| Ident. | Authors (with country if any) | Title |
|---|
| 000074 |
| The structural, elastic and thermoelectric properties of Fe2VAl at pressures |
| 000076 |
| The electronic and optical properties of indium doped zinc oxide nanosheets |
| 000077 |
| The electronic and optical properties of InGaN-based solar cells alloys: First-principles investigations via mBJLDA approach |
| 000147 |
| Physical Mechanism of Surface Roughening of the Radial Ge-Core/Si-Shell Nanowire Heterostructure and Thermodynamic Prediction of Surface Stability of the InAs-Core/GaAs-Shell Nanowire Structure |
| 000171 |
| N-doped rutile TiO2 nano-rods show tunable photocatalytic selectivity |
| 000175 |
| Model for the formation energy of In-N clusters and their effect on the energy band gap of the Ga-rich and As-rich InxGa1-xNyAs1-y semiconductor alloys |
| 000253 |
| First principles calculations for band-gap energy properties of non-polar and semi-polar ternary nitride alloys under in-plane strain |
| 000283 |
| Effect of ion doping in different sites on the morphology and photocatalytic activity of BiFeO3 microcrystals |
| 000297 |
| Density functional theory study the effects of point defects in β-In2S3 |
| 000301 |
| Controlled synthesis of nitrogen-doped binary and ternary TiO2 nanostructures with enhanced visible-light catalytic activity |
| 000303 |
| Controllable preparation of WO3 nanorod arrays by hydrothermal method |
| 000324 |
| Analysis of Nonradiative Carrier Recombination Processes in InN Films by Mid-infrared Spectroscopy |
| 000352 |
| Wetting layers effect on InAs/GaAs quantum dots |
| 000357 |
| UV- and Visible-Light Photocatalytic Activity of Simultaneously Deposited and Doped Ag/Ag(I)-TiO2 Photocatalyst |
| 000379 |
| Temperature dependent empirical pseudopotential theory for self-assembled quantum dots |
| 000419 |
| Self-consistent simulation of carrier confinement characteristics in (AlyGa1-yN/AlN)SLs/GaN/(InxGa1-xN/GaN)MQW/GaN heterostructures |
| 000443 |
| Physical, optical, electronic properties and mobility measurements of a new donor-acceptor-donor oligomer |
| 000485 |
| Interfacial Charge Carrier Dynamics of the Three-Component In2O3-TiO2-Pt Heterojunction System |
| 000499 |
| In assisted realization of p-type C-doped ZnO: A first-principles study |
| 000527 |
| First-principles studies of structural, mechanical, electronic, optical properties and pressure-induced phase transition of CuInO2 polymorph |
| 000530 |
| Finite barrier width effects on exciton states and optical properties in wurtzite InGaN/GaN quantum well |
| 000548 |
| Enhanced doping efficiency of the remotely p-doped InAs/InP core-shell nanowires: A first principles study |
| 000584 |
| Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices |
| 000713 |
| Spin splitting modulated by uniaxial stress in InAs nanowires |
| 000740 |
| Preparation and properties of Ni/InGaN/GaN Schottky barrier photovoltaic cells |
| 000802 |
| Interface effect on the electronic structure and optical properties of InAs/GaSb superlattices |
| 000825 |
| Improving color rendering of Y3Al5O12:Ce3+ white light-emitting diodes based on dual-blue-emitting active layers |
| 000855 |
| Ferromagnetic properties of Cu-doped ZnS: A density functional theory study |
| 000A55 |
| Recent advances and challenges for successfu p-type control of InN films with Mg acceptor doping by molecular beam epitaxy |
| 000B36 |
| High-pressure structural and electronic properties of InN |
| 000B70 |
| Energy band alignment between Pb(Zr,Ti)O3 and high and low work function conducting oxides-from hole to electron injection |
| 000B73 |
| Electronic structures and optical properties of Cu1-xNaxInSe2 by first-principle calculations |
| 000B74 |
| Electron localization and emission mechanism in wurtzite (Al, In, Ga)N alloys |
| 000B89 |
| Elastic properties and electronic structures of antiperovskite-type InNCo3 and InNNi3 |
| 000C35 |
| Ab initio study of electronic structures of InAs and GaSb nanowires along various crystallographic orientations |
| 000C87 |
| The effects of indium segregation on the valence band structure and optical gain of GaInAs/GaAs quantum wells |
| 000C94 |
| The Al-doping contents dependence of the crystal growth and energy band structure in Al:ZnO thin films |
| 000C99 |
| Synthesis, crystal structure and optical properties of an indium phosphate K3In3P4O16 |
| 000D14 |
| Syntheses, crystal and electronic structures of two new lead indium phosphates: Pb2In4P6O23 and Pb2InP3O11 |
| 000E53 |
| Growth and characterization of CuInSe2 thin films prepared by successive ionic layer adsorption and reaction method with different deposition temperatures |
| 000E83 |
| Energy band calculation of amorphous indium tin oxide films on polyethylene terephthalate substrate with indirect transition |
| 000E89 |
| Electronic and optical properties of orthorhombic LiInS2 and LiInSe2: A density functional theory investigation |
| 000F48 |
| Band Engineering in Strained GaN/ultrathin InN/GaN Quantum Wells |
| 000F99 |
| The impact of imperfect symmetry on band edge modes of a two-dimensional photonic crystal with square lattice |
| 001050 |
| Pseudo-potential band structure calculation of InSb ultra-thin films and its application to assess the n-metal-oxide-semiconductor transistor performance |
| 001056 |
| Preparation of CuInSe2 thin films by pulsed laser deposition the Cu-In alloy precursor and vacuum selenization |
| 001062 |
| Piezoresistivity in GaAs/InxGa1-xAs/AlAs superlattice structures |
| 001082 |
| Novel Photonic Crystal Structure GaN-based Light-emitting Diodes |
| 001161 |
| Electronic structures and optical properties of wurtzite type LiBSe2 (B = Al, Ga, In) : A first-principles study |
| 001192 |
| Direct observation of coherent spin transfer processes in an InGaAs/GaAs quantum well via two-color time-resolved Kerr rotation measurements |
| 001265 |
| The high mobility InN film grown by MOCVD with GaN buffer layer |
| 001304 |
| Spin-orbit splitting-dependent quadratic electro-optic effect in InGaN/GaN quantum wells |
| 001310 |
| Shape-controlled synthesis and optical characterization of chalcopyrite CuInS2 micro structures |
| 001314 |
| Reactive flux syntheses, crystal structures and band gaps of AInS2 (A = Rb, Cs) |
| 001406 |
| Enhancement of light extraction of GaN light-emitting diode using opals layer |
| 001415 |
| Energy band alignment of an In2O3: Mo/Si heterostructure |
| 001419 |
| Electronic structure and photocatalytic properties of In6WO12 |
| 001420 |
| Electronic band structures and transport properties of wurtzite indium nitride grown by metalorganic vapor phase epitaxy |
| 001481 |
| Atomistic approach to thickness-dependent bandstructure calculation of InSb UTB |
| 001508 |
| Thermoelectric properties of p-type pseudo-binary (Ag0.365Sb0.558Te)x-(Bi0.5Sb1.5Te3)1- x (x = 0-1.0) alloys prepared by spark plasma sintering |
| 001526 |
| Synthesis, characterization, and photocatalytic properties of InVO4 nanoparticles |
| 001530 |
| Synthesis and crystal structure of a new Zintl phase Sr5In2Bi6 |
| 001571 |
| Photoluminescence characteristics of low indium composition InGaN thin films grown on sapphire by metalorganic chemical vapor deposition |
| 001643 |
| Electronic structure and g factors of narrow-gap zinc-blende nanowires and nanorods |
| 001672 |
| Crystal structures of alkali-metal indium (III) phosphates of [M3In(PO4)2]N (M = K, n = 10; M = Rb, n = 2) compounds, and band structures and chemical bond properties of [Rb3In(PO4)2]2 crystal |
| 001673 |
| Critical point transitions of wurtzite indium nitride |
| 001736 |
| Stability and electronic structure of single-walled InN nanotubes |
| 001751 |
| Preparation, structures, and band gaps of RbInS2 and RbInSe2 |
| 001771 |
| One-dimensional tunable photonic crystals by means of external magnetic fields |
| 001776 |
| Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 μm (InyGa1-yAs/GaAs1-xSbx)/GaAs bilayer quantum wells |
| 001931 |
| The electrical properties and the interfaces of CU2O/ZnO/ITO p-i-n heterojunction |
| 001A29 |
| Dislocation scattering in a two-dimensional electron gas of an AlxGa1-xN/GaN heterostructure |
| 001A55 |
| Electronic properties of GaAs/GayIn1-yNxAs1-y-xSby superlattices |
| 001A56 |
| Comparison of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes with/without GaInAsP and AIGaInAs Graded-Composition Layers |
| 001A87 |
| AlGaInP Light Emitting Diode with a Modulation-Doped Superlattice |
| 001A90 |
| Surface band-bending effects on the optical properties of indium gallium nitride multiple quantum wells |
| 001A91 |
| Very Low Threshold Current Operation of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes |
| 001C26 |
| Designing two-dimensional electron gas in AlGaN/InGaN/GaN heterostructures through the incorporated InGaN layer |
| 001C40 |
| Atomic and electronic structure of (√3 x √3)R 30°: In phase on Cu(111) |
| 001C45 |
| Accurate interband-energy measurements from Ellipsometric spectra |
| 001C61 |
| Strong Screening Effect of Photo-Generated Carriers on Piezoelectric Field in In0.13Ga0.87N/In0.03Ga0.97N Quantum Wells |
| 001C72 |
| Ab initio studies of structural stability and magnetism in Ni3In |
| 001D72 |
| Formation and charge control of a quantum dot by etched trenches and multiple gates |
| 001E18 |
| Deep Hole Traps Created by Gamma-Ray Irradiation of GaInP |
| 001E19 |
| Correlation of Photoreflectance Spectra with Performance of GaInP/GaAs Heterojunction Bipolar Transistors |
| 001F30 |
| Influence of wavelength detuning on device performance of electroabsorption modulator integrated distributed feedback lasers based on identical epitaxial layer approach |
| 001F62 |
| Design of the active structure of high-performance 1.55-μm In1-x-yGayAlxAs strained MQW lasers |
| 001F68 |
| Band-structure and optical gain for InAsp/In(GaAs)P MQW laser structures |
| 001F69 |
| Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers |
| 002002 |
| Ellipsometric Study of the Optical Properties of InGaAsN Layers |
| 002005 |
| Anomalous Phosphorus Cracker Temperature-Dependent Photoluminescence Spectra of InGaP Grown by Solid Source Molecular Beam Epitaxy |
| 002012 |
| Magneto-Photoluminescence Study of InGaAs/GaAs Quantum Wells and Quantum Dots Grown on (111)B GaAs Substrate |
| 002026 |
| Strain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wire |
| 002104 |
| Gas source molecular beam epitaxy of InP-based microstructures : material growth, characterization and device applications |
| 002117 |
| Effects of distance between wells on band structure and characteristics of InGaAs/InGaAsP strain-compensated multiple quantum well lasers |
| 002161 |
| Strain effect on the band structure of InAs/GaAs quantum dots |
| 002310 |
| Erratum: Strain dependence of hole mass and optical anisotropy in (110) quantum wells [J. Appl. Phys. 82, 5711 (1997)] |
| 002375 |
| Optical absorption spectra of coupled quantum wires InAsxP1-x/InP |
| 002427 |
| Analysis and optimization of 1.55 μm InGaAs/InGaAsP strained multiple quantum well lasers |
| 002437 |
| Strain dependence of hole mass and optical anisotropy in (110) quantum wells |
| 002438 |
| kp finite-difference method: Band structures and cyclotron resonances of AlxGa1-xSb/InAs quantum wells |
| 002456 |
| The calculation and the photoluminescence characterization of energy levels in a strained GaAs/In0.2Ga0.8As/GaAs quantum well heterostructure for the application of light-emitting real-space transfer devices |
| 002480 |
| The electronic structure of AlyGaxIn1-x-yAs alloys and related heterojunctions |
| 002527 |
| Characteristic analysis of InGaAs/InGaAsP strained quantum well lasers |
| 002574 |
| Observation of double cyclotron resonance in modulation-δ-doped In0.52Al0.48As/In0.53Ga0.47As heterostructure by optical detection |
| 002576 |
| A proposal for determination of band offset at a semiconductor heterojunction |
| 002587 |
| The effect of nonparabolicity on electron transport in semiconductor thin films |
| 002629 |
| Optical investigation of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells |
| 002631 |
| Persistent-photoconductivity effect in δ-doped Al0.48In0.52As/Ga0.47In0.53As heterostructures |
| 002639 |
| Photoluminescence of ordered Ga0.5In0.5P grown by metalorganic vapor phase epitaxy |
| 002644 |
| Observation of spin-splitting crossing between subbands in the optically detected cyclotron-resonance spectra of In0.53Ga0.47As/In0.52Al0.48As heterojunctions |
| 002662 |
| Band gap of ''completely disordered'' Ga0.52In0.48P |
| 002671 |
| Photomodulated reflectance spectra of In0.2Ga0.8As/GaAs single quantum wells |
| 002675 |
| Ab initio studies on the electronic structures of strained-layer superlattices (InAs)n(InP)n(001), (n = 1-5) |
| 002685 |
| Second subband population in δ-doped Al0.48In0.52As/Ga0.47In0.53As heterostructures |
| 002692 |
| Valence-band offset at InxGa1-xAs/GaAs heterojunctions under different strain conditions |
| 002713 |
| Hot-electron magneto-transport in narrow-gap semiconductors in quantum magnetic field |
| 002735 |
| Hole subband in p-type channel of semiconductor heterostructures |
| 002738 |
| Absorption spectroscopy studies of strained InGaAs/GaAs single-quantum wells |
| 002742 |
| Proposal of interband tunneling structures with strained layers |
| 002746 |
| Flat band current-voltage-temperature method for band-discontinuity determination and its application to strained InxGa1-xAs/In0.52Al0.48As heterostructures |
| 002749 |
| Electronic properties of AlxGa1-xSb/InAs quantum wells |
| 002768 |
| Band-structure effects in AlSb-InAs-AlSb double-barrier structures |
| 002831 |
| Interaction in a chemisorption system of the submonolayer Cs on the InP(110) substrate |
| 002860 |
| Oxygen in InxGa1-xAsyP1-y Grown on GaAs |
| 002916 |
| Transport properties in δ-doping of InP |
| 002920 |
| Pressure dependence of photoluminescence in Inx Ga1-xAs/GaAs strained quantum wells |
| 002931 |
| Electron subbands and wave functions of type-I and type-II quasiperiodic semiconductor superlattices |
| 002939 |
| The electronic band-structures of the superlattices (Ga0.47In0.53As)m/(InP)m (110) with m=1-25 |
| 002951 |
| A study of two-photon interband magnetoabsorption in n-InSb |
| 002977 |
| Study of CuInS grown by the traveling-heater method by electrolyte electroreflectance |
