| Ident. | Authors (with country if any) | Title |
|---|
| 000015 |
| Performance improvement of oxide thin-film transistors with a two-step-annealing method |
| 000074 |
| The structural, elastic and thermoelectric properties of Fe2VAl at pressures |
| 000076 |
| The electronic and optical properties of indium doped zinc oxide nanosheets |
| 000426 |
| Relationship between the short-range order and electrical resistivity in liquid indium-antimony |
| 000614 |
| Band-Edge Electronic Structure of β-In2S3: The Role of s or p Orbitals of Atoms at Different Lattice Positions |
| 000C99 |
| Synthesis, crystal structure and optical properties of an indium phosphate K3In3P4O16 |
| 000E88 |
| Electronic structure and optical properties of In doped SrTiO3/MgO(001) |
| 000F48 |
| Band Engineering in Strained GaN/ultrathin InN/GaN Quantum Wells |
| 001481 |
| Atomistic approach to thickness-dependent bandstructure calculation of InSb UTB |
| 001F69 |
| Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers |
| 002427 |
| Analysis and optimization of 1.55 μm InGaAs/InGaAsP strained multiple quantum well lasers |
| 002900 |
| Structural stability and electronic density of states in (001)- and (111)-oriented (GAP)1/(InP)1 strained-layer superlattices |
| 002905 |
| Localized states induced by self-interstitial defects in ultra-thin GaP/InP strained-layer superlattices |
| 002910 |
| Electronic structure in a Si-doped (GAP)1/(INP)1 strained-layer superlattice |
| 002911 |
| Effect of strain on the electronic structures of ultrathin layer GaP/InP (111) superlattice : bulk and surface |
| 002934 |
| Calculations of optical constants for GaxIn1-xPyAs1-y alloys lattice-matched to InP |
| 002940 |
| The density of states and dielectric constant of monolayer superlattice Ga0.47In0.53As/InP(110) |
| 002958 |
| A simple method for the evaluation of the surface in atom dimerisation and electronic states of the InP(100) surface |
