Ident. | Authors (with country if any) | Title |
---|
000004 |
| The influence of perpendicular transport behavior on the properties of n-i-p type amorphous silicon solar cells |
000005 |
| The electrical and optical properties of Cu-doped In2O3 thin films |
000009 |
| Substitutional carbon doping of hexagonal multi-walled boron nitride nanotubes (h-MWBNNTs) via ion implantation |
000022 |
| Influences of the type of dopant and substrate on ferromagnetism in ZnO:Mn |
000054 |
| Unexpected surface implanted layer in static random access memory devices observed by microwave impedance microscope |
000062 |
| Tuning emission property of CdS nanowires via indium doping |
000070 |
| Thermoelectric properties of In1.3-xSnxSe prepared by spark plasma sintering method |
000076 |
| The electronic and optical properties of indium doped zinc oxide nanosheets |
000078 |
| The effects of injector doping densities on lasing properties of InP-based quantum cascade lasers at 4.3 μm |
000082 |
| The application of single-layer graphene modified with solution-processed TiOx and PEDOT:PSS as a transparent conductive anode in organic light-emitting diodes |
000102 |
| Structure and optoelectronic properties of Mg-doped CuFeO2 thin films prepared by sol-gel method |
000118 |
| Roles of oxygen vacancy on ferromagnetism in Ni doped In2O3: A hybrid functional study |
000127 |
| Properties of ITO-AZO bilayer thin films prepared by magnetron sputtering for applications in thin-film silicon solar cells |
000154 |
| Photocatalytic degradation of 2,4,6-tribromophenol over Fe-doped ZnIn2S4: Stable activity and enhanced debromination |
000175 |
| Model for the formation energy of In-N clusters and their effect on the energy band gap of the Ga-rich and As-rich InxGa1-xNyAs1-y semiconductor alloys |
000177 |
| Microwave assisted co-precipitation synthesis and photoluminescence characterization of spherical Sr2P2O7:Ce3+, Tb3+ phosphors |
000197 |
| Inverted polymer solar cells integrated with small molecular electron collection layer |
000205 |
| Influence of Tungsten Doping on the Performance of Indium-Zinc-Oxide Thin-Film Transistors |
000206 |
| Influence of Nonmagnetic Oxides on Low-Temperature Resistivity Minima in La2/3Sr1/3MnO3-ZrO2 Matrix Composites |
000208 |
| Influence of In doping on the structure, stability and electrical conduction behavior of Ba(Ce,Ti)O3 solid solution |
000219 |
| Improving photovoltaic performance of dye-sensitized solar cell by downshift luminescence and p-doping effect of Gd2O3:Sm3+ |
000228 |
| Impact Ionization in Absorption, Grading, Charge, and Multiplication Layers of InP/InGaAs SAGCM APDs With a Thick Charge Layer |
000234 |
| Highly efficient two component phosphorescent organic light-emitting diodes based on direct hole injection into dopant and gradient doping |
000245 |
| Green-white-yellow tunable luminescence from Dy3+-Tb3+-Eu3+ doped transparent glass ceramics containing GdSr2F7 nanocrystals |
000247 |
| Fluorine doping inducing high temperature ferromagnetism in (In1-xFex)2O3 |
000254 |
| Ferromagnetism in Cr doped In2O3 |
000269 |
| Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy |
000272 |
| Efficient blue and bluish-green iridium phosphors: Fine-tuning emissions of Flrpic by halogen substitution on pyridine-containing ligands |
000276 |
| Effects of Sb-doping on the grain growth of Cu(In, Ga)Se2 thin films fabricated by means of single-target sputtering |
000283 |
| Effect of ion doping in different sites on the morphology and photocatalytic activity of BiFeO3 microcrystals |
000288 |
| Effect of La3+ substitution on the phase transitions, microstructure and electrical properties of Bi1-xLaxFeO3 ceramics |
000296 |
| Dependence of the optoelectronic properties of selenium-hyperdoped silicon on the annealing temperature |
000297 |
| Density functional theory study the effects of point defects in β-In2S3 |
000341 |
| A model for the spectral blueshift caused by the In-N clusters in InxGa1-xNyAs1-y (x < 0.4 and y≤0.04) after annealing |
000357 |
| UV- and Visible-Light Photocatalytic Activity of Simultaneously Deposited and Doped Ag/Ag(I)-TiO2 Photocatalyst |
000359 |
| Two novel orange cationic iridium(III) complexes with multifunctional ancillary ligands used for polymer light-emitting diodes |
000370 |
| The field emission of indium-doped ZnO films fabricated by room temperature DC magnetron sputtering |
000375 |
| The Effect of B Doping on the Martensitic Transitions, Magnetocaloric and Magnetic Properties in Ni48Mn39In13-xBx Ribbons |
000411 |
| Sn-doped polyhedral In2O3 particles: Synthesis, characterization, and origins of luminous emission in wide visible range |
000415 |
| Sensitivity of the Mott-Schottky Analysis in Organic Solar Cells |
000441 |
| Plasma frequency and dielectric function dependence on doping and temperature for p-type indium phosphide epitaxial films |
000450 |
| Particle Size and Structural Control of ZnWO4 Nanocrystals via Sn2+ Doping for Tunable Optical and Visible Photocatalytic Properties |
000479 |
| Low operating-voltage and high power-efficiency OLED employing MoO3-doped CuPc as hole injection layer |
000484 |
| Interplay of cleaning and de-doping in oxygen plasma treated high work function indium tin oxide (ITO) |
000494 |
| InN doped with Zn: Bulk and surface investigation from first principles |
000499 |
| In assisted realization of p-type C-doped ZnO: A first-principles study |
000508 |
| High-efficiency white organic light-emitting devices with a non-doped yellow phosphorescent emissive layer |
000519 |
| Growth of Zn doped Cu(In,Ga)Se2 thin films by RF sputtering for solar cell applications |
000529 |
| First principles study on the p-type transparent conducting properties of rutile Ti1-xInxO2 |
000544 |
| Enhanced performance of organic light-emitting devices by using electropolymerized poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) film as the anode modification layer |
000546 |
| Enhanced performance in organic light-emitting diode by utilizing MoO3-doped C60 as effective hole injection layer |
000548 |
| Enhanced doping efficiency of the remotely p-doped InAs/InP core-shell nanowires: A first principles study |
000561 |
| Efficient white polymer light-emitting diodes employing a silver nanowire-polymer composite electrode |
000562 |
| Efficient inverted polymer solar cells incorporating doped organic electron transporting layer |
000567 |
| Effects of p-type doping on the optical properties of InAs/GaAs quantum dots |
000579 |
| Effect of Si, In and Ge doping on high ionic conductivity of Li7La3Zr2O12 |
000580 |
| Effect of Molecular Passivation on the Doping of InAs Nanowires |
000583 |
| Effect of Cerium Doping in the TiO2 Photoanode on the Electron Transport of Dye-Sensitized Solar Cells |
000597 |
| Crystal structure and bonding characteristics of In-doped β-Zn4Sb3 |
000608 |
| Changes in the structural and electrical properties of vacuum post-annealed tungsten- and titanium-doped indium oxide films deposited by radio frequency magnetron sputtering |
000613 |
| Beneficial effect of Se substitution on thermoelectric properties of Co4Sb11.9-xTexSe0.1 skutterudites |
000618 |
| Application of Single-Crystalline PMN-PT and PIN-PMN-PT in High-Performance Pyroelectric Detectors |
000647 |
| XRD simulation study of doped LiFeP04 |
000669 |
| The properties of sol-gel processed indium-doped zinc oxide semiconductor film and its application in organic solar cells |
000671 |
| The multiferroic properties of Bi(Fe0.95CO0.05)O3 films |
000675 |
| The effect ofTb doped PbTiO3 inducing layer on texture and tunable property of sol-gel derived Pb0.4Sr0.6TiO3 thin films grown on ITO/glass substrate |
000679 |
| The effect of PCBM doping on the electroluminescent performance of organic light-emitting diodes |
000698 |
| Synthesis and characterization of Er3+ doped CaF2 nanoparticles |
000707 |
| Structural characteristics of Mg-doped (I-x)(K0.5Na0.5)NbO3-xLiSbO3 lead-free ceramics as revealed by Raman spectroscopy |
000709 |
| Strong interface p-doping and band bending in C60 on MoOx |
000754 |
| P-n codoping induced enhancement of ferromagnetism in Mn-doped In2O3: A first-principles study |
000755 |
| Oxygen annealing for deuterium-doped indium tin oxide thin films |
000763 |
| Optically induced current oscillation in a modulation-doped field-effect transistor embedded with InAs quantum dots |
000765 |
| Optical spectroscopy of lanthanides doped in wide band-gap semiconductor nanocrystals |
000787 |
| Low-Voltage Organic/Inorganic Hybrid Transparent Thin-Film Transistors Gated by Chitosan-Based Proton Conductors |
000829 |
| Highly Transparent and Conductive Zn0.86Cd0.11In0.03O Thin Film Prepared by Pulsed Laser Deposition |
000839 |
| High magnetic field inducing magnetic transitions of Fe3+ and Ni2+ doped In2O3 nanocubes |
000855 |
| Ferromagnetic properties of Cu-doped ZnS: A density functional theory study |
000879 |
| Electrodeposition and characterization of CaF2 and rare earth doped CaF2 films |
000909 |
| Effect of acetic acid on ZnO:In transparent conductive oxide prepared by ultrasonic spray pyrolysis |
000910 |
| Effect of Zn doping on structure and ferroelectric properties of PST thin films prepared by sol-gel method |
000911 |
| Effect of Ce-Doping on Thermoelectric Properties in PbTe Alloys Prepared by Spark Plasma Sintering |
000933 |
| Control of ferromagnetism in Fe-doped In2O3 by carbothermal annealing |
000955 |
| Alkali tuning phases and morphologies of Ni2+ doped In2O3 nanocrystals |
000984 |
| Thermoelectric and Magnetothermoelectric Properties of In-doped Nano-ZnO Thin Films Prepared by RF Magnetron Sputtering |
000987 |
| Thermal stable La2Ti2O7:Eu3+ phosphors for blue-chip white LEDs with high color rendering index |
000998 |
| The effects of growth parameters on the RF-MBE growth of dilute InNSb films |
000A16 |
| Synthesis and thermoelectric properties of p-type Zn-doped ZnxIn1-xSb compounds |
000A18 |
| Synthesis and optical properties of N-In codoped ZnO nanobelts |
000A35 |
| Structure distortion and magnetism in double perovskites Ca2-xLaxFeReO6 ( 0 < x ≤ 0.8) |
000A55 |
| Recent advances and challenges for successfu p-type control of InN films with Mg acceptor doping by molecular beam epitaxy |
000A73 |
| Photo/electroluminescence properties of an europium (III) complex doped in 4,4'-N, N'-dicarbazole-biphenyl matrix |
000A86 |
| New promising phosphors Ba3InB9O18 activated by Eu3+/Tb3+ |
000A99 |
| Low content indium-doped zinc oxide films with tunable work function fabricated through magnetron sputtering |
000B18 |
| Infrared luminescence of Tm3+-doped chalcohalide glasses in GeS2-In2S3-CsBr system |
000B20 |
| Influence of oxygen flow rate on microstructural, electrical and optical properties of indium tin tantalum oxide films |
000B23 |
| Indium tin oxide thin films for silicon-based electro-luminescence devices prepared by electron beam evaporation method |
000B35 |
| Highly efficient and stable organic light-emitting diodes employing MoO3-doped perylene-3, 4, 9, 10-tetracarboxylic dianhydride as hole injection layer |
000B37 |
| High-performance ZnO thin film transistors with sputtering SiO2/Ta2O5/SiO2 multilayer gate dielectric |
000B46 |
| Flexible resistance memory devices based on Cu/ZnO:Mg/ITO structure |
000B61 |
| Evaluating 0.53 eV GaInAsSb thermophotovoltaic diode based on an analytical absorption model |
000B62 |
| Eu doping effects on structural and magnetic properties of (Sr2-xEux)FeMoO6 compounds |
000B69 |
| Enhanced Hydrogen Production from Water over Ni Doped ZnIn2S4 Microsphere Photocatalysts |
000B73 |
| Electronic structures and optical properties of Cu1-xNaxInSe2 by first-principle calculations |
000B92 |
| Effects of the co-addition of Zn2+ and sodium dodecylbenzenesulfonate on photocatalytic activity and wetting performance of anatase Ti02 nanoparticle films |
000B95 |
| Effect of vanadium doping on sintering and dielectric properties of strontium barium niobate ceramics |
000C12 |
| Design for new structure InAs/InxGa1-xSb superlattice two-color-short and long wavelength infrared photodetector |
000C17 |
| Correlation between the 3.31-eV emission and the doping level in indium-doped ZnO nanostructures |
000C31 |
| An improvement on short-wavelength photoresponse for a heterostructure HgCdTe two-color infrared detector |
000C36 |
| A very high efficiency electrophosphorescent device doped with short triplet lifetime phosphor using multi-recombination zones |
000C62 |
| Well-Aligned Zn-Doped InN Nanorods Grown by Metal-Organic Chemical Vapor Deposition and the Dopant Distribution |
000C65 |
| Vacuum ultraviolet spectroscopic properties of rare earth (RE) (RE = Eu, Tb, Dy, Sm, Tm)-doped K2GdZr(PO4)3 phosphate |
000C80 |
| The synthesis of Sn-doped ZnO nanowires on ITO substrate and their optical properties |
000C90 |
| The effect of Sr on the properties of Y-doped ceria electrolyte for IT-SOFCs |
000C94 |
| The Al-doping contents dependence of the crystal growth and energy band structure in Al:ZnO thin films |
000D03 |
| Synthesis of In-doped ZnGa2O4 nanobelts and its enhanced cathodoluminescence |
000D04 |
| Synthesis of In-doped Ga2O3 zigzag-shaped nanowires and optical properties |
000D18 |
| Superconductivity in the hole-doped oxy-arsenide RE1-xSrxFeAsO (RE = La, Pr) |
000D21 |
| Study on temperature dependent resistivity of indium-doped cadmium zinc telluride |
000D27 |
| Structure and optical properties of ZnO:V thin films with different doping concentrations |
000D29 |
| Structural defects-mediated room-temperature ferromagnetism in Co-doped SnO2 insulating films |
000D32 |
| Structural and electrochemical performances of Li4Ti5-xZrxO12 as anode material for lithium-ion batteries |
000D41 |
| Size Independence and Doping Dependence of Bending Modulus in ZnO Nanowires |
000D45 |
| Room Temperature Ferromagnetism in Cobalt-Doped LiNbO3 Single Crystalline Films |
000D47 |
| Reversible hydrogen storage in titanium-catalyzed LiAlH4-LiBH4 system |
000D51 |
| Raman property of In doped ZnO superlattice nanoribbons |
000D63 |
| Preparation and electrochemical properties of indium- and sulfur-doped LiMnO2 with orthorhombic structure as cathode materials |
000D67 |
| Precise growth control and characterization of strained AlInAs and GaInAs for quantum cascade lasers by GSMBE |
000D70 |
| Physical properties and growth kinetics of co-sputtered indium-zinc oxide films |
000D73 |
| Photoelectrochromic properties of NiO film deposited on an N-doped TiO2 photocatalytical layer |
000D77 |
| Photocatalytic activities of Ion doped TiO2 thin films when prepared on different substrates |
000D79 |
| Photo-and electro-luminescent properties of 5,10,15,20-tetra-p-tolyl-21H,23H-porphine doped poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene] films |
000D82 |
| PHOTOLUMINESCENCE FROM RARE EARTH IONS DOPED NANOCRYSTALS |
000D87 |
| Optical properties of Eu3+ in transparent Y-Ti-O nanocrystallized sol-gel film |
000E02 |
| Multi-carrier transport properties in p-type ZnO thin films |
000E18 |
| Investigation on martensitic transformation behavior, microstructures and mechanical properties of Fe-doped Ni-Mn-In alloys |
000E25 |
| Influence of Mn doping on the microstructure and optical properties of CdS |
000E68 |
| Faraday rotation in indium doped Cd1-xMnxTe single crystals |
000E69 |
| Facile solution-controlled growth of CuInS2 thin films on FTO and TiO2/FrO glass substrates for photovoltaic application |
000E79 |
| Enhancement effect of nitrogen co-doping on oxygen precipitation in heavily phosphorus-doped Czochralski silicon during high-temperature annealing |
000E98 |
| Effects of annealing process on asymmetric coercivities of Mn-doped BiFe03 thin films |
000F00 |
| Effects of Mn substitution on the structure and properties of chalcopyrite-type CuInSe2 |
000F04 |
| Effect of gas composition on the growth and electrical properties of boron-doped diamond films |
000F37 |
| Conductivity enhancement by slight indium doping in ZnO nanowires for optoelectronic applications |
000F41 |
| Characteristics of ZnO:In thin films prepared by RF magnetron sputtering |
000F50 |
| Aqueous synthesis of mercaptopropionic acid capped Mn2+-doped ZnSe quantum dots |
000F56 |
| Amorphous tungsten-doped In2O3 transparent conductive films deposited at room temperature from metallic target |
000F57 |
| Almost completely dedoped electrochemically deposited luminescent films exhibiting excellent LED performance |
000F63 |
| A sextuple hydrogen bonding molecular duplex bearing 1,8-naphthalimide moieties and polymer light-emitting diode based on it |
000F90 |
| Tungsten-doped In2O3 transparent conductive films with high transmittance in near-infrared region |
000F92 |
| Transparent conductive Ta2O5-codoped ITO thin films prepared by different heating process |
001015 |
| Synthesis and optical properties of ZnO nanowires with a modulated structure |
001026 |
| Study on electroluminescence processes in dye-doped organic light-emitting diodes |
001028 |
| Structures and optical properties of indium doped SrTiO3 thin films by oxygen plasma-assisted pulsed laser deposition |
001094 |
| Mn-including InAs quantum dots fabricated by Mn implantation |
001102 |
| Local structure and EPR g factors for KAl(MoO4)2:Cr3+ and Rbln(MoO4)2:Cr3+ systems |
001127 |
| Hydrogen-assisted nitrogen-acceptor doping in ZnO |
001135 |
| Hierarchical chlorine-doped rutile TiO2 spherical clusters of nanorods : Large-scale synthesis and high photocatalytic activity |
001157 |
| Enhanced electroluminescence of Eu3+ by Tb3+ in complexes Tb1- xEux(TTA)3Dipy |
001174 |
| Electrical properties of InGaN grown by molecular beam epitaxy |
001177 |
| Efficient red organic light-emitting diode sensitized by a phosphorescent Ir compound |
001181 |
| Effects of Eu3+ doping concentration and sintering temperature on fluorescence properties of La3Ga5.5Nb0.5O14 nanoparticles |
001183 |
| Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111) |
001212 |
| Charge storage characteristics of metal-induced nanocrystalline in erbium-doped amorphous silicon films |
001219 |
| Blue-violet luminescence double peak of In-doped films prepared by radio frequency sputtering |
001221 |
| Blue electroluminescent polymers with dopant-host systems and molecular dispersion features : polyfluorene as the deep blue host and 1,8-naphthalimide derivative units as the light blue dopants |
001224 |
| Annihilation of deep level defects in InP through high temperature annealing |
001231 |
| Abnormal rectifying behavior of In/SrTiO3 /SrTiO3:Nb capacitor |
001244 |
| A Host Crystal for the Rare-Earth Ion Dopants : Synthesis of Pure and Ln-Doped Urchinlike BiPO4 Structure and Its Photoluminescence |
001253 |
| Ultraviolet electroluminescence from organic light-emitting diode with cerium(III)-crown ether complex |
001255 |
| Two-step growth of ZnO films with high conductivity and high roughness |
001259 |
| The suppression of charge ordering in Pr0.5Ca0.5Mn1- xTixO3 and Pr0.5- 0.5xCa0.5+0.5xMn1- xTixO3 systems |
001261 |
| The photoluminescent and electroluminescent properties of a new Europium complex |
001269 |
| The effect of in doping on thermoelectric properties and phase transition of Zn4Sb3 at low temperatures |
001270 |
| The effect of C60 doping on the electroluminescent performance of organic light-emitting devices |
001277 |
| Temperature-dependent photoluminescence of undoped, N-doped and N-in codoped ZnO thin films |
001280 |
| Synthesis of a red electrophosphorescent heteroleptic iridium complex and its application in efficient polymer light-emitting diodes |
001295 |
| Study of the characteristics of new red dopants in OLED |
001308 |
| Simulation of In0.65Ga0.35 N single-junction solar cell |
001319 |
| Properties of indium-doped ZnO films prepared in an oxygen-rich plasma |
001368 |
| Key issues associated with low threshold current density for InP-based quantum cascade lasers |
001374 |
| Improving the performance of phosphorescent polymer light-emitting diodes using morphology-stable carbazole-based iridium complexes |
001388 |
| Heavily carbon-doped p-type InGaAs grown by gas source molecular beam epitaxy for application to heterojunction bipolar transistors |
001392 |
| Growth and characterization of In doped Cd0.8Mn0.2Te single crystal |
001407 |
| Enhanced photoelectrocatalytic performance of Zn-doped WO3 photocatalysts for nitrite ions degradation under visible light |
001414 |
| Energy transfer and heat-treatment effect of photoluminescence in Eu3+ -doped TbPO4 nanowires |
001415 |
| Energy band alignment of an In2O3: Mo/Si heterostructure |
001440 |
| Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD |
001448 |
| Effect of donor doping on the magnetic properties of Co-doped ZnO films |
001463 |
| Crystal-originated particles in germanium-doped Czochralski silicon crystal |
001468 |
| Comparative study on the synthesis, photoluminescence and application in InGaN-based light-emitting diodes of TGA:Ce3+ phosphors |
001477 |
| Catalyst-free synthesis of vertically aligned screw-shape InZnO nanorods array |
001504 |
| Transparent conductive oxide thin films of tungsten-doped indium oxide |
001506 |
| Transparent conductive In2O3:Mo thin films prepared by reactive direct current magnetron sputtering at room temperature |
001514 |
| The uniformity of InGaAs in InP/InGaAs/InP by microwave photoconductivity decay (μ-PCD) carrier lifetime measurement |
001542 |
| Structure, electrical and optical properties of N-In codoped ZnO thin films prepared by ion-beam enhanced deposition method |
001557 |
| Role of deep traps in carrier generation and transport in differently doped InP wafers |
001564 |
| Preparation and characterization of silver and indium vanadate co-doped TiO2 thin films as visible-light-activated photocatalyst |
001583 |
| Optical and electrical properties of indium-doped Cd0.9Zn0.1Te crystal |
001593 |
| Martensitic transformation of in-doped Ni58Fe17.5Ga27.5 magnetic shape memory alloys |
001611 |
| Improved polymer light-emitting diodes by the tuning of charge balance |
001623 |
| Growth and characterization of InAs layers obtained by liquid phase epitaxy from Bi solvents |
001649 |
| Efficient and stable single-dopant white OLEDs based on 9,10-bis (2-naphthyl) anthracene |
001670 |
| Defect structure and optical damage resistance of In:Mg:Fe:LiNbO3 crystals with various Li/Nb ratios |
001683 |
| Bright and colour stable white polymer light-emitting diodes |
001687 |
| Anomalous temperature dependence of photoluminescence peak energy in InAs/InAlAs/InP quantum dots |
001697 |
| White organic light-emitting diodes based on bis(2-methyl-8-quinolinolato) (para -phenylphenolato )aluminium (III) doped with tiny red dopant |
001708 |
| The electrical and optical properties of molybdenum-doped indium oxide films grown at room temperature from metallic target |
001727 |
| Suppression of the metal-insulator transition in the spinel Cu1-xInxIr2S4 system |
001752 |
| Preparation of monodispersed tin-doped indium oxide powders by hydrothermal method |
001754 |
| Preparation and thermoelectric properties of Cd3-xAxTeO6 (A = In, La, and Bi) ceramics |
001767 |
| Origin of the blueshift in the infrared absorbance of intersubband transitions in AlxGa1-x N/GaN multiple quantum wells |
001784 |
| Low threshold distribution feedback quantum cascade lasers at 7.6μm grown by gas source molecular beam epitaxy |
001812 |
| Growth and photorefractive properties of In:Fe:LiNbO3 crystals with various [Li]/[Nb] ratios |
001816 |
| Field-emission properties of diamond-like-carbon and nitrogen-doped diamond-like-carbon films prepared by electrochemical deposition |
001829 |
| Effects of in doping on the properties of CdZnTe single crystals |
001833 |
| Effect of electric fields on photoluminescence of 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran |
001835 |
| Dual wavelength 650-780nm laser diodes |
001845 |
| Comparative study of InAs quantum dots grown on different GaAs substrates by MOCVD |
001928 |
| The influence of Si-doping to the characteristics of AlGaInP/GaInP multiple quantum wells |
001934 |
| Synthesis of tin-doped indium oxide nanowires by self-catalytic VLS growth |
001942 |
| Study on the perfection of in situ P-injection synthesis LEC-InP single crystals |
001957 |
| Small molecular white organic light emitting devices with a single emission layer |
001975 |
| Optical property of self-assembled InAs quantum dots in Al0.5Ga0.5As barriers grown by molecular beam epitaxy |
001A08 |
| Growth of heavily Zn-doped InGaAs at low temperature by LP-MOCVD |
001A09 |
| Growth of In doped CdZnTe by vertical Bridgman method and the effect of In on the crystal properties |
001A10 |
| Growth and optical properties of In:Er:LiNbO3 crystals |
001A23 |
| Effects of indium doping on the properties of AlAs/GaAs quantum wells and inverted AlGaAs/GaAs two-dimensional electron gas |
001A24 |
| Effects of V/III ratio on InGaAs and InP grown at low temperature by LP-MOCVD |
001A38 |
| Characteristics of doped indium in Cd0.9Zn0.1Te grown by the Bridgman method |
001A47 |
| A novel transparent pn+ junction based on indium tin oxides |
001B42 |
| Structure defects and optical damage resistance in doubly doped In:Nd:LiNbO3 crystal waveguide substrates |
001B63 |
| Photo-refractive properties of Mg:In:Fe:LiNbO3 crystal |
001B77 |
| Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances |
001C08 |
| Fabrication and characterization of indium-doped p-type SnO2 thin films |
001C19 |
| Effects of In2O3 on the properties of (Co, Nb)-doped SnO2 varistors |
001C27 |
| Deposition of CuInS2 thin films by RF reactive sputtering with a ZnO:Al buffer layer |
001C39 |
| Blue and white organic electroluminescent devices based on 9,10-bis(2'-naphthyl)anthracene |
001D31 |
| Study on fluorine-doped indium oxide films deposited by reactive evaporating in CF4/O2 gases |
001D56 |
| Luminescence of Cu2+ and In3+ co-activated ZnS nanoparticles |
001E83 |
| The photoluminescence characteristics of ZnS nanocrystal doped with M3+(M = In, Ga, Al) |
001F35 |
| Improved color purity and efficiency of blue organic light-emitting diodes via suppression of exciplex formation |
002239 |
| Si doping effect on self-organized InAs/GaAs quantum dots |
002377 |
| On the nature of iron in InP:A FTIR study |
002392 |
| In0.2Ga0.8As/GaAs quantum well laser with C doped cladding and ohmic contact layers |
002403 |
| Growth of Fe doped semi-insulating InP by LP-MOCVD |
002421 |
| Carbon doped 980nm InGaAs strained quantum well lasers grown by metalorganic chemical-vapor deposition |
002725 |
| Decrease of dislocations in GaAs by isoelectronic doping of liquid phase epitaxial layers |
002784 |
| Subpicosecond carrier lifetime in InP |
002793 |
| Metal vapor synthesis of air-sensitive transition metal fullerides : evidence of IR spectra |
002818 |
| Study of a 1:2 phosphomolybdic anion doped polypyrrole film electrode and its catalysis |
002830 |
| Investigation of erbium doping of InGaAsP layers grown by liquid-phase epitaxy |
002856 |
| Some speculations on the etching mechanism of (100) n-GaP and n-InP in HCl solutions |
002857 |
| Rapid isothermal processing of Si+/P+ and Mg+/P+ co-implantations into InP |
002928 |
| Influence of indium doping on AIGaAs layers grown by molecular beam epitaxy |