| Ident. | Authors (with country if any) | Title |
|---|
| 000005 |
| The electrical and optical properties of Cu-doped In2O3 thin films |
| 000011 |
| Structural effect on controllable resistive memory switching in donor-acceptor polymer systems |
| 000041 |
| Amorphous indium tin oxide films deposited on flexible substrates by facing target sputtering at room temperature |
| 000054 |
| Unexpected surface implanted layer in static random access memory devices observed by microwave impedance microscope |
| 000074 |
| The structural, elastic and thermoelectric properties of Fe2VAl at pressures |
| 000079 |
| The effect of thermal annealing of Mo film on the CuInSe2 layer texture and device performance |
| 000102 |
| Structure and optoelectronic properties of Mg-doped CuFeO2 thin films prepared by sol-gel method |
| 000127 |
| Properties of ITO-AZO bilayer thin films prepared by magnetron sputtering for applications in thin-film silicon solar cells |
| 000169 |
| Natively textured surface hydrogenated gallium-doped zinc oxide transparent conductive thin films with buffer layers for solar cells |
| 000173 |
| Multicolor Electrochromism of Low-Bandgap Copolymers Based on Pyrrole and 3,4-Ethylenedioxythiophene: Fine-Tuning Colors Through Feed Ratio |
| 000182 |
| Magnetron sputtered transparent conductive zinc-oxide stabilized amorphous indium oxide thin films on polyethylene terephthalate substrates at ambient temperature |
| 000198 |
| Introduction of cooperating conductive components into the phosphor to improve the low voltage cathodoluminescence |
| 000206 |
| Influence of Nonmagnetic Oxides on Low-Temperature Resistivity Minima in La2/3Sr1/3MnO3-ZrO2 Matrix Composites |
| 000208 |
| Influence of In doping on the structure, stability and electrical conduction behavior of Ba(Ce,Ti)O3 solid solution |
| 000229 |
| ITO-free photovoltaic cell utilizing a high-resolution silver grid current collecting layer |
| 000237 |
| High temperature thermoelectric and magnetic properties of InxNdyCo4Sb12 skutterudites |
| 000238 |
| High quality of IWO films prepared at room temperature by reactive plasma deposition for photovoltaic devices |
| 000240 |
| H2 annealing effect on the structural and electrical properties of amorphous InGaZnO films for thin film transistors |
| 000270 |
| Electrical Spin Injection and Detection in Mn5Ge3/Ge/Mn5Ge3 Nanowire Transistors |
| 000277 |
| Effects of Ge Dopant on Thermoelectric Properties of Barium and Indium Double-Filled p-Type Skutterudites |
| 000281 |
| Effect of stacking type in precursors on composition, morphology and electrical properties of the CIGS films |
| 000282 |
| Effect of sputtering power and annealing temperature on the properties of indium tin oxide thin films prepared from radio frequency sputtering using powder target |
| 000310 |
| Comparison of the electrical and optical properties of direct current and radio frequency sputtered amorphous indium gallium zinc oxide films |
| 000312 |
| Chemically stable and easily sintered high-temperature proton conductor BaZr0.8In0.2O3-δ for solid oxide fuel cells |
| 000337 |
| A novel ITO/AZO/SiO2/p-Si frame SIS heterojunction fabricated by magnetron sputtering |
| 000389 |
| Synthesis and thermoelectric properties of In0.2+xCo4Sb12+x composite |
| 000398 |
| Study on the preparation and multiproperties of the polypyrrole films doped with different ions |
| 000402 |
| Structure and electrical conductivity of BaCe0.7In0.1A0.2O3-δ (A = Gd, Y) ceramics |
| 000426 |
| Relationship between the short-range order and electrical resistivity in liquid indium-antimony |
| 000434 |
| Properties of different temperature annealed Cu(In,Ga)Se2 and Cu(In,Ga)2Se3.5 films prepared by RF sputtering |
| 000461 |
| Nanocasting synthesis of ordered mesoporous indium tin oxide (ITO) materials with controllable particle size and high thermal stability |
| 000535 |
| Fabrication of Cu(In,Ga)Se2 thin films by ion beam sputtering deposition from a quaternary target at different substrate temperatures |
| 000550 |
| Electrosynthesises and characterizations of copolymers based on pyrrole and 3,4-ethylenedioxythiophene in aqueous micellar solution |
| 000569 |
| Effects of air annealing on the structure, resistivity, infrared emissivity and transmission of indium tin oxide films |
| 000572 |
| Effects of Excess Sb on Thermoelectric Properties of Barium and Indium Double-Filled Iron-Based p-Type Skutterudite Materials |
| 000619 |
| Anomalous spin-orbit coupling in high-density two-dimensional electron gas confined in InGaAs/InAlAs quantum well |
| 000621 |
| Annealing of indium-doped CdMnTe single crystals under Cd vapors |
| 000626 |
| An Indium Tin Oxide Conductive Network for Flexible Electronics Produced Using a Cotton Template |
| 000661 |
| Thermoelectric Properties of an Al-Doped In-Sn-Te-Based Alloy |
| 000662 |
| Thermoelectric Performance of Zn and Nd Co-doped In2O3 Ceramics |
| 000669 |
| The properties of sol-gel processed indium-doped zinc oxide semiconductor film and its application in organic solar cells |
| 000672 |
| The influence of annealing temperature on the structural, electrical and optical properties of ion beam sputtered CuInSe2 thin films |
| 000688 |
| Synthesis, formation mechanism and electric property of hollow InP nanospheres |
| 000694 |
| Synthesis and physica! properties of solar material Cu1+xIn1-xSe2 : Advances in Electronic Materials and Devices in the Far East |
| 000728 |
| Rapid thermal annealing of ITO films |
| 000753 |
| Performance of electron beam deposited tungsten doped indium oxide films as anodes in organic solar cells |
| 000755 |
| Oxygen annealing for deuterium-doped indium tin oxide thin films |
| 000782 |
| Microstructure analysis of sol-gel-derived nanocrystalline ITO thin films |
| 000829 |
| Highly Transparent and Conductive Zn0.86Cd0.11In0.03O Thin Film Prepared by Pulsed Laser Deposition |
| 000833 |
| High-Temperature Thermoelectric Properties of Co4Sb12-Based Skutterudites with Multiple Filler Atoms: Ce0.1InxYbyCo4Sb12 |
| 000835 |
| High-Performance Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors With HfOxNy/HfO2/HfOxNy Tristack Gate Dielectrics |
| 000838 |
| High power GaN-based LEDs with nano-structured Ga-doped ZnO (GZO) transparent conductive layer (TCL) |
| 000853 |
| Finite element simulation and experimental research on ZnO:Al by magnetron sputtering |
| 000861 |
| Fabrication and ionic conductivity of amorphous Li-Al-Ti-P-O thin film |
| 000891 |
| Electrical properties of stacking electrodes for flexible crystalline semiconductor photonic devices |
| 000911 |
| Effect of Ce-Doping on Thermoelectric Properties in PbTe Alloys Prepared by Spark Plasma Sintering |
| 000928 |
| Correlation between resistivity and oxygen vacancy of hydrogen-doped indium tin oxide thin films |
| 000930 |
| Copper doped nickel oxide transparent p-type conductive thin films deposited by pulsed plasma deposition |
| 000957 |
| Advanced light trapping materials: Double layer ZnO:B based transparent conductive oxide |
| 000999 |
| The effect of post-annealing under CdCl2 atmosphere on the properties of ITO thin films deposited by DC magnetron sputtering |
| 000A37 |
| Structural and physical properties evolution of BaIr1-xMnxO3 solid solutions synthesized by high-pressure sintering |
| 000A65 |
| Preparation and characterization of Ga2xIn2(1-x)O3 films deposited on ZrO2 (10 0) substrates by MOCVD |
| 000A79 |
| Optical property analysis of CZT:In single crystals after annealing by a two-step method |
| 000B23 |
| Indium tin oxide thin films for silicon-based electro-luminescence devices prepared by electron beam evaporation method |
| 000B46 |
| Flexible resistance memory devices based on Cu/ZnO:Mg/ITO structure |
| 000B52 |
| Facile electrosynthesis of novel free-standing electroactive poly((S)-(-)-1,1'-bi-2-naphthol dimethyl ether) films with enhanced main chain axial chirality |
| 000B62 |
| Eu doping effects on structural and magnetic properties of (Sr2-xEux)FeMoO6 compounds |
| 000B93 |
| Effects of hydrogen annealing on the structural, optical and electrical properties of indium-doped zinc oxide films |
| 000B97 |
| Effect of substrate temperature on the structural and electrical properties of CIGS films based on the one-stage co-evaporation process |
| 000C03 |
| Effect of ZnO buffer layer on AZO film properties and photovoltaic applications |
| 000C18 |
| Conducting behaviors of PPy/ITO composites synthesized by polymerization |
| 000C20 |
| Characterization of single-crystalline In2O3 films deposited on Y-stabilized ZrO2 (100) substrates by MOCVD |
| 000C33 |
| Adjustment of the selenium amount during ion beam sputtering deposition of CIS thin films |
| 000C63 |
| Weak Localization and Electron-Electron Interactions in Indium-Doped ZnO Nanowires |
| 000C71 |
| Transparent conducting Sn-doped Ga1.4In0.6O3 films prepared on α-Al2O3 (0 0 0 1) by MOCVD |
| 000C75 |
| Thermoelectric properties of indium-filled skutterudites prepared by combining solvothermal synthesis and melting |
| 000C76 |
| Thermal treatment of indium-doped Cd1-xZnxTe single crystals |
| 000D15 |
| Surface morphology modelling for the resistivity analysis of low temperature sputtered indium tin oxide thin films on polymer substrates |
| 000D16 |
| Surface characterization of Ag-ITO cermet films prepared by a new sol-gel method |
| 000D19 |
| Substitution effect on the thermoelectric properties of reduced Nb-doped Sr0.95La0.05TiO3 ceramics |
| 000D21 |
| Study on temperature dependent resistivity of indium-doped cadmium zinc telluride |
| 000D56 |
| Properties of indium tin oxide films deposited on unheated polymer substrates by ion beam assisted deposition |
| 000D60 |
| Preparation and properties of anti perovskite-type nitrides: InNNi3 and InNCO3 |
| 000D70 |
| Physical properties and growth kinetics of co-sputtered indium-zinc oxide films |
| 000D89 |
| Optical and electrical characterization of α-InGaZnO thin film fabricated by pulsed laser deposition for thin film transistor applications |
| 000E29 |
| Indium tin oxide films prepared by atmospheric plasma annealing and their semiconductor-metal conductivity transition around room temperature |
| 000E57 |
| Formation of p-type ZnMgO thin films by In-N codoping method |
| 000E71 |
| Fabrication of polypyrrole micropatterns through microchannel-confined electropolymerization and their electrical conductivities |
| 000E83 |
| Energy band calculation of amorphous indium tin oxide films on polyethylene terephthalate substrate with indirect transition |
| 000F04 |
| Effect of gas composition on the growth and electrical properties of boron-doped diamond films |
| 000F37 |
| Conductivity enhancement by slight indium doping in ZnO nanowires for optoelectronic applications |
| 000F41 |
| Characteristics of ZnO:In thin films prepared by RF magnetron sputtering |
| 000F56 |
| Amorphous tungsten-doped In2O3 transparent conductive films deposited at room temperature from metallic target |
| 000F90 |
| Tungsten-doped In2O3 transparent conductive films with high transmittance in near-infrared region |
| 000F95 |
| Thickness dependence of structural, electrical and optical properties of indium tin oxide (ITO) films deposited on PET substrates |
| 001001 |
| The effects of In isoelectronic substitution for Ga on the thermoelectric properties of SrgGa16-xInxGe30 type-I clathrates |
| 001024 |
| Study on the effect of In diffusion annealing on the electrical properties of CdZnTe by a transformation model |
| 001029 |
| Structure and electrical properties of CdIn2O4 thin films prepared by DC reactive magnetron sputtering |
| 001099 |
| Magnetic property and magnetoresistance in Fe/ITO multilayers |
| 001111 |
| Investigation of vacancy defect in InP crystal by positron lifetime measurement |
| 001116 |
| Indium tin oxide thin films prepared by ion beam assisted deposition technique at different ion beam currents |
| 001127 |
| Hydrogen-assisted nitrogen-acceptor doping in ZnO |
| 001153 |
| Etch pits observation and In distribution in mercury indium telluride single crystals |
| 001199 |
| Dependence of electrical and optical properties on thickness of tungsten-doped indium oxide thin films |
| 001269 |
| The effect of in doping on thermoelectric properties and phase transition of Zn4Sb3 at low temperatures |
| 001324 |
| Preparation and properties of UV-curable polymer/nanosized indium-doped tin oxide (ITO) nanocomposite coatings |
| 001389 |
| Growth, structure and electrical properties of mercury indium telluride single crystals |
| 001392 |
| Growth and characterization of In doped Cd0.8Mn0.2Te single crystal |
| 001439 |
| Effects of post-heat treatment on the characteristics of chalcopyrite CuInSe2 film deposited by successive ionic layer absorption and reaction method |
| 001450 |
| Effect of Co2+, Ni2+, Cu2+, Or Zn2+ on properties of polyaniline nanoparticles |
| 001455 |
| Determination of optical constants and thicknesses of In2O3:Sn films from transmittance data |
| 001459 |
| Deposited indium-tin-oxide (ITO) transparent conductive films by reactive low-voltage ion plating (RLVIP) technique |
| 001475 |
| Characteristics of ITO films fabricated on glass substrates by high intensity pulsed ion beam method |
| 001504 |
| Transparent conductive oxide thin films of tungsten-doped indium oxide |
| 001506 |
| Transparent conductive In2O3:Mo thin films prepared by reactive direct current magnetron sputtering at room temperature |
| 001508 |
| Thermoelectric properties of p-type pseudo-binary (Ag0.365Sb0.558Te)x-(Bi0.5Sb1.5Te3)1- x (x = 0-1.0) alloys prepared by spark plasma sintering |
| 001542 |
| Structure, electrical and optical properties of N-In codoped ZnO thin films prepared by ion-beam enhanced deposition method |
| 001558 |
| Refractive indices of textured indium tin oxide and zinc oxide thin films |
| 001583 |
| Optical and electrical properties of indium-doped Cd0.9Zn0.1Te crystal |
| 001651 |
| Effects of temperature on indium tin oxide particles synthesized by co-precipitation |
| 001652 |
| Effects of resistivity of a p-Si chip on the light-emitting efficiency of a top-emission organic light-emitting diode with the p-Si chip as the anode |
| 001676 |
| Co-electrodeposition and characterization of Cu (In, Ga)Se2 thin films |
| 001679 |
| Characterization of SnS films prepared by constant-current electro-deposition |
| 001708 |
| The electrical and optical properties of molybdenum-doped indium oxide films grown at room temperature from metallic target |
| 001727 |
| Suppression of the metal-insulator transition in the spinel Cu1-xInxIr2S4 system |
| 001756 |
| Post-growth treatment effects on properties of CuInS2 thin films deposited by RF reactive sputtering |
| 001829 |
| Effects of in doping on the properties of CdZnTe single crystals |
| 001882 |
| Conducting fluorocarbon coatings for organic light-emitting diodes |
| 001883 |
| Effect of dye concentration on the charge carrier transport in molecularly doped organic light-emitting diodes |
| 001931 |
| The electrical properties and the interfaces of CU2O/ZnO/ITO p-i-n heterojunction |
| 001942 |
| Study on the perfection of in situ P-injection synthesis LEC-InP single crystals |
| 001960 |
| Room-temperature deposition of thin-film indium tin oxide on micro-fabricated color filters and its application to flat-panel displays |
| 001A09 |
| Growth of In doped CdZnTe by vertical Bridgman method and the effect of In on the crystal properties |
| 001A38 |
| Characteristics of doped indium in Cd0.9Zn0.1Te grown by the Bridgman method |
| 001A56 |
| Comparison of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes with/without GaInAsP and AIGaInAs Graded-Composition Layers |
| 001A69 |
| Improving the Performance of AlGaInP Laser Diode by Oxide Annealing |
| 001A80 |
| Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths |
| 001A87 |
| AlGaInP Light Emitting Diode with a Modulation-Doped Superlattice |
| 001B04 |
| GaN Metal-Semiconductor-Metal Visible-Blind Photodetectors with Transparent Indium-Tin-Oxide Contact Electrodes |
| 001B11 |
| Comparison of p-Side Down and p-Side Up GaN Light-Emitting Diodes Fabricated by Laser Lift-Off |
| 001B33 |
| Synthesis and gas sensitivity of In-doped ZnO nanoparticles |
| 001B56 |
| Preparation and characterization of indium tin oxide films formed by oxygen ion beam assisted deposition |
| 001B60 |
| Piezoelectric coefficient of InN thin films prepared by magnetron sputtering |
| 001B77 |
| Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances |
| 001D03 |
| ZnMgSSe Metal-Semiconductor-Metal Visible-Blind Photodetectors with Transparent Indium-Tin-Oxide Contact Electrodes |
| 001D08 |
| Low-Voltage-Operation High-Power-Density AlGaAs/InGaAs Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistor for Personal Handy-Phone Handset Application |
| 001D17 |
| The structures, electronic states and properties in liquid Ga-Sb and In-Sb systems |
| 001D31 |
| Study on fluorine-doped indium oxide films deposited by reactive evaporating in CF4/O2 gases |
| 001D35 |
| Structural, optical, and electrical properties of indium tin oxide films with corundum structure fabricated by a sol-gel route based on solvothermal reactions |
| 001D45 |
| Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour |
| 001D67 |
| High-quality indium tin oxide films prepared at room temperature by oxygen ion beam assisted deposition |
| 001E20 |
| Comparison of InGaP/InGaAs/GaAs and InGaP/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistors |
| 001E24 |
| Optimum Treatment for Improvement of Indium-Halo Structure for Sub-0.1 μm n-Type Metal-Oxide-Semiconductor Field-Effect Transistor |
| 001E66 |
| Thin-Filmed Riboflavin Devices and Their Applications in the Photodegradation of Chlorinated Organics |
| 001E85 |
| The effects of dopant valence on the structure and electrical conductivity of LaInO3 |
| 001F28 |
| Local conductivity study of TiO2 electrodes by atomic force microscopy |
| 001F79 |
| A new transparent conductive thin film In2O3:Mo |
| 001F96 |
| High-Temperature Breakdown Characteristics of δ-Doped In0.49Ga0.51P/GaAs/In0.25Ga0.75As/AlGaAs High Electron Mobility Transistor |
| 002066 |
| Sr-doped LaInO3 and its possible application in a single layer SOFC |
| 002092 |
| Interfacial structure of nano-granular thin films |
| 002096 |
| ITO films deposited on water-cooled flexible substrate by bias RF Magnetron sputtering |
| 002113 |
| Electrical resistivity and absolute thermopower of liquid GaSb and InSb alloys |
| 002131 |
| Comparison study of ITO thin films deposited onto different substrates at room temperature |
| 002136 |
| Bias voltage dependence of properties for depositing transparent conducting ITO films on flexible substrate |
| 002150 |
| Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/InxGa1-xAs/GaAs pseudomorphic transistors |
| 002151 |
| Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/InxGa1-xAs/GaAs pseudomorphic transistors |
| 002152 |
| Barrier height enhancement of Ni/n-type InP Schottky contact using a thin praseodymium interlayer |
| 002153 |
| Barrier height enhancement of Ni/n-type InP Schottky contact using a thin praseodymium interlayer |
| 002223 |
| The catalytic effect of SmInO3 on the gas-sensing properties of CdIn2O4 |
| 002248 |
| Preparation and gas-sensing properties of NANO-CdIn2O4 material |
| 002249 |
| Preparation and characterization of ITO films deposited on polyimide by reactive evaporation at low temperature |
| 002314 |
| BCl3/Ar plasma-induced surface damage in GaInP/InGaAs/GaInP quantum-well high-electron-mobility transistors |
| 002353 |
| The importance of low-temperature deposition of organic emitting layer on electroluminescent device performance |
| 002387 |
| Langmuir-Blodgett films of poly-N-vinylcarbazole prepared by radical polymerization method |
| 002419 |
| Coprecipitating synthesis and impedance study of CaZr1-xInxO3-δ |
| 002496 |
| Preparation and properties of indium tin oxide films deposited on polyester substrates by reactive evaporation |
| 002811 |
| Very high purity InP layer grown by liquid-phase epitaxy using erbium gettering |
| 002827 |
| Molecular beam epitaxy growth of InAs-AlSb-GaSb interband tunneling diodes |
| 002855 |
| Studies on aluminum/Poly(3-octylthiophene)/indium-tin oxide Schottky barrier electronic device : rectification property and its temperature dependence |
| 002867 |
| Indium ohmic contacts to n-ZnSe |
| 002882 |
| Deposition of YBa2Cu3O7-x films on Si with conductive indium oxide as a buffer layer |
| 002890 |
| A possible interaction between non-alkali metals and C60 thin films |
| 002906 |
| Interface of anodic sulfide-oxide on n-type InSb |
| 002915 |
| |
| 002937 |
| Transparent conducting indium doped ZnO films by dc reactive S-gun magnetron sputtering |
| 002954 |
| Preparation of indium tin oxide films by vacuum evaporation |
| 002961 |
| The metal-semiconductor transition in amorphous InSb films |
| 002981 |
| New phases in the phase transition in amorphous InSb films |
| 002992 |
| Deposition of transparent conducting indium tin oxide thin films by reactive ion plating |
| 002993 |
| Charge transfer at In-Si (111) interface and surface electromigration of indium adatoms |
