| Ident. | Authors (with country if any) | Title |
|---|
| 000008 |
| Surface state and optical property of sulfur passivated InP |
| 000117 |
| Room-temperature pulsed laser deposition and dielectric properties of amorphous Bi3.95Er0.05Ti3O12 thin films on conductive substrates |
| 000149 |
| Photoluminescence properties of porous InP filled with ferroelectric polymers |
| 000165 |
| Obvious improvement of light extraction obtained by anodic aluminum oxide coverage on GaN surface |
| 000187 |
| Less contribution of nonradiative recombination in ZnO nails compared with rods |
| 000209 |
| Influence of GaAs(0 01 ) pregrowth surface morphology and reconstruction on the growth of InGaAs layers |
| 000267 |
| Electrochemical growth and characterization of CdTe nanorod arrays |
| 000378 |
| Temperature dependent lasing characteristics of InAs/InP(100) quantum dot laser |
| 000539 |
| Experimental comparison of characteristics of magnetic-field-enhanced InAs and InSb Dember terahertz emitters pumped at 1550 nm wavelength |
| 000659 |
| Top Transmission Grating GaN LED Simulations for Light Extraction Improvement |
| 000670 |
| The photocurrent modulation of quantum dot resonant tunneling diode with forward bias voltage |
| 000720 |
| Self-assembled InAs/GaAs quantum dot molecules with InxGa1- xAs strain-reducing layer |
| 000726 |
| Red electroluminescence of diamond thin films |
| 000764 |
| Optical spectroscopy of lanthanides doped in wide band-gap semiconductor nanocrystals |
| 000768 |
| Optical bistability in GaInAsP/InP coupled-circular resonator microlasers |
| 000812 |
| InP-based deep-ridge NPN transistor laser |
| 000827 |
| Hot-electron induced degradations in GaN-based LEDs fabricated on nanoscale epitaxial lateral overgrown layers |
| 000830 |
| High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD |
| 000831 |
| High-power 1.25 μm InAs QD VECSEL based on resonant periodic gain structure |
| 000931 |
| Controlled synthesis of Cadmium-Free CuInS2/ZnS Quantum Dots |
| 000935 |
| Comparison between two types of photonic-crystal cavities for single-photon emitters |
| 000956 |
| Air-annealing effects on SiO2/ITO coating |
| 000991 |
| The refractive nonlinearities of InAs/GaAs quantum dots above-bandgap energy |
| 000A00 |
| The effect of an electric field on the nonlinear response of InAs/GaAs quantum dots |
| 000A03 |
| The Application of ALD Process on Special Fiber |
| 000A50 |
| Scanning capacitance microscopy characterization on diffused p-n junctions of InGaAs/InP infrared detectors |
| 000A58 |
| Quantum dot multi-wavelength comb lasers with Si ring resonator |
| 000A69 |
| Photoluminescence investigation of InAs quantum dots in quantum well with different strain reducing layer |
| 000A80 |
| Optical bistability in InP/InAlGaAs multi-quantum-well semiconductor ring lasers |
| 000B00 |
| Long rectangle resonator 1550 nm AlGaInAs/InP lasers |
| 000B12 |
| Investigation on multiple-port microcylinder lasers based on coupled modes |
| 000B94 |
| Effects of different nanostructural ZnS films on the characteristics of organic/inorganic heterostructure devices |
| 000C28 |
| Analysis on the high luminous flux white light from GaN-based laser diode |
| 000C32 |
| An InP based wide gain spectrum asymmetric quantum wells for large scale optoelectronic monolithic integration |
| 000C79 |
| Theoretical study of InGaAsP-InP active microring |
| 000D22 |
| Study on Polarization Dependency of InAs Quantum Dot Coupled InGaAsP Quantum Well SOA |
| 000D42 |
| Simulation of a 1550 nm InGaAsP-InP transistor laser |
| 000D44 |
| Room temperature continuous-wave electrically-injected InGaAsP triangle and square microlasers |
| 000D59 |
| Preparation of Bi2S3 thin films with a nanoleaf structure by electrodeposition method |
| 000D64 |
| Preparation and characterization of polyaniline/indium(III) oxide (PANi/In2O3) nanocomposite thin film |
| 000D65 |
| Preparation and characterization of high contrast electrophoretic display suspension containing charged black-and-white nanoparticles |
| 000D76 |
| Photochemical growth of cadmium-rich CdS nanotubes at the air-water interface and their use in photocatalysis |
| 000D88 |
| Optical bistability in InP/GaInAsP equilateral- triangle-resonator microlasers |
| 000D94 |
| Nonlinearities of PIN Photodiodes and PSPICE simulation |
| 000D95 |
| Noncontact evaluation of nondoped InP wafers by terahertz time-domain spectroscopy : TERAHERTZ WAVE PHOTONICS |
| 000E32 |
| InP nanowires with various morphologies formed by Au-assisted metal-organic chemical vapor deposition |
| 000E49 |
| Growth and photorefractive properties of near-stoichiometric In:Fe:Cu:LiNbO3 crystals |
| 000E64 |
| Finite Element Analysis of the InP Nano Inner Cladding Fiber |
| 000E75 |
| Fabrication and modulation characteristics of 1.3 μm p-doped InAs quantum dot vertical cavity surface emitting lasers |
| 000E77 |
| Fabrication and Characterization of 1.3-μm InAs Quantum-Dot VCSELs and Monolithic VCSEL Arrays |
| 000F45 |
| Calculation of Exciton Energy in InAs/InP Self-assembled Semiconductor Quantum Wires |
| 000F62 |
| A study of two-step growth and properties of In0.82Ga0.18As on InP |
| 000F65 |
| A ridge width varied two-section index-coupled DFB self-pulsation laser with a wide continuously tunable frequency range |
| 000F77 |
| 1.3-μm InAs Quantum Dot Vertical Cavity Surface Emitting Lasers with Planar Electrodes Configuration |
| 000F99 |
| The impact of imperfect symmetry on band edge modes of a two-dimensional photonic crystal with square lattice |
| 001006 |
| The characterization and properties of InN grown by MOCVD |
| 001034 |
| Strain relaxation and surface morphology of high indium content InAlAs metamorphic buffers with reverse step |
| 001038 |
| Single Dipole Mode Photonic Crystal Laser on InGaAsP/InP QW Waveguide Slab |
| 001040 |
| Simulation of multimode interference couplers with deep rib structure and tunable power splitting ratio |
| 001043 |
| Self-pulsation in a two-section DFB laser with a varied ridge width |
| 001047 |
| SBS slow light using a novel optical fibre doped with nano-particles |
| 001052 |
| Properties of Au/Pt/Ti contact to p-InP by rapid thermal processing |
| 001077 |
| Optical waveguide properties of single indium oxide nanofibers |
| 001078 |
| Optical transitions of InAs/In0.36Ga0.64As/GaAs(311B) surface quantum dots clearly identified by the piezoreflectance technique |
| 001093 |
| Mode behavior in triangle and square microcavities |
| 001097 |
| Micro-cylinder mode in photonic quasicrystal observed by near-field optical microscopy |
| 001125 |
| Hydrostatic pressure effects on impurity states in InAs/GaAs quantum dot |
| 001133 |
| High Uniformity InGaAs Linear Mesa-type SWIR Focal Plane Arrays |
| 001165 |
| Electroluminescence from ZnO nanowires with a p-ZnO film/n-ZnO nanowire homojunction |
| 001190 |
| Dispersion of the nano-lnP Doped Fiber |
| 001191 |
| Directional emission InP/GaInAsP square-resonator microlasers |
| 001198 |
| Design and Fabrication of 2×2 InP/InGaAsP Optical Switch |
| 001225 |
| Analysis on the frequency band of ultra-wide-band electromagnetic radiation from photoconductive semiconductor switches |
| 001246 |
| 256×1 Element Linear InGaAs Short Wavelength near-Infrared Detector Arrays |
| 001330 |
| Photoluminescence of InP nanocrystals embedded in silica gel-glasses as a function of temperature, and excitation power |
| 001363 |
| Long-wavelength VCSELs for optical networks and trace-gas monitoring |
| 001375 |
| Improvement on the photorefractive performance by the insertion of a SiO2 blocking layer |
| 001395 |
| Gated-mode integrated Single photon detector for telecom wavelengths |
| 001402 |
| Fabrication and characteristics of silica optical fiber doped with InP nano-semiconductor material |
| 001404 |
| Experimental and numerical study on AlGaInAs/AlGaAs distributed feedback lasers with GaInP gratings |
| 001405 |
| Equilateral-triangle-resonator injection lasers with directional emission |
| 001410 |
| Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction |
| 001458 |
| Design and Fabrication of High-Performance InGaAsP/InP Electroabsorption Modulator |
| 001486 |
| Anisotropic growth of indium antimonide nanostructures |
| 001494 |
| A Novel Optical Fibre Doped with the Nano-material as InP |
| 001506 |
| Transparent conductive In2O3:Mo thin films prepared by reactive direct current magnetron sputtering at room temperature |
| 001507 |
| Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots |
| 001527 |
| Synthesis and structures of morphology-controlled ZnO nano- and microcrystals |
| 001542 |
| Structure, electrical and optical properties of N-In codoped ZnO thin films prepared by ion-beam enhanced deposition method |
| 001544 |
| Structural, textural and photocatalytic properties of quantum-sized In2S3-sensitized Ti-MCM-41 prepared by ion-exchange and sulfidation methods |
| 001573 |
| Photoelectric properties of ZnO:In nanorods/SiO2/Si heterostructure assembled in aqueous solution |
| 001582 |
| Optical and local current studies on InAs/GaAs quantum dots |
| 001589 |
| Narrow stripe selective growth of InGaAlAs waveguides used for buried heterostructure lasers |
| 001591 |
| Monolithic integration of electroabsorption modulator and DFB laser for 10-Gb/s transmission |
| 001621 |
| Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties |
| 001622 |
| Growth of In2O3 single-crystalline film on sapphire (0001) substrate by molecular beam epitaxy |
| 001636 |
| Evolution of mosaic structure in InN grown by metalorganic chemical vapor deposition |
| 001638 |
| Energetics of the growth mode transition in InAs/GaAs(001) small quantum dot formation : A first-principles study |
| 001658 |
| Effect of GaAs(1 0 0) 2° surface misorientation on the formation and optical properties of MOCVD grown InAs quantum dots |
| 001660 |
| Double-source approach to In2S3 single crystallites and their electrochemical properties |
| 001674 |
| Crack control in GaN grown on silicon (111) using in doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition |
| 001679 |
| Characterization of SnS films prepared by constant-current electro-deposition |
| 001681 |
| Catalytic growth of In2O3 nanobelts by vapor transport |
| 001699 |
| Vacuum annealing effects on properties of ITO films prepared by reactive low voltage ion plating technique |
| 001701 |
| Time-dependent transport properties in quantum well with thin inserted layer |
| 001711 |
| The effect of a combined InAlAs and GaAs strained buffer layer on the structure and optical property of InAs quantum dots |
| 001726 |
| Surface morphology of GaInP buffer layers and its impact on the lateral distribution of self-organized InP islands |
| 001735 |
| Structural and optical properties of InAs/GaAs quantum dots emitting at 1.5μm |
| 001740 |
| Size-controllable growth of Single crystal In(OH)3 and In2O3 nanocubes |
| 001749 |
| Quantum and transport scattering times in modulation-doped AlxGa1-xN/GaN single quantum wells |
| 001783 |
| Low-temperature growth of InN by MOCVD and its characterization |
| 001787 |
| Investigation into the effect of LiF at the organic interface on electroluminescence |
| 001790 |
| Influence of the low temperature buffer layer on InP epitaxial growth on GaAs substrates |
| 001800 |
| In situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy |
| 001813 |
| Growth and characterization of InN on sapphire substrate by RF-MBE |
| 001826 |
| Electrochemical deposition and characterization of wide band semiconductor ZnO thin film |
| 001831 |
| Effect of the low-temperature buffer thickness on quality of insb grown on GaAs substrate by molecular beam epitaxy |
| 001832 |
| Effect of layer thickness of immiscible alloy In0.52Al0.48As on the morphology of InAs nanostructure grown on In0.52Al0.48As/InP (001) |
| 001843 |
| Construction and photoluminescence of In2O3 nanotube array by CVD-template method |
| 001853 |
| Annealing effect on optical properties of ZnO films fabricated by cathodic electrodeposition |
| 001859 |
| Ab initio molecular-dynamics simulations of liquid GaSb and InSb |
| 001923 |
| Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy |
| 001924 |
| The synthesis of In, In2O3 nanowires and In2O3 nanoparticles with shape-controlled |
| 001930 |
| The fabrication of self-aligned InAs nanostructures on GaAs(331)A substrates |
| 001931 |
| The electrical properties and the interfaces of CU2O/ZnO/ITO p-i-n heterojunction |
| 001935 |
| Synthesis of metastable hexagonal In2O3 nanocrystals by a precursor-dehydration route under ambient pressure |
| 001942 |
| Study on the perfection of in situ P-injection synthesis LEC-InP single crystals |
| 001949 |
| Studies on microstructure bilayer film of ultrasonic dipped cadmium sulfide and d.c. sputtered indium tin oxide |
| 001963 |
| Relatively large electric-field induced electron drift velocity observed in an InxGa1-xAs-based p-i-n semiconductor nanostructure |
| 001970 |
| Photoluminescence study of InGaN/GaN quantum dots grown on passivated GaN surface |
| 001975 |
| Optical property of self-assembled InAs quantum dots in Al0.5Ga0.5As barriers grown by molecular beam epitaxy |
| 001977 |
| Optical characteristics of InAs quantum dots capped with short period GaAs/InAs superlattices and InGaAs combination layers |
| 001978 |
| Optical and electrical properties of InN thin films grown by reactive magnetron sputtering |
| 001984 |
| Micro-raman study of hexagonal InN thin films grown by reactive sputtering on GaAs |
| 001987 |
| MOVPE growth of grade-strained bulk InGaAs/InP for broad-band optoelectronic device applications |
| 001A23 |
| Effects of indium doping on the properties of AlAs/GaAs quantum wells and inverted AlGaAs/GaAs two-dimensional electron gas |
| 001A25 |
| Effects of TMIn flow on the interface and optical properties of InGaN/GaN mutiple quantum wells |
| 001A26 |
| Effect of trimethylgallium flow on the structural and optical properties of InGaN/GaN multiple quantum wells |
| 001A29 |
| Dislocation scattering in a two-dimensional electron gas of an AlxGa1-xN/GaN heterostructure |
| 001A42 |
| Annealing ambient controlled deep defect formation in InP |
| 001A45 |
| An approach to determine the chemical composition in InGaN/GaN multiple quantum wells |
| 001A47 |
| A novel transparent pn+ junction based on indium tin oxides |
| 001A50 |
| 1310 nm AlGaInAs-InP polarization insensitive multiple quantum well optical amplifier |
| 001B37 |
| Subbands transport of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures |
| 001B41 |
| Structures of indium oxide nanobelts |
| 001B51 |
| Role of different cap layers tuning the wavelength of self-assembled InAs/GaAs quantum dots |
| 001B60 |
| Piezoelectric coefficient of InN thin films prepared by magnetron sputtering |
| 001B71 |
| Ohmic contact and interfacial reaction of Ti/Al/Pt/Au metallic multi-layers on n-AlxGa1-xN/GaN heterostructures |
| 001B80 |
| Manipulation of spin dephasing in InAs quantum wires |
| 001B91 |
| In0.25Ga0.75As films growth on the thin GaAs/AlAs buffer layer on the GaAs(0 0 1) substrate |
| 001B92 |
| Improved performance of 1.3 μm InGaAsP-InP lasers with an AlInAs electron stopper layer |
| 001C20 |
| Effect of surface treatments on Schottky contact on n-AlxGa1-xN/GaN heterostructures |
| 001C22 |
| Effect of electron-phonon interaction on surface states in zinc-blende GaN, AlN, and InN under pressure |
| 001C26 |
| Designing two-dimensional electron gas in AlGaN/InGaN/GaN heterostructures through the incorporated InGaN layer |
| 001C29 |
| Deep level transient spectroscopy of vertically stacked InAs/Al0.5Ga0.5As self-assembled quantum dots |
| 001D13 |
| Tuning of exciton-photon coupling in a planar semiconductor microcavity by applying hydrostatic pressure |
| 001D17 |
| The structures, electronic states and properties in liquid Ga-Sb and In-Sb systems |
| 001D19 |
| The mechanism of blueshift in excitation-intensity-dependent photoluminescence spectrum of nitride multiple quantum wells |
| 001D39 |
| Research of spatial resolution in external electro-optic probing |
| 001D60 |
| Interband impact ionization in THz-driven InAs/AlSb heterostructures |
| 001D68 |
| Growth-dependent phonon characteristics in InN thin films |
| 001D77 |
| Excitonic photoluminescence properties of nanocrystalline GaSb and Ga0.62In0.38Sb embedded in silica films |
| 001E09 |
| A new van Pauw disk to enhance geometric magnetoresistance at room temperature |
| 001E11 |
| 19F NMR chemical shielding for metal fluorides MF2(M = Zn, Cd, Pb), MF3 (M = Al, Ga, in) and SnF4 |
| 001F05 |
| Size dependence of non-linear optical properties of SiO2 thin films containing InP nanocrystals |
| 001F08 |
| Resonant tunneling through energy states of InAs quantum dots in GaAs metal-semiconductor diode structures |
| 001F09 |
| Quasi RT-CW operation of InGaAs/InGaAsP strained quantum well lasers |
| 001F14 |
| Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer |
| 001F20 |
| Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures |
| 001F23 |
| Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0≤x≤0.3) layer |
| 001F34 |
| InAs self-assembled quantum dots on GaAs/InP by low-pressure metal-organic chemical vapour deposition |
| 001F42 |
| High-power, low-beam-divergence 980 nm laser arrays with nonabsorbing facets |
| 001F50 |
| Experimental investigation of photoluminescence dynamics of cavity polaritons under nonresonant excitation |
| 001F61 |
| Detection of efficient carrier capture in ultrathin InAs/GaAs layers using a degenerate pump-probe technique |
| 001F64 |
| Damage profiles and damage annealing behavior in Al0.168Ga0.348In0.484P/GaAs implanted with 200 keV Zn+ ions |
| 001F73 |
| Analysis of room temperature PL spectra of InAs/GaAs/InP and InAs/InP self-assembled QDs : A five-band study |
| 002044 |
| X-ray photoelectron and Raman spectroscopy of nanocrystalline Ga0.62In0.38Sb-SiO2 composite films |
| 002052 |
| Time-resolved measurement of surface band bending of cleaved GaAs(110) and InP(110) by high resolution XPS |
| 002053 |
| The structural and photoluminescence properties of self-organized quantum dots in InAs/In0.53 Ga0.47 As multilayer on InP substrate |
| 002057 |
| Temperature dependence of the optical properties of InAs/GaAs self-organized quantum dots with bimodal size distribution |
| 002059 |
| Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers |
| 002081 |
| Photoluminescence in Si and Be directly doped self-organized InAs/GaAs quantum dots |
| 002101 |
| H-vacancy complex VInH4 abundance and its influences in n-type LEC InP |
| 002104 |
| Gas source molecular beam epitaxy of InP-based microstructures : material growth, characterization and device applications |
| 002109 |
| Electronic characteristics of InAs/GaAs self-assembled quantum dots by deep level transient spectroscopy |
| 002113 |
| Electrical resistivity and absolute thermopower of liquid GaSb and InSb alloys |
| 002116 |
| Effects of interdiffusion on the luminescence of InAs/GaAs quantum dots covered by InGaAs overgrowth layer |
| 002119 |
| Effect of thin GaAs tensile-strained layer on InAs quantum dots on InP (001) substrate grown by LP-MOVPE |
| 002121 |
| Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes |
| 002134 |
| Carrier mobility distribution in annealed undoped LEC InP material |
| 002135 |
| Carrier capture into InAs/GaAs quantum dots detected by a simple degenerate pump-probe technique |
| 002137 |
| Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy |
| 002139 |
| An investigation of the optical spectra and EPR parameters of vanadium in III-V semiconductors (GaAs, GaP, InP) |
| 002211 |
| Wavelength tuning in GaAs/AlGaAs quantum wells by InAs submonolayer insertion |
| 002212 |
| Vacancies and negative ions in as-grown and ion-bombarded p-InP(Zn) observed by positron annihilation |
| 002213 |
| Using the tensile stress field to control quantum dot arrangements |
| 002217 |
| Transparent conducting CeO2-SiO2 thin films |
| 002219 |
| Theoretical studies of the g factor of V3+ in III-V semiconductors |
| 002224 |
| The analysis of the performance for P-p-n and N-n-p hetero- and homojunction GaSb/Ga0.8In0.2As0.19Sb0.81 photodetectors |
| 002225 |
| Temperature and time dependence of the density of molten indium antimonide measured by an improved Archimedean method |
| 002227 |
| Synthesis and structure of indium oxide nanoparticles dispersed within pores of mesoporous silica |
| 002229 |
| Study of overgrowth heterostructure InSb/GaAs by scanning electron acoustic microscopy |
| 002233 |
| Structural and optical characterization of InAs nanostructures grown on high-index InP substrates |
| 002234 |
| Structural and optical characteristics of self-organized InAs quantum dots grown on GaAs (3 1 1)A substrates |
| 002238 |
| Size quantization effects in InAs self-assembled islands on InP(0 0 1) at the onset of 2D-to-3D transition |
| 002239 |
| Si doping effect on self-organized InAs/GaAs quantum dots |
| 002240 |
| Self-organization of wire-like InAs nanostructures on InP |
| 002241 |
| Self-organization of the InGaAs/GaAs quantum dots superlattice |
| 002242 |
| Self-assembled InAs and In0.9Al0.1As quantum dots on (0 0 1)InP substrates grown by molecular beam epitaxy (MBE) |
| 002245 |
| RHEED characterization of InAs/GaAs grown by MBE |
| 002251 |
| Photovoltaic spectroscopy studies of strained InGaAs/GaAs quantum wells |
| 002260 |
| Nanosecond laser annealing of zinc-doped indium phosphide |
| 002267 |
| InAs/In0.52Al0.48As quantum wire structure with the specific layer-ordering orientation on InP(0 0 1) |
| 002283 |
| Effect of growth interruption on the optical properties of InAs/GaAs quantum dots |
| 002289 |
| A safe low temperature route to InAs nanofibers |
| 002345 |
| Vacancies and impurities in InP studied using positron lifetime and an improved Doppler-broadening spectrometer |
| 002346 |
| Triclinic deformation and anisotropic strain relaxation of an InAs film on a GaAs(0 0 1) substrate measured by a series of symmetric double crystal X-ray diffraction |
| 002347 |
| Threshold reduction in strained-layer InGaAs/GaAs quantum well lasers by liquid phase epitaxy regrowth |
| 002348 |
| Thermal properties of high-power InGaAsP/InP stripe-geometry laser diode : calculation and analyses |
| 002349 |
| Thermal activation and thermal transfer of localized excitons in InAs self-organized quantum dots |
| 002357 |
| Spontaneously ordered InAs self-assembled quantum dots grown on GaAs/InP substrate |
| 002358 |
| Single-lobe operation of BA InGaAsP/GaAs SCH SQW lasers |
| 002361 |
| Pressure behaviour of photoluminescence from InAs submonolayer in GaAs matrix |
| 002362 |
| Preparation and optical properties of a SiO2 film containing In0.2Ga0.8As nanocrystals by radio-frequency magnetron co-sputtering |
| 002363 |
| Preparation and optical absorption of InSb microcrystallites embedded in SiO2 thin films |
| 002367 |
| Photoluminescence of InAs self-organized quantum dots formation on InP substrate by MOCVD |
| 002368 |
| Photoluminescence from InAs quantum dots on GaAs(100) |
| 002369 |
| Photoexcited carrier diffusion dependence of differential reflection dynamics in InAsxP1-x/InP (x ≤ 0.35) strained-multiple-quantum wells |
| 002372 |
| Optical properties and resonant modes in GaN/AlGaN and InGaN/GaN multiple quantum well microdisk cavities |
| 002374 |
| Optical anisotropy of InAs submonolayer quantum wells in a (311)GaAs matrix |
| 002375 |
| Optical absorption spectra of coupled quantum wires InAsxP1-x/InP |
| 002376 |
| Operating characteristics of InGaAsP/GaAs SCH SQW high power lasers by LPE |
| 002378 |
| Novel In0.49Ga0.51P./(In)GaAs/GaAs p-type modulation doped heterostructure grown by gas source molecular beam epitaxy |
| 002386 |
| Linewidth in microdisk laser |
| 002388 |
| Investigation of 980nm GaInAs/GaAs/GaInP QW high power lasers |
| 002391 |
| InAs quantum dots in InAlAs matrix on (0 0 1)InP substrates grown by molecular beam epitaxy |
| 002397 |
| High-power BA Al-free InGaAsP/GaAs SCH SQW lasers |
| 002399 |
| High power 980 nm InGaAs/GaAs/AlGaAs window structure lasers fabricated by impurity-free vacancy diffusion |
| 002400 |
| High performance 1.55μm InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method |
| 002402 |
| Growth of InAs nanocrystals embedded in SiO2 films by radio-frequency magnetron cosputtering |
| 002404 |
| Growth and transport properties of InAs thin films on GaAs |
| 002410 |
| Evidence of multimodal patterns of self-organized quantum dots |
| 002413 |
| Effects of growth temperature on highly mismatched InAs grown on GaAs substrates by MBE |
| 002414 |
| Effects of growth interruption on self-assembled InAs/GaAs islands |
| 002421 |
| Carbon doped 980nm InGaAs strained quantum well lasers grown by metalorganic chemical-vapor deposition |
| 002424 |
| Annealing behavior of InAs/GaAs quantum dot structures |
| 002426 |
| Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy |
| 002429 |
| Alignment of threading dislocations in the In0.3Ga0.7As/GaAs superlattice |
| 002433 |
| 808nm Al-free InGaAsP/GaAs SCH SQW lasers fabricated by LPE |
| 002435 |
| 1.3μm InGaAsP/InP strained layer multi-quantum-well complex-coupled distributed feedback laser |
| 002475 |
| Wafer direct bonding of compound semiconductors and silicon at room temperature by the surface activated bonding method |
| 002476 |
| Two kinds of crystalline state of InSb epilayers on GaAs substrates by metalorganic chemical vapor deposition |
| 002490 |
| Study of GSMBE growth and characteristics of high-quality strained In0.63Ga0.37As/InP quantum wells |
| 002492 |
| Structural study of GaSb, InSb melts with XAFS technique |
| 002495 |
| Scanning tunneling microscopy of III-V compound semiconductor (001) surfaces |
| 002498 |
| Optical limiting properties of In2O3 nanoparticles under cw laser illumination |
| 002506 |
| Investigation of dislocations and traps in MBE grown p-InGaAs/GaAs heterostructures |
| 002508 |
| Initial interface reaction in indium/amorphous selenium multilayer thin films |
| 002510 |
| Growth of high-quality relaxed In0.3Ga0.7As/GaAs superlattices |
| 002518 |
| Electroluminescence from ITO/SiO2/Ta2O5/Al multiple-layer structure excited by hot electrons |
| 002519 |
| Electrodeposition and characterization of thallium(III) oxide films |
| 002526 |
| Characteristics of InAs epilayers for Hall effect devices grown on GaAs substrates by MBE |
| 002531 |
| Asymmetric stark shifts of exciton in InAs/GaAs pyramidal quantum dots |
| 002585 |
| The fabrication of dipped CdS and sputtered ITO thin films for photovoltaic solar cells |
| 002587 |
| The effect of nonparabolicity on electron transport in semiconductor thin films |
| 002588 |
| The effect of III-V ratio at the substrate surface on the quality of InP grown by GSMBE |
| 002592 |
| Scattering mechanisms of charge carriers in transparent conducting oxide films |
| 002599 |
| Parametric study on lattice-matched and pseudomorphic InGaAs/InAlAs/InP modulation-doped heterostructures grown by GSMBE |
| 002601 |
| Optimization of the deposition process parameters for preparation of In2O3 films by reactive evaporation of indium metal |
| 002609 |
| Iron-doped semi-insulating InP grown by chloride VPE with nitrogen mixed with hydrogen as carrier gas |
| 002611 |
| Investigation of strain-compensated InGaAs(P)/InGaAs(P)/InP multiple quantum well structures grown by LP-MOVPE |
| 002615 |
| Identification of vacancy-type defects in As-grown InP by positron annihilation rate distribution measurements |
| 002617 |
| GSMBE growth and PL investigation of lattice-matched InGaAs/InP quantum wells |
| 002622 |
| Characterization of deep centers in AlGaAs/InGaAs/GaAs pseudomorphic HEMT structures grown the molecular beam epitaxy and hydrogen treatment |
| 002693 |
| Valence-band lineups at highly strained Si-InP, Ge-InAs, and Si-Ge interfaces |
| 002694 |
| Twinning in LEC-grown InP crystal |
| 002696 |
| Subpicosecond dynamics spectra in InGaAs/GaAs strained-layer and strained quantum well |
| 002701 |
| Room-temperature excitons in strained InGaAs/GaAs quantum wells |
| 002703 |
| Photomodulated transmission spectroscopy of InxGa1-xAs/GaAs MQWs under hydrostatic pressure |
| 002705 |
| Parity and Wannier-Stark localization in type-II superlattices |
| 002713 |
| Hot-electron magneto-transport in narrow-gap semiconductors in quantum magnetic field |
| 002714 |
| Hot electron high-frequency mobility in wide- and narrow-gap semiconductors |
| 002721 |
| Exciton line broadening in strained InGaAs/GaAs single quantum wells |
| 002722 |
| Effect of persistent photoconductivity on photoconductivity spectra in Ga×In1-×P/InP:Fe (× < 0.18) |
| 002726 |
| Critical layer thickness in MOCVD grown InGaAs-GaAs strained quantum wells |
| 002728 |
| Characterization of InxGa1-xAs/InP epilayers by X-ray double crystal rocking curve peak profile analysis |
| 002730 |
| Analysis of dopant distributions in LEC-InP |
| 002731 |
| An InGaAs-GaAs strained layer single quantum-well ring laser with a reactive ion-etched tetragonal cavity |
| 002732 |
| Alkaline polishing of InP using double-pouring technique |
| 002765 |
| Photoluminescence studies of interstitial Zn in InP due to rapid thermal annealing |
| 002774 |
| Deposition of gallium oxide and indium oxide on GaAs for in situ process use by alternating supply of TEGa, TMIn, and H2O2 as surge pulses |
| 002775 |
| Comparing reactive ion etching of III-V compounds in Cl2/BCl3/Ar and CCl2F2/BCl3/Ar discharges |
| 002781 |
| The Hall factor of hot-electron transport in non-parabolic Kane bands |
| 002782 |
| The Fermi-edge singularity in CdTe/Cd1-xMnxTe:In multiple quantum wells |
| 002789 |
| Optical studies of strained InGaAs/GaAs single quantum wells |
| 002800 |
| Effects of electron-interface-phonon interactions on interactions between electrons in double-heterostructures |
| 002808 |
| X-ray characterization of strain relaxation in InGaAs/GaAs strained-layer superlattices |
| 002810 |
| Wannier-Stark localization in InGaAs/GaAs superlattices and its application to electro-optical devices |
| 002820 |
| Structure of InxGa1-xAs/GaAs strained-layer superlattices |
