| Ident. | Authors (with country if any) | Title |
|---|
| 000096 |
| Surface roughness induced electron mobility degradation in InAs nanowires |
| 000457 |
| One-Dimensional Quantum Confinement Effect Modulated Thermoelectric Properties in InAs Nanowires |
| 000509 |
| High-Performance UV-Visible-NIR Broad Spectral Photodetectors Based on One-Dimensional In2Te3 Nanostructures |
| 000605 |
| Chemical vapor deposition growth of InN nanostructures: Morphology regulation and field emission properties |
| 000686 |
| Technology ready use of single layer graphene as a transparent electrode for hybrid photovoltaic devices |
| 000720 |
| Self-assembled InAs/GaAs quantum dot molecules with InxGa1- xAs strain-reducing layer |
| 000831 |
| High-power 1.25 μm InAs QD VECSEL based on resonant periodic gain structure |
| 000844 |
| Growth and optical properties of tetrapod-like indium-doped ZnO nanorods with a layer-structured surface |
| 000A18 |
| Synthesis and optical properties of N-In codoped ZnO nanobelts |
| 000B27 |
| In2O3 nanorod arrays grown at grain-boundary triple junctions of Cu-Sn alloy substrate |
| 000C63 |
| Weak Localization and Electron-Electron Interactions in Indium-Doped ZnO Nanowires |
| 000D03 |
| Synthesis of In-doped ZnGa2O4 nanobelts and its enhanced cathodoluminescence |
| 000E32 |
| InP nanowires with various morphologies formed by Au-assisted metal-organic chemical vapor deposition |
| 000E43 |
| High efficiency passively Q-switched mode-locking Nd:GdV04 laser with LT-In0.25Ga0.75As saturable absorber |
| 000E50 |
| Growth and field emission properties of globe-like diamond microcrystalline-aggregate |
| 000E96 |
| Electrical and Photoresponse Properties of an Intramolecular p-n Homojunction in Single Phosphorus-Doped ZnO Nanowires |
| 000F18 |
| Diode-pumped passively mode-locked Nd:LuVO4 laser with LT-In0.25Ga0.75As saturable absorber |
| 000F36 |
| Controllable Synthesis of Various In2O3 Submicron/Nanostructures Using Chemical Vapor Deposition |
| 000F46 |
| CVD growth of InGaN nanowires |
| 001006 |
| The characterization and properties of InN grown by MOCVD |
| 001045 |
| Self-Induced Preparation of Assembled Shrubbery TiSi Nanowires by Chemical Vapor Deposition |
| 001083 |
| Nitrogen Incorporation Characteristics of 4H-SiC Epitaxial Layer |
| 001086 |
| Near-infrared photodetectors based on mercury indium telluride single crystals |
| 001101 |
| Low-temperature CVD synthesis route to GaN nanowires on silicon substrate |
| 001106 |
| Large-Scale Synthesis of In2O3 Nanocubes Under Nondynamic Equilibrium Model |
| 001127 |
| Hydrogen-assisted nitrogen-acceptor doping in ZnO |
| 001190 |
| Dispersion of the nano-lnP Doped Fiber |
| 001208 |
| Competitive growth of In2O3 nanorods with rectangular cross sections |
| 001255 |
| Two-step growth of ZnO films with high conductivity and high roughness |
| 001267 |
| The growth and field electron emission of InGaN nanowires |
| 001366 |
| Large-scale CVD synthesis of nitrogen-doped multi-walled carbon nanotubes with controllable nitrogen content on a CoxMg1- xMoO4 catalyst |
| 001373 |
| In2O3 nanotowers: Controlled synthesis and mechanism analysis |
| 001402 |
| Fabrication and characteristics of silica optical fiber doped with InP nano-semiconductor material |
| 001494 |
| A Novel Optical Fibre Doped with the Nano-material as InP |
| 001523 |
| Temperature dependence of interband transition energy in InGaAsN strain-compensated quantum-well and ridge-waveguide lasers fabricated with pulsed anodic oxidation |
| 001537 |
| Surface and optical properties of AlGaInP films grown on GaAs by metalorganic chemical vapor deposition |
| 001547 |
| Structural and optical properties of violet InGaN/AlInGaN light-emitting diodes grown by MOCVD |
| 001571 |
| Photoluminescence characteristics of low indium composition InGaN thin films grown on sapphire by metalorganic chemical vapor deposition |
| 001577 |
| Optimization of active region for 1.3-μm GaInAsP compressive-strain multiple-quantum-well ridge waveguide laser diodes |
| 001608 |
| Indium oxide nanostructures : Semiconductor nanowires |
| 001610 |
| Improved quality of InGaN/GaN multiple quantum wells by a strain relief layer |
| 001614 |
| High-quality multiple quantum wells selectively grown with tapered masks by ultra-low-pressure MOCVD |
| 001621 |
| Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties |
| 001636 |
| Evolution of mosaic structure in InN grown by metalorganic chemical vapor deposition |
| 001681 |
| Catalytic growth of In2O3 nanobelts by vapor transport |
| 001693 |
| A 1.5 μm n-type InGaAsP/InGaAsP modulation-doped multiple quantum well DFB laser by MOCVD |
| 001703 |
| Thermal annealing of InN films grown by metal-organic chemical vapor deposition |
| 001782 |
| Luminescence properties of multi-layer InGaN quantum dots grown on C- and R-plane sapphire substrates |
| 001783 |
| Low-temperature growth of InN by MOCVD and its characterization |
| 001841 |
| Controlled synthesis of In2O3 octahedrons and nanowires |
| 001843 |
| Construction and photoluminescence of In2O3 nanotube array by CVD-template method |
| 001874 |
| Controlled carbon nanotube sheathing on ultrafine InP nanowires |
| 001900 |
| InGaN/GaN Multi-Quantum Well Metal-Insulator Semiconductor Photodetectors with Photo-CVD SiO2 Layers |
| 001917 |
| Ultra-High-Density InGaN Quantum Dots Grown by Metalorganic Chemical Vapor Deposition |
| 001924 |
| The synthesis of In, In2O3 nanowires and In2O3 nanoparticles with shape-controlled |
| 001951 |
| Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows |
| 001952 |
| Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition |
| 001970 |
| Photoluminescence study of InGaN/GaN quantum dots grown on passivated GaN surface |
| 001985 |
| Metamorphosis of InP self-organized islands and the two-dimensional distribution modified by mismatched GaInP buffer layers |
| 001A08 |
| Growth of heavily Zn-doped InGaAs at low temperature by LP-MOCVD |
| 001A24 |
| Effects of V/III ratio on InGaAs and InP grown at low temperature by LP-MOCVD |
| 001A26 |
| Effect of trimethylgallium flow on the structural and optical properties of InGaN/GaN multiple quantum wells |
| 001A34 |
| Crack-free InAlGaN quaternary alloy films grown on Si(1 1 1) substrate by metalorganic chemical vapor deposition |
| 001A91 |
| Very Low Threshold Current Operation of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes |
| 001B43 |
| Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method |
| 001B98 |
| Growth temperature effect on the optical and material properties of AlxInxGa1-x-yN epilayers grown by MOCVD |
| 001B99 |
| Growth of nanoscale InGaN self-assembled quantum dots |
| 001C18 |
| Effects of TMIn flow rate of barrier layer on the optical and structural properties of InxGa1-xN/InyGa1-yN multiple quantum wells |
| 001D18 |
| The structure and current-voltage characteristics of multi-sheet InGaN quantum dots grown by a new multi-step method |
| 001D84 |
| Effect on the optical properties and surface morphology of cubic GaN grown by metalorganic chemical vapor deposition using isoelectronic indium surfactant doping |
| 001E10 |
| A new method to fabricate InGaN quantum dots by metalorganic chemical vapor deposition |
| 001F11 |
| Preparation of indium tin oxide films and doped tin oxide films by an ultrasonic spray CVD process |
| 001F86 |
| Stimulated-emission spectra of high-indium-content InGaN/GaN multiple-quantum-well structures |
| 002072 |
| Relaxation mechanism of GaP/InGaAlP/GaAs heterostructure |
| 002194 |
| The optical and electrical studies of hydrogen passivation in GaInP/GaAs heterostructures |
| 002316 |
| An elucidation of solid incorporation of InGaN grown by metalorganic vapor phase epitaxy |
| 002317 |
| 650 nm AlGaInP/GaInP compressively strained multi-quantum well light emitting diodes |
| 002318 |
| 0.66 μm InGaP/InGaAlP single quantum well microdisk lasers |
| 002321 |
| High-temperature and low-threshold-current operation of 1.5 μm AlGaInAs/InP strain-compensated multiple quantum well laser diodes |
| 002323 |
| Electrical characteristics of heterostructure-emitter bipolar transistors using spacer layers |
| 002332 |
| Optical modes within III-nitride multiple quantum well microdisk cavities |
| 002421 |
| Carbon doped 980nm InGaAs strained quantum well lasers grown by metalorganic chemical-vapor deposition |
| 002449 |
| Bistable GaAs-InGaP triangular-barrier optoelectronic switch |
| 002467 |
| Controllable drain cut-in voltage with strong negative differential resistance in GaAs/InGaAs real-space transfer heterostructure |
| 002589 |
| Study of GaInAsSb epilayer by scanning electron acoustic microscopy |
| 002633 |
| Critical layer thickness in metal organic chemical vapor deposition grown InGaAs/GaAs strained quantum wells |
| 002650 |
| Solid-liquid and solid-vapor equilibrium of Ga-In-As-Sb system and artificial neural network prediction |
| 002659 |
| Study on symmetry forbidden transitions in an InxGa1-xAs/GaAs single quantum well by temperature dependence |
| 002663 |
| Characteristics of a δ -doped GaAs/InGaAs p-channel heterostructure field-effect transistor |
| 002679 |
| Characteristics of δ -doped InGaAs/GaAs pseudomorphic double-quantum-well high electron mobility transistors |
| 002688 |
| A new InP-based heterojunction bipolar transistor utilizing an In0.53Al0.22Ga0.25As base |
| 002709 |
| Metalorganic chemical vapor deposition of GaxIn1-xSb ternary alloys |
| 002724 |
| Effect of V/III ratio on the electrical and optical properties of Si-doped AlGaInP grown by metalorganic chemical vapor deposition |
| 002726 |
| Critical layer thickness in MOCVD grown InGaAs-GaAs strained quantum wells |
| 002740 |
| Study of indium antimonide metal-oxide-semiconductor structure prepared by direct photochemical-vapor deposition |
| 002762 |
| Mobility enhancement in double δ-doped GaAs/InxGa1-xAs/GaAs pseudomorphic structures by grading the heterointerfaces |
| 002772 |
| Secondary-ion mass spectrometry analysis in pseudomorphic GaAs/InGaAs/GaAs heterostructures utilizing a δ-doping superlattice |
| 002773 |
| Influences of δ -doping time and spacer thickness on the mobility and two-dimensional electron gas concentration in δ -doped GaAs/InGaAs/GaAs pseudomorphic heterostructures |
| 002774 |
| Deposition of gallium oxide and indium oxide on GaAs for in situ process use by alternating supply of TEGa, TMIn, and H2O2 as surge pulses |
