| Ident. | Authors (with country if any) | Title |
|---|
| 000018 |
| Magnetic properties and magnetocaloric effect in the HoNi1-xCuxIn (x=0, 0.1, 0.3, 0.4) intermetallic compounds |
| 000035 |
| Effect of Ni and Sn doping on the half-metallicity of full Heusler Ti2CoIn alloy |
| 000077 |
| The electronic and optical properties of InGaN-based solar cells alloys: First-principles investigations via mBJLDA approach |
| 000083 |
| Ternary mixed crystal effects on electron-interface optical phonon interactions in InxGa1-xN/GaN quantum wells |
| 000107 |
| Solvothermal synthesis of CuInS2 powders and CuInS2 thin films for solar cell application |
| 000208 |
| Influence of In doping on the structure, stability and electrical conduction behavior of Ba(Ce,Ti)O3 solid solution |
| 000280 |
| Effect of sulfurization in hydrogen sulfide on the properties of Cu(In,Ga)Se2 thin-film absorbers |
| 000341 |
| A model for the spectral blueshift caused by the In-N clusters in InxGa1-xNyAs1-y (x < 0.4 and y≤0.04) after annealing |
| 000385 |
| Synthesis of bullet-like wurtzite CuInS2 nanocrystals under atmospheric conditions |
| 000389 |
| Synthesis and thermoelectric properties of In0.2+xCo4Sb12+x composite |
| 000403 |
| Structural, optical and electrical properties of low-temperature deposition Cu(InxGa1-x)Se2 thin films |
| 000404 |
| Structural features of melts in the In-Bi system |
| 000419 |
| Self-consistent simulation of carrier confinement characteristics in (AlyGa1-yN/AlN)SLs/GaN/(InxGa1-xN/GaN)MQW/GaN heterostructures |
| 000455 |
| Optical properties of Al-doped CuInSe2 from the first principle calculation |
| 000461 |
| Nanocasting synthesis of ordered mesoporous indium tin oxide (ITO) materials with controllable particle size and high thermal stability |
| 000465 |
| Microstructural characterization of Cu-poor Cu (In, Ga)Se2 surface layer |
| 000491 |
| Influence of strain on built-in dipole moment in asymmetric InxGa1-xAs quantum dot molecules |
| 000529 |
| First principles study on the p-type transparent conducting properties of rutile Ti1-xInxO2 |
| 000562 |
| Efficient inverted polymer solar cells incorporating doped organic electron transporting layer |
| 000665 |
| Theoretical study on InxGa1-xN/GaN quantum dots solar cell |
| 000694 |
| Synthesis and physica! properties of solar material Cu1+xIn1-xSe2 : Advances in Electronic Materials and Devices in the Far East |
| 000710 |
| Strain accumulation in InAs/InxGai1-xAs quantum dots |
| 000731 |
| Pyroelectric performances of relaxor-based ferroelectric single crystals and related infrared detectors : Advances in Electronic Materials and Devices in the Far East |
| 000733 |
| Probing into the effect of Auger recombination mechanism on zero bias resistance-area product in In1-xGaxAs detector |
| 000864 |
| Exploring optimal UV emission windows for AlGaN and AlInN alloys grown on different templates |
| 000989 |
| Thermal Stability of Barium and Indium Double-Filled Skutterudite Ba0.3In0.2Co3.95Ni0.05Sb12 Coated by SiO2 Nanoparticles |
| 000A65 |
| Preparation and characterization of Ga2xIn2(1-x)O3 films deposited on ZrO2 (10 0) substrates by MOCVD |
| 000A87 |
| Multilayered films of cobalt oxyhydroxide nanowires/manganese oxide nanosheets for electrochemical capacitor |
| 000A95 |
| Luminescent and electrical performance of polymer light-emitting electrochemical cells with treated indium-tin-oxide electrodes |
| 000B60 |
| Evaluation of the In concentration of an InxGa1-xSb alloy layer in cross-sectional HRTEM images of III-V semiconductor superlattices |
| 000B62 |
| Eu doping effects on structural and magnetic properties of (Sr2-xEux)FeMoO6 compounds |
| 000C52 |
| 1.3 μm InAs/GaAs quantum dots with broad emission spectra |
| 000F98 |
| The martensitic transformation and the magnetocaloric effect in Ni50-xMn38+xIn12 alloys |
| 001144 |
| First-principles calculation of electronic structures and optical properties of wurtzite InxAl1-xN alloys |
| 001205 |
| Covalent integration of luminescent Eu (III) complex onto composite conductors or semiconducting substrates by grafting with organosilane |
| 001268 |
| The experimental viscosity and calculated relative viscosity of liquid In-Sn allcoys |
| 001294 |
| Study of the electric properties of BiFe1- xZrxO3+δ films prepared by the sol-gel process |
| 001334 |
| Parameters-dependent third-order nonlinear optical susceptibility for quadratic electro-optic effect in GaN/InGaN multiple quantum wells |
| 001438 |
| Effects of substitution of Ti for Fe in BiFeO3 films prepared by sol-gel process |
| 001537 |
| Surface and optical properties of AlGaInP films grown on GaAs by metalorganic chemical vapor deposition |
| 001560 |
| Raman scattering studies of the Ge-In sulfide glasses |
| 001571 |
| Photoluminescence characteristics of low indium composition InGaN thin films grown on sapphire by metalorganic chemical vapor deposition |
| 001679 |
| Characterization of SnS films prepared by constant-current electro-deposition |
| 001691 |
| Ageing effect of treated ITO substrates on the performance of organic electroluminescent devices |
| 001727 |
| Suppression of the metal-insulator transition in the spinel Cu1-xInxIr2S4 system |
| 001812 |
| Growth and photorefractive properties of In:Fe:LiNbO3 crystals with various [Li]/[Nb] ratios |
| 001941 |
| Surface modification of indium-tin-oxide anode by oxygen plasma for organic electroluminescent devices |
| 001947 |
| Study of photoluminescence and absorption in phase-separation InGaN films |
| 001985 |
| Metamorphosis of InP self-organized islands and the two-dimensional distribution modified by mismatched GaInP buffer layers |
| 001996 |
| Indium mole fraction effect on the structural and optical properties of quaternary AlInGaN epilayers |
| 001A35 |
| Composition dependence of the Raman A1 mode and additional mode in tetragonal Cu-In-Se thin films |
| 001A45 |
| An approach to determine the chemical composition in InGaN/GaN multiple quantum wells |
| 001B25 |
| Thermodynamic modeling of the Au-In-Sn system |
| 001B27 |
| Thermodynamic analysis on MOVPE growth of Ga1-xInxP semiconductor |
| 001B98 |
| Growth temperature effect on the optical and material properties of AlxInxGa1-x-yN epilayers grown by MOCVD |
| 001C18 |
| Effects of TMIn flow rate of barrier layer on the optical and structural properties of InxGa1-xN/InyGa1-yN multiple quantum wells |
| 001C30 |
| Cyclotron resonance of polarons in ternary mixed crystals |
| 001D42 |
| Quasi-thermodynamic analysis of MOVPE growth of GaxAlyIn1-x-yN |
| 001D69 |
| Growth behavior and crystal structures of different phases in MnxCd1-xIn2Te4 grown by Bridgman method |
| 001D80 |
| Estimation of InN phase inclusion in InGaN films grown by MOVPE |
| 001D99 |
| Analysis of the Al content in semiconductor materials by null ellipsometric spectrometry |
| 001F01 |
| Studies on incorporation of As2 and As4 in III-V compound semiconductors with two group V elements grown by molecular beam epitaxy |
| 001F02 |
| Structural anisotropy and optical properties of InxGa1-xAs quantum dots on GaAs(001) |
| 001F45 |
| Growth of Bi3-2xCa2xFe5-x-yInyVxO12 crystals by top seed solution growth (TSSG) technique |
| 001F58 |
| Effect of pH on the electrochemical deposition of cadmium selenide nanocrystal films |
| 001F62 |
| Design of the active structure of high-performance 1.55-μm In1-x-yGayAlxAs strained MQW lasers |
| 001F70 |
| Angular-dependent photoemission studies of indium tin oxide surfaces |
| 001F81 |
| A mild solvothermal route to chalcopyrite quaternary semiconductor CuIn(SexS1-x)2 nanocrystallites |
| 002106 |
| Experimental and numerical investigations on dissolution and recrystallization processes of GaSb/InSb/GaSb under microgravity and terrestrial conditions |
| 002125 |
| Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots |
| 002215 |
| Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(3 1 1)B surfaces |
| 002216 |
| Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(3 1 1)B surfaces |
| 002218 |
| Thermodynamic analysis of the Ga-In-As-Sb-C-H system |
| 002267 |
| InAs/In0.52Al0.48As quantum wire structure with the specific layer-ordering orientation on InP(0 0 1) |
| 002289 |
| A safe low temperature route to InAs nanofibers |
| 002369 |
| Photoexcited carrier diffusion dependence of differential reflection dynamics in InAsxP1-x/InP (x ≤ 0.35) strained-multiple-quantum wells |
| 002408 |
| Growth and characterization of InAs-rich GaInAsSb alloys on GaSb substrates by MOCVD |
| 002427 |
| Analysis and optimization of 1.55 μm InGaAs/InGaAsP strained multiple quantum well lasers |
| 002490 |
| Study of GSMBE growth and characteristics of high-quality strained In0.63Ga0.37As/InP quantum wells |
| 002510 |
| Growth of high-quality relaxed In0.3Ga0.7As/GaAs superlattices |
| 002640 |
| Dependence of electron effective mass on alloy composition of InAlGaAs lattice matched to InP studied by optically detected cyclotron resonance |
| 002650 |
| Solid-liquid and solid-vapor equilibrium of Ga-In-As-Sb system and artificial neural network prediction |
| 002664 |
| Photoreflectance characterization of graded InAlAs/InGaAs heterojunction bipolar transistor layers |
| 002669 |
| Sulfide-assisted reordering at the InP surface and SiNx/InP interface |
| 002709 |
| Metalorganic chemical vapor deposition of GaxIn1-xSb ternary alloys |
| 002710 |
| Local orientational order in binary liquid Li-In alloys |
| 002718 |
| Growth of GaxIn1-xAs1-ySby alloys by metalorganic chemical vapor deposition |
| 002725 |
| Decrease of dislocations in GaAs by isoelectronic doping of liquid phase epitaxial layers |
| 002728 |
| Characterization of InxGa1-xAs/InP epilayers by X-ray double crystal rocking curve peak profile analysis |
| 002795 |
| Influence of the substitution of Y by In on the structure and magnetic property of Y2Cu2O5 |
| 002807 |
| X-ray photoelectron spectroscopy studies of CdIn2O4 films |
| 002820 |
| Structure of InxGa1-xAs/GaAs strained-layer superlattices |
| 002822 |
| Quantitative analysis of InxGa1-xAs by Auger electron spectroscopy |
| 002844 |
| 31P NMR study of the solid solution system Li1+xT2-xInxP3O12 |
| 002849 |
| The effects of growth pressure and substrate temperature upon InxGa1-xSb epilayer quality grown by MOCVD |
| 002850 |
| The InxGa1-xAsy(0.53 < x < 1, 0 < y < 1) compound semiconductor for LD structures by organometallic vapor-phase epitaxy |
| 002856 |
| Some speculations on the etching mechanism of (100) n-GaP and n-InP in HCl solutions |
| 002860 |
| Oxygen in InxGa1-xAsyP1-y Grown on GaAs |
| 002865 |
| MBE growth of high quality In0.4Ga0.6As/GaAs and it's application to photodetector |
| 002880 |
| Effect of graded layer on the X-ray double-crystal diffraction rocking curve |
| 002886 |
| Characterization of InxGa1-xAs/GaAs strained-layer superlattices by transmission electron microscopy and convergent beam electron diffraction |
| 002902 |
| Photomodulated transmission spectroscopy of the intersubband transitions in strained In1-xGaxAs/GaAs multiple quantum wells under hydrostatic pressure |
| 002934 |
| Calculations of optical constants for GaxIn1-xPyAs1-y alloys lattice-matched to InP |
| 002944 |
| Photoluminescence of the residual shallow acceptor in InxGa1-xAs grown on GaAs(001) by molecular beam epitaxy |
| 002977 |
| Study of CuInS grown by the traveling-heater method by electrolyte electroreflectance |
