| Ident. | Authors (with country if any) | Title |
|---|
| 001192 |
| Direct observation of coherent spin transfer processes in an InGaAs/GaAs quantum well via two-color time-resolved Kerr rotation measurements |
| 001315 |
| Rapid photoluminescence quenching in GaInNAs quantum wells at low temperature |
| 001447 |
| Effect of electron-hole spatial correlation on spin relaxation dynamics in InAs submonolayer |
| 001970 |
| Photoluminescence study of InGaN/GaN quantum dots grown on passivated GaN surface |
| 001B84 |
| Localized exciton dynamics in AlInGaN alloy |
| 001B98 |
| Growth temperature effect on the optical and material properties of AlxInxGa1-x-yN epilayers grown by MOCVD |
| 002064 |
| Strong temperature dependence of photoluminescence properties in visible InAlAs quantum dots |
| 002135 |
| Carrier capture into InAs/GaAs quantum dots detected by a simple degenerate pump-probe technique |
| 002211 |
| Wavelength tuning in GaAs/AlGaAs quantum wells by InAs submonolayer insertion |
| 002283 |
| Effect of growth interruption on the optical properties of InAs/GaAs quantum dots |
| 002349 |
| Thermal activation and thermal transfer of localized excitons in InAs self-organized quantum dots |
| 002414 |
| Effects of growth interruption on self-assembled InAs/GaAs islands |
| 002424 |
| Annealing behavior of InAs/GaAs quantum dot structures |
| 002464 |
| Comment on High-efficiency energy up-conversion at GaAs-GaInP2 interfaces [Appl. Phys. Lett. 67, 2813 (1995)] |
| 002540 |
| Two-dimensional excitonic emission in InAs submonolayers |
| 002553 |
| Effective-mass theory for InAs/GaAs strained coupled quantum dots |
| 002554 |
| Carrier relaxation and thermal activation of localized excitons in self-organized InAs multilayers grown on GaAs substrates |
| 002923 |
| Photoluminescence excitation spectroscopy of InxGa1-xAs/GaAs strained-layer coupled double quantum wells |
