| Ident. | Authors (with country if any) | Title |
|---|
| 000149 |
| Photoluminescence properties of porous InP filled with ferroelectric polymers |
| 000351 |
| Wurtzite to zincblende transition of InN films on (011) SrTiO3 by decreasing trimethylindium flows |
| 000381 |
| Tailoring the in-plane epitaxial relationship of InN films on (1 11)SrTiO3 substrates by substrate pretreatment |
| 000997 |
| The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy |
| 000A05 |
| Temperature dependent photoluminescence of an In(Ga)As/GaAs quantum dot system with different areal density |
| 000A51 |
| SELF-ASSEMBLING OF INAS QUANTUM DOTS ON GAAS(001) IN MOLECULAR BEAM EPITAXY |
| 000B16 |
| Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density |
| 000B24 |
| InN layers grown by MOCVD on SrTi03 substrates |
| 000B75 |
| Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films |
| 000C08 |
| Different growth mechanisms of bimodal InAs/GaAs QDs |
| 000C25 |
| Blue-shift photoluminescence from porous InAlAs |
| 000C34 |
| Abnormal temperature dependent photoluminescence of self-assembled InAs/GaAs surface quantum dots with high areal density |
| 000C37 |
| A study of indium incorporation in In-rich InGaN grown by MOVPE |
| 000D91 |
| Observation of the surface circular photogalvanic effect in InN films |
| 001009 |
| Temperature dependence of surface quantum dots grown under frequent growth interruption |
| 001094 |
| Mn-including InAs quantum dots fabricated by Mn implantation |
| 001211 |
| Circular photogalvanic effect at inter-band excitation in InN |
| 001399 |
| Fabrication of ZnO and its enhancement of charge injection and transport in hybrid organic/inorganic light emitting devices |
| 001444 |
| Effect of inter-level relaxation and cavity length on double-state lasing performance of quantum dot lasers |
| 001484 |
| Anomalous photoluminescence of InAs quantum dots implanted by Mn ions |
| 001522 |
| Temperature dependence of surface quantum dots grown under frequent growth interruption |
| 001524 |
| Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots |
| 001539 |
| Study of nucleation positions of InAs islands on stripe-patterned GaAs (100) substrate |
| 001579 |
| Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness |
| 001598 |
| Kinetic Monte Carlo simulation of spatially ordered growth of quantum dots on patterned substrate |
| 001687 |
| Anomalous temperature dependence of photoluminescence peak energy in InAs/InAlAs/InP quantum dots |
| 001711 |
| The effect of a combined InAlAs and GaAs strained buffer layer on the structure and optical property of InAs quantum dots |
| 001713 |
| The effect of In content on high-density InxGa1-xAs quantum dots |
| 001767 |
| Origin of the blueshift in the infrared absorbance of intersubband transitions in AlxGa1-x N/GaN multiple quantum wells |
| 001782 |
| Luminescence properties of multi-layer InGaN quantum dots grown on C- and R-plane sapphire substrates |
| 001791 |
| Influence of rapid thermal annealing on InAs/InAlAs/InP quantum wires with different InAs deposited thickness |
| 001832 |
| Effect of layer thickness of immiscible alloy In0.52Al0.48As on the morphology of InAs nanostructure grown on In0.52Al0.48As/InP (001) |
| 001849 |
| Changing planar thin film growth into self-assembled island formation by adjusting experimental conditions |
| 001863 |
| A novel method for positioning of InAs islands on GaAs (110) |
| 001923 |
| Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy |
| 001973 |
| Ordering growth of InAs quantum dots on ultra-thin InGaAs strained layer |
| 001B29 |
| The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing |
| 001B45 |
| Structure and optical properties of upper In(Ga)As quantum dots on a different seed layer with a thin GaAs spacer layer |
| 001B90 |
| In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate |
| 001B91 |
| In0.25Ga0.75As films growth on the thin GaAs/AlAs buffer layer on the GaAs(0 0 1) substrate |
| 001C24 |
| Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs (001) substrate |
| 001C33 |
| Correlation of structural and optical investigation of InGaAs/InAlAs quantum cascade laser |
| 001C46 |
| Abnormal temperature dependence of photoluminescence from self-assembled InAs quantum dots covered by an InAlAs/InGaAs combination layer |
| 001D34 |
| Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer |
| 001D61 |
| Influence of strain on annealing effects of In(Ga)As quantum dots |
| 001D62 |
| Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots |
| 001D85 |
| Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots |
| 001D87 |
| Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry |
| 001D88 |
| Dependence of optical properties on the structure of multi-layer self-organized InAs quantum dots emitting near 1.3 μm |
| 001E05 |
| A novel line-order of InAs quantum dots on GaAs |
| 001E38 |
| Thermal redistribution of photocarriers between bimodal quantum dots |
| 001F06 |
| Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer |
| 001F21 |
| Optical properties of InGaAs quantum dots formed on InAlAs wetting layer |
| 001F31 |
| Influence of growth conditions on self-assembled InAs nanostructures grown on (001)InP substrate by molecular beam epitaxy |
| 001F46 |
| Growth and characterization of InGaAs/InAlAs quantum cascade lasers |
| 002048 |
| Two-dimensional ordering of self-assembled InAs quantum dots grown on (3 1 1)B InP substrate |
| 002058 |
| Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots |
| 002059 |
| Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers |
| 002064 |
| Strong temperature dependence of photoluminescence properties in visible InAlAs quantum dots |
| 002067 |
| Self-ordering of quasi-quantum wire in InAlAs/AlGaAs multilayer nanostructure and its optical anisotropy |
| 002068 |
| Self-assembled InAs quantum wires on InP(001) |
| 002070 |
| Room temperature 1.55 μm emission from InAs quantum dots grown on (001)InP substrate by molecular beam epitaxy |
| 002071 |
| Room temperature (34 °C) operation of strain-compensated quantum cascade lasers |
| 002075 |
| Pressure behaviour of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots with multi-modal distribution in size |
| 002116 |
| Effects of interdiffusion on the luminescence of InAs/GaAs quantum dots covered by InGaAs overgrowth layer |
| 002125 |
| Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots |
| 002137 |
| Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy |
| 002160 |
| Arsenic clusters on the surface of vertically aligned InAs islands on GaAs substrate by annealing |
| 002228 |
| Substrate surface atomic structure influence on the growth of InAlAs quantum dots |
| 002253 |
| Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001) : Special issue papers on quantum dots |
| 002267 |
| InAs/In0.52Al0.48As quantum wire structure with the specific layer-ordering orientation on InP(0 0 1) |
| 002274 |
| Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(100) and high index substrates by molecular beam epitaxy |
| 002341 |
| Alignment of misfit dislocations in the In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As/InP heterostructure |
| 002374 |
| Optical anisotropy of InAs submonolayer quantum wells in a (311)GaAs matrix |
| 002426 |
| Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy |
| 002441 |
| Molecular beam epitaxy growth of Iny2Al1-y2As/In0.73Ga0.27As/Iny1Al1-y1As/ InP P-HEMTs with enhancement conductivity using an intentional nonlattice-matched buffer layer |
| 002446 |
| Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix |
