| Ident. | Authors (with country if any) | Title |
|---|
| 000015 |
| Performance improvement of oxide thin-film transistors with a two-step-annealing method |
| 000038 |
| Characterizations of chemical bath-deposited zinc oxysulfide films and the effects of their annealing on copper-indium-gallium-selenide solar cell efficiency |
| 000108 |
| Solution-processed indium gallium zinc oxide thin-film transistors with infrared irradiation annealing |
| 000133 |
| Preparation of CuInSe2 thin films by selenization of co-sputtered Cu-In precursors using rapid thermal processing : Solar Energy Generation and Energy Storage |
| 000166 |
| Observation, morphology evolution and elimination of Te inclusions in CdZnTe:In single crystals |
| 000175 |
| Model for the formation energy of In-N clusters and their effect on the energy band gap of the Ga-rich and As-rich InxGa1-xNyAs1-y semiconductor alloys |
| 000188 |
| Large energy band-gap tuning of 980 nm InGaAs/InGaAsP quantum well structure via quantum well intermixing |
| 000204 |
| Influence of annealing temperature on the phase composition and optical properties of CuInS2 films |
| 000218 |
| In(OH)3 and In2O3 nanorice and microflowers: morphology transformation and optical properties |
| 000229 |
| ITO-free photovoltaic cell utilizing a high-resolution silver grid current collecting layer |
| 000238 |
| High quality of IWO films prepared at room temperature by reactive plasma deposition for photovoltaic devices |
| 000247 |
| Fluorine doping inducing high temperature ferromagnetism in (In1-xFex)2O3 |
| 000261 |
| Enhanced photovoltaic properties of solar cell based on ITO/PEDOT:PSS/ZnO:P3HT/Ag by an annealing treatment |
| 000277 |
| Effects of Ge Dopant on Thermoelectric Properties of Barium and Indium Double-Filled p-Type Skutterudites |
| 000282 |
| Effect of sputtering power and annealing temperature on the properties of indium tin oxide thin films prepared from radio frequency sputtering using powder target |
| 000284 |
| Effect of in situ annealing on the performance of spray coated polymer solar cells |
| 000302 |
| Controlled crystallization of β-In2S3 in 65GeS2.25In2S3.10CsCl chalcohalide glass |
| 000325 |
| An optimized In-CuGa metallic precursors for chalcopyrite thin films |
| 000341 |
| A model for the spectral blueshift caused by the In-N clusters in InxGa1-xNyAs1-y (x < 0.4 and y≤0.04) after annealing |
| 000348 |
| 13.6%-efficient Cu(In,Ga)Se2 solar cell with absorber fabricated by RF sputtering of (In,Ga)2Se3 and CuSe targets |
| 000365 |
| The suppression and recovery of martensitic transformation in a Ni-Co-Mn-In magnetic shape memory alloy |
| 000368 |
| The model parameter extraction and simulation for the effects of gamma irradiation on the DC characteristics of InGaP/GaAs single heterojunction bipolar transistors |
| 000387 |
| Synthesis of CuInSe2 thin film by a hydroxides-based deposition process |
| 000389 |
| Synthesis and thermoelectric properties of In0.2+xCo4Sb12+x composite |
| 000405 |
| Structural and optical studies of ZnS nanocrystal films prepared by sulfosalicylic acid (C7H6O6S)-assisted galvanostatic deposition with subsequent annealing |
| 000409 |
| Solution-processed vanadium oxide as a hole collection layer on an ITO electrode for high-performance polymer solar cells |
| 000434 |
| Properties of different temperature annealed Cu(In,Ga)Se2 and Cu(In,Ga)2Se3.5 films prepared by RF sputtering |
| 000439 |
| Positron annihilation study on CuInSe2 solar cell thin films |
| 000443 |
| Physical, optical, electronic properties and mobility measurements of a new donor-acceptor-donor oligomer |
| 000470 |
| Magnetically separable γ-Fe2O3@SiO2@Ce-doped TiO2 core-shell nanocomposites: Fabrication and visible-light-driven photocatalytic activity |
| 000476 |
| Low-Voltage High-Stability Indium-Zinc Oxide Thin-Film Transistor Gated by Anodized Neodymium-Doped Aluminum |
| 000490 |
| Influence of structural relaxation on wetting behavior of molten In-Sn alloy on Cu40Zr44Al8Ag8 bulk metallic glass |
| 000505 |
| Hybrid influences of defect dipole and intrinsic inducing field on orientation of PbTiO3 thin film deposited on Indium Tin Oxide/glass substrate |
| 000518 |
| Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth |
| 000531 |
| Ferromagnetism induced by oxygen-vacancy complex in (Mn, in) codoped ZnO |
| 000568 |
| Effects of hydrothermal annealing on characteristics of CuInS2 thin films by SILAR method |
| 000569 |
| Effects of air annealing on the structure, resistivity, infrared emissivity and transmission of indium tin oxide films |
| 000572 |
| Effects of Excess Sb on Thermoelectric Properties of Barium and Indium Double-Filled Iron-Based p-Type Skutterudite Materials |
| 000575 |
| Effect of vacuum-annealing on the d0 ferromagnetism of undoped In2O3 films |
| 000578 |
| Effect of Target Density on Microstructural, Electrical, and Optical Properties of Indium Tin Oxide Thin Films |
| 000621 |
| Annealing of indium-doped CdMnTe single crystals under Cd vapors |
| 000698 |
| Synthesis and characterization of Er3+ doped CaF2 nanoparticles |
| 000703 |
| Study of molecular-beam epitaxy growth on patterned GaAs ( 1 0 0) substrates by masked indium ion implantation |
| 000722 |
| Room temperature magnetic properties of ZnO nanostructured films |
| 000739 |
| Preparation of Cu(In,Ga)Se2 thin films by pulse electrodeposition |
| 000755 |
| Oxygen annealing for deuterium-doped indium tin oxide thin films |
| 000779 |
| Modulation of surface-enhanced Raman spectra by depth selective excitation of embedded indium tin oxide nanoisland arrays |
| 000782 |
| Microstructure analysis of sol-gel-derived nanocrystalline ITO thin films |
| 000809 |
| Influence of a Barrier Layer on the Formation of AuBe Ohmic Contact With the p-GaAs Bases of Heterojunction Bipolar Transistors |
| 000833 |
| High-Temperature Thermoelectric Properties of Co4Sb12-Based Skutterudites with Multiple Filler Atoms: Ce0.1InxYbyCo4Sb12 |
| 000851 |
| Formation of CuInSe2 from Cu2Se and In2Se3 compounds |
| 000890 |
| Electrical properties of vacuum-annealed titanium-doped indium oxide films |
| 000902 |
| Effects of Annealing on Structural and Electrical Properties of CulnSe2 Thin Films Prepared by Hybrid Sputtering/Evaporation Processes |
| 000907 |
| Effect of buffer layer annealing temperature on the crystalline quality of In0.82Ga0.18As layers grown by two-step growth method |
| 000932 |
| Controllable synthesis and field emission enhancement of Al2O3 coated In2O3 core-shell nanostructures |
| 000933 |
| Control of ferromagnetism in Fe-doped In2O3 by carbothermal annealing |
| 000983 |
| Towards high efficiency solution processable inverted bulk heterojunction polymer solar cells using modified indium tin oxide cathode |
| 000996 |
| The influence of annealing on electrochromic properties of Al-B-NiO thin films prepared by sol-gel |
| 000999 |
| The effect of post-annealing under CdCl2 atmosphere on the properties of ITO thin films deposited by DC magnetron sputtering |
| 000A52 |
| Room temperature Er3+ 1.54 μm electroluminescence from Si-rich erbium silicate deposited by magnetron sputtering |
| 000A66 |
| Preparation and Characterization of CuInSe2 Thin Films Derived by Electrodeposition Process for Solar Cells |
| 000A79 |
| Optical property analysis of CZT:In single crystals after annealing by a two-step method |
| 000B21 |
| Influence of annealing temperature on field emission from tetrapod-shaped ZnO-whisker films obtained by screen printing |
| 000B22 |
| Influence of annealing conditions on the structure and compositions of electrodeposited CuInSe2 films |
| 000B23 |
| Indium tin oxide thin films for silicon-based electro-luminescence devices prepared by electron beam evaporation method |
| 000B27 |
| In2O3 nanorod arrays grown at grain-boundary triple junctions of Cu-Sn alloy substrate |
| 000B93 |
| Effects of hydrogen annealing on the structural, optical and electrical properties of indium-doped zinc oxide films |
| 000C33 |
| Adjustment of the selenium amount during ion beam sputtering deposition of CIS thin films |
| 000C84 |
| The influence of alloy phases in the precursors on the selenization reaction mechanisms |
| 000C85 |
| The generation and stability of second-harmonic in electron-beam irradiated GeS2-In2S3-CdS chalcogenide glasses |
| 000D29 |
| Structural defects-mediated room-temperature ferromagnetism in Co-doped SnO2 insulating films |
| 000D53 |
| Quantum rings formed in InAs QDs annealing process |
| 000D87 |
| Optical properties of Eu3+ in transparent Y-Ti-O nanocrystallized sol-gel film |
| 000D89 |
| Optical and electrical characterization of α-InGaZnO thin film fabricated by pulsed laser deposition for thin film transistor applications |
| 000E29 |
| Indium tin oxide films prepared by atmospheric plasma annealing and their semiconductor-metal conductivity transition around room temperature |
| 000E81 |
| Enhanced electroluminescence of silicon-rich silicon nitride light-emitting devices by NH3 plasma and annealing treatment |
| 000E98 |
| Effects of annealing process on asymmetric coercivities of Mn-doped BiFe03 thin films |
| 000E99 |
| Effects of annealing process and Mn substitution on structure and ferroelectric properties of BiFeO3 films |
| 000F07 |
| Effect of annealing on electrical properties of InAsSb films grown on GaAs substrates by molecular beam epitaxy |
| 000F08 |
| Effect of UV-ozone treatment on ITO and post-annealing on the performance of organic solar cells |
| 000F92 |
| Transparent conductive Ta2O5-codoped ITO thin films prepared by different heating process |
| 001005 |
| The defect density of a SiNx /In0.53Ga0.47As interface passivated using (NH4)2Sx |
| 001024 |
| Study on the effect of In diffusion annealing on the electrical properties of CdZnTe by a transformation model |
| 001029 |
| Structure and electrical properties of CdIn2O4 thin films prepared by DC reactive magnetron sputtering |
| 001030 |
| Structural characterization of Mn implanted AlInN |
| 001071 |
| Pentacene thin-film transistors with sol-gel derived amorphous Ba0.6Sr0.4TiO3 gate dielectric |
| 001094 |
| Mn-including InAs quantum dots fabricated by Mn implantation |
| 001117 |
| Indium oxide thin film transistors via reactive sputtering using metal targets |
| 001127 |
| Hydrogen-assisted nitrogen-acceptor doping in ZnO |
| 001167 |
| Electrodeposited and selenized CIGS thin films for solar cells |
| 001180 |
| Effects of accumulated strain on the surface and optical properties of stacked 1.3 μm InAs/GaAs quantum dot structures |
| 001224 |
| Annihilation of deep level defects in InP through high temperature annealing |
| 001265 |
| The high mobility InN film grown by MOCVD with GaN buffer layer |
| 001327 |
| Photophysics and morphology investigation based on perylenetetracarboxylate/polymer photovoltaic devices |
| 001337 |
| Optical, structural, and magnetic properties of p-type InMnP: Zn implanted with the Mn (1 and 10 at.%) |
| 001376 |
| Improvement in performance of GaN-based light-emitting diodes with indium tin oxide based transparent ohmic contacts |
| 001388 |
| Heavily carbon-doped p-type InGaAs grown by gas source molecular beam epitaxy for application to heterojunction bipolar transistors |
| 001417 |
| Electronic transport of (In1- xFex)2O3- v magnetic semiconductor and Fe-In2O3 granular films in the presence of electronic screening |
| 001432 |
| Electrical and optical properties of ITO and ITO:Zr transparent conducting films |
| 001438 |
| Effects of substitution of Ti for Fe in BiFeO3 films prepared by sol-gel process |
| 001440 |
| Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD |
| 001455 |
| Determination of optical constants and thicknesses of In2O3:Sn films from transmittance data |
| 001463 |
| Crystal-originated particles in germanium-doped Czochralski silicon crystal |
| 001475 |
| Characteristics of ITO films fabricated on glass substrates by high intensity pulsed ion beam method |
| 001484 |
| Anomalous photoluminescence of InAs quantum dots implanted by Mn ions |
| 001594 |
| MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting |
| 001605 |
| Influence of annealing on principal photovoltaic parameters of perylenetetracarboxylate/MEH-PPV solar cells |
| 001631 |
| Fabrication and photoelectrochemical properties of porous ZnWO4 film |
| 001644 |
| Electron irradiation-induced defects in InP pre-annealed at high temperature |
| 001748 |
| Raman and photoluminescence studies on nanocrystalline ZnO grown on GaInPAs substrates |
| 001756 |
| Post-growth treatment effects on properties of CuInS2 thin films deposited by RF reactive sputtering |
| 001826 |
| Electrochemical deposition and characterization of wide band semiconductor ZnO thin film |
| 001849 |
| Changing planar thin film growth into self-assembled island formation by adjusting experimental conditions |
| 001853 |
| Annealing effect on optical properties of ZnO films fabricated by cathodic electrodeposition |
| 001856 |
| An experimental investigation of Zn diffusion into InP and InGaAs |
| 001862 |
| A novel transparent ohmic contact of indium tin oxide to n-type GaN |
| 001884 |
| Cluster size and composition variations in yellow and red light-emitting InGaN thin films upon thermal annealing |
| 001971 |
| Photoluminescence from InGaN/GaN MQWs on sapphire and membranes fabricated by laser lift-off |
| 001A12 |
| Femtosecond laser-induced crystallization in amorphous Sb-rich AgInSbTe films |
| 001A60 |
| Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31 |
| 001A72 |
| Properties of Cu/Au Schottky contacts on InGaP layer |
| 001A92 |
| Quantum-well-width dependencies of postgrowth thermal annealing effects of InGaN/GaN quantum wells |
| 001B68 |
| Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells |
| 001B71 |
| Ohmic contact and interfacial reaction of Ti/Al/Pt/Au metallic multi-layers on n-AlxGa1-xN/GaN heterostructures |
| 001B79 |
| Metastable hexagonal In2O3 nanofibers templated from InOOH nanofibers under ambient pressure |
| 001C62 |
| Metallic wafer bonding for the fabrication of long-wavelength vertical-cavity surface-emitting lasers |
| 001C69 |
| Deep levels in semi-insulating InP obtained by annealing under iron phosphide ambiance |
| 001C77 |
| Investigation of transparent and conductive undoped Zn2In2O5-x films deposited on n-type GaN layers |
| 001C81 |
| Photoluminescence study of hydrogen passivation in InAs1-xNx/InGaAs single-quantum well on InP |
| 001C92 |
| Quasiregular quantum-dot-like structure formation with postgrowth thermal annealing of InGaN/GaN quantum wells |
| 001D00 |
| Effect of composition inhomogeneity on the photoluminescence of InGaN/GaN multiple quantum wells upon thermal annealing |
| 001D31 |
| Study on fluorine-doped indium oxide films deposited by reactive evaporating in CF4/O2 gases |
| 001D45 |
| Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour |
| 001D97 |
| Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers |
| 001E22 |
| Effects of In and Ga interdiffusion on the optical gain of InGaN/GaN quantum well |
| 001E27 |
| Low-resistance and high-transparency Ni/indium tin oxide ohmic contacts to p-type GaN |
| 001E48 |
| Investigation of indium tin oxide/zinc oxide multilayer ohmic contacts to n-type GaN isotype conjunction |
| 001E49 |
| Effect of thermal annealing on high indium content InGaN/GaN single quantum well structures |
| 001E50 |
| Crystallization of Ag-In-Sb-Te Phase-Change Optical Recording Films |
| 001E72 |
| Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells |
| 001F64 |
| Damage profiles and damage annealing behavior in Al0.168Ga0.348In0.484P/GaAs implanted with 200 keV Zn+ ions |
| 001F74 |
| An effective way to detect the secondary phase in Sr-doped LaInO3 |
| 001F97 |
| X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices |
| 002009 |
| Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells |
| 002060 |
| Synchrotron radiation photoelectron spectroscopy study of ITO surface |
| 002134 |
| Carrier mobility distribution in annealed undoped LEC InP material |
| 002160 |
| Arsenic clusters on the surface of vertically aligned InAs islands on GaAs substrate by annealing |
| 002176 |
| Characterization of treated indium-tin-oxide surfaces used in electroluminescent devices |
| 002189 |
| Heteroepitaxy of germanium on Si(103) and stable surfaces of germanium |
| 002296 |
| Positron-lifetime study of compensation defects in undoped semi-insulating InP |
| 002312 |
| Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN |
| 002326 |
| Formation of PIn defect in annealed liquid-encapsulated Czochralski InP |
| 002415 |
| Effect of oxygen concentration and annealing treatment on the optical properties of the transparent conductive CdIn2O4 thin films |
| 002453 |
| Defects in metamorphic InxAl1-xAs (x<0.4) epilayers grown on GaAs substrates |
| 002465 |
| New aspects of K promoted nitridation of the InP(100) surface |
| 002537 |
| A comparative study of the thermal stability of the (103) surface of group-III-metal/group-IV-semiconductor systems |
| 002577 |
| Elimination of orientation domains and antiphase domains in the epitaxial films with chalcopyrite structure |
| 002603 |
| Optical and short-wavelength recording properties of In-Sb-Te phase change thin films |
| 002653 |
| Interfacial reactions of Ni-In and Ni/In/Ni ohmic contacts to n-GaAs |
| 002655 |
| A double metal structure Pt/Al/n-InP diode |
| 002657 |
| Annealing-induced near-surface ordering in disordered Ga0.5In0.5P |
| 002669 |
| Sulfide-assisted reordering at the InP surface and SiNx/InP interface |
| 002670 |
| Luminescence of low-temperature GaAs in a GaAs/In0.2Ga0.8As multiple quantum well structure |
| 002676 |
| Thin InSb films-A candidate for multiple recording |
| 002715 |
| High-barrier Pt/Al/n-InP diode |
| 002723 |
| Effect of annealing treatment on some properties of CdIn2O4 thin films |
| 002765 |
| Photoluminescence studies of interstitial Zn in InP due to rapid thermal annealing |
| 002780 |
| The effects of substrate bias and reactive gas partial pressure on the resistivity of sputtered ITO films |
| 002973 |
| Comparative high-resolution electron-energy-loss spectroscopy study of hydrogen adsorption on GaAs and InP (111) and (111) surfaces |
| 002981 |
| New phases in the phase transition in amorphous InSb films |
| 002986 |
| A LEED, ELS study of InP(100) surfaces prepared by phosphorus deposition and post-annealing |
