Serveur d'exploration sur l'Indium

Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.

Acceptor center And NotYONG ZHANG

List of bibliographic references

Number of relevant bibliographic references: 20.
Ident.Authors (with country if any)Title
000011 Structural effect on controllable resistive memory switching in donor-acceptor polymer systems
000090 Synthesis and photovoltaic properties of fluorene-based copolymers with pendent donor-acceptor units
000132 Preparation of a hybrid polymer solar cell based on MEH-PPV/ZnO nanorods : Solar Energy Generation and Energy Storage
000167 New wide-bandgap organic donor and its application in UVB sensors with high responsivity
000293 Donor-acceptor copolymers incorporating polybenzo [1,2-b:4,5-b']dithiophene and tetrazine for high open circuit voltage polymer solar cells
000295 Design and synthesis of indole-substituted fullerene derivatives with different side groups for organic photovoltaic devices
000324 Analysis of Nonradiative Carrier Recombination Processes in InN Films by Mid-infrared Spectroscopy
000339 A new donor-acceptor-donor ternary copolymer pending additional diketopyrrolopyrrole unit in the side of a donor for efficient solar cells
000370 The field emission of indium-doped ZnO films fabricated by room temperature DC magnetron sputtering
000A18 Synthesis and optical properties of N-In codoped ZnO nanobelts
000A42 Solution-processed hybrid bilayer photodetectors with rapid response to ultraviolet radiation
000A55 Recent advances and challenges for successfu p-type control of InN films with Mg acceptor doping by molecular beam epitaxy
000D46 Roles of sodium induced defects in CuInSe2 by first principles calculation
001127 Hydrogen-assisted nitrogen-acceptor doping in ZnO
001319 Properties of indium-doped ZnO films prepared in an oxygen-rich plasma
001856 An experimental investigation of Zn diffusion into InP and InGaAs
002830 Investigation of erbium doping of InGaAsP layers grown by liquid-phase epitaxy
002895 Tellurium and zinc doping in In0.32Ga0.68P layers grown by liquid-phase epitaxy
002922 Photoluminescence study of Si+- and Si+ + P+-implanted InP
002947 Improved activation in Si+ and P+ dually implanted InP

Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024