| Ident. | Authors (with country if any) | Title |
|---|
| 000041 |
| Amorphous indium tin oxide films deposited on flexible substrates by facing target sputtering at room temperature |
| 000070 |
| Thermoelectric properties of In1.3-xSnxSe prepared by spark plasma sintering method |
| 000074 |
| The structural, elastic and thermoelectric properties of Fe2VAl at pressures |
| 000160 |
| Optical properties of InN films grown by pressurized-reactor metalorganic vapor phase epitaxy |
| 000237 |
| High temperature thermoelectric and magnetic properties of InxNdyCo4Sb12 skutterudites |
| 000240 |
| H2 annealing effect on the structural and electrical properties of amorphous InGaZnO films for thin film transistors |
| 000269 |
| Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy |
| 000277 |
| Effects of Ge Dopant on Thermoelectric Properties of Barium and Indium Double-Filled p-Type Skutterudites |
| 000286 |
| Effect of O2 plasma immersion on electrical properties and transistor performance of indium gallium zinc oxide thin films |
| 000292 |
| Dopant-induced band filling and bandgap renormalization in CdO: In films |
| 000296 |
| Dependence of the optoelectronic properties of selenium-hyperdoped silicon on the annealing temperature |
| 000310 |
| Comparison of the electrical and optical properties of direct current and radio frequency sputtered amorphous indium gallium zinc oxide films |
| 000317 |
| Bridgman growth and defect characterization of large diameter mercury indium telluride crystals for near infrared detectors |
| 000324 |
| Analysis of Nonradiative Carrier Recombination Processes in InN Films by Mid-infrared Spectroscopy |
| 000419 |
| Self-consistent simulation of carrier confinement characteristics in (AlyGa1-yN/AlN)SLs/GaN/(InxGa1-xN/GaN)MQW/GaN heterostructures |
| 000572 |
| Effects of Excess Sb on Thermoelectric Properties of Barium and Indium Double-Filled Iron-Based p-Type Skutterudite Materials |
| 000656 |
| Ultrafast hot carrier dynamics in InN epitaxial films |
| 000729 |
| Raman scattering and Rutherford backscattering studies on InN films grown by plasma-assisted molecular beam epitaxy |
| 000733 |
| Probing into the effect of Auger recombination mechanism on zero bias resistance-area product in In1-xGaxAs detector |
| 000770 |
| Optical and electrical properties of zinc oxide/indium/zinc oxide multilayer structures |
| 000824 |
| Improvement of structural and electrical properties of Cu2O films with InN epilayers |
| 000829 |
| Highly Transparent and Conductive Zn0.86Cd0.11In0.03O Thin Film Prepared by Pulsed Laser Deposition |
| 000837 |
| High quality InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition |
| 000902 |
| Effects of Annealing on Structural and Electrical Properties of CulnSe2 Thin Films Prepared by Hybrid Sputtering/Evaporation Processes |
| 000995 |
| The influence of indium surfactant on the electrical properties of GaN epilayers grown by metal-organic chemical vapour deposition |
| 000A16 |
| Synthesis and thermoelectric properties of p-type Zn-doped ZnxIn1-xSb compounds |
| 000A75 |
| Performance of InSnZrO as transparent conductive oxides |
| 000A90 |
| Mobility enhancement of p-type SnO2 by In-Ga co-doping |
| 000B20 |
| Influence of oxygen flow rate on microstructural, electrical and optical properties of indium tin tantalum oxide films |
| 000B33 |
| Hydrogen effects on crystallinity, photoluminescence, and magnetization of indium tin oxide thin films sputter-deposited on glass substrate without heat treatment |
| 000B75 |
| Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films |
| 000B97 |
| Effect of substrate temperature on the structural and electrical properties of CIGS films based on the one-stage co-evaporation process |
| 000C03 |
| Effect of ZnO buffer layer on AZO film properties and photovoltaic applications |
| 000C20 |
| Characterization of single-crystalline In2O3 films deposited on Y-stabilized ZrO2 (100) substrates by MOCVD |
| 000C71 |
| Transparent conducting Sn-doped Ga1.4In0.6O3 films prepared on α-Al2O3 (0 0 0 1) by MOCVD |
| 000C78 |
| Theoretical study of ultrafast index dynamics in semiconductor optical amplifiers |
| 000C79 |
| Theoretical study of InGaAsP-InP active microring |
| 000D17 |
| Suppression of indium droplet formation by adding CC14 during metalorganic chemical vapor deposition growth of InN films |
| 000D70 |
| Physical properties and growth kinetics of co-sputtered indium-zinc oxide films |
| 000E29 |
| Indium tin oxide films prepared by atmospheric plasma annealing and their semiconductor-metal conductivity transition around room temperature |
| 000F04 |
| Effect of gas composition on the growth and electrical properties of boron-doped diamond films |
| 000F05 |
| Effect of buffer thickness on properties of In0.8Ga0.2As/InP with two-step growth technique |
| 000F07 |
| Effect of annealing on electrical properties of InAsSb films grown on GaAs substrates by molecular beam epitaxy |
| 000F56 |
| Amorphous tungsten-doped In2O3 transparent conductive films deposited at room temperature from metallic target |
| 000F62 |
| A study of two-step growth and properties of In0.82Ga0.18As on InP |
| 000F90 |
| Tungsten-doped In2O3 transparent conductive films with high transmittance in near-infrared region |
| 000F92 |
| Transparent conductive Ta2O5-codoped ITO thin films prepared by different heating process |
| 001001 |
| The effects of In isoelectronic substitution for Ga on the thermoelectric properties of SrgGa16-xInxGe30 type-I clathrates |
| 001006 |
| The characterization and properties of InN grown by MOCVD |
| 001092 |
| Modified LPE technique growth and properties of long wavelength InAs0.05Sb0.95 thick film |
| 001098 |
| Many body interactions and dynamic shift of the absorption resonance wavelength in all-optical polarization switching of InGaAs(P) MQWs |
| 001110 |
| Investigation on the structural origin of n-type conductivity in InN films |
| 001217 |
| Built-in electric field effect on the linear and nonlinear intersubband optical absorptions in InGaN strained single quantum wells |
| 001265 |
| The high mobility InN film grown by MOCVD with GaN buffer layer |
| 001389 |
| Growth, structure and electrical properties of mercury indium telluride single crystals |
| 001417 |
| Electronic transport of (In1- xFex)2O3- v magnetic semiconductor and Fe-In2O3 granular films in the presence of electronic screening |
| 001420 |
| Electronic band structures and transport properties of wurtzite indium nitride grown by metalorganic vapor phase epitaxy |
| 001421 |
| Electron-density dependence of longitudinal-optical phonon lifetime in InN studied by subpicosecond time-resolved Raman spectroscopy |
| 001455 |
| Determination of optical constants and thicknesses of In2O3:Sn films from transmittance data |
| 001475 |
| Characteristics of ITO films fabricated on glass substrates by high intensity pulsed ion beam method |
| 001504 |
| Transparent conductive oxide thin films of tungsten-doped indium oxide |
| 001516 |
| The superconductivity in boron-doped polycrystalline diamond thick films |
| 001595 |
| Low temperature step-graded InAlAs/GaAs metamorphic buffer layers grown by molecular beam epitaxy |
| 001623 |
| Growth and characterization of InAs layers obtained by liquid phase epitaxy from Bi solvents |
| 001676 |
| Co-electrodeposition and characterization of Cu (In, Ga)Se2 thin films |
| 001708 |
| The electrical and optical properties of molybdenum-doped indium oxide films grown at room temperature from metallic target |
| 001759 |
| Point-defects-induced band edge displacements and band-gap narrowing in CdIn2O4 thin films |
| 001775 |
| Multifunctional photoelectrochemical logic gates based on a hemicyanine sensitized semiconductor electrode |
| 001888 |
| Study of lateral-carrier transport in InAs quantum-dot heterostructures by optical spectroscopy |
| 001922 |
| Transport properties of InAs epilayers grown on GaAs substrates by using the prelayer technique |
| 001933 |
| Temperature effects on optical properties of InN thin films |
| 001A24 |
| Effects of V/III ratio on InGaAs and InP grown at low temperature by LP-MOCVD |
| 001A30 |
| Determination of the effective refractive index spectrum of a quantum-well semiconductor laser diode from the measured modal gain spectrum |
| 001A47 |
| A novel transparent pn+ junction based on indium tin oxides |
| 001A90 |
| Surface band-bending effects on the optical properties of indium gallium nitride multiple quantum wells |
| 001B86 |
| Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells |
| 001C08 |
| Fabrication and characterization of indium-doped p-type SnO2 thin films |
| 001C26 |
| Designing two-dimensional electron gas in AlGaN/InGaN/GaN heterostructures through the incorporated InGaN layer |
| 001C48 |
| A simple model for optimization design of high performance In1-x-yGayAlxAs strained MQW DFB lasers |
| 001C77 |
| Investigation of transparent and conductive undoped Zn2In2O5-x films deposited on n-type GaN layers |
| 001C90 |
| Piezoelectric effect on Al0.35-δInδGa0.65N/GaN heterostructures |
| 001C94 |
| Scanning electron filling modulation reflectance of charged InGaAs self-assembled quantum dot |
| 001D64 |
| Improved purity of long-wavelength InAsSb epilayers grown by melt epitaxy in fused silica boats |
| 001D67 |
| High-quality indium tin oxide films prepared at room temperature by oxygen ion beam assisted deposition |
| 001D97 |
| Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers |
| 001E62 |
| Threshold characteristics of 1.55-μm InGaAs/InGaAsP strain-compensated quantum well lasers with zero net strain |
| 001F57 |
| Effects of plasma treatment on the electrical and optical properties of indium tin oxide films fabricated by r.f. reactive sputtering |
| 001F79 |
| A new transparent conductive thin film In2O3:Mo |
| 001F99 |
| Detection of terahertz radiation from longitudinal optical phonon-plasmon coupling modes in InSb film using an ultrabroadband photoconductive antenna |
| 002032 |
| Accurate determination of quasi-Fermi-level separation of semiconductor lasers |
| 002033 |
| Accurate determination of quasi-Fermi-level separation of semiconductor lasers |
| 002095 |
| In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE |
| 002134 |
| Carrier mobility distribution in annealed undoped LEC InP material |
| 002191 |
| Effect of threading dislocations on electron transport in In0.24Ga0.76N/GaN multiple quantum wells |
| 002194 |
| The optical and electrical studies of hydrogen passivation in GaInP/GaAs heterostructures |
| 002196 |
| Growth and characterization of high-quality InAs0.86Sb0.05P0.09 alloy by liquid-phase epitaxy |
| 002201 |
| Influence of sapphire nitridation on properties of indium nitride prepared by metalorganic vapor phase epitaxy |
| 002224 |
| The analysis of the performance for P-p-n and N-n-p hetero- and homojunction GaSb/Ga0.8In0.2As0.19Sb0.81 photodetectors |
| 002302 |
| Optical and electrical properties of Sn-doped indium oxide films deposited on polyester by reactive evaporation |
| 002436 |
| The third subband population in modulation-doped InGaAs/InAlAs heterostructures |
| 002588 |
| The effect of III-V ratio at the substrate surface on the quality of InP grown by GSMBE |
| 002592 |
| Scattering mechanisms of charge carriers in transparent conducting oxide films |
| 002628 |
| Raman scattering from longitudinal-optical phonon-plasmon-coupled mode in carbon-doped p-type InGaAs |
| 002666 |
| Study of InAlAs/InGaAs heterojunction bipolar transistor layers by optically detected cyclotron resonance |
| 002724 |
| Effect of V/III ratio on the electrical and optical properties of Si-doped AlGaInP grown by metalorganic chemical vapor deposition |
| 002748 |
| Observation of a negative persistent photoconductivity effect in In0.25Ga0.75Sb/InAs quantum wells |
| 002783 |
| Synthesis and characterization of new cuprates with a (Bi, In)O monolayer : (Bi, In)Sr2 (Gd, Ca)Cu2Oy |
