| Ident. | Authors (with country if any) | Title |
|---|
| 000024 |
| Improved performance of lateral GaN-based light emitting diodes with novel buried CBL structure in ITO film and reflective electrodes |
| 000158 |
| Performance Enhancement of Blue InGaN Light-Emitting Diodes With InGaN Barriers and Dip-Shaped Last Barrier |
| 000219 |
| Improving photovoltaic performance of dye-sensitized solar cell by downshift luminescence and p-doping effect of Gd2O3:Sm3+ |
| 000222 |
| Improved photovoltaic performance of InGaN/GaN solar cells with optimized transparent current spreading layers |
| 000225 |
| Improved Quantum Efficiency in Semipolar (1101) InGaN/GaN Quantum Wells Grown on GaN Prepared by Lateral Epitaxial Overgrowth |
| 000228 |
| Impact Ionization in Absorption, Grading, Charge, and Multiplication Layers of InP/InGaAs SAGCM APDs With a Thick Charge Layer |
| 000263 |
| Enhanced output power of (indium) gallium nitride light emitting diodes by a transparent current spreading-film composed of a disordered network of indium tin oxide nanorods |
| 000326 |
| An improved model for InP/InGaAs double heterojunction bipolar transistors |
| 000371 |
| The experimental investigation on dark current for InGaAs-InP avalanche photodiodes |
| 000428 |
| Quasi-Axial GRIN Lens Implemented in Wedge-Shaped Fiber Coupling With InP-Based PLC |
| 000500 |
| Improving Light Output of Vertical-Stand-Type InGaN Light-Emitting Diodes Grown on a Free-Standing GaN Substrate With Self-Assembled Conical Arrays |
| 000643 |
| A Combined Model With Electrothermal Coupling and Electromagnetic Simulation for Microwave Multifinger InP-Based DHBTs |
| 000740 |
| Preparation and properties of Ni/InGaN/GaN Schottky barrier photovoltaic cells |
| 000792 |
| Long Wavelength Multiple Resonant Cavities RCE Photodetectors on GaAs Substrates |
| 000813 |
| InP Lateral Overgrowth Technology for Silicon Photonics |
| 000819 |
| In situ photoelectrocatalytic generation of bactericide for instant inactivation and rapid decomposition of Gram-negative bacteria |
| 000838 |
| High power GaN-based LEDs with nano-structured Ga-doped ZnO (GZO) transparent conductive layer (TCL) |
| 000863 |
| Extrinsic Base Surface Passivation in Terahertz GaAsSb/InP DHBTs Using InGaAsP Ledge Structures |
| 000891 |
| Electrical properties of stacking electrodes for flexible crystalline semiconductor photonic devices |
| 000896 |
| Efficiency droop behavior of GaN-based light emitting diodes under reverse-current and high-temperature stress |
| 000897 |
| Effects of sodium sulfamate on electrodeposition of Cu(In,Ga)Se2 thin film |
| 000905 |
| Effect of contact spreading layer on photovoltaic response of InGaN-based solar cells |
| 000922 |
| Dependence of the Property of InGaN p-i-n Solar Cells on the Light Concentration and Temperature |
| 000972 |
| 100 Gb/s RZ-OOK transmission through 212 km deployed SSMF using monolithically integrated ETDM receiver module |
| 000975 |
| ZnO nanorods on ZnO seed layer derived by sol-gel process |
| 000A28 |
| Supported indium oxide as novel efficient catalysts for dehydrogenation of propane with carbon dioxide |
| 000A68 |
| Photovoltaic Effects of InGaN/GaN Double Heterojunctions With p-GaN Nanorod Arrays |
| 000A71 |
| Photoelectrochemical Characterization of a Robust TiO2/BDD Heterojunction Electrode for Sensing Application in Aqueous Solutions |
| 000B02 |
| Light-splitting photovoltaic system utilizing two dual-junction solar cells |
| 000B28 |
| Improved light extraction of GaN-based light-emitting diodes by ITO patterning with optimization design |
| 000B38 |
| High Brightness GaN Light Emitting Diodes with Different Barrier Widths in Quantum Wells for General Lighting Application |
| 000B43 |
| Free-standing GaN-based LEDs with ALD-Al2O3/Si substrate removed by wet etching |
| 000B55 |
| Fabrication of blue and green non-polar InGaN/GaN multiple quantum well light-emitting diodes on LiAIO2(100) substrates |
| 000B56 |
| Fabrication of CuO/ZnO composite films with cathodic co-electrodeposition and their photocatalytic performance |
| 000B88 |
| Electric-agitation-enhanced photodegradation of rhodamine B over planar photoelectrocatalytic devices using a Ti02 nanosized layer |
| 000C15 |
| Dehydrogenation of propane over In2O3-Al2O3 mixed oxide in the presence of carbon dioxide |
| 000D10 |
| Synthesis and characterization of novel InVO4-TiO2 thin films using the low temperature sol |
| 000D57 |
| Promotional mechanism of tungstation on selective catalytic reduction of NOx by methane over In/WO3/ZrO2 |
| 000D85 |
| Optical properties studies in InGaN/GaN multiple-quantum well |
| 000E24 |
| Influence of a p-InGaN/GaN short-period superlattice on the performance of GaN-based light-emitting diodes |
| 000E36 |
| Improved light extraction of GaN-based light-emitting diodes with surface-patterned ITO |
| 000E65 |
| Fiber-coupled near-infrared single-photon spectrum analyzer based on a InGaAs/InP avalanche photodiode single-photon detector |
| 000F26 |
| Design and Fabrication of Multichannel Tunable Photodetector Array |
| 000F30 |
| Dark current simulation of InP/In0.53Ga0.47As/InP p-i-n photodiode |
| 000F31 |
| Cyclic voltammetry study of electrodeposition of Cu(In,Ga)Se2 thin films |
| 000F59 |
| Advanced InP Technology for High Performance 40 Gb/s (RZ-) DQPSK Transponder |
| 000F85 |
| Urea-based hydrothermal growth, optical and photocatalytic properties of single-crystalline In(OH)3 nanocubes |
| 000F88 |
| Ultracompact directional couplers realized in InP by utilizing feature size dépendent etching |
| 001018 |
| Surface-recombination-free InGaAs/InP HBTs and the base contact recombination |
| 001022 |
| Superluminescent Diode Monolithically Integrated with Novel Y-Branch by Bundle Integrated Waveguide for Fiber Optic Gyroscope |
| 001035 |
| Strain Engineered Quantum Dots for Long Wavelength Emission |
| 001046 |
| Selective Catalytic Reduction of NOx with CH4 over the In/Sulfated TiO2 Catalyst |
| 001087 |
| Narrow line-width resonant cavity enhanced photodetectors operating at 1.55 μm |
| 001122 |
| Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching |
| 001210 |
| Common-base multi-finger submicron InGaAs/InP double heterojunction bipolar transistor with fmax of 305 GHz |
| 001216 |
| Cathodoluminescence study of GaN-based film structures |
| 001226 |
| Analysis and Simulation of Process Parameters for Epitaxy of InP-based Compound Semiconductor Materials |
| 001350 |
| Multiplication Characteristics of InP/InGaAs Avalanche Photodiodes with Thick Multiplication and Charge Layers |
| 001409 |
| Enhanced output of flip-chip light-emitting diodes with a sidewall reflector |
| 001457 |
| Design and Fabrication of a Novel Monothically Integrated Dual-Wavelength Tunable Photodetector |
| 001500 |
| Wavelength-selective photodetectors operating at long wavelength |
| 001512 |
| Theoretical study of phase separation in wurtzite InGaN |
| 001553 |
| Simulation of InGaN/GaN multiple quantum well light-emitting diodes with quantum dot model for electrical and optical effects |
| 001557 |
| Role of deep traps in carrier generation and transport in differently doped InP wafers |
| 001559 |
| Recent advances in photonic integrated circuits |
| 001561 |
| Quadratic electro-optic effects and electro-absorption process in InGaN/GaN cylinder quantum dots |
| 001590 |
| Multiplication characteristics of InP/InGaAs avalanche photodiodes with a thicker charge layer |
| 001596 |
| Long wavelength integrated optical demultiplexing and receiving device based on one-mirror-inclined three-mirror cavity structure |
| 001618 |
| High performance of gated-mode single-photon detector at 1.55 μm |
| 001644 |
| Electron irradiation-induced defects in InP pre-annealed at high temperature |
| 001662 |
| Direct wafer bonding technology employing vacuum-cavity pre-bonding |
| 001689 |
| Analysis and optimization of an InGaAsP/InP waveguide variable optical attenuator |
| 001695 |
| 10Gbps zero-chirp compact transmitter with InP MQW mach-zehnder modulator |
| 001722 |
| Synthesis and characterization InP and Ga2O3 nanowires |
| 001741 |
| Simulation of InP-based monolithically integrated PIN-HEMT front-end optical receiver |
| 001799 |
| InAs/GaAs quantum-dot superluminescent diodes with 110 nm bandwidth |
| 001802 |
| Improved analytical method for determination of small-signal equivalent-circuit model parameters for InP/InGaAs HBTs |
| 001808 |
| High-performance InP-based resonant cavity enhanced photodetector based on InP/air-gap Bragg reflectors |
| 001852 |
| Applications of ICP in optoelectronic device fabrication |
| 001861 |
| A practical method of suppressing photovoltaic noise in Fe : LiNbO3 |
| 001869 |
| 980 nm high power strained quantum well lasers array fabricated by MBE |
| 001988 |
| MOVPE growth and fabrication of 1.3 μm high power InGaAsP-InP polarization-insensitive superluminescent diodes with complex strained quantum wells |
| 001A14 |
| Fabrication and complete characterization of polarization insensitive 1310 nm InGaAsP-InP quantum-well semiconductor optical amplifiers |
| 001A31 |
| Design of a resonant-cavity-enhanced GaInAsSb/GaSb photodetector |
| 001B30 |
| The effects of (NH4)2S passivation treatments on the dark current-voltage characteristics of InGaAsSb PIN detectors |
| 001B89 |
| InGaN/GaN MQW high brightness LED grown by MOCVD |
| 001B95 |
| High-performance enhancement-mode pseudomorphic InGaP/InGaAs/GaAs HEMT structures by gas source molecular beam epitaxy |
| 001B97 |
| High performances of InP/InGaAs heterojunction bipolar transistors with a δ-doped sheet between two spacer layers |
| 001C42 |
| Analysis of the detectivity for triple-layer heterojunction GaSb/GaInAsSb infrared detectors |
| 001C53 |
| 1.55 μm AlGaInAs/InP polarization-insensitive optical amplifier with tensile strained wells grown by MOCVD |
| 001D46 |
| Phase matching pseudo-resonant tunable InP-based MOEMS |
| 001D72 |
| Formation and charge control of a quantum dot by etched trenches and multiple gates |
| 001D73 |
| Fabrication of high-brightness blue InGaN/GaN MQW LEDs |
| 001E08 |
| A novel application to quantum dot materials to the active region of superluminescent diodes |
| 001E95 |
| Surface micromachining techniques in InP based micro-opto-electro-mechanical system |
| 001F13 |
| Photonic-sensitive InAlGaAs/InP negative-differential-resistance heterojunction bipolar transistor |
| 001F37 |
| Hysteresis in current transport in a GaAs diode containing self-assembled InAs quantum dots |
| 001F53 |
| Electrolyte electroreflectance spectroscopy studies on the interfacial behavior of the near-surface In0.15Ga0.85As/GaAs quantum well electrode|non-aqueous electrolyte |
| 002141 |
| An InP-based monolithic integration of 1.55um MQW laser diode and HBT driver circuit |
| 002284 |
| Effect of erbium concentration on upconversion luminescence of Er:Yb :phosphate glass exited by InGaAs laser diode |
| 002379 |
| New method for the growth of highly uniform quantum dots |
| 002392 |
| In0.2Ga0.8As/GaAs quantum well laser with C doped cladding and ohmic contact layers |
| 002396 |
| Hydrothermal preparation and characterization of nanocrystalline powder of β-indium sulfide |
| 002407 |
| Growth and characterization of InGaAs/InAlAs/InP high-electron-mobility transistor structures towards high channel conductivity |
| 002434 |
| 1.55 μm InGaAsP/InP partially gain-coupled distributed feedback laser / electroabsorption modulator integrated device for trunk line communication |
| 002479 |
| The linear and nonlinear optical properties of nanometer-sized In2O3 organosol |
| 002503 |
| Lapping technique of InP single crystal wafer |
| 002507 |
| Intersubband absorption from In0.26Ga0.74As/GaAs quantum dot superlattice |
| 002511 |
| Grid-pattern aligned InAs self-assembled quantum dots grown on InP substrate |
| 002512 |
| GaAs-InP heteroepitaxy and GaAs-InP MESFET fabrication by MOVPE |
| 002600 |
| PIN avalanche photodiodes model for circuit simulation |
| 002623 |
| Catalytic oxidation of InP |
| 002707 |
| Molecular beam epitaxial growth, characterization and performance of high-detectivity GaInAsSb/GaSb PIN detectors operating at 2.0 to 2.6 μm |
| 002715 |
| High-barrier Pt/Al/n-InP diode |
| 002719 |
| GaInAsSb/GaSb infrared photodetectors prepared by MOCVD |
| 002777 |
| b and its temperature dependence are the important criteria of the reliability of semiconductor lasers |
| 002788 |
| Piezoelectric field effect transistor (PEFET) using In0.2Ga0.8As/Al0.35Ga0.65As/In0.2Ga0.8As/GaAs strained layer structure on (111)B GaAs substrate |
| 002805 |
| An improved approach and experimental results of a low-frequency noise measurement technique used for reliability estimation of diode lasers |
