| Ident. | Authors (with country if any) | Title |
|---|
| 000080 |
| The effect of secondary electrons on emission |
| 000147 |
| Physical Mechanism of Surface Roughening of the Radial Ge-Core/Si-Shell Nanowire Heterostructure and Thermodynamic Prediction of Surface Stability of the InAs-Core/GaAs-Shell Nanowire Structure |
| 000213 |
| InP/InGaAs/InP DHBT structures with high carbon-doped base grown by gas source molecular beam epitaxy |
| 000240 |
| H2 annealing effect on the structural and electrical properties of amorphous InGaZnO films for thin film transistors |
| 000269 |
| Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy |
| 000317 |
| Bridgman growth and defect characterization of large diameter mercury indium telluride crystals for near infrared detectors |
| 000324 |
| Analysis of Nonradiative Carrier Recombination Processes in InN Films by Mid-infrared Spectroscopy |
| 000372 |
| The effects of tris(2-phenylpyridine) iridium on the hole injection and transport properties of 4,4',4"-tri(N-carbazolyl)-triphenylamine thin films |
| 000419 |
| Self-consistent simulation of carrier confinement characteristics in (AlyGa1-yN/AlN)SLs/GaN/(InxGa1-xN/GaN)MQW/GaN heterostructures |
| 000485 |
| Interfacial Charge Carrier Dynamics of the Three-Component In2O3-TiO2-Pt Heterojunction System |
| 000548 |
| Enhanced doping efficiency of the remotely p-doped InAs/InP core-shell nanowires: A first principles study |
| 000902 |
| Effects of Annealing on Structural and Electrical Properties of CulnSe2 Thin Films Prepared by Hybrid Sputtering/Evaporation Processes |
| 000A16 |
| Synthesis and thermoelectric properties of p-type Zn-doped ZnxIn1-xSb compounds |
| 000A52 |
| Room temperature Er3+ 1.54 μm electroluminescence from Si-rich erbium silicate deposited by magnetron sputtering |
| 000A75 |
| Performance of InSnZrO as transparent conductive oxides |
| 000E02 |
| Multi-carrier transport properties in p-type ZnO thin films |
| 000F05 |
| Effect of buffer thickness on properties of In0.8Ga0.2As/InP with two-step growth technique |
| 000F12 |
| Direct observation of single InAs/GaAs quantum dot spectrum without mesa or mask |
| 000F62 |
| A study of two-step growth and properties of In0.82Ga0.18As on InP |
| 000F90 |
| Tungsten-doped In2O3 transparent conductive films with high transmittance in near-infrared region |
| 001001 |
| The effects of In isoelectronic substitution for Ga on the thermoelectric properties of SrgGa16-xInxGe30 type-I clathrates |
| 001110 |
| Investigation on the structural origin of n-type conductivity in InN films |
| 001199 |
| Dependence of electrical and optical properties on thickness of tungsten-doped indium oxide thin films |
| 001389 |
| Growth, structure and electrical properties of mercury indium telluride single crystals |
| 001455 |
| Determination of optical constants and thicknesses of In2O3:Sn films from transmittance data |
| 001504 |
| Transparent conductive oxide thin films of tungsten-doped indium oxide |
| 001506 |
| Transparent conductive In2O3:Mo thin films prepared by reactive direct current magnetron sputtering at room temperature |
| 001648 |
| Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy |
| 001708 |
| The electrical and optical properties of molybdenum-doped indium oxide films grown at room temperature from metallic target |
| 001759 |
| Point-defects-induced band edge displacements and band-gap narrowing in CdIn2O4 thin films |
| 001888 |
| Study of lateral-carrier transport in InAs quantum-dot heterostructures by optical spectroscopy |
| 001922 |
| Transport properties of InAs epilayers grown on GaAs substrates by using the prelayer technique |
| 001963 |
| Relatively large electric-field induced electron drift velocity observed in an InxGa1-xAs-based p-i-n semiconductor nanostructure |
| 001A23 |
| Effects of indium doping on the properties of AlAs/GaAs quantum wells and inverted AlGaAs/GaAs two-dimensional electron gas |
| 001A29 |
| Dislocation scattering in a two-dimensional electron gas of an AlxGa1-xN/GaN heterostructure |
| 001B84 |
| Localized exciton dynamics in AlInGaN alloy |
| 001C08 |
| Fabrication and characterization of indium-doped p-type SnO2 thin films |
| 001C79 |
| Multiple-component photoluminescence decay caused by carrier transport in InGaN/GaN multiple quantum wells with indium aggregation structures |
| 001D60 |
| Interband impact ionization in THz-driven InAs/AlSb heterostructures |
| 001D64 |
| Improved purity of long-wavelength InAsSb epilayers grown by melt epitaxy in fused silica boats |
| 001E69 |
| Piezoelectric-field-enhanced lateral ambipolar diffusion coefficient in InGaN/GaN multiple quantum wells |
| 001E73 |
| The Effects of Super-Steep-Retrograde Indium Channel Profile on Deep Submicron n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor |
| 001F57 |
| Effects of plasma treatment on the electrical and optical properties of indium tin oxide films fabricated by r.f. reactive sputtering |
| 001F79 |
| A new transparent conductive thin film In2O3:Mo |
| 002030 |
| Improved time-of-flight technique for measuring carrier mobility in thin films of organic electroluminescent materials |
| 002095 |
| In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE |
| 002249 |
| Preparation and characterization of ITO films deposited on polyimide by reactive evaporation at low temperature |
| 002302 |
| Optical and electrical properties of Sn-doped indium oxide films deposited on polyester by reactive evaporation |
| 002369 |
| Photoexcited carrier diffusion dependence of differential reflection dynamics in InAsxP1-x/InP (x ≤ 0.35) strained-multiple-quantum wells |
| 002404 |
| Growth and transport properties of InAs thin films on GaAs |
| 002526 |
| Characteristics of InAs epilayers for Hall effect devices grown on GaAs substrates by MBE |
| 002588 |
| The effect of III-V ratio at the substrate surface on the quality of InP grown by GSMBE |
| 002592 |
| Scattering mechanisms of charge carriers in transparent conducting oxide films |
| 002663 |
| Characteristics of a δ -doped GaAs/InGaAs p-channel heterostructure field-effect transistor |
| 002684 |
| Very strong negative differential resistance real-space transfer transistor using a multiple δ-doping GaAs/InGaAs pseudomorphic heterostructure |
| 002702 |
| Preparation and properties of transparent conducting indium tin oxide films deposited by reactive evaporation |
| 002712 |
| Impact ionization in balance equation theory |
| 002736 |
| Deep center scattering potential in InGaP |
| 002772 |
| Secondary-ion mass spectrometry analysis in pseudomorphic GaAs/InGaAs/GaAs heterostructures utilizing a δ-doping superlattice |
| 002797 |
| High-quality InGaP and InGaP/InAlP multiple quantum well grown by gas-source molecular beam epitaxy |
