |
| 002474 |
| [μ-(1,4-dibenzylpiperazine)-N:N']bis(trimethylindium) dibenzene solvate |
| 002475 |
| Wafer direct bonding of compound semiconductors and silicon at room temperature by the surface activated bonding method |
| 002476 |
| Two kinds of crystalline state of InSb epilayers on GaAs substrates by metalorganic chemical vapor deposition |
| 002477 |
| Transient photocurrent and charge-transfer excitation bands in a tin-phthalocyanine (SnPc) polycrystalline film |
| 002478 |
| Thermal behavior of the indium particles dispersed in oil |
| 002479 |
| The linear and nonlinear optical properties of nanometer-sized In2O3 organosol |
| 002481 |
| The effect of Rb coverage on the oxidation of Rb/InSb (111) interfaces |
| 002483 |
| The chemical status of indium in indium impregnated HZSM-5 catalysts for the SCR of NO with CH4 |
| 002485 |
| Surface reconstruction and faceting of group III/IV (113) systems-common characteristics of the stable surface structures |
| 002487 |
| Study on the electrochemical properties of Fe2O3-TiO2 films prepared by sol-gel process |
| 002488 |
| Study on the WO3 dry lithiation for all-solid-state electrochromic devices |
| 002489 |
| Study on EL emission region of polymer thin film in PPV LED |
| 002490 |
| Study of GSMBE growth and characteristics of high-quality strained In0.63Ga0.37As/InP quantum wells |
| 002491 |
| Study of Cr overlayer on InP(100) by synchrotron radiation photoemission |
| 002492 |
| Structural study of GaSb, InSb melts with XAFS technique |
| 002494 |
| Short-wavelength phase-change optical data storage in In-Sb-Te alloy films |
| 002496 |
| Preparation and properties of indium tin oxide films deposited on polyester substrates by reactive evaporation |
| 002497 |
| Photoelectric conversion of a novel Langmuir-Blodgett film |
| 002498 |
| Optical limiting properties of In2O3 nanoparticles under cw laser illumination |
| 002499 |
| New cuprates with the 1212 structure (Cd,M)(SrLa)2YCu2Oδ (M = Bi, In) |
| 002500 |
| Magnetic-field-inducer carrier freeze-out in narrow-gap semiconductors analysed by capacitance spectroscopy |
| 002501 |
| MBE growth and characterization of high-quality GaInAsSb/AlGaAsSb strained multiple quantum well structures |
| 002502 |
| Low temperature photoluminescence properties of InGaN films grown on (0 1 1 2) Al203 and (0 0 0 1) Al203 substrates by low pressure movpe |
| 002503 |
| Lapping technique of InP single crystal wafer |
| 002504 |
| Joining of sialon ceramics by Sn-5 at % Ti based ternary active solders |
| 002505 |
| Isotropic growth islands of Ga0.16In0.84As0.80Sb0.20 epilayer grown by metalorganic chemical vapour deposition |
| 002506 |
| Investigation of dislocations and traps in MBE grown p-InGaAs/GaAs heterostructures |
| 002507 |
| Intersubband absorption from In0.26Ga0.74As/GaAs quantum dot superlattice |
| 002508 |
| Initial interface reaction in indium/amorphous selenium multilayer thin films |
| 002509 |
| Hydrothermal synthesis and characterization of BaZr1-xMxO3-α (M = Al, Ga, In, x < 0.20) series oxides |
| 002510 |
| Growth of high-quality relaxed In0.3Ga0.7As/GaAs superlattices |
| 002512 |
| GaAs-InP heteroepitaxy and GaAs-InP MESFET fabrication by MOVPE |
| 002513 |
| GSMBE growth and characterization of InxGa1-xAs/InP strained-layer MQWs in a P-i-N Configuration |
| 002515 |
| Energy transfer process from polymer to rare earth complexes |
| 002516 |
| Electropolymeric generation of optically active polypyrrole |
| 002517 |
| Electron-hole recombination range under the control of a Langmuir-Blodgett film barrier |
| 002518 |
| Electroluminescence from ITO/SiO2/Ta2O5/Al multiple-layer structure excited by hot electrons |
| 002519 |
| Electrodeposition and characterization of thallium(III) oxide films |
| 002520 |
| Electrochromism of NiOxHy films grown by DC sputtering |
| 002521 |
| Deposition of oriented polymer films for liquid crystal alignment by pulsed laser ablation |
| 002523 |
| Crystallisation kinetics of substituted InF3 glass by differential scanning calorimetry |
| 002525 |
| Color-tunable polymeric light-emitting diodes based on blend of CN-PPV and PVK |
| 002526 |
| Characteristics of InAs epilayers for Hall effect devices grown on GaAs substrates by MBE |
| 002528 |
| Bright blue electroluminescent devices utilizing poly(N-vinylcarbazole) doped with fluorescent dye |
| 002530 |
| Atomic structure of the Si(103)1 x 1-In surface |
| 002532 |
| Application of annular centrifugal contactor on separating indium from iron |
| 002534 |
| All inorganic oxide solid-state thin-film electrochromic devices with variable reflectance |
| 002535 |
| Absorption spectra of an electrochromic window based on molybdovanadophosphoric acid, Prussian Blue and a solid polymer electrolyte |
| 002536 |
| A reversible electrical memory switching and its microscopic mechanism in amorphous (NCTA)2Ni(DMIT)2 thin films |
| 002537 |
| A comparative study of the thermal stability of the (103) surface of group-III-metal/group-IV-semiconductor systems |
| 002539 |
| A multiple-negative-differential-resistance switch with double InGaP barriers |
| 002540 |
| Two-dimensional excitonic emission in InAs submonolayers |
| 002541 |
| Enhancement of conduction-band effective mass in III-V semiconductor alloys induced by chemical disorder |
| 002542 |
| Transient subpicosecond Raman studies of electron velocity overshoot in an InP p-i-n nanostructure semiconductor |
| 002543 |
| Leakage current analysis for InyGa1-yPzAs1-z/AlxGa1-xAs double heterostructure lasers |
| 002544 |
| High-pressure study of optical transitions in strained In0.2Ga0.8As/GaAs multiple quantum wells |
| 002546 |
| Failure phenomena and mechanisms of polymeric light-emitting diodes: Indium-tin-oxide damage |
| 002547 |
| Dislocations and related traps in p-InGaAs/GaAs lattice-mismatched heterostructures |
| 002548 |
| Photoluminescence studies of InGaAs/InAlAs strained double quantum wells |
| 002549 |
| Analysis of the dark current in the bulk of InAs diode detectors |
| 002550 |
| Misfit dislocations in strained InxGa1-xAs heterostructure on patterned GaAs (001) substrate |
| 002551 |
| Melting process of nanometer-sized in particles embedded in an Al matrix synthesized by ball milling |
| 002552 |
| Photothermal ionization identification of residual donors in high purity InP grown by gas source molecular beam epitaxy |
| 002554 |
| Carrier relaxation and thermal activation of localized excitons in self-organized InAs multilayers grown on GaAs substrates |
| 002555 |
| Effective mass of two-dimensional electron gas in δ-doped Al0.48In0.52As/Ga0.47In0.53As quantum wells |
| 002557 |
| Effects of surface compression strengthening on properties of indium tin oxide films deposited on automobile glass |
| 002558 |
| Photoinduced electron coupling in δ-doped GaAs/In0.18Ga0.82As quantum wells |
| 002559 |
| MeV P ion implantation damage and rapid thermal annealing effects in Fe-doped InP using Raman scattering |
| 002560 |
| Demonstration of light-hole behavior in quaternary GaInAsSb/AlGaAsSb quantum wells using infrared photoluminescence spectroscopy |
| 002561 |
| Observation of <100> misfit dislocations in In0.06Ga0.94As/GaAs heterostructure by synchrotron radiation topography |
| 002562 |
| Observation of compositional modulation in (111)A InGaAs quantum wells and the effect on optical properties |
| 002565 |
| AuGePt ohmic contact to n-type InP |
| 002566 |
| Material properties of compositional graded InxGa1-xAs and InxAl1-xAs epilayers grown on GaAs substrates |
| 002567 |
| X-ray diffraction study of GaAs/InAs/GaAs ultrathin single quantum well |
| 002568 |
| Growth and electrical characterization of Si delta-doped GaInP by low pressure metalorganic chemical vapor deposition |
| 002569 |
| Adatom diffusion on Ge(111) and the corresponding activation energy barrier |
| 002570 |
| Photoluminescence of GaInP under high pressure |
| 002571 |
| Potential model for the subband structures in the inversion layer of narrow-gap semiconductor heterostructures |
| 002572 |
| Ordering along <111> and <100> directions in GaInP demonstrated by photoluminescence under hydrostatic pressure |
| 002573 |
| Transient photovoltaic properties in Al/tin-phthalocyanine/indium-tin-oxide sandwich cell |
| 002574 |
| Observation of double cyclotron resonance in modulation-δ-doped In0.52Al0.48As/In0.53Ga0.47As heterostructure by optical detection |
| 002575 |
| Low-temperature photoluminescence of sulfur- and magnesium-doped InGaP epilayers grown by liquid-phase epitaxy |
| 002577 |
| Elimination of orientation domains and antiphase domains in the epitaxial films with chalcopyrite structure |
| 002578 |
| Alloy composition dependence of photoexcited carrier dynamics in GaxIn1-xP/InP:Fe (x<0.18) |
| 002579 |
| Compositional disordering of InGaAs/GaAs heterostructures by low-temperature-grown GaAs layers |
| 002580 |
| Chemisorption of group-III metals on the (111) surface of group-IV semiconductors: In/Ge(111) |
| 002581 |
| Photoluminescence studies of InAs/InGaAs/AlAs strained single quantum well structures |
| 002583 |
| Volume behavior of α-phase solution of In-Pb-Sn ternary system |
| 002585 |
| The fabrication of dipped CdS and sputtered ITO thin films for photovoltaic solar cells |
| 002588 |
| The effect of III-V ratio at the substrate surface on the quality of InP grown by GSMBE |
| 002589 |
| Study of GaInAsSb epilayer by scanning electron acoustic microscopy |
| 002592 |
| Scattering mechanisms of charge carriers in transparent conducting oxide films |
| 002593 |
| Scanning electron acoustic microscopy of semiconductor materials |
| 002594 |
| Relationship between organic thin film uniformity and its electroluminescence |
| 002596 |
| Plasma polymerization for the deposition of an electroluminescent polymer layer |
| 002598 |
| Photoluminescence enhancement of (NH4)2Sx passivated InP surface by rapid thermal annealing |
| 002599 |
| Parametric study on lattice-matched and pseudomorphic InGaAs/InAlAs/InP modulation-doped heterostructures grown by GSMBE |
| 002601 |
| Optimization of the deposition process parameters for preparation of In2O3 films by reactive evaporation of indium metal |
| 002603 |
| Optical and short-wavelength recording properties of In-Sb-Te phase change thin films |
| 002604 |
| Observation of excitonic polaritons in quaternary GaInAsSb/AlGaAsSb multiple quantum wells |
| 002608 |
| Langmuir-Blodgett films of three new biferrocene derivatives and their electrocatalysis |
| 002609 |
| Iron-doped semi-insulating InP grown by chloride VPE with nitrogen mixed with hydrogen as carrier gas |
| 002611 |
| Investigation of strain-compensated InGaAs(P)/InGaAs(P)/InP multiple quantum well structures grown by LP-MOVPE |
| 002612 |
| Influence of the surface pressure of Langmuir-Blodgett films on the efficiency of organic electroluminescence |
| 002614 |
| Identification of vacancy-type defects in as-grown InP by positron annihilation rate distribution measurements |
| 002615 |
| Identification of vacancy-type defects in As-grown InP by positron annihilation rate distribution measurements |
| 002617 |
| GSMBE growth and PL investigation of lattice-matched InGaAs/InP quantum wells |
| 002618 |
| Exciton line broadening and intersubband absorption in quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells |
| 002619 |
| Enhancement of organic electroluminescent intensity by charge transfer from guest to host |
| 002620 |
| Electroluminescence from dysprosium- and neodymium-containing LB films |
| 002621 |
| Determination of charge transfer distance by potential-step chronoamperospectrometry in a Nafion® film containing Ru(bpy)32+ complex |
| 002622 |
| Characterization of deep centers in AlGaAs/InGaAs/GaAs pseudomorphic HEMT structures grown the molecular beam epitaxy and hydrogen treatment |
| 002623 |
| Catalytic oxidation of InP |
| 002626 |
| A new structure of in-based ohmic contacts to n-type GaAs |
| 002627 |
| (5-benzyldibenzo[b,d]phosphole 5-oxide)-trimethylindium |
| 002628 |
| Raman scattering from longitudinal-optical phonon-plasmon-coupled mode in carbon-doped p-type InGaAs |
| 002629 |
| Optical investigation of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells |
| 002630 |
| PtGe ohmic contact to n-type InP |
| 002631 |
| Persistent-photoconductivity effect in δ-doped Al0.48In0.52As/Ga0.47In0.53As heterostructures |
| 002632 |
| Photoluminescence of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells |
| 002633 |
| Critical layer thickness in metal organic chemical vapor deposition grown InGaAs/GaAs strained quantum wells |
| 002635 |
| Study of surface Fermi level and surface state distribution in InAlAs surface-intrinsic-n+ structure by photoreflectance |
| 002636 |
| Nonlinear polarization switching in a semiconductor single quantum well optical amplifier |
| 002637 |
| Photoluminescence studies of single submonolayer InAs structures grown on GaAs (001) matrix |
| 002638 |
| Photoreflectance temperature dependence of graded InAlAs/InGaAs heterojunction bipolar transistor layers |
| 002639 |
| Photoluminescence of ordered Ga0.5In0.5P grown by metalorganic vapor phase epitaxy |
| 002640 |
| Dependence of electron effective mass on alloy composition of InAlGaAs lattice matched to InP studied by optically detected cyclotron resonance |
| 002641 |
| The properties of magneto-optical MnBiR (R = In, Ge, and Sn) thin films |
| 002643 |
| Photoluminescence of three phonon replicas of the bound exciton in undoped InGaP prepared by liquid phase epitaxy |
| 002644 |
| Observation of spin-splitting crossing between subbands in the optically detected cyclotron-resonance spectra of In0.53Ga0.47As/In0.52Al0.48As heterojunctions |
| 002646 |
| Breaking up of misfit dislocations in GaAs/In0.3Ga0.7As/GaAs heterostructure |
| 002647 |
| A high-current-gain, high-speed P-n-p AlGaAs/InGaAs/GaAs collector-up heterojunction bipolar transistor |
| 002648 |
| Observation of quantum confined Stark effect in InxGa1-xAs/GaAs single-quantum well by photoreflectance spectroscopy |
| 002649 |
| Observation of the anomalous current-voltage characteristics of GaAs/n+-InGaAs/GaAs doped-channel structure |
| 002650 |
| Solid-liquid and solid-vapor equilibrium of Ga-In-As-Sb system and artificial neural network prediction |
| 002651 |
| Observation of excitonic polariton and broadening of room-temperature exciton in strained InGaAs/GaAs quantum wells |
| 002652 |
| Study of the optical properties of In0.52(AlxGa1-x)0.48As by variable angle spectroscopic ellipsometry |
| 002653 |
| Interfacial reactions of Ni-In and Ni/In/Ni ohmic contacts to n-GaAs |
| 002654 |
| Experimental study on the Er/p-InP Schottky barrier |
| 002655 |
| A double metal structure Pt/Al/n-InP diode |
| 002656 |
| Photoemission studies of K-promoted nitridation and oxidation of the InP(100) surface using synchrotron radiation |
| 002657 |
| Annealing-induced near-surface ordering in disordered Ga0.5In0.5P |
| 002658 |
| The wavelength shift in GaInAsSb photodiode structures |
| 002659 |
| Study on symmetry forbidden transitions in an InxGa1-xAs/GaAs single quantum well by temperature dependence |
| 002660 |
| Photoreflectance study on the two-dimensional electron gas of InAlAs/InGaAs heterojunction bipolar transistor grown by molecular beam epitaxy |
| 002661 |
| Cyclotron-resonance studies in relaxed InxGa1-xAs (0≤x≤1) epilayers |
| 002662 |
| Band gap of ''completely disordered'' Ga0.52In0.48P |
| 002663 |
| Characteristics of a δ -doped GaAs/InGaAs p-channel heterostructure field-effect transistor |
| 002664 |
| Photoreflectance characterization of graded InAlAs/InGaAs heterojunction bipolar transistor layers |
| 002665 |
| Interaction of oxygen with a Rb-covered InSb(111) surface |
| 002666 |
| Study of InAlAs/InGaAs heterojunction bipolar transistor layers by optically detected cyclotron resonance |
| 002667 |
| Molecular beam epitaxy regrowth using a thin In layer for surface passivation |
| 002668 |
| Spectroscopic studies of the effects of two-dimensional electron gas on interband transitions |
| 002669 |
| Sulfide-assisted reordering at the InP surface and SiNx/InP interface |
| 002670 |
| Luminescence of low-temperature GaAs in a GaAs/In0.2Ga0.8As multiple quantum well structure |
| 002671 |
| Photomodulated reflectance spectra of In0.2Ga0.8As/GaAs single quantum wells |
| 002673 |
| Performance enhancement in a metal-insulator-semiconductor-like pseudomorphic transistor by utilizing an n--GaAs/n+-In0.2Ga0.8As two-layer structure |
| 002676 |
| Thin InSb films-A candidate for multiple recording |
| 002677 |
| High quality ZnO thin films on InP substrates prepared by radio frequency magnetron sputtering. II. Surface acoustic wave device fabrication |
| 002678 |
| High quality ZnO thin films on InP substrates prepared by radio frequency magnetron sputtering. I. Material study |
| 002679 |
| Characteristics of δ -doped InGaAs/GaAs pseudomorphic double-quantum-well high electron mobility transistors |
| 002680 |
| Investigation of the epitaxial growth of InxGa1-xAs on GaAs(001) and extension of two-dimensional-three-dimensional growth mode transition |
| 002681 |
| Infrared reflection spectra of CdIn2O4 films |
| 002682 |
| Schottky barrier heights of InxAl1-xAs (0≤x≤0.35) epilayers on GaAs |
| 002683 |
| Deep levels in undoped In0.5Ga0.5P and In0.5Ga0.5P0.99As0.01 grown on GaAs (100) substrates |
| 002684 |
| Very strong negative differential resistance real-space transfer transistor using a multiple δ-doping GaAs/InGaAs pseudomorphic heterostructure |
| 002685 |
| Second subband population in δ-doped Al0.48In0.52As/Ga0.47In0.53As heterostructures |
| 002686 |
| Photoluminescence study of highly mismatched In0.53Ga0.47As epilayers grown on InP-coated GaAs substrates |
| 002687 |
| New doped lithium niobate crystal with high resistance to photorefraction-LiNbO3:In |
| 002688 |
| A new InP-based heterojunction bipolar transistor utilizing an In0.53Al0.22Ga0.25As base |
| 002689 |
| Liquid-phase epitaxial growth and characterization of InGaAsP layers grown on GaAsP substrates for application to orange light-emitting diodes |
| 002690 |
| Electric-field dependence of optical absorption properties in coupled quantum wells and their application to 1.3 μm optical modulator |
| 002691 |
| {310} faceting of the Ge(001)2 × 1 surface induced by indium |
| 002694 |
| Twinning in LEC-grown InP crystal |
| 002695 |
| The near infrared photoluminescence of epitaxial Ga0.5In0.5P |
| 002696 |
| Subpicosecond dynamics spectra in InGaAs/GaAs strained-layer and strained quantum well |
| 002697 |
| Spectroscopic ellipsometry studies of indium phthalocyanine films |
| 002700 |
| Scaling characteristics of AC magnetic susceptibility in the high-temperature superconductors with granular structure |
| 002701 |
| Room-temperature excitons in strained InGaAs/GaAs quantum wells |
| 002703 |
| Photomodulated transmission spectroscopy of InxGa1-xAs/GaAs MQWs under hydrostatic pressure |
| 002704 |
| Photoluminescence studies of modulation-doped In0.60Ga0.40As/In0.52Al0.48As strained multiple quantum wells |
| 002706 |
| Nitrite-sensitive liquid membrane electrodes basesd on metalloporphyrin derivatives |
| 002707 |
| Molecular beam epitaxial growth, characterization and performance of high-detectivity GaInAsSb/GaSb PIN detectors operating at 2.0 to 2.6 μm |
| 002709 |
| Metalorganic chemical vapor deposition of GaxIn1-xSb ternary alloys |
| 002711 |
| Influence of doped poly(N-vinylcarbazole) on poly(3-octylthiophene) electroluminescence |
| 002715 |
| High-barrier Pt/Al/n-InP diode |
| 002716 |
| Growth of GaInAsSb alloys by metalorganic chemical vapor deposition |
| 002717 |
| Growth of GaAs-InP heteromaterials and corresponding strain determination |
| 002718 |
| Growth of GaxIn1-xAs1-ySby alloys by metalorganic chemical vapor deposition |
| 002719 |
| GaInAsSb/GaSb infrared photodetectors prepared by MOCVD |
| 002721 |
| Exciton line broadening in strained InGaAs/GaAs single quantum wells |
| 002722 |
| Effect of persistent photoconductivity on photoconductivity spectra in Ga×In1-×P/InP:Fe (× < 0.18) |
| 002723 |
| Effect of annealing treatment on some properties of CdIn2O4 thin films |
| 002724 |
| Effect of V/III ratio on the electrical and optical properties of Si-doped AlGaInP grown by metalorganic chemical vapor deposition |
| 002725 |
| Decrease of dislocations in GaAs by isoelectronic doping of liquid phase epitaxial layers |
| 002726 |
| Critical layer thickness in MOCVD grown InGaAs-GaAs strained quantum wells |
| 002730 |
| Analysis of dopant distributions in LEC-InP |
| 002731 |
| An InGaAs-GaAs strained layer single quantum-well ring laser with a reactive ion-etched tetragonal cavity |
| 002732 |
| Alkaline polishing of InP using double-pouring technique |
| 002733 |
| A resonant Raman study on phonons in GaInAs/AlInAs multiple quantum wells |
| 002734 |
| Surface scattering of x rays from InP (001) wafers |
| 002735 |
| Hole subband in p-type channel of semiconductor heterostructures |
| 002736 |
| Deep center scattering potential in InGaP |
| 002738 |
| Absorption spectroscopy studies of strained InGaAs/GaAs single-quantum wells |
| 002739 |
| Selective epitaxial growth of GaInP by low-pressure metal-organic chemical-vapor deposition using ethyldimethylindium as In source |
| 002740 |
| Study of indium antimonide metal-oxide-semiconductor structure prepared by direct photochemical-vapor deposition |
| 002741 |
| Determination of surface roughness of InP (001) wafers by x-ray scattering |
| 002744 |
| Magnesium doping of InGaAlP grown by low-pressure metalorganic chemical vapor deposition |
| 002745 |
| Window layer for current spreading in AlGaInP light-emitting diode |
| 002748 |
| Observation of a negative persistent photoconductivity effect in In0.25Ga0.75Sb/InAs quantum wells |
| 002749 |
| Electronic properties of AlxGa1-xSb/InAs quantum wells |
| 002750 |
| Molecular-beam epitaxial growth of InxAl1-xAs on GaAs |
| 002751 |
| Enhancement of electron transfer and negative differential resistance in GaAs-based real-space transfer devices by using strained InGaAs channel layers |
| 002752 |
| Influence of cap layer thickness on optical quality in In0.2Ga0.8As/GaAs single quantum wells |
| 002753 |
| X-ray analysis of strain relaxation in strained-layer superlattices |
| 002755 |
| Raman-line-shape study of InxGa1-xAs on InP and GaAs substrates |
| 002756 |
| Negative persistent photoeffect on cyclotron resonance in InAs/Al0.5Ga0.5Sb quantum wells |
| 002758 |
| Experimental investigation of shear stress effects on shock-induced phase transition in InSb single crystal |
| 002759 |
| The band gap of ''perfectly disordered'' Ga0.52In0.48P |
| 002760 |
| Photoreflectance study of surface Fermi level in molecular beam epitaxial grown InAlAs heterostructures |
| 002761 |
| The geometry of misfit dislocations with respect to the strained interface in [001] In0.1Ga0.9As/GaAs single heterostructures |
| 002762 |
| Mobility enhancement in double δ-doped GaAs/InxGa1-xAs/GaAs pseudomorphic structures by grading the heterointerfaces |
| 002763 |
| GaAs-InGaAs quantum-well resonant-tunneling switching device grown by molecular beam epitaxy |
| 002764 |
| Two-dimensional arsenic precipitation by In delta doping during low temperature molecular beam epitaxy growth of GaAs or AlGaAs |
| 002765 |
| Photoluminescence studies of interstitial Zn in InP due to rapid thermal annealing |
| 002767 |
| Photoreflectance characterization of an InAlAs/InGaAs heterostructure bipolar transistor |
| 002769 |
| Strong accumulation of As precipitates in low temperature InGaAs quantum wells grown by molecular beam epitaxy |
| 002771 |
| Dislocation generation mechanisms of InxGa1-xAs (0≤x≤1) epilayers grown on (100) InP substrates by molecular beam epitaxy |
| 002772 |
| Secondary-ion mass spectrometry analysis in pseudomorphic GaAs/InGaAs/GaAs heterostructures utilizing a δ-doping superlattice |
| 002774 |
| Deposition of gallium oxide and indium oxide on GaAs for in situ process use by alternating supply of TEGa, TMIn, and H2O2 as surge pulses |
| 002775 |
| Comparing reactive ion etching of III-V compounds in Cl2/BCl3/Ar and CCl2F2/BCl3/Ar discharges |
| 002778 |
| Wetting of Si-Al-O-N ceramic by Sn-5at.%Ti-X ternary active solder |
| 002780 |
| The effects of substrate bias and reactive gas partial pressure on the resistivity of sputtered ITO films |
| 002783 |
| Synthesis and characterization of new cuprates with a (Bi, In)O monolayer : (Bi, In)Sr2 (Gd, Ca)Cu2Oy |
| 002784 |
| Subpicosecond carrier lifetime in InP |
| 002785 |
| Study of pulse compression from 1.5 μm distributed feedback lasers by a Gires-Tournois interferometer |
| 002786 |
| Spectroscopic studies of the interaction of C60 and C70 films with metal substrates |
| 002788 |
| Piezoelectric field effect transistor (PEFET) using In0.2Ga0.8As/Al0.35Ga0.65As/In0.2Ga0.8As/GaAs strained layer structure on (111)B GaAs substrate |
| 002789 |
| Optical studies of strained InGaAs/GaAs single quantum wells |
| 002792 |
| Modulated cyclotron resonance in multi-quantum well structure of In0.53Ga0.47As/InP induced by interband and exciton excitation |
| 002793 |
| Metal vapor synthesis of air-sensitive transition metal fullerides : evidence of IR spectra |
| 002794 |
| Low temperature electrical transportation behavior of In0.5Ga0.5P |
| 002795 |
| Influence of the substitution of Y by In on the structure and magnetic property of Y2Cu2O5 |
| 002796 |
| Influence of the cap layer thickness on photoluminescence properties in strained INGaAs/GaAs single quantum wells |
| 002797 |
| High-quality InGaP and InGaP/InAlP multiple quantum well grown by gas-source molecular beam epitaxy |
| 002798 |
| High temperature and low threshold current operation of strained AlGaInP/Ga0.4In0.6P multi-quantum well laser diodes emitting at 676nm |
| 002807 |
| X-ray photoelectron spectroscopy studies of CdIn2O4 films |
| 002808 |
| X-ray characterization of strain relaxation in InGaAs/GaAs strained-layer superlattices |
| 002809 |
| Wettability and interfacial reaction of alumina and zirconia by reactive silver-indium base alloy at mid-temperatures |
| 002810 |
| Wannier-Stark localization in InGaAs/GaAs superlattices and its application to electro-optical devices |
| 002811 |
| Very high purity InP layer grown by liquid-phase epitaxy using erbium gettering |
| 002812 |
| Twin formation due to irradiation of energetic electron beam in high-temperature superconductors in In- and Sb-doped YBCO |
| 002814 |
| The angular distributions of sputtered indium atoms at different temperature |
| 002815 |
| Temperature dependence of deep-level photoluminescence in Ga0.5In0.5P epilayers grown by metal-organic chemical vapour deposition |
| 002818 |
| Study of a 1:2 phosphomolybdic anion doped polypyrrole film electrode and its catalysis |
| 002819 |
| Studies on the thermodynamics of the solvent extraction of metals. IV: {Diindium trisulfate + disodium sulfate + 2-ethylhexyl phosphoric acid mono- (2-ethylhexyl) ether + octane + water} |
| 002820 |
| Structure of InxGa1-xAs/GaAs strained-layer superlattices |
| 002822 |
| Quantitative analysis of InxGa1-xAs by Auger electron spectroscopy |
| 002823 |
| Preparation and thermal properties of a lead-indium-aluminum phosphate glass |
| 002824 |
| Poly(3-octylthiophene) as semiconductor for Schottky barrier : effects of doping and storage time |
| 002825 |
| Optical properties of a chemically durable phosphate glass |
| 002826 |
| Optical properties and chemical durability of lead-indium-aluminum phosphate glass |
| 002827 |
| Molecular beam epitaxy growth of InAs-AlSb-GaSb interband tunneling diodes |
| 002828 |
| Miniature InGaAsP/InP phase modulator for integrated opto-electronics |
| 002830 |
| Investigation of erbium doping of InGaAsP layers grown by liquid-phase epitaxy |
| 002836 |
| Field effect on thermal emission from the 0.40 eV electron level in InGaP |
| 002837 |
| Determination of wavelength dependence of the reflectivity at AR coated diode facets |
| 002838 |
| Correlation between deep-level photoluminescence and ordered structure in Ga0.5In0.5OP epilayers |
| 002840 |
| A tristate switching device with double delta-doped quantum well structure |
| 002841 |
| A study of InSb-NiSb magnetoresistance material |
| 002842 |
| A new one-dimensional compound : synthesis and structure of InNb3(Se2)6 |
| 002844 |
| 31P NMR study of the solid solution system Li1+xT2-xInxP3O12 |
| 002846 |
| XPS and AES studies of the interface reaction at the practical Pt/InP interface |
| 002847 |
| The oxygen adsorption and the initial oxidation of indium |
| 002849 |
| The effects of growth pressure and substrate temperature upon InxGa1-xSb epilayer quality grown by MOCVD |
| 002850 |
| The InxGa1-xAsy(0.53 < x < 1, 0 < y < 1) compound semiconductor for LD structures by organometallic vapor-phase epitaxy |
| 002851 |
| Temperature modulated photoluminescence in semiconductor quantum wells |
| 002852 |
| Superconductivity related to indium-diffused GaAs |
| 002853 |
| Study of Ti/InP interface by PES |
| 002856 |
| Some speculations on the etching mechanism of (100) n-GaP and n-InP in HCl solutions |
| 002858 |
| Photoluminescence study of rapid thermal annealing from nitrogen-implanted In0.32Ga0.68P |
| 002859 |
| Photoluminescence studies of InxGa1-xAs/GaAs strained quantum wells under hydrostatic pressure |
| 002860 |
| Oxygen in InxGa1-xAsyP1-y Grown on GaAs |
| 002863 |
| Metalorganic chemical vapor deposition growth of Ga0.5In0.5P ordered alloys by phosphine modulation |
| 002865 |
| MBE growth of high quality In0.4Ga0.6As/GaAs and it's application to photodetector |
| 002867 |
| Indium ohmic contacts to n-ZnSe |
| 002869 |
| In situ photoreflectane study of Schottky barrier formation in InP(110) |
| 002870 |
| High-resolution DLTS and its application to lattice-mismatch-induced deep levels in InGaP |
| 002875 |
| Electrochemical polymerization of pyrrole in aqueous buffer solutions |
| 002876 |
| Effect of zirconium on wettability of alumina and zirconia by silver-indium base alloy |
| 002877 |
| Effect of substrate misorientation on the optical properties and hole concentration of Ga0.5In0.5P and (Al0.5Ga0.5)0.5In0.5P grown by low pressure metalorganic vapor phase epitaxy |
| 002878 |
| Effect of side-chain length on rectification and photovoltaic characteristics of poly(3-alkylthiophene) Schottky barriers |
| 002879 |
| Effect of oxygen concentration on the photoluminescence spectrum on CDiN2O4 films |
| 002880 |
| Effect of graded layer on the X-ray double-crystal diffraction rocking curve |
| 002881 |
| Effect of bias and post-deposition vacuum annealing on structure and transmittance of ITO films |
| 002882 |
| Deposition of YBa2Cu3O7-x films on Si with conductive indium oxide as a buffer layer |
| 002883 |
| Depositing In2O3 films as conductive buffer layers for high temperature YBa2Cu3O7-x superconducting thin films on silicon |
| 002884 |
| Deep levels in GalnP2 grown by metal-organic chemical vapour deposition |
| 002885 |
| Collector-emitter offset voltage in single- and double-base InGaAs(P)/InP heterojunction bipolar transistors |
| 002886 |
| Characterization of InxGa1-xAs/GaAs strained-layer superlattices by transmission electron microscopy and convergent beam electron diffraction |
| 002888 |
| An angle-resolved TOF study on the UV laser-induced etching of InP(100) surface with chlorine |
| 002889 |
| A study of resonant Raman scattering in GaInAs/AlInAs multiple quantum wells |
| 002890 |
| A possible interaction between non-alkali metals and C60 thin films |
| 002893 |
| Valence band studies on Pd/compound semiconductor interfaces |
| 002894 |
| The study of microstructure in iron- and sulphur-doped InP crystals by means of HREM and computer simulation |
| 002895 |
| Tellurium and zinc doping in In0.32Ga0.68P layers grown by liquid-phase epitaxy |
| 002902 |
| Photomodulated transmission spectroscopy of the intersubband transitions in strained In1-xGaxAs/GaAs multiple quantum wells under hydrostatic pressure |
| 002903 |
| On the adsorption voltammetry of indium(III) in the presence of oxine |
| 002906 |
| Interface of anodic sulfide-oxide on n-type InSb |
| 002908 |
| Heterointerface study of perturbed LPE growth of AlGaAs/InGaP single heterostructure |
| 002912 |
| Confined subband-continuum transitions in strained-layer In0.15Ga0.85As-GaAs multiple quantum wells |
| 002913 |
| Auger-electron spectroscopy, electron-energy-loss spectroscopy, and x-ray photoemission spectroscopy studies of oxygen adsorption on the InP(111)-(1×1) surface |
| 002915 |
| |
| 002916 |
| Transport properties in δ-doping of InP |
| 002918 |
| Synergism between chloride and photons in the InP dissolution mechanism |
| 002919 |
| Spectroelectrochemical studies of indium hexacyanoferrate film modified electrodes |
| 002920 |
| Pressure dependence of photoluminescence in Inx Ga1-xAs/GaAs strained quantum wells |
| 002921 |
| Phototransmission study of strained-layer InxGa1-xAs/GaAs single quantum well structures |
| 002922 |
| Photoluminescence study of Si+- and Si+ + P+-implanted InP |
| 002923 |
| Photoluminescence excitation spectroscopy of InxGa1-xAs/GaAs strained-layer coupled double quantum wells |
| 002924 |
| Photoconductivity of phthalocyanine composites. I, Double-layered photoreceptor of CuPc-PVK |
| 002926 |
| Mode-selection characteristic of the symmetrical three-section composite-cavity InGaAsP/InP semiconductor laser |
| 002927 |
| Investigation of deep levels in iron-doped semi-insulating InP |
| 002928 |
| Influence of indium doping on AIGaAs layers grown by molecular beam epitaxy |
| 002929 |
| High carrier concentration in InP by Si+ and P+ dual implantations |
| 002935 |
| Anomalous ion channeling in InGaAs/GaAs strained heterojunction |
| 002936 |
| Anomalous ion channeling effects in InGaAs/GaAs strained heterojunctions |
| 002937 |
| Transparent conducting indium doped ZnO films by dc reactive S-gun magnetron sputtering |
| 002938 |
| The modification of the mechanical properties of soft metals by ion implantation |
| 002941 |
| The bulk and interface defects in electron irradiated InP |
| 002942 |
| Synthesis, characterization, and biodistribution of [113mIn]TE-BAT: a new myocardial imaging agent |
| 002944 |
| Photoluminescence of the residual shallow acceptor in InxGa1-xAs grown on GaAs(001) by molecular beam epitaxy |
| 002945 |
| Interpretation of DSC curves of the indium melting process and determination of the thermal resistance R, thermal time constant RCs and least separation temperature L |
| 002947 |
| Improved activation in Si+ and P+ dually implanted InP |
| 002948 |
| HREM study of atomic image of single crystal indium phosphide |
| 002950 |
| Calculation of dislocation pinning forces in InP with isovalent impurities by the solid-solution hardening model |
| 002951 |
| A study of two-photon interband magnetoabsorption in n-InSb |
| 002952 |
| Surface reaction of sodium on InP(1¯1¯1¯) and its role on enhancement of water vapor adsorption |
| 002954 |
| Preparation of indium tin oxide films by vacuum evaporation |
| 002956 |
| In-Se thin films: crystallization and optical properties |
| 002957 |
| Axial channeling studies of heteroepitaxial In0.25Ga0.75As on GaAs |
| 002959 |
| A new form of the high-temperature isopiestic technique and its application to mercury-bismuth, mercury-cadmium, mercury-gallium, mercury-indium and mercury-tin binary amalgams |
| 002961 |
| The metal-semiconductor transition in amorphous InSb films |
| 002967 |
| Multiphonon absorption in InP |
| 002968 |
| Experimental observation of line hyperfine structure with a plane grating spectrograph |
| 002969 |
| Experimental evidence for indium island formation on clean InAs(111) and InSb(111) surfaces |
| 002972 |
| Dangling bond electronic state on an InP(111) surface |
| 002973 |
| Comparative high-resolution electron-energy-loss spectroscopy study of hydrogen adsorption on GaAs and InP (111) and (111) surfaces |
| 002974 |
| A stress-strain model for EL2 on the basis of chemical principles and its applications. II: Applications and discussion |
| 002976 |
| A missing-row dimer model of InP(100) (4×2) reconstruction as proposed be LEED, UPS and HREELS studies |
| 002977 |
| Study of CuInS grown by the traveling-heater method by electrolyte electroreflectance |
| 002979 |
| Optical spectral properties of surface damage layer of InSb and measurements of damage layer thickness |
| 002981 |
| New phases in the phase transition in amorphous InSb films |
| 002982 |
| Influences of Ti and In additives on the growth and superconducting properties of Nb3Sn fabricated by the tin-enrichment diffusion method |
| 002984 |
| Impurity profiling in mixed diffusion by neutron activation analysis |
| 002986 |
| A LEED, ELS study of InP(100) surfaces prepared by phosphorus deposition and post-annealing |
| 002988 |
| Some aspects of the recent work on InP crystal growth in China |
| 002990 |
| Studies on the physical properties of oxidized films/InGaAsP |
| 002991 |
| Preparation and properties of highly conductive ITO films used in solar cells |
| 002992 |
| Deposition of transparent conducting indium tin oxide thin films by reactive ion plating |
| 002993 |
| Charge transfer at In-Si (111) interface and surface electromigration of indium adatoms |
